Relevant bibliographies by topics / Growth defects

Academic literature on the topic 'Growth defects'

Author: Grafiati
Published: 10 December 2022
Last updated: 28 January 2023

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Journal articles on the topic "Growth defects"

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Scandale, Eugenio, Sergio Lucchesi, and Giorgio Graziani. "Growth defects and growth marks in pegmatite beryls." European Journal of Mineralogy 2, no. 3 (June 21, 1990): 305–12. http://dx.doi.org/10.1127/ejm/2/3/0305.

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Agrosí, Giovanna, Eugenio Scandale, and Maria Arcangela Digennaro. "Growth defects of a melanite crystal." Neues Jahrbuch für Mineralogie - Abhandlungen 176, no. 1 (February 26, 2001): 89–107. http://dx.doi.org/10.1127/njma/176/2001/89.

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Agrosì, Giovanna, Gioacchino Tempesta, Eugenio Scandale, and Jeff W. Harris. "Growth and post-growth defects in a diamond from Finsch mine (South Africa)." European Journal of Mineralogy 25, no. 4 (December 20, 2013): 551–59. http://dx.doi.org/10.1127/0935-1221/2013/0025-2301.

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Gao, Jiang-Dong, Jian-Li Zhang, Xin Zhu, Xiao-Ming Wu, Chun-Lan Mo, Shuan Pan, Jun-Lin Liu, and Feng-Yi Jiang. "Detailed surface analysis of V-defects in GaN films on patterned silicon(111) substrates by metal–organic chemical vapour deposition." Journal of Applied Crystallography 52, no. 3 (May 31, 2019): 637–42. http://dx.doi.org/10.1107/s1600576719005521.

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The growth mechanism of V-defects in GaN films was investigated. It was observed that the crystal faces of both the sidewall of a V-defect and the sidewall of the GaN film boundary belong to the same plane family of \{ {{{10\bar 11}}} \}, which suggests that the formation of the V-defect is a direct consequence of spontaneous growth like that of the boundary facet. However, the growth rate of the V-defect sidewall is much faster than that of the boundary facet when the V-defect is filling up, implying that lateral growth of \{ {{{10\bar 11}}} \} planes is not the direct cause of the change in size of V-defects. Since V-defects originate from dislocations, an idea was proposed to correlate the growth of V-defects with the presence of dislocations. Specifically, the change in size of the V-defect is determined by the growth rate around dislocations and the growth rate around dislocations is determined by the growth conditions.
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Jones, D. P., and T. R. Leax. "Fatigue Crack Growth Testing of Sub-Clad Defects." Journal of Pressure Vessel Technology 121, no. 3 (August 1, 1999): 269–75. http://dx.doi.org/10.1115/1.2883702.

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Fatigue crack growth tests were performed on four-point bend specimens with cracklike defects intentionally placed in A302B low-alloy pressure vessel steel clad with 308/309L weld-deposited stainless steel. The defects were placed in the base metal under the cladding by machining a cavity from the side opposite the cladding, electric-discharge machining a very sharp flaw, fatigue precracking the flaw, and then filling up the cavity by a weld repair process. The specimens were stress relieved before fatigue testing. The specimens were fatigue cycled at positive load ratios until the defects broke through to the surface. The specimens were then fractured at liquid nitrogen temperatures to reveal the fracture surfaces. Seven different sub-clad flaw specimens were tested in room temperature air and each test provides a record of cycles to defect breakthrough. Changes in defect size and shape as a function of applied load cycles were obtained by beach-marking the crack at various stages of the load history. The results provide a set of embedded defect data which can be used for qualifying fatigue crack growth analysis procedures such as those in Section XI of the ASME Boiler and Pressure Vessel Code. A comparison between calculated and measured values shows that the ASME B&PV Section XI fatigue crack growth procedures conservatively predict cycles to defect breakthrough for small sub-clad defects.
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Hens, Philip, Julian Müller, Günter Wagner, Rickard Liljedahl, Erdmann Spiecker, and Mikael Syväjärvi. "Defect Generation and Annihilation in 3C-SiC-(001) Homoepitaxial Growth by Sublimation." Materials Science Forum 740-742 (January 2013): 283–86. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.283.

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In this paper we present a concept on the defect generation and annihilation during the homoepitaxial growth step of cubic silicon carbide by sublimation epitaxy on templates grown by chemical vapor deposition on silicon substrates. Several structural defects like stacking faults, twins and star defects show opposite evolution from the template layer into the sublimation grown material. While single planar defects tend to annihilate with increasing layer thickness, the defect clusters assigned to the star defects are enlarging. These issues contribute to a balance of how to achieve the best possible quality on thick layers.
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Maerten, Thibault, Cédric Jaoul, Roland Oltra, Patrice Duport, Christophe Le Niniven, Pascal Tristant, Frédéric Meunier, and Olivier Jarry. "Micrometric Growth Defects of DLC Thin Films." C — Journal of Carbon Research 5, no. 4 (November 14, 2019): 73. http://dx.doi.org/10.3390/c5040073.

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Defects in diamond-like carbon coatings deposited on corrosion sensitive 100Cr6 steel have been studied. Diamond-like carbon (DLC) thin films are promising for corrosion protection due to chemical inertness and low electrical conductivity. Nevertheless, the performance of these coating is highly sensitive to the presence of uncoated areas. These defects represent the primary way of substrate degradation in aggressive environments. An in situ optical microscopy coupled to an electrochemical activation was developed to reveal micrometric growth defects and observe that they were at the origin of corrosion. A square wave voltammetry was applied to increase the sensitivity of electrochemical techniques based on the detection of the dissolution of the bare metal surface triggered by the presence of uncoated spots. This method can be utilized to quantify defect density arising from vapor deposition processes.
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Everson, M. P., and M. A. Tamor. "Investigation of growth rates and morphology for diamond growth by chemical vapor deposition." Journal of Materials Research 7, no. 6 (June 1992): 1438–44. http://dx.doi.org/10.1557/jmr.1992.1438.

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We describe two complementary studies of diamond growth by chemical vapor deposition. In the first, the early stages of growth of randomly distributed nuclei on silicon are studied by scanning tunneling microscopy. For growth times from 1 to 30 min nearly all crystallites are three dimensional, and increase in volume as t1.5. Although this result could be interpreted in terms of diffusion limited growth, the conditions for diamond CVD are more consistent with rate limited growth where the crystals are expected to gain volume as t3. This anomaly can be explained in terms of a two-species growth mechanism in which the rate constant for carbon addition is proportional to the diffusion limited flux of atomic hydrogen. Other mechanisms giving rise to the observed t1.5 dependence are also considered. The second study uses both scanning electron and tunneling microscopies to examine the morphology of a boron-doped film homoepitaxial to the {100} surface of natural type 2a diamond. In regions distant from gross defects, this film is very smooth. However, gross defects appear to initiate growth of new epitaxial layers at a rate much higher than in defect-free regions. This observation suggests that diamond growth is promoted by “enabling defects” and that without such defects nucleation of new layers is a slow process and permits layer-by-layer growth at a much lower rate.
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Kirste, Lutz, Karolina Grabianska, Robert Kucharski, Tomasz Sochacki, Boleslaw Lucznik, and Michal Bockowski. "Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography." Materials 14, no. 19 (September 22, 2021): 5472. http://dx.doi.org/10.3390/ma14195472.

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X-ray topography defect analysis of entire 1.8-inch GaN substrates, using the Borrmann effect, is presented in this paper. The GaN wafers were grown by the ammonothermal method. Borrmann effect topography of anomalous transmission could be applied due to the low defect density of the substrates. It was possible to trace the process and growth history of the GaN crystals in detail from their defect pattern imaged. Microscopic defects such as threading dislocations, but also macroscopic defects, for example dislocation clusters due to preparation insufficiency, traces of facet formation, growth bands, dislocation walls and dislocation bundles, were detected. Influences of seed crystal preparation and process parameters of crystal growth on the formation of the defects are discussed.
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Sugiyama, Naohiro, Masanori Yamada, Yasushi Urakami, Masakazu Kobayashi, Takashi Masuda, Keisuke Shigetoh, Itaru Gunjishima, Fusao Hirose, and Shoichi Onda. "Characterization of Vacant Broken Line Defects in A-Face Grown Crystals of Silicon Carbide." Materials Science Forum 778-780 (February 2014): 386–89. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.386.

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A new type of defects, vacant broken line defects, was found to occur in a-face grown crystals of 4H-Silicon Carbide. We characterized the vacant broken line defects by high voltage transmission electron microscope (HV-TEM). The HV-TEM image revealed that the edges of broken line defects were connected by a bundle of dislocations, which elongated to the growth direction on the basal plane. The analysis by gb method for determining Burgers vector indicated that the dislocations were not pure screw dislocations, but complex of screw and edge dislocations. The vacant broken line defect was considered to be a quasi-stable state of a bundle of basal plane dislocations in a-face growth, similar to a micropipe defect in c-face growth.
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Dissertations / Theses on the topic "Growth defects"

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Chiang, Chang-Yang. "Electron microscopic studies of crystal growth and defects in inorganic solids." Thesis, University of St Andrews, 2017. http://hdl.handle.net/10023/12026.

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Biswas, Barnali. "Growth defects in CrN/NbN coatings deposited by HIPIMS/UBM techniques." Thesis, Sheffield Hallam University, 2017. http://shura.shu.ac.uk/18154/.

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In recent years, high power impulse magnetron sputtering (HIPIMS) has caught the attention of users due to its ability to produce dense coatings. However, microscopic studies have shown that HIPIMS deposited coatings can suffer from some surface imperfections even though the overall number of defects can be significantly lower compared to, for example, arc deposited coatings of similar thickness. Defects can degrade the coating performance thus any kind of defect is undesirable. To better understand the nature of these imperfections and the science of their formation, three sets of chromium nitride/niobium nitride (CrN/NbN) coatings were deposited using HIPIMS technique combined with unbalanced magnetron sputtering (UBM) by varying the deposition parameters, i.e. deposition time (t = 15 to 120 min), bias voltage (Ub = - 40 to - 150 V) and chamber pressure (P = 0.2 to 1 Pa). For each set, one parameter was varied and other two were kept constant. All these experiments were carried out with chamber conditions close to those found in industrial environment. The study revealed that the generated defects were similar for all the coatings and with the increase in deposition time/bias voltage/chamber pressure the surface area covered by optically visible defects (surface defect density) was increased. These defects were categorised as flakes related defects (nodular, open void and cone-like defects) and defects associated with substrate pits (pinhole defects). Depending on their types, the defects influenced the corrosion and tribological properties of the coatings. As the origins of most defects were flakes (generated from the chamber components), an additional study was conducted to understand the influence of chamber cleanliness on defect generation. As expected, surface defect density of the coating produced in a comparatively clean chamber was reduced noticeably (from 3.18 % to 1.37 % after cleaning). Coatings with lower surface defects performed significantly well during corrosion and tribological tests. However, the comparison between pure UBM and combined HIPIMS/UBM deposited coatings suggested that along with the defects, coating structure also had a major role in corrosion, wear and friction mechanisms. Even for deposition conditions where HIPIMS coatings showed higher surface defects, owing to their microstructures, their corrosion resistance and tribological behaviour were superior to the UBM deposited coatings.
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Cristiano, Filadelfo. "Extended defects in SiGe device structures formed by ion implantation." Thesis, University of Surrey, 1998. http://epubs.surrey.ac.uk/843871/.

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The use of SiGe/Si heterostructures in the fabrication of electronic devices results in an improvement of the device performances with respect to bulk silicon. Ion implantation has been proposed as one of the possible technologies to produce these structures and, thus, the aim of this work is to develop an ion beam technology to fabricate strained SiGe heterostructures. The formation of extended defects in SiGe alloy layers formed by high dose Ge+ ion implantation followed by Solid Phase Epitaxial Growth (SPEG) has been investigated by transmission electron microscopy. Rutherford backscattering spectroscopy has also been used to determine the chemical composition and the crystalline quality of the synthesised structures. In addition, X-ray diffraction has been used to evaluate the strain level in selected samples. Two different structures have been studied in this project. The first consisted of "all-implanted" layers, where the Ge+ implants were followed in some cases by additional implants of Si+ and/or C+ ions, prior to SPEG, to investigate methods to inhibit defect formation. The second was achieved by capping the ion beam synthesised SiGe alloy layer by the deposition of a thin film of silicon, in order to realise structures compatible with device dimensions. Single crystal device worthy SiGe alloy layers have been achieved by implantation of Ge+ ions at energies ranging from 70 keV to 400 keV, where the only extended defects observed are EOR defects at a depth correspondent to the a/c interface formed during the Ge+ implant. In some cases, "hairpin" dislocations have also been observed in the vicinity of the EOR defects and extending up to the surface. Both types of defects are annihilated after post-amorphisation with 500 keV Si+ and replaced with dislocation loops at a depth of about 1 fj,m. For each Ge+ implantation energy a critical value of the peak germanium concentration exists above which the structures relax through the formation of stacking faults or "hairpin" dislocations nucleated in the vicinity of the peak of the germanium concentration depth profile and extending up to the surface. A critical value of the elastic energy stored in the structures (~300 mJ/m2) has been determined above which ion beam synthesised SiGe alloys relax, independently of the implantation energy. This empirical approach has been found to successfully account for the results obtained in this work as well as in many other studies reported in the literature. "Hairpin" dislocations formed under different experimental conditions have been investigated by plan view TEM and have been found to have the same crystallographic orientation () and Burgers vector (b= a ). Their formation has been explained within a "strain relaxation model". For a regrowth temperature of 700° C, all samples investigated by XRD have been found to be almost fully strained, including samples containing relaxation-induced defects, indicating that, under these conditions, the energy transferred to the defects is very low. C+ co-implantation has been successfully used to reduce both relaxation-induced defects and EOR dislocation loops. It is noted that a mixed technology entailing both layer deposition and ion implantation to produce the Si/SiGe/Si device structures requires extra process steps to control surface contaminations, pre cleaning and/or native oxide formation, resulting in increased fabrication costs. In this work an " all-implanted" route to the synthesis of Si/SiGe/Si device structures is therefore described, which exploits all of the advantages given by ion implantation.
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Kadhim, N. J. "Morphological imperfections associated with molecular beam epitaxial growth of GaAs layers." Thesis, University of Hertfordshire, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.377702.

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Li, Lan. "Ab-initio simulations of graphite defects and growth mechanisms of carbon nanotubes." Thesis, University of Cambridge, 2006. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.614271.

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Golea, Mostefa. "AB(2)C(4) semiconducting compounds crystal growth, intrinsic defects and optical properties." Thesis, University of Ottawa (Canada), 1988. http://hdl.handle.net/10393/5374.

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Chen, Jhewn-Kuang. "The role of defects during precipitate growth in a Ni-45wt% Cr alloy." Diss., This resource online, 1995. http://scholar.lib.vt.edu/theses/available/etd-06062008-162241/.

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Oest, Megan Elizabeth. "Dual Osteogenic and Angiogenic Growth Factor Delivery as a Treatment for Segmental Bone Defects." Diss., Georgia Institute of Technology, 2007. http://hdl.handle.net/1853/16264.

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A new model of a critically-sized segmental femoral bone defect in rats was developed to enable in vivo imaging and facilitate post-mortem mechanical testing of samples. The critically-sized nature of the model was assessed and confirmed. The efficacy of sustained co-delivery of osteogenic (BMP-2 and TGF- Ò3) and angiogenic (VEGF) growth factors in promoting functional bone repair was assessed. Effects of scaffold modification in terms of geometry and composition were evaluated. The results indicated that co-delivery of BMP-2 and TGF- Ò3 resulted in a dose-dependent improvement in functional bone repair. Modification of the polylactide scaffold to include an absorbable ceramic component and a cored out geometry enhanced rate of union. Addition of VEGF to the scaffold treatment did not significantly impact revascularization of the defect site or functional repair of the bone defect. These data demonstrate that the complex environment of an acute bone defect requires different treatment strategies than simple ectopic models would suggest. A positive predictive correlation between bone repair parameters measured in vivo and mechanical functionality was established. The novel defect model demonstrated robustness and reproducibility. Implications for further research are discussed.
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Ryningen, Birgit. "Formation and growth of crystal defects in directionally solidified multicrystalline silicon for solar cells." Doctoral thesis, Norges teknisk-naturvitenskapelige universitet, Institutt for materialteknologi, 2008. http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-4980.

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Farzana, Esmat. "Defects and Schottky Contacts in β-Ga2O3:Properties, Influence of Growth Method and Irradiation." The Ohio State University, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=osu1555495732936101.

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Books on the topic "Growth defects"

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D, Zolotkov V., Mordi͡u︡k V. S, and Smirnov, Leonid Stepanovich, fl. 1979-, eds. Rostovye i radiat͡s︡ionnye defekty kristallov li͡u︡minoforov dli͡a︡ istochnikov sveta. Novosibirsk: Izd-vo "Nauka," Sibirskoe otd-nie, 1986.

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Gabetta, G. Application of a two-mechanism model for environmentally-assisted crack growth. Washington, DC: Division of Engineering Safety, Office of Nuclear Regulatory Research, U.S. Nuclear Regulatory Commission, 1986.

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Gabetta, G. Application of a two-mechanism model for environmentally-assisted crack growth. Washington, DC: Division of Engineering Safety, Office of Nuclear Regulatory Research, U.S. Nuclear Regulatory Commission, 1986.

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Gabetta, G. Application of a two-mechanism model for environmentally-assisted crack growth. Washington, DC: Division of Engineering Safety, Office of Nuclear Regulatory Research, U.S. Nuclear Regulatory Commission, 1986.

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Michael, Dudley, and Materials Research Society Meeting, eds. Silicon carbide 2006--materials, processing, and devices: Symposium held April 18-20, 2006, San Francisco, California, U.S.A. Warrendale, Pa: Materials Research Society, 2006.

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Nykänen, Timo. Mk-factor equations and crack growth simulations for fatigue of fillet-welded t-joints. Lappeenranta: Lappeenranta University of Technology, 1993.

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Weingartner, D. H. Variations in the growth and defect of aspen (Populus tremuloides Michx.) clones in Northern Ontario. Ontario: Ministry of Natural Resources, 1985.

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Barney, Craig. Fatigue crack growth from unbridged defects in continuous fibre reinforced titanium metal matrix composites. Birmingham: University of Birmingham, 1995.

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Triboulet, R., and P. Siffert. CdTe and related compounds: Physics, defects, hetero- and nanostructures, crystal growth surfaces and applications. Edited by ScienceDirect (Online service). Oxford: Elsevier, 2010.

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International, Symposium on High Purity Silicon (9th 2006 Cancún Mexico). High purity silicon 9. Pennington, NJ: Electrochemical Society, 2006.

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Book chapters on the topic "Growth defects"

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Vere, A. W. "Defects in Crystals." In Crystal Growth, 29–65. Boston, MA: Springer US, 1987. http://dx.doi.org/10.1007/978-1-4757-9897-5_3.

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Buzynin, A. N., N. I. Bletskan, Yu N. Kuznetsov, and N. N. Sheftal’. "Growth Defects in Semiconductor Crystals." In Growth of Crystals, 291–300. Boston, MA: Springer US, 1986. http://dx.doi.org/10.1007/978-1-4615-7119-3_29.

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Phillips, John A., Angel Ferrandez, Herwig Frisch, Ruth Illig, and Klaus Zuppinger. "Defects of Growth Hormone Genes." In Human Growth Hormone, 211–26. Boston, MA: Springer US, 1986. http://dx.doi.org/10.1007/978-1-4615-7201-5_18.

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Buzynin, A. N., A. E. Luk’yanov, V. V. Osiko, and V. M. Tatarintsev. "Electrically Active Defects of Silicon Crystals." In Growth of Crystals, 151–62. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4615-2379-6_12.

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Malaquias, Alexsandra C., and Alexander A. L. Jorge. "Growth Defects in Noonan Syndrome." In Handbook of Growth and Growth Monitoring in Health and Disease, 2201–15. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-1795-9_131.

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Tetlow, Holly Alexandra. "Removing Defects: Healing Single Vacancy Defects." In Theoretical Modeling of Epitaxial Graphene Growth on the Ir(111) Surface, 143–60. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-65972-5_7.

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Ishimoto, Shin-ichi. "Microtia and Sensory Defects in Growth." In Handbook of Growth and Growth Monitoring in Health and Disease, 1853–65. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-1795-9_112.

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Bergamaschi, Rosalba, Cristina Bergonzoni, Laura Mazzanti, Emanuela Scarano, Francesca Mencarelli, Valentina Rosetti, Francesca Messina, Lorenzo Iughetti, and Alessandro Cicognani. "Hearing Growth Defects in Turner Syndrome." In Handbook of Growth and Growth Monitoring in Health and Disease, 1437–44. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-1795-9_86.

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Mazenko, Gene F. "Introduction to Growth Kinetics Problems." In Formation and Interactions of Topological Defects, 63–92. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4615-1883-9_3.

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Punin, Yu O. "Formation of Autodeformation Defects in Crystal Growth from Solution." In Growth of Crystals, 121–31. Boston, MA: Springer US, 1987. http://dx.doi.org/10.1007/978-1-4615-7122-3_11.

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Conference papers on the topic "Growth defects"

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Evans, S., and P. Morey. "173. Construction Defects and Microbial Growth." In AIHce 2002. AIHA, 2002. http://dx.doi.org/10.3320/1.2766094.

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Fenyvesi, L., H. Lu, and T. R. Jack. "Prediction of Corrosion Defect Growth on Operating Pipelines." In 2004 International Pipeline Conference. ASMEDC, 2004. http://dx.doi.org/10.1115/ipc2004-0268.

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Integrity management is based on the ability of the pipeline operator to predict the growth of defects detected in inspection programs on an operating pipeline system. Accurate predictions allow targeted interventions to be scheduled in a cost effective and timely fashion for those defects that pose a high potential risk. In this paper two distinct theories are described for predicting the development of corrosion pits on an operating pipeline. The first theory corresponds to the traditional approach in which the past growth behaviour of each defect is used to predict the rate of its future development. In this theory each defect is assumed to have its own unique corrosion environment in which only a very limited range of corrosion rates will be seen. In the second approach, this assumption is not made. Instead any corrosion defect is allowed to grow at any likely rate over any time interva. In this approach an arbitrary selection of corrosion rates derived from the overall profile of past rates seen for all defects is applied to each defect over time. Predicted distributions derived by computer simulation of the initiation and growth of corrosion defects according to each theory have been compared to an actual defect depth distribution derived by in line inspection (ILI) of an operating pipeline. The success of the two models is compared and implications for pipeline integrity management are discussed.
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Rudolph, Peter. "Fundamentals of Defects in Crystals." In PERSPECTIVES ON INORGANIC, ORGANIC, AND BIOLOGICAL CRYSTAL GROWTH: FROM FUNDAMENTALS TO APPLICATIONS: Basedon the lectures presented at the 13th International Summer School on Crystal Growth. AIP, 2007. http://dx.doi.org/10.1063/1.2751910.

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Dessein, Thomas, Brent Ayton, and Travis Sera. "Characterizing Corrosion Defects With Apparent High Growth Rates on Transmission Pipelines." In 2020 13th International Pipeline Conference. American Society of Mechanical Engineers, 2020. http://dx.doi.org/10.1115/ipc2020-9572.

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Abstract Consecutive in-line inspections of transmission pipelines enable a comparison between the inspection results to characterize corrosion growth. Despite the high levels of in-line inspection tool accuracy and detection capabilities, corrosion defects with low calculated burst capacities may be detected on a subsequent inspection that were not reported in a previous inspection. These newly reported defects can pose a substantial challenge as the apparent growth rates between inspections of these defects can potentially drive unnecessary repair digs. This paper characterizes the contributing factors that can explain these phenomena, including: • Typical corrosion growth rates and their associated statistical frequency • The diminishing detection capability of inspection tools for smaller defects • The inspection tool minimum reporting threshold • The measurement accuracy of inspection tools. A statistical analysis was developed to quantify this interacting set of factors using Monte Carlo simulations that work retrospectively, covering a range of observed measured defect depths and then simulating the processes that could lead to newly reported defects being un-matched in a previous inspection. This analysis can be used to quantify the likelihood that a defect of a specific measured size would have been unreported in an earlier inspection due only to the performance characteristics of the inspection tool, and not as a result of defect growth that initiated since the time of the previous inspection. A set of case studies covering a range of pipeline inspection intervals ranging from 2 to 10 years are presented to demonstrate how this approach can be used to quantify appropriate growth rates that may be applied to these un-matched defects when assessing the remaining life or predicted probability of failure.
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Dann, Markus R., Marc A. Maes, and Mamdouh M. Salama. "Pipeline Corrosion Growth Modeling for In-Line Inspection Data Using a Population-Based Approach." In ASME 2015 34th International Conference on Ocean, Offshore and Arctic Engineering. American Society of Mechanical Engineers, 2015. http://dx.doi.org/10.1115/omae2015-41016.

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To manage the integrity of corroded pipelines reliable estimates of the current and future corrosion growth process are required. They are often obtained from in-line inspection data by matching defects from two or more inspections and determining corrosion growth rates from the observed growth paths. In practice only a (small) subset of the observed defects are often reliably matched and used in the subsequent corrosion growth analysis. The information from the remaining unmatched defects on the corrosion growth process are typically ignored. Hence, all decisions that depend on the corrosion growth process such as maintenance and repair requirements and re-inspection intervals, are based on the information obtained from the (small) set of matched defects rather than all observed corrosion anomalies. A new probabilistic approach for estimating corrosion growth from in-line inspection data is introduced. It does not depend on defect matching and the associated defect matching uncertainties. The reported defects of an inspection are considered from a population perspective and the corrosion growth is determined from two or more defect populations. The distribution of the reported defect sizes is transformed into the distribution of the actual defect sizes by adjusting it for detectability, false calls, and sizing uncertainties. The obtained distribution is then used to determine the parameters of the assumed gamma-distributed corrosion growth process in order to forecast future metal loss in the pipeline. As defect matching is not required all reported corrosion defects are used in the probabilistic analysis rather than the truncated set of matched defects. A numerical example is provided where two in-line inspections are analyzed.
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Beye, A. C., G. Neu, J. P. Contour, J. C. Garcia, and B. Gil. "Growth-Induced Complex Defects In GaAs Grown By Molecular Beam Epitaxy." In 1988 Semiconductor Symposium, edited by Orest J. Glembocki, Fred H. Pollak, and Fernando A. Ponce. SPIE, 1988. http://dx.doi.org/10.1117/12.947427.

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Rybaczuk, Marek, and Adam Cetera. "Nonhomogeneous Fractal Growth of Fatigue Defects in Materials." In SAE Brasil International Conference on Fatigue. 400 Commonwealth Drive, Warrendale, PA, United States: SAE International, 2001. http://dx.doi.org/10.4271/2001-01-4057.

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Logofatu, C., I. Licea, N. Mincu, and Cristiana E. A. Grigorescu. "Optical homogeneity and growth defects in sapphire crystals grown by different methods." In ROMOPTO 2000: Sixth Conference on Optics, edited by Valentin I. Vlad. SPIE, 2001. http://dx.doi.org/10.1117/12.432821.

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Snyder, Todd, D. H. Stone, and Joseph Kristan. "Wheel Flat and Out-of-Round Formation and Growth." In IEEE/ASME 2003 Joint Rail Conference. ASMEDC, 2003. http://dx.doi.org/10.1115/rtd2003-1659.

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Wheel flats and out-of rounds (OORs) are defects that can cause high impacts that impart damage to track and equipment. This paper presents an analysis of data gathered from wheel impact load detectors on the Union Pacific Railroad and data gathered from the Transportation Technology Center, Inc. (TTCI) Wheel Defect research Consortium.
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Zhang, Hongyu. "An initial study of the growth of eclipse defects." In the 2008 international workshop. New York, New York, USA: ACM Press, 2008. http://dx.doi.org/10.1145/1370750.1370785.

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Reports on the topic "Growth defects"

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Shechtman, D., J. L. Hutchison, L. H. Robins, E. N. Farabaugh, and A. Feldman. Growth Defects in Diamond Films. Fort Belvoir, VA: Defense Technical Information Center, July 1992. http://dx.doi.org/10.21236/ada253618.

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Klein, William. Collaborative Research: failure of RockMasses from Nucleation and Growth of Microscopic Defects and Disorder. Office of Scientific and Technical Information (OSTI), September 2016. http://dx.doi.org/10.2172/1323903.

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Awe, Thomas James. Benchmarking 3D-MHD simulations of electrothermal instability growth by studying z-pinches with engineered defects. Office of Scientific and Technical Information (OSTI), October 2019. http://dx.doi.org/10.2172/1572223.

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Li, Sheng S. Study of Grown-In Defects Verses Growth Parameters in GaAs and Al(x)Ga(1-x)AS Epitaxial Films Grown by LPE and MOCVD Techniques. Fort Belvoir, VA: Defense Technical Information Center, June 1985. http://dx.doi.org/10.21236/ada173736.

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Morgan, Caroline G. Theoretical Investigation of Point Defects and Defect Complexes in Low-Temperature-Grown GaAs. Fort Belvoir, VA: Defense Technical Information Center, December 1999. http://dx.doi.org/10.21236/ada387327.

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Jander, Georg, and Daniel Chamovitz. Investigation of growth regulation by maize benzoxazinoid breakdown products. United States Department of Agriculture, January 2015. http://dx.doi.org/10.32747/2015.7600031.bard.

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Introduction Previous research had suggested that benzoxazinoids, a class of defensive metabolites found in maize, wheat, rye, and wild barley, are not only direct insect deterrents, but also influence other areas of plant metabolism. In particular, the benzoxazinoid 2,4-dihydroxy-7-methoxy-2H-1,4-benzoxa- zin-3(4H)- one (DIMBOA) was implicated in: (i) altering plant growth by interfering with auxin signaling, and (ii) leading to the induction of gene expression changes and secondary plant defense responses. The overall goal of this proposal was to identify mechanisms by which benzoxazinoids influence other aspects of plant growth and defense. Specifically, the following hypotheses were proposed to be tested as part of an approved BARD proposal: Benzoxazinoid breakdown products directly interfere with auxin perception Global changes in maize and barley gene expression are induced by benzoxazinoid activation. There is natural variation in the maize photomorphogenic response to benzoxazinoids. Although the initial proposal included experiments with both maize and barley, there were some technical difficulties with the proposed transgenic barley experiments and most of the experimental results were generated with maize. Summary of major findings Previous research by other labs, involving both maize and other plant species, had suggested that DIMBOA alters plant growth by interfering with auxin signaling. However, experiments conducted in both the Chamovitz and the Jander labs using Arabidopsis and maize, respectively, were unable to confirm previously published reports of exogenously added DIMBOA effects on auxin signaling. Nevertheless, analysis of bx1 and bx2 maize mutant lines, which have almost no detectable benzoxazinoids, showed altered responses to blue light signaling. Transcriptomic analysis of maize mutant lines, variation in inbred lines, and responses to exogenously added DIMBOA showed alteration in the transcription of a blue light receptor, which is required for plant growth responses. This finding provides a novel mechanistic explanation of the trade-off between growth and defense that is often observed in plants. Experiments by the Jander lab and others had demonstrated that DIMBOA not only has direct toxicity against insect pests and microbial pathogens, but also induces the formation of callose in both maize and wheat. In the current project, non-targeted metabolomic assays of wildtype maize and mutants with defects in benzoxazinoid biosynthesis were used to identify unrelated metabolites that are regulated in a benzoxazinoid-dependent manner. Further investigation identified a subset of these DIMBOA-responsive compounds as catechol, as well as its glycosylated and acetylated derivatives. Analysis of co-expression data identified indole-3-glycerol phosphate synthase (IGPS) as a possible regulator of benzoxazinoid biosynthesis in maize. In the current project, enzymatic activity of three predicted maize IGPS genes was confirmed by heterologous expression. Transposon knockout mutations confirmed the function of the maize genes in benzoxazinoid biosynthesis. Sub-cellular localization studies showed that the three maize IGPS proteins are co-localized in the plastids, together with BX1 and BX2, two previously known enzymes of the benzoxazinoid biosynthesis pathway. Implications Benzoxazinoids are among the most abundant and effective defensive metabolites in maize, wheat, and rye. Although there is considerable with-in species variation in benzoxazinoid content, very little is known about the regulation of this variation and the specific effects on plant growth and defense. The results of this research provide further insight into the complex functions of maize benzoxazinoids, which are not only toxic to pests and pathogens, but also regulate plant growth and other defense responses. Knowledge gained through the current project will make it possible to engineer benzoxazinoid biosynthesis in a more targeted manner to produce pest-tolerant crops without negative effects on growth and yield.
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Morgan, Caroline G. Augmented Student Participation in Theoretical Investigation of Point Defects and Defect Complexes in Low-Temperature-Grown GaAs. Fort Belvoir, VA: Defense Technical Information Center, June 2001. http://dx.doi.org/10.21236/ada405900.

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Fabietti, L. M. R. Interface stability and defect formation during crystal growth. Office of Scientific and Technical Information (OSTI), January 1991. http://dx.doi.org/10.2172/5943509.

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Bedair, S. M. Defect Reduction in Epitaxial Growth Using Superlattice Buffer Layers. Fort Belvoir, VA: Defense Technical Information Center, July 1988. http://dx.doi.org/10.21236/ada198409.

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Veilleux, Richard, and David Levy. Potato Germplasm Development for Warm Climates. United States Department of Agriculture, October 1992. http://dx.doi.org/10.32747/1992.7561057.bard.

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Complex potato hybrids derived from crosses between cv. Atlantic and 11 clones of three genomic compositions, all with an unadapted component from previously identified heat tolerant accessions, were evaluated in the field in Israel and Virginia and in controlled environments in Israel. Heat tolerance was exhibited in the field by the ability of many of these hybrids to tuberize under severe heat stress when cv. Atlantic did not tuberize at all. The complex hybrids also exhibited fewer internal defects (heat necrosis, hollow heart) than Atlantic. Studies to determine if heat stress applied during anther culture or to pollen samples prior to pollination could affect gametic selection towards more heat tolerant progenies were also undertaken. There was some evidence of greater heat tolerance (longer survival under heat stress) in the anther-derived population that had been regenerated under heat stress. The seedlings resulting from crosses with heat-treated pollen also exhibited greater haulm growth under heat stress compared with controls. However, the poor adaption of the germplasm prevented a firm conclusion about gametic selection. The introduction of exotic germplasm into cultivated potato has considerable potential to adapt potato to nontraditional growing seasons and climates. However, such hybrids will require continued selection and evaluation to retain the traits required for commercial production.
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