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Journal articles on the topic 'Giant Magnetoresistance and Hall effect'

Author: Grafiati

Published: 25 May 2024

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1

Huang, Hui, Juanjuan Gu, Ping Ji, Qinglong Wang, Xueyou Hu, Yongliang Qin, Jingrong Wang, and Changjin Zhang. "Giant anisotropic magnetoresistance and planar Hall effect in Sr0.06Bi2Se3." Applied Physics Letters 113, no. 22 (November 26, 2018): 222601. http://dx.doi.org/10.1063/1.5063689.

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2

Budantsev, M. V., A. G. Pogosov, A. E. Plotnikov, A. K. Bakarov, A. I. Toropov, and J. C. Portal. "Giant hysteresis of magnetoresistance in the quantum hall effect regime." JETP Letters 86, no. 4 (October 2007): 264–67. http://dx.doi.org/10.1134/s0021364007160102.

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3

Núñez-Regueiro, J. E., D. Gupta, and A. M. Kadin. "Hall effect and giant magnetoresistance in lanthanum manganite thin films." Journal of Applied Physics 79, no. 8 (1996): 5179. http://dx.doi.org/10.1063/1.361331.

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4

Wang, Silin, and Junji Gao. "Overview of Magnetic Field Sensor." Journal of Physics: Conference Series 2613, no. 1 (October 1, 2023): 012012. http://dx.doi.org/10.1088/1742-6596/2613/1/012012.

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Abstract This article summarizes the commonly used in magnetic sensors Hall sensors, Anisotropic magnetoresistive sensor (AMR), Giant magnetoresistance effect sensor (GMR) and Tunneling magnetoresistance sensor (TMR). The structure and working principle of each sensor are introduced. In addition, some error sources of magnetic sensors and the calibration techniques used are introduced, and some typical application examples of each sensor are introduced.

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5

Bobin, S. B., and A. T. Lonchakov. "Giant Planar Hall Effect in an Ultra-Pure Mercury Selenide Single Crystal Sample." JETP Letters 118, no. 7 (October 2023): 495–501. http://dx.doi.org/10.1134/s0021364023602658.

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A giant planar Hall effect with an amplitude of about 50 mΩ cm at a temperature of T = 80 K in a magnetic field of 10 T has been detected in an ultra-pure HgSe single crystal sample with an electron density of 5.5 × 1015 cm–3. Its oscillating dependence on the rotation angle of the sample in various magnetic fields has been determined. Attributes (oscillation period, positions of extrema, correlation between the amplitudes of planar Hall and planar longitudinal magnetoresistance) indicate that the planar Hall effect in this nonmagnetic gapless semimetal with an isotropic Fermi surface originates from the chiral anomaly. This is a solid argument for the topological nature of the electronic spectrum of HgSe.

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6

Samoilov, A. V., G. Beach, C. C. Fu, N. C. Yeh, and R. P. Vasquez. "Giant spontaneous Hall effect and magnetoresistance in La1−xCaxCoO3 (0.1⩽x⩽0.5)." Journal of Applied Physics 83, no. 11 (June 1998): 6998–7000. http://dx.doi.org/10.1063/1.367623.

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7

Xiong, Peng, Gang Xiao, J. Q. Wang, John Q. Xiao, J. Samuel Jiang, and C. L. Chien. "Extraordinary Hall effect and giant magnetoresistance in the granular Co-Ag system." Physical Review Letters 69, no. 22 (November 30, 1992): 3220–23. http://dx.doi.org/10.1103/physrevlett.69.3220.

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8

Zhang, H., X. Y. Zhu, Y. Xu, D. J. Gawryluk, W. Xie, S. L. Ju, M. Shi, et al. "Giant magnetoresistance and topological Hall effect in the EuGa₄ antiferromagnet." Journal of Physics: Condensed Matter 34, no. 3 (November 3, 2021): 034005. http://dx.doi.org/10.1088/1361-648x/ac3102.

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Abstract We report on systematic temperature- and magnetic field-dependent studies of the EuGa4 binary compound, which crystallizes in a centrosymmetric tetragonal BaAl4-type structure with space group I4/mmm. The electronic properties of EuGa4 single crystals, with an antiferromagnetic (AFM) transition at T N ∼ 16.4 K, were characterized via electrical resistivity and magnetization measurements. A giant nonsaturating magnetoresistance was observed at low temperatures, reaching ∼ 7 × 1 0 4 % at 2 K in a magnetic field of 9 T. In the AFM state, EuGa4 undergoes a series of metamagnetic transitions in an applied magnetic field, clearly manifested in its field-dependent electrical resistivity. Below T N, in the ∼4–7 T field range, we observe also a clear hump-like anomaly in the Hall resistivity which is part of the anomalous Hall resistivity. We attribute such a hump-like feature to the topological Hall effect, usually occurring in noncentrosymmetric materials known to host topological spin textures (as e.g., magnetic skyrmions). Therefore, the family of materials with a tetragonal BaAl4-type structure, to which EuGa4 and EuAl4 belong, seems to comprise suitable candidates on which one can study the interplay among correlated-electron phenomena (such as charge-density wave or exotic magnetism) with topological spin textures and topologically nontrivial bands.

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9

Zhu, L., X. X. Qu, H. Y. Cheng, and K. L. Yao. "Spin-polarized transport properties of the FeCl₂/WSe₂/FeCl₂ van der Waals heterostructure." Applied Physics Letters 120, no. 20 (May 16, 2022): 203505. http://dx.doi.org/10.1063/5.0091580.

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The discovery of the giant magnetoresistance effect has led to the rapid development of spintronics. Although the half-metals can provide a 100% spin polarization rate and significantly improved giant magnetoresistance, the materials with low Curie temperatures present challenges for their use at room temperature. In an attempt to identify the half-metallic material with high Curie temperatures for spintronics, this study investigates a van der Waals heterostructure with vertically integrated FeCl2/WSe2/FeCl2. The spin-polarized transport properties of the device based on the heterostructure studied by the density function theory combined with nonequilibrium Green's function reveal comprehensive spintronics functions, including giant magnetoresistance, spin filtering, and negative differential resistance effect. The mechanism of the negative differential resistance effect has further been elucidated by the band alignment of the heterostructure under different biases within the bias window.

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10

Blachowicz, Tomasz, Ilda Kola, Andrea Ehrmann, Karoline Guenther, and Guido Ehrmann. "Magnetic Micro and Nano Sensors for Continuous Health Monitoring." Micro 4, no. 2 (April 6, 2024): 206–28. http://dx.doi.org/10.3390/micro4020015.

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Magnetic micro and nano sensors can be used in a broad variety of applications, e.g., for navigation, automotives, smartphones and also for health monitoring. Based on physical effects such as the well-known magnetic induction, the Hall effect, tunnel magnetoresistance and giant magnetoresistance, they can be used to measure positions, flow, pressure and other physical properties. In biomedicine and healthcare, these miniaturized sensors can be either integrated into garments and other wearables, be directed through the body by passive capsules or active micro-robots or be implanted, which usually necessitates bio-functionalization and avoiding cell-toxic materials. This review describes the physical effects that can be applied in these sensors and discusses the most recent micro and nano sensors developed for healthcare applications.

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11

Xu, Yong, Jun Wang, Jun-Feng Liu, and Hu Xu. "Giant magnetoresistance effect due to the tunneling between quantum anomalous Hall edge states." Applied Physics Letters 118, no. 22 (May 31, 2021): 222401. http://dx.doi.org/10.1063/5.0050224.

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12

Mitani, S., Y. Shintani, S. Ohnuma, and H. Fujimori. "Giant Magnetoresistance and Hall Effect in Fe-Based Metal-Oxide Granular Thin Films." Journal of the Magnetics Society of Japan 21, no. 4_2 (1997): 465–68. http://dx.doi.org/10.3379/jmsjmag.21.465.

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13

Vansweevelt, Rob, Vincent Mortet, Jan D'Haen, Bart Ruttens, Chris Van Haesendonck, Bart Partoens, François M. Peeters, and Patrick Wagner. "Study on the giant positive magnetoresistance and Hall effect in ultrathin graphite flakes." physica status solidi (a) 208, no. 6 (February 23, 2011): 1252–58. http://dx.doi.org/10.1002/pssa.201001206.

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14

Huang, Dan, Hang Li, Bei Ding, Xuekui Xi, Jianrong Gao, Yong-Chang Lau, and Wenhong Wang. "Plateau-like magnetoresistance and topological Hall effect in Kagome magnets TbCo₂ and DyCo₂." Applied Physics Letters 121, no. 23 (December 5, 2022): 232404. http://dx.doi.org/10.1063/5.0111086.

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Magnetoresistance (MR) and Hall resistivity of TbCo2 and DyCo2 with a Co Kagome lattice were investigated. Apart from giant negative magnetoresistance (MR) at TC, plateau-like MR and a topological Hall effect (THE) are observed at a low magnetic field for each compound below respective TC. The plateau-like MR is attributed to a compensation of negative MR with a ferromagnetically ordered structure of Tb atoms by positive MR with a noncoplanar spin structure of the Co Kagome lattice. The THE is attributed to the noncoplanar spin structure of the Co Kagome lattice only. The MR and the Hall resistivity of each compound are reduced dramatically and undergo a reversal of its sign during cooling. The reversal phenomenon at the low temperature can be related to the freezing of spins of Co atoms. The transport in DyCo2 is more sensitive to magnetic fields than that in TbCo2 which is consistent with a stronger 4 f–3 d interaction. Observations of these transport phenomena make RCo2 compounds promising for functional applications in spintronic devices.

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15

Yan, J., X. Luo, J. J. Gao, H. Y. Lv, C. Y. Xi, Y. Sun, W. J. Lu, et al. "The giant planar Hall effect and anisotropic magnetoresistance in Dirac node arcs semimetal PtSn4." Journal of Physics: Condensed Matter 32, no. 31 (May 12, 2020): 315702. http://dx.doi.org/10.1088/1361-648x/ab851f.

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16

Granovskii, A. B., A. V. Kalitsov, and F. Brouers. "Field dependence of the anomalous Hall effect coefficient of granular alloys with giant Magnetoresistance." Journal of Experimental and Theoretical Physics Letters 65, no. 6 (March 1997): 509–13. http://dx.doi.org/10.1134/1.567384.

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17

Kobayashi, Y., K. Muta, and K. Asai. "The Hall effect and thermoelectric power correlated with the giant magnetoresistance in modified FeRh compounds." Journal of Physics: Condensed Matter 13, no. 14 (March 22, 2001): 3335–46. http://dx.doi.org/10.1088/0953-8984/13/14/308.

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18

Zikrillaev, N. F., Kh M. Iliev, G. Kh Mavlonov, S. B. Isamov, and M. Kh Madjitov. "Negative magnetoresistance in silicon doped with manganese." E3S Web of Conferences 401 (2023): 05094. http://dx.doi.org/10.1051/e3sconf/202340105094.

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Based on the developed low-temperature step-by-step diffusion of impurity manganese atoms, magnetic nanoclusters of manganese atoms were formed in the crystal lattice of silicon with controllable concentration, with specified and reproducible electrophysical parameters. With the help of electron spin resonance, it was proved experimentally that magnetic nanoclusters are formed in p-Si<B,Mn> silicon and consist of four positively charged manganese atoms which are situated in the nearest equivalent inter-nodes around the negatively charged boron atom. Based on the study of electrophysical properties of the material obtained it is shown that in such materials an anomalous Hall effect is observed. Magnetoresistance in silicon p-Si<B,Mn> with magnetic nanoclusters at room temperature was studied and a giant negative magnetoresistance (NMR) Δρ/ρ~300 %, was found, it was shown that with increasing concentration of nanoclusters, NMR value essentially rate.

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19

Pal, Ojasvi, Bashab Dey, and Tarun Kanti Ghosh. "Berry curvature induced magnetotransport in 3D noncentrosymmetric metals." Journal of Physics: Condensed Matter 34, no. 2 (October 29, 2021): 025702. http://dx.doi.org/10.1088/1361-648x/ac2fd4.

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Abstract We study the magnetoelectric and magnetothermal transport properties of noncentrosymmetric metals using semiclassical Boltzmann transport formalism by incorporating the effects of Berry curvature (BC) and orbital magnetic moment (OMM). These effects impart quadratic-B dependence to the magnetoelectric and magnetothermal conductivities, leading to intriguing phenomena such as planar Hall effect, negative magnetoresistance (MR), planar Nernst effect and negative Seebeck effect. The transport coefficients associated with these effects show the usual oscillatory behavior with respect to the angle between the applied electric field and magnetic field. The bands of noncentrosymmetric metals are split by Rashba spin–orbit coupling except at a band touching point (BTP). For Fermi energy below (above) the BTP, giant (diminished) negative MR is observed. This difference in the nature of MR is related to the magnitudes of the velocities, BC and OMM on the respective Fermi surfaces, where the OMM plays the dominant role. The absolute MR and planar Hall conductivity show a decreasing (increasing) trend with Rashba coupling parameter for Fermi energy below (above) the BTP.

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20

Ye, Rongli, Tian Gao, Haoyu Li, Xiao Liang, and Guixin Cao. "Anisotropic giant magnetoresistanceand de Hass–van Alphen oscillations in layered topological semimetal crystals." AIP Advances 12, no. 4 (April 1, 2022): 045104. http://dx.doi.org/10.1063/5.0086414.

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Here, we report an anisotropic giant magnetoresistance (GMR) effect and de Hass–van Alphen (dHvA) oscillation phenomena in nominal TaNiTe5 single crystals. TaNiTe5 exhibits the GMR effect with the maximum value of ∼3 × 103% at T = 1.7 K and B = 31 T, with no sign of saturation. The two-band model fitting of Hall resistivity indicates that the anomalous GMR effect was derived from the coexistence of electron and hole carriers. When the external magnetic field is applied to the electron–hole resonance, the GMR effect is enhanced. The dHvA oscillation data at multiple frequencies reveal the topological characteristics of high carrier mobility, low carrier effective mass, and a small Fermi surface pocket with a nontrivial Berry phase. Our work provides a new platform for the study of topological semimetals with significant anisotropic GMR effect.

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21

Kobayashi, Y., H. Sato, Y. Aoki, and A. Kamijo. "The giant magnetoresistance and the anomalous Hall effect in molecular-beam-epitaxy grown Co/Cu superlattices." Journal of Physics: Condensed Matter 6, no. 36 (September 5, 1994): 7255–67. http://dx.doi.org/10.1088/0953-8984/6/36/010.

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22

Xiao, G., J. Q. Wang, and P. Xiong. "Giant magnetoresistance and anomalous Hall effect in Co-Ag and Fe-Cu, Ag, Au, Pt granular alloys." IEEE Transactions on Magnetics 29, no. 6 (November 1993): 2694–99. http://dx.doi.org/10.1109/20.280938.

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23

Murzin, Dmitry, Desmond J. Mapps, Kateryna Levada, Victor Belyaev, Alexander Omelyanchik, Larissa Panina, and Valeria Rodionova. "Ultrasensitive Magnetic Field Sensors for Biomedical Applications." Sensors 20, no. 6 (March 11, 2020): 1569. http://dx.doi.org/10.3390/s20061569.

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The development of magnetic field sensors for biomedical applications primarily focuses on equivalent magnetic noise reduction or overall design improvement in order to make them smaller and cheaper while keeping the required values of a limit of detection. One of the cutting-edge topics today is the use of magnetic field sensors for applications such as magnetocardiography, magnetotomography, magnetomyography, magnetoneurography, or their application in point-of-care devices. This introductory review focuses on modern magnetic field sensors suitable for biomedicine applications from a physical point of view and provides an overview of recent studies in this field. Types of magnetic field sensors include direct current superconducting quantum interference devices, search coil, fluxgate, magnetoelectric, giant magneto-impedance, anisotropic/giant/tunneling magnetoresistance, optically pumped, cavity optomechanical, Hall effect, magnetoelastic, spin wave interferometry, and those based on the behavior of nitrogen-vacancy centers in the atomic lattice of diamond.

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24

Djamal, Mitra, and Ramli. "Thin Film of Giant Magnetoresistance (GMR) Material Prepared by Sputtering Method." Advanced Materials Research 770 (September 2013): 1–9. http://dx.doi.org/10.4028/www.scientific.net/amr.770.1.

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In recent decades, a new magnetic sensor based on magnetoresistance effect is highly researched and developed intensively. GMR material has great potential as next generation magnetic field sensing devices. It has also good magnetic and electric properties, and high potential to be developed into various applications of electronic devices such as: magnetic field sensor, current measurements, linear and rotational position sensor, data storage, head recording, and non-volatile magnetic random access memory. GMR material can be developed to be solid state magnetic sensors that are widely used in low field magnetic sensing applications. A solid state magnetic sensor can directly convert magnetic field into resistance, which can be easily detected by applying a sense current or voltage. Generally, there are many sensors for measuring the low magnetic field, such as: fluxgate sensor, Hall sensor, induction coil, GMR sensor, and SQUID sensor. Compared to other low magnetic field sensing techniques, solid state sensors have demonstrated many advantages, such as: small size (<0.1mm2), low power, high sensitivity (~0.1Oe) and good compatibility with CMOS technology. The thin film of GMR is usually prepared using: sputtering, electro deposition or molecular beam epitaxy (MBE) techniques. But so far, not many researchers reported the manufacture of thin film of GMR by dc-Opposed Target Magnetron Sputtering (dc-OTMS). In this paper, we inform the development of GMR thin film with sandwich and spin valve structures using dc-OTMS method. We have also developed organic GMR with Alq3 as a spacer layer.

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25

Huy, Ho Hoang, Julian Sasaki, Nguyen Huynh Duy Khang, Shota Namba, Pham Nam Hai, Quang Le, Brian York, et al. "Large inverse spin Hall effect in BiSb topological insulator for 4 Tb/in² magnetic recording technology." Applied Physics Letters 122, no. 5 (January 30, 2023): 052401. http://dx.doi.org/10.1063/5.0135831.

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It is technically challenging to shrink the size of a tunneling magnetoresistance reader to below 20 nm for magnetic recording technology beyond 4 Tb/in2 due to its complex film stack. Recently, we proposed a reader architecture based on the inverse spin Hall effect to resolve those challenges, referred below as spin–orbit torque (SOT) reader, whose structure consists of a SOT layer and a ferromagnetic layer. However, the heavy metal-based SOT reader has small output voltage and low signal-to-noise ratio (SNR) due to the limited spin Hall angle θSH (< 1) of heavy metals. In this Letter, we demonstrate the integration of BiSb topological insulator with strong inverse spin Hall effect into the SOT reader that can significantly improve the output voltage and SNR. First, we theoretically calculate the noises in a 20 × 20 nm2 BiSb-based SOT reader to establish the relationships between SNR and θSH at various bias currents. We then demonstrate proof-of-concept BiSb-based SOT readers using CoFe/MgO/BiSb stack, which show large output voltages up to 15 mV at an input current of 9.4 kA/cm2 at room temperature. We project a giant θSH = 61 for BiSb. Our work demonstrates the potential of BiSb for SOT reader beyond 4 Tb/in2 magnetic recording technology.

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26

Panda, S. N., S. Mondal, J. Sinha, S. Choudhury, and A. Barman. "All-optical detection of interfacial spin transparency from spin pumping in β-Ta/CoFeB thin films." Science Advances 5, no. 4 (April 2019): eaav7200. http://dx.doi.org/10.1126/sciadv.aav7200.

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Generation and utilization of pure spin current have revolutionized energy-efficient spintronic devices. Spin pumping effect generates pure spin current, and for its increased efficiency, spin-mixing conductance and interfacial spin transparency are imperative. The plethora of reports available on generation of spin current with giant magnitude overlook the interfacial spin transparency. Here, we investigate spin pumping in β-Ta/CoFeB thin films by an all-optical time-resolved magneto-optical Kerr effect technique. From variation of Gilbert damping with Ta and CoFeB thicknesses, we extract the spin diffusion length of β-Ta and spin-mixing conductances. Consequently, interfacial spin transparency is derived as 0.50 ± 0.03 from the spin Hall magnetoresistance model for the β-Ta/CoFeB interface. Furthermore, invariance of Gilbert damping with Cu spacer layer thickness inserted between β-Ta and CoFeB layers confirms the absence of other interface effects including spin memory loss. This demonstrates a reliable and noninvasive way to determine interfacial spin transparency and signifies its role in generation of pure spin current by spin pumping effect.

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27

Shu, Yu, Dongli Yu, Wentao Hu, Yanbin Wang, Guoyin Shen, Yoshio Kono, Bo Xu, Julong He, Zhongyuan Liu, and Yongjun Tian. "Deep melting reveals liquid structural memory and anomalous ferromagnetism in bismuth." Proceedings of the National Academy of Sciences 114, no. 13 (March 13, 2017): 3375–80. http://dx.doi.org/10.1073/pnas.1615874114.

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As an archetypal semimetal with complex and anisotropic Fermi surface and unusual electric properties (e.g., high electrical resistance, large magnetoresistance, and giant Hall effect), bismuth (Bi) has played a critical role in metal physics. In general, Bi displays diamagnetism with a high volumetric susceptibility (∼10−4). Here, we report unusual ferromagnetism in bulk Bi samples recovered from a molten state at pressures of 1.4–2.5 GPa and temperatures above ∼1,250 K. The ferromagnetism is associated with a surprising structural memory effect in the molten state. On heating, low-temperature Bi liquid (L) transforms to a more randomly disordered high-temperature liquid (L′) around 1,250 K. By cooling from above 1,250 K, certain structural characteristics of liquid L′ are preserved in L. Bi clusters with characteristics of the liquid L′ motifs are further preserved through solidification into the Bi-II phase across the pressure-independent melting curve, which may be responsible for the observed ferromagnetism.

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28

Barla, Prashanth, Vinod Kumar Joshi, and Somashekara Bhat. "Spintronic devices: a promising alternative to CMOS devices." Journal of Computational Electronics 20, no. 2 (January 19, 2021): 805–37. http://dx.doi.org/10.1007/s10825-020-01648-6.

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AbstractThe field of spintronics has attracted tremendous attention recently owing to its ability to offer a solution for the present-day problem of increased power dissipation in electronic circuits while scaling down the technology. Spintronic-based structures utilize electron’s spin degree of freedom, which makes it unique with zero standby leakage, low power consumption, infinite endurance, a good read and write performance, nonvolatile nature, and easy 3D integration capability with the present-day electronic circuits based on CMOS technology. All these advantages have catapulted the aggressive research activities to employ spintronic devices in memory units and also revamped the concept of processing-in-memory architecture for the future. This review article explores the essential milestones in the evolutionary field of spintronics. It includes various physical phenomena such as the giant magnetoresistance effect, tunnel magnetoresistance effect, spin-transfer torque, spin Hall effect, voltage-controlled magnetic anisotropy effect, and current-induced domain wall/skyrmions motion. Further, various spintronic devices such as spin valves, magnetic tunnel junctions, domain wall-based race track memory, all spin logic devices, and recently buzzing skyrmions and hybrid magnetic/silicon-based devices are discussed. A detailed description of various switching mechanisms to write the information in these spintronic devices is also reviewed. An overview of hybrid magnetic /silicon-based devices that have the capability to be used for processing-in-memory (logic-in-memory) architecture in the immediate future is described in the end. In this article, we have attempted to introduce a brief history, current status, and future prospectus of the spintronics field for a novice.

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29

Monteblanco, Elmer, Christian Ortiz Pauyac, Williams Savero, J. Carlos RojasSanchez, and A. Schuhl. "ESPINTRÓNICA, LA ELECTRONICA DEL ESPÍN SPINTRONICS, SPIN ELECTRONICS." Revista Cientifica TECNIA 23, no. 1 (March 10, 2017): 5. http://dx.doi.org/10.21754/tecnia.v23i1.62.

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En la actualidad el desarrollo de la tecnología nos ha conducido a elaborar dispositivos nanométricos capaces de almacenar y procesar información. Estos dispositivos serían difíciles de imaginar en la electrónica, la cual se basa en la manipulación de la carga eléctrica del electrón. Sin embargo, gracias a los avances en la física teórica y experimental en el campo de la materia condensada, estos dispositivos ya son una realidad, perteneciendo a lo que actualmente se denomina la electrónica del espín o espintrónica, la cual basa su funcionalidad en el control del espín del electrón, una propiedad que sólo puede ser concebida a nivel cuántico. En el presente artículo revisaremos esta nueva perspectiva, describiendo la Magnetorresistencia Gigante y de Efecto Túnel, la transferencia de momento de espín y sus respectivas aplicaciones como son las memorias MRAM, nano-osciladores y válvulas laterales de espín. Palabras clave.- Espintrónica, Magnetorresistencia, GMR, TMR, MRAM, Nano-osciladores, dinámica de magnetización, Efecto Hall de spin, Transferencia de torque de spin. ABSTRACTCurrent technology seeks to develop nanoscale devices capable of storing and processing information. These devices would be difficult to make in the area of electronics, which is based on the manipulation of electric charge. However, thanks to advances in experimental and theoretical physics in the field of condensed matter, these devices are already a reality, belonging to the field of what we now call spintronics, which bases its functionality on the control of the electron’s spin, a property that can only be conceived at the quantum level. In this article we review this new perspective, describing giant- and tunneling- magnetoresistance, the spin transfer torque, and their applications such as MRAM memories, nano-oscillators and lateral spin valves. Keywords.- Spintronics, Magnetoresistance, GMR, TMR, MRAM, Nano-oscillators, Magnetization dynamics, Spin Hall effect, Spin transfer torque.

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30

Wen, Zhenchao, Takahide Kubota, Tatsuya Yamamoto, and Koki Takanashi. "Enhanced current-perpendicular-to-plane giant magnetoresistance effect in half-metallic NiMnSb based nanojunctions with multiple Ag spacers." Applied Physics Letters 108, no. 23 (June 6, 2016): 232406. http://dx.doi.org/10.1063/1.4953403.

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31

Yurasov, A. N., and M. M. Yashin. "Accounting for the influence of granule size distribution in nanocomposites." Russian Technological Journal 8, no. 2 (April 14, 2020): 59–66. http://dx.doi.org/10.32362/2500-316x-2020-8-2-59-66.

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This paper discusses the effect of the distribution of the granules size in nanocomposites on physical properties within the framework of the quasi-classical size effect. Methods of effective medium for describing nanocomposites are discussed. This paper also notes and discusses the contribution of various mechanisms that affect the optical and magneto-optical properties of such structures, especially in the IR region of the spectrum, where the quasi-classical dimensional effect is most pronounced. The Droude-Lorentz mode describes the contribution of the dimensional effect to the diagonal and non-diagonal components of the effective medium's permittivity tensor. The lognormal distribution of the granule size characteristic of many nanostructures is considered. Based on this approach, the dependences of the standard deviation on the value of the integral as a function of the average size of the granules were obtained. Based on the normalization condition, the numerical value of the standard deviation of the r values and the average particle size were analytically determined. This paper also discusses the fundamental significance of the results obtained – the possibility of applying this approach to all possible distributions. The found value of the average size of nanocomposite granules makes it possible to model various properties of nanocomposite structures, first of all, optical and magneto-optical properties, with the help of known methods within the framework of the effective medium approximation. This is especially important for describing the percolation transition in nanocomposites. The problem being solved is important and relevant, since many interesting and important effects are realized in such magnetic nanocomposites, such as the magneto-optical Kerr effect, the anomalous Hall effect, the giant magnetoresistance, and many others. The results obtained allow us to better describe materials that are widely used in modern electronics and nanoelectronics.

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32

Huang, Hai, Anmin Zheng, Guoying Gao, and Kailun Yao. "Thermal spin filtering effect and giant magnetoresistance of half-metallic graphene nanoribbon co-doped with non-metallic Nitrogen and Boron." Journal of Magnetism and Magnetic Materials 449 (March 2018): 522–29. http://dx.doi.org/10.1016/j.jmmm.2017.10.087.

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33

Ritter, Clemens. "Neutrons Not Entitled to Retire at the Age of 60: More than Ever Needed to Reveal Magnetic Structures." Solid State Phenomena 170 (April 2011): 263–69. http://dx.doi.org/10.4028/www.scientific.net/ssp.170.263.

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In 1949 Shull et al. [1] used for the first time neutrons for the determination of a magnetic structure. Ever since, the need for neutrons for the study of magnetism has increased. Two main reasons can be brought forward to explain this ongoing success: First of all a strong rise in research on functional materials (founding obliges) and secondly the increasing availability of easy to use programmes for the treatment of magnetic neutron diffraction data. The giant magnetoresistance effect, multiferroic materials, magnetoelasticity, magnetic shape memory alloys, magnetocaloric materials, high temperature superconductivity or spin polarized half metals: The last 15 years have seen the event of all these “hot topics” where the knowledge of the magnetism is a prerequisite for understanding the underlying functional mechanisms. Refinement programs like FULLPROF or GSAS and programs for magnetic symmetry analysis like BASIREPS or SARAH make the determination of magnetic structures accessible for non specialists. Following a historical overview on the use of neutron powder diffraction for the determination of magnetic structures, I will try to convince you of the easiness of using magnetic symmetry analysis for the determination of magnetic structures using some recent examples of own research on the rare earth iron borate TbFe3(BO3)4 and the rare earth transition metal telluride Ho6FeTe2.

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MAJUMDAR, SAYANI, SUKUMAR DEY, HANNU HUHTINEN, JOHNNY DAHL, MARJUKKA TUOMINEN, PEKKA LAUKKANEN, SEBASTIAAN VAN DIJKEN, and HIMADRI S. MAJUMDAR. "COMPARATIVE STUDY OF SPIN INJECTION AND TRANSPORT IN Alq3 AND Co–PHTHALOCYANINE-BASED ORGANIC SPIN VALVES." SPIN 04, no. 02 (June 2014): 1440009. http://dx.doi.org/10.1142/s2010324714400098.

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Recent experimental reports suggest the formation of a highly spin-polarized interface ("spinterface") between a ferromagnetic (FM) Cobalt ( Co ) electrode and a metal-phthalocyanine (Pc) molecule. Another report shows an almost 60% giant magnetoresistance (GMR) response measured on Co / H 2 Pc -based single molecule spin valves. In this paper, we compare the spin injection and transport properties of organic spin valves with two different organic spacers, namely Tris(8-hydroxyquinolinato) aluminum ( Alq 3) and CoPc sandwiched between half-metallic La 0.7 Sr 0.3 MnO 3 (LSMO) and Co electrodes. Alq 3-based spin valves exhibit clear and reproducible spin valve switching with almost 35% negative GMR at 10 K, in accordance with previous reports. In contrast, cobalt-pthalocyanine ( CoPc )-based spin valves fail to show clear GMR response above noise level despite high expectations based on recent reports. Investigations of electronic, magnetic and magnetotransport properties of electrode/spacer interfaces of LSMO/ CoPc / Co devices offer three plausible explanations for the absence of GMR: (1) CoPc films are strongly chemisorbed on the LSMO surface. This improves the LSMO magnetic properties but also induces local traps at the LSMO interface for spin-polarized charge carriers. (2) At the Co / CoPc interface, diffusion of Co atoms into the organic semiconductor (OS) layer and chemical reactivity between Co and the OS deteriorates the FM properties of Co . This renders the Co / CoPc interface as unsuitable for efficient spin injection. (3) The presence of heavy Co atoms in CoPc leads to large spin–orbit coupling in the spacer. The spin relaxation time in the CoPc layer is therefore considerably smaller compared to Alq 3. Based on these findings, we suggest that the absence of GMR in CoPc -based spin valves is caused by a combined effect of inefficient spin injection from FM contacts and poor spin transport in the CoPc spacer layer.

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Jung, Myung-Hwa, Jon M. Lawrence, Takao Ebihara, Michael F. Hundley, and Alex H. Lacerda. "Hall effect and magnetoresistance of YbAl3." Physica B: Condensed Matter 312-313 (March 2002): 354–55. http://dx.doi.org/10.1016/s0921-4526(01)01120-6.

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Vanacken, J., E. Haanappel, S. Stroobants, T. Wambecq, V. Mashkautsan, C. Proust, L. Rigal, and V. V. Moshchalkov. "Hall effect and magnetoresistance of La1.875Sr0.125CuO4." Physica B: Condensed Matter 346-347 (April 2004): 334–38. http://dx.doi.org/10.1016/j.physb.2004.01.101.

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Neubauer, A., C. Pfleiderer, R. Ritz, P. G. Niklowitz, and P. Böni. "Hall effect and magnetoresistance in MnSi." Physica B: Condensed Matter 404, no. 19 (October 2009): 3163–66. http://dx.doi.org/10.1016/j.physb.2009.07.055.

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Diehl, J., H. Fischer, R. Köhler, C. Geibel, F. Steglich, Y. Maeda, T. Takabatake, and H. Fujii. "Hall effect and magnetoresistance in UNiSn." Physica B: Condensed Matter 186-188 (May 1993): 708–10. http://dx.doi.org/10.1016/0921-4526(93)90680-5.

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Kar’kin, A. E., D. A. Shulyatev, A. A. Arsenov, V. A. Cherepanov, and E. A. Filonova. "Magnetoresistance and Hall effect in La0.8Sr0.2MnO3." Journal of Experimental and Theoretical Physics 89, no. 2 (August 1999): 358–65. http://dx.doi.org/10.1134/1.558992.

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40

Seng, P., J. Diehl, S. Klimm, S. Horn, R. Tidecks, K. Samwer, H. Hänsel, and R. Gross. "Hall effect and magnetoresistance inNd1.85Ce0.15CuO4−δfilms." Physical Review B 52, no. 5 (August 1, 1995): 3071–74. http://dx.doi.org/10.1103/physrevb.52.3071.

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Flouda, E., and C. Papastaikoudis. "Hall Effect and Magnetoresistance in PdHxFilms*." Zeitschrift für Physikalische Chemie 181, Part_1_2 (January 1993): 359–66. http://dx.doi.org/10.1524/zpch.1993.181.part_1_2.359.

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42

Kakihana, Masashi, Dai Aoki, Ai Nakamura, Fuminori Honda, Miho Nakashima, Yasushi Amako, Shota Nakamura, et al. "Giant Hall Resistivity and Magnetoresistance in Cubic Chiral Antiferromagnet EuPtSi." Journal of the Physical Society of Japan 87, no. 2 (February 15, 2018): 023701. http://dx.doi.org/10.7566/jpsj.87.023701.

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43

Jimbo, M., T. Kariya, R. Imada, Y. Fujiwara, and S. Tsunashima. "Giant magnetoresistance effect in Fe56Co30Ni14/Cu." Journal of Magnetism and Magnetic Materials 165, no. 1-3 (January 1997): 304–7. http://dx.doi.org/10.1016/s0304-8853(96)00536-7.

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44

Duy Khang, Nguyen Huynh, and Pham Nam Hai. "Giant unidirectional spin Hall magnetoresistance in topological insulator – ferromagnetic semiconductor heterostructures." Journal of Applied Physics 126, no. 23 (December 21, 2019): 233903. http://dx.doi.org/10.1063/1.5134728.

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45

Schewe, Phil F. "The giant planar Hall effect." Physics Today 56, no. 5 (May 2003): 9. http://dx.doi.org/10.1063/1.2409967.

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Briane, Marc, and Graeme W. Milton. "Giant Hall Effect in Composites." Multiscale Modeling & Simulation 7, no. 3 (January 2009): 1405–27. http://dx.doi.org/10.1137/08073189x.

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47

Constantinian K. Y., Ovsyannikov G. A., Shadrin A. V., Shmakov V. A., Petrzhik A. M., Kislinskii Yu. V., and Klimov A. A. "Spin magnetoresistance of a strontium iridate/manganite heterostructure." Physics of the Solid State 64, no. 10 (2022): 1410. http://dx.doi.org/10.21883/pss.2022.10.54227.46hh.

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The results of the angular dependences of the magnetoresistance of the SrIrO3/La0.7Sr0.3MnO3 heterostructure made of oxide thin films epitaxially grown on a NdGaO3 substrate are presented and discussed. The resistance of the heterostructure was measured in configuration of planar Hall effect with magnetic field applied in parallel making possible to estimate the spin-Hall angle. The contribution of the anisotropic magnetoresistance and the spin-Hall magnetoresistance occurred due to strong spin-orbit interaction in the SrIrO3 film were evaluated. Keywords: strontium iridate, spin-orbit interaction, spin magnetoresistance, spin-Hall angle.

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Sekiguchi, K., M. Shimizu, E. Saitoh, and H. Miyajima. "Giant Magnetoresistance Effect in Ferromagnetic Ni Nanowires." Journal of the Magnetics Society of Japan 29, no. 3 (2005): 261–64. http://dx.doi.org/10.3379/jmsjmag.29.261.

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Rinkevich, A. B., M. A. Milyaev, L. N. Romashev, and D. V. Perov. "Microwave Giant Magnetoresistance Effect in Metallic Nanostructures." Physics of Metals and Metallography 119, no. 13 (December 2018): 1297–300. http://dx.doi.org/10.1134/s0031918x18130100.

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50

Burkett, S. L. "Effect of silicon processing on giant magnetoresistance." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 14, no. 4 (July 1996): 3131. http://dx.doi.org/10.1116/1.589075.

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