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Relevant bibliographies by topics / Graphene p-n junction

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Academic literature on the topic 'Graphene p-n junction'

Author: Grafiati

Published: 6 September 2023

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Journal articles on the topic "Graphene p-n junction"

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Fan, Yan, Tao Wang, Yinwei Qiu, et al. "Pure Graphene Oxide Vertical p–n Junction with Remarkable Rectification Effect." Molecules 26, no. 22 (2021): 6849. http://dx.doi.org/10.3390/molecules26226849.

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Graphene p-n junctions have important applications in the fields of optical interconnection and low–power integrated circuits. Most current research is based on the lateral p-n junction prepared by chemical doping and other methods. Here, we report a new type of pure graphene oxide (pGO) vertical p-n junctions which do not dope any other elements but only controls the oxygen content of GO. The I–V curve of the pGO vertical p–n junction demonstrates a remarkable rectification effect. In addition, the pGO vertical p–n junction shows stability of its rectification characteristic over long-term st

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Indykiewicz, K., C. Bray, C. Consejo, et al. "Current-induced enhancement of photo-response in graphene THz radiation detectors." AIP Advances 12, no. 11 (2022): 115009. http://dx.doi.org/10.1063/5.0117818.

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Thermoelectric readout in a graphene terahertz (THz) radiation detector requires a p- n junction across the graphene channel. Even without an intentional p- n junction, two latent junctions can exist in the vicinity of the electrodes/antennas through the proximity to the metal. In a symmetrical structure, these junctions are connected back-to-back and therefore counterbalance each other with regard to rectification of the ac signal. Because of the Peltier effect, a small dc current results in additional heating in one and cooling in another p- n junction, thereby breaking the symmetry. The p-

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Low, Tony, Seokmin Hong, Joerg Appenzeller, Supriyo Datta, and Mark S. Lundstrom. "Conductance Asymmetry of Graphene p-n Junction." IEEE Transactions on Electron Devices 56, no. 6 (2009): 1292–99. http://dx.doi.org/10.1109/ted.2009.2017646.

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Liang, Jierui, Ke Xu, Swati Arora, Jennifer E. Laaser, and Susan K. Fullerton-Shirey. "Ion-Locking in Solid Polymer Electrolytes for Reconfigurable Gateless Lateral Graphene p-n Junctions." Materials 13, no. 5 (2020): 1089. http://dx.doi.org/10.3390/ma13051089.

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A gateless lateral p-n junction with reconfigurability is demonstrated on graphene by ion-locking using solid polymer electrolytes. Ions in the electrolytes are used to configure electric-double-layers (EDLs) that induce p- and n-type regions in graphene. These EDLs are locked in place by two different electrolytes with distinct mechanisms: (1) a polyethylene oxide (PEO)-based electrolyte, PEO:CsClO4, is locked by thermal quenching (i.e., operating temperature < Tg (glass transition temperature)), and (2) a custom-synthesized, doubly-polymerizable ionic liquid (DPIL) is locked by thermally

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Jung, Min Wook, Woo Seok Song, Sung Myung, Jong Sun Lim, Sun Sook Lee, and Ki Seok An. "Formation of Graphene P-N Junction Arrays Using Soft-Lithographic Patterning and Cross-Stacking." Advanced Materials Research 1098 (April 2015): 63–68. http://dx.doi.org/10.4028/www.scientific.net/amr.1098.63.

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Two key issues in graphene-based p-n junction applications are the manipulation of the type and density of carrier in graphene and the development of a facile fabrication process. Here we reported the formation of graphene films with tunable carrier type by doping of ethoxylated polyethylenimine (PEIE) and Au nanoparticles (NPs). The carrier density of doped graphene can be tuned by altering the concentration of the dopant solutions. The doping effects of PEIE and Au NPs on graphene were monitored by resonant Raman spectroscopy and electrical transport measurements. Graphene p-n junction array

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Zhang, Shu-Hui, Jia-Ji Zhu, Wen Yang, and Kai Chang. "Focusing RKKY interaction by graphene P–N junction." 2D Materials 4, no. 3 (2017): 035005. http://dx.doi.org/10.1088/2053-1583/aa76d2.

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Lv, Shu-Hui, Shu-Bo Feng, and Yu-Xian Li. "Thermopower and conductance for a graphene p–n junction." Journal of Physics: Condensed Matter 24, no. 14 (2012): 145801. http://dx.doi.org/10.1088/0953-8984/24/14/145801.

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Yu, Tianhua, Changdong Kim, Chen-Wei Liang, and Bin Yu. "Formation of Graphene p-n Junction via Complementary Doping." IEEE Electron Device Letters 32, no. 8 (2011): 1050–52. http://dx.doi.org/10.1109/led.2011.2158382.

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Peters, Eva C., Eduardo J. H. Lee, Marko Burghard, and Klaus Kern. "Gate dependent photocurrents at a graphene p-n junction." Applied Physics Letters 97, no. 19 (2010): 193102. http://dx.doi.org/10.1063/1.3505926.

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Li, Hao, Shubin Su, Chenhui Liang, et al. "UV Rewritable Hybrid Graphene/Phosphor p–n Junction Photodiode." ACS Applied Materials & Interfaces 11, no. 46 (2019): 43351–58. http://dx.doi.org/10.1021/acsami.9b14461.

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Dissertations / Theses on the topic "Graphene p-n junction"

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Mayorov, Alexander. "Tunnelling and noise in GaAs and graphene nanostructures." Thesis, University of Exeter, 2008. http://hdl.handle.net/10036/46914.

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Experimental studies presented in this thesis have shown the first realisation of resonant tunnelling transport through two impurities in a vertical double-barrier tunnelling diode; have proved the chiral nature of charge carriers in graphene by studying ballistic transport through graphene $p$-$n$ junctions; have demonstrated significant differences of $1/f$ noise in graphene compared with conventional two-dimensional systems. Magnetic field parallel to the current has been used to investigate resonant tunnelling through a double impurity in a vertical double-barrier resonant tunnelling diode

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Samutpraphoot, Polnop. "Anomalous Hall effect and persistent valley currents in graphene p-n junctions/." Thesis, Massachusetts Institute of Technology, 2014. http://hdl.handle.net/1721.1/92691.

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Thesis: S.B., Massachusetts Institute of Technology, Department of Physics, 2014.<br>Cataloged from PDF version of thesis.<br>Includes bibliographical references (pages 39-40).<br>Dirac particles can exhibit Hall-like transport induced by Berry's gauge field in the absence of magnetic field. We develop a detailed picture of this unusual effect for charge carriers in graphene nanostructures. The Hall effect is nonzero in each valley but is of opposite signs in different valleys, giving rise to charge-neutral valley currents. Our analysis reveals that p-n junctions in graphene support persistent

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Kumar, Chandan. "Quantum transport in Graphene Moire Superlattice and p-n junction." Thesis, 2018. https://etd.iisc.ac.in/handle/2005/5428.

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The discovery of graphene has revolutionized the field of mesoscopic condensed matter physics. It has started a new field of van-der Waals heterostructure in which different two-dimensional materials including graphene can be stacked on top of each other. In the last few years graphene based van-der Walls heterostructure has lead to many interesting physics like Hofstadter’s butterfly, Valley Hall effect, Mott insulator and superconductivity. In this thesis, two different kinds of graphene heterostructures, namely, graphene moiré superlattice (GMSL) and graphene p-n junction (GPNJ) have been s

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Lee, Wei-Chen, and 李威辰. "Sunlight-activated Graphene-heterostructure Transparent Cathodes：Enabling High-performance n-graphene/p-Si Schottky Junction Photovoltaics." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/82319427303022639214.

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碩士<br>國立臺灣大學<br>材料科學與工程學研究所<br>103<br>Graphene, which consists of a single atom-thick layer of carbon, has a lot of attracting properties such as tunable work function, high transparency and high carrier mobility etc. All these properties make graphene be a promising material to replacing widely-used ITO as transparent conducting electrode. However, compared to well-developed graphene-based anodes, fabricating a stable graphene-based cathode is more difficult because n-type dopants for graphene have limited thermal and chemical stabilities and are also sensitive to the influence of ambient env

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Books on the topic "Graphene p-n junction"

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Williams, James Ryan. Electronic transport in graphene: P-n junctions, shot noise, and nanoribbons. 2009.

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Book chapters on the topic "Graphene p-n junction"

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Liu, Cheng-Hua. "Observation of Quantum Hall Plateau-Plateau Transition and Scaling Behavior of the Zeroth Landau Level in Graphene p-n-p Junction." In Springer Theses. Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-13-1355-4_5.

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Mreńca-Kolasińska, Alina, and Bartłomiej Szafran. "Circular n-p Junctions in Graphene Nanoribbons." In Physics of Quantum Rings. Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-95159-1_18.

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Grushevskaya, H. V., G. G. Krylov, S. P. Kruchinin, and B. Vlahovic. "Graphene Quantum Dots, Graphene Non-circular n–p–n-Junctions: Quasi-relativistic Pseudo Wave and Potentials." In NATO Science for Peace and Security Series A: Chemistry and Biology. Springer Netherlands, 2018. http://dx.doi.org/10.1007/978-94-024-1304-5_4.

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Liu, Cheng-Hua. "Distinctive Magnetotransport of Graphene p-n-p Junctions via Resist-Free Fabrication and Controlled Diffusion of Metallic Contact." In Springer Theses. Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-13-1355-4_4.

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Pandya, Ankur, Vishal Sorathiya, and Sunil Lavadiya. "Graphene-Based Nanophotonic Devices." In Recent Advances in Nanophotonics - Fundamentals and Applications. IntechOpen, 2020. http://dx.doi.org/10.5772/intechopen.93853.

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Graphene is an ideal 2D material that breaks the fundamental properties of size and speed limits by photonics and electronics, respectively. Graphene is also an ideal material for bridging electronic and photonic devices. Graphene offers several functions of modulation, emission, signal transmission, and detection of wideband and short band infrared frequency spectrum. Graphene has improved human life in multiple ways of low-cost display devices and touchscreen structures, energy harvesting devices (solar cells), optical communication components (modulator, polarizer, detector, laser generation). There is numerous literature is available on graphene synthesis, properties, devices, and applications. However, the main interest among the scientist, researchers, and students to start with the numerical and computational process for the graphene-based nanophotonic devices. This chapter also includes the examples of graphene applications in optoelectronics devices, P-N junction diodes, photodiode structure which are fundamental devices for the solar cell and the optical modulation.

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Ryzhii, V., M. Ryzhii, M. S. Shur, and V. Mitin. "Negative Terahertz Dynamic Conductivity in Electrically Induced Lateral p-i-n Junction in Graphene *." In Graphene-Based Terahertz Electronics and Plasmonics. Jenny Stanford Publishing, 2020. http://dx.doi.org/10.1201/9780429328398-23.

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"Graphene Materials for Third Generation Solar Cell Technologies." In Materials for Solar Cell Technologies I. Materials Research Forum LLC, 2021. http://dx.doi.org/10.21741/9781644901090-2.

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Photovoltaic technology is the most sustainable source of renewable energy because sunlight radiation is free and readily available. Therefore, the materials required accessing this energy source, cost and the efficiency of conversion from solar to electricity is the topic of interest in continued research. Graphene as a sp2-hybridized 2-dimensional carbon with unique crystal and electronic properties comprising high charge carrier mobility, optical transparency, inexpensive, excellent mechanical strength and flexibility with chemical stability and inertness among others is a suitable material for application in various units of the different architectures in third generation solar cells. It can be applied as a semiconductor layer, electrolyte and counter-electrode in dye-sensitized solar cells; electrode, perovskite, electron and hole transporting layers in perovskite solar cells; and electrode, hole transporting layer and electron acceptor and donor in organic solar cells; in addition to graphene/silicon Schottky junction. Following the application of graphene in various units of the third generation architecture, the power conversion efficiency has increased from 1.9% to over 22%, with ongoing research expected to develop a more stable design with longevity comparable to commercially available silicon-based p-n junction.

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Ryzhii, M., V. Ryzhii, T. Otsuji, V. Mitin, and M. S. Shur. "Electrically-Induced n-i-p Junctions in Multiple Graphene Layer Structures *." In Graphene-Based Terahertz Electronics and Plasmonics. Jenny Stanford Publishing, 2020. http://dx.doi.org/10.1201/9780429328398-4.

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Conference papers on the topic "Graphene p-n junction"

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Moghaddam, Nahid Shayesteh, Mohammad Taghi Ahmadi, Meisam Rahmani, Noraliah Aziziah Amin, Hossein Shayesteh Moghaddam, and Razali Ismail. "Monolayer graphene nanoribbon p-n junction." In 2011 IEEE Regional Symposium on Micro and Nanoelectronics (RSM). IEEE, 2011. http://dx.doi.org/10.1109/rsm.2011.6088336.

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Liu, Jingping, Dayan Ban, Safieddin Safavi-Naeini, and Huichang Zhao. "Terahertz source with graphene p-n junction." In 2015 40th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz). IEEE, 2015. http://dx.doi.org/10.1109/irmmw-thz.2015.7327940.

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Yamakage, A., K. I. Imura, J. Cayssol, and Y. Kuramoto. "Spin-orbit effects in graphene p - n junction." In INTERNATIONAL CONFERENCE OF COMPUTATIONAL METHODS IN SCIENCES AND ENGINEERING 2009: (ICCMSE 2009). AIP, 2012. http://dx.doi.org/10.1063/1.4771832.

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Sajjad, Redwan N., and Avik W. Ghosha. "Tunable transmission Gap in graphene p-n junction." In 2011 International Semiconductor Device Research Symposium (ISDRS). IEEE, 2011. http://dx.doi.org/10.1109/isdrs.2011.6135255.

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Gu, Tingyi, Nick Petrone, Arend van der Zande, et al. "Photocurrent gain in graphene-silicon p-i-n junction." In CLEO: Science and Innovations. OSA, 2015. http://dx.doi.org/10.1364/cleo_si.2015.sw4n.4.

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Shamsir, Samira, Laila Parvin Poly, and Samia Subrina. "Electrostatic analysis of graphene nanoribbon p-n junction diode." In 2015 IEEE International WIE Conference on Electrical and Computer Engineering (WIECON-ECE). IEEE, 2015. http://dx.doi.org/10.1109/wiecon-ece.2015.7444014.

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Gu, Tingyi, Dun Mao, Tiantian Li, and Thomas Kananen. "High Detectivity in CMOS Substrate Powered Graphene p-i-n Junction." In 2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID). IEEE, 2019. http://dx.doi.org/10.1109/rapid.2019.8864431.

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Jung, Minkyung, Peter Rickhaus, Simon Zihlmann, Alexander Eichler, Peter Makk, and Christian Schonenberger. "High-Frequency Nanomechanical Resonator in a Ballistic Graphene p-n Junction." In 2019 Compound Semiconductor Week (CSW). IEEE, 2019. http://dx.doi.org/10.1109/iciprm.2019.8819098.

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Sutar, Surajit, Everett Comfort, and Ji Ung Lee. "Incidence angle-dependent transport across a single graphene p-n junction." In 2011 International Semiconductor Device Research Symposium (ISDRS). IEEE, 2011. http://dx.doi.org/10.1109/isdrs.2011.6135258.

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Pan, Chenyun, and Azad Naeemi. "Device- and system-level performance modeling for graphene P-N junction logic." In 2012 13th International Symposium on Quality Electronic Design (ISQED). IEEE, 2012. http://dx.doi.org/10.1109/isqed.2012.6187504.

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