Relevant bibliographies by topics / Giant Magnetoresistance and Hall effect

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  2. Dissertations / Theses
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Academic literature on the topic 'Giant Magnetoresistance and Hall effect'

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Published: 25 May 2024

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Journal articles on the topic "Giant Magnetoresistance and Hall effect"

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Huang, Hui, Juanjuan Gu, Ping Ji, Qinglong Wang, Xueyou Hu, Yongliang Qin, Jingrong Wang, and Changjin Zhang. "Giant anisotropic magnetoresistance and planar Hall effect in Sr0.06Bi2Se3." Applied Physics Letters 113, no. 22 (November 26, 2018): 222601. http://dx.doi.org/10.1063/1.5063689.

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Budantsev, M. V., A. G. Pogosov, A. E. Plotnikov, A. K. Bakarov, A. I. Toropov, and J. C. Portal. "Giant hysteresis of magnetoresistance in the quantum hall effect regime." JETP Letters 86, no. 4 (October 2007): 264–67. http://dx.doi.org/10.1134/s0021364007160102.

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Núñez-Regueiro, J. E., D. Gupta, and A. M. Kadin. "Hall effect and giant magnetoresistance in lanthanum manganite thin films." Journal of Applied Physics 79, no. 8 (1996): 5179. http://dx.doi.org/10.1063/1.361331.

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Wang, Silin, and Junji Gao. "Overview of Magnetic Field Sensor." Journal of Physics: Conference Series 2613, no. 1 (October 1, 2023): 012012. http://dx.doi.org/10.1088/1742-6596/2613/1/012012.

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Abstract This article summarizes the commonly used in magnetic sensors Hall sensors, Anisotropic magnetoresistive sensor (AMR), Giant magnetoresistance effect sensor (GMR) and Tunneling magnetoresistance sensor (TMR). The structure and working principle of each sensor are introduced. In addition, some error sources of magnetic sensors and the calibration techniques used are introduced, and some typical application examples of each sensor are introduced.
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Bobin, S. B., and A. T. Lonchakov. "Giant Planar Hall Effect in an Ultra-Pure Mercury Selenide Single Crystal Sample." JETP Letters 118, no. 7 (October 2023): 495–501. http://dx.doi.org/10.1134/s0021364023602658.

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A giant planar Hall effect with an amplitude of about 50 mΩ cm at a temperature of T = 80 K in a magnetic field of 10 T has been detected in an ultra-pure HgSe single crystal sample with an electron density of 5.5 × 1015 cm–3. Its oscillating dependence on the rotation angle of the sample in various magnetic fields has been determined. Attributes (oscillation period, positions of extrema, correlation between the amplitudes of planar Hall and planar longitudinal magnetoresistance) indicate that the planar Hall effect in this nonmagnetic gapless semimetal with an isotropic Fermi surface originates from the chiral anomaly. This is a solid argument for the topological nature of the electronic spectrum of HgSe.
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Samoilov, A. V., G. Beach, C. C. Fu, N. C. Yeh, and R. P. Vasquez. "Giant spontaneous Hall effect and magnetoresistance in La1−xCaxCoO3 (0.1⩽x⩽0.5)." Journal of Applied Physics 83, no. 11 (June 1998): 6998–7000. http://dx.doi.org/10.1063/1.367623.

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Xiong, Peng, Gang Xiao, J. Q. Wang, John Q. Xiao, J. Samuel Jiang, and C. L. Chien. "Extraordinary Hall effect and giant magnetoresistance in the granular Co-Ag system." Physical Review Letters 69, no. 22 (November 30, 1992): 3220–23. http://dx.doi.org/10.1103/physrevlett.69.3220.

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Zhang, H., X. Y. Zhu, Y. Xu, D. J. Gawryluk, W. Xie, S. L. Ju, M. Shi, et al. "Giant magnetoresistance and topological Hall effect in the EuGa4 antiferromagnet." Journal of Physics: Condensed Matter 34, no. 3 (November 3, 2021): 034005. http://dx.doi.org/10.1088/1361-648x/ac3102.

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Abstract We report on systematic temperature- and magnetic field-dependent studies of the EuGa4 binary compound, which crystallizes in a centrosymmetric tetragonal BaAl4-type structure with space group I4/mmm. The electronic properties of EuGa4 single crystals, with an antiferromagnetic (AFM) transition at T N ∼ 16.4 K, were characterized via electrical resistivity and magnetization measurements. A giant nonsaturating magnetoresistance was observed at low temperatures, reaching ∼ 7 × 1 0 4 % at 2 K in a magnetic field of 9 T. In the AFM state, EuGa4 undergoes a series of metamagnetic transitions in an applied magnetic field, clearly manifested in its field-dependent electrical resistivity. Below T N, in the ∼4–7 T field range, we observe also a clear hump-like anomaly in the Hall resistivity which is part of the anomalous Hall resistivity. We attribute such a hump-like feature to the topological Hall effect, usually occurring in noncentrosymmetric materials known to host topological spin textures (as e.g., magnetic skyrmions). Therefore, the family of materials with a tetragonal BaAl4-type structure, to which EuGa4 and EuAl4 belong, seems to comprise suitable candidates on which one can study the interplay among correlated-electron phenomena (such as charge-density wave or exotic magnetism) with topological spin textures and topologically nontrivial bands.
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Zhu, L., X. X. Qu, H. Y. Cheng, and K. L. Yao. "Spin-polarized transport properties of the FeCl2/WSe2/FeCl2 van der Waals heterostructure." Applied Physics Letters 120, no. 20 (May 16, 2022): 203505. http://dx.doi.org/10.1063/5.0091580.

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The discovery of the giant magnetoresistance effect has led to the rapid development of spintronics. Although the half-metals can provide a 100% spin polarization rate and significantly improved giant magnetoresistance, the materials with low Curie temperatures present challenges for their use at room temperature. In an attempt to identify the half-metallic material with high Curie temperatures for spintronics, this study investigates a van der Waals heterostructure with vertically integrated FeCl2/WSe2/FeCl2. The spin-polarized transport properties of the device based on the heterostructure studied by the density function theory combined with nonequilibrium Green's function reveal comprehensive spintronics functions, including giant magnetoresistance, spin filtering, and negative differential resistance effect. The mechanism of the negative differential resistance effect has further been elucidated by the band alignment of the heterostructure under different biases within the bias window.
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Blachowicz, Tomasz, Ilda Kola, Andrea Ehrmann, Karoline Guenther, and Guido Ehrmann. "Magnetic Micro and Nano Sensors for Continuous Health Monitoring." Micro 4, no. 2 (April 6, 2024): 206–28. http://dx.doi.org/10.3390/micro4020015.

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Magnetic micro and nano sensors can be used in a broad variety of applications, e.g., for navigation, automotives, smartphones and also for health monitoring. Based on physical effects such as the well-known magnetic induction, the Hall effect, tunnel magnetoresistance and giant magnetoresistance, they can be used to measure positions, flow, pressure and other physical properties. In biomedicine and healthcare, these miniaturized sensors can be either integrated into garments and other wearables, be directed through the body by passive capsules or active micro-robots or be implanted, which usually necessitates bio-functionalization and avoiding cell-toxic materials. This review describes the physical effects that can be applied in these sensors and discusses the most recent micro and nano sensors developed for healthcare applications.
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Dissertations / Theses on the topic "Giant Magnetoresistance and Hall effect"

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Östling, Johan. "High Accuracy Speed and Angular Position Detection by Dual Sensor." Thesis, Uppsala universitet, Fasta tillståndets fysik, 2018. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-365726.

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For many decades there has been a need in many industries to measure speed and position of ferrous gears. This is commonly done by converting passing gear teeth from trigger wheels to electrical impulses to calculate speed and angular position. By using Hall effect sensors or Giant Magnetoresistance sensors (GMR), a zero speed detection of gear teeth is possible while at the same time be cheap to produce and durable for harsh environments. A specially designed trigger-wheel (cogwheel created for measurements) with gear teeth in a specific pattern, exact position can be detected by using a dual sensor, even when no earlier information is available. The new design of trigger-wheel also makes this new method more accurate and universal compared to previous solutions. This thesis demonstrates and argues for the advantages of using a dual sensor for speed and angular position detection on gear wheels. Were one sensor do quantitative measurements for pattern detection in the teeth arrangements and the other sensor do qualitative measurements for position detection.
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Kowalczyk, Hugo. "Transitions de phases et propriétés électroniques de couches 2D de WTe2 et MoTe2." Electronic Thesis or Diss., Sorbonne université, 2022. http://www.theses.fr/2022SORUS571.

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Cette thèse présente l’étude des propriétés électroniques et de transitions de phases de deux dichalcogénures de métaux de transition en couches fines : WTe2 et MoTe2. L’intérêt de ces matériaux réside dans leurs phases métastables à température et pression ambiantes, 1T’ et Td, les classant dans les semi-métaux de Weyl. Grâce à un échange réalisé à IISER Pune en Inde, nous avons pu synthétiser des monocristaux de 2H-MoTe2, 1T’-MoTe2 et Td-WTe2 par transport chimique en phase vapeur (CVT). Ces cristaux d’une grande qualité ont pu être caractérisés par DRX, MEB-EDX et spectroscopie Raman. Nous avons ensuite exfolié ces derniers par la méthode de collage anodique propre à notre laboratoire pour les caractériser en couches minces, puis mettre en place des dispositifs de mesure de transport grâce à l’évaporation de contacts en Or. Dans le contexte de pluralité de phases stables et métastables des dichalcogénures de métaux de transition, l’étude des transitions entre ces phases est très intéressante. Nous présentons la transition en température 1T’-Td dans MoTe2 et observons l’impact de l’épaisseur sur la température de transition, pouvant ainsi établir un diagramme de phase. Également, nous prouvons l’absence de transition 2H-1T’ et de sa réversibilité dans une monocouche de MoTe2 induite purement par dopage électrostatique, revendiquée dans des travaux récents. Cette transition, de la phase semi-conductrice vers la phase semi-métallique, présente un fort potentiel d’application dans le domaine des nanotechnologies comme switch électronique. Nous mettons en évidence, grâce à une expérience de dopage par charge d’espace fort et de mesure par spectroscopie Raman, le rôle de la migration du Tellure et de la création de lacunes dans cette transition. Nous avons également mesuré les propriétés de transport (magnétorésistance et effet Hall) de différente épaisseur de couches de Td-WTe2. Grâce à l’ajustement des paramètres d’un modèle à deux porteurs, nous avons déterminé les densités de porteurs ainsi que leurs mobilités et avons relié nos résultats à la théorie des semi-métaux compensés responsable de la gigantesque magnétorésistance de ce matériau. Ces expériences mettent en évidence le comportement plus résistif des couches les plus fines accompagné d’anti-localisation faible à basse température, tandis que les couches les plus épaisses sont plus conductrices et présentent des oscillations quantiques Shubnikov-de Haas à fort champ magnétique
This work presents the study of phase transitions and electronic properties of two transition metal dichalcogenides: WTe2 and MoTe2. The relevance of those materials lies in its two metastable phases at ambient pressure and temperature, 1T’ and Td, classifying them as Weyl semi-metals. We had the chance to synthesize 2H-MoTe2, 1T’-MoTe2 and Td-WTe2 monocrystals by chemical vapour transport during an exchange at IISER Pune in India. High quality resulting crystals were characterized by XRD, SEM-EDX and Raman spectroscopy. Then we could exfoliate it by the anodic bonding method proper to our laboratory, characterize their 2D form and build electronic measurement devices by gold contact deposition. In the context of multiple transition metal dichalcogenides stable and metastable phases, the study of the transitions between those phases is very interesting. We first present 1T’ to Td temperature induced phase transition in MoTe2 and observe the impact of layer thickness on transition temperature and establish a phase diagram. Then, we prove the absence of 2H to 1T’ transition and its reversibility in a MoTe2 monolayer purely induced by electrostatic doping, claimed by recent works. This transition, from semi-conductive to semi-metallic phase is likely predicted for applications in nanotechnologies as an electronic switch. Through space charge doping and Raman spectroscopy experiment, we highlight the role of Tellurium migration and the creation of vacancies in this transition. We also measured Td-WTe2 transport properties (magnetoresistance and Hall effect) of various layer thicknesses. Through a two band model parameters adjustment, we could determine carriers densities and mobilities and relate them to compensated semi-metal theory responsible of Giant Magnetoresistance response of this material. Those experiments could highlight the more insulating behaviour of thinner layers and the presence of weak anti-localization at low temperature, whereas the thinner layers are more conductive and exhibits Shubnikov-de Haas quantum oscillations at high magnetic field
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Wipatawit, Praphaphan. "Studies of magnetoresistance and Hall sensors in semiconductors." Thesis, University of Oxford, 2006. http://ora.ox.ac.uk/objects/uuid:58faf6f4-debb-4695-8909-fca7cbf310a2.

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The design, fabrication and performance of an Extraordinary Magnetoresistance (EMR) and a Vertical Mesa Hall Sensor (VMHS) are studied. EMR devices have been fabricated from a 2DEG InAs/GaSb structures which exhibit a low carrier density and high mobility that achieve the best performance. The general electrical magneto-transport properties are given. The experiments investigate mainly different metallic patterns, which are Rectangular, Triangular and Tip pattern between 4-300 K. Probe configurations and the enhancement of relative size of metallic patterns are described. EMR effect is due to current deflection around the metal-semiconductor interface. The results are metallic pattern dependent. Using finite element analysis, good agreement between experimental and theoretical results was found. The best performance sensor is a symmetrical metallic Tip pattern. It is enhanced by the length of the Tip’s point and the large metallic area. This pattern when combines with an asymmetrical probe configuration, exhibits the highest EMR of 900% at –0.275T measured by inner probes and the best sensitivity of 54Ω/T at room temperature. The second study presents in-plane Hall effect sensors made from InSb. A simple device geometry has been used in which current flows in a plane perpendicular to the device surface. Device sensitivity depends on its geometry and a series of different contacts are used to investigate the geometry of the current flow distribution. The structures produced are only sensitive to the presence of one in-plane field component, and they also demonstrate good angular selectivity. Multi-electrodes were used to investigate biasing current from both mesa and substrate condition. We are able to examine the Hall voltage as a function of contact positions and also to create multiple VMHS. Offset reduction of devices has been achieved by moving the ground contacts to re-balance the current distribution under the mesa surface.
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Fujimoto, Tatsuo. "Magnetic and magnetoresistive properties of anisotropy-controlled spin-valve structures." Thesis, University of Cambridge, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.387613.

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Shang, T., H. L. Yang, Q. F. Zhan, Z. H. Zuo, Y. L. Xie, L. P. Liu, S. L. Zhang, et al. "Effect of IrMn inserted layer on anomalous-Hall resistance and spin-Hall magnetoresistance in Pt/IrMn/YIG heterostructures." AMER INST PHYSICS, 2016. http://hdl.handle.net/10150/622466.

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We report an investigation of anomalous-Hall resistance (AHR) and spin-Hall magnetoresistance (SMR) in Pt/Ir20Mn80/Y3Fe5O12 (Pt/IrMn/YIG) heterostructures. The AHR of Pt/IrMn/YIG heterostructures with an antiferromagnetic inserted layer is dramatically enhanced as compared to that of the Pt/YIG bilayer. The temperature dependent AHR behavior is nontrivial, while the IrMn thickness dependent AHR displays a peak at an IrMn thickness of 3 nm. The observed SMR in the temperature range of 10-300 K indicates that the spin current generated in the Pt layer can penetrate the IrMn layer (<= 3 nm) to interact with the ferromagnetic YIG layer. The lack of conventional anisotropic magnetoresistance (AMR) implies that the insertion of the IrMn layer between Pt and YIG could efficiently suppress the magnetic proximity effect (MPE) on induced Pt moments by YIG. Published by AIP Publishing.
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Shang, T., Q. F. Zhan, H. L. Yang, Z. H. Zuo, Y. L. Xie, L. P. Liu, S. L. Zhang, et al. "Effect of NiO inserted layer on spin-Hall magnetoresistance in Pt/NiO/YIG heterostructures." AMER INST PHYSICS, 2016. http://hdl.handle.net/10150/621346.

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We investigate spin-current transport with an antiferromagnetic insulator NiO thin layer by means of the spin-Hall magnetoresistance (SMR) over a wide range of temperature in Pt/NiO/Y3Fe5O12 (Pt/NiO/YIG) heterostructures. The SMR signal is comparable to that without the NiO layer as long as the temperature is near or above the blocking temperature of the NiO, indicating that the magnetic fluctuation of the insulating NiO is essential for transmitting the spin current from the Pt to YIG layer. On the other hand, the SMR signal becomes negligibly small at low temperature, and both conventional anisotropic magnetoresistance and the anomalous Hall resistance are extremely small at any temperature, implying that the insertion of the NiO has completely suppressed the Pt magnetization induced by the YIG magnetic proximity effect (MPE). The dual roles of the thin NiO layer are, to suppress the magnetic interaction or MPE between Pt and YIG, and to maintain efficient spin current transmission at high temperature. Published by AIP Publishing.
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Pathak, Arjun Kumar. "EXPLORATION OF NEW MULTIFUNCTIONAL MAGNETIC MATERIALS BASED ON A VARIETY OF HEUSLER ALLOYS AND RARE-EARTH COMPOUNDS." OpenSIUC, 2011. https://opensiuc.lib.siu.edu/dissertations/353.

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Magnetic, magnetocaloric, magnetotransport and magnetoelastic properties of Ni-Mn-X (X = In, and Ga) Heusler alloys and La-Fe-Si based rare earth compounds have been synthesized and investigated by x-ray diffraction, magnetization, strain, and electrical resistivity measurements. The phase transitions, magnetic, magnetocaloric, magnetotransport and magnetoelastic properties strongly depend on the composition of these systems. In Ni50Mn50-xInx with x = 13.5, magnetocaloric and magnetotransport properties associated with the paramagnetic martensitic to paramagnetic austenitic transformation were studied. It was shown that magnetic entropy changes (SM) and magnetoresistance (MR) associated with this transformation are larger and the hysteresis effect is significantly lower when compared to that associated with paramagnetic-ferromagnetic transitions or ferromagnetic-antiferromagnetic/paramagnetic transitions in other systems. The Hall resistivity and the Hall angle shows unusual behavior in the vicinity of the martensitic phase transition for Ni50Mn50-xInx with x = 15.2. The observed Hall resistivity and Hall angle are 50 μ*cm and , respectively. It was observed that the presence of Ge, Al and Si atoms on the In sites strongly affects the crystal structure, and the electric and magnetic behaviors of Ni50Mn35In15. It was found that the partial substitution of In atoms by Si in Ni50Mn35In15 results in an increase in the magnetocaloric effect, exchange bias and shape memory effect. In Ni50Mn35In15-xSix, the peak values of positive SM for magnetic field changes H = 5 T were found to depend on composition and vary from 82 Jkg-1K-1 for x = 1 (at T = 275 K) to 124 Jkg-1K-1 for x = 3 (at T = 239 K). The partial substitution of Ni by Co in Ni50Mn35In15 significantly improves the magnetocaloric effect and MR in the vicinity of martensitic transition. In addition, significantly large inverse SM and MR were observed at the inverse martensitic phase transitions of the Ga-based magnetic shape memory Heusler alloys Ni50-xCoxMn32-yFeyGa18. The phase transition temperatures and magnetic properties were found to be correlated with the degree of tetragonal distortion in these samples. In LaFe11.57Si1.43Bx the crystal cell parameters and Curie temperatures were found to increase linearly with increasing B concentration up to ~ 0.1 % and 9 %, respectively. It was found that the characteristics of the magnetocaloric effect of LaFe11.57Si1.43 can be adjusted by a change in B concentration in the LaFe11.57Si1.43Bx system. A study of the influence of a small substitution of Ni, Cu, Cr, and V for Fe in LaFe11.4Si1.6 revealed that the magnetic, magnetocaloric, and magnetovolume coupling constant is related to an increase in the average Fe-Fe interatomic distances, leading to a change in the d-d exchange interaction.
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Kalappattil, Vijaysankar. "Spin Seebeck effect and related phenomena in functional magnetic oxides." Scholar Commons, 2018. https://scholarcommons.usf.edu/etd/7632.

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In recent years, Spin Seebeck effect (SSE) emerges as one of the efficient and easiest ways to generate pure spin current for spintronics devices. In this dissertation, we have systematically studied the SSE and related phenomena like spin Hall magneto-resistance (SMR), anomalous Nernst effect (ANE) in functional magnetic oxides for both fundamental understanding of their origins and practical ways to apply into technological devices. The research has been performed on three different systems of topical interest: (i) Y3Fe5O12 (YIG)/Pt and YIG/C60/Pt, (ii) CoFe2O4 (CFO)/Pt and CFO/C60/Pt, and (iii) Nd0.6Sr0.4MnO3 (NSMO). In case of the YIG/Pt structure, we have achieved a new consensus regarding the temperature dependence of the longitudinal SSE (LSSE). For the first time, we have demonstrated the temperature dependence of LSSE in association with the magnetocrystalline anisotropy (HK) and surface perpendicular magnetic anisotropy field (HKS) of YIG in the same YIG/Pt system. We show that on lowering temperature, the sharp drop in LSSE signal (VLSSE) and the sudden increases in HK and HKS at ~175 K are associated with the spin reorientation due to single ion anisotropy of Fe2+ ions. The VLSSE peak at ~75 K is attributed to the HKS and MS (saturation magnetization) whose peaks also occur at the same temperature. The effects of surface and bulk magnetic anisotropies are corroborated with those of thermally excited magnon number and magnon propagation length to satisfactorily explain the temperature dependence of LSSE in the Pt/YIG system. As a new way to reduce conductivity mismatch, promote spin transport, and tune the spin mixing conductance (G) at the YIG/Pt interface, we have deposited an organic semiconductor (OSC), C60, between ferrimagnetic material (FM) and Pt. Transverse susceptibility study on YIG/C60/Pt has shown that the deposition of C60 has reduced HKS at the surface of YIG significantly, due to the hybridization between the dz2 orbital in Fe and C atoms, leading to the overall increase in spin moments and G and consequently the LSSE. Upon lowering temperature from 300 K, we have observed an exponential increase in LSSE at low temperature (a ~800% increment at 150 K) in this system, which is attributed to the exponential increase in the spin diffusion length of C60 at low temperature. On the other hand, similar experiments on CoFe2O4 (CFO)/C60/Pt show a reduction in the LSSE signal at room temperature, due to the hybridization between the dz2 orbital in Co and C atoms that results in the increased magnetic anisotropy. Upon decreasing the temperature below 150 K, we have interestingly observed that LSSE signal from CFO/C60/Pt exceeds that of CFO/Pt and increases remarkably with temperature. This finding confirms the important role played by the spin diffusion length of C60 in enhancing the LSSE. A systematic study of SMR, SSE, and HKS on the YIG/Pt system using the same YIG single crystal has revealed a low-temperature peak at the same temperature (~75 K) for all the phenomena. Given the distinct origins of the SSE and SMR, our observation points to the difference in spin states between the bulk and surface of YIG as the main reason for such a low-temperature peak, and suggests that the ‘magnon phonon drag’ theory developed to explain the temperature-dependent SSE behavior should be adjusted to include this important effect. SSE and ANE studies on NSMO films have revealed the dominance of ANE over SSE in this class of perovskite-structured materials. The substrate-dependent study of the films shows that compressive strain developed due to the large lattice mismatch from LAO gives rise to the enhanced ANE signal. On the same substrate, ANE signal strength increases as the thickness increases. A sign change in ANE has been observed at a particular temperature, which explains that the Anomalous Hall effect (AHE) and ANE in these systems arise due to intrinsic scattering mechanisms. Overall, we have performed the SSE and related studies on the three important classes of functional magnetic oxide materials. We demonstrate the important role of magnetic anisotropy in manipulating the SSE in these systems. With this knowledge, we have been able to design the novel YIG/C60/Pt and CFO/C60/Pt heterostructures that exhibit the giant SSEs. The organic semiconductor C60 has been explored for the first time as a means of controlling pure spin current in inorganic magnetic oxide/metal heterostructures, paying the way for future spintronic materials and devices.
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Kato, Takashi, Yasuhito Ishikawa, Hiroyoshi Itoh, and Jun-ichiro Inoue. "Intrinsic anisotropic magnetoresistance in spin-polarized two-dimensional electron gas with Rashba spin-orbit interaction." American Physical Society, 2008. http://hdl.handle.net/2237/11252.

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Persson, Anders. "Magnetoresistance and Space : Micro- and Nanofeature Sensors Designed, Manufactured and Evaluated for Space Magnetic Field Investigations." Doctoral thesis, Uppsala universitet, Ångström Space Technology Centre (ÅSTC), 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-151832.

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In recent years, the interest for miniaturization of spaceborne instruments and subsystems has increased steadily, as this enables development of small and lightweight satellite classes as well as more versatile payloads on traditional spacecraft. In essence, this thesis work is an investigation of the applicability of magnetoresistive technology to a magnetometer intended for space. Two types of magnetoresistive sensors, promising with respect to performance competiveness also after considerable miniaturization, were developed and evaluated, namely magnetic tunnel junctions and planar Hall effect bridge sensors. In the case of the magnetic tunnel junctions, much effort was put on the micromanufacturing process. Two schemes were developed and evaluated for sensor contouring: one employing focused ion beam processes for rapid prototyping, and the other combining sputtering and x-ray photoelectron spectroscopy for precise etch depth monitoring during ion etching. For the former, the resulting implantation damages were investigated with chemical analysis and correlated to the sensor properties. In the latter, the depth of the etching was monitored live with a resolution sufficient to stop the etching in the 1 nm thick tunneling barrier. The effect and extent of redeposition were investigated by transmission electron microscopy and micromagnetic analysis. With the knowledge so gained, the tunneling magnetoresistance of the manufactured junctions could be improved significantly and their inherent noise could be reduced. As a step in space flight qualification, the magnetic tunnel junctions were subjected to both g and particle radiation, leaving them unaffected by the first, but rendering them a reduced tunneling magnetoresistance ratio and an increased coercivity by the latter. In the case of the planar Hall effect bridge sensors, their inherent noise was thoroughly investigated, revealing both electric and magnetic 1/f noise at low frequencies along with thermal noise at higher frequencies. In addition, an analytical model of the magnetic properties of the planar Hall effect bridges was developed, and a design process, based on the model, was established to optimize the bridges for a particular application. In conclusion, both types of sensors show great promises for use in space. Of the two, the planar Hall effect bridge sensors had a better detection limit at low frequencies, whereas the magnetic tunnel junctions were more precise at higher frequencies. However, both sensors had a bandwidth greatly exceeding that of traditional spaceborne magnetometers. A magnetometer employing the magnetic tunnel junctions from this work is currently included as payload onboard the Vietnamese satellite F-1 scheduled for launch this year. A magnetometer using magnetoresistive sensors – planar Hall effect sensors, magnetic tunnel junctions, or both – enables a mass reduction of more than two orders of magnitudes compared with traditional systems.
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Books on the topic "Giant Magnetoresistance and Hall effect"

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Kübler, Jürgen. Theory of Itinerant Electron Magnetism, 2nd Edition. 2nd ed. Oxford University Press, 2021. http://dx.doi.org/10.1093/oso/9780192895639.001.0001.

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The book, in the broadest sense, is an application of quantum mechanics and statistical mechanics to the field of magnetism. Under certain well-described conditions, an immensely large number of electrons moving in the solid will collectively produce permanent magnetism. Permanent magnets are of fundamental interest, and magnetic materials are of great practical importance as they provide a large field of technological applications. The physical details describing the many-electron problem of magnetism are presented in this book on the basis of the density-functional approximation. The emphasis is on realistic magnets, for which the equations describing properties of the many-electron problem can only be solved by using computers. The great recent and continuing improvements are, to a very large extent, responsible for the progress in this field. Along with an introduction to the density-functional theory, the book describes representative computational methods and detailed formulas for physical properties of magnets, which include among other things the computation of magnetic ordering temperatures, the giant magnetoresistance, magneto-optical effects, weak ferromagnetism, the anomalous Hall and Nernst effects, and novel quasiparticles, such as Weyl fermions and magnetic skyrmions.
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Valenzuela, S. O., and T. Kimura. Experimental observation of the spin Hall effect using electronic nonlocal detection. Oxford University Press, 2017. http://dx.doi.org/10.1093/oso/9780198787075.003.0014.

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This chapter shows how the spin Hall effect (SHE) has been described as a source of spin-polarized electrons for electronic applications without the need for ferromagnets or optical injection. Because spin accumulation does not produce an obvious measurable electrical signal, electronic detection of the SHE proved to be elusive and was preceded by optical demonstrations. Several experimental schemes for the electronic detection of the SHE had been originally proposed, including the use of ferromagnetic electrodes to determine the spin accumulation at the edges of the sample. However, the difficulty of sample fabrication and the presence of spin-related phenomena such as anisotropic magnetoresistance or the anomalous Hall effect in the ferromagnetic electrodes could mask or even mimic the SHE signal in the sample layouts.
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Maekawa, Sadamichi, Sergio O. Valenzuela, Eiji Saitoh, and Takashi Kimura, eds. Spin Current. Oxford University Press, 2017. http://dx.doi.org/10.1093/oso/9780198787075.001.0001.

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Since the discovery of the giant magnetoresistance effect in magnetic multilayers in 1988, a new branch of physics and technology, called spin-electronics or spintronics, has emerged, where the flow of electrical charge as well as the flow of electron spin, the so-called “spin current,” are manipulated and controlled together. The physics of magnetism and the application of spin current have progressed in tandem with the nanofabrication technology of magnets and the engineering of interfaces and thin films. This book aims to provide an introduction and guide to the new physics and applications of spin current, with an emphasis on the interaction between spin and charge currents in magnetic nanostructures.
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Kimura, T. Introduction of spin torques. Oxford University Press, 2017. http://dx.doi.org/10.1093/oso/9780198787075.003.0019.

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This chapter discusses the spin-transfer effect, which is described as the transfer of the spin angular momentum between the conduction electrons and the magnetization of the ferromagnet that occurs due to the conservation of the spin angular momentum. L. Berger, who introduced the concept in 1984, considered the exchange interaction between the conduction electron and the localized magnetic moment, and predicted that a magnetic domain wall can be moved by flowing the spin current. The spin-transfer effect was brought into the limelight by the progress in microfabrication techniques and the discovery of the giant magnetoresistance effect in magnetic multilayers. Berger, at the same time, separately studied the spin-transfer torque in a system similar to Slonczewski’s magnetic multilayered system and predicted spontaneous magnetization precession.
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Cao, Gang, and Lance DeLong. Physics of Spin-Orbit-Coupled Oxides. Oxford University Press, 2021. http://dx.doi.org/10.1093/oso/9780199602025.001.0001.

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Prior to 2010, most research on the physics and chemistry of transition metal oxides was dominated by compounds of the 3d-transition elements such as Cr, Mn, Fe, Co, Ni, and Cu. These materials exhibited novel, important phenomena that include giant magnetoresistance in manganites, as well as high-temperature superconductivity in doped La2CuO4 and related cuprates. The discovery in 1994 of an exotic superconducting state in Sr2RuO4 shifted some interest toward ruthenates. Moreover, the realization in 2008 that a novel variant of the classic Mott metal-insulator transition was at play in Sr2IrO4 provided the impetus for a burgeoning group of studies of the influence of strong spin-orbit interactions in “heavy” (4d- and 5d-) transition-element oxides. This book reviews recent experimental and theoretical evidence that the physical and structural properties of 4d- and 5d-oxides are decisively influenced by strong spin-orbit interactions that compete or collaborate with comparable Coulomb, magnetic exchange, and crystalline electric field interactions. The combined effect leads to unusual ground states and magnetic frustration that are unique to this class of materials. Novel couplings between the orbital/lattice and spin degrees of freedom, which lead to unusual types of magnetic order and other exotic phenomena, challenge current theoretical models. Of particular interest are recent investigations of iridates and ruthenates focusing on strong spin-orbit interactions that couple the lattice and spin degrees of freedom.
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Book chapters on the topic "Giant Magnetoresistance and Hall effect"

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Chambers, R. G. "Magnetoresistance." In Quantum Hall Effect: A Perspective, 89–113. Dordrecht: Springer Netherlands, 1989. http://dx.doi.org/10.1007/978-94-010-9709-3_7.

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Swagten, H. J. M., M. M. H. Willekens, and W. J. M. Jonge. "The Giant Magnetoresistance Effect." In Frontiers in Magnetism of Reduced Dimension Systems, 471–99. Dordrecht: Springer Netherlands, 1998. http://dx.doi.org/10.1007/978-94-011-5004-0_25.

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Chambers, R. G. "Magnetoresistance and Hall Effect." In Electronics in Metals and Semiconductors, 146–60. Dordrecht: Springer Netherlands, 1990. http://dx.doi.org/10.1007/978-94-009-0423-1_11.

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Balogh, J., A. Gábor, D. Kaptás, L. F. Kiss, M. Csontos, A. Halbritter, I. Kézsmárki, and G. Mihály. "Giant Magnetoresistance of a Single Interface." In Kondo Effect and Dephasing in Low-Dimensional Metallic Systems, 181–84. Dordrecht: Springer Netherlands, 2001. http://dx.doi.org/10.1007/978-94-010-0427-5_19.

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Matsukura, F. "Ga1–xMnxAs: conductivity, resistivity, magnetoresistance, Hall effect." In New Data and Updates for III-V, II-VI and I-VII Compounds, 189–91. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-540-92140-0_142.

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Dietl, Tomasz, Fumihiro Matsukura, Hideo Ohno, Joël Cibert, and David Ferrand. "Hall Effect and Magnetoresistance in P-Type Ferromagnetic Semiconductors." In Recent Trends in Theory of Physical Phenomena in High Magnetic Fields, 197–210. Dordrecht: Springer Netherlands, 2003. http://dx.doi.org/10.1007/978-94-010-0221-9_16.

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Murata, K., M. Ishibashi, Y. Honda, T. Komazaki, M. Tokumoto, N. Kinoshita, and H. Anzai. "Electronic Properties in (BEDT-TTF)2X: Magnetoresistance and Hall Effect." In Springer Proceedings in Physics, 224–27. Berlin, Heidelberg: Springer Berlin Heidelberg, 1990. http://dx.doi.org/10.1007/978-3-642-75424-1_49.

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Ong, N. P., T. W. Jing, T. R. Chien, D. A. Brawner, Z. Z. Wang, and J. M. Tarascon. "The Hall Effect and Magnetoresistance of the High-Temperature Cuprate Superconductors." In Springer Proceedings in Physics, 247–54. Berlin, Heidelberg: Springer Berlin Heidelberg, 1992. http://dx.doi.org/10.1007/978-3-642-77154-5_49.

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Bratkovsky, A. M. "Giant Negative Magnetoresistance and Strong Electron-Lattice Coupling in Amorphous Semiconductors with Magnetic Impurities." In Vibronic Interactions: Jahn-Teller Effect in Crystals and Molecules, 133–40. Dordrecht: Springer Netherlands, 2001. http://dx.doi.org/10.1007/978-94-010-0985-0_14.

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Loboda, V. B., M. Ya Dovzhyk, V. O. Kravchenko, S. M. Khursenko, and Yu O. Shkurdoda. "On the Possibility of Training Demonstration of the Giant Magnetoresistance Effect in Higher School." In Lecture Notes in Mechanical Engineering, 81–88. Singapore: Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-13-6133-3_8.

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Conference papers on the topic "Giant Magnetoresistance and Hall effect"

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Yoo, JinHyeong, James B. Restorff, and Marilyn Wun-Fogle. "Non-Contact Tension Sensing Using Fe-Ga Alloy Strip." In ASME 2015 Conference on Smart Materials, Adaptive Structures and Intelligent Systems. American Society of Mechanical Engineers, 2015. http://dx.doi.org/10.1115/smasis2015-8909.

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This paper describes a proof-of-concept non-contact strain sensor, using a magnetostrictive Fe-Ga alloy (Galfenol). Magnetostrictive materials demonstrate dimensional changes in response to a magnetic field. In contrast with typical piezoceramic materials, Galfenol is the most ductile of the current transduction materials and appears to have an excellent ability to withstand mechanical shock and tension. Galfenol also exhibits the inverse (Villari) effect: both the magnetization and permeability change in response to an applied stress. Galfenol has low hysteresis loses, less than ∼10% of its transduction potential over a range of −20 to +80 °C. The magnetization’s response to stress depends strongly on both magnetic field bias and alloy composition. Galfenol’s Villari effect can be used in various sensor configurations together with either a giant magnetoresistance (GMR) sensor, Hall Effect sensor or pickup coil to sense the magnetization / permeability changes in Galfenol when stressed. The sensor described in this paper utilizes the permeability change, which is not time dependent and can measure static loads. The design reported here targets low force, low frequency applications, such as inclination measurements and stress monitoring. The sensor was able to measure both static and dynamic stress. The static sensitivity was +3.64 Oe/kN for the Hall sensor close to the bias magnet and −1.49 Oe/kN for the Hall sensor at the other end of the Galfenol strip. We conclude that a Galfenol strain sensor is a viable candidate for bolt stress monitoring in critical applications.
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Wen, Zhenchao, Takahide Kubota, Tatsuya Y. Arnamoto, and Koki Takanashi. "Enhanced Current-Perpendicular-to-Plane Giant Magnetoresistance Effect in Half-Metallic NiMnSb Heusler Alloy Based Nano-Junctions with Multiple Ag Spacers." In 2016 International Conference of Asian Union of Magnetics Societies (ICAUMS). IEEE, 2016. http://dx.doi.org/10.1109/icaums.2016.8479999.

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Ruotolo, A., and D. Li. "Giant Photo-Hall Effect in Metals." In 2018 IEEE International Magnetic Conference (INTERMAG). IEEE, 2018. http://dx.doi.org/10.1109/intmag.2018.8508574.

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Shkurdoda, Yu O., A. M. Chornous, A. P. Kharchenko, A. G. Basov, and L. V. Dekhtyaruk. "Effect of giant magnetoresistance in a symmetric magnetically sandwich." In 2016 International Conference on Nanomaterials: Application & Properties (NAP). IEEE, 2016. http://dx.doi.org/10.1109/nap.2016.7757282.

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Thiyagarajah, N., Y. Lau, D. Betto, K. Borisov, J. Coey, P. S. Stamenov, and K. Rode. "Giant spontaneous hall effect in zero-moment Mn2RuxGa." In 2015 IEEE International Magnetics Conference (INTERMAG). IEEE, 2015. http://dx.doi.org/10.1109/intmag.2015.7157431.

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Merzlikin, A. M., A. P. Vinogradov, M. Inoue, and A. B. Granovsky. "Giant photonic Hall effect in magneto-photonic crystals." In Proceedings of the Symposium R. WORLD SCIENTIFIC, 2005. http://dx.doi.org/10.1142/9789812701718_0017.

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Zhang, Rong Jun, Liang-Yao Chen, Shi-Ming Zhou, Yu Wang, Bo Xu, Dong-Liang Qian, Wei-Ming Zheng, and Yu-Xiang Zheng. "Giant magnetoresistance effect in granular-type Co-Ag/Ag multilayers." In Third International Conference on Thin Film Physics and Applications, edited by Shixun Zhou, Yongling Wang, Yi-Xin Chen, and Shuzheng Mao. SPIE, 1998. http://dx.doi.org/10.1117/12.300729.

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Murzina, T. V., T. V. Misuryaev, A. E. Kravets, A. A. Nikulin, and O. A. Aktsipetrov. "Magnetic dots: giant magnetoresistance and nonlinear magneto-optical Kerr effect." In CLEO 2001. Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Technical Digest. IEEE, 2001. http://dx.doi.org/10.1109/cleo.2001.947573.

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Phetchakul, T., P. Taisettavatkul, W. Pengchan, W. Yamwong, and A. Poyai. "The new design for magnetoresistance effect on Hall plate structure." In 2012 9th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON 2012). IEEE, 2012. http://dx.doi.org/10.1109/ecticon.2012.6254189.

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Sakuraba, Takahito, Masamichi Sakai, Tastuya Arai, Yusuke Tanaka, Hiroaki Hirama, Zentaro Honda, Akira Kitajima, Koji Higuchi, Akihiro Oshima, and Shigehiko Hasegawa. "Hall Effect and Magnetoresistance in GdxY1−xH2(x\( \fallingdotseq \) 0.4)." In Proceedings of the 12th Asia Pacific Physics Conference (APPC12). Journal of the Physical Society of Japan, 2014. http://dx.doi.org/10.7566/jpscp.1.012009.

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Reports on the topic "Giant Magnetoresistance and Hall effect"

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Gonis, Antonios, and Bruce Guerney. Numerical Modeling of Giant Magnetoresistance Effect for Application to Magnetic Data Storage Final Report CRADA No. TC-0504-93. Office of Scientific and Technical Information (OSTI), March 2018. http://dx.doi.org/10.2172/1431005.

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Gonis, A. Numerical Modeling of Giant Magnetoresistance Effect for Application to Magnetic Data Storage Final Report CRADA No. TC-0504-93. Office of Scientific and Technical Information (OSTI), October 1996. http://dx.doi.org/10.2172/756989.

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Butler, W. H., and B. A. Gurney. Numerical modeling of giant magnetoresistance effect for application to magnetic data storage. CRADA final report for CRADA number Y-1293-0175. Office of Scientific and Technical Information (OSTI), September 1996. http://dx.doi.org/10.2172/461241.

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Butler, W. H., and B. A. Gurney. Numerical modeling of giant magnetoresistance effect for application to magnetic data storage. Project accomplishment summary report for 93-MULT-116-D1-04. Office of Scientific and Technical Information (OSTI), September 1996. http://dx.doi.org/10.2172/446402.

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