Academic literature on the topic 'He+/Si'
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Journal articles on the topic "He+/Si"
Pivac, B., B. Rakvin, R. Tonini, F. Corni, and G. Ottaviani. "EPR study of He-implanted Si." Materials Science and Engineering: B 73, no. 1-3 (April 2000): 60–63. http://dx.doi.org/10.1016/s0921-5107(99)00434-1.
Full textBuca, D., S. F. Feste, B. Holländer, S. Mantl, R. Loo, M. Caymax, R. Carius, and H. Schaefer. "Growth of strained Si on He ion implanted Si/SiGe heterostructures." Solid-State Electronics 50, no. 1 (January 2006): 32–37. http://dx.doi.org/10.1016/j.sse.2005.10.042.
Full textKilpeläinen, S., K. Kuitunen, J. Slotte, F. Tuomisto, E. Bruno, S. Mirabella, and F. Priolo. "He implantation induced nanovoids in crystalline Si." Materials Science and Engineering: B 159-160 (March 2009): 164–67. http://dx.doi.org/10.1016/j.mseb.2008.12.010.
Full textAlatalo, M., M. J. Puska, and R. M. Nieminen. "First-principles study of He in Si." Physical Review B 46, no. 19 (November 15, 1992): 12806–9. http://dx.doi.org/10.1103/physrevb.46.12806.
Full textBruno, E., S. Mirabella, E. Napolitani, F. Giannazzo, V. Raineri, and F. Priolo. "He implantation in Si for B diffusion control." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 257, no. 1-2 (April 2007): 181–85. http://dx.doi.org/10.1016/j.nimb.2007.01.034.
Full textLiu, Changlong, E. Ntsoenzok, R. Delamare, D. Alquier, G. Regula, L. Vincent, C. Filadelfo, and A. Claverie. "The evolution of cavities in Si co-implanted with Si and He ions1." Materials Science and Engineering: B 102, no. 1-3 (September 2003): 75–79. http://dx.doi.org/10.1016/s0921-5107(02)00632-3.
Full textZhang, X. D., C. L. Liu, M. K. Li, Y. J. Gao, and D. C. Zhang. "Creation of Si nanocrystals from SiO2/Si by He and H ion implantation." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 276 (April 2012): 25–29. http://dx.doi.org/10.1016/j.nimb.2012.01.025.
Full textKilpeläinen, S., K. Kuitunen, F. Tuomisto, J. Slotte, E. Bruno, S. Mirabella, and F. Priolo. "Vacancy engineering by He induced nanovoids in crystalline Si." Semiconductor Science and Technology 24, no. 1 (December 5, 2008): 015005. http://dx.doi.org/10.1088/0268-1242/24/1/015005.
Full textAzevedo, G. de M., J. R. A. Kaschny, M. Behar, P. L. Grande, Ch Klatt, and S. Kalbitzer. "Charge equilibration of He ions in the Si channel." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 161-163 (March 2000): 96–100. http://dx.doi.org/10.1016/s0168-583x(99)00677-1.
Full textda Silva, D. L., P. F. P. Fichtner, M. Behar, A. Peeva, R. Koegler, and W. Skorupa. "Implantation temperature dependence of He bubble formation in Si." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 190, no. 1-4 (May 2002): 756–60. http://dx.doi.org/10.1016/s0168-583x(01)01260-5.
Full textDissertations / Theses on the topic "He+/Si"
Cheung, Man-wai. "The death of He Xinyin, 1517-79 He Xinyin zhi si /." Click to view the E-thesis via HKUTO, 1989. http://sunzi.lib.hku.hk/hkuto/record/B3194940X.
Full textReboh, Shay. "Defect engineering in H and He implanted Si." Phd thesis, Université de Poitiers, 2008. http://tel.archives-ouvertes.fr/tel-00459734.
Full textSamuels, Carmencita Marioano. "Cultural ideology and the lanscape of Confucian China : the traditional si he yuan." Thesis, University of British Columbia, 1986. http://hdl.handle.net/2429/26604.
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Geography, Department of
Graduate
Silva, Douglas Langie da. "Formação e estabilidade térmica de nanocavidades produzidas pela implantação de He em Si." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2004. http://hdl.handle.net/10183/5477.
Full textMörschbächer, Marcio José. "Relaxação estrutural de camadas pseudomórficas de SiGe/Si(100) induzida pela implantação iônica de He ou Si e tratamento térmico." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2005. http://hdl.handle.net/10183/5783.
Full textMatos, Ludmar Guedes. "Comportamento térmico de bolhas híbridas de Ne-He produzidas por implantação iônica em Si." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2012. http://hdl.handle.net/10183/70333.
Full textIn a previous work it was observed that the formation of pressurized He bubbles in a Si substrate is able to improve the crystalline quality of a GaN/AlN structure heteroepitaxialy grown over Si. The bubbles attract the misfit dislocations generated at Si substrate and redirect them toward the substrate, reducing the dislocation density in the overgrown GaN layer. However, a bubbles system with similar properties and able to show higher thermal stability is more suitable for this grown purpose. In this work we have investigated systems containing Ne and He-Ne bubbles obtained from different implantation parameters and annealing temperatures. Ne implantation was performed at 350 and 450°C, and we also interchanged the implantation order at the He-Ne co-implanted systems. Subsequently, these samples were subjected to rapid thermal annealing from 400 to 1000°C. The samples were characterized by Rutherford Backscattering Spectrometry/Channeling (RBS/C), Elastic Recoil Detection (ERD) and Transmission Electron Microscopy (TEM). It was observed a higher residual damage level due to Ne implantation, even though it was implanted at 350 or 450°C. A higher damage level brings to a similar morphology between Ne and He-Ne systems, in which are just observed spherical bubbles with no stress field in the TEM images. When just He is implanted, in the mentioned previous work, the formed bubbles are plate like ones with the presence of stress field around them. However, in the co-implanted case when Ti (Ne) = 450ºC or when a 1000ºC is performed between implantations (Ne first implanted), the reduction of the residual damage brings to a system which is more He pure like: it occurs the formation of more pressurized hybrid bubbles and with a combined morphology between elliptical and spherical ones.
Khendriche, Arezki. "Étude du noyau ³¹ P au moyen de réactions de transfert d'un proton ³⁰Si (³He, d) ³¹P et ³⁰Si (α , t) ³¹p." Paris 11, 1987. http://www.theses.fr/1987PA112200.
Full textKhendriche, Arezki. "Etude du noyau de 31p au moyen de réactions de transfert d'un proton ³⁰Si(³He,d) ³¹p et ³⁰Si(alpha,t) ³¹p." Grenoble 2 : ANRT, 1987. http://catalogue.bnf.fr/ark:/12148/cb37606564f.
Full textSantos, Jose Henrique Rodrigues dos. "Estudo do poder de freamento eletrônico de íons de He e B canalizados em Si." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 1997. http://hdl.handle.net/10183/149850.
Full textIn this work, we have measured the electronic stopping power of He and B ions channeling along the < 100 > direction of Si crystals. The ion energies ranged between 200 keV and 4.5 Me V, in the first case, and between 500 ke V and 9 Me V, in the second one. We have used the Rutherford backscattering technique with SIMOX samples consisting of a Si single-crystal layer on top of a buried layer of 500 nm Si02 built into Si < 100 > wafer. In this exp erimental method, the channeling energy loss is obtained aft er the particles being backscattered at some marker specially used for this purpose . For both types of projectile, the curve of the a ratio between the channeling and random stopping powers has a broad maximum and decreases slowly at high energies dueto the increasing of the contribution of the Si L shell to the electronic stopping power, as indicated by Plane Wave Born Approximation (PWBA) calculations.
Azevedo, Gustavo de Medeiros. "Estudo do poder de freamento de He, Li, Eu e Bi canalizados em alvos de Si cristalino." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2000. http://hdl.handle.net/10183/10430.
Full textIn this work we have performed a systematic sudy of the energy loss of channeled ions along the h100i , h111i and h110i directions of Si single crystals. Two different, but related, topics of the problem were investigated. On the first topic we have studied the stopping powers of heavy ions (Eu and Bi) with energies ranging between 15 and 50 keV, for which the main slowing down mechanism is the nuclear stopping power. The second topic is related to the slowing down of light ions (He and Li) with energies ranging between 0.3 and 8 MeV. In this case, the projectile energy is lost mainly in electronic collisions. The study of the slowing down of channeled heavy ions was performed in an indirect way, by comparing the depth profiles of Eu and Bi ions implanted under channeling conditions with calculations with the program MARLOWE which simulates the interactions of ion beams with solid targets. We have observed for the first time in channeling implantations the Z1 effect, namely, the deformation of the periphery of the electronic clouds of the projectile and target in low energy atomic collisions. While our data for Bi implantations are very well reproduced by MARLOWE predictions the Eu profiles present long tails that go farther in the Si bulk than predicted by MARLOWE. Furthermore, we have demostrated that this behavior is explained in terms of molecular structure ab initio calculations based on the Density Fuctional Theory (DFT). Concerning the light ions, the stopping powers were measured by the Rutherford Backscattering technique with SIMOX samples that consist on a Si single crystal layer 200nm thick on the top of a 5000 nm thick SiO2 layer buried on a Sih100i single cristal. With this technique we have measured both the energy and the angular dependency of the the channeling stopping power. The theoretical analysis of the results was performed by means of computer simulations of the channeled trajectories and in calculatios of the impact parameter dependent energy loss. These comparisons allowed us to determine the relative role played by the energy loss processes under channeling conditions
Books on the topic "He+/Si"
He zhi si. Zhengzhou Shi: Huang He shui li chu ban she, 2009.
Find full textShangtian, Wei, ed. Xiao He zhi si. Zhengzhou Shi: Da xiang chu ban she, 2013.
Find full textChina (Republic : 1949- ). Li fa yuan. Guo hui tu shu guan. He si xing fei. Taibei shi: Li fa yuan guo hui tu shu guan, 2000.
Find full textT'estimo si he begut. Barcelona: Quaderns Crema, 2004.
Find full textSi Hong he zhi. Hefei: Huangshan shu she, 2011.
Find full textHong chen si he. Nanjing: Jiangsu feng huang wen yi chu ban she, 2014.
Find full textBeijing si he yuan. Beijing Shi: Zhongguo shu dian, 1999.
Find full textLiuyang he qing si. Wulumuqi Shi: Xinjiang ren min chu ban she, 1986.
Find full textRu He Ban Hao Si Ying Gong Si. Bei jing: Shi you gong ye chu ban she, 1999.
Find full textWang bu si de he. Zhengzhou Shi: Henan wen yi chu ban she, 2003.
Find full textBook chapters on the topic "He+/Si"
Mantl, S., K. Kasper, H. J. Jorke, and K. Reichelt. "Strain Measurements in Si/Si0.5Ge0.5 and W/Mo Superlattices by He Ion Channeling." In Physics, Fabrication, and Applications of Multilayered Structures, 380–81. Boston, MA: Springer US, 1988. http://dx.doi.org/10.1007/978-1-4757-0091-6_47.
Full textFoulias, S., N. Curson, M. Cowen, and W. Allison. "Thermal He Atom Scattering for the Study of Surface Systems: K on Si(001)." In Application of Particle and Laser Beams in Materials Technology, 159–65. Dordrecht: Springer Netherlands, 1995. http://dx.doi.org/10.1007/978-94-015-8459-3_10.
Full textTobin Stanley, Maureen. "Miscarriage of Justice: The Perverted Fairy Tale of Maternity and State-Sanctioned Removal of Children from Political Prisoners in Ana Cañil’s 2011 Novel Si a los tres años no he vuelto (If I Have Not Returned in Three Years)." In Palgrave Studies in Cultural Heritage and Conflict, 189–238. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-031-13392-3_6.
Full text"¡Si no he sido yo! On retortative si-clauses in conversational Spanish." In Adverbial Modification, 187–208. BRILL, 2001. http://dx.doi.org/10.1163/9789004488663_014.
Full textSantos, J. H. R. dos, P. L. Grande, H. Boudinov, M. Behar, R. Stoll, Chr Klatt, and S. Kalbitzer. "Electronic stopping power of 〈100〉 axial-channelled He ions in Si crystals." In Ion Beam Modification of Materials, 51–54. Elsevier, 1996. http://dx.doi.org/10.1016/b978-0-444-82334-2.50014-9.
Full textLe, H. C., R. W. Dreyfus, W. Marine, M. Sentis, and I. A. Movtchan. "Temperature measurements during laser ablation of Si into He, Ar and O2." In Laser Ablation, 164–69. Elsevier, 1996. http://dx.doi.org/10.1016/b978-0-444-82412-7.50033-x.
Full text"“La certidumbre de ignorar si he detallado…”: Norah Lange y la autoficción." In La impronta autoficcional, 27–40. Vervuert Verlagsgesellschaft, 2018. http://dx.doi.org/10.31819/9783954877522-003.
Full textKoh, M., K. Hara, K. Horita, B. Shigeta, T. Matsukawa, A. Kishida, T. Tanii, M. Goto, and I. Ohdomari. "Radiation effects induced by high energy He single ions at Si/SiO2 interfaces." In Control of Semiconductor Interfaces, 241–46. Elsevier, 1994. http://dx.doi.org/10.1016/b978-0-444-81889-8.50045-6.
Full textReutov, V. F., and A. S. Sokhatsky. "Ordered helium bubbles and nanocrystallites in amorphous Si induced by low-energy He ions implantation." In Microscopy of Semiconducting Materials 2003, 383–88. CRC Press, 2018. http://dx.doi.org/10.1201/9781351074636-88.
Full textHajdu, C., M. Fried, and F. Pászti. "Investigation of the relation between stress evolution and surface deformations in high dose MeV energy He implanted Si." In Ion Beam Modification of Materials, 828–31. Elsevier, 1996. http://dx.doi.org/10.1016/b978-0-444-82334-2.50160-x.
Full textConference papers on the topic "He+/Si"
Denadai, Eduardo Perez, Irene Rusakova, Jesse Carter, Michael Martin, Assel Aitkaliyeva, Lin Shao, Floyd D. McDaniel, and Barney L. Doyle. "Defect Characterization in He Implanted Si." In APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY: Twentieth International Conference. AIP, 2009. http://dx.doi.org/10.1063/1.3119983.
Full textKwon, Young Kwan, C. H. Lee, J. Y. Moon, Jake Lee, J. Y. Kim, S. Kubono, N. Iwasa, et al. "Study of astrophysically important resonant states in $^{26}$Si by the $^{28}$Si($^{4}$He,$^{6}$He)$^{26}$Si reaction." In International Symposium on Nuclear Astrophysics - Nuclei in the Cosmos - IX. Trieste, Italy: Sissa Medialab, 2010. http://dx.doi.org/10.22323/1.028.0024.
Full textBruno, E., S. Mirabella, F. Priolo, F. Giannazzo, V. Raineri, and E. Napolitani. "Effect of He Induced Nanovoid on B Implanted in Si: The Microscopic Mechanism." In 2007 15th International Conference on Advanced Thermal Processing of Semiconductors. IEEE, 2007. http://dx.doi.org/10.1109/rtp.2007.4383827.
Full textPark, Chang, Hyung Yun, Tae Kim, Hyong Rhee, Chee Shin, Sangin Kima, and Chang-koo Kim. "Etching of poly-Si with atomic scale accuracy in inductively coupled Ar and He plasmas." In 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings. IEEE, 2006. http://dx.doi.org/10.1109/icsict.2006.306312.
Full textStambulchik, E., I. Almiev, and Y. Maron. "Spectral line broadening of H- and He- like Si IONs in hot and dense plasmas." In The 33rd IEEE International Conference on Plasma Science, 2006. ICOPS 2006. IEEE Conference Record - Abstracts. IEEE, 2006. http://dx.doi.org/10.1109/plasma.2006.1707128.
Full textTuttle, William, Larry Viehland, Timothy Wright, and Rebecca Thorington. "THEORETICAL STUDY OF GROUP 14 M+(2PJ)-RG COMPLEXES (M+ = C+, Si+; RG = He - Ar)." In 72nd International Symposium on Molecular Spectroscopy. Urbana, Illinois: University of Illinois at Urbana-Champaign, 2017. http://dx.doi.org/10.15278/isms.2017.rh02.
Full textGavriljuk, Valentin, Bela Shanina, Vladyslav Shyvanyuk, and Sergey Teus. "A Concept for Development of Hydrogen-Resistant Austenitic Steels." In ASME 2013 Pressure Vessels and Piping Conference. American Society of Mechanical Engineers, 2013. http://dx.doi.org/10.1115/pvp2013-97011.
Full textLomov, Andrey A., Kirill D. Shcherbachev, Yury M. Chesnokov, Dmitrii A. Kiselev, and Andrew V. Miakonkikh. "Evolution of structural properties of Si(001) subsurface layer containing He bubbles by low temperature annealing." In The International Conference on Micro- and Nano-Electronics 2016, edited by Vladimir F. Lukichev and Konstantin V. Rudenko. SPIE, 2016. http://dx.doi.org/10.1117/12.2266944.
Full textOkulich, Evgeniya, Victor Okulich, and David Tetelbaum. "ESTIMATION OF THE DOSE OF SILICON AMORPHIZATION IN A WIDE RANGE OF ION IMPLANTATION PARAMETERS WITH LIGHT IONS." In International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis. LLC MAKS Press, 2020. http://dx.doi.org/10.29003/m1579.silicon-2020/133-136.
Full textChu, Lizhi, Yang Zhou, Changyu Yan, Deqi Wu, Zheng Yan, Yunlong Zheng, and Yinglong Wang. "The comparison of growing process of nanocrystalline Si films deposited by pulsed laser ablation in He, Ne, and Ar." In SPIE Proceedings, edited by Wei Lu and Jeff Young. SPIE, 2006. http://dx.doi.org/10.1117/12.667693.
Full textReports on the topic "He+/Si"
Follstaedt, D. M., S. M. Myers, G. A. Petersen, and J. W. Medernach. Cavity formation and impurity gettering in He-implanted Si. Office of Scientific and Technical Information (OSTI), December 1994. http://dx.doi.org/10.2172/28380.
Full textD., Murdiyarso, and Kauffman J.B. Giai quyet van de thích ung và giam nhe tác dong cua bien doi khí hau o các he sinh thái dam lay nhiet doi In-dô-nê-si-a. Center for International Forestry Research (CIFOR), 2012. http://dx.doi.org/10.17528/cifor/003735.
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