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Books on the topic 'HBTD'

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Author: Grafiati

Published: 27 July 2024

Last updated: 28 July 2024

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1

Jalali, B. InP HBTs: Growth, processing, and applications. Edited by Pearton S. J. Boston: Artech House, 1995.

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2

Parikas, Dodo. HBT speglat i litteraturen. Lund: BTJ förlag, 2009.

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3

Russell, Ian Adrian David. Electro-thermal modelling of AlGaAs/GaAs HBTs. Birmingham: University of Birmingham, 1995.

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4

Fazal, Ali, and Gupta Aditya Kumar 1952-, eds. HEMTs and HBTs: Devices, fabrication, and circuits. Boston: Artech House, 1991.

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5

1962-, Norrhem Svante, ed. Undantagsmänniskor: En svensk HBT-historia. Stockholm: Norstedts Akademiska Förlag, 2008.

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6

Hedvig, Nathorst-Böös, and Jarl-Åberg Cecilia, eds. HBT & heder: En intervjustudie om unga HBT-personer som lever i familjer med hedersnormer. Stockholm]: ALMAeuropa, 2011.

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7

D, Cressler John, ed. Fabrication of SiGe HBT BiCMOS technology. Boca Raton, FL: CRC Press, 2008.

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8

Angelini, Sarah. High-Speed Videography on HBT-EP. [New York, N.Y.?]: [publisher not identified], 2014.

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9

Ian, Stewart. Transport Barrier Formation on HBT-EP. [New York, N.Y.?]: [publisher not identified], 2021.

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10

Anholt, Robert. Electrical and thermal characterization of MESFETs, HEMTs, and HBTs. Boston: Artech House, 1995.

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11

Haro, Fernando Ampudia de. O processo civilizacional da tourada: Guerreiros, cortesãos, profissionais... e bárbaros? Lisbon: Imprensa de História Contemporânea, 2020.

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12

Sola, F. I. Suarez. Switched capacitor filter implemented in HBT/FET technology. Manchester: UMIST, 1997.

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13

Adojutelegan, Adewole O. Cointegration of GaAs/AIGaAs HBTs and GaAs MESFETs on MBE grown layers. Manchester: UMIST, 1997.

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14

Huber, Alex. Noise characterization and modeling of InP/InGaAs HBTs for RF circuit design. Konstanz: Hartung-Gorre, 2000.

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15

Norton, Mark E. Nonlinear modelling of GaAs HBTs applied to spectral regrowth analysis of power amplifiers. Dublin: University College Dublin, 1997.

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16

Sun, Yabin. Research on the Radiation Effects and Compact Model of SiGe HBT. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-4612-4.

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17

McAlister, S. An investigation into PA HBT unit cell layout utilizing high efficiency conduction modes. [s.l: The Author], 2004.

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18

Ulnicane, Inga. Chapter 11 Governance of Dual Use Research in the EU: The Case of Neuroscience. Abingdon: Taylor & Francis, 2020.

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19

Kumar, Awasthi Shailendra, ed. Energy conservation in the chemical and allied industries: Proceedings of national seminar held at HBTI, Kanpur, India, 22-23 Nov., 1986. New Delhi: South Asian Publishers, 1989.

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20

Vrolijk, H. W. Samenwerking verplicht: Veranderingen in het verplichtende karakter van samenwerking tussen 1980 en 1994 : verslag van een onderzoek in opdracht van het Hoofdbedrijfschap Detailhandel (HBD). Den Haag: Hoofdbedrijfschap Detailhandel, 1998.

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21

Vrolijk, H. W. Samenwerking verplicht: Veranderingen in het verplichtende karakter van samenwerking tussen 1980 en 1994 : verslag van een onderzoek in opdracht van het Hoofdbedrijfschap Detailhandel (HBD). Den Haag: Hoofdbedrijfschap Detailhandel, 1998.

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22

Bitter, Martin. InP/InGaAs pin-photodiode arrays for parallel optical interconnects and monolithic InP/InGaAs pin/HBT optical receivers for 10-Gb/s and 40-Gb/s. Konstanz: Hartung-Gorre, 2001.

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23

Pantun. Peranan dan fungsi program HPH bina desa (HBD) hutan dalam rangka pembangunan wilayah pedesaan: Studi kasus wilayah Kecamatan Tungkal Ulu, Kabupaten Tanjung Jabung, Propinsi Jambi. [Bogor]: Program Pascasarjana, Institut Pertanian Bogor, 1994.

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24

United States. National Aeronautics and Space Administration., ed. Fabrication and characterization of a long wavelength InP HBT-based optical receiver: A final report to the National Aeronautics and Space Administration, NASA grant NAG3-1757, project period--June 1, 1996 - December 31, 1996. [Washington, DC: National Aeronautics and Space Administration, 1997.

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25

Calcara, Antonio. Emerging Security Technologies and EU Governance: Actors, Practices and Processes. Abingdon: Taylor & Francis, 2020.

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26

Gay, lesbian, bisexual, and transgender aging: Challenges in research, practice, and policy. Baltimore: Johns Hopkins University Press, 2011.

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27

Thompson, Guy. Hbt. Independently Published, 2017.

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28

Ravenshear, Petronella. HBD Cookbook. HarperCollins Publishers Limited, 2023.

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29

Holder, Ryan. Hbd Grandpa. Lulu Press, Inc., 2023.

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30

Tso, Bendi, and Marnyi Gyatso. Shépa: The Tibetan Oral Tradition in Choné. Open Book Publishers, 2023.

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31

Rudolph, Matthias. Introduction to Modeling HBTs. Artech House Publishers, 2006.

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32

Pearton, S. J. InP HBTs: Growth, Processing, and Applications. Artech House Publishers, 1994.

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33

Halstead, C. M. Hbd: Here Be Dragons. Halstead, C. M., 2021.

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34

Halstead, C. M. Hbd: Here Be Dragons. Halstead, C. M., 2021.

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35

Folktales of Mayotte, an African Island. Open Book Publishers, 2023.

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36

Studies in the Masoretic Tradition of the Hebrew Bible. Open Book Publishers, 2022.

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37

Cressler, John D. Fabrication of SiGe HBT BiCMOS Technology. CRC Press, 2007. http://dx.doi.org/10.1201/9781315218892.

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38

Cressler, John D. Fabrication of Sige HBT BiCMOS Technology. Taylor & Francis Group, 2018.

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39

Cressler, John D. Fabrication of Sige HBT BiCMOS Technology. Taylor & Francis Group, 2018.

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40

Cressler, John D. Fabrication of Sige HBT BiCMOS Technology. Taylor & Francis Group, 2018.

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41

Cressler, John D. Fabrication of Sige HBT BICMOS Technology. Taylor & Francis Group, 2007.

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42

Cressler, John D. Fabrication of Sige HBT BiCMOS Technology. Taylor & Francis Group, 2018.

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43

Fabrication of SiGe HBT BiCMOS Technology. CRC, 2007.

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44

Lüttmann, Holger. Untersuchungen zur Expression der [beta]-defensine HBD-1 und HBD-2 in Plattenepithelkarzinomen des Oropharynx und Larynx. Kiel, 2007.

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45

Paul, Douglas J. Si/SiGe heterostructures in nanoelectronics. Edited by A. V. Narlikar and Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533060.013.5.

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Abstract:

This article describes the applications of Si/SiGe heterostructures in nanoelectronics. Silicon-germanium is now a mature field with heterojunction bipolar transistors (HBTs) and complementary metal oxide semiconductors (CMOS) products in the market place. In the research field there are many areas where Si/SiGe heterostructures are being used to bandgap engineer nanoelectronic devices resulting in significant improvements in device performance. A number of these areas have good potential for eventually reaching production, while thereare also many that allow fundamental research on the physics of materials anddevices. This article begins with an overview of the growth of silicon-germanium alloys, followed by a discussion of the effect of strain on the band structure and properties of Si/SiGe devices. It then considers two mainstream nanoelectronic applications of Si/SiGe heterostructures, namely HBTs and CMOS. It also looks at resonant tunnelling diodes and SiGe quantum cascade emitters.

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46

Liu, William. Fundamentals of III-V Devices: HBTs, MESFETs, and HFETs/HEMTs. Wiley & Sons, Incorporated, John, 2008.

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47

Fundamentals of III-V devices: HBTs, MESFETs, and HFETs/HEMTs. New York: Wiley, 1999.

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48

Journals, Beng. Hbd Notebook: Birthday Gift Notebook Journal - - 120 Pages -. Independently Published, 2020.

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49

A Study on Characteristics of HBT Device Parameters. LAP LAMBERT Academic Publishing, 2013.

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50

Namo, Igor-Melissa, and Therese-Åsa Karl Lynx Namo. Tina och Vinterns värld: En värmande HBTQ+ saga för hela familjen. Books on Demand, 2022.

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