Relevant bibliographies by topics / Growth of single crystals

Academic literature on the topic 'Growth of single crystals'

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Published: 25 May 2024

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Journal articles on the topic "Growth of single crystals"

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Tian, Ruifeng, Mingyan Pan, Lu Zhang, and Hongji Qi. "Crystal growth and spectral properties of (Yb0.15Lu0.85xY0.85-0.85x)3Al5O12 single crystals." Chinese Optics Letters 20, no. 12 (2022): 121601. http://dx.doi.org/10.3788/col202220.121601.

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Feigelson, Robert S. "Growth of Single Crystal Fibers." MRS Bulletin 13, no. 10 (October 1988): 47–55. http://dx.doi.org/10.1557/s0883769400064198.

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Single-crystal fibers represent perhaps one of the most underexplored areas of material science. Despite some early interest and excitement 30 years ago, the lack of immediate applications led to a decline in research activity, and until recently, little was known about their growth behavior and properties. During the past few years single-crystal fiber research has been revived and preliminary results have stimulated considerable interest in the scientific community.At present, the most extensive and broadly based single-crystal fiber program is at Stanford University, where the focus has been on studying fibers for optical applications. This program emerged from a desire to combine the light-guiding properties of fiber geometries with the unique physical properties of crystalline materials, as was done during the last decade for glass fiber applications. Such materials could lead to a range of novel devices with higher efficiencies than possible in bulk crystals. But single-crystal fiber growth technology may have an even broader applicability. While single-crystal fibers of semiconductor, superconductor, and high strength materials could play an important role in future device applications, an important current use for the single-crystal fiber growth technology is in preparing single crystals of a wide variety of materials for property evaluation. Fiber crystals may have much higher crystalline perfection than bulk crystals of the same composition, making them useful for studying the intrinsic properties of a material and for improving device performance. Other areas of interest which have been identified include metastable phase formation and the growth of oriented ferroic domain and multiphase structures.
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Fisher, John G., Su-Hyeon Sim, Trung Thành Ðoàn, Eugenie Uwiragiye, Jungwi Mok, and Junseong Lee. "Comparison of (K0.5Na0.5)NbO3 Single Crystals Grown by Seed-Free and Seeded Solid-State Single Crystal Growth." Materials 16, no. 10 (May 10, 2023): 3638. http://dx.doi.org/10.3390/ma16103638.

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(K0.5Na0.5)NbO3-based piezoelectric ceramics are of interest as a lead-free replacement for Pb(Zr,Ti)O3. In recent years, single crystals of (K0.5Na0.5)NbO3 with improved properties have been grown by the seed-free solid-state crystal growth method, in which the base composition is doped with a specific amount of donor dopant, inducing a few grains to grow abnormally large and form single crystals. Our laboratory experienced difficulty obtaining repeatable single crystal growth using this method. To try and overcome this problem, single crystals of 0.985(K0.5Na0.5)NbO3-0.015Ba1.05Nb0.77O3 and 0.985(K0.5Na0.5)NbO3-0.015Ba(Cu0.13Nb0.66)O3 were grown both by seed-free solid-state crystal growth and by seeded solid-state crystal growth using [001] and [110]-oriented KTaO3 seed crystals. X-ray diffraction was carried out on the bulk samples to confirm that single-crystal growth had taken place. Scanning electron microscopy was used to study sample microstructure. Chemical analysis was carried out using electron-probe microanalysis. The single crystal growth behaviour is explained using the mixed control mechanism of grain growth. Single crystals of (K0.5Na0.5)NbO3 could be grown by both seed-free and seeded solid-state crystal growth. Use of Ba(Cu0.13Nb0.66)O3 allowed a significant reduction in porosity in the single crystals. For both compositions, single crystal growth on [001]-oriented KTaO3 seed crystals was more extensive than previously reported in the literature. Large (~8 mm) and relatively dense (<8% porosity) single crystals of 0.985(K0.5Na0.5)NbO3-0.015Ba(Cu0.13Nb0.66)O3 can be grown using a [001]-oriented KTaO3 seed crystal. However, the problem of repeatable single crystal growth remains.
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Aisling, Lynch, and Rasmuson Åke. "Crystal Growth of Single Salicylamide Crystals." Crystal Growth & Design 19, no. 12 (October 21, 2019): 7230–39. http://dx.doi.org/10.1021/acs.cgd.9b01101.

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Zhou, Wuzong. "Reversed Crystal Growth." Crystals 9, no. 1 (December 22, 2018): 7. http://dx.doi.org/10.3390/cryst9010007.

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In the last decade, a reversed growth route has been found in many crystal growth processes. In these systems, a single crystal does not develop from a single nucleus. The precursor molecules/ions or nanocrystallites aggregate into some large amorphous or polycrystalline particles. Multiple-nucleation on the surface of the amorphous particles or surface re-crystallization of the polycrystalline particles then takes place, forming a single crystal shell with a regular morphology. Finally, the crystallization extends from the surface to the core to form single crystals. This non-classical crystal growth route often results in some special morphologies, such as core-shell structures, hollow single crystals, sandwich structures, etc. This article gives a brief review of the research into reversed crystal growth and demonstrates that investigation of detailed mechanisms of crystal growth enables us to better understand the formation of many novel morphologies of the crystals. Some unsolved problems are also discussed.
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Golubovic, Aleksandar, Slobodanka Nikolic, Stevan Djuric, and Andreja Valcic. "The growth of sapphire single crystals." Journal of the Serbian Chemical Society 66, no. 6 (2001): 411–18. http://dx.doi.org/10.2298/jsc0106411g.

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Sapphire (Al2O3) single crystals were grown by the Czochralski technique both in air and argon atmospheres. The conditions for growing sapphire single crystals were calculated by using a combination of Reynolds and Grash of numbers. Acritical crystal diameter dc = 20 mm and the critical rate of rotation c = 20 rpm were calculated from the hydrodynamics of the melt. The value of the rate of crystal growth was experimentally found to be 3.5 mm/h. According to our previous experiments, it was confirmed that three hours exposures to conc. H3PO4 at 593 K was suitable for chemical polishing. Also, three hours exposure to conc.H3PO4 at 523Kwas found to be a suitable etching solution. The lattice parameters a = 0.47573 nm and c = 1.29893 nm were determined by X-ray powder diffraction. The obtained results are discussed and compared with published data.
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LEE, Ho-Yong. "“Generation III” Piezoelectric Single Crystals Developed by Solid-State Single Crystal Growth Method." Ceramist 24, no. 3 (September 30, 2021): 273–85. http://dx.doi.org/10.31613/ceramist.2021.24.3.07.

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Crystallographically engineered Relaxor-PT single crystals, specifically PMN-PT (Generation I) and PIN-PMN-PT/PMN-PZT (Generation II), offer much higher piezoelectric and electromechanical coupling coefficients (d33>1,500 pC/N, k33>0.9), when compared to polycrystalline PZT-5H ceramics (d33>600 pC/N, k33>0.75). Recently Ceracomp Co., Ltd. (www.ceracomp.com) has developed the solid-state single crystal growth (SSCG) technique and successfully fabricated Gen III PMN-PZT single crystals modified with acceptors or donors. The piezoelectric constants (d33) of (001) Gen III PMN-PZT single crystals were measured to be higher than 4,000 pC/N and thus about two times higher than those of PMN-PT/PZN-PT (Gen I) and PIN-PMN-PT/PMN-PZT (Gen II) single crystals. The Gen III PMN-PZT single crystals have been firstly applied to single crystal-epoxy composites, ultrasonic transducers, piezoelectric sensors, and piezoelectric actuators. In this paper we introduce the development of Gen III PMN-PZT single crystals, piezoelectric composites and multilayer single crystal actuators.
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Golubovic, Aleksandar, Slobodanka Nikolic, Rados Gajic, Stevan Djuric, and Andreja Valcic. "The growth of Nd: YAG single crystals." Journal of the Serbian Chemical Society 67, no. 4 (2002): 291–300. http://dx.doi.org/10.2298/jsc0204291g.

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Y3Al5O12 doped with 0.8%wt.Nd (Nd:YAG) single crystals were grown by the Czochralski technique under an argon atmosphere. The conditions for growing the Nd:YAG single crystals were calculated by using a combination of Reynolds and Grashof numbers. The critical crystal diameter and the critical rate of rotation were calculated from the hydrodynamics of the melt. The crystal diameter Dc=1.5 cm remained constant during the crystal growth while the critical rate of rotation changed from ?c=38 rpm after necking to ?c=13 rpm at the end of the crystal. The value of the rate of crystal growth was experimentally found to be 0.8?1.0 mm/h. According to our previous experiments, it was confirmed that 20 min exposure to conc. H3PO4 at 603 K was suitable for chemical polishing. Also, one-hour exposure to conc. H3PO4 at 493 K was found to be suitable for etching. The lattice parameter a=1.201 (1) nm was determined by X-ray powder diffraction. The obtained results are discussed and compared with published data.
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Bobowski, Jake S., Naoki Kikugawa, Takuto Miyoshi, Haruki Suwa, Han-shu Xu, Shingo Yonezawa, Dmitry A. Sokolov, Andrew P. Mackenzie, and Yoshiteru Maeno. "Improved Single-Crystal Growth of Sr2RuO4." Condensed Matter 4, no. 1 (January 7, 2019): 6. http://dx.doi.org/10.3390/condmat4010006.

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High-quality single crystals are essentially needed for the investigation of the novel bulk properties of unconventional superconductors. The availability of such crystals grown by the floating-zone method has helped to unveil the unconventional superconductivity of the layered perovskite Sr2RuO4, which is considered as a strong candidate of a topological spin-triplet superconductor. Yet, recent progress of investigations urges further efforts to obtain ultimately high-quality crystalline samples. In this paper, we focus on the method of preparation of feed rods for the floating-zone melting and report on the improvements of the crystal growth. We present details of the improved methods used to obtain crystals with superconducting transition temperatures Tc that are consistently as high as 1.4 K, as well as the properties of these crystals.
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Pandurangan, Koteeswari, and Sagadevan Suresh. "Synthesis, Growth, and Characterization of Bisglycine Hydrobromide Single Crystal." Journal of Materials 2014 (June 29, 2014): 1–7. http://dx.doi.org/10.1155/2014/362678.

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Single crystals of BGHB were grown by slow evaporation technique. The unit cell dimensions and space group of the grown crystals were confirmed by single crystal X-ray diffraction. The modes of vibration of the molecules and the presence of functional groups were identified using FTIR technique. The microhardness study shows that the Vickers hardness number of the crystal increases with the increase in applied load. The optical properties of the crystals were determined using UV-Visible spectroscopy. The thermal properties of the grown crystal were also determined. The refractive index was determined as 1.396 using Brewster’s angle method. The emission of green light on passing the Nd: YAG laser light confirmed the second harmonic generation property of the crystals and the SHG efficiency of the crystals was found to be higher than that of KDP. The dielectric constant and dielectric loss measurements were carried out for different temperatures and frequencies. The ac conductivity study of the crystals was also discussed. The photoconductivity studies confirm that the grown crystal has negative photoconductivity nature. The etching studies were carried out to study the formation of etch pits.
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Dissertations / Theses on the topic "Growth of single crystals"

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Deniz, Derya. "Growth And Characterization Of Inse Single Crystals." Master's thesis, METU, 2004. http://etd.lib.metu.edu.tr/upload/12605213/index.pdf.

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In this study, InSe single crystals were grown from the melt using conventional Bridgman-Stockbarger system. The grown crystals were implanted by N-ions to investigate the doping effect. the stoichiometry and the structural features were examined by scanning electron microscope and X-ray diffraction method, respectively. We have observed that the ingot was stoichiometric and the structure was hexagonal. Temperature dependent conductivity and Hall effect measurements were carried out to investigate the electrical properties of as-grown, as-implanted and annealed samples within the temperature range of 80-400 K. To investigate the annealing effect on both the absorption and photoluminescence (PL) spectra, absorption and PL measurements were performed at room temperature. N-implantation reduced the resistivity order from 103 to 101 (&
#937
-cm). We have used temperature dependent conductivity and Hall effect measurements to analyze the dominant scattering mechanisms. Hall measurements showed that all the samples had n-type conduction. Absorption measurements showed that InSe had direct band gap. It was observed that annealing had almost no effect an both room temperature absorption and PL spectra of the samples.
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Constantinidis, G. "Growth and characterisation of single CuInSe2̲ crystals." Thesis, University of Salford, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.381646.

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Brown, Stephen James. "The Czochrlaski growth and characterisation of single crystals of lead molybdate." Thesis, University of Cambridge, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.364392.

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Möckel, Robert. "Growth and properties of GdCa4O(BO3)3 single crystals." Doctoral thesis, Technische Universitaet Bergakademie Freiberg Universitaetsbibliothek "Georgius Agricola", 2012. http://nbn-resolving.de/urn:nbn:de:bsz:105-qucosa-90095.

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In der vorliegenden Arbeit wird die Einkristallzüchtung nach dem Czochralskiverfahren von GdCa4O(BO3)3 (GdCOB) beschrieben. Aus insgesamt 18 Zuchtversuchen, bei denen auch die Ziehgeschwindigkeit zwischen 1 und 3mm/h variiert wurde, wurden erfolgreich nahezu perfekte Einkristalle gewonnen. In einigen Kristallen traten jedoch auch Risse oder Einschlüsse auf. Diese enthielten neben Iridium vom Tiegelmaterial auch andere Phasen des Gd2O3–B2O3–CaO-Systems, sowie P und Yb, deren Herkunft unklar ist. Als Hauptziehrichtung wurde die kristallographische b-Achse gewählt, ergänzt durch einige Experimente in der c-Richtung. In den drei kristallographischen Hauptrichtungen wurden die thermischen Ausdehnungskoeffizienten von GdCOB bestimmt. Diese können in zwei nahezu lineare Bereiche unterteilt werden: von Zimmertemperatur bis etwa 850° C und von 850 bis 1200° C, wobei die Koeffizienten im Hochtemperaturbereich deutlich höher sind (unter 850° C: alpha_a=11.1, alpha_b=8.6, alpha_c=13.3 10^-6/K, oberhalb 850° C: alpha_a=14.1, alpha_b=11.7, alpha_c=17.8 10^-6/K). Daraus ergibt sich, dass ein Phasenübergang höherer Ordnung vorliegen muss. Als mögliche Ursache wurde mittels HT-Raman Spektroskopie ein Ordnungs-Unordnungs-Übergang identifiziert, während dessen die BO3-Gruppen in der Struktur leicht rotieren. Weitere Untersuchungen mittels thermodynamischer Methoden führten zu schwachen, aber eindeutigen Signalen, die diesem Effekt ebenfalls zuzuordnen sind. Obwohl das Material ein vielversprechender Kandidat für piezoelektrische Anwendungen im Hochtemperaturbereich ist, wurde dieser Effekt bisher unzureichend beschrieben. Dieses Verhalten, kombiniert mit den anisotropen thermischen Ausdehnungskoeffizienten, könnte eine der Ursachen für das Vorkommen von Rissen in den Kristallen während der Synthese darstellen. Spektroskopische Untersuchungen ergaben einen großen Transparenzbereich von 340 bis 2500nm (29 400–4000 cm^-1), was für optische Anwendungen von großer Bedeutung ist
In a series of 18 growth experiments, GdCa4O(BO3)3 (GdCOB) single crystals were successfully grown by the Czochralski method. They have a well-ordered structure, as revealed by single crystal structure analysis. Although the main growth direction was along the crystallographic b-axis, some experiments were conducted using the cdirection. Pulling velocities were varied between 1 and 3mm/h. Except for a few crystals with cracks or elongated "silk-like" inclusions consisting of multiphase impurities, most of the obtained crystals are of good quality. Those inclusions contain iridium, deriving from the crucible, P and Yb with unclear source, and other phases from the system Gd2O3–B2O3–CaO. Thermal expansion coefficients of GdCOB were determined in the directions of the crystallographic axes and found to be approximately linear in two temperature ranges: from 25° C to around 850° C, and from 850 to 1200° C, with the latter range showing significantly higher coefficients (below 850° C: alpha_a=11.1, alpha_b=8.6, alpha_c=13.3 10^-6/K, and above 850° C: alpha_a=14.1, alpha_b=11.7, alpha_c=17.8 x10^-6/K). This sudden increase of thermal expansion coefficients indicates a phase transition of higher order. An order-disorder transition in form of the rotation of BO3-triangles in the structure was made tentatively responsible for this transition, as revealed by HT-Raman spectroscopy. This transition was also detected by DSC-methods but appeared to result in very weak effects. Although the material is thought to represent a promising candidate for high temperature piezoelectric applications (noncentrosymmetric space group Cm), this effect of change in specification has not been described and it is unknown whether it has influence on the piezoelectric properties. Furthermore, this characteristic behaviour in combination with anisotropic coefficients may be the reason for the development of cracks during cooling of crystals, making the growth difficult. Spectroscopic investigation revealed a wide transparency range from 340 to 2500nm (29 400–4000 cm^-1) of GdCOB, which is a very important property for optical applications
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Burnett, Timothy Laurence. "Growth and charaterisation of bismuth ferrite lead titanate single crystals." Thesis, University of Leeds, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.487709.

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Bismuth ferrite lead titanate (BFPT) shows potential in high temperature piezoelectric and ferroelectric applications as well in the emerging field of multiferroic research. Single crystals of (BFPT) have been grown for the first time using the flux growth method.
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Stoica, Laura Andreea. "Relaxor-PbTiO3 single crystals and polycrystals : processing, growth and characterisation." Thesis, University of Leeds, 2016. http://etheses.whiterose.ac.uk/16259/.

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Acoustic transducers operate using polycrystalline lead zirconate titanate (PZT) since the 1950s’. Recently, relaxor-lead titanate (relaxor-PT) single crystals have been developed and exhibit up to 650% higher piezoelectric charge coefficient and up to 50% higher electromechanical coupling factor, compared with PZT. Transducers built with relaxor-PT crystals show increased bandwidth, lower power consumption and increased sensitivity. Despite the significant advantages over PZT, a growth method for relaxor-PT single crystals that is both economical and able to produce homogeneous, highly dense crystals is yet to be found. Furthermore, one of the most important relaxor-PT solid solution is Mn modified Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3- PbTiO3 due to its thermal stability and low electrical and mechanical losses compared with other relaxor-PT solid solutions. However, the behaviour of Mn in this compound is not fully understood and control of properties, such as the mechanical quality factor, is difficult. The aim of this study was to compare Bridgman and Solid State techniques for growth of single crystalline Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3. Subsequent to this, several Mn modified compositions were designed and investigated to determine the mechanisms by which mechanical and electrical losses are lowered upon Mn incorporation. Bridgman experiments have shown that a 20 mm ø x 60 mm length and highly dense single crystal can be obtained, with (011) the natural growth direction. Seeded Bridgman was also investigated as a method of controlling the orientation of the grown crystal, but was proven challenging due to nucleation of several crystallites. Solid State experiments, which involve attaching a single crystal seed to a polycrystalline matrix and promoting boundary migration of the seed into the matrix, showed that crystal growth is encouraged when a Pb-based interlayer exists in between the seed and matrix. An epitaxially deposited, uniform thin film as interlayer was found particularly beneficial. More research is needed to determine conditions for growth of a single crystal of useful size by Solid State. Analysis of several relaxorPT compositions modified with the same amount of Mn revealed that alterations of the relaxor-PT formulation affects behaviour of the multi-valent Mn which in turn in- fluences electromechanical properties. These findings are of use to the industrial and scientific communities. Crystal growth results indicate Bridgman as suitable method if growth of crystals is desired in a short time frame, whilst Solid State results provide the basis of a new approach for growing relaxor-PT crystals. The study of Mn modified compositions provides new insights into the role of Mn substitution for manipulating the electrical and mechanical properties of complex, relaxor-PT solid solutions.
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Begum, Salma. "Measurement of Ionic Concentration of Nematic Liquid Crystals and Single Crystal Growth of Organic Semiconductors." Kent State University / OhioLINK, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=kent1543277105262258.

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Bacon, Neil J. "Laboratory studies of the growth, sublimation, and light-scattering properties of single levitated ice particles /." Thesis, Connect to this title online; UW restricted, 2001. http://hdl.handle.net/1773/9735.

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Glacki, Alexander. "VGF growth of 4” GaAs single crystals with traveling magnetic fields." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät, 2014. http://dx.doi.org/10.18452/17028.

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Im Rahmen der vorliegenden Arbeit wurden Si-dotierte und undotierte 4” VGF-GaAs Einkristalle unter dem Einfluss von Wandermagnetfeldern (TMF) gezüchtet. Die für den Prozess benötigte Wärme und das Wandermagnetfeld wurden simultan mithilfe der kombinierten Regelung von Gleich- und Wechselströmen in einem KRISTMAG Heizer-Magnet-Modul (HMM) erzeugt. Alle Züchtungsexperimente wurden in einer kommerziellen VGF-Anlage mit eingebautem Eintiegel-HMM und in einer neu entwickelten VGF-Anlage mit Multitiegel-HMM durchgeführt. Der Einfluss der durch die Lorentzkräfte angetriebenen Schmelze auf die Form der fest-flüssig Phasengrenze wurde innerhalb einer TMF-Parameterstudie analysiert. Im Vergleich mit Referenzkristallen, welche ohne TMF gezüchtet wurden, zeigte sich, dass die Durchbiegung der Phasengrenze durch die Anwendung eines geeigneten Doppelfrequenz-TMF um etwa 30% verringert und der Kontaktwinkel am Tiegel um etwa 10% vergrößert werden kann. Zudem wurden Synergieeffekte von TMF-Anwendung und den Ansätzen zur Prozessintensivierung - Scale-Up, Speed-Up und Numbering-Up - für die Verbesserung der Prozesseffizienz erfolgreichnachgewiesen. Es wurden gleichzeitig zwei 4” VGF-GaAs:Si Einkristalle unter dem Einfluss eines TMF in einer Multitiegel-Anlage gezüchtet. In Kristallen, welche ohne oder mit zu starkem TMF gezüchtet wurden, waren Wachstumsstreifen sichtbar. Wurde die magnetische Flussdichte des TMF an den Kristallisationsverlauf angepasst, konnten nahezu keine Mikroinhomogenitäten detektiert werden. Die Länge der Kristallfacetten stabilisierte sich durch den Einsatz der Wandermagnetfelder. Zusätzlich konnten die Versetzungsdichten innerhalb der Kristalle durch Optimierung des thermischen Aufbaus und der Phasengrenzform signifikant reduziert werden. Mithilfe eines dem Züchtungsverlaufes angepassten Doppelfrequenz-TMF sowie der Nutzung eines BN-Suszeptors, wurde eine durchschnittliche EPD von 100 cm-2 in einem GaAs:Si Kristall erzielt.
Within the framework of this thesis Si-doped and undoped 4” VGF-GaAs single crystals were grown under the influence of traveling magnetic fields (TMF). A KRISTMAG heater-magnet module (HMM) was used for the efficient simultaneous generation of heat and TMF during the process through a combination of DC and AC control. Growth experiments were carried out in a commercial VGF growth setup equipped with a single-crucible HMM and a newly designed VGF setup with a multi-crucible HMM. The impact of the Lorentz force driven melt flow on the shape of the solid-liquid interface was analyzed in a TMF parameter study on frequency, phase shift, and current. With the application of suitable double-frequency TMF during growth, the interface deflection was reduced by about 30% and crucible contact angles increased within the order of 10%, compared to reference crystals grown without TMF. Synergy effects of TMF application on process intensification approaches scale-up, speed-up, and numbering-up were successfully shown. Two 4” VGF-GaAs:Si single crystals were simultaneously grown under the influence of a TMF in the multi-crucible HMM. With TMF application changing structural and electronic properties as well as micro- and macrosegregation were investigated on Si-doped VGF-GaAs single crystals. Striations were observed in crystals grown without or too strong TMF. Almost no micro-inhomogeneities were detected when the magnetic flux densities of the TMF were matched to the progression of solidification. Facets lengths in the crystal cone were found to be more stable with applied TMF. Further, the combined optimization of the conventional thermal setup and a reduction of the interface deflection with TMF application significantly reduced dislocation densities inside the crystals. An average EPD value around 100 cm-2 was obtained for GaAs:Si growth with a growth-matched double-frequency TMF and applied BN susceptor in the single-crucible VGF setup.
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Tavakoli, Mohammad Hossein. "Numerical analysis of seeding process during Czochralski growth of oxide single crystals." [S.l.] : [s.n.], 2006. http://se6.kobv.de:8000/btu/volltexte/2006/14.

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Books on the topic "Growth of single crystals"

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Rashkovich, L. N. KDP-family single crystals. Bristol, Eng: A. Hilger, 1991.

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L, Szofran S., and United States. National Aeronautics and Space Administration. Scientific and Technical Information Division., eds. Growth of solid solution single crystals. [Washington, D.C.]: National Aeronautics and Space Administration, Scientific and Technical Information Division, 1987.

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N, Gurin V., ed. Single crystals of refractory compounds. Oxford, OX, England: Pergamon Press, 1988.

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Constantinidis, George. Growth and characterisation of single CuInSe2 crystals. Salford: University of Salford, 1988.

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de, Groh Henry C., Garimella Suresh V, and NASA Glenn Research Center, eds. Directional solidification of pure succinonitrile and a succinonitrile-acetone alloy. [Cleveland, Ohio]: National Aeronautics and Space Administration, Glenn Research Center, 1999.

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Andrzej, Majchrowski, Zieliński Jerzy, Institute of Technical Physics (Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego), and Komitet Badań Naukowych (Poland), eds. Single crystal growth, characterization, and applications: International Conference on Solid State Crystals '98 : 12-16 October 1998, Zakopane, Poland. Bellingham, Wash: SPIE--the International Society for Optical Engineering, 1999.

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Djamin, Martin. Growth and characterisation of CuInxGa1-xSe2 single crystals and device fabrication. Salford: University of Salford, 1993.

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Imanieh, Mohsen. Growth and characterisation of CuInse2 and CuGax-In1-xse2 single crystals. Salford: University of Salford, 1989.

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Yang, Guang. Flux pinning, defect analysis and growth of high temperature superconducting single crystals. Birmingham: University of Birmingham, 1994.

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Antoni, Rogalski, Adamiec Krzysztof, Madejczyk Paweł, Institute of Technical Physics (Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego), Polskie Towarzystwo Wzrostu Kryształów, Komitet Badań Naukowych (Poland), and Society of Photo-optical Instrumentation Engineers., eds. International Conference on Solid State Crystals 2000: Growth, characterization, and applications of single crystals : 9-13 October 2000, Zakopane, Poland. Bellingham, Wash: SPIE, 2001.

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Book chapters on the topic "Growth of single crystals"

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Bukin, G. V., A. A. Godovikov, V. A. Klyakhin, and V. S. Sobolev. "Growth of Emerald Single Crystals." In Growth of Crystals, 251–60. Boston, MA: Springer US, 1986. http://dx.doi.org/10.1007/978-1-4615-7119-3_25.

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Givargizov, E. I. "Single-Crystal Growth on Amorphous Substrates." In Growth of Crystals, 3–10. Boston, MA: Springer US, 1987. http://dx.doi.org/10.1007/978-1-4615-7122-3_1.

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Honig, J. M., and H. R. Harrison. "Growth of Single Crystals." In Inorganic Reactions and Methods, 257–58. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2007. http://dx.doi.org/10.1002/9780470145333.ch185.

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Tairov, Yu M., and V. F. Tsvetkov. "Growth of Bulk Silicon Carbide Single Crystals." In Growth of Crystals, 37–46. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4615-2379-6_4.

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Bespalov, V. I., V. I. Bredikhin, V. P. Ershov, V. I. Katsman, and S. Yu Potapenko. "Growth Rate Problems of KDP Type Single Crystals." In Growth of Crystals, 123–34. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3660-4_12.

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Litvin, B. N. "Growth of Single Crystals of Rare Earth Phosphates." In Growth of Crystals, 135–42. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3660-4_13.

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Emel’chenko, G. A., V. M. Masalov, and V. A. Tatarchenko. "Controlled Flux Growth of Complex Oxide Single Crystals." In Growth of Crystals, 121–34. Boston, MA: Springer US, 1992. http://dx.doi.org/10.1007/978-1-4615-3268-2_11.

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Davtyan, L. K., A. G. Nalbandyan, A. L. Pogosyan, and R. O. Sharkhatunyan. "Growth and Microhardness of a Potassium Pentaborate Single Crystal." In Growth of Crystals, 133–40. Boston, MA: Springer US, 1987. http://dx.doi.org/10.1007/978-1-4615-7122-3_12.

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Zasimchuk, I. K. "Dislocation Structures in Metallic Single Crystals Grown from the Melt." In Growth of Crystals, 205–13. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3660-4_19.

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Voronkova, V. I., and V. K. Yanovskii. "Growth, Detwinning, and Properties of YBa2Cu3Ox and TmBa2Cu3Ox Single Crystals." In Growth of Crystals, 153–69. Boston, MA: Springer US, 1996. http://dx.doi.org/10.1007/978-1-4613-1141-6_14.

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Conference papers on the topic "Growth of single crystals"

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Chai, Bruce H. T., J. Lefaucheur, and Anh-Tuyet Pham. "Growth of Nd:GdLiF4 single crystals." In OE/LASE'93: Optics, Electro-Optics, & Laser Applications in Science& Engineering, edited by Bruce H. T. Chai. SPIE, 1993. http://dx.doi.org/10.1117/12.149269.

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Porowski, Sylwester, and Izabella Grzegory. "Growth of Large GaN single crystals." In Advances in Optical Materials. Washington, D.C.: OSA, 2011. http://dx.doi.org/10.1364/aiom.2011.aiwc1.

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Majchrowski, Andrzej. "High-temperature solution growth of oxide single crystals." In International Conference on Solid State Crystals '98, edited by Andrzej Majchrowski and Jerzy Zielinski. SPIE, 1999. http://dx.doi.org/10.1117/12.342984.

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Kaczmarek, Slawomir M., Zygmunt Mierczyk, Krzysztof Kopczynski, Izabella Pracka, Anna Pajaczkowska, Marek Swirkowicz, Waldemar Giersz, and Ryszard Jablonski. "Growth and characterization of SrLaAlO4 (SLAO) single crystals." In Solid State Crystals: Materials Science and Applications, edited by Jozef Zmija. SPIE, 1995. http://dx.doi.org/10.1117/12.224933.

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Sugak, Dmitry Y., Andrej O. Matkovskii, Ivan M. Solskii, I. V. Stefanskii, Vladimir M. Gaba, Anatolij I. Mikhalevych, Vitaly V. Grabovski, Valentin I. Prokhorenko, B. N. Kopko, and V. Y. Oliinyk. "Growth and investigation of LiNbO3:MgO single crystals." In Nonlinear Optics of Liquid and Photorefractive Crystals, edited by Gertruda V. Klimusheva and Andrey G. Iljin. SPIE, 1996. http://dx.doi.org/10.1117/12.239216.

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Frukacz, Zygmunt, Zygmunt Mierczyk, and Dorota A. Pawlak. "YAG:V3+single crystal growth and their selected properties." In International Conference on Solid State Crystals '98, edited by Andrzej Majchrowski and Jerzy Zielinski. SPIE, 1999. http://dx.doi.org/10.1117/12.343018.

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Lukasiewicz, Tadeusz. "Potassium-titanyl-phosphate single crystals: properties and growth." In Liquid and Solid State Crystals: Physics, Technology, and Applications, edited by Jozef Zmija. SPIE, 1993. http://dx.doi.org/10.1117/12.156906.

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Miyazawa, S., T. Kanamori, S. Ichikawa, and H. Nakae. "Cz-growth of ferroelectric LaBGeO5 single crystals." In 12th European Quantum Electronics Conference CLEO EUROPE/EQEC. IEEE, 2011. http://dx.doi.org/10.1109/cleoe.2011.5942780.

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BODNAR, I. V., S. V. PAVLYUKOVETS, K. V. CHARNYAKOVA, J. A. FEDOTOVA, and I. A. VICTOROV. "GROWTH AND PROPERTIES OF FeIn2S4 SINGLE CRYSTALS." In Proceedings of the International Conference on Nanomeeting 2009. WORLD SCIENTIFIC, 2009. http://dx.doi.org/10.1142/9789814280365_0072.

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Yokota, Yuui, Shunsuke Kurosawa, Akira Yoshikawa, Masato Sato, Kazushige Tota, and Ko Onodera. "Crystal growth and optical properties of Ca3NbGa3Si2O14 single crystals grown under various atmosphere." In 2012 Joint 21st IEEE ISAF / 11th IEEE ECAPD / IEEE PFM (ISAF/ECAPD/PFM). IEEE, 2012. http://dx.doi.org/10.1109/isaf.2012.6297847.

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Reports on the topic "Growth of single crystals"

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Boatner, L. A., and M. Urbanik. Growth of large single crystals of MgO. Office of Scientific and Technical Information (OSTI), June 1997. http://dx.doi.org/10.2172/505740.

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Wu, Ping, Robert Kershaw, Kirby Dwight, and Aaron Wold. Growth and Characterization of Nickel-Doped ZnS Single Crystals. Fort Belvoir, VA: Defense Technical Information Center, September 1988. http://dx.doi.org/10.21236/ada199781.

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Sitar, Zlatko, and Raoul Schlesser. Growth of Single Crystals and Fabrication of GaN and AlN Wafers. Fort Belvoir, VA: Defense Technical Information Center, March 2006. http://dx.doi.org/10.21236/ada444058.

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Sitar, Z., and R. F. Davis. Growth of Single Crystals and Fabrication of GaN and AlN Wafers. Fort Belvoir, VA: Defense Technical Information Center, July 2000. http://dx.doi.org/10.21236/ada379749.

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Voloshinov, Vitaly B. Growth and Characterization of Tellurium Single Crystals for Applications in Imaging AOTFs. Fort Belvoir, VA: Defense Technical Information Center, November 2004. http://dx.doi.org/10.21236/ada524958.

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Kim, Doh-Yeon, N. M. Hwang, Ho-Yong Lee, D. Y. Yoon, and S. J. Kang. Fabrication of PMN-PT Single Crystals by Using the Exaggerated Grain Growth Method. Fort Belvoir, VA: Defense Technical Information Center, November 2001. http://dx.doi.org/10.21236/ada398431.

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Itoh, K. Growth and characterization of isotopically enriched [sup 70]Ge and [sup 74]Ge single crystals. Office of Scientific and Technical Information (OSTI), October 1992. http://dx.doi.org/10.2172/7186670.

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Maple, M. Brian, and Diego A. Zocco. Acquisition of Single Crystal Growth and Characterization Equipment. Office of Scientific and Technical Information (OSTI), December 2008. http://dx.doi.org/10.2172/943556.

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ADVANCED FUEL RESEARCH INC EAST HARTFORD CT. Epitaxial Growth of Single Crystal Diamond on Silicon. Fort Belvoir, VA: Defense Technical Information Center, September 1991. http://dx.doi.org/10.21236/ada242622.

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Galloway, Heather Claire. Thin films of metal oxides on metal single crystals: Structure and growth by scanning tunneling microscopy. Office of Scientific and Technical Information (OSTI), December 1995. http://dx.doi.org/10.2172/219542.

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