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Journal articles on the topic 'GeTe alloys'

Author: Grafiati

Published: 4 May 2024

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1

Cao, Yiqi, Zhigang Li, Jianbo Wu, Xiaohua Huang, and Shengnan Zhang. "Electrical Properties of GeTe-based Ternary Alloys." Journal of Wuhan University of Technology-Mater. Sci. Ed. 33, no. 2 (April 2018): 472–75. http://dx.doi.org/10.1007/s11595-018-1847-2.

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2

Bu, Zhonglin, Xinyue Zhang, Bing Shan, Jing Tang, Hongxia Liu, Zhiwei Chen, Siqi Lin, Wen Li, and Yanzhong Pei. "Realizing a 14% single-leg thermoelectric efficiency in GeTe alloys." Science Advances 7, no. 19 (May 2021): eabf2738. http://dx.doi.org/10.1126/sciadv.abf2738.

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GeTe alloys have recently attracted wide attention as efficient thermoelectrics. In this work, a single-leg thermoelectric device with a conversion efficiency as high as 14% under a temperature gradient of 440 K was fabricated on the basis of GeTe-Cu2Te-PbSe alloys, which show a peak thermoelectric figure of merit (zT) > 2.5 and an average zT of 1.8 within working temperatures. The high performance of the material is electronically attributed to the carrier concentration optimization and thermally due to the strengthened phonon scattering, the effects of which all originate from the defects in the alloys. A design of Ag/SnTe/GeTe contact successfully enables both a prevention of chemical diffusion and an interfacial contact resistivity of 8 microhm·cm2 for the realization of highly efficient devices with a good service stability/durability. Not only the material’s high performance but also the device’s high efficiency demonstrated the extraordinariness of GeTe alloys for efficient thermoelectric waste-heat recovery.

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3

Zhang, Xinyue, Juan Li, Xiao Wang, Zhiwei Chen, Jianjun Mao, Yue Chen, and Yanzhong Pei. "Vacancy Manipulation for Thermoelectric Enhancements in GeTe Alloys." Journal of the American Chemical Society 140, no. 46 (September 28, 2018): 15883–88. http://dx.doi.org/10.1021/jacs.8b09375.

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4

Srinivasan, Bhuvanesh, David Berthebaud, and Takao Mori. "Is LiI a Potential Dopant Candidate to Enhance the Thermoelectric Performance in Sb-Free GeTe Systems? A Prelusive Study." Energies 13, no. 3 (February 3, 2020): 643. http://dx.doi.org/10.3390/en13030643.

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As a workable substitute for toxic PbTe-based thermoelectrics, GeTe-based materials are emanating as reliable alternatives. To assess the suitability of LiI as a dopant in thermoelectric GeTe, a prelusive study of thermoelectric properties of GeTe1−xLiIx (x = 0–0.02) alloys processed by Spark Plasma Sintering (SPS) are presented in this short communication. A maximum thermoelectric figure of merit, zT ~ 1.2, was attained at 773 K for 2 mol% LiI-doped GeTe composition, thanks to the combined benefits of a noted reduction in the thermal conductivity and a marginally improved power factor. The scattering of heat carrying phonons due to the presumable formation of Li-induced “pseudo-vacancies” and nano-precipitates contributed to the conspicuous suppression of lattice thermal conductivity, and consequently boosted the zT of the Sb-free (GeTe)0.98(LiI)0.02 sample when compared to that of pristine GeTe and Sb-rich (GeTe)x(LiSbTe2)2 compounds that were reported earlier.

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5

Krbal, Milos, Alexander V. Kolobov, Paul Fons, Kiyofumi Nitta, Tomoya Uruga, and Junji Tominaga. "Investigation of the oxidation process in GeTe-based phase change alloy using Ge K-edge XANES spectroscopy." Pure and Applied Chemistry 91, no. 11 (November 26, 2019): 1769–75. http://dx.doi.org/10.1515/pac-2018-1229.

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Abstract In this work, we clearly demonstrate the efficacy of using XANES spectroscopy in conjunction with a Pilatus detector as a sensitive tool to allow the study of the oxidation process in GeTe alloys via depth profile analysis. On the basis of Ge K-edge XANES spectra, it was found that GeTe alloys do not oxidize readily after an initial native surface oxidation that occurs upon exposure to oxygen in the air at the elevated temperatures, 100 °C and 330 °C. We demonstrate that amorphous GeTe possesses a higher predisposition to oxidation than crystalline GeTe when exposed to the air at temperature of 100 °C. When the temperature is set to 330 °C in an air ambient, we show that the amorphous to crystal phase transition affects the oxidation process more significantly than the simple annealing of crystalline GeTe. We suggest that the higher tendency of GeTe films to oxidize during the phase transition is a consequence of the breaking of Ge–Ge bonds in the presence of oxygen atoms which subsequently leads to the extra formation of Ge–O bonds during crystallization.

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6

Ebrahimi, F., D. Liu, H. Engelhardt, and M. Rettenmayr. "Morphology Control During Heat Treatment of GeTe-PbTe Alloys." Practical Metallography 57, no. 4 (April 15, 2020): 250–59. http://dx.doi.org/10.3139/147.110605.

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7

Dong, Yongkwan, Abds-Sami Malik, and Francis J. DiSalvo. "High Power Factor of HPHT-Sintered GeTe-AgSbTe2 Alloys." Journal of Electronic Materials 40, no. 1 (October 1, 2010): 17–24. http://dx.doi.org/10.1007/s11664-010-1383-1.

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8

Mukhtarova, Ziyafat. "Фазовые равновесия в системе Sm2Te3–GeTe." Kondensirovannye sredy i mezhfaznye granitsy = Condensed Matter and Interphases 21, no. 2 (June 15, 2019): 328–33. http://dx.doi.org/10.17308/kcmf.2019.21/770.

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Методами физико-химического анализа – дифференциально-термическим, высокотемпературным дифференциально-термическим, рентгенофазовым, микроструктурным, а также измерением микротвердости изучена система Sm2Te3–GeTe, которая является квазибинарным сечением тройной системы Ge–Sm–Te. При соотношении исходных теллуридов 1:1 (50 мол. %) и температуре 1100 К по перитектической реакции ж+Sm2Te3→ GeSm2Te4 образуется тройное соединение GeSm2Te4. Образцы системы, богатые GeTe, представляют собой компактные слитки блестяще-серого цвета, а сплавы, бо-гатые Sm2Te3 – спек черного цвета. Ликвидус системы Sm2Te3–GeTe состоит из трех ветвей: Sm2Te3, GeSm2Te4 и a-твердых растворов на основе GeTe. Рентгенофазовый анализ закристаллизованных образцов показал, что набор рентгеновских отражений соответствует фазам Sm2Te3, GeSm2Te4 и a-твердых растворов на основе GeTe. Установлено образование инконгруэнтно плавящегося соединения состава GeSm2Te4, которое может использоваться как термоэлектрический материал. На основе GeTe образуется узкая область твердого раствора REFERENCES Kohri H., Shiota , Kato M., Ohsugi J., Goto T. Synthesis and Thermolelectric Properties of Bi2Te3–GeTe Pseudo Binary System. Advances in Science and Technology, 2006, v. 46, pp. 168-173. https://doi.org/10.4028/www.scientifi c.net/ST.46.168 Gelbstein Y., Dado B., Ben-Yehuda O., Sadia Y., Dashevsky Z. and Dariel M. P. Highly effi cient Ge-Rich GexPb1-x Te thermoelectric alloys. Journal of Electronic Materials, 2010, v. 39(9), pp. 2049–2052. https://doi.org/10.1007/s11664-009-1012-z Gelbstein Y., Davidow J., Girard S.N., Chung D. Y. and Kanatzidis M. Controlling Metallurgical Phase Separation Reactions of the Ge0.87 Pb0.13Te Alloy for High Thermoelectric Performance. Advanced Energy Materials, 2013, v. 3, pp. 815–820. https://doi.org/10.1002/aenm.201200970 Gelbstein Y., Dashevsky Z. and Dariel M. P. Highly efficient bismuth telluride doped p-type Pb0.13Ge0.87Te for thermoelectric applications. Physical Status Solidi, 2007, v. 1(6), pp. 232–234. https://doi.org/10.1002/pssr.200701160 Gelbstein Y., Ben-Yehuda O., Dashevsky Z. and Dariel M. P. Phase transitions of p-type (Pb,Sn,Ge)Tebased alloys for thermoelectric applica tions. Journal of Crystal Growth, 2009, v. 311(18), pp. 4289–4292. https://doi.org/10.1007/s11664-008-0652-8 Gelbstein Y., Ben-Yehuda O., Pinhas E., et al. Thermoelectric properties of (Pb,Sn,Ge) Te-based alloys. Journal of Electronic Materials, 2009, v. 38(7), 1478–1482. https://doi.org/10.1007/s11664-008-0652-8 Li J., Chen Z., Zhang X., Sun Y., Yang J., Pei Y. Electronic origin of the high thermo- electric performance of GeTe among the p-type group IV monotellurides. NPG Asia Materials, 2017, v. 9, p. 353. https://doi.org/10.1038/am.2017.8 Sante D. Di., Barone P., Bertacco R., Picozzi S. Electric control of the giant rashba effect in bulk GeTe. Advanced materials, 2013, v. 25(27), pp. 3625–3626. https://doi.org/10.1002/adma.201203199 Li J., Zhang X., Lin S., Chen Z., Pei Y. Realizing the high thermoelectric performance of GeTe by Sbdoping and Se-alloying. Mater., 2017, v. 29(2), pp. 605–611. https://doi.org/10.1021/acs.chemmater.6b04066 Abrikosov N. Kh., Shelimova L. B. Poluprovodnikovye materialy na osnove soedineniy AIV BVI. [Semiconductor materials based on compounds АIV В]. Moscow, Nauka Publ., 1975, 195 p. (in Russ.) Korzhuev M. A. Vliyaniye legirovaniya na parametric of GeTe. Series 6. [Effect of doping on GeTe Series 6]. Moscow, 1983, no. 6 (179), pp. 33–36. (in Russ.) Okoye I. Electronic and optical properties of SnTe and GeTe. Journal of Physics: Condensed Matter, 2002, 14(36), pp. 8625–8637. https://doi.org/10.1088/0953-8984/14/36/318 Gelbstein Y., Rosenberg Y., Sadia Y. and Dariel M. P. Thermoelectric properties evolution of spark plasma sintered (Ge0.6Pb0.3Sn0.1)Te following a spinodal decomposition. Journal of Physical Chemistry, 2010, v. 114(30), pp. 13126–13131. https://doi.org/10.1021/jp103697s Rosenthal T., Schneider N., Stiewe C., Düblinger M., Oeckler O. Real Structure and thermoelectric properties of GeTe-rich germanium antimony tellurides. Mater., 2011, v. 23(19), pp. 4349–4356. https://doi.org/10.1021/cm201717z Li J., Chen Z., Zhang X., Yu H., Wu Z., Xie H., Chen Y., Pei Y. Simultaneous optimization of carrier concentration and alloy scattering for ultrahigh. Mater., 2017, v. 4(12), p. 341. https://doi.org/10.1002/advs.201700341 Bletskan D. I. Phase equilibrium in the system AIV-BVI-part II: systems germanium-chalcogen. Journal of Ovonic Research, 2005, v. 1(5), p. 53–60. Li S. P., Li J. Q., Wang Q. B., Wang L., Liu F. S., Ao W. Q. Synthesis and thermoelectric properties of the (GeTe)1-x(PbTe)x alloys. Solid State Sciences, 2011, v. 13(2), pp. 399–403. https://doi.org/10.1016/j.solidstatesciences. 2010.11.045 Gelbstein Y., Dado B., Ben-Yehuda O., Sadia Y., Dashevsky Z., Dariel M. P. High thermoelectric fi gure of merit and nanostructuring in bulk p-type Gex(SnyPb1–y)1–x Te alloys following a spinodal decomposition reaction. Chemistry of Materials, 2010, v. 22(3), pp. 1054–1058. https://doi.org/10.1021/cm902009t Yarembash E. I., Eliseev A. A. Khal’kogenidy redkozemel’nykh elementov: sintez i kristallokhimiya [Chalcogenides of rare-earth elements: synthesis and crystal chemistry]. Moscow, Nauka Publ., 1975, p. 258. (in Russ.) Mukhtarova Z. M., Bakhtiyarly I. B., Azhdarova D. S. Politermicheskoye secheniye Ge0.80 Te0.20–Sm0.80 Te0.20. khim. zhurn., 2010, no. 4, pp. 144–146. Mukhtarova Z. M., Bakhtiyarly I. B., Azhdarova D. S. Issledovaniye politermicheskogo secheniye Ge0.84Te0.16–Sm5Ge2Te7 v troynoy sisteme Ge–Te–Sm. Aze-rb. khim. zhurn., 2011, no. 4, pp. 57–59.

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9

Herrmann, Markus Guido, Ralf Peter Stoffel, Michael Küpers, Mohammed Ait Haddouch, Andreas Eich, Konstantin Glazyrin, Andrzej Grzechnik, Richard Dronskowski, and Karen Friese. "New insights on the GeSe x Te1−x phase diagram from theory and experiment." Acta Crystallographica Section B Structural Science, Crystal Engineering and Materials 75, no. 2 (March 27, 2019): 246–56. http://dx.doi.org/10.1107/s2052520619001847.

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The high-pressure and low-temperature behaviour of the GeSe x Te1−x system (x = 0, 0.2, 0.5, 0.75, 1) was studied using a combination of powder diffraction measurements and first-principles calculations. Compounds in the stability field of the GeTe structure type (x = 0, 0.2, 0.5) follow the high-pressure transition pathway: GeTe-I (R3m) → GeTe-II (f.c.c.) → GeTe-III (Pnma). The newly determined GeTe-III structure is isostructural to β-GeSe, a high-pressure and high-temperature polymorph of GeSe. Pressure-dependent formation enthalpies and stability regimes of the GeSe x Te1−x polymorphs were studied by DFT calculations. Hexagonal Ge4Se3Te is stable up to at least 25 GPa. Significant differences in the high-pressure and low-temperature behaviour of the GeTe-type structures and the hexagonal phase are highlighted. The role of Ge...Ge interactions is elucidated using the crystal orbital Hamilton population method. Finally, a sketch of the high-pressure phase diagram of the system is provided.

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10

Wang, Longquan, Junqin Li, Chunxiao Zhang, Teng Ding, Yucheng Xie, Yu Li, Fusheng Liu, Weiqin Ao, and Chaohua Zhang. "Discovery of low-temperature GeTe-based thermoelectric alloys with high performance competing with Bi2Te3." Journal of Materials Chemistry A 8, no. 4 (2020): 1660–67. http://dx.doi.org/10.1039/c9ta11901a.

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11

Bragaglia, Valeria, Antonio M. Mio, and Raffaella Calarco. "Thermal annealing studies of GeTe-Sb2Te3 alloys with multiple interfaces." AIP Advances 7, no. 8 (August 2017): 085113. http://dx.doi.org/10.1063/1.5000338.

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12

Kretova, M. A., E. S. Avilov, and M. A. Korzhuev. "Thermoelectric and Mechanical Properties of Polycrystalline Yttrium-Containing GeTe Alloys." Russian Metallurgy (Metally) 2020, no. 4 (April 2020): 387–95. http://dx.doi.org/10.1134/s0036029520040151.

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13

Peng, Wanyue, David M. Smiadak, Michael G. Boehlert, Spencer Mather, Jared B. Williams, Donald T. Morelli, and Alexandra Zevalkink. "Lattice hardening due to vacancy diffusion in (GeTe)mSb2Te3 alloys." Journal of Applied Physics 126, no. 5 (August 7, 2019): 055106. http://dx.doi.org/10.1063/1.5108659.

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14

Shabaldin A. A., Samunin A.Yu., Konstantinov P.P, Novikov S.V., Burkov A.T., Bu Zhonglin, and Pei Yanzhong. "Effect of thermal history on the properties of efficient thermoelectric alloys Ge-=SUB=-0.86-=/SUB=-Pb-=SUB=-0.1-=/SUB=-Bi-=SUB=-0.04-=/SUB=-Te." Semiconductors 56, no. 3 (2022): 203. http://dx.doi.org/10.21883/sc.2022.03.53053.34.

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In this work, we study thermoelectric properties of GeTei-based alloys, doped with bismuth, with partial substitution of lead for germanium: Ge0.86Pb0.1Bi0.04Te. The aim of the study is to explore the possibility of increasing the thermoelectric efficiency of a compound by combining optimal doping and isovalent substitution to improve the electronic properties with a simultaneous decrease of the lattice thermal conductivity. We studied alloy samples prepared in two different research laboratories using similar, but not completely identical procedures. It is shown that the electronic (thermoelectric power and electrical conductivity) properties of the samples of the two groups are in good agreement with each other. The properties of alloys depend on the thermal history of the samples due to the presence at temperatures of 600-800 K of a phase transition from a low-temperature rhombohedral to a high-temperature cubic structural modification and missibility gap in GeTe-PbTe quasibinary system below 870 K. The thermoelectric figure of merit of alloys reaches a maximum value of 1.5 at a temperature of about 750 K. Keywords: thermoelectric alloys, thermoelectric power, electrical conductivity, thermal conductivity

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15

Díaz Fattorini, Adriano, Caroline Chèze, Iñaki López García, Christian Petrucci, Marco Bertelli, Flavia Righi Riva, Simone Prili, et al. "Growth, Electronic and Electrical Characterization of Ge-Rich Ge–Sb–Te Alloy." Nanomaterials 12, no. 8 (April 13, 2022): 1340. http://dx.doi.org/10.3390/nano12081340.

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In this study, we deposit a Ge-rich Ge–Sb–Te alloy by physical vapor deposition (PVD) in the amorphous phase on silicon substrates. We study in-situ, by X-ray and ultraviolet photoemission spectroscopies (XPS and UPS), the electronic properties and carefully ascertain the alloy composition to be GST 29 20 28. Subsequently, Raman spectroscopy is employed to corroborate the results from the photoemission study. X-ray diffraction is used upon annealing to study the crystallization of such an alloy and identify the effects of phase separation and segregation of crystalline Ge with the formation of grains along the [111] direction, as expected for such Ge-rich Ge–Sb–Te alloys. In addition, we report on the electrical characterization of single memory cells containing the Ge-rich Ge–Sb–Te alloy, including I-V characteristic curves, programming curves, and SET and RESET operation performance, as well as upon annealing temperature. A fair alignment of the electrical parameters with the current state-of-the-art of conventional (GeTe)n-(Sb2Te3)m alloys, deposited by PVD, is found, but with enhanced thermal stability, which allows for data retention up to 230 °C.

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Alakbarova, T. M., E. N. Orujlu, D. M. Babanly, S. Z. Imamaliyeva, and M. B. Babanly. "Solid-phase equilibria in the GeBi2Te4-Bi2Te3-Te system and thermodynamic properties of compounds of the GeTe·mBi2Te3 homologous series." Physics and Chemistry of Solid State 23, no. 1 (January 27, 2022): 25–33. http://dx.doi.org/10.15330/pcss.23.1.25-33.

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The GeBi2Te4-Bi2Te3-Te system was investigated by XRD and EMF measurements of the reversible concentration cell of the type (-) GeTe (solid) │glycerol +KCl │ Ge-Bi-Тe (solid) (+) in the 300-450K temperature range. It was shown that, in the indicated temperature range, elementary tellurium forms tie lines with all telluride phases of the system. Equations for the temperature dependencies of EMF in all phase regions have been obtained from the data of EMF measurements, from which the partial thermodynamic functions of GeTe in alloys have been calculated. The partial molar functions of germanium in alloys were determined by combining obtained data with the thermodynamic functions of GeTe. Standard Gibbs free energy and enthalpy of formation, as well as the standard entropy of the GeBi2Te4, GeBi4Te7, GeBi6Te10 compounds and solid solutions based on Bi2Te3 have been calculated using these data, solid-phase equilibrium diagram of the GeBi2Te4-Bi2Te3-Te system, and corresponding thermodynamic functions of Bi2Te3.

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17

Shakhnazarov, K. Yu, A. V. Mikhailov, and D. V. Tzykanov. "The relationship between the anomalies of the properties of alloys with a semiconductor component and special features of glass formation and state diagrams." Vektor nauki Tol'yattinskogo gosudarstvennogo universiteta, no. 4 (2020): 67–77. http://dx.doi.org/10.18323/2073-5073-2020-4-67-77.

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The analysis of literature data on the properties of alloys with a semiconductor component shows a significant number of anomalies of physical and mechanical properties left without a comment of the researchers of these alloys. Based on the anomalies in the properties of twelve alloys (Ge–Si, InAs–GaP, GaSb–GaAs, HgTe–CdTe, GaSe–GaS, InSb–AlSb, PbSe–GeTe, Zn–Ge, Ti–Ge, Ge–Tl, ZnTe–HgTe, P–As), the paper attempts to identify a regularity that allows associating these anomalies with state diagrams. For the first time, the authors introduce the concept of phase diagram as a concentration dependence of qualitative changes in crystallization intervals, which allows associating phase diagram with the extremes of physical and mechanical properties of industrially used alloys with a semiconductor component that cannot be explained by the peculiarities of phase composition or structure. The second part of the paper deals with the special aspects of glass formation (amorphization) of multicomponent alloys. Modern literature expresses mutually exclusive judgments about the possibility of using phase equilibrium diagrams to predict the ability to glass-formation, which is well-founded and is probably associated with the absence of a general theory of glass formation. Nevertheless, the analysis of literature data on SiO2–Na2O, Ge–S, GeSe–Se, S–Se alloys shows that the glass formation (amorphization) boundaries are associated with phase diagrams. Based on the identified criterion, the paper shows the possibility of using equilibrium state diagrams built for slow-cooled alloys to predict the glass-forming ability of (fast-cooled) alloys.

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18

Feng, Yamei, Junqin Li, Yu Li, Teng Ding, Chunxiao Zhang, Lipeng Hu, Fusheng Liu, Weiqin Ao, and Chaohua Zhang. "Band convergence and carrier-density fine-tuning as the electronic origin of high-average thermoelectric performance in Pb-doped GeTe-based alloys." Journal of Materials Chemistry A 8, no. 22 (2020): 11370–80. http://dx.doi.org/10.1039/d0ta02758h.

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19

Vinod, E. M., A. K. Singh, R. Ganesan, and K. S. Sangunni. "Effect of selenium addition on the GeTe phase change memory alloys." Journal of Alloys and Compounds 537 (October 2012): 127–32. http://dx.doi.org/10.1016/j.jallcom.2012.05.064.

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20

Wang, Xudong, Xueyang Shen, Suyang Sun, and Wei Zhang. "Tailoring the Structural and Optical Properties of Germanium Telluride Phase-Change Materials by Indium Incorporation." Nanomaterials 11, no. 11 (November 12, 2021): 3029. http://dx.doi.org/10.3390/nano11113029.

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Chalcogenide phase-change materials (PCMs) based random access memory (PCRAM) enter the global memory market as storage-class memory (SCM), holding great promise for future neuro-inspired computing and non-volatile photonic applications. The thermal stability of the amorphous phase of PCMs is a demanding property requiring further improvement. In this work, we focus on indium, an alloying ingredient extensively exploited in PCMs. Starting from the prototype GeTe alloy, we incorporated indium to form three typical compositions along the InTe-GeTe tie line: InGe3Te4, InGeTe2 and In3GeTe4. The evolution of structural details, and the optical properties of the three In-Ge-Te alloys in amorphous and crystalline form, was thoroughly analyzed via ab initio calculations. This study proposes a chemical composition possessing both improved thermal stability and sizable optical contrast for PCM-based non-volatile photonic applications.

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21

Jongenelis, A. P. J. M., J. H. Coombs, W. van Es‐Spiekman, and B. A. J. Jacobs. "Laser‐induced crystallization phenomena in GeTe‐based alloys. III. GeTeSe alloys for a CD compatible erasable disk." Journal of Applied Physics 79, no. 11 (June 1996): 8349–56. http://dx.doi.org/10.1063/1.362547.

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22

Liu, Hong-Xia, Xin-Yue Zhang, Zhong-Lin Bu, Wen Li, and Yan-Zhong Pei. "Thermoelectric properties of (GeTe)1-x[(Ag2Te)0.4(Sb2Te3)0.6]x alloys." Rare Metals 41, no. 3 (September 29, 2021): 921–30. http://dx.doi.org/10.1007/s12598-021-01847-5.

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23

Li, S. P., J. Q. Li, Q. B. Wang, L. Wang, F. S. Liu, and W. Q. Ao. "Synthesis and thermoelectric properties of the (GeTe)1-x(PbTe)x alloys." Solid State Sciences 13, no. 2 (February 2011): 399–403. http://dx.doi.org/10.1016/j.solidstatesciences.2010.11.045.

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24

Njegic, B., E. M. Levin, and K. Schmidt-Rohr. "125Te NMR chemical-shift trends in PbTe–GeTe and PbTe–SnTe alloys." Solid State Nuclear Magnetic Resonance 55-56 (October 2013): 79–83. http://dx.doi.org/10.1016/j.ssnmr.2013.09.003.

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25

Orlov, V. G., and G. S. Sergeev. "Peculiarities of the Electron Structure of Pseudobinary Alloys (GeTe)m–(Sb2Te3)n." Crystallography Reports 64, no. 3 (May 2019): 422–27. http://dx.doi.org/10.1134/s1063774519030209.

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26

Hazan, Eden, Naor Madar, Maya Parag, Vladimir Casian, Ohad Ben-Yehuda, and Yaniv Gelbstein. "Effective Electronic Mechanisms for Optimizing the Thermoelectric Properties of GeTe-Rich Alloys." Advanced Electronic Materials 1, no. 11 (October 26, 2015): 1500228. http://dx.doi.org/10.1002/aelm.201500228.

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Srinivasan, Bhuvanesh, Alain Gellé, Jean-François Halet, Catherine Boussard-Pledel, and Bruno Bureau. "Detrimental Effects of Doping Al and Ba on the Thermoelectric Performance of GeTe." Materials 11, no. 11 (November 11, 2018): 2237. http://dx.doi.org/10.3390/ma11112237.

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GeTe-based materials are emerging as viable alternatives to toxic PbTe-based thermoelectric materials. In order to evaluate the suitability of Al as dopant in thermoelectric GeTe, a systematic study of thermoelectric properties of Ge1−xAlxTe (x = 0–0.08) alloys processed by Spark Plasma Sintering are presented here. Being isoelectronic to Ge1−xInxTe and Ge1−xGaxTe, which were reported with improved thermoelectric performances in the past, the Ge1−xAlxTe system is particularly focused (studied both experimentally and theoretically). Our results indicate that doping of Al to GeTe causes multiple effects: (i) increase in p-type charge carrier concentration; (ii) decrease in carrier mobility; (iii) reduction in thermopower and power factor; and (iv) suppression of thermal conductivity only at room temperature and not much significant change at higher temperature. First principles calculations reveal that Al-doping increases the energy separation between the two valence bands (loss of band convergence) in GeTe. These factors contribute for Ge1−xAlxTe to exhibit a reduced thermoelectric figure of merit, unlike its In and Ga congeners. Additionally, divalent Ba-doping [Ge1−xBaxTe (x = 0–0.06)] is also studied.

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Шабалдин, А. А., А. Ю. Самунин, П. П. Константинов, С. В. Новиков, А. Т. Бурков, Zhonglin Bu, and Yanzhong Pei. "Влияние термической предыстории на свойства эффективных термоэлектрических сплавов Ge-=SUB=-0.86-=/SUB=-Pb-=SUB=-0.1-=/SUB=-Bi-=SUB=-0.04-=/SUB=-Te-=SUP=-*-=/SUP=-." Физика и техника полупроводников 56, no. 3 (2022): 261. http://dx.doi.org/10.21883/ftp.2022.03.52107.34.

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In this work, we study the properties of GeTe -based alloys, doped with bismuth, with partial substitution of lead for germanium: Ge0.86Pb0.1Bi0.04Te. The aim of the study is to explore the possibility of increasing the thermoelectric efficiency of a compound by combining optimal doping and isovalent substitution to improve the electronic properties with a simultaneous decrease of the lattice thermal conductivity. We studied alloy samples prepared in two different research laboratories using similar, but not completely identical procedures. It is shown that the electronic (thermoelectric power and electrical conductivity) properties of the samples of the two groups are in good agreement with each other. The properties of alloys depend on the thermal history of the samples due to the presence at temperatures of 600–800 K of a phase transition from a low-temperature rhombohedral to a high-temperature cubic structural modification. The thermoelectric figure of merit of alloys reaches a maximum value of 1.5 at a temperature of about 750 K.

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29

Abou El Kheir, Omar, and Marco Bernasconi. "High-Throughput Calculations on the Decomposition Reactions of Off-Stoichiometry GeSbTe Alloys for Embedded Memories." Nanomaterials 11, no. 9 (September 13, 2021): 2382. http://dx.doi.org/10.3390/nano11092382.

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Chalcogenide GeSbTe (GST) alloys are exploited as phase change materials in a variety of applications ranging from electronic non-volatile memories to neuromorphic and photonic devices. In most applications, the prototypical Ge2Sb2Te5 compound along the GeTe-Sb2Te3 pseudobinary line is used. Ge-rich GST alloys, off the pseudobinary tie-line with a crystallization temperature higher than that of Ge2Sb2Te5, are currently explored for embedded phase-change memories of interest for automotive applications. During crystallization, Ge-rich GST alloys undergo a phase separation into pure Ge and less Ge-rich alloys. The detailed mechanisms underlying this transformation are, however, largely unknown. In this work, we performed high-throughput calculations based on Density Functional Theory (DFT) to uncover the most favorable decomposition pathways of Ge-rich GST alloys. The knowledge of the DFT formation energy of all GST alloys in the central part of the Ge-Sb-Te ternary phase diagram allowed us to identify the cubic crystalline phases that are more likely to form during the crystallization of a generic GST alloy. This scheme is exemplified by drawing a decomposition map for alloys on the Ge-Ge1Sb2Te4 tie-line. A map of decomposition propensity is also constructed, which suggests a possible strategy to minimize phase separation by still keeping a high crystallization temperature.

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30

Karadashka, Ina, Vladislava Ivanova, Valeri Jordanov, and Veronika Karadjova. "Glass Formation and Properties of Multicomponent Glasses of the As2Se3-Ag2Te-GeTe System." Inorganics 12, no. 1 (December 25, 2023): 11. http://dx.doi.org/10.3390/inorganics12010011.

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Chalcogenide alloys of As2Se3-Ag2Te-GeTe were synthesized using the melt-quenching technique. By the visual and XRD analyses, the state of obtaining alloys was proven (glass, crystalline, glass + crystalline), and the glass formation region in the system was established. The thermal characteristics of some samples were determined—temperatures of glass transition (Tg); crystallization (Tcr); and melting (Tm). The basic physicochemical parameters, such as density (d) and Vickers microhardness (HV), were measured. Compactness (C), as well as some thermomechanical characteristics, such as module of elasticity (E), volume (Vh), and formation energy (Eh) of micro-voids, were calculated, and the influence of the composition on these characteristics was investigated. The addition of silver telluride resulted in a decrease in Tg and HV values and an increase in d and Vh values. No thermochemical effects of crystallization or melting were detected in some of the alloys. The obtained results were in agreement with the available literature data for similar systems.

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31

Jost, Peter, Hanno Volker, Annika Poitz, Christian Poltorak, Peter Zalden, Tobias Schäfer, Felix R. L. Lange, et al. "Disorder‐Induced Localization in Crystalline Pseudo‐Binary GeTe–Sb 2 Te 3 Alloys between Ge 3 Sb 2 Te 6 and GeTe." Advanced Functional Materials 25, no. 40 (May 21, 2015): 6399–406. http://dx.doi.org/10.1002/adfm.201500848.

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32

Roland, Guillaume, Alain Portavoce, Maxime Bertoglio, Marion Descoins, Jacopo Remondina, Didier Dutartre, Frédéric Lorut, and Magali Putero. "New insights in GeTe growth mechanisms." Journal of Alloys and Compounds 924 (November 2022): 166614. http://dx.doi.org/10.1016/j.jallcom.2022.166614.

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33

Liu, Hongxia, Xinyue Zhang, Wen Li, and Yanzhong Pei. "Advances in thermoelectric (GeTe)_x(AgSbTe₂)_{100 – x}." Chinese Physics B 31, no. 4 (March 1, 2022): 047401. http://dx.doi.org/10.1088/1674-1056/ac3cae.

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The (GeTe) x (AgSbTe2)100 – x alloys, also called TAGS-x in short, have long been demonstrated as a promising candidate for thermoelectric applications with successful services as the p-type leg in radioisotope thermoelectric generators for space missions. This largely stems from the complex band structure for a superior electronic performance and strong anharmonicity for a low lattice thermal conductivity. Utilization of the proven strategies including carrier concentration optimization, band and defects engineering, an extraordinary thermoelectric figure of merit, zT, has been achieved in TAGS-based alloys. Here, crystal structure, band structure, microstructure, synthesis techniques and thermoelectric transport properties of TAGS-based alloys, as well as successful strategies for manipulating the thermoelectric performance, are surveyed with opportunities for further advancements. These strategies involved are believed to be in principle applicable for advancing many other thermoelectrics.

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34

Huang, Yilun, Shizhen Zhi, Shengnan Zhang, Wenqing Yao, Weiqin Ao, Chaohua Zhang, Fusheng Liu, Junqin Li, and Lipeng Hu. "Regulating the Configurational Entropy to Improve the Thermoelectric Properties of (GeTe)1−x(MnZnCdTe3)x Alloys." Materials 15, no. 19 (September 30, 2022): 6798. http://dx.doi.org/10.3390/ma15196798.

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In thermoelectrics, entropy engineering as an emerging paradigm-shifting strategy can simultaneously enhance the crystal symmetry, increase the solubility limit of specific elements, and reduce the lattice thermal conductivity. However, the severe lattice distortion in high-entropy materials blocks the carrier transport and hence results in an extremely low carrier mobility. Herein, the design principle for selecting alloying species is introduced as an effective strategy to compensate for the deterioration of carrier mobility in GeTe-based alloys. It demonstrates that high configurational entropy via progressive MnZnCdTe3 and Sb co-alloying can promote the rhombohedral-cubic phase transition temperature toward room temperature, which thus contributes to the enhanced density-of-states effective mass. Combined with the reduced carrier concentration via the suppressed Ge vacancies by high-entropy effect and Sb donor doping, a large Seebeck coefficient is attained. Meanwhile, the severe lattice distortions and micron-sized Zn0.6Cd0.4Te precipitations restrain the lattice thermal conductivity approaching to the theoretical minimum value. Finally, the maximum zT of Ge0.82Sb0.08Te0.90(MnZnCdTe3)0.10 reaches 1.24 at 723 K via the trade-off between the degraded carrier mobility and the improved Seebeck coefficient, as well as the depressed lattice thermal conductivity. These results provide a reference for the implementation of entropy engineering in GeTe and other thermoelectric materials.

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35

Coombs, J. H., A. P. J. M. Jongenelis, W. van Es‐Spiekman, and B. A. J. Jacobs. "Laser‐induced crystallization phenomena in GeTe‐based alloys. I. Characterization of nucleation and growth." Journal of Applied Physics 78, no. 8 (October 15, 1995): 4906–17. http://dx.doi.org/10.1063/1.359779.

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36

Chen, Y., B. He, T. J. Zhu, and X. B. Zhao. "Thermoelectric properties of non-stoichiometric AgSbTe2based alloys with a small amount of GeTe addition." Journal of Physics D: Applied Physics 45, no. 11 (March 5, 2012): 115302. http://dx.doi.org/10.1088/0022-3727/45/11/115302.

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37

Suriñach, S., M. D. Baró, M. T. Clavaguera-Mora, and N. Clavaguera. "Glass forming ability and crystallization kinetics of alloys in the GeSe2GeTeSb2Te3 system." Journal of Non-Crystalline Solids 111, no. 1 (September 1989): 113–19. http://dx.doi.org/10.1016/0022-3093(89)90431-6.

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38

Sokolova, V. M., L. D. Dudkin, and L. I. Petrova. "Diffusion processes at GeTe/SnTe/Fe contacts." Inorganic Materials 36, no. 1 (March 2000): 16–21. http://dx.doi.org/10.1007/bf02758372.

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39

Yimam, Daniel Tadesse, A. J. T. Van Der Ree, Omar Abou El Kheir, Jamo Momand, Majid Ahmadi, George Palasantzas, Marco Bernasconi, and Bart J. Kooi. "Phase Separation in Ge-Rich GeSbTe at Different Length Scales: Melt-Quenched Bulk versus Annealed Thin Films." Nanomaterials 12, no. 10 (May 18, 2022): 1717. http://dx.doi.org/10.3390/nano12101717.

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Integration of the prototypical GeSbTe (GST) ternary alloys, especially on the GeTe-Sb2Te3 tie-line, into non-volatile memory and nanophotonic devices is a relatively mature field of study. Nevertheless, the search for the next best active material with outstanding properties is still ongoing. This search is relatively crucial for embedded memory applications where the crystallization temperature of the active material has to be higher to surpass the soldering threshold. Increasing the Ge content in the GST alloys seems promising due to the associated higher crystallization temperatures. However, homogeneous Ge-rich GST in the as-deposited condition is thermodynamically unstable, and phase separation upon annealing is unavoidable. This phase separation reduces endurance and is detrimental in fully integrating the alloys into active memory devices. This work investigated the phase separation of Ge-rich GST alloys, specifically Ge5Sb2Te3 or GST523, into multiple (meta)stable phases at different length scales in melt-quenched bulk and annealed thin film. Electron microscopy-based techniques were used in our work for chemical mapping and elemental composition analysis to show the formation of multiple phases. Our results show the formation of alloys such as GST213 and GST324 in all length scales. Furthermore, the alloy compositions and the observed phase separation pathways agree to a large extent with theoretical results from density functional theory calculations.

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40

Coombs, J. H., A. P. J. M. Jongenelis, W. van Es‐Spiekman, and B. A. J. Jacobs. "Laser‐induced crystallization phenomena in GeTe‐based alloys. II. Composition dependence of nucleation and growth." Journal of Applied Physics 78, no. 8 (October 15, 1995): 4918–28. http://dx.doi.org/10.1063/1.359780.

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41

Guttmann, Gilad Mordechai, Shmuel Samuha, Reuven Gertner, Barak Ostraich, Shlomo Haroush, and Yaniv Gelbstein. "The Thermo-Mechanical Response of GeTe under Compression." Materials 15, no. 17 (August 29, 2022): 5970. http://dx.doi.org/10.3390/ma15175970.

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Thermoelectric generators (TEGs) are devices capable of transforming heat energy into electricity and vice versa. Although TEGs are known and have been in use for around five decades, they are implemented in only a limited range of applications, mainly extraterrestrial applications. This is due to their low technical readiness level (TRL) for widespread use, which is only at levels of 3–5 approaching laboratory prototypes. One of the most setbacks in reaching higher TRL is the lack of understanding of the mechanical and thermo-mechanical properties of TE materials. Out of ~105,000 entries about TE materials only ~100 entries deal with mechanical properties, while only 3 deal with thermo-mechanical properties. GeTe-based alloys with varying other elements, forming efficient p-type thermoelectric materials in the 200 ÷ 500 °C temperature range, have been intensively researched since the 1960s and have been successfully applied in practical TEGs. Yet, their temperature-dependent mechanical properties were never reported, preventing the fulfillment of their potential in a wide variety of practical applications. The combined effects of temperature and mechanical compression of GeTe were explored in the current research by implementing novel quantitative crystallographic methods to statistically describe dislocation activity and modification of the micro-texture as inflecting by the testing conditions. It is suggested, through utilizing these methods, that the combined effect of compression and temperature leads to the dissolving of twin boundaries, which increases dislocation mobility and results in a brittle-to-ductile transition at ~0.45 of the homologous temperature.

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42

Li, J. Q., L. F. Li, S. H. Song, F. S. Liu, and W. Q. Ao. "High thermoelectric performance of GeTe–Ag8GeTe6 eutectic composites." Journal of Alloys and Compounds 565 (July 2013): 144–47. http://dx.doi.org/10.1016/j.jallcom.2013.02.149.

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43

Xu, Yongkang, Sannian Song, Zhenhui Yuan, Jin Zhao, and Zhitang Song. "High Thermal Stability and Fast Speed Phase Change Memory by Optimizing GeTe Alloys with Ru Doping." ECS Journal of Solid State Science and Technology 10, no. 5 (May 1, 2021): 055009. http://dx.doi.org/10.1149/2162-8777/abffad.

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44

Aljihmani, Lilia, Kiril Petkov, and Venceslav Vassilev. "Glass forming region in the GeSe2–GeTe–PbTe system and some physicochemical properties of glassy alloys." Journal of Non-Crystalline Solids 358, no. 2 (January 2012): 364–67. http://dx.doi.org/10.1016/j.jnoncrysol.2011.10.001.

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45

Kolobov, Alexander V., Paul Fons, Milos Krbal, and Junji Tominaga. "Amorphous phase of GeTe-based phase-change memory alloys: Polyvalency of GeTe bonding and polyamorphism." physica status solidi (a) 209, no. 6 (April 4, 2012): 1031–35. http://dx.doi.org/10.1002/pssa.201100752.

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46

Zhang, Xinyue, Zhonglin Bu, Xuemin Shi, Zhiwei Chen, Siqi Lin, Bing Shan, Maxwell Wood, et al. "Electronic quality factor for thermoelectrics." Science Advances 6, no. 46 (November 2020): eabc0726. http://dx.doi.org/10.1126/sciadv.abc0726.

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Development of thermoelectrics usually involves trial-and-error investigations, including time-consuming synthesis and measurements. Here, we identify the electronic quality factor BE for determining the maximum thermoelectric power factor, which can be conveniently estimated by a single measurement of Seebeck coefficient and electrical conductivity of only one sample, not necessarily optimized, at an arbitrary temperature. We demonstrate that thousands of experimental measurements in dozens of materials can all be described by a universal curve and a single material parameter BE for each class of materials. Furthermore, any deviation in BE with temperature or doping indicated new effects such as band convergence or additional scattering. This makes BE a powerful tool for evaluating and guiding the development of thermoelectrics. We demonstrate the power of BE to show both p-type GeTe alloys and n-type Mg3SbBi alloys as highly competitive materials, at near room temperature, to state-of-the-art Bi2Te3 alloys used in nearly all commercial applications.

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47

Gainza, Javier, Federico Serrano-Sánchez, Norbert Marcel Nemes, José Luis Martínez, María Teresa Fernández-Díaz, and José Antonio Alonso. "Features of the High-Temperature Structural Evolution of GeTe Thermoelectric Probed by Neutron and Synchrotron Powder Diffraction." Metals 10, no. 1 (December 25, 2019): 48. http://dx.doi.org/10.3390/met10010048.

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Among other chalcogenide thermoelectric materials, GeTe and derivative alloys are good candidates for intermediate temperature applications, as a replacement for toxic PbTe. We have prepared pure polycrystalline GeTe by using arc-melting, and investigated its structural evolution by using neutron powder diffraction (NPD) and synchrotron X-ray diffraction (SXRD), as well as its correlation with the thermal variation of the Seebeck coefficient. Besides a significant Ge deficiency (~7% Ge vacancies), the thermal evolution of the unit-cell volume and Ge-Te bond lengths in the rhombohedral phase (space group R3m), below 700 K, show unexpected anomalies involving the abrupt Ge-Te bond lengthening accompanied by increased Te thermal displacements. Above 700 K, the sample is cubic (space group Fm-3m) and shows considerably larger displacement parameters for Ge than for Te, as a consequence of the random distribution of the lone pair lobes of Ge2+. The Seebeck coefficient, reaching 120 μV K−1 at 775 K, shows a shoulder in the 500–570 K region that can be correlated to the structural anomaly, modifying the electron-phonon scattering in this temperature range.

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48

Huang, Ting, Xiao-min Cheng, Xia-wei Guan, and Xiang-shui Miao. "Improvement of the Half-Metallic Stability of Co₂FeAl Heusler Alloys by GeTe-Doping." IEEE Transactions on Magnetics 51, no. 11 (November 2015): 1–4. http://dx.doi.org/10.1109/tmag.2015.2440395.

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49

Yue, Luo, Wenlin Cui, Shuqi Zheng, Yue Wu, Lijun Wang, Pengpeng Bai, and Ximeng Dong. "Band Engineering and Thermoelectric Performance Optimization of p-Type GeTe-Based Alloys through Ti/Sb Co-Doping." Journal of Physical Chemistry C 124, no. 10 (February 18, 2020): 5583–90. http://dx.doi.org/10.1021/acs.jpcc.0c00045.

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50

Krbal, Milos, Jaroslav Bartak, Jakub Kolar, Anastasiia Prytuliak, Alexander V. Kolobov, Paul Fons, Lucile Bezacier, Michael Hanfland, and Junji Tominaga. "Pressure-Induced Phase Transitions in GeTe-Rich Ge–Sb–Te Alloys across the Rhombohedral-to-Cubic Transitions." Inorganic Chemistry 56, no. 14 (June 27, 2017): 7687–93. http://dx.doi.org/10.1021/acs.inorgchem.7b00163.

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