Dissertations / Theses on the topic 'He+/Si'
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Cheung, Man-wai. "The death of He Xinyin, 1517-79 He Xinyin zhi si /." Click to view the E-thesis via HKUTO, 1989. http://sunzi.lib.hku.hk/hkuto/record/B3194940X.
Full textReboh, Shay. "Defect engineering in H and He implanted Si." Phd thesis, Université de Poitiers, 2008. http://tel.archives-ouvertes.fr/tel-00459734.
Full textSamuels, Carmencita Marioano. "Cultural ideology and the lanscape of Confucian China : the traditional si he yuan." Thesis, University of British Columbia, 1986. http://hdl.handle.net/2429/26604.
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Geography, Department of
Graduate
Silva, Douglas Langie da. "Formação e estabilidade térmica de nanocavidades produzidas pela implantação de He em Si." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2004. http://hdl.handle.net/10183/5477.
Full textMörschbächer, Marcio José. "Relaxação estrutural de camadas pseudomórficas de SiGe/Si(100) induzida pela implantação iônica de He ou Si e tratamento térmico." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2005. http://hdl.handle.net/10183/5783.
Full textMatos, Ludmar Guedes. "Comportamento térmico de bolhas híbridas de Ne-He produzidas por implantação iônica em Si." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2012. http://hdl.handle.net/10183/70333.
Full textIn a previous work it was observed that the formation of pressurized He bubbles in a Si substrate is able to improve the crystalline quality of a GaN/AlN structure heteroepitaxialy grown over Si. The bubbles attract the misfit dislocations generated at Si substrate and redirect them toward the substrate, reducing the dislocation density in the overgrown GaN layer. However, a bubbles system with similar properties and able to show higher thermal stability is more suitable for this grown purpose. In this work we have investigated systems containing Ne and He-Ne bubbles obtained from different implantation parameters and annealing temperatures. Ne implantation was performed at 350 and 450°C, and we also interchanged the implantation order at the He-Ne co-implanted systems. Subsequently, these samples were subjected to rapid thermal annealing from 400 to 1000°C. The samples were characterized by Rutherford Backscattering Spectrometry/Channeling (RBS/C), Elastic Recoil Detection (ERD) and Transmission Electron Microscopy (TEM). It was observed a higher residual damage level due to Ne implantation, even though it was implanted at 350 or 450°C. A higher damage level brings to a similar morphology between Ne and He-Ne systems, in which are just observed spherical bubbles with no stress field in the TEM images. When just He is implanted, in the mentioned previous work, the formed bubbles are plate like ones with the presence of stress field around them. However, in the co-implanted case when Ti (Ne) = 450ºC or when a 1000ºC is performed between implantations (Ne first implanted), the reduction of the residual damage brings to a system which is more He pure like: it occurs the formation of more pressurized hybrid bubbles and with a combined morphology between elliptical and spherical ones.
Khendriche, Arezki. "Étude du noyau ³¹ P au moyen de réactions de transfert d'un proton ³⁰Si (³He, d) ³¹P et ³⁰Si (α , t) ³¹p." Paris 11, 1987. http://www.theses.fr/1987PA112200.
Full textKhendriche, Arezki. "Etude du noyau de 31p au moyen de réactions de transfert d'un proton ³⁰Si(³He,d) ³¹p et ³⁰Si(alpha,t) ³¹p." Grenoble 2 : ANRT, 1987. http://catalogue.bnf.fr/ark:/12148/cb37606564f.
Full textSantos, Jose Henrique Rodrigues dos. "Estudo do poder de freamento eletrônico de íons de He e B canalizados em Si." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 1997. http://hdl.handle.net/10183/149850.
Full textIn this work, we have measured the electronic stopping power of He and B ions channeling along the < 100 > direction of Si crystals. The ion energies ranged between 200 keV and 4.5 Me V, in the first case, and between 500 ke V and 9 Me V, in the second one. We have used the Rutherford backscattering technique with SIMOX samples consisting of a Si single-crystal layer on top of a buried layer of 500 nm Si02 built into Si < 100 > wafer. In this exp erimental method, the channeling energy loss is obtained aft er the particles being backscattered at some marker specially used for this purpose . For both types of projectile, the curve of the a ratio between the channeling and random stopping powers has a broad maximum and decreases slowly at high energies dueto the increasing of the contribution of the Si L shell to the electronic stopping power, as indicated by Plane Wave Born Approximation (PWBA) calculations.
Azevedo, Gustavo de Medeiros. "Estudo do poder de freamento de He, Li, Eu e Bi canalizados em alvos de Si cristalino." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2000. http://hdl.handle.net/10183/10430.
Full textIn this work we have performed a systematic sudy of the energy loss of channeled ions along the h100i , h111i and h110i directions of Si single crystals. Two different, but related, topics of the problem were investigated. On the first topic we have studied the stopping powers of heavy ions (Eu and Bi) with energies ranging between 15 and 50 keV, for which the main slowing down mechanism is the nuclear stopping power. The second topic is related to the slowing down of light ions (He and Li) with energies ranging between 0.3 and 8 MeV. In this case, the projectile energy is lost mainly in electronic collisions. The study of the slowing down of channeled heavy ions was performed in an indirect way, by comparing the depth profiles of Eu and Bi ions implanted under channeling conditions with calculations with the program MARLOWE which simulates the interactions of ion beams with solid targets. We have observed for the first time in channeling implantations the Z1 effect, namely, the deformation of the periphery of the electronic clouds of the projectile and target in low energy atomic collisions. While our data for Bi implantations are very well reproduced by MARLOWE predictions the Eu profiles present long tails that go farther in the Si bulk than predicted by MARLOWE. Furthermore, we have demostrated that this behavior is explained in terms of molecular structure ab initio calculations based on the Density Fuctional Theory (DFT). Concerning the light ions, the stopping powers were measured by the Rutherford Backscattering technique with SIMOX samples that consist on a Si single crystal layer 200nm thick on the top of a 5000 nm thick SiO2 layer buried on a Sih100i single cristal. With this technique we have measured both the energy and the angular dependency of the the channeling stopping power. The theoretical analysis of the results was performed by means of computer simulations of the channeled trajectories and in calculatios of the impact parameter dependent energy loss. These comparisons allowed us to determine the relative role played by the energy loss processes under channeling conditions
Ren, Feng. "Nan Song ru jia jing zhi zhi xue de xing qi : lun Xue Jixuan he Tang Zhongyou de jing shi si xiang /." View abstract or full-text, 2005. http://library.ust.hk/cgi/db/thesis.pl?HUMA%202005%20REN.
Full textYip, Kwok-wai. "The construction of the grand canal in the Sui Dynasty : its conception and impact = Sui Dai ying jian Da Yun He de gou si yu ying xiang /." Hong Kong : University of Hong Kong, 2001. http://sunzi.lib.hku.hk/hkuto/record.jsp?B25943285.
Full textHolguín, Cafferata Carlos Alberto. "Si te he visto no me acuerdo. El ejercicio de los derechos de cancelación y oposición de datos personales sobre los buscadores de Internet (“derecho al olvido”) y sus implicancias en el Perú." Master's thesis, Pontificia Universidad Católica del Perú, 2020. http://hdl.handle.net/20.500.12404/18096.
Full textChan, Ho-yung. "A comparative study of Qian Mu and Yang Bojun's interpretations of Confucius' political thoughts with reference to Qian's Lunyu xinjie and Yang's Lunyu yizhu Qian Mu "Lun yu xin jie" he Yang Bojun "Lun yu yi zhu" dui Kongzi zheng zhi si xiang jie shi de bi jiao yan jiu /." Click to view the E-thesis via HKUTO, 2009. http://sunzi.lib.hku.hk/hkuto/record/B42925952.
Full textParpottas, Yannis. "Astrophysically important states in ¹⁸Ne and ²⁶Si studied with the (³He, n) reaction /." 2004. http://wwwlib.umi.com/dissertations/fullcit/3142050.
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