Dissertations / Theses on the topic 'Giant Magnetoresistance and Hall effect'

For many decades there has been a need in many industries to measure speed and position of ferrous gears. This is commonly done by converting passing gear teeth from trigger wheels to electrical impulses to calculate speed and angular position. By using Hall effect sensors or Giant Magnetoresistance sensors (GMR), a zero speed detection of gear teeth is possible while at the same time be cheap to produce and durable for harsh environments. A specially designed trigger-wheel (cogwheel created for measurements) with gear teeth in a specific pattern, exact position can be detected by using a dual sensor, even when no earlier information is available. The new design of trigger-wheel also makes this new method more accurate and universal compared to previous solutions. This thesis demonstrates and argues for the advantages of using a dual sensor for speed and angular position detection on gear wheels. Were one sensor do quantitative measurements for pattern detection in the teeth arrangements and the other sensor do qualitative measurements for position detection.

Cette thèse présente l’étude des propriétés électroniques et de transitions de phases de deux dichalcogénures de métaux de transition en couches fines : WTe2 et MoTe2. L’intérêt de ces matériaux réside dans leurs phases métastables à température et pression ambiantes, 1T’ et Td, les classant dans les semi-métaux de Weyl. Grâce à un échange réalisé à IISER Pune en Inde, nous avons pu synthétiser des monocristaux de 2H-MoTe2, 1T’-MoTe2 et Td-WTe2 par transport chimique en phase vapeur (CVT). Ces cristaux d’une grande qualité ont pu être caractérisés par DRX, MEB-EDX et spectroscopie Raman. Nous avons ensuite exfolié ces derniers par la méthode de collage anodique propre à notre laboratoire pour les caractériser en couches minces, puis mettre en place des dispositifs de mesure de transport grâce à l’évaporation de contacts en Or. Dans le contexte de pluralité de phases stables et métastables des dichalcogénures de métaux de transition, l’étude des transitions entre ces phases est très intéressante. Nous présentons la transition en température 1T’-Td dans MoTe2 et observons l’impact de l’épaisseur sur la température de transition, pouvant ainsi établir un diagramme de phase. Également, nous prouvons l’absence de transition 2H-1T’ et de sa réversibilité dans une monocouche de MoTe2 induite purement par dopage électrostatique, revendiquée dans des travaux récents. Cette transition, de la phase semi-conductrice vers la phase semi-métallique, présente un fort potentiel d’application dans le domaine des nanotechnologies comme switch électronique. Nous mettons en évidence, grâce à une expérience de dopage par charge d’espace fort et de mesure par spectroscopie Raman, le rôle de la migration du Tellure et de la création de lacunes dans cette transition. Nous avons également mesuré les propriétés de transport (magnétorésistance et effet Hall) de différente épaisseur de couches de Td-WTe2. Grâce à l’ajustement des paramètres d’un modèle à deux porteurs, nous avons déterminé les densités de porteurs ainsi que leurs mobilités et avons relié nos résultats à la théorie des semi-métaux compensés responsable de la gigantesque magnétorésistance de ce matériau. Ces expériences mettent en évidence le comportement plus résistif des couches les plus fines accompagné d’anti-localisation faible à basse température, tandis que les couches les plus épaisses sont plus conductrices et présentent des oscillations quantiques Shubnikov-de Haas à fort champ magnétique
This work presents the study of phase transitions and electronic properties of two transition metal dichalcogenides: WTe2 and MoTe2. The relevance of those materials lies in its two metastable phases at ambient pressure and temperature, 1T’ and Td, classifying them as Weyl semi-metals. We had the chance to synthesize 2H-MoTe2, 1T’-MoTe2 and Td-WTe2 monocrystals by chemical vapour transport during an exchange at IISER Pune in India. High quality resulting crystals were characterized by XRD, SEM-EDX and Raman spectroscopy. Then we could exfoliate it by the anodic bonding method proper to our laboratory, characterize their 2D form and build electronic measurement devices by gold contact deposition. In the context of multiple transition metal dichalcogenides stable and metastable phases, the study of the transitions between those phases is very interesting. We first present 1T’ to Td temperature induced phase transition in MoTe2 and observe the impact of layer thickness on transition temperature and establish a phase diagram. Then, we prove the absence of 2H to 1T’ transition and its reversibility in a MoTe2 monolayer purely induced by electrostatic doping, claimed by recent works. This transition, from semi-conductive to semi-metallic phase is likely predicted for applications in nanotechnologies as an electronic switch. Through space charge doping and Raman spectroscopy experiment, we highlight the role of Tellurium migration and the creation of vacancies in this transition. We also measured Td-WTe2 transport properties (magnetoresistance and Hall effect) of various layer thicknesses. Through a two band model parameters adjustment, we could determine carriers densities and mobilities and relate them to compensated semi-metal theory responsible of Giant Magnetoresistance response of this material. Those experiments could highlight the more insulating behaviour of thinner layers and the presence of weak anti-localization at low temperature, whereas the thinner layers are more conductive and exhibits Shubnikov-de Haas quantum oscillations at high magnetic field

The design, fabrication and performance of an Extraordinary Magnetoresistance (EMR) and a Vertical Mesa Hall Sensor (VMHS) are studied. EMR devices have been fabricated from a 2DEG InAs/GaSb structures which exhibit a low carrier density and high mobility that achieve the best performance. The general electrical magneto-transport properties are given. The experiments investigate mainly different metallic patterns, which are Rectangular, Triangular and Tip pattern between 4-300 K. Probe configurations and the enhancement of relative size of metallic patterns are described. EMR effect is due to current deflection around the metal-semiconductor interface. The results are metallic pattern dependent. Using finite element analysis, good agreement between experimental and theoretical results was found. The best performance sensor is a symmetrical metallic Tip pattern. It is enhanced by the length of the Tip’s point and the large metallic area. This pattern when combines with an asymmetrical probe configuration, exhibits the highest EMR of 900% at –0.275T measured by inner probes and the best sensitivity of 54Ω/T at room temperature. The second study presents in-plane Hall effect sensors made from InSb. A simple device geometry has been used in which current flows in a plane perpendicular to the device surface. Device sensitivity depends on its geometry and a series of different contacts are used to investigate the geometry of the current flow distribution. The structures produced are only sensitive to the presence of one in-plane field component, and they also demonstrate good angular selectivity. Multi-electrodes were used to investigate biasing current from both mesa and substrate condition. We are able to examine the Hall voltage as a function of contact positions and also to create multiple VMHS. Offset reduction of devices has been achieved by moving the ground contacts to re-balance the current distribution under the mesa surface.

We report an investigation of anomalous-Hall resistance (AHR) and spin-Hall magnetoresistance (SMR) in Pt/Ir20Mn80/Y3Fe5O12 (Pt/IrMn/YIG) heterostructures. The AHR of Pt/IrMn/YIG heterostructures with an antiferromagnetic inserted layer is dramatically enhanced as compared to that of the Pt/YIG bilayer. The temperature dependent AHR behavior is nontrivial, while the IrMn thickness dependent AHR displays a peak at an IrMn thickness of 3 nm. The observed SMR in the temperature range of 10-300 K indicates that the spin current generated in the Pt layer can penetrate the IrMn layer (<= 3 nm) to interact with the ferromagnetic YIG layer. The lack of conventional anisotropic magnetoresistance (AMR) implies that the insertion of the IrMn layer between Pt and YIG could efficiently suppress the magnetic proximity effect (MPE) on induced Pt moments by YIG. Published by AIP Publishing.

We investigate spin-current transport with an antiferromagnetic insulator NiO thin layer by means of the spin-Hall magnetoresistance (SMR) over a wide range of temperature in Pt/NiO/Y3Fe5O12 (Pt/NiO/YIG) heterostructures. The SMR signal is comparable to that without the NiO layer as long as the temperature is near or above the blocking temperature of the NiO, indicating that the magnetic fluctuation of the insulating NiO is essential for transmitting the spin current from the Pt to YIG layer. On the other hand, the SMR signal becomes negligibly small at low temperature, and both conventional anisotropic magnetoresistance and the anomalous Hall resistance are extremely small at any temperature, implying that the insertion of the NiO has completely suppressed the Pt magnetization induced by the YIG magnetic proximity effect (MPE). The dual roles of the thin NiO layer are, to suppress the magnetic interaction or MPE between Pt and YIG, and to maintain efficient spin current transmission at high temperature. Published by AIP Publishing.

Magnetic, magnetocaloric, magnetotransport and magnetoelastic properties of Ni-Mn-X (X = In, and Ga) Heusler alloys and La-Fe-Si based rare earth compounds have been synthesized and investigated by x-ray diffraction, magnetization, strain, and electrical resistivity measurements. The phase transitions, magnetic, magnetocaloric, magnetotransport and magnetoelastic properties strongly depend on the composition of these systems. In Ni50Mn50-xInx with x = 13.5, magnetocaloric and magnetotransport properties associated with the paramagnetic martensitic to paramagnetic austenitic transformation were studied. It was shown that magnetic entropy changes (SM) and magnetoresistance (MR) associated with this transformation are larger and the hysteresis effect is significantly lower when compared to that associated with paramagnetic-ferromagnetic transitions or ferromagnetic-antiferromagnetic/paramagnetic transitions in other systems. The Hall resistivity and the Hall angle shows unusual behavior in the vicinity of the martensitic phase transition for Ni50Mn50-xInx with x = 15.2. The observed Hall resistivity and Hall angle are 50 μ*cm and , respectively. It was observed that the presence of Ge, Al and Si atoms on the In sites strongly affects the crystal structure, and the electric and magnetic behaviors of Ni50Mn35In15. It was found that the partial substitution of In atoms by Si in Ni50Mn35In15 results in an increase in the magnetocaloric effect, exchange bias and shape memory effect. In Ni50Mn35In15-xSix, the peak values of positive SM for magnetic field changes H = 5 T were found to depend on composition and vary from 82 Jkg-1K-1 for x = 1 (at T = 275 K) to 124 Jkg-1K-1 for x = 3 (at T = 239 K). The partial substitution of Ni by Co in Ni50Mn35In15 significantly improves the magnetocaloric effect and MR in the vicinity of martensitic transition. In addition, significantly large inverse SM and MR were observed at the inverse martensitic phase transitions of the Ga-based magnetic shape memory Heusler alloys Ni50-xCoxMn32-yFeyGa18. The phase transition temperatures and magnetic properties were found to be correlated with the degree of tetragonal distortion in these samples. In LaFe11.57Si1.43Bx the crystal cell parameters and Curie temperatures were found to increase linearly with increasing B concentration up to ~ 0.1 % and 9 %, respectively. It was found that the characteristics of the magnetocaloric effect of LaFe11.57Si1.43 can be adjusted by a change in B concentration in the LaFe11.57Si1.43Bx system. A study of the influence of a small substitution of Ni, Cu, Cr, and V for Fe in LaFe11.4Si1.6 revealed that the magnetic, magnetocaloric, and magnetovolume coupling constant is related to an increase in the average Fe-Fe interatomic distances, leading to a change in the d-d exchange interaction.

In recent years, Spin Seebeck effect (SSE) emerges as one of the efficient and easiest ways to generate pure spin current for spintronics devices. In this dissertation, we have systematically studied the SSE and related phenomena like spin Hall magneto-resistance (SMR), anomalous Nernst effect (ANE) in functional magnetic oxides for both fundamental understanding of their origins and practical ways to apply into technological devices. The research has been performed on three different systems of topical interest: (i) Y3Fe5O12 (YIG)/Pt and YIG/C60/Pt, (ii) CoFe2O4 (CFO)/Pt and CFO/C60/Pt, and (iii) Nd0.6Sr0.4MnO3 (NSMO). In case of the YIG/Pt structure, we have achieved a new consensus regarding the temperature dependence of the longitudinal SSE (LSSE). For the first time, we have demonstrated the temperature dependence of LSSE in association with the magnetocrystalline anisotropy (HK) and surface perpendicular magnetic anisotropy field (HKS) of YIG in the same YIG/Pt system. We show that on lowering temperature, the sharp drop in LSSE signal (VLSSE) and the sudden increases in HK and HKS at ~175 K are associated with the spin reorientation due to single ion anisotropy of Fe2+ ions. The VLSSE peak at ~75 K is attributed to the HKS and MS (saturation magnetization) whose peaks also occur at the same temperature. The effects of surface and bulk magnetic anisotropies are corroborated with those of thermally excited magnon number and magnon propagation length to satisfactorily explain the temperature dependence of LSSE in the Pt/YIG system. As a new way to reduce conductivity mismatch, promote spin transport, and tune the spin mixing conductance (G) at the YIG/Pt interface, we have deposited an organic semiconductor (OSC), C60, between ferrimagnetic material (FM) and Pt. Transverse susceptibility study on YIG/C60/Pt has shown that the deposition of C60 has reduced HKS at the surface of YIG significantly, due to the hybridization between the dz2 orbital in Fe and C atoms, leading to the overall increase in spin moments and G and consequently the LSSE. Upon lowering temperature from 300 K, we have observed an exponential increase in LSSE at low temperature (a ~800% increment at 150 K) in this system, which is attributed to the exponential increase in the spin diffusion length of C60 at low temperature. On the other hand, similar experiments on CoFe2O4 (CFO)/C60/Pt show a reduction in the LSSE signal at room temperature, due to the hybridization between the dz2 orbital in Co and C atoms that results in the increased magnetic anisotropy. Upon decreasing the temperature below 150 K, we have interestingly observed that LSSE signal from CFO/C60/Pt exceeds that of CFO/Pt and increases remarkably with temperature. This finding confirms the important role played by the spin diffusion length of C60 in enhancing the LSSE. A systematic study of SMR, SSE, and HKS on the YIG/Pt system using the same YIG single crystal has revealed a low-temperature peak at the same temperature (~75 K) for all the phenomena. Given the distinct origins of the SSE and SMR, our observation points to the difference in spin states between the bulk and surface of YIG as the main reason for such a low-temperature peak, and suggests that the ‘magnon phonon drag’ theory developed to explain the temperature-dependent SSE behavior should be adjusted to include this important effect. SSE and ANE studies on NSMO films have revealed the dominance of ANE over SSE in this class of perovskite-structured materials. The substrate-dependent study of the films shows that compressive strain developed due to the large lattice mismatch from LAO gives rise to the enhanced ANE signal. On the same substrate, ANE signal strength increases as the thickness increases. A sign change in ANE has been observed at a particular temperature, which explains that the Anomalous Hall effect (AHE) and ANE in these systems arise due to intrinsic scattering mechanisms. Overall, we have performed the SSE and related studies on the three important classes of functional magnetic oxide materials. We demonstrate the important role of magnetic anisotropy in manipulating the SSE in these systems. With this knowledge, we have been able to design the novel YIG/C60/Pt and CFO/C60/Pt heterostructures that exhibit the giant SSEs. The organic semiconductor C60 has been explored for the first time as a means of controlling pure spin current in inorganic magnetic oxide/metal heterostructures, paying the way for future spintronic materials and devices.

In recent years, the interest for miniaturization of spaceborne instruments and subsystems has increased steadily, as this enables development of small and lightweight satellite classes as well as more versatile payloads on traditional spacecraft. In essence, this thesis work is an investigation of the applicability of magnetoresistive technology to a magnetometer intended for space. Two types of magnetoresistive sensors, promising with respect to performance competiveness also after considerable miniaturization, were developed and evaluated, namely magnetic tunnel junctions and planar Hall effect bridge sensors. In the case of the magnetic tunnel junctions, much effort was put on the micromanufacturing process. Two schemes were developed and evaluated for sensor contouring: one employing focused ion beam processes for rapid prototyping, and the other combining sputtering and x-ray photoelectron spectroscopy for precise etch depth monitoring during ion etching. For the former, the resulting implantation damages were investigated with chemical analysis and correlated to the sensor properties. In the latter, the depth of the etching was monitored live with a resolution sufficient to stop the etching in the 1 nm thick tunneling barrier. The effect and extent of redeposition were investigated by transmission electron microscopy and micromagnetic analysis. With the knowledge so gained, the tunneling magnetoresistance of the manufactured junctions could be improved significantly and their inherent noise could be reduced. As a step in space flight qualification, the magnetic tunnel junctions were subjected to both g and particle radiation, leaving them unaffected by the first, but rendering them a reduced tunneling magnetoresistance ratio and an increased coercivity by the latter. In the case of the planar Hall effect bridge sensors, their inherent noise was thoroughly investigated, revealing both electric and magnetic 1/f noise at low frequencies along with thermal noise at higher frequencies. In addition, an analytical model of the magnetic properties of the planar Hall effect bridges was developed, and a design process, based on the model, was established to optimize the bridges for a particular application. In conclusion, both types of sensors show great promises for use in space. Of the two, the planar Hall effect bridge sensors had a better detection limit at low frequencies, whereas the magnetic tunnel junctions were more precise at higher frequencies. However, both sensors had a bandwidth greatly exceeding that of traditional spaceborne magnetometers. A magnetometer employing the magnetic tunnel junctions from this work is currently included as payload onboard the Vietnamese satellite F-1 scheduled for launch this year. A magnetometer using magnetoresistive sensors – planar Hall effect sensors, magnetic tunnel junctions, or both – enables a mass reduction of more than two orders of magnitudes compared with traditional systems.

This thesis includes a study of a touch-free sensor systems and different principles for measuring a magnetic field. An in-depth study was conducted to describe two important principles in these contexts, i.e. Magnetoresistance principle and the Hall Effect principle. A market evaluation of different sensor chips developed on these principles was conducted. Furthermore, the study should be linked to existing principles to determine the position of a rotating axis. Function tests show that the performance requirement for each component was met. The results based on verification tests show that it is important to have a better mechanical connection between drive and device. Temperature tests show that the system meets the project specification at room temperature, but large angular deviations occur in temperature change, especially when driving with short steps. This thesis can be continued by reprogramming the source code and developing new software that can control more parameters and make it more accurate at positioning. Another recommendation would be to investigate and compare other sensor chips because there are several sensors that can apply to the system. Further improvements can be made by performing more tests on the system.
Examensarbetet innefattar en studie om beröringsfritt givarsystem och olika principer för att mäta ett magnetfält. En fördjupad litteraturstudie utfördes för att förklara två viktiga principer i dessa sammanhang d.v.s. magnetoresistiva principen och hallgivarprincipen. En marknadsutvärdering av olika sensor-chip som utvecklats enligt dessa principer genomfördes. Vidare ska studien kopplas till kända principer för att bestämma positionen för en roterande axel. Funktionstester visar att prestandakravet för varje komponent uppfylldes. Resultaten baserade på verifieringstester visar att det är viktigt att ha en bättre mekanisk koppling mellan drivdon och enhet. Temperaturtester visar att systemet uppfyller projektets kravspecifikation vid rumstemperaturen men det uppkommer stora vinkelavvikelser vid temperaturförändring framför allt vid körning med korta steg. Detta arbete kan fortsättas genom omprogrammering av källkoden och utveckling av ny programvara som kan styra fler parametrar och göra det mer exakt vid positionsbestämning. En annan rekommendation skulle vara att undersöka och jämföra andra sensorchip eftersom det finns flera sensorer som kan tillämpa i systemet. Ytterligare förbättringar kan göras genom att utföra fler tester på systemet.

Thesis advisor: Fazel Tafti
Since the idea of topology was realized in real materials, the hunt is on for new candidates of topological semimetals with novel electromagnetic responses. For example, topological states can be highly conductive due to a topological protection, which can be destroyed in a magnetic field and lead to an extremely high magnetoresistance. In Weyl semimetals, a transverse current that would usually require a magnetic field to emerge, can be generated by intrinsic Berry curvature without a magnetic field -- the celebrated anomalous Hall effect. In this dissertation, both phenomena mentioned above are studied in rare-earth monopnictides and RAlX material family (R=rare-earths, X=Ge/Si), respectively. The monopnictides are ideal for the study of extreme magnetoresistance because of their topological transitions and abundant magnetic phases. In LaAs, we untied the connection between topological states and the extreme magnetoresistance, the origin of which is clarified. In HoBi, we found an unusual onset of extreme magnetoresistance controlled by a magnetic phase dome. On the other hand, RAlX material family is a new class of Weyl semimetals breaking both inversion and time-reversal symmetries. In particular, in PrAlGeₓSi₁₋ₓ (x=0-1), we unveiled the first transition from intrinsic to extrinsic anomalous Hall effect in ferromagnetic Weyl semimetals, and the role of topology is discussed. In CeAlSi, we found that the Fermi level can be tuned as close as 1 meV away from the Weyl nodes; moreover, a novel anomalous Hall response appears only when the Fermi level is tuned to be near the Weyl nodes. Thus, we established a new transport response solely induced by Weyl nodes
Thesis (PhD) — Boston College, 2021
Submitted to: Boston College. Graduate School of Arts and Sciences
Discipline: Physics

In this work, we analyzed samples of thin films Ni81Fe19 and Pd with ZnO spacer. Ni81Fe19 is a ferromagnet with a low saturation magnetic field. Pd is a normal metal with high spinorbit coupling, much used in spin Hall effect and inverse spin Hall effect studies. ZnO is a semiconductor whose role is to reduce the charge current between layers. The sample have 5 nm of Ni81Fe19, 3 nm of Pd, and 2 nm of ZnO, with dimensions of 0.4 mm x 8 mm, deposited by magnetron sputtering. Using spin pumping we analyze the signal of the continuous voltage induced by ferromagnetic resonance. These samples the measured signal is a consequence of anisotropic magnetoresistance, anomalous Hall effect and inverse spin Hall effect. The thicknesses used contributes to a predominant inverse spin Hall effect signal. The ZnO spacer layer 2 nm reduces the effects of spin rectification, while maintaining spin current transfer.
Neste trabalho analisamos amostras de filmes finos de Ni81Fe19 e Pd separados por ZnO. O Ni81Fe19 foi escolhido por ser um ferromagneto com baixo campo magnético de saturação. O Pd é um metal normal com alto acoplamento spin-órbita, muito usado em estudos de efeito Hall de spin e efeito Hall de spin inverso. O ZnO é um semicondutor com o papel de diminuir a transferência de corrente de carga entre as camadas. As amostras tem espessura de 5 nm de Ni81Fe19, 3 nm de Pd e 2 nm de ZnO, com dimensões de 0,4 mm x 8 mm, depositadas por magnetron sputtering. Através da técnica de spin pumping analisamos o sinal de tensão contínua induzida por ressonância ferromagnética. Nestas amostras o sinal medido é consequência de efeitos de magnetorresistência anisotrópica, efeito Hall anômalo e efeito Hall de spin inverso. As espessuras utilizadas permitem um sinal de efeito Hall de spin inverso predominante. A camada espaçadora de 2nm de ZnO reduz os efeitos de retificação de spin, mantendo a transferência de corrente de spin.

This thesis presents transverse magnetoresistance (MR) and Hall resistivity measurements of nickel thin films at temperatures between 280 and 455 K and pressures up to 6 GPa. An experimental system was developed for conducting precise magnetotransport measurements using the current reversal and van der Pauw techniques in combination with a 10 T superconducting magnet. Polycrystalline Ni_0.985O_0.015 thin film samples were manufactured with preexisting point contacts allowing highly reproducible magnetotransport measurements at pressure in the diamond anvil cell (DAC).

The magnetic resistivity above the technical saturation of the magnetization was found to decrease linearly to the highest applied fields, 10 T, while the field derivative, 0.010-0.018 µΩ cm T^-1 between 280 and 316 K, increased with temperature and decreased with pressure. The decrease in the magnetoresistance is attributed to spin wave damping of electron-magnon scattering processes at high fields. The magnon mass, 535(14) meV Ų at 0 K and 0 GPa, determined from longitudinal magnetic resistivity theory is a slightly increasing function of pressure. Correlation between the zero field resistivity and the extraordinary Hall coefficient (EHC) confirmed side jump scattering as the dominant diffusion mechanism at 0 GPa, however, skew scattering was found to become increasingly important with pressure.

The effect of oxygen and pressure on the density of states (DOS) at the Fermi level was investigated through total energy band structure calculations using a periodic supercell of 64 atoms to simulate the sample chemistry. The DOS of Ni_0.985O_0.015 at the Fermi level was found to increase by 27% at 10 GPa relative to 0 GPa. However, when compared to the results for pure Ni, decreases of 60% and 23% occurred for the corresponding calculations at 0 and 10 GPa. The relative differences in the magnetic resistivity are attributed to competing effects between the DOS, average magnetic moment and magnon mass.

The technique developed for conducting magnetotransport measurements at pressure is applicable to the study of electronic diffusion in ferromagnets as well as geophysical problems such as the geodynamo.

This thesis consists of two parts. The first part considers the effect of microwave radiation on magnetotransport in high quality GaAs/AlGaAs heterostructure two dimensional electron systems. The effect of microwave (MW) radiation on electron temperature was studied by investigating the amplitude of the Shubnikov de Haas (SdH) oscillations in a regime where the cyclotron frequency $\omega_{c}$ and the MW angular frequency $\omega$ satisfy $2\omega \leq \omega_{c} \leq 3.5\omega$. The results indicate negligible electron heating under modest MW photoexcitation, in agreement with theoretical predictions. Next, the effect of the polarization direction of the linearly polarized MWs on the MW induced magnetoresistance oscillation amplitude was investigated. The results demonstrate the first indications of polarization dependence of MW induced magnetoresistance oscillations. In the second part, experiments on the magnetotransport of three dimensional highly oriented pyrolytic graphite (HOPG) reveal a non-zero Berry phase for HOPG. Furthermore, a novel phase relation between oscillatory magneto- and Hall- resistances was discovered from the studies of the HOPG specimen.

Les dispositifs spintroniques exploitent le degré de liberté du spin électronique pour traiter l'information. Dans cette thèse, nous étudions les propriétés de transport quantique dépendant du spin pour optimiser les performances des composants associés. Par l’approche ab initio, nous calculons la magnétorésistance à effet tunnel (tunneling magnetoresistance, TMR), l’effet Hall de spin (spin Hall effect, SHE) et l’efficacité de l’injection de spin (spin injection efficiency, SIE). Nous montrons ainsi que les métaux lourds (heavy metals, HM) influencent la TMR dans des jonctions tunnel magnétiques (magnetic tunnel junctions, MTJs) à base de MgO. L’utilisation de W, Mo, ou Ir peut améliorer la TMR. De plus, le dopage par substitution aide à optimiser le SHE dans les HMs, ce qui renforce les angles de Hall de spin (SHA) pour rendre plus efficace le renversement d’aimantation par couple spin-orbite (spin-orbit torque, SOT) dans les MTJ. Afin de contourner les problèmes induits par le désaccord de maille entre couches ferromagnétiques et MgO, nous avons conçu une MTJ basée sur l'hétérojonction VSe₂/MoS₂ de van der Waals (vdW) et calculons la TMR à température ambiante. L’apparition d’effets de résonance tunnel permet d’utiliser la tension appliquée pour moduler la TMR dans cette structure. Nous proposons également d’y favoriser le SOT en utilisant des matériaux 2D avec un fort SHE. MoTe₂ et WTe₂ apparaissent comme de bons candidats. Ces dichalcogénures de métaux de transition (transition metal dichalcogenides, TMDC) présentent un fort SHE ainsi que de grands SHA grâce à leur faible conductivité électrique. Enfin, motivés par la demande d'un dispositif commutable bidimensionnel à grande longueur de diffusion spin, nous étudions un système d'injection de spin dans le silicène et obtenons des SIE élevés sous tension appliquée. L’ensemble de ces travaux apportent un éclairage pour la recherche de nouveaux dispositifs spintroniques
Spintronics devices manipulate the electron spin degree of freedom to process information. In this thesis, we investigate spin-dependent quantum transport properties to optimize the performances of spintronics devices. Through ab initio approach, we research the tunneling magnetoresistance (TMR), spin Hall effect (SHE), as well as spin injection efficiency (SIE). It has been demonstrated that heavy metals (HMs) are able to modulate TMR effects in MgO-based magnetic tunnel junctions (MTJs), and tungsten, molybdenum, and iridium are promising to enhance TMR. Moreover, substitutional atom doping can effectively optimize SHE of HMs, which would strengthen spin Hall angles (SHAs) to achieve efficient spin-orbit torque (SOT) switching of MTJs. To eliminate the mismatch between ferromagnetic and barrier layers in MgO-based MTJs, we design the MTJ with bond-free van der Waals (vdW) heterojunction VSe₂/MoS₂ and report the room-temperature TMR. The occurrence of quantum-well resonances enables voltage control to be an effective method to modulate TMR ratios in vdW MTJ. We put forward the idea of SOT vdW MTJ, which employs SOT to switch vdW MTJ and requires vdW materials with strong SHE. Research on MoTe₂ and WTe₂ verifies the possibility of realizing this idea. Both of them are layered transition metal dichalcogenides (TMDC) and exhibit strong SHEs, as well as large SHAs thanks to their low electrical conductivity. Lastly, motivated by the demand of a two-dimensional (2D) switchable device with long spin diffusion length, we construct the spin injection system with silicene monolayer, and reveal high SIEs under electric fields. Works in this thesis would advance the research of spintronics devices

Les etudes presentees dans ce memoire concernent le transport d'electrons polarises en spin dans les multicouches magnetiques et les effets qui en decoulent : la magnetoresistance geante dans les systemes metalliques et la magnetoresistance tunnel dans les systemes metal/oxyde. La magnetoresistance geante de multicouches nife/cu est etudiee dans les deux geometries de courant (planaire et perpendiculaire aux interfaces). Dans ces systemes, l'insertion de fines couches de co aux interfaces a pour effet de modifier le couplage indirect entre couches magnetiques successives et entraine une augmentation de l'amplitude de magnetoresistance. Parallelement, une etude de la variation angulaire de la resistance perpendiculaire a ete menee dans des vannes de spin a base de femn. Elle permet de confirmer le role predominant des electrons de caractere s et du mecanisme de diffusion dependante du spin dans le phenomene de magnetoresistance geante. L'effet tunnel d'electrons polarises en spin a ete etudie a la fois experimentalement et theoriquement. Les premiers resultats de caracterisations structurale, magnetique et de transport de multicouches discontinues (co/zro#2)#n sont presentes en fonction de l'epaisseur des couches magnetiques et des traitements thermiques. D'un point de vue theorique, nous avons etudie la magnetoresistance de jonctions magnetiques planaires de la forme mom' (m, m'=metaux ferromagnetiques, o=barriere d'oxyde) : introduction de couches antireflet selectives en spin aux interfaces et influence des epaisseurs des electrodes magnetiques.

Cette these presente une etude par des mesures galvanomagnetiques (resistivite, magnetoresistance, effet hall) des proprietes de transport electrique des monopnictures et monochalcogenures de neptunium (de structure nacl), de la solution solide pusb(1-x)te(x), et du compose intermetallique nppt3. Pour une meilleure comprehension des phenomenes physiques nos mesures sont discutees en etroite association avec les resultats obtenus par la diffraction des neutrons, l'aimantation et la spectroscopie mossbauer. L'etablissement de l'ordre antiferromagnetique triple-k de type i pour les monopnictures npas, npsb et npbi induit l'ouverture d'un gap dans la surface de fermi qui fait brusquement chuter le nombre de porteurs de charge et se traduit par une brutale augmentation de la resistivite. Dans le cas de npbi qui a la plus faible resistivite a temperature ambiante, l'ouverture du gap est si importante que ce compose devient semiconducteur. Il n'est pas aise de trancher de maniere definitive sur la nature du transport electrique des monochalcogenures de neptunium, il apparait cependant de maniere claire que ces composes sont des semi-metaux a temperature ambiante tandis qu'a basse temperature un caractere semiconducteur devient preponderant dans le cas de nps, alors que npte tendrait plutot vers un comportement metallique. Dans le cas de la solution solide pusb(1-x)te(x), il apparait que l'addition du tellure n'est pas simplement une dilution continue de pute non magnetique dans pusb, mais implique des changements fondamentaux dans les mecanismes d'echange induits par le changement de la concentration en electron. Le comportement kondo est present qu'elle que soit la concentration en tellure. Pour le compose nppt3 nous avons pu etablir son diagramme de phase magnetique a l'aide de mesures de resistivite sous champ magnetique et de fixer la temperature d'ordre antiferromagnetique t#n=30 k

Дисертаційна робота присвячена дослідженню електрофізичних, магніторезистивних, магнітооптичних властивостей та ефекту Холла в плівкових системах на основі металу (Fe) і напівпровідника (Ge) в умовах фазоутворення. У плівкових сплавах, сформованих на основі відпалених до 900−1070 К тришарових плівок Fe(5−10 нм)/Ge(2−25 нм)/Fe(15−50 нм), в залежності від співвідношення концентрацій атомів окремих компонент утворюються магнітні плівки германідів заліза Fe2Ge, FeGe і FeGe2 із середніми розмірами кристалітів 15–30 нм. Порівняння експериментальних величин питомого опору двошарових плівкових систем Ge/Fe/П із розрахунковими на основі моделі, в якій зберігається індивідуальність окремих шарів, свідчать про те, що відміну між цими величинами можна пояснити ефектом утворення екситонів Ваньє−Мотта на основі 4 % електронів провідності. Перехід плівки германіду заліза із аморфного стану в кристалічний відбувається при температурах Та→к = 560−590 К в залежності від товщини плівки. Формування термостабільних (ТКО ~ 10−4 К−1) фаз FeGe і FeGe2 по всьому об’єму зразка приводить до зростання величини МО від 0,02–0,04% у невідпалених системах до 0,30–0,44 % у відпалених до 900 К зразках. Установлено, що у системах на основі плівок Fe і Ge, спостерігається залежність кута Керра від індукції магнітного поля у вигляді прямокутної петлі гістерезису, що свідчить про реалізацію двох магнітних станів і швидкодію чутливих елементів приладів у магнітному полі. Експериментально встановлено, що величина сталої Холла для двошарових плівок на основі Fe і Ge (6–11)·10−9 м3/Кл при зростанні індукції магнітного поля від 0 мТл до 100 мТл. При збільшенні інтервалу термообробки плівкових зразків до 570 К стала Холла зменшується від 11·10−9 м3/Кл до 6·10−9 м3/Кл. Досліджені властивості тонких плівок нітриду вуглецю як захисних покриттів для плівкових чутливих елементів на основі германідів металів.
Диссертация посвящена исследованию электрофизических, магниторезистивных, магнитооптических свойств и эффекта Холла в пленочных системах на основе металла (Fe) и полупроводника (Ge) при фазообразовании. Изучение прoцесов фазообразования в двухкомпонентных пленочных материалах на основе Fe и Ge, сформированных методом послойной конденсации с последующей термообработкой в интервале температур 300–1070 К, позволили устаовить, что в пленочных сплавах, сформированных на основе отожжённых до 900–1070 К трехслойных пленок Fe (5–10 нм)/Ge (2–25 нм)/Fe (15–50 нм), в зависимости от соотношения концентраций атомов отдельных компонент образуются магнитные пленки германидов железа Fe2Ge, FeGe и FeGe2 со средними размерами кристаллитов 15–30 нм. Сравнение экспериментальных величин удельного сопротивления двухслойных плёночных систем Ge/Fe/П с расчетными на основе модели, в которой сохраняется индивидуальность отдельных слоёв, свидетельствует о том, что отличие между этими величинами можно объяснить эффектом образования экситонов Ванье–Мотта на основе 4 % электронов проводимости. Переход пленки германида железа из аморфного состояния в кристаллическое происходит при температурах Та→к = 560–590 К в зависимости от толщины образца. Формирования термостабильных (ТКС ~ 10–4 К–1) фаз FeGe и FeGe2 по всему объему образца приводит к росту величины МО от 0,02–0,04 % в неотожжённых системах до 0,30–0,44 % в отожженных до 900 К образцах. Наблюдается зависимость угла Керра от индукции магнитного поля в виде прямоугольной петли гистерезиса, что свидетельствует о реализации двух магнитных состояний и быстродействии чувствительных элементов устройств в магнитном поле. Получено, что постоянная Холла для двухслойных пленок на основе Fe и Ge имеет величину (6–11) .10-9 м3/Кл при росте индукции магнитного поля от 0 до 100 мТл. При увеличении интервала термообработки пленочных образцов до 570 К постоянная Холла уменьшается от 11·10−9 м3/Кл до 6·10−9 м3/Кл. Исследованы свойства тонких пленок углерода и нитрида углерода как защитных покрытий для пленочных чувствительных элементов. Показано, что плотность пленки CNx/Si (100) уменьшается при снижении температуры подложки и увеличении толщины образца, а максимальная концентрация атомов алмазоподобной структуры наблюдается в области подложки, а при толщине d ≥ 2 нм. Пленка однородная с постоянной плотностью, что свидетельствует о соответствии пленок CNx требованиям к покрытиям, которые могут быть использованы как защитные термостойкие слои для чувствительных элементов сенсорной электроники на основе силицидов и германидов металлов.
The thesis is devoted to systematic research of electrophysical, magnetoresistive, magneto – optical galvanomagnetic properties of film systems on the basis of metal (Fe) and semiconductor (Ge) in the conditions of phase formation. In film alloys formed based on annealed to 900–1070 K three-layer films Fe(5–10 nm)/Ge(2–25 nm)/Fe(15–50 nm), depending on the ratio of the concentrations of atoms of individual components, magnetic films are formed iron germanides Fe2Ge, FeGe and FeGe2 with average crystallite sizes of 15–30 nm. Comparison of resistivity of two-layer Ge/Fe/S (S-substrate) film systems with calculated ones based on the model, which preserves the individuality of individual layers, indicates that the difference between these values can be explained by the effect of Vanier-Mott excitons based on 4 % conduction electrons. The transition of the iron germanide film from the amorphous state to the crystalline state occurs at temperatures Tа→c = 560–590 K depending on the film thickness. The formation of thermostable (TRC ~ 10–4 K–1) phases of FeGe and FeGe2 over the entire volume of the sample leads to an increase in the value of MR from 0.02–0.04 % in non-annealed systems to 0.30–0.44 % in annealed to 900 K samples. It is established that in systems based on Fe and Ge films, the dependence of the angle Θ on the induction of the magnetic field in the form of a "stepped hysteresis loop" is observed, which indicates the realization of two magnetic states and the speed of sensitive elements of functional devices in a magnetic field. It has been experimentally established that the value of the Hall constant for two-layer films based on Fe and Ge (6–11)·10–9 m3/C with increasing magnetic field induction from 0 mT to 100 mT. When increasing the heat treatment interval of film samples to 570 K, the value of the Hall constant decreases from 11·10–9 m3/C to 6·10–9 m3/C. The properties of thin films of carbon and carbon nitride as protective coatings for film sensitive elements have been studied.

Les proprietes structurales, magnetiques et de transport d'alliages heterogenes ni#xag#1#-#x et co#xag#1#-#x elabores par pulverisation cathodique ont ete etudiees. Ces alliages, formes de deux composantes immiscibles, sont constitues de nanoparticules magnetiques (co ou ni) noyees dans une matrice metallique non magnetique. Par des recuits, on peut faire evoluer la nanostructure de ces alliages en activant thermiquement la demixtion des deux elements. Des mesures d'exafs au seuil du co et du ni ont permis de caracteriser l'environnement structural local des atomes magnetiques et via une modelisation, de determiner une taille structurale des precipites magnetiques dans les etats bruts et recuits. Des mesures magnetiques ont mis en evidence des comportements ferromagnetiques, superparamagnetiques ou de type verres de spin dans ces alliages avec la particularite pour le ni d'une grande sensibilite des proprietes magnetiques a la taille des particules. En effet, contrairement au superparamagnetisme habituel ou le moment des particules individuelles peut etre assimile a un spin macroscopique (cas du coag), les fluctuations magnetiques intra-particules joue un role crucial pour les niag. Des effets de magnetoresistance importante sont observes dans ces alliages avec deux contributions principales : la magnetoresistance dite geante, associee a la rotation relative des moments de grains voisins, et celle de desordre de spin associee aux fluctuations magnetiques (ondes de spin ou superparamagnetisme des grains les plus petits). Cette seconde distribution est dominante pour le ni. Une theorie quantique de la magnetoresistance de ces alliages a ete proposee. Elle decrit pour la premiere fois les effets de taille dans ces systemes heterogenes. Elle montre qu'il existe une taille optimale qui donne le maximum de magnetoresistance. Cette taille depend du role relatif de la diffusion dependante du spin en surface et dans le volume des particules.

In dieser Arbeit werden das Wachstum mittels Molekularstrahlepitaxie und die Eigenschaften der Ferromagneten Fe und Fe_3Si auf niedrig-symmetirschen GaAs(113)A-Substraten studiert. Drei wichtige Aspekte werden untersucht: (i) Wachstum und strukturelle Charakterisierung, (ii) magnetische Eigenschaften und (iii) Magnetotransporteigenschaften der Fe und Fe_3Si Schichten auf GaAs(113)A-Substraten. Das Wachstum der Fe- und Fe_3Si-Schichten wurde bei einer Wachstumstemperatur von = bzw. 250 °C optimiert. Bei diesen Wachstumstemperaturen zeigen die Schichten eine hohe Kristallperfektion und glatte Grenz- und Oberflächen analog zu [001]-orientierten Schichten. Weiterhin wurde die Stabilität der Fe_(3+x)Si_(1-x) Phase über einen weiten Kompositionsbereich innerhalb der Fe_3Si-Stoichiometry demonstriert. Die Abhängigkeit der magnetischen Anisotropie innerhalb der Schichtebene von der Schichtdicke weist zwei Bereiche auf: einen Beresich mit dominanter uniaxialer Anisotropie für Fe-Schichten = 70 MLs. Weiterhin wird eine magnetische Anisotropie senkrecht zur Schichtebene in sehr dünnen Schichten gefunden. Der Grenzflächenbeitrag sowohl der uniaxialen als auch der senkrechten Anisotropiekonstanten, die aus der Dickenabhängigkeit bestimmt wurden, sind unabhängig von der [113]-Orientierung und eine inhärente Eigenschaft der Fe/GaAs-Grenzfläche. Die anisotrope Bindungskonfiguration zwischen den Fe und den As- oder Ga-Atomen an der Grenzfläche wird als Ursache für die uniaxiale magnetische Anisotropie betrachtet. Die magnetische Anisotropie der Fe_3Si-Schichten auf GaAs(113)A-Substraten zeigt ein komplexe Abhängigkeit von der Wachstumsbedingungen und der Komposition der Schichten. In den Magnetotransportuntersuchungen tritt sowohl in Fe(113)- als auch in Fe_3Si(113)-Schichten eine antisymmetrische Komponente (ASC) im planaren Hall-Effekt (PHE) auf. Ein phänomenologisches Modell, dass auf der Kristallsymmetrie basiert, liefert ein gute Beschreibung sowohl der ASC im PHE als auch des symmetrischen, anisotropen Magnetowiderstandes. Das Modell zeigt, dass die beobachtete ASC als Hall-Effekt zweiter Ordnung beschreiben werden kann.
In this work, the molecular-beam epitaxial growth and properties of ferromagnets, namely Fe and Fe_3Si are studied on low-symmetric GaAs(113)A substrates. Three important aspects are investigated: (i) growth and structural characterization, (ii) magnetic properties, and (iii) magnetotransport properties of Fe and Fe_3Si films on GaAs(113)A substrates. The growth of Fe and Fe_3Si films is optimized at growth temperatures of 0 and 250 degree Celsius, respectively, where the layers exhibit high crystal quality and a smooth interface/surface similar to the [001]-oriented films. The stability of Fe_(3+x)Si_(1-x) phase over a range of composition around the Fe_3Si stoichiometry is also demonstrated. The evolution of the in-plane magnetic anisotropy with film thickness exhibits two regions: a uniaxial magnetic anisotropy (UMA) for Fe film thicknesses = 70 MLs. The existence of an out-of-plane perpendicular magnetic anisotropy is also detected in ultrathin Fe films. The interfacial contribution of both the uniaxial and the perpendicular anisotropy constants, derived from the thickness-dependent study, are found to be independent of the [113] orientation and are hence an inherent property of the Fe/GaAs interface. The origin of the UMA is attributed to anisotropic bonding between Fe and As or Ga at the interface, similarly to Fe/GaAs(001). The magnetic anisotropy in Fe_3Si on GaAs(113)A exhibits a complex dependence on the growth conditions and composition. Magnetotransport measurements of both Fe(113) and Fe_3Si(113) films shows the striking appearance of an antisymmetric component (ASC) in the planar Hall effect (PHE). A phenomenological model based on the symmetry of the crystal provides a good explanation to both the ASC in the PHE as well as the symmetric anisotropic magnetoresistance. The model shows that the observed ASC component can be ascribed to a second-order Hall effect.

This master's thesis focuses on the utilization of an artificially created weak magnetic field for navigation in 3D space. The theoretical part of this work deals with the general properties of the magnetic field and with its description. The next section of the theoretical part contains an overview of measuring principles for magnetic field measurements. Based on various types of measuring principles, the thesis elaborates on commercially available miniature sensors for magnetic field measurement with a measuring range up to 10 mT. The work focuses mainly on the magnetoresistive principle and fluxgate sensors. Furthermore, the theoretical part contains descriptions of methods for modeling the magnetic field of simple permanent magnets and various magnet assemblies. Lastly, the theoretical part involves a patent search of devices used for locating magnets that are installed in an intramedullary nail, which is used in intramedullary stabilization used on fractures of human bones. By locating the magnet in the nail, it is possible to precisely determine the position of the mounting holes. The practical part of the thesis deals with the analysis of magnetic field behavior in the vicinity of various magnetic assemblies, which were modeled in COMSOL Multiphysics using the finite element method. The models were created with the aim of analysing the behaviour of the magnetic field in the vicinity of the magnets and at the same time to find possible analytical functions that could be used to determine the position of the magnet in space relative to the probe. The result of this work is an analysis of various assemblies, which contains graphs of different dependencies and prescription of polynomial functions that approximate these dependencies. Another part of the thesis is the design of a probe that serves to locate the magnetic target. The work describes two possible methods of localization. For the differential method, a user interface in LabVIEW was created. The probe based on this method is fully capable of locating the magnet in the 2D plane. The state space search method is described only in theory.

The present thesis is about the investigation of ferromagnetic thin film systems with respect to exchange coupling, magnetization reversal behavior and effects appearing in magnetic heterostructures, namely the exchange bias and the giant magnetoresistance effect. For this purpose, DC magnetron sputtered thin films and multilayers with perpendicular magnetic anisotropy were prepared on single crystalline and rigid as well as flexible amorphous substrates. The first part concentrates on magnetic data storage applications based on the combination of the concept of bit patterned media and three dimensional magnetic memory, consisting of at least two exchange decoupled ferromagnetic storage layers. Here, [Co/Pt] multilayers, revealing different magnetic anisotropies, have been applied as storage layers and as spacer material Pt and Ru was employed. By the characterization of the magnetization reversal behavior the exchange coupling in dependence of the spacer layer thickness was studied. Furthermore, with regard to the concept of bit patterned media, the layers were also grown on self-assembled silica particles, leading to an exchange decoupled single-domain magnetic dot array, which was studied by magnetic force microscope imaging and angular dependent magneto-optic Kerr effect magnetometry to evaluate the reversal mechanism and its dependence on the array dimensions, mainly the diameter of the silica particles and layer thicknesses. To complete the study, micromagnetic simulations were performed to access smaller dimensions and to investigate the dependence of intralayer as well as interlayer coupling on the magnetization reversal of the dot array with multiple storage layers. The second part focuses on the investigation of the giant magnetoresistance effect in systems with perpendicular magnetic anisotropy, where L10 -chemically ordered FePt alloys and [Co/Pt] as well as [Co/Pd] multilayers were utilized. In case of FePt, where high temperatures during the deposition are necessary to induce the chemical ordering, diffusion and alloying of the spacer material often prevent a sufficient exchange decoupling of the ferromagnetic layers. However, with Ru as spacer material a giant magnetoresistance effect could be achieved. Large improvements of the magnetoresistive behavior of such trilayer structures are presented for [Co/Pt] and [Co/Pd] multilayers, which can be deposited at room temperature not limiting the choice of spacer as well as substrate material. Furthermore, in systems consisting of one ferromagnet with perpendicular magnetic anisotropy and one ferromagnet with in-plane magnetic easy axis, a linear and almost hysteresis-free field dependence of the electrical resistance was observed and the behavior for various thickness series has been intensively studied. Finally, the corrosion resistance in dependence of the capping layer material as well as the magnetoresistance of a strained flexible pseudo-spin-valve structure is presented. In addition, in chapter 2.5.2 an experimental study of an improved crystal growth of FePt at comparable low temperatures by molecular beam epitaxy and further promoted by a surfactant mediated growth using Sb is shown. Auger electron spectroscopy as well as Rutherford backscattering spectrometry were carried out to confirm the surface segregation of Sb and magnetic characterization revealed an increase of magnetic anisotropy in comparison to reference layers without Sb
Die vorliegende Dissertation beschäftigt sich mit der Untersuchung ferromagnetischer Dünnschichtsysteme im Hinblick auf die Austauchkopplung, das Ummagnetisierungsverhalten und Effekte wie z.B. den Exchange Bias Effekt oder den Riesenmagnetwiderstandseffekt (GMR), welche in derartigen Heterostrukturen auftreten können. Die Probenpräparation erfolgte mittels DC Magnetronsputtern, wobei auf einkristallinen aber auch flexiblen sowie starren amorphen Substraten abgeschieden wurde. Im ersten Teil der Arbeit werden Untersuchungen mit dem Hintergrund einer Anwendung als magnetischer Datenträger vorgestellt. Konkret werden hier die Konzepte Bit Patterned Media (BPM) und 3D Speicher miteinander kombiniert. Letzteres Konzept basiert auf der Verwendung wenigstens zweier austauschentkoppelter ferromagnetischer Schichten, für welche [Co/Pt] Multilagen mit unterschiedlicher magnetischer Anisotropie verwendet wurden. Als Zwischenschichtmaterial diente Pt und Ru. Durch die Charakterisierung des Ummagnetisierungsverhaltens wurde die Austauschkopplung in Abhängigkeit der Zwischenschichtdicke untersucht. Darüber hinaus wurden jene Schichtstapel zur Realisierung des BPM-Konzeptes auf selbstangeordnete SiO2 Partikel mit unterschiedlichen Durchmessern aufgebracht, durch welche sich lateral austauschentkoppelte, eindomänige magnetische Nanostrukturen erzeugen lassen. Zur Untersuchung des Ummagnetisierungsverhaltens und der jeweiligen Größenabhängigkeiten (maßgeblich Durchmesser und Schichtdicke) wurden diese mittels Magnetkraftmikroskopie sowie winkelabhängiger magnetooptischer Kerr Effekt Magnetometrie untersucht. Zur weiteren Vertiefung des Verständnisses noch kleinerer Strukturgrößen erfolgten mikromagnetische Simulationen, bei denen die magnetischen Wechselwirkungen lateral (benachbarte 3D Elemente) als auch vertikal (Wechselwirkungen ferromagnetischer Schichten innerhalb eines 3D Elementes) im Interesse standen, sowie deren Auswirkungen auf das Ummagnetisierungsverhalten des gesamten Feldes. Der Fokus des zweiten Teils liegt auf der Untersuchung des Riesenmagnetwiderstandseffektes in Systemen mit senkrechter Sensitivität. Dafür sind ferromagnetische Schichten mit senkrechter magnetischer Anisotropie nötig, wobei hier die chemisch geordnete L10-Phase der FePt Legierung und [Co/Pt] sowie [Co/Pd] Multilagen Anwendung fanden. Für eine chemische Ordnung der FePt Legierung sind hohe Temperaturen während der Schichtabscheidung notwendig, welche eine hinreichende Austauschentkopplung beider ferromagnetischer Schichten meist nicht gewährleisten. Grund dafür sind einsetzende Diffusionsprozesse als auch Legierungsbildungen mit dem Zwischenschichtmaterial. In der vorliegenden Arbeit konnte der GMR Effekt daher ausschließlich mit einer Ru Zwischenschicht in FePt basierten Trilagensystemen nachgewiesen und charakterisiert werden. Enorme Verbesserungen der magnetoresistiven Eigenschaften werden im Anschluss für [Co/Pt] und vor allem [Co/Pd] Multilagen vorgestellt. Diese Schichtsysteme mit senkrechter magnetischer Anisotropie können bei Raumtemperatur präpariert werden und stellen daher keine weiteren Anforderungen an das Zwischenschichtmaterial sowie die verwendeten Substrate. Hier wurden neben Systemen mit ausschließlich senkrechter magnetischer Anisotropie auch Systeme mit gekreuzten magnetischen Anisotropien intensiv untersucht, da diese durch einen linearen und weitgehend hysteresefreien R(H) Verlauf imHinblick auf Sensoranwendungen enorme Vorteile bieten. Letztendlich wurde die Korrosionsbeständigkeit in Abhängigkeit des Deckschichtmaterials als auch die mechanische Belastbarkeit von auf flexiblen Substraten abgeschiedenen GMR-Schichtstapeln untersucht. Zusätzlich wird in Kapitel 2.5.2 eine experimentelle Studie zum Surfactant-gesteuerten Wachstum der FePt Legierung mittels Molekularstrahlepitaxie vorgestellt. Als Surfactant dient Sb, wodurch die Kristallinität bei geringer Depositionstemperatur deutlich verbessert werden konnte. Die Oberflächensegregation von Sb wurde mittels Auger Elektronenspektroskopie und Rutherford Rückstreuspektrometrie verifiziert und die Charakterisierung magnetischer Eigenschaften belegt einen Anstieg der magnetischen Anisotropieenergie im Vergleich zu Referenzproben ohne Sb

The present thesis is about the investigation of ferromagnetic thin film systems with respect to exchange coupling, magnetization reversal behavior and effects appearing in magnetic heterostructures, namely the exchange bias and the giant magnetoresistance effect. For this purpose, DC magnetron sputtered thin films and multilayers with perpendicular magnetic anisotropy were prepared on single crystalline and rigid as well as flexible amorphous substrates. The first part concentrates on magnetic data storage applications based on the combination of the concept of bit patterned media and three dimensional magnetic memory, consisting of at least two exchange decoupled ferromagnetic storage layers. Here, [Co/Pt] multilayers, revealing different magnetic anisotropies, have been applied as storage layers and as spacer material Pt and Ru was employed. By the characterization of the magnetization reversal behavior the exchange coupling in dependence of the spacer layer thickness was studied. Furthermore, with regard to the concept of bit patterned media, the layers were also grown on self-assembled silica particles, leading to an exchange decoupled single-domain magnetic dot array, which was studied by magnetic force microscope imaging and angular dependent magneto-optic Kerr effect magnetometry to evaluate the reversal mechanism and its dependence on the array dimensions, mainly the diameter of the silica particles and layer thicknesses. To complete the study, micromagnetic simulations were performed to access smaller dimensions and to investigate the dependence of intralayer as well as interlayer coupling on the magnetization reversal of the dot array with multiple storage layers. The second part focuses on the investigation of the giant magnetoresistance effect in systems with perpendicular magnetic anisotropy, where L10 -chemically ordered FePt alloys and [Co/Pt] as well as [Co/Pd] multilayers were utilized. In case of FePt, where high temperatures during the deposition are necessary to induce the chemical ordering, diffusion and alloying of the spacer material often prevent a sufficient exchange decoupling of the ferromagnetic layers. However, with Ru as spacer material a giant magnetoresistance effect could be achieved. Large improvements of the magnetoresistive behavior of such trilayer structures are presented for [Co/Pt] and [Co/Pd] multilayers, which can be deposited at room temperature not limiting the choice of spacer as well as substrate material. Furthermore, in systems consisting of one ferromagnet with perpendicular magnetic anisotropy and one ferromagnet with in-plane magnetic easy axis, a linear and almost hysteresis-free field dependence of the electrical resistance was observed and the behavior for various thickness series has been intensively studied. Finally, the corrosion resistance in dependence of the capping layer material as well as the magnetoresistance of a strained flexible pseudo-spin-valve structure is presented. In addition, in chapter 2.5.2 an experimental study of an improved crystal growth of FePt at comparable low temperatures by molecular beam epitaxy and further promoted by a surfactant mediated growth using Sb is shown. Auger electron spectroscopy as well as Rutherford backscattering spectrometry were carried out to confirm the surface segregation of Sb and magnetic characterization revealed an increase of magnetic anisotropy in comparison to reference layers without Sb.
Die vorliegende Dissertation beschäftigt sich mit der Untersuchung ferromagnetischer Dünnschichtsysteme im Hinblick auf die Austauchkopplung, das Ummagnetisierungsverhalten und Effekte wie z.B. den Exchange Bias Effekt oder den Riesenmagnetwiderstandseffekt (GMR), welche in derartigen Heterostrukturen auftreten können. Die Probenpräparation erfolgte mittels DC Magnetronsputtern, wobei auf einkristallinen aber auch flexiblen sowie starren amorphen Substraten abgeschieden wurde. Im ersten Teil der Arbeit werden Untersuchungen mit dem Hintergrund einer Anwendung als magnetischer Datenträger vorgestellt. Konkret werden hier die Konzepte Bit Patterned Media (BPM) und 3D Speicher miteinander kombiniert. Letzteres Konzept basiert auf der Verwendung wenigstens zweier austauschentkoppelter ferromagnetischer Schichten, für welche [Co/Pt] Multilagen mit unterschiedlicher magnetischer Anisotropie verwendet wurden. Als Zwischenschichtmaterial diente Pt und Ru. Durch die Charakterisierung des Ummagnetisierungsverhaltens wurde die Austauschkopplung in Abhängigkeit der Zwischenschichtdicke untersucht. Darüber hinaus wurden jene Schichtstapel zur Realisierung des BPM-Konzeptes auf selbstangeordnete SiO2 Partikel mit unterschiedlichen Durchmessern aufgebracht, durch welche sich lateral austauschentkoppelte, eindomänige magnetische Nanostrukturen erzeugen lassen. Zur Untersuchung des Ummagnetisierungsverhaltens und der jeweiligen Größenabhängigkeiten (maßgeblich Durchmesser und Schichtdicke) wurden diese mittels Magnetkraftmikroskopie sowie winkelabhängiger magnetooptischer Kerr Effekt Magnetometrie untersucht. Zur weiteren Vertiefung des Verständnisses noch kleinerer Strukturgrößen erfolgten mikromagnetische Simulationen, bei denen die magnetischen Wechselwirkungen lateral (benachbarte 3D Elemente) als auch vertikal (Wechselwirkungen ferromagnetischer Schichten innerhalb eines 3D Elementes) im Interesse standen, sowie deren Auswirkungen auf das Ummagnetisierungsverhalten des gesamten Feldes. Der Fokus des zweiten Teils liegt auf der Untersuchung des Riesenmagnetwiderstandseffektes in Systemen mit senkrechter Sensitivität. Dafür sind ferromagnetische Schichten mit senkrechter magnetischer Anisotropie nötig, wobei hier die chemisch geordnete L10-Phase der FePt Legierung und [Co/Pt] sowie [Co/Pd] Multilagen Anwendung fanden. Für eine chemische Ordnung der FePt Legierung sind hohe Temperaturen während der Schichtabscheidung notwendig, welche eine hinreichende Austauschentkopplung beider ferromagnetischer Schichten meist nicht gewährleisten. Grund dafür sind einsetzende Diffusionsprozesse als auch Legierungsbildungen mit dem Zwischenschichtmaterial. In der vorliegenden Arbeit konnte der GMR Effekt daher ausschließlich mit einer Ru Zwischenschicht in FePt basierten Trilagensystemen nachgewiesen und charakterisiert werden. Enorme Verbesserungen der magnetoresistiven Eigenschaften werden im Anschluss für [Co/Pt] und vor allem [Co/Pd] Multilagen vorgestellt. Diese Schichtsysteme mit senkrechter magnetischer Anisotropie können bei Raumtemperatur präpariert werden und stellen daher keine weiteren Anforderungen an das Zwischenschichtmaterial sowie die verwendeten Substrate. Hier wurden neben Systemen mit ausschließlich senkrechter magnetischer Anisotropie auch Systeme mit gekreuzten magnetischen Anisotropien intensiv untersucht, da diese durch einen linearen und weitgehend hysteresefreien R(H) Verlauf imHinblick auf Sensoranwendungen enorme Vorteile bieten. Letztendlich wurde die Korrosionsbeständigkeit in Abhängigkeit des Deckschichtmaterials als auch die mechanische Belastbarkeit von auf flexiblen Substraten abgeschiedenen GMR-Schichtstapeln untersucht. Zusätzlich wird in Kapitel 2.5.2 eine experimentelle Studie zum Surfactant-gesteuerten Wachstum der FePt Legierung mittels Molekularstrahlepitaxie vorgestellt. Als Surfactant dient Sb, wodurch die Kristallinität bei geringer Depositionstemperatur deutlich verbessert werden konnte. Die Oberflächensegregation von Sb wurde mittels Auger Elektronenspektroskopie und Rutherford Rückstreuspektrometrie verifiziert und die Charakterisierung magnetischer Eigenschaften belegt einen Anstieg der magnetischen Anisotropieenergie im Vergleich zu Referenzproben ohne Sb.

Cette thèse en cotutelle entre l'Université Joseph Fourier à Grenoble et l'Université Nationale du Vietnam à Hanoi traite de l'étude des propriétés magnétiques et électriques de structures basées sur GdCo et sur des multicouches Fe/Cr. GdCo est un alliage ferrimagnétique dont la composition peut être choisie afin d'obtenir la compensation, c'est à dire une aimantation nette nulle, à une température de compensation inférieure à la température de Curie. Les films ont été déposés par la technique de pulvérisation cathodique magnétron. Ils sont amorphes et possèdent une anisotropie perpendiculaire induite par la croissance. Proche de la température de compensation, l'aimantation spontanée est perpendiculaire et l'imagerie par effet Kerr polaire ainsi que l'effet Hall extraordinaire ont été largement utilisés pour étudier les films dans la gamme (4-300 K) et de 0 à 6 Tesla. Un gradient de composition dans le plan peut être induit et a entrainé l'étude d'une paroi de compensation d'aimantation nulle. Les contributions de Gd et Co à l'effet Hall extraordinaire ont été déterminées. Proche de la compensation, l'effet Hall à haut champ permet d'accéder au régime de spin flop. Des multicouches GdCo/Cu/NiFe pour lesquelles GdCo est à anisotropie perpendiculaire et NiFe à anisotropie planaire ont été élaborées. Elles présentent de la magnétorésistance géante (GMR) dont la valeur ne dépend pas de l'angle entre les aimantations nettes desdeux couches magnétiques.
L'étude de la GMR des multicouches Fe/Cr traite de la contribution des interfaces au mécanisme GMR. En variant l'épaisseur du fer et en recuisant les multicouches, il est possible d'accéder aux contributions d'interface.

Magneto-transport study on high mobility electron systems in both 2D- and 3D- case has attracted intense attention in past decades. This thesis focuses on the magnetoresistance behavior in 3D topological insulator Bi2Te3 and GaAs/AlGaAs 2D electron system at low magnetic field range 0.4T the first drop at T~3.4K to tndium superconductor and considered the second drop at lower temperature as the proximity effect that occurred near the interface between these two materials. On the other hand, GaAs/AlGaAs heterostructure, as a III-V semiconductor family, has been extensively studied for exploring many interesting phenomena due to the extremely high electron mobility up to 10^7 cm^2/Vs. In this thesis, two interesting phenomena are present and discussed in a GaAs/AlGaAs system, which are the electron heating induced tunable giant magnetoresistance study and phase inversion in Shubnikov-de Haas oscillation study, respectively. By applying elevated supplementary dc current bias, we found a tunable giant magnetoresistance phenomenon which is progressively changed from positive to giant negative magnetoresistance. The observed giant magnetoresistance is successfully simulated with a two-term Drude model at all different dc biases, I_{dc}, and temperature, T. In addition, as increasing the dc current bias, a phase inversion behavior was observed in Shubnikov-de Haas oscillation, which was further demonstrated by the simulation with an exponential damped cosine function. This thesis also presents an ongoing project, which is the observation and fabrication of 2D layered materials. The studied 2D layered materials includes graphene, biron nitride, Molybdenum disulfide, etc. At the end, a future work about fabrication of the 2D layered materials devices as well as the suggestion about the measurement are discussed.

碩士
輔仁大學
物理學系
84
Co-Pd alloy films had been made by thermal evaporation method in avacuum about 1*10^-6Torr onto a 0211 Corning glass substrate, held ata temperature of Ts=180C. SEM-EDS device was used to analyze the compositions of a few spots on the film. The in-situ thickness of eachfilm was pre-determined by a quartz thickness monitor. The range of thickness was from 150 to 2500A. Then, the ex-situ thickness of the film is characterized again by a step profiler, Dektak3. In theexperment, the film thickness t shall be referred to as the ex-situthickness. The crystal structure and the average grain size in the filmwas checked by an X-ray diffraction technique, using CuKa ray. For Co35Pd65 films, the thickness dependence of the magnetoresistiveproperties of these films has been measured in the thickness range from150 to 2500A. We have measured the electrical resistivity, anisotropicmagnetoresistance, and saturation magnetization of these films at roomtemperature. The crystal structure and grain size D in the films werealso characterized. Besides, we also have measured the Hall resistivityin the thickness range from 87 to 1690A. Our interest is the thicknessdependence of these quantities.

The anomalous Hall effect (AHE) has been discovered for over a century, but its origin is still highly controversial theoretically and experimentally. In this study, we investigated the scattering effect on the AHE for both exploring the underlying physics and technical applications. We prepared Cox(MgO)100-x granular thin films with different Co volume fraction (34≤x≤100) and studied the interfacial scattering effect on the AHE. The STEM HAADF images confirmed the inhomogeneous granular structure of the samples. As x decreases from 100 to 34, the values of longitudinal resistivity (pxx) and anomalous Hall resistivity (pAHE) respectively increase by about four and three orders in magnitude. The linear scaling relation between the anomalous Hall coefficient (Rs) and the pxx measured at 5 K holds in both the as-prepared and annealed samples, which suggests a skew scattering dominated mechanism in Cox(MgO)100-x granular thin films. We prepared (Fe36/n/Au12/n)n, (Ni36/n/Au12/n)n and (Ta12/n/Fe36/n)n multilayers to study the interfacial scattering effect on the AHE. The multilayer structures were characterized by the XRR spectra and TEM images of cross-sections. For the three serials of multilayers, both the pxx and pAHE increase with n, which clearly shows interfacial scattering effect. The intrinsic contribution decreases with n increases in the three serials of samples, which may be due to the crystallinity decaying or the finite size effect. In the (Fe36/n/Au12/n)n samples, the side-jump contribution increases with nn, which suggests an interfacial scattering-enhanced side jump. In the (Ni36/n/Au12/n)n samples, the side-jump contribution decreases with n increases, which could be explained by the opposite sign of the interfacial scattering and grain boundary scattering contributed side jump. In the (Ta12/n/Fe36/n)n multilayers, the side-jump contribution changed from negative to positive, which is also because of the opposite sign of the interfacial scattering and grain boundary scattering contributed side jump. The interfacial scattering effect on the AHE is much more complicated than surface scattering in thin films or scattering by delta-impurities in bulk-like samples.

碩士
國立臺灣師範大學
物理學系
103
Metallic ferromagnetic materials exhibit anisotropic magnetoresistance (AMR) effect. For Fe, Co, and Ni, the resistivity measured with current parallel to the applied magnetic field is larger than that with current perpendicular to the applied magnetic field. In thin-film forms, two configurations could be distinguished for current perpendicular to the applied field. One is field in the film plane (transverse MR, TMR), and the other is field perpendicular to the plane (perpendicular MR, PMR). In single-composition films, such as Co or Ni films, the effect of longitudinal ML (LMR) is larger than that of TMR, and then the effect of TMR is larger than that of PMR due to ‘Geometric Size Effect’. In recent researches, unusual resistivity in the Pt/yttrium iron garnet (YIG) structure has been reported. The resistivity in the Pt/YIG structure is in the sequence of . Two different theories were proposed to explain this result. The one called the Hybrid MR is that the Pt acquires induced magnetization by YIG layer. The other one called spin Hall MR is that the Pd layer generates spin currents by the spin Hall effect, and the spin current reflects or transmits according the magnetization direction in the YIG layer. In our previous studies, we found that in the Pd/Ni and Pt/Ni multilayer structure. In this study, we found that this result is both thickness and temperature dependent. According to our experiment data, we conclude that this result is associated with the Hybrid MR and the spin Hall magnetoresistance concurrently.

碩士
國立臺灣大學
物理學研究所
87
Abstract We report the magnetization, magneto-resistance and Hall coefficient of epitaxial SrRuO3 films n SrTiO3 (110) and (001) substrates under varied temperatures and magnetic fields in paramagnetic and ferromagnetic states. The SrRuO3 films were grown in-situ by the radio frequency magnetron sputtering technique. The Hall coefficient RH is positive when the temperature is greater than the sign reversal temperature, Tr and reverts to negative when the temperature is below Tr. The Hall resistivity rxy in the paramagnetic state follows the behavior (1 － T/TC)-1. The spontaneous Hall coefficient Rs is negative when the temperature is below T = 130 K. We used the theory of the spontaneous Hall coefficient proposed by Kondo in the paramagnetic state and the theory of the spontaneous Hall coefficient proposed by Irkhin etal. in the ferromagnetic state to discuss its temperature behavior. The analyzed data suggest that the mixed interaction of spin-orbital o f the magnetic electrons in SrRuO3 films play an essential role in the occurrence of the negative value of Rs. On the other hand, YBa2Cu3O7-X/SrRuO3 (96 nm/96 nm) film show ferromagnetic transition at T ~150 K and is superconducting at T = 35 K. The Hall coefficient, RH, is positive at high temperature (T > 125 K). In the negative Hall coefficient regime, the RH decreases and enters a local minimum and reverts to zero at low temperatures for YBa2Cu3O7-X/SrRuO3 films. The pinning characteristic of YBa2Cu3O7-X/SrRuO3 films was discussed in terms of the exiting pinning theories. 1. J. Kondo, Prog. Theoeret. Phys., (Japan) 27, 772 (1962). 2. Yu. P. Irkhin et al., Phys. Stat. Sol. 22, 309, (1967).

博士
國立成功大學
物理學系
105
In this thesis, we separate into two parts: magnetic proximity effect and spin Hall magnetoresistance. In the first part, we investigated the proximity effect in topological insulator (TI) and magnetic insulator bilayer system. (Bi1-xSbx)2Se3/CoFe2O4 (CFO) heterostructure was fabricated using molecular beam epitaxy and pulsed laser deposition system respectively. As revealed from the magnetoresistance measurement, the weak anti-localization (WAL) is strongly suppressed by proximity effect in (Bi1-xSbx)2Se3/CFO interface. Modified Hikama-Larkin-Nagaoka equation was used to fit the WAL results so that the size of surface state gap can be extracted successfully. The temperature-dependent resistance of the heterostructures at small and large perpendicular magnetic fields were also measured and analyzed. The results indicate that the surface band gap can be induced in TI and continuously enlarged up to 9T, indicating the gradual alignment of the magnetic moment in CFO under perpendicular magnetic field. The approaches and results accommodated in this work show that CFO can effectively magnetize (Bi1-xSbx)2Se3 and the heterostructures are promising for TI-based spintronic device applications. Meanwhile, in the second part, we integrated bilayer structure of covered Pt on nickel zinc ferrite (NZFO) and CoFe/Pt/NZFO tri-layer structure by pulsed laser deposition system for a spin Hall magnetoresistance (SMR) study. In the bilayer structure, the angular-dependent magnetoresistance (MR) results indicate that Pt/NZFO has a well-defined SMR behavior. Moreover, the spin Hall angle and the spin diffusion length, which were 0.0705 and 0.85 nm, respectively, can be fitted by changing the Pt thickness in the SMR equation. Particularly, the MR ratio of the bilayer structure (Pt/NZFO) has the highest changing ratio (about 0.135%), compared to the prototype structure Pt/Y3Fe5O12 (YIG) because the NZFO has higher magnetization. Meanwhile, the tri-layer samples (CoFe/Pt/NZFO) indicate that the MR behavior is related with CoFe thickness as revealed in angular-dependent MR measurement. Additionally, comparison between the tri-layer structure with Pt/NZFO and CoFe/Pt bilayer systems suggests that the SMR ratio can be enhanced by more than 70%, indicating that additional spin current should be injected into Pt layer.

碩士
國立雲林科技大學
材料科技研究所
102
In this thesis, we focused on switching pMTJ’s magnetic moments by the spin Hall effect (SHE). The spin current can be generated in nonmagnetic materials by theSHE, which spin up and spin down currents accumulate on the surface by charge current. We incooperated the perpendicular magnetic tunnel junctions (pMTJ) with SHE of structure CoFeB / MgO / CoFeB, which have the advantages of high magnetoresistance, small writing current and good thermal stability. To increase the spin current amplitude, Ta served as the bottom electrode. The pMTJ structure is SiOx / Ta (X nm) / Co40Fe40B20 (1.2 nm) / MgO (2nm) / Co20Fe60B20 (2.3 nm) / Ta (5 nm) / Ru (5 nm), where Co40Fe40B20 served as free layer while Co20Fe60B20 served as fixed layer. Both the thickness of Ta and annealing procedure were varied to improve the magnetic properties. The samples were then patterned into 6x8 m2 devices to make resistance measurements. The magnetoresistance (MR) measurements show that the samples of different Ta thicknesses, 25 and 15 nm, result in different MR ratio 33% and 27%, respectively. The resistance and current measurement of three-terminal SHE device. We prepare the electrical components with bottom electrode Ta 25 nm, the result shows that the ratio between high and low resistance is about 31% when pass into a maximum current in 8 mA. In this experiment, we transferred the spin torque successfully by spin Hall effect, and it shows that the resistance changed significantly with increasing currents.

碩士
國立雲林科技大學
材料科技研究所
104
In this thesis, we focused on switching characteristic of free layer of perpendicular magnetic tunneling junction (pMTJ) structure by the spin Hall effect (SHE). The CoFeB/MgO/CoFeB pMTJ structure has high magnetoresistance, small writing current, and good thermal stability. In order to increase the spin current efficiency, the bottom electrode Ta is used under pMTJ layer to perform the SHE magnetization reversal measurement. The pMTJ structure is SiOx / Ta (25 nm) / Co40Fe40B20 (1.2 nm) / MgO (2nm) / Co20Fe60B20 (2.3 nm) / Ta (5 nm) / Ru (5 nm). To improve the magnetic properties, the two steps annealing treatment were used at heating rate 15℃/min. The samples were patterned into various size devices, say, 0.9 μm×1.2 μm,1.0 μm×3.5 μm,0.3μm×0.4 and 0.2μm×0.7 μm, to perform resistance measurements. The magnetoresistance (MR) for 0.9 μm × 1.2 μm is 31%, while the MR ratio of 0.3μm × 0.4μm is reduced to 0.33%. According to the resistance and current measurement of three-terminal SHE device, the RI ratio without external field pMTJ was 49%. While the RI ratio of pMTJ is increased to 180% with an external magnetic field 30 Oe. This study showsthat the free layer of pMTJ can be reversed by spin Hall effect current, and it shows that the resistance changed significantly with applying a small magnetic field. Keywords：spin Hall effect, spin torque transfer, spin current, pMTJ, perpendicular megnetic tunnel junction.

Spintronics in metallic multilayers, composed of ferromagnetic (F) and non-magnetic (N) metals, grew out of two complementary discoveries. The first, Giant Magnetoresistance (GMR), refers to a change in multilayer resistance when the relative orientation of magnetic moments in adjacent F-layers is altered by an applied magnetic field. The second, Spin-Transfer-Torque (STT), involves a change in the relative orientation of F-layer moments by an electrical current. This novel physical phenomenon offers unprecedented spatial and temporal control over the magnetic state of a ferromagnet and has tremendous potential in a broad range of technologies, including magnetic memory and recording. Because of its small size (<10nm), point contact is a very efficient probe of electrical transport properties in extremely small sample volumes yet inaccessible with other techniques. We have observed the point-contact excitations in magnetic multilayers at room temperature and extended the capabilities of our point-contact technique to include the sensitivity to wavelengths of the current-induced spin waves. Recently MacDonald and coworkers have predicted that similar to ferromagnetic multilayers, the magnetic state of an antiferromagnetic (AFM) system can affect its transport properties and result in antiferromagnetic analogue of giant magnetoresistance (GMR) = AGMR; while high enough electrical current density can affect the magnetic state of the system via spin-transfer-torque effect. We show that a high density dc current injected from a point contact into an exchange-biased spin valve (EBSV) can systematically change the exchange bias, increasing or decreasing it depending on the current direction. This is the first evidence for current-induced effects on magnetic moments in antiferromagnetic (FeMn or IrMn) metals. We searched for AGMR in multilayers containing different combinations of AFM=FeMn and F=CoFe layers. At low currents, no magnetoresistance (MR) was observed in any samples suggesting that no AGMR is present in these samples. In samples containing F-layers, high current densities sometimes produced a small positive MR – largest resistance at high fields. For a given contact resistance, this MR was usually larger for thicker F-layers, and for a given current, it was usually larger for larger contact resistances (smaller contacts). We tentatively attribute this positive MR to suppression at high currents of spin accumulation induced around and within the F-layers.
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Transition metal and related compounds have been extensively studied over the past several decades. These investigations revealed a wide range of behavior, encompassing colossal magnetoresistance (CMR), high-TC superconductivity, and magnetic semiconductivity, all of which continue to present fundamental challenges to the understanding of such phenomena. There is, however, a close correlation between such characteristics and the appearance of magnetic order. This correlation underlies the present study, which focuses on the magnetic and transport behavior of various Manganese (Mn), Iron (Fe) and Cobalt (Co) containing materials, with particular emphasis on the nature of the magnetic order they display and the critical exponents that characterize the accompanying phase transition. The magnetic and transport properties of two specific systems will be covered: first various doped manganites from the series (La,Pr)1-x(Ca,Ba)xMnO3, and second the magnetic semiconductors Fe0.8Co0.2Si and Ga0.98Mn0.02As. In the manganites, the influence of doping on; (i) the evolution of the metal-insulator transition (MIT) with composition; (ii) the universality class of the magnetic critical behavior associated with the paramagnetic to ferromagnetic transition, which occurs in the vicinity of a MIT with which CMR is associated; (iii) the mechanisms underlying ferromagnetism across the MIT; (iv) the correlation between the appearance of a Griffiths-like phase and CMR, and (v) the origin of Griffiths-like phase have been investigated. Four different systems have been studied: La1-xCaxMnO3 (0.18 ≤ x ≤ 0.27), La1-xBaxMnO3 (x ≤ 0.33), (La1-yPry)0.7Ca0.3Mn16/18O3 (y ≤ 0.85), and Pr1-xCaxMnO3 (x = 0.27, 0.29). In Fe0.8Co0.2Si and Ga0.98Mn0.02As, the scaling between magnetization and conductivity has been the subject of ongoing debate. In bulk Fe0.8Co0.2Si, a novel scaling between the anomalous Hall effect (AHE) and the magnetization enables the anomalous Hall coefficient to be accurately determined. In turn, this enables the universality class for the transition to ferromagnetism to be established independently from the anomalous Hall conductivity. In an epitaxial (metallic) Ga0.98Mn0.02As microstructure, the magnetization has been indirectly determined from the AHE. Subsequent analysis yields magnetic critical exponents consistent with the Mean-Field model, direct support for which had previously been lacking.

Magnetoresistive effects are powerful tools for studying the intricate structure of solid state electronic systems, and have many applications in our current information technology. In particular, the electronic system reflects the crystal symmetry and the orbital structure of the atoms of a given solid, and thus is crucial to understanding magnetism, superconductivity and many other effects which are of key interest to current solid state research. Consequently, studies of the electrical transport properties of solid state matter allow to evaluate this imprint and in turn draw conclusions about the interactions within a material. In this thesis, we will exploit the capabilities of magnetotransport measurements to infer the properties of a multitude of magnetic systems. In turn, this allows us to push the understanding of transport phenomena in magnetic materials. The first part of this work is focused on the magnetoresistance observed in spin Hall active metals in contact with a magnetic insulator. In such bilayers, the interfacial spin accumulation caused by the spin Hall effect in the metal can interact with the magnetic insulator, giving rise to interesting magnetoresistive effects. In the framework of this thesis, bilayers with several magnetic insulators are studied, including antiferomagnets, ferrimagnets and paramagnets (disordered magnets). For the disordered magnetic insulators, we find that the established spin Hall magnetoresistance framework does not allow to consistently describe the observed transport response. Consequently, we propose an alternative explanation of the magnetoresistance in such heterostructures, using the Hanle magnetoresistance and assuming an interface which has a finite electrical conductivity. This alternative model can serve to generalize the theory of the spin Hall magnetoresistance, providing addition information on the microscopic picture for the loss of the transverse spin component. Additionally, by partly removing the magnetic insulator and studying the ensuing changes, we verify that magnons are crucial for the observation of a non-local magnetoresistance in bilayers of a magnetic insulator and a metal. Finally, the local and non-local spin Seebeck effect (i.e. the electric field generated by a thermally driven pure spin current) is investigated in bilayers of Cr2O3 and Pt where the occurrence of a spin superfluid ground state was reported. In our sample, however, the transport response is consistent with the antiferromagnetic spin Seebeck effect mediated by the small magnetic field induced magnetization also reported for other antiferromagnet/metal heterostructures. As such, we cannot verify the presence of a spin superfluid ground state in the system. In the second part of this thesis, the topological properties of the electronic system and the related changes of the magnetoelectric and magnetothermal transport response are investigated. To that end, we first demonstrate a novel measurement technique, the alternating thermal gradient technique, allowing to separate the relevant thermovoltages from spurious other voltages generated within the measurement setup. We employ this novel technique for measuring the topological Nernst effect in Mn 1.8 PtSn and show the possibility to combine the magnetoelectric and magnetothermal transport response to evaluate the presence of topological transport signatures without requiring magnetization measurements. Additionally, we show that the anomalous Nernst effect in the non-collinear antiferromagnet Mn3Sn is connected to the antiferromagnetic domain structure: Using spatially resolved measurements of the anomalous Nernst effect, direct access to the antiferromagnetic domain structure is demonstrated. Additionally, a thermally assisted domain writing scheme is implemented, allowing the preparation of Mn3Sn into a defined antiferromagnetic domain state.

In the present thesis, we have explored multiple aspects concerning the stochasticity of magnetic domain wall motion during magnetization reversal, all of which originated from our initial study of magnetic field sensing using planar Hall effect. Magnetic field sensors occupy a very important and indispensable position in modern technology. They can be found everywhere, from cellphones to automobiles, electric motors to computer hard disks. At present there are several emerging areas of technology, including biotechnology, which require magnetic field sensors which are at the same time simple to use, highly sensitive, robust under environmental conditions and sufficiently low cost to be deployed on a large scale. Magnetic field sensing using planar Hall effect is one such feasible technology, which we have explored in the course of the thesis. The work was subsequently expanded to cover some fundamental aspects of the stochasticity of domain wall motion, studied with planar Hall effect, which forms the main body of work in the present study. In Chapter 1, we give an introduction to the phenomenology of planar Hall effect, which is the most important measurement technique used for all the subsequent studies. Some early calculations, which had first led to the understanding of anisotropic magnetoresistance and planar Hall effect as being caused by spin-orbit interaction are discussed. In Chapter 2, we discuss briefly the experimental techniques used in the present study for sample growth and fabrication, structural and magnetic characterization, and measurement. We discuss pulsed laser ablation, which is the main technique used for our sample growth. Particular emphasis is given to the instrumentation that was carried out in-house for MOKE and low field magnetotransport (AMR and PHE) measurement. This includes an attempt at domain wall imaging through MOKE microscopy. Some of the standard equipments used for this work, such as the SQUID magnetometer and the acsusceptometer are also discussed in detail. In Chapter 3 we discuss our work on planar Hall sensors that led to the fabrication of a device with a very simple architecture, having transfer characteristics of 650V/A.T in a range of _2Oe. The sensing material was permalloy (Ni81Fe19), and the value had been obtained without using an exchange biased pinning layer. Field trials showed that the devices were capable of geomagnetic field sensing, as well as vehicle detection by sensing the anomaly in Earth's magnetic field caused by their motion. Its estimated detection threshold of 2.5nT made it well suited for several other applications needing high sensitivity in a small area, the most prominent of them being the detection of macromolecules of bio-medical significance. Chapter 4: The work on Barkhausen noise was prompted by reproducibility problems faced during the sensor construction, both between devices as well as within the same device. Study of the stochastic properties led us to the conclusion that the devices could be grouped into two classes: one where the magnetization reversal occurred in a single step, and the other where it took a 0staircase0 like path with multiple steps. This led us to simulations of Barkhausen noise using nucleation models like the RFIM whence it became apparent that the two different groups of samples could be mapped into two regimes of the RFIM distinguished by their magnetization reversal mode. In the RFIM, the nature of the hysteresis loop depends on the degree of disorder, with a crossover happening from single-step switching to multi-step switching at a critical disorder level. Appropriate changes also appear in the Barkhausen noise statistics due to this disorder-induced crossover. By studying the Barkhausen noise statistics for our permalloy samples and comparing them with simulations of the RFIM, we found nearly exact correspondence between the two experimental groups with the two classes resulting from crossing the critical disorder. What remained was to quantify the 0disorder0 level of our samples, which was done through XRD, residual resistivity and a study of electron-electron interaction effects in the resistivity. All these studies led to the conclusion that the samples reversing in multiple steps were more 0defective0 than the other group, at par with the model predictions. This completed the picture with respect to the modeling of the noise. In experiments, it was found that a high rate of film deposition yielded less 0defective0 samples, which severed as an important input for the sensor construction. These results can be viewed from a somewhat broader perspective if we consider the present scenario in the experimental study of Barkhausen noise, or crackling noise in general. Two classes of models exist for such phenomena: front propagation models and nucleation models. Both appear to be very successful when it comes to experiments with bulk materials, while the comparison with experiments on thin films is rather disappointing. It is still not clear whether the models are at fault or the experiments themselves. Through our study, we could demonstrate that there can be considerable variation in the Barkhausen noise character of the same material deposited in the same way, and what was important was the degree of order at the microscopic level. This may be a relevant factor when experimental papers report non-universality of Barkhausen noise in thin films, which can now be interpreted as either insufficient defects or a sample area too small for the study. Chapter 5: Defects in a sample are not the only cause for stochastic behavior during magnetization. In most cases, random thermal 0events0 are also an important factor determining the path to magnetization reversal, which was also true for our permalloy samples. We studied the distribution of the external fields at which magnetization reversal took place in our samples, and tried to explain it in terms of the popular Neel-Brown model of thermal excitation over the anisotropy barrier. The analysis showed that even though the coercivity behaved 0correctly0 in terms of the model predictions, the behavior of the distribution width was anomalous. Such anomalies were common in the literature on switching field distributions, but there seemed to be no unified explanation, with different authors coming up with their own 0exotic0 explanations. We decided to investigate the simplest situations that could result in such a behavior, and through some model-based calculations, came to the conclusion that one of the causes of the anomalies could be the different magnitudes of barrier heights/anisotropy fields experienced by the magnetic domain wall when the reversal occurs along different paths. Though an exact match for the behavior of the distribution width could not be obtained, the extended Neel-Brown model was able to produce qualitative agreement. Chapter 6 contains a study of some interesting 0geometrical0 effects on Barkhausen noise of iron thin films. By rotating the applied magnetic field out-of plane, we could observe the same single-step to multi-step crossover in hysteresis loop nature that was brought about by varying disorder in Chapter 4. We could explain this through simulations of a random anisotropy Ising model, which, apart from exhibiting the usual disorder induced crossover, showed a transition from sub-critical to critical hysteresis loops when the external field direction was rotated away form the average anisotropy direction. Once again, simulation and experiment showed very good agreement in terms of the qualitative behavior. In the second part of this chapter, a study of exchange biased Fe-FeMn system was carried out, where it was observed that the reversal mode has been changed from domain wall motion to coherent rotation. Barkhausen noise was also suppressed. Though many single-domain models existed for this type of reversal, our system was not found to be strictly compatible with them. The disagreement was with regard to the nature of the hysteresis, which, if present, had to be a single step process for a single domain model. The disagreement was naturally attributed to interaction with the nearby magnetic moments, to verify which, simulations were done with a simplified micromagnetic code, which produced excellent agreement with experiment. In Chapter 7, we have studied the temporal properties of Barkhausen avalanches, to compare the duration distributions with simulation. We had used a permalloy sample that was sub-critical according to avalanche size distributions, and our measurement was based on magneto-optic Kerr effect. We measured duration distributions which showed a similar manifestation of finite-size effects as were shown by the size distributions. The power law exponent was calculated, which was deemed 0reasonable0 upon comparison simulations of the sub-critical RFIM. Appendix A contains a study of high-field magnetoresistance of permalloy, which shows that the dominant contribution to magnetoresistance is the suppression of electron-magnon scattering. An interesting correlation is observed between the magnetization of samples and an exchange stiffness parameter d1, that was extracted from magnetoresistance measurements. Here we also re-visit our earlier observation of permalloy thin films possessing a resistance minimum at low temperature. The origin of this minimum is attributed to electron-electron interaction. Appendix B contains the source codes for most of the important programs used for simulation and data analysis. The programs are written in MATLAB and FORTRAN 95. LabView programs used for data acquisition and analysis are not included due to space requirements to display their graphical source codes. Appendix C discusses the studies on a disordered rare-earth oxide LaMnO3. The re-entrant glassy phase is characterized with ac susceptibility and magnetization measurements to extract information about the nature of interactions between the magnetic 0macrospins0 in the system. Appendix D deals with electron scattering experiments performed with spinpolarized electrons (SPLEED) from clean metal surfaces in UHV. A study of the scattering cross sections as a function of energy and scattering angle provides information about spin-orbit and exchange interactions of the electrons with the surface atoms, and can answer important questions pertaining to the electronic and magnetic structure of surfaces. In the course of this study, planar Hall effect is seen to emerge as a powerful tool to study the magnetic state of a thin film, so that it is interesting to apply it to thin films of other materials such as oxides, where magnetization noise studies are next to nonexistent. What also emerged is that there is still a lot of richness present in the details of supposedly well-understood magnetization phenomena, some of which we have explored in this thesis in the context of stochastic magnetization processes.

In the present thesis, we have explored multiple aspects concerning the stochasticity of magnetic domain wall motion during magnetization reversal, all of which originated from our initial study of magnetic field sensing using planar Hall effect. Magnetic field sensors occupy a very important and indispensable position in modern technology. They can be found everywhere, from cellphones to automobiles, electric motors to computer hard disks. At present there are several emerging areas of technology, including biotechnology, which require magnetic field sensors which are at the same time simple to use, highly sensitive, robust under environmental conditions and sufficiently low cost to be deployed on a large scale. Magnetic field sensing using planar Hall effect is one such feasible technology, which we have explored in the course of the thesis. The work was subsequently expanded to cover some fundamental aspects of the stochasticity of domain wall motion, studied with planar Hall effect, which forms the main body of work in the present study. In Chapter 1, we give an introduction to the phenomenology of planar Hall effect, which is the most important measurement technique used for all the subsequent studies. Some early calculations, which had first led to the understanding of anisotropic magnetoresistance and planar Hall effect as being caused by spin-orbit interaction are discussed. In Chapter 2, we discuss briefly the experimental techniques used in the present study for sample growth and fabrication, structural and magnetic characterization, and measurement. We discuss pulsed laser ablation, which is the main technique used for our sample growth. Particular emphasis is given to the instrumentation that was carried out in-house for MOKE and low field magnetotransport (AMR and PHE) measurement. This includes an attempt at domain wall imaging through MOKE microscopy. Some of the standard equipments used for this work, such as the SQUID magnetometer and the acsusceptometer are also discussed in detail. In Chapter 3 we discuss our work on planar Hall sensors that led to the fabrication of a device with a very simple architecture, having transfer characteristics of 650V/A.T in a range of _2Oe. The sensing material was permalloy (Ni81Fe19), and the value had been obtained without using an exchange biased pinning layer. Field trials showed that the devices were capable of geomagnetic field sensing, as well as vehicle detection by sensing the anomaly in Earth's magnetic field caused by their motion. Its estimated detection threshold of 2.5nT made it well suited for several other applications needing high sensitivity in a small area, the most prominent of them being the detection of macromolecules of bio-medical significance. Chapter 4: The work on Barkhausen noise was prompted by reproducibility problems faced during the sensor construction, both between devices as well as within the same device. Study of the stochastic properties led us to the conclusion that the devices could be grouped into two classes: one where the magnetization reversal occurred in a single step, and the other where it took a 0staircase0 like path with multiple steps. This led us to simulations of Barkhausen noise using nucleation models like the RFIM whence it became apparent that the two different groups of samples could be mapped into two regimes of the RFIM distinguished by their magnetization reversal mode. In the RFIM, the nature of the hysteresis loop depends on the degree of disorder, with a crossover happening from single-step switching to multi-step switching at a critical disorder level. Appropriate changes also appear in the Barkhausen noise statistics due to this disorder-induced crossover. By studying the Barkhausen noise statistics for our permalloy samples and comparing them with simulations of the RFIM, we found nearly exact correspondence between the two experimental groups with the two classes resulting from crossing the critical disorder. What remained was to quantify the 0disorder0 level of our samples, which was done through XRD, residual resistivity and a study of electron-electron interaction effects in the resistivity. All these studies led to the conclusion that the samples reversing in multiple steps were more 0defective0 than the other group, at par with the model predictions. This completed the picture with respect to the modeling of the noise. In experiments, it was found that a high rate of film deposition yielded less 0defective0 samples, which severed as an important input for the sensor construction. These results can be viewed from a somewhat broader perspective if we consider the present scenario in the experimental study of Barkhausen noise, or crackling noise in general. Two classes of models exist for such phenomena: front propagation models and nucleation models. Both appear to be very successful when it comes to experiments with bulk materials, while the comparison with experiments on thin films is rather disappointing. It is still not clear whether the models are at fault or the experiments themselves. Through our study, we could demonstrate that there can be considerable variation in the Barkhausen noise character of the same material deposited in the same way, and what was important was the degree of order at the microscopic level. This may be a relevant factor when experimental papers report non-universality of Barkhausen noise in thin films, which can now be interpreted as either insufficient defects or a sample area too small for the study. Chapter 5: Defects in a sample are not the only cause for stochastic behavior during magnetization. In most cases, random thermal 0events0 are also an important factor determining the path to magnetization reversal, which was also true for our permalloy samples. We studied the distribution of the external fields at which magnetization reversal took place in our samples, and tried to explain it in terms of the popular Neel-Brown model of thermal excitation over the anisotropy barrier. The analysis showed that even though the coercivity behaved 0correctly0 in terms of the model predictions, the behavior of the distribution width was anomalous. Such anomalies were common in the literature on switching field distributions, but there seemed to be no unified explanation, with different authors coming up with their own 0exotic0 explanations. We decided to investigate the simplest situations that could result in such a behavior, and through some model-based calculations, came to the conclusion that one of the causes of the anomalies could be the different magnitudes of barrier heights/anisotropy fields experienced by the magnetic domain wall when the reversal occurs along different paths. Though an exact match for the behavior of the distribution width could not be obtained, the extended Neel-Brown model was able to produce qualitative agreement. Chapter 6 contains a study of some interesting 0geometrical0 effects on Barkhausen noise of iron thin films. By rotating the applied magnetic field out-of plane, we could observe the same single-step to multi-step crossover in hysteresis loop nature that was brought about by varying disorder in Chapter 4. We could explain this through simulations of a random anisotropy Ising model, which, apart from exhibiting the usual disorder induced crossover, showed a transition from sub-critical to critical hysteresis loops when the external field direction was rotated away form the average anisotropy direction. Once again, simulation and experiment showed very good agreement in terms of the qualitative behavior. In the second part of this chapter, a study of exchange biased Fe-FeMn system was carried out, where it was observed that the reversal mode has been changed from domain wall motion to coherent rotation. Barkhausen noise was also suppressed. Though many single-domain models existed for this type of reversal, our system was not found to be strictly compatible with them. The disagreement was with regard to the nature of the hysteresis, which, if present, had to be a single step process for a single domain model. The disagreement was naturally attributed to interaction with the nearby magnetic moments, to verify which, simulations were done with a simplified micromagnetic code, which produced excellent agreement with experiment. In Chapter 7, we have studied the temporal properties of Barkhausen avalanches, to compare the duration distributions with simulation. We had used a permalloy sample that was sub-critical according to avalanche size distributions, and our measurement was based on magneto-optic Kerr effect. We measured duration distributions which showed a similar manifestation of finite-size effects as were shown by the size distributions. The power law exponent was calculated, which was deemed 0reasonable0 upon comparison simulations of the sub-critical RFIM. Appendix A contains a study of high-field magnetoresistance of permalloy, which shows that the dominant contribution to magnetoresistance is the suppression of electron-magnon scattering. An interesting correlation is observed between the magnetization of samples and an exchange stiffness parameter d1, that was extracted from magnetoresistance measurements. Here we also re-visit our earlier observation of permalloy thin films possessing a resistance minimum at low temperature. The origin of this minimum is attributed to electron-electron interaction. Appendix B contains the source codes for most of the important programs used for simulation and data analysis. The programs are written in MATLAB and FORTRAN 95. LabView programs used for data acquisition and analysis are not included due to space requirements to display their graphical source codes. Appendix C discusses the studies on a disordered rare-earth oxide LaMnO3. The re-entrant glassy phase is characterized with ac susceptibility and magnetization measurements to extract information about the nature of interactions between the magnetic 0macrospins0 in the system. Appendix D deals with electron scattering experiments performed with spinpolarized electrons (SPLEED) from clean metal surfaces in UHV. A study of the scattering cross sections as a function of energy and scattering angle provides information about spin-orbit and exchange interactions of the electrons with the surface atoms, and can answer important questions pertaining to the electronic and magnetic structure of surfaces. In the course of this study, planar Hall effect is seen to emerge as a powerful tool to study the magnetic state of a thin film, so that it is interesting to apply it to thin films of other materials such as oxides, where magnetization noise studies are next to nonexistent. What also emerged is that there is still a lot of richness present in the details of supposedly well-understood magnetization phenomena, some of which we have explored in this thesis in the context of stochastic magnetization processes.

The Kondo effect is a well-known and intensely studied phenomenon in condensed matter physics. After the theoretical prediction of Zawadowski and Noizères about the two-channel Kondo (2CK) effect, several successful attempts have been made to experimentally realize the 2CK effect. Usually the 2CK fixed point is not stable in the presence of magnetism as it can break the channel symmetry. But Zhu et al. have recently reported the coexistence of ferromagnetism and 2CK effect in thin films of L10- MnGa and L10- MnAl. The small spin polarization due to the disorder-induced antiparallel aligned between Mn–Mn atoms results in weak channel asymmetry and hence coexistence of 2CK with ferromagnetism. In order to get new insights about the simultaneous presence of magnetism and the 2CK effect, the low temperature magneto-transport properties of the composites containing LaNiO3 (LNO) and CoFe2O4 (CFO) [(1−x)LNO + xCFO; x = 0, 0.10, 0.15, 0.20, 0.25] are studied extensively. For composite with lower percentage of CFO (x = 0.10), spin one channel Kondo effect dominates at low temperature. However, in case of x ≥ 0.15 resistivity below the upturn is governed by orbital 2CK effect which originates from the scattering of conduction electrons with the structural disorders created at the interfaces between the two phases (LNO and CFO). The magnetoresistance and anomalous Hall effect (AHE) are studied in the two composites with x = 0.15 and 0.20 to understand the origin of AHE in systems with structural defects and to unravel the correlation between AHE and 2CK physics. The AHE shows two important phenomena, one is the AHE of the composites with 15 % and 20 % CFO follow scaling behaviour with longitudinal resistivity at high temperature, but shows a deviation around Kondo temperature (TK) and a sudden jump in the temperature variation of anomalous Hall coefficient near TK. These two observations suggest the AHE is strongly influenced by the presence of orbital 2CK effect. The complex impedance spectroscopy (CIS) is a useful tool to correlate the electrical properties with the microstructure and to determine various polarization process present in grain, grain boundaries and electrode-interfaces of polycrystalline materials. In the second part of my thesis, the same compounds (LNO and CFO) are used with changing the composition in such a way that CFO acts as insulating matrix and LNO plays the role of conductive filler [xLNO + (1-x)CFO; x = 0, 0.05, 0.10, 0.15]. The physics of transport and dielectric properties are investigated in detail applying the CIS technique. Adding LNO affects the grain boundary transport in the composites enabling short range hopping of the ions across it