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Journal articles on the topic 'Graphene-Bilayer and trilayer'

Author: Grafiati

Published: 6 September 2023

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1

Das, Dhiman Kumar, Sushant Kumar Sahoo, Pranati Purohit, and Sukadev Sahoo. "A study on the tensile force and shear strain of trilayer graphene." European Physical Journal Applied Physics 93, no. 3 (March 2021): 30404. http://dx.doi.org/10.1051/epjap/2021200357.

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The study of mechanical properties of graphene is one of the hottest topics in graphene physics. As the number of graphene layers increases, the mechanical property changes. Y. Liu et al., J. Mech. Phys. Solids, 60, 591 (2012) [1] have studied the tensile force and shear strain of bilayer graphene. They observed both the parameters increase as the length increases. In this paper, we study the same parameters for trilayer graphene. In trilayer graphene, we observe that with increasing length of the material, the tensile force increases and shear strain decreases. The change of mechanical behaviour from bilayer to trilayer graphene is a transition which would continue to higher number of layers with potential implications in near future.

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2

Alisultanov, Z. Z. "Large and tunable thermoelectric effect in single layer graphene on bilayer graphene." Modern Physics Letters B 29, no. 03 (January 30, 2015): 1550003. http://dx.doi.org/10.1142/s0217984915500037.

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The conductivity and thermopower of a trilayer graphene based system have been studied within the framework of a simple model. It has been shown that kinks of the conductivity and peaks of the thermopower of the monolayer graphene formed on a tunable bilayer graphene appear near the edges of the band gap of the tunable bilayer graphene.

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3

Iqbal, M. Z., M. F. Khan, M. W. Iqbal, and Jonghwa Eom. "Tuning the electrical properties of exfoliated graphene layers using deep ultraviolet irradiation." J. Mater. Chem. C 2, no. 27 (2014): 5404–10. http://dx.doi.org/10.1039/c4tc00522h.

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Deep ultraviolet irradiation tunes the electronic properties of mechanically exfoliated single-layer graphene, bilayer graphene, and trilayer graphene while maintaining their unique band structure and electrical properties.

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4

Ke, Feng, Yabin Chen, Ketao Yin, Jiejuan Yan, Hengzhong Zhang, Zhenxian Liu, John S. Tse, Junqiao Wu, Ho-kwang Mao, and Bin Chen. "Large bandgap of pressurized trilayer graphene." Proceedings of the National Academy of Sciences 116, no. 19 (April 19, 2019): 9186–90. http://dx.doi.org/10.1073/pnas.1820890116.

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Graphene-based nanodevices have been developed rapidly and are now considered a strong contender for postsilicon electronics. However, one challenge facing graphene-based transistors is opening a sizable bandgap in graphene. The largest bandgap achieved so far is several hundred meV in bilayer graphene, but this value is still far below the threshold for practical applications. Through in situ electrical measurements, we observed a semiconducting character in compressed trilayer graphene by tuning the interlayer interaction with pressure. The optical absorption measurements demonstrate that an intrinsic bandgap of 2.5 ± 0.3 eV could be achieved in such a semiconducting state, and once opened could be preserved to a few GPa. The realization of wide bandgap in compressed trilayer graphene offers opportunities in carbon-based electronic devices.

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5

Do, Thi-Nga, Cheng-Peng Chang, Po-Hsin Shih, Jhao-Ying Wu, and Ming-Fa Lin. "Stacking-enriched magneto-transport properties of few-layer graphenes." Physical Chemistry Chemical Physics 19, no. 43 (2017): 29525–33. http://dx.doi.org/10.1039/c7cp05614a.

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6

Cobaleda, C., F. Rossella, S. Pezzini, E. Diez, V. Bellani, D. K. Maude, and P. Blake. "Quantum Hall effect in bilayer and trilayer graphene." physica status solidi (c) 9, no. 6 (March 15, 2012): 1411–14. http://dx.doi.org/10.1002/pssc.201100657.

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7

Chen, Xu-Dong, Wei Xin, Wen-Shuai Jiang, Zhi-Bo Liu, Yongsheng Chen, and Jian-Guo Tian. "High-Precision Twist-Controlled Bilayer and Trilayer Graphene." Advanced Materials 28, no. 13 (January 29, 2016): 2563–70. http://dx.doi.org/10.1002/adma.201505129.

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8

Yuan, Jianhui, and K. M. Liew. "Internal friction characteristic and analysis of in-plane natural frequency of trilayer complexes formed from graphenes and boron nitride nanosheets." RSC Adv. 4, no. 85 (2014): 45425–32. http://dx.doi.org/10.1039/c4ra08926j.

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The internal friction and in-plane natural frequency of a trilayer complex formed by a monolayer graphene sandwiched in the bilayer of boron nitride nanosheets (BN/G/BN) and graphenes (G/G/G) are studied by using molecular dynamics.

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9

Zhan, Da, Jia Xu Yan, Zhen Hua Ni, Li Sun, Lin Fei Lai, Lei Liu, Xiang Yang Liu, and Ze Xiang Shen. "Bandgap-Opened Bilayer Graphene Approached by Asymmetrical Intercalation of Trilayer Graphene." Small 11, no. 9-10 (December 2, 2014): 1177–82. http://dx.doi.org/10.1002/smll.201402728.

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10

SADEGHI, HATEF, M. T. AHMADI, S. M. MOUSAVI, RAZALI ISMAIL, and MAHDIAR H. GHADIRY. "CHANNEL CONDUCTANCE OF ABA STACKING TRILAYER GRAPHENE NANORIBBON FIELD-EFFECT TRANSISTOR." Modern Physics Letters B 26, no. 08 (March 30, 2012): 1250047. http://dx.doi.org/10.1142/s0217984912500479.

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In this paper, our focus is on ABA trilayer graphene nanoribbon (TGN), in which the middle layer is horizontally shifted from the top and bottom layers. The conductance model of TGN as a FET channel is presented based on Landauer formula. Besides the good reported agreement with experimental study lending support to our model, the presented model demonstrates that minimum conductivity increases dramatically by temperature. It also draws parallels between TGN and bilayer graphene nanoribbon, in which similar thermal behavior is observed. Maxwell–Boltzmann approximation is employed to form the conductance of TGN near the neutrality point. Analytical model in degenerate regime in comparison with reported data proves that TGN-based transistor will operate in degenerate regime like what we expect in conventional semiconductors. Moreover, our model confirms that in similar condition, the conductivity of TGN is less than bilayer graphene nanoribbon as reported in some experiments.

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11

Wang, Mei-Juan, Jun Wang, and Jun-Feng Liu. "Possible quantized charge pump in bilayer and trilayer graphene." New Journal of Physics 22, no. 1 (January 23, 2020): 013042. http://dx.doi.org/10.1088/1367-2630/ab69b6.

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12

Cobaleda, C., E. Diez, M. Amado, S. Pezzini, F. Rossella, V. Bellani, D. López-Romero, and D. K. Maude. "Quantum Hall effect in monolayer, bilayer and trilayer graphene." Journal of Physics: Conference Series 456 (August 5, 2013): 012006. http://dx.doi.org/10.1088/1742-6596/456/1/012006.

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13

Ding, Kai-He, Zhen-Gang Zhu, and Jamal Berakdar. "Localized magnetic states in biased bilayer and trilayer graphene." Journal of Physics: Condensed Matter 21, no. 18 (March 31, 2009): 182002. http://dx.doi.org/10.1088/0953-8984/21/18/182002.

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14

de Oliveira, César R., and Vinícius L. Rocha. "Dirac cones for graph models of multilayer AA-stacked graphene sheets." Zeitschrift für Naturforschung A 76, no. 4 (February 15, 2021): 371–84. http://dx.doi.org/10.1515/zna-2020-0330.

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Abstract We propose an extension, of a quantum graph model for a single sheet of graphene, to multilayer AA-stacked graphene and also to a model of the bulk graphite. Spectra and Dirac cones are explicitly characterized for bilayer and trilayer graphene, as well as for graphite. For weak layer interaction (as proposed in the text), simple perturbation arguments also cover any number of layers and it mathematically recovers basic cone existences from the theoretical and experimental physics literature; its main strength is its simplicity.

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15

Politano, Grazia Giuseppina, and Carlo Versace. "Variable-Angle Spectroscopic Ellipsometry of Graphene-Based Films." Coatings 11, no. 4 (April 16, 2021): 462. http://dx.doi.org/10.3390/coatings11040462.

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A review of the authors’ research works on Variable-Angle Spectroscopy (VASE) of graphene-based films is presented. The interaction of graphene oxide (GO) with magnetron-sputtered metals is a promising research area. VASE optical models of GO thin films deposited on magnetron-sputtered titanium (Ti), silver (Ag) and gold (Au) are discussed. Moreover, the optical properties of graphene nanoplatelet (GNPS) films and reduced graphene oxide (RGO) stabilized with Poly(Sodium 4-Styrenesulfonate) (PSS) films, which are less studied graphene-related materials, are shown. Finally, different optical behaviors of chemical vapor deposition (CVD)-grown monolayer, bilayer, and trilayer graphene films on silicon and polyethylene terephthalate (PET) substrates are recapitulated.

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16

Sadeghi, Hatef, Daniel T. H. Lai, Jean-Michel Redoute, and Aladin Zayegh. "Classic and Quantum Capacitances in Bernal Bilayer and Trilayer Graphene Field Effect Transistor." Journal of Nanomaterials 2013 (2013): 1–7. http://dx.doi.org/10.1155/2013/127690.

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Our focus in this study is on characterizing the capacitance voltage (C-V) behavior of Bernal stacking bilayer graphene (BG) and trilayer graphene (TG) as the channel of FET devices. The analytical models of quantum capacitance (QC) of BG and TG are presented. Although QC is smaller than the classic capacitance in conventional devices, its contribution to the total metal oxide semiconductor capacitor in graphene-based FET devices becomes significant in the nanoscale. Our calculation shows that QC increases with gate voltage in both BG and TG and decreases with temperature with some fluctuations. However, in bilayer graphene the fluctuation is higher due to its tunable band structure with external electric fields. In similar temperature and size, QC in metal oxide BG is higher than metal oxide TG configuration. Moreover, in both BG and TG, total capacitance is more affected by classic capacitance as the distance between gate electrode and channel increases. However, QC is more dominant when the channel becomes thinner into the nanoscale, and therefore we mostly deal with quantum capacitance in top gate in contrast with bottom gate that the classic capacitance is dominant.

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17

Tomić Luketić, Kristina, Juraj Hanžek, Catalina G. Mihalcea, Pavo Dubček, Andreja Gajović, Zdravko Siketić, Milko Jakšić, Corneliu Ghica, and Marko Karlušić. "Charge State Effects in Swift-Heavy-Ion-Irradiated Nanomaterials." Crystals 12, no. 6 (June 19, 2022): 865. http://dx.doi.org/10.3390/cryst12060865.

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The aim of this experimental work was to investigate the influence of the ion beam charge state on damage production in nanomaterials. To achieve this, we employed Raman spectroscopy, atomic force microscopy, and transmission electron microscopy to investigate nanomaterials irradiated by a 23 MeV I beam. We found a significant influence of the ion charge state on damage production in monolayer graphene, but found no evidence of this effect in bilayer and trilayer graphene, nor in graphite. Furthermore, we found no evidence of this effect in CaF2 and SiO2 nanocrystals irradiated with the same ion beam.

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18

Zhang, Yanna, Xiao-Li Lu, Yongjin Jiang, Botao Teng, and Jun-Qiang Lu. "Structural and Magnetic Instability of Bilayer and Trilayer Zigzag Graphene Nanoribbons." Journal of Computational and Theoretical Nanoscience 8, no. 12 (December 1, 2011): 2448–53. http://dx.doi.org/10.1166/jctn.2011.1977.

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19

Kazemi, Asieh S., Simon Crampin, and Adelina Ilie. "Stacking-dependent superstructures at stepped armchair interfaces of bilayer/trilayer graphene." Applied Physics Letters 102, no. 16 (April 22, 2013): 163111. http://dx.doi.org/10.1063/1.4802796.

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20

Xu, Dongwei, Haiwen Liu, Vincent Sacksteder IV, Juntao Song, Hua Jiang, Qing-feng Sun, and X. C. Xie. "A disorder induced field effect transistor in bilayer and trilayer graphene." Journal of Physics: Condensed Matter 25, no. 10 (February 14, 2013): 105303. http://dx.doi.org/10.1088/0953-8984/25/10/105303.

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21

Iveković, Damjan, Sunil Kumar, Andrea Gajović, Tihana Čižmar, and Marko Karlušić. "Response of Bilayer and Trilayer Graphene to High-Energy Heavy Ion Irradiation." Materials 16, no. 4 (February 4, 2023): 1332. http://dx.doi.org/10.3390/ma16041332.

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High-energy heavy ion irradiation is a very useful tool for the nanostructuring of 2D materials because defects can be introduced in a controlled way. This approach is especially attractive for the mass production of graphene nanomembranes when nanopore size and density can easily be tuned by ion irradiation parameters such as ion energy and applied fluence. Therefore, understanding the basic mechanisms in nanopore formation due to high-energy heavy ion impact is of the highest importance. In the present work, we used Raman spectroscopy to investigate the response of bilayer and trilayer graphene to this type of irradiation. Spectra obtained from graphene samples irradiated with 1.8 MeV I, 23 MeV I, 3 MeV Cu, 18 MeV Cu, and 12 MeV Si beams were analysed using the Lucchese model. It was found that the efficiency of damage production scales strongly with nuclear energy loss. Therefore, even for the most energetic 23 MeV I beam, the electronic energy loss does not contribute much to damage formation and ion tracks are unlikely to be formed.

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22

Yelgel, Celal, and Gyaneshwar P. Srivastava. "Atomic and Electronic Structure of Multilayer Graphene on a Monolayer Hexagonal Boron Nitride." MRS Proceedings 1549 (2013): 65–70. http://dx.doi.org/10.1557/opl.2013.710.

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ABSTRACTThe atomic and electronic structures of multilayer graphene on a monolayer boron nitride (MLBN) have been investigated by using the pseudopotential method and the local density approximation (LDA) of the density functional theory (DFT). We show that the LDA energy band gap can be tuned in the range 41-278 meV for a multilayer graphene by using MLBN as a substrate. The dispersion of the π/π* bands slightly away from the K point is linear with the electron speed of 0.9×106 and 0.93×106 for graphene (MLG)/MLBN and ABA trilayer graphene (TLG)/MLBN systems, respectively. This behaviour becomes quadratic with a relative effective mass of 0.0021 for the bilayer graphene (BLG)/MLBN system. The calculated binding energies are in the range of 10-43 meV per C atom.

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23

Myers, Nathan M., Francisco J. Peña, Natalia Cortés, and Patricio Vargas. "Multilayer Graphene as an Endoreversible Otto Engine." Nanomaterials 13, no. 9 (May 5, 2023): 1548. http://dx.doi.org/10.3390/nano13091548.

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We examine the performance of a finite-time, endoreversible Otto heat engine with a working medium of monolayer or multilayered graphene subjected to an external magnetic field. As the energy spectrum of multilayer graphene under an external magnetic field depends strongly on the number of layers, so too does its thermodynamic behavior. We show that this leads to a simple relationship between the engine efficiency and the number of layers of graphene in the working medium. Furthermore, we find that the efficiency at maximum power for bilayer and trilayer working mediums can exceed that of a classical endoreversible Otto cycle. Conversely, a working medium of monolayer graphene displays identical efficiency at maximum power to a classical working medium. These results demonstrate that layered graphene can be a useful material for the construction of efficient thermal machines for diverse quantum device applications.

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24

Ezawa, Motohiko. "Supersymmetry and unconventional quantum Hall effect in monolayer, bilayer and trilayer graphene." Physica E: Low-dimensional Systems and Nanostructures 40, no. 2 (December 2007): 269–72. http://dx.doi.org/10.1016/j.physe.2007.06.038.

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25

Elder, Robert M., Mahesh R. Neupane, and Tanya L. Chantawansri. "Stacking order dependent mechanical properties of graphene/MoS2 bilayer and trilayer heterostructures." Applied Physics Letters 107, no. 7 (August 17, 2015): 073101. http://dx.doi.org/10.1063/1.4928752.

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26

Kitajima, Masahiro, Ikufumi Katayama, Ørjan Sele Handegård, Tadaaki Nagao, Shohei Chiashi, Shigeo Maruyama, and Jun Takeda. "Fano resonance of optical phonons in a multilayer graphene stack." Japanese Journal of Applied Physics 60, no. 12 (November 30, 2021): 122006. http://dx.doi.org/10.35848/1347-4065/ac2c29.

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Abstract We studied Fano interference between the Raman spectrum of G-band phonons and electron continuum in a multilayer graphene stack. The thickness and power dependencies of the Fano interference coefficient ∣1/q∣ in the G-mode, where q is the Fano asymmetry parameter, were spatially visualized and analyzed using the Gaussian-convoluted Breit–Wigner–Fano function. The estimated ∣1/q∣ decreases with an increase in the layer number and laser power in the low-power region at least for monolayer, bilayer, and trilayer graphene. In the higher-power region, ∣1/q∣ increases with power only for monolayer graphene. The observed behaviors of ∣1/q∣ reflect the phase difference of Raman signals from the electron continuum and G-band and possibly originate from changes in the electronic relaxation time and the Fermi level of graphene owing to the laser heating of the sample.

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27

Seo, Yuta, Satoru Masubuchi, Momoko Onodera, Yijin Zhang, Rai Moriya, Kenji Watanabe, Takashi Taniguchi, and Tomoki Machida. "Subband-resolved momentum-conserved resonant tunneling in monolayer graphene/h-BN/ABA-trilayer graphene small-twist-angle tunneling device." Applied Physics Letters 120, no. 8 (February 21, 2022): 083102. http://dx.doi.org/10.1063/5.0080215.

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We demonstrate twist-controlled resonant tunneling in a monolayer graphene (MLG)/hexagonal boron nitride ( h-BN)/ABA-stacked trilayer graphene (TLG) van der Waals (vdW) junction, in which MLG and TLG flakes are aligned with a small twist angle θ of ∼1.05° between their crystallographic orientations through a thin h-BN barrier. Owing to the small interlayer twist, resonant tunneling attributed to the conservation of momentum and energy was observed between the single linear band of MLG and multiple subbands of TLG. We show that different subbands of TLG—bilayer-graphene-like subbands and a MLG-like subband—exhibit distinctly different resonant tunneling behaviors. Therefore, we demonstrate subband-resolved resonant tunneling. This technique provides a method to determine band parameters (Slonczewski–Weiss–McClure parameters) and probes the band dispersion of different two-dimensional materials by utilizing a MLG electrode.

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28

Umar, Mustapha, Chidera C. Nnadiekwe, Muhammad Haroon, Ismail Abdulazeez, Khalid Alhooshani, Abdulaziz A. Al-Saadi, and Qing Peng. "A First-Principles Study on the Multilayer Graphene Nanosheets Anode Performance for Boron-Ion Battery." Nanomaterials 12, no. 8 (April 9, 2022): 1280. http://dx.doi.org/10.3390/nano12081280.

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Advanced battery materials are urgently desirable to meet the rapidly growing demand for portable electronics and power. The development of a high-energy-density anode is essential for the practical application of B3+ batteries as an alternative to Li-ion batteries. Herein, we have investigated the performance of B3+ on monolayer (MG), bilayer (BG), trilayer (TG), and tetralayer (TTG) graphene sheets using first-principles calculations. The findings reveal significant stabilization of the HOMO and the LUMO frontier orbitals of the graphene sheets upon adsorption of B3+ by shifting the energies from −5.085 and −2.242 eV in MG to −20.08 and −19.84 eV in 2B3+@TTG. Similarly, increasing the layers to tetralayer graphitic carbon B3+@TTG_asym and B3+@TTG_sym produced the most favorable and deeper van der Waals interactions. The cell voltages obtained were considerably enhanced, and B3+/B@TTG showed the highest cell voltage of 16.5 V. Our results suggest a novel avenue to engineer graphene anode performance by increasing the number of graphene layers.

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29

Politano, Grazia Giuseppina, Carlo Vena, Giovanni Desiderio, and Carlo Versace. "Variable angle spectroscopic ellipsometry characterization of turbostratic CVD-grown bilayer and trilayer graphene." Optical Materials 107 (September 2020): 110165. http://dx.doi.org/10.1016/j.optmat.2020.110165.

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30

Wang, Jin, Yang, Zong, and Peng. "Graphene Adhesion Mechanics on Iron Substrates: Insight from Molecular Dynamic Simulations." Crystals 9, no. 11 (November 6, 2019): 579. http://dx.doi.org/10.3390/cryst9110579.

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The adhesion feature of graphene on metal substrates is important in graphene synthesis, transfer and applications, as well as for graphene-reinforced metal matrix composites. We investigate the adhesion energy of graphene nanosheets (GNs) on iron substrate using molecular dynamic (MD) simulations. Two Fe–C potentials are examined as Lennard–Jones (LJ) pair potential and embedded-atom method (EAM) potential. For LJ potential, the adhesion energies of monolayer GN are 0.47, 0.62, 0.70 and 0.74 J/m2 on the iron {110}, {111}, {112} and {100} surfaces, respectively, compared to the values of 26.83, 24.87, 25.13 and 25.01 J/m2 from EAM potential. When the number of GN layers increases from one to three, the adhesion energy from EAM potential increases. Such a trend is not captured by LJ potential. The iron {110} surface is the most adhesive surface for monolayer, bilayer and trilayer GNs from EAM potential. The results suggest that the LJ potential describes a weak bond of Fe–C, opposed to a hybrid chemical and strong bond from EAM potential. The average vertical distances between monolayer GN and four iron surfaces are 2.0–2.2 Å from LJ potential and 1.3–1.4 Å from EAM potential. These separations are nearly unchanged with an increasing number of layers. The ABA-stacked GN is likely to form on lower-index {110} and {100} surfaces, while the ABC-stacked GN is preferred on higher-index {111} surface. Our insights of the graphene adhesion mechanics might be beneficial in graphene growing, surface engineering and enhancement of iron using graphene sheets.

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31

Dong, H. M., L. S. Huang, J. L. Liu, F. Huang, and C. X. Zhao. "Layer-dependent optoelectronic properties of black phosphorus." International Journal of Modern Physics C 31, no. 12 (October 23, 2020): 2050177. http://dx.doi.org/10.1142/s0129183120501776.

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The layer-dependent optoelectronic properties of monolayer, bilayer and trilayer black phosphorus (BP) are studied by using the first-principles calculations based on density functional theory (DFT). The valence band splits and the density of states (DOS) in the conduction band obviously shift to the Fermi surface with the increased layer number. The atomic p orbital of BP plays an decisive role in determining the electronic and optical properties, which are drastically different from those of graphene and transition metal dichalogenides (TMDs). The increase of the layer number leads to the metal characteristics. The extinction coefficient and photoconductivity show strong optical responses to the ultraviolet (UV) light, which further increase with the number of layers. BP layers can reflect UV rays effectively because of their metallic properties in the UV energy range. Our study shows that the interlayer interaction can intensely change the electronic and optical properties of BP.

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32

Huang, Ming, Pavel V. Bakharev, Zhu-Jun Wang, Mandakini Biswal, Zheng Yang, Sunghwan Jin, Bin Wang, et al. "Large-area single-crystal AB-bilayer and ABA-trilayer graphene grown on a Cu/Ni(111) foil." Nature Nanotechnology 15, no. 4 (January 20, 2020): 289–95. http://dx.doi.org/10.1038/s41565-019-0622-8.

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33

Shtepliuk, Ivan, and Rositsa Yakimova. "Interband Absorption in Few-Layer Graphene Quantum Dots: Effect of Heavy Metals." Materials 11, no. 7 (July 16, 2018): 1217. http://dx.doi.org/10.3390/ma11071217.

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Monolayer, bilayer, and trilayer graphene quantum dots (GQDs) with different binding abilities to elemental heavy metals (HMs: Cd, Hg, and Pb) were designed, and their electronic and optical properties were investigated theoretically to understand deeply the optical response under heavy metal exposure. To gain insight into the nature of interband absorption, we performed density functional theory (DFT) and time-dependent density functional theory (TD-DFT) calculations for thickness-varying GQDs. We found that the interband absorption in GQDs can be efficiently tuned by controlling the thickness of GQDs to attain the desirable coloration of the interacting complex. We also show that the strength of the interaction between GQDs and Cd, Hg, and Pb is strongly dependent on the number of sp2-bonded layers. The results suggest that the thickness of GQDs plays an important role in governing the hybridization between locally-excited (LE) and charge-transfer (CT) states of the GQDs. Based on the partial density-of-states (DOS) analysis and in-depth knowledge of excited states, the mechanisms underlying the interband absorption are discussed. This study suggests that GQDs would show an improved sensing performance in the selective colorimetric detection of lead by the thickness control.

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34

McQuade, Gregor A., Annette S. Plaut, Alan Usher, and Jens Martin. "The thermal expansion coefficient of monolayer, bilayer, and trilayer graphene derived from the strain induced by cooling to cryogenic temperatures." Applied Physics Letters 118, no. 20 (May 17, 2021): 203101. http://dx.doi.org/10.1063/5.0035391.

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35

Guerrero-Avilés, Raúl, Marta Pelc, Fabian Rudolf Geisenhof, Ralf Thomas Weitz, and Andrés Ayuela. "Rhombohedral trilayer graphene being more stable than its Bernal counterpart." Nanoscale, 2022. http://dx.doi.org/10.1039/d2nr01985j.

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36

Yuan, Shengjun, Hans De Raedt, and Mikhail I. Katsnelson. "Electronic transport in disordered bilayer and trilayer graphene." Physical Review B 82, no. 23 (December 6, 2010). http://dx.doi.org/10.1103/physrevb.82.235409.

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37

Ding, Dongdong, Ruirui Niu, Xiangyan Han, Zhuangzhuang Qu, Zhiyu Wang, Zhuoxian Li, Qianling Liu, Chunrui Han, and Jianming Lu. "Tunable correlation in twisted monolayer-trilayer graphene." Chinese Physics B, March 30, 2023. http://dx.doi.org/10.1088/1674-1056/acc8c3.

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Abstract Flat-band physics of Moiré superlattices, originally discovered in the celebrated twisted bilayer graphene, have recently been intensively explored in multilayer graphene systems that can be further controlled by electric field. In this work, we experimentally find the evidence of correlated insulators at half filling of the electron moiré band of twisted monolayer-trilayer graphene with a twist angle around 1.2 degrees. Van Hove singularity (VHS), manifested as enhanced resistance and zero Hall voltage, is observed to be distinct in conduction and valence flat bands. It also depends on the direction and magnitude of displacement fields, consistent with the asymmetric crystal structure. While the resistance ridges at VHS can be enhanced by magnetic fields, when they cross commensurate fillings of the moiré superlattice in the conduction band, the enhancement is so strong that signatures of correlated insulator appear, which may further develop into an energy gap depending on the correlation strength. At last, Fermi velocity derived from temperature coefficients of resistivity is compared between conduction and valence bands with different displacement fields. It is found that electronic correlation has a negative dependence on Fermi velocity, which in turn could be used to quantify the correlation strength.

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38

Chichinadze, Dmitry V., Laura Classen, Yuxuan Wang, and Andrey V. Chubukov. "Cascade of transitions in twisted and non-twisted graphene layers within the van Hove scenario." npj Quantum Materials 7, no. 1 (December 6, 2022). http://dx.doi.org/10.1038/s41535-022-00520-z.

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AbstractMotivated by measurements of compressibility and STM spectra in twisted bilayer graphene, we analyze the pattern of symmetry breaking for itinerant fermions near a van Hove singularity. Making use of an approximate SU(4) symmetry of the Landau functional, we show that the structure of the spin/isospin order parameter changes with increasing filling via a cascade of transitions. We compute the feedback from different spin/isospin orders on fermions and argue that each order splits the initially 4-fold degenerate van Hove peak in a particular fashion, consistent with the STM data and compressibility measurements, providing a unified interpretation of the cascade of transitions in twisted bilayer graphene. Our results follow from a generic analysis of an SU(4)-symmetric Landau functional and are valid beyond a specific underlying fermionic model. We argue that an analogous van Hove scenario explains the cascade of phase transitions in non-twisted Bernal bilayer and rhombohedral trilayer graphene.

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39

Zhen Zhan, Yalei Zhang, and Shengjun Yuan. "Lattice relaxation and substrate effects on the electronic properties of graphene superlattice." Acta Physica Sinica, 2022, 0. http://dx.doi.org/10.7498/aps.71.20220872.

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When two two-dimensional (2D) materials with different lattice constants or with different rotation angles are stacked on top of another, a moiré superlattice can be constructed. The electronic properties of the superlattice are strongly dependent on the stacking configurations, twist angles and substrates. For instance, theoretically, when the rotation angle of twisted bilayer graphene is reduced to a set of specific values, the so-called magic angles, flat bands appear near the charge neutrality, and the electron-electron interaction is significantly enhanced. The Mott insulator and unconventional superconductivity are detected in the twisted bilayer graphene with twist angle around 1.1°. For a moiré pattern with a large enough periodicity, lattice relaxation caused by an interplay between van der Waals forces and the in-plane elasticity forces happens. The atomic relaxation forces atoms to deviate from their equilibrium positions and make the system reconstructed. In this review, we mainly focus on the effect of the lattice relaxation and substrates on the electronic properties of the graphene superlattices. From both theoretical and experimental points of view, the lattice relaxation effect on the atomic structures and electronic properties of graphene-based superlattices, for example, the twisted bilayer graphene, twisted trilayer graphene, graphene-hexagonal boron nitride superlattice and twisted bilayer graphene-boron nitride superlattice are discussed. Finally, a summary and perspective of the investigation of the 2D materials superlattice are presented.

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40

Zhu, yujian, Yiwei Chen, Qingxin Li, Yongdao Chen, Yan Huang, Wang Zhu, Dongdong An, et al. "Tunable multi-bands in twisted double bilayer graphene." 2D Materials, April 24, 2022. http://dx.doi.org/10.1088/2053-1583/ac69bb.

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Abstract The bandstructure of a material, playing an important role in its electron transport property, is usually governed by the lattice configuration. Materials with a field-effect tunable band, such as bilayer and rhombohedral trilayer graphene, are more flexible for electronic applications. Here, on dual-gated twisted double bilayer graphene (TDBG) samples with small twist angle around 1°, we observe vertical electric-field-tunable bandstructures at multiple moiré fillings positions with bandgap values continuously varying from zero to tens of mili-electron volts. Moreover, within the first moiré filling on both electron and hole sides, the carrier transport deviates from Fermi liquid behaviour, with measured resistivity exhibiting linear temperature dependence between 1.5 K and 50 K. Furthermore, under a vertical magnetic field, the coupling between the two bilayer graphene layers can also be turned on and off by the displacement field. Our results suggest TDBG with small twist angle is a platform for studying the electrostatic field tunable multiple moiré bands evolution and the resulting emergent correlated electronic states.

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41

Zhou, Zhang, Kenji Watanabe, Takashi Taniguchi, Xiao Lin, Jinhai Mao, and Hong-Jun Gao. "Emergence of correlations in twisted monolayer-trilayer graphene heterostructures." Chinese Physics B, July 3, 2023. http://dx.doi.org/10.1088/1674-1056/ace3a8.

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Abstract Twisted bilayer graphene heterostructures have recently emerged as a well-established platform for studying strongly correlated phases, such as correlated insulating, superconducting, and topologic states. Extending this notion to twisted multilayer graphene heterostructures has exhibited more diverse fruitful correlated phases, as some fundamental properties related to symmetry and band structures are correspondingly modified. Here we report the observations of correlated states in twisted monolayer-trilayer (Bernal stacked) graphene heterostructures. Correlated phases at integer fillings of the moiré unit cell are revealed at a high displacement field and stabilized with a moderate magnetic field on the electron-doping side at a twist angle of 1.45º, where the lift of degeneracy at the integer fillings is observed in the Landau fan diagram. Our results demonstrate the effectiveness of moiré engineering in an extended structure and provide insights into electric-field tunable correlated phases.

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42

Zheng, Jiaxin, Yangyang Wang, Lu Wang, Ruge Quhe, Zeyuan Ni, Wai-Ning Mei, Zhengxiang Gao, Dapeng Yu, Junjie Shi, and Jing Lu. "Interfacial Properties of Bilayer and Trilayer Graphene on Metal Substrates." Scientific Reports 3, no. 1 (June 27, 2013). http://dx.doi.org/10.1038/srep02081.

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43

Ghamsari, Behnood G., Jacob Tosado, Mahito Yamamoto, Michael S. Fuhrer, and Steven M. Anlage. "Measuring the Complex Optical Conductivity of Graphene by Fabry-Pérot Reflectance Spectroscopy." Scientific Reports 6, no. 1 (September 29, 2016). http://dx.doi.org/10.1038/srep34166.

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Abstract We have experimentally studied the dispersion of optical conductivity in few-layer graphene through reflection spectroscopy at visible wavelengths. A laser scanning microscope (LSM) with a supercontinuum laser source measured the frequency dependence of the reflectance of exfoliated graphene flakes, including monolayer, bilayer and trilayer graphene, loaded on a Si/SiO2 Fabry-Pérot resonator in the 545–700 nm range. The complex refractive index of few-layer graphene, n − ik, was extracted from the reflectance contrast to the bare substrate. It was found that each few-layer graphene possesses a unique dispersionless optical index. This feature indicates that the optical conductivity does not simply scale with the number of layers, and that inter-layer electrodynamics are significant at visible energies.

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44

Avishai, Y., and Y. B. Band. "Graphene bilayer and trilayer moiré lattice with Rashba spin-orbit coupling." Physical Review B 106, no. 4 (July 26, 2022). http://dx.doi.org/10.1103/physrevb.106.l041406.

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45

Hosseini, Mir Vahid, and Malek Zareyan. "Unconventional superconducting states of interlayer pairing in bilayer and trilayer graphene." Physical Review B 86, no. 21 (December 6, 2012). http://dx.doi.org/10.1103/physrevb.86.214503.

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46

Pantaleón, Pierre A., Alejandro Jimeno-Pozo, Héctor Sainz-Cruz, Võ Tiến Phong, Tommaso Cea, and Francisco Guinea. "Superconductivity and correlated phases in non-twisted bilayer and trilayer graphene." Nature Reviews Physics, April 13, 2023. http://dx.doi.org/10.1038/s42254-023-00575-2.

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47

Yuan, Noah F. Q., Hiroki Isobe, and Liang Fu. "Magic of high-order van Hove singularity." Nature Communications 10, no. 1 (December 2019). http://dx.doi.org/10.1038/s41467-019-13670-9.

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AbstractThe van Hove singularity in density of states generally exists in periodic systems due to the presence of saddle points of energy dispersion in momentum space. We introduce a new type of van Hove singularity in two dimensions, resulting from high-order saddle points and exhibiting power-law divergent density of states. We show that high-order van Hove singularity can be generally achieved by tuning the band structure with a single parameter in moiré superlattices, such as twisted bilayer graphene by tuning twist angle or applying pressure, and trilayer graphene by applying vertical electric field. Correlation effects from high-order van Hove singularity near Fermi level are also discussed.

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48

Morimoto, Takahiro, Mikito Koshino, and Hideo Aoki. "Faraday rotation in bilayer and trilayer graphene in the quantum Hall regime." Physical Review B 86, no. 15 (October 15, 2012). http://dx.doi.org/10.1103/physrevb.86.155426.

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49

Zhu, Wenjuan, Vasili Perebeinos, Marcus Freitag, and Phaedon Avouris. "Carrier scattering, mobilities, and electrostatic potential in monolayer, bilayer, and trilayer graphene." Physical Review B 80, no. 23 (December 2, 2009). http://dx.doi.org/10.1103/physrevb.80.235402.

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50

Guinea, Francisco. "Local probes and superconductivity in magic angle twisted bilayer and trilayer graphene." Journal Club for Condensed Matter Physics, April 30, 2023. http://dx.doi.org/10.36471/jccm_april_2023_01.

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