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Journal articles on the topic 'GeSbTe alloy'

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Published: 9 March 2023

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1

Tominaga, Junji. "An engineering model for high-speed switching in GeSbTe phase-change memory." Applied Physics Express 15, no. 2 (January 21, 2022): 025505. http://dx.doi.org/10.35848/1882-0786/ac4a11.

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Abstract Ge2Sb2Te5 is the most successful phase-change alloy in non-volatile memory using the amorphous-crystal phase transition. In deriving further high performance in switching, especially the transition speed from amorphous to crystal should still be modified. In this work, we examined an ideal Ge2Sb2Te5 alloy based on the Kolobov model using ab-initio molecular dynamics simulations. As a result, it was clear that a uniaxial exchange between vacancies and Ge atoms plays a crucial role in realizing high-speed switching and a large contrast in the resonance bonding state in the alloy. The vacancy engineering enables the alloy switching speed to be extremely faster.
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2

Rebora, Charles, Ruomeng Huang, Gabriela P. Kissling, Marc Bocquet, Kees De Groot, Luc Favre, David Grosso, Damien Deleruyelle, and Magali Putero. "Conductive-bridge memory cells based on a nanoporous electrodeposited GeSbTe alloy." Nanotechnology 30, no. 2 (November 1, 2018): 025202. http://dx.doi.org/10.1088/1361-6528/aae6db.

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Liang-Cai, Wu, Liu Bo, Song Zhi-Tang, Feng Gao-Ming, Feng Song-Lin, and Chen Bomy. "Total Dose Radiation Tolerance of Phase Change Memory Cell with GeSbTe Alloy." Chinese Physics Letters 23, no. 9 (September 2006): 2557–59. http://dx.doi.org/10.1088/0256-307x/23/9/057.

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4

Chabli, A., C. Vergnaud, F. Bertin, V. Gehanno, B. Valon, B. Hyot, B. Bechevet, M. Burdin, and D. Muyard. "Temperature dependence of structural and optical properties of GeSbTe alloy thin films." Journal of Magnetism and Magnetic Materials 249, no. 3 (September 2002): 509–12. http://dx.doi.org/10.1016/s0304-8853(02)00471-7.

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Wu, Liangcai, Xilin Zhou, Zhitang Song, Jie Lian, Feng Rao, Bo Liu, Sannian Song, Weili Liu, Xuyan Liu, and Songlin Feng. "197 Au irradiation study of phase-change memory cell with GeSbTe alloy." physica status solidi (a) 207, no. 10 (June 14, 2010): 2395–98. http://dx.doi.org/10.1002/pssa.201026008.

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6

Abou El Kheir, Omar, and Marco Bernasconi. "High-Throughput Calculations on the Decomposition Reactions of Off-Stoichiometry GeSbTe Alloys for Embedded Memories." Nanomaterials 11, no. 9 (September 13, 2021): 2382. http://dx.doi.org/10.3390/nano11092382.

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Chalcogenide GeSbTe (GST) alloys are exploited as phase change materials in a variety of applications ranging from electronic non-volatile memories to neuromorphic and photonic devices. In most applications, the prototypical Ge2Sb2Te5 compound along the GeTe-Sb2Te3 pseudobinary line is used. Ge-rich GST alloys, off the pseudobinary tie-line with a crystallization temperature higher than that of Ge2Sb2Te5, are currently explored for embedded phase-change memories of interest for automotive applications. During crystallization, Ge-rich GST alloys undergo a phase separation into pure Ge and less Ge-rich alloys. The detailed mechanisms underlying this transformation are, however, largely unknown. In this work, we performed high-throughput calculations based on Density Functional Theory (DFT) to uncover the most favorable decomposition pathways of Ge-rich GST alloys. The knowledge of the DFT formation energy of all GST alloys in the central part of the Ge-Sb-Te ternary phase diagram allowed us to identify the cubic crystalline phases that are more likely to form during the crystallization of a generic GST alloy. This scheme is exemplified by drawing a decomposition map for alloys on the Ge-Ge1Sb2Te4 tie-line. A map of decomposition propensity is also constructed, which suggests a possible strategy to minimize phase separation by still keeping a high crystallization temperature.
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Yimam, Daniel Tadesse, A. J. T. Van Der Ree, Omar Abou El Kheir, Jamo Momand, Majid Ahmadi, George Palasantzas, Marco Bernasconi, and Bart J. Kooi. "Phase Separation in Ge-Rich GeSbTe at Different Length Scales: Melt-Quenched Bulk versus Annealed Thin Films." Nanomaterials 12, no. 10 (May 18, 2022): 1717. http://dx.doi.org/10.3390/nano12101717.

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Integration of the prototypical GeSbTe (GST) ternary alloys, especially on the GeTe-Sb2Te3 tie-line, into non-volatile memory and nanophotonic devices is a relatively mature field of study. Nevertheless, the search for the next best active material with outstanding properties is still ongoing. This search is relatively crucial for embedded memory applications where the crystallization temperature of the active material has to be higher to surpass the soldering threshold. Increasing the Ge content in the GST alloys seems promising due to the associated higher crystallization temperatures. However, homogeneous Ge-rich GST in the as-deposited condition is thermodynamically unstable, and phase separation upon annealing is unavoidable. This phase separation reduces endurance and is detrimental in fully integrating the alloys into active memory devices. This work investigated the phase separation of Ge-rich GST alloys, specifically Ge5Sb2Te3 or GST523, into multiple (meta)stable phases at different length scales in melt-quenched bulk and annealed thin film. Electron microscopy-based techniques were used in our work for chemical mapping and elemental composition analysis to show the formation of multiple phases. Our results show the formation of alloys such as GST213 and GST324 in all length scales. Furthermore, the alloy compositions and the observed phase separation pathways agree to a large extent with theoretical results from density functional theory calculations.
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8

Kim, Sang Y., Sang J. Kim, Hun Seo, and Myong R. Kim. "Complex Refractive Indices of GeSbTe-Alloy Thin Films: Effect of Nitrogen Doping and Wavelength Dependence." Japanese Journal of Applied Physics 38, Part 1, No. 3B (March 30, 1999): 1713–14. http://dx.doi.org/10.1143/jjap.38.1713.

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9

Nozaki, Hiroo, Yuji Ikeda, Kazuhide Ichikawa, and Akitomo Tachibana. "Electronic stress tensor analysis of molecules in gas phase of CVD process for gesbte alloy." Journal of Computational Chemistry 36, no. 16 (April 23, 2015): 1240–51. http://dx.doi.org/10.1002/jcc.23920.

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10

Wu, Liangcai, Tao Li, Wanliang Liu, and Zhitang Song. "High-speed and large-window C-doped Sb-rich GeSbTe alloy for phase-change memory applications." Applied Physics Express 12, no. 12 (November 20, 2019): 125006. http://dx.doi.org/10.7567/1882-0786/ab5312.

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11

Wang, Siyu, Tong Xing, Ping Hu, Tian-Ran Wei, Xudong Bai, Pengfei Qiu, Xun Shi, and Lidong Chen. "Optimized carrier concentration and enhanced thermoelectric properties in GeSb4-xBixTe7 materials." Applied Physics Letters 121, no. 21 (November 21, 2022): 213902. http://dx.doi.org/10.1063/5.0123298.

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As the pseudo-binary alloys between GeTe and Sb2Te3, GeSbTe-based compounds are promising thermoelectric materials. Although Ge2Sb2Te5 and GeSb2Te4 have widely been studied, the thermoelectric properties of GeSb4Te7 have not been well understood yet. In this work, we design a series of GeSb4- xBi xTe7 solid solutions and systematically study the variation in the crystal structure, electrical, and thermal transport properties. Alloying Bi effectively reduces the carrier concentration and, thus, enhances the Seebeck coefficient. Meanwhile, the thermal conductivity is greatly reduced via large mass fluctuations. A maximum zT of 0.69 at 550 K and an average zT value of 0.52 between 300 and 700 K have been achieved for GeSb1.5Bi2.5Te7. These findings will promote the understanding and development of GeSbTe-based thermoelectric materials.
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12

Goffart, Ludovic, Christophe Vallée, Gabriele Navarro, Jean-Philippe Reynard, Bernard Pelissier, and Gauthier Lefèvre. "Oxidation Process in Ge-Rich GeSbTe Alloy for Phase-Change Memory: Mechanism, Kinetic and N-Doping Influence." ECS Meeting Abstracts MA2020-02, no. 14 (November 23, 2020): 1358. http://dx.doi.org/10.1149/ma2020-02141358mtgabs.

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13

Chèze, Caroline, Flavia Righi Riva, Giulia Di Bella, Ernesto Placidi, Simone Prili, Marco Bertelli, Adriano Diaz Fattorini, et al. "Interface Formation during the Growth of Phase Change Material Heterostructures Based on Ge-Rich Ge-Sb-Te Alloys." Nanomaterials 12, no. 6 (March 18, 2022): 1007. http://dx.doi.org/10.3390/nano12061007.

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In this study, we present a full characterization of the electronic properties of phase change material (PCM) double-layered heterostructures deposited on silicon substrates. Thin films of amorphous Ge-rich Ge-Sb-Te (GGST) alloys were grown by physical vapor deposition on Sb2Te3 and on Ge2Sb2Te5 layers. The two heterostructures were characterized in situ by X-ray and ultraviolet photoemission spectroscopies (XPS and UPS) during the formation of the interface between the first and the second layer (top GGST film). The evolution of the composition across the heterostructure interface and information on interdiffusion were obtained. We found that, for both cases, the final composition of the GGST layer was close to Ge2SbTe2 (GST212), which is a thermodynamically favorable off-stoichiometry GeSbTe alloy in the Sb-GeTe pseudobinary of the ternary phase diagram. Density functional theory calculations allowed us to calculate the density of states for the valence band of the amorphous phase of GST212, which was in good agreement with the experimental valence bands measured in situ by UPS. The same heterostructures were characterized by X-ray diffraction as a function of the annealing temperature. Differences in the crystallization process are discussed on the basis of the photoemission results.
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14

Newby, RE, S. Muhamed, S. Smith, JE Alty, S. Jamieson, and PA Kempster. "P68 Activation of the geste antagoniste improves speed of finger tapping in organic and functional dystonia." Journal of Neurology, Neurosurgery & Psychiatry 90, no. 3 (February 14, 2019): e40.3-e40. http://dx.doi.org/10.1136/jnnp-2019-abn.130.

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ObjectivesThe geste antagoniste is a typical feature of dystonia’s motor phenomenology. Gestes may also occur in functional dystonia. We investigated how gestes affect the kinematics of voluntary movement.DesignCross-sectional study.SubjectsTwenty-three patients with organic dystonia and three with functional dystonia were studied.MethodsFinger tapping was assessed while subjects wore electromagnetic sensors secured to index finger and thumb. Subjects were instructed to tap ‘as fast and as big as possible’ for 15 s, first with and then without activation of their geste. Precise position and orientation data, in six degrees of freedom, were recorded. Separable motor components were derived from a comparison of the x, y and z coordinates of each sensor. The product of amplitude and frequency, giving the sensor excursion per unit time, was used as a measure of average speed. A repeated measures ANOVA was conducted, with the factors CONDITION (with vs without geste), HAND (dominant vs non-dominant) and GROUP (organic vs functional).ResultsFor average speed, there was a significant effect of CONDITION—patients with both organic and functional dystonia performed better with geste (F1,24=13.5; p=0.001). There was no main effect of HAND or GROUP.ConclusionsGeste antagonistes enhance motor performance in organic and functional dystonia. These selective voluntary movements may have a general effect on the execution of motor plans in dystonia. Sample numbers were too small to allow meaningful analysis of GROUP effects.
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15

Cecchi, Stefano, Iñaki Lopez Garcia, Antonio M. Mio, Eugenio Zallo, Omar Abou El Kheir, Raffaella Calarco, Marco Bernasconi, Giuseppe Nicotra, and Stefania M. S. Privitera. "Crystallization and Electrical Properties of Ge-Rich GeSbTe Alloys." Nanomaterials 12, no. 4 (February 14, 2022): 631. http://dx.doi.org/10.3390/nano12040631.

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Enrichment of GeSbTe alloys with germanium has been proposed as a valid approach to increase the crystallization temperature and therefore to address high-temperature applications of non-volatile phase change memories, such as embedded or automotive applications. However, the tendency of Ge-rich GeSbTe alloys to decompose with the segregation of pure Ge still calls for investigations on the basic mechanisms leading to element diffusion and compositional variations. With the purpose of identifying some possible routes to limit the Ge segregation, in this study, we investigate Ge-rich Sb2Te3 and Ge-rich Ge2Sb2Te5 with low (<40 at %) or high (>40 at %) amounts of Ge. The formation of the crystalline phases has been followed as a function of annealing temperature by X-ray diffraction. The temperature dependence of electrical properties has been evaluated by in situ resistance measurements upon annealing up to 300 °C. The segregation and decomposition processes have been studied by scanning transmission electron microscopy (STEM) and discussed on the basis of density functional theory calculations. Among the studied compositions, Ge-rich Ge2Sb2Te5 is found to be less prone to decompose with Ge segregation.
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16

Talochkin, A. B., K. A. Kokh, and O. E. Tereshchenko. "Optical phonons of GeSbTe alloys: Influence of structural disorder." Journal of Alloys and Compounds 942 (May 2023): 169122. http://dx.doi.org/10.1016/j.jallcom.2023.169122.

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17

Prazakova, L., E. Nolot, E. Martinez, D. Rouchon, N. Rochat, C. Sabbione, J. Li, et al. "Spectroscopic study of nitrogen incorporation in Ge, Sb, and Te elemental systems: A step toward the understanding of nitrogen effect in phase-change materials." Journal of Applied Physics 132, no. 20 (November 28, 2022): 205102. http://dx.doi.org/10.1063/5.0117596.

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Nitrogen doping in chalcogenide materials represents a promising way for the improvement of material properties. Indeed, N doping in GeSbTe phase-change alloys have demonstrated to greatly enhance thermal stability of their amorphous phase, necessary to ensure the data retention of the final phase-change memory device. Although it is suggested that the N doping in such alloys leads to the preferential formation of Ge-N bonds, further questions concerning the bonding, in particular, Sb-N and Te-N, and the structural arrangement remain unclear. In this paper, we present a study of as-deposited elemental Ge, Sb, and Te systems and their nitrides (i.e., GeN, SbN, and TeN alloys), using a large range of N content from 0 up to about 50 at. %. The as-deposited alloys are investigated by Fourier transform infrared and Raman spectroscopy. We identify the active vibrational modes associated with the formation of Ge-N, Sb-N, and Te-N bonds, highlighting the impact of N incorporation on the structure of these elemental systems. We further qualitatively compare the GeN, SbN, and TeN experimental spectra with the “ ab initio” simulations of the related ideal nitride structures. Finally, the analysis of elemental nitride layers is extended to N-doped GeSbTe alloys, providing deeper understanding of nitrogen bonding in such ternary systems, employed in memory technology.
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18

Bourgine, Adrien, Jérémie Grisolia, Maxime Vallet, Daniel Benoit, Y. Le Friec, V. Caubet-Hilloutou, and Alain Claverie. "On the charge transport mechanisms in Ge-rich GeSbTe alloys." Solid-State Electronics 172 (October 2020): 107871. http://dx.doi.org/10.1016/j.sse.2020.107871.

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19

Morales-Sánchez, E., E. F. Prokhorov, J. González-Hernández, and A. Mendoza-Galván. "Structural, electric and kinetic parameters of ternary alloys of GeSbTe." Thin Solid Films 471, no. 1-2 (January 2005): 243–47. http://dx.doi.org/10.1016/j.tsf.2004.06.141.

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20

Gabardi, S., S. Caravati, M. Bernasconi, and M. Parrinello. "Density functional simulations of Sb-rich GeSbTe phase change alloys." Journal of Physics: Condensed Matter 24, no. 38 (September 4, 2012): 385803. http://dx.doi.org/10.1088/0953-8984/24/38/385803.

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21

Robertson, John. "Silicon versus the rest." Canadian Journal of Physics 92, no. 7/8 (July 2014): 553–60. http://dx.doi.org/10.1139/cjp-2013-0543.

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We review the material properties that allowed amorphous silicon to become the dominant large area semiconductor and then point out how amorphous oxide semiconductors could displace a-Si in thin film transistors, and how phase change materials, such as GeSbTe alloys, have provided an optical storage technology and will provide a nonvolatile electrical storage technology based on their unique properties.
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Tominaga, Junji, and Leonid Bolotov. "Re-amorphization of GeSbTe alloys not through a melt-quenching process." Applied Physics Express 12, no. 1 (November 26, 2018): 015504. http://dx.doi.org/10.7567/1882-0786/aaed9d.

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23

Agati, Marta, Maxime Vallet, Sébastien Joulié, Daniel Benoit, and Alain Claverie. "Chemical phase segregation during the crystallization of Ge-rich GeSbTe alloys." Journal of Materials Chemistry C 7, no. 28 (2019): 8720–29. http://dx.doi.org/10.1039/c9tc02302j.

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Jeynes, C., E. Nolot, C. Costa, C. Sabbione, W. Pessoa, F. Pierre, A. Roule, G. Navarro, and M. Mantler. "Quantifying nitrogen in GeSbTe:N alloys." Journal of Analytical Atomic Spectrometry 35, no. 4 (2020): 701–12. http://dx.doi.org/10.1039/c9ja00382g.

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Prazakova, L., E. Nolot, E. Martinez, F. Fillot, D. Rouchon, N. Rochat, M. Bernard, et al. "Temperature driven structural evolution of Ge-rich GeSbTe alloys and role of N-doping." Journal of Applied Physics 128, no. 21 (December 7, 2020): 215102. http://dx.doi.org/10.1063/5.0027734.

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26

Bragaglia, Valeria, Fabrizio Arciprete, Antonio M. Mio, and Raffaella Calarco. "Designing epitaxial GeSbTe alloys by tuning the phase, the composition, and the vacancy ordering." Journal of Applied Physics 123, no. 21 (June 7, 2018): 215304. http://dx.doi.org/10.1063/1.5024047.

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27

D’Arrigo, G., A. M. Mio, M. Boniardi, A. Redaelli, E. Varesi, S. Privitera, G. Pellegrino, C. Spinella, and E. Rimini. "Crystallization properties of Sb-rich GeSbTe alloys by in-situ morphological and electrical analysis." Materials Science in Semiconductor Processing 65 (July 2017): 100–107. http://dx.doi.org/10.1016/j.mssp.2016.07.014.

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Kaur, Jashangeet, Ankush Parmar, S. K. Tripathi, and Navdeep Goyal. "Optical Study of Ge1Sb2Te4 and GeSbTe thin films." Materials Research Express 6, no. 4 (January 23, 2019): 046417. http://dx.doi.org/10.1088/2053-1591/aafc03.

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Luckas, J., A. Piarristeguy, G. Bruns, P. Jost, S. Grothe, R. M. Schmidt, C. Longeaud, and M. Wuttig. "Stoichiometry dependence of resistance drift phenomena in amorphous GeSnTe phase-change alloys." Journal of Applied Physics 113, no. 2 (January 14, 2013): 023704. http://dx.doi.org/10.1063/1.4769871.

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Prazakova, L., E. Nolot, E. Martinez, D. Rouchon, F. Fillot, N. Bernier, R. Elizalde, M. Bernard, and G. Navarro. "The effect of Ge content on structural evolution of Ge-rich GeSbTe alloys at increasing temperature." Materialia 21 (March 2022): 101345. http://dx.doi.org/10.1016/j.mtla.2022.101345.

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Blachowicz, T., M. G. Beghi, G. Güntherodt, B. Beschoten, H. Dieker, and M. Wuttig. "Crystalline phases in the GeSb2Te4 alloy system: Phase transitions and elastic properties." Journal of Applied Physics 102, no. 9 (November 2007): 093519. http://dx.doi.org/10.1063/1.2809355.

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Luong, Minh Anh, Marta Agati, Nicolas Ratel Ramond, Jérémie Grisolia, Yannick Le Friec, Daniel Benoit, and Alain Claverie. "On Some Unique Specificities of Ge‐Rich GeSbTe Phase‐Change Material Alloys for Nonvolatile Embedded‐Memory Applications." physica status solidi (RRL) – Rapid Research Letters 15, no. 3 (March 2021): 2170015. http://dx.doi.org/10.1002/pssr.202170015.

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Goffart, Ludovic, Bernard Pelissier, Gauthier Lefèvre, Yannick Le–Friec, Christophe Vallée, Gabriele Navarro, and Jean–Philippe Reynard. "Surface oxidation phenomena in Ge-rich GeSbTe alloys and N doping influence for Phase-Change Memory applications." Applied Surface Science 573 (January 2022): 151514. http://dx.doi.org/10.1016/j.apsusc.2021.151514.

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Kumar, Sanjay, and Vineet Sharma. "Structural transition on doping rare earth Sm to GeSbTe phase change material." Journal of Alloys and Compounds 877 (October 2021): 160246. http://dx.doi.org/10.1016/j.jallcom.2021.160246.

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Zhou, J., Z. Sun, Y. Pan, Z. Song, and R. Ahuja. "Vacancy or not: An insight on the intrinsic vacancies in rocksalt-structured GeSbTe alloys from ab initio calculations." EPL (Europhysics Letters) 95, no. 2 (June 27, 2011): 27002. http://dx.doi.org/10.1209/0295-5075/95/27002.

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FU, Yong-zhong. "Influence of sputtering parameters on microstructure and mechanical properties of GeSbTe films." Transactions of Nonferrous Metals Society of China 18, no. 1 (February 2008): 167–70. http://dx.doi.org/10.1016/s1003-6326(08)60030-8.

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ILUNGA, Anselmo. "Un dispositif pour les enseignants de FLE des universités angolaises." FRANCISOLA 3, no. 2 (March 2, 2019): 162. http://dx.doi.org/10.17509/francisola.v3i2.15749.

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RÉSUMÉ. La présente contribution, converge vers la didactique comparée et porte sur la description des dimensions génériques et spécifiques, sur le savoir et les pratiques (Mercier, 2000, Schubauer-Léoni & Sensevy, 2000) à partir des vidéographies qui nous permettront de décrire les activités de classe en nous intéressant à la fois sur la circulation des savoirs et surtout l’analyse des gestes professionnels des quatre professeurs du FLE de deux institutions universitaires (Groupe A et groupe B). Le résultat a démontré que les professeurs du groupe A semblent avoir de difficulté par rapport à leur congénère de B qui ont reçu la formation du FLE. Cette analyse didactique nous permettra de trouver des réponses aux difficultés dans l’activité enseignante et permettre aux apprenants d’être des acteurs de leurs propres apprentissages. Mots-clés : approche comparative, FLE, action conjointe, gestes professionnels ABSTRACT. This contribution, which converges on comparative didactics, focuses on the description of generic and specific dimensions, knowledge and practices (Mercier, Schubauer-Léoni & Sensevy, 2000) from the videographies that will allow us to describe the classroom activities by focusing on both the flow of knowledge and, above all, the analysis of the professional gestures of the four FLE professors of two university institutions (Group A and Group B). The result showed that Group A teachers appear to have difficulty with their B congener who received the FLE training. This didactic analysis will allow us to find answers to the difficulties in the teaching activity and allow the learners to be actors of their own learning. Keywords: comparative approach, FLE, joint action, professional gestures
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Cil, K., Y. Zhu, J. Li, C. H. Lam, and H. Silva. "Assisted cubic to hexagonal phase transition in GeSbTe thin films on silicon nitride." Thin Solid Films 536 (June 2013): 216–19. http://dx.doi.org/10.1016/j.tsf.2013.03.087.

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Marcenaro, Simone. "«Filologia e cultura epica: il caso dei trobadores»." Revista de Literatura Medieval 30 (December 31, 2018): 13–28. http://dx.doi.org/10.37536/rpm.2018.30.0.74043.

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Resumen: Alcune cantigas de escarnio e maldizer del trovatore galego-portoghese Fernan Soarez de Quinhones alludono, in forma parodica e burlesca, alla letteratura epica, sia attraverso l’uso di forme e stilemi propri del genere, sia attraverso una rete di rimandi intertestuali. L’analisi e lo studio dei possibili intertesti utilizzati dal trovatore per le sue canzoni satiriche possono dirci qualcosa di più in merito alla cultura letteraria del circolo di autori che si riunirono alla corte del futuro Alfonso X, ancora infante, nel quarto decennio del xiii secolo; allo stesso tempo, sarà possibile fornire dati utili sull’influsso dell’epica antico-francese nell’Iberia medievale.Parole-chiave: Trovatori galego-portoghesi, cantigas de escarnio e maldizer, Chanson de geste, Alfonso X di Castiglia.Abstract: Some cantigas de escarnio e maldizer by the Galician-Portu- guese Troubadour Fernan Soarez de Quinhones hint at epic Literature in a parodic and satirical manner, through the use of forms and style of the epic genre but also thanks to a deep network of intertextual relationships. The study and analysis of the possible sources used by the author in his satirical poems can tell us something more about the literary culture of the Trouba- dours gathered at the court of the infante Alfonso, in the fourth decade of the 13th century; at the same time, it will be possible to provide useful data on the influence of Old French epic poetry in medieval Iberia.Keywords: Galician-Portuguese Troubadours, cantigas de escarnio e maldizer, Chanson de geste, Alfonso X of Castile.
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Nedelcu, Nicoleta, Veturia Chiroiu, Ligia Munteanu, and Iulian Girip. "On the optical nonlinearity in the GeSbSe chalcogenide glasses." Materials Research Express 7, no. 6 (June 12, 2020): 066403. http://dx.doi.org/10.1088/2053-1591/ab97e3.

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Kumar, Sanjay, and Vineet Sharma. "Improvement in thermal stability and crystallization mechanism of Sm doped GeSbTe thin films for phase change memory applications." Journal of Alloys and Compounds 893 (February 2022): 162316. http://dx.doi.org/10.1016/j.jallcom.2021.162316.

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42

Rachwalska von Rejchwald, Jolanta. "Un geste fantôme du président. Reconfigurations dans les rapports entre l’État laïc et la religion dans l’ère post-séculière." Romanica Wratislaviensia 66 (October 4, 2019): 133–46. http://dx.doi.org/10.19195/0557-2665.66.11.

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THE PRESIDENT’S PHANTOM GESTURE: RECONFIGURATIONS BETWEEN A SECULAR STATE AND RELIGION IN TIMES OF POST-SECULARISM The personal attitude of the successive presidents of the Fifth Republic of France to religion, although different, did not violate the general principle of the secularity of the state. Meanwhile, the ambiguity of some gestures of president Emmanuel Macron, visible during the funeral ceremony of Johnny Hallyday, sparked protests among the laicity defenders, especially since it fell exactly on the anniversary of the 1905 law on the separation of Churches from the State. Is it possible to see in the president’s behaviour signs of striving to push the limits of secularity that seemed so far unshakeable? An analysis of Macron’s speeches, forming a kind of political theology, will allow us to feature the outlines of the new post-secular laicity that is emerging during his presidency.
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43

Peng, H. K., K. Cil, A. Gokirmak, G. Bakan, Y. Zhu, C. S. Lai, C. H. Lam, and H. Silva. "Thickness dependence of the amorphous-cubic and cubic-hexagonal phase transition temperatures of GeSbTe thin films on silicon nitride." Thin Solid Films 520, no. 7 (January 2012): 2976–78. http://dx.doi.org/10.1016/j.tsf.2011.11.033.

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44

Abd El-Wahabb, E., M. M. Abd El-Aziz, E. R. Sharf, and M. A. Afifi. "Devitrification behavior and some electrical properties of GeSeTl chalcogenide glass." Journal of Alloys and Compounds 509, no. 5 (February 2011): 1749–55. http://dx.doi.org/10.1016/j.jallcom.2010.10.033.

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45

Wang, Guanjie, Jian Zhou, Stephen R. Elliott, and Zhimei Sun. "Role of carbon-rings in polycrystalline GeSb2Te4 phase-change material." Journal of Alloys and Compounds 782 (April 2019): 852–58. http://dx.doi.org/10.1016/j.jallcom.2018.12.228.

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46

Ruczkowski, Piotr. "Administracyjnoprawny tryb zmiany nazwiska w Niemczech (Öffentlich-rechtliche Namensänderung in Deutschland) – wybrane zagadnienia proceduralne i materialnoprawne." Opolskie Studia Administracyjno-Prawne 16, no. 1 (4) (September 16, 2019): 47–59. http://dx.doi.org/10.25167/osap.1159.

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The article analyzes selected legal provisions related to administrative and legal procedures of changing the surname in Germany. It is worth emphasizing that the same provisions apply to changing first names. The issue of adopting new surnames and first names and their changes in Germany is regulated first of all by civil law provisions and, to be more precise, by family law provisions which are closely related to the existing family relationships and blood relationships. Legislators have also provided for a possibility of changing surnames and names through administrative and legal procedures based on the public law regulations, in particular – the Change of Name and Surname Act (Gesetz über die Änderung von Familiennamen und Vornamen). Adopting the principle of relative stability of names and surnames, German legislators allow for a change of names and surnames solely upon the request of the party concerned and for valid reasons only, e.g. when the surname is embarrassing, has a complicated spelling or difficult pronunciation. In Germany, German citizens or stateless persons residing or staying on German territory may file a petition to have their name and surname changed. Moreover, administrative provisions allow refugees and persons eligible for asylum to file a change of the surname petition.
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Petkov, P., C. Vodenicharov, and S. Parvanov. "Electrode-limited currents in Al-(GeSeTl)-Al thin films." Thin Solid Films 259, no. 2 (April 1995): 270–74. http://dx.doi.org/10.1016/0040-6090(94)06407-5.

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48

Cissewski, Julia, and Christophe Boesch. "Communication without language." Gesture 15, no. 2 (July 8, 2016): 224–49. http://dx.doi.org/10.1075/gest.15.2.04cis.

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Great apes do not possess language or any comparable system of symbolic communication. Yet they communicate intentionally and possess cognitive competencies like categorization and decontextualization. These provide the basis for mental concepts and the meaning side of linguistic symbols. The arbitrarily linked and conventionalized forms for expressing these meanings, however, seem to be largely missing. We propose two strategies that may allow great apes to communicate a wide array of meanings without creating numerous arbitrarily linked forms. First, we suggest the existence of ‘population-specific semantic shifts’: within a population a communicative signal’s meaning is modified without changing its form, resulting in a new ‘vocabulary item’. Second, we propose that great apes, in addition to possessing sophisticated inferential abilities, intentionally display behaviors without overt communicative intent to provide eavesdropping conspecifics with ‘natural meaning’ (in the Gricean sense) and thus to influence their behavior.
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Pika, Simone, Katja Liebal, Josep Call, and Michael Tomasello. "Gestural communication of apes." Gestural Communication in Nonhuman and Human Primates 5, no. 1-2 (December 16, 2005): 41–56. http://dx.doi.org/10.1075/gest.5.1.05pik.

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Gestural communication of nonhuman primates may allow insight into the evolutionary scenario of human communication given the flexible use and learning of gestures as opposed to vocalizations. This paper provides an overview of the work on the gestural communication of apes with the focus on their repertoire, learning mechanisms, and the flexibility of gesture use during interactions with conspecifics. Although there is a variation between the species in the types and numbers of gestures performed, the influence of ecology, social structure and cognitive skills on their gestural repertoires is relatively restricted. As opposed to humans, apes do not use their gestures referentially nor do their gestures show the symbolic or conventionalized features of human gestural communication. However, since the gestural repertoires of apes are characterized by a high degree of individual variability and flexibility of use as opposed to their vocalizations it seems plausible that the gestures were the modality within which symbolic communication first evolved.
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Lempert, Michael. "Uncommon resemblance." Gesture 16, no. 1 (June 15, 2017): 35–67. http://dx.doi.org/10.1075/gest.16.1.02lem.

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Abstract Research on manual gesture has been preoccupied with unconventionalized and conventionalized extremes. Homesigns developed spontaneously by deaf children unexposed to standardized sign languages have been used as a window onto more general socio-cognitive processes of semiotic systemization. Spontaneous, idiosyncratic gesticulation has been contrasted with shared, highly regimented “emblematic” or “quotable” gestures to reveal a cline of conventionalization. I direct attention here to the vast and relatively understudied middle ground in which manual gesture shows evidence of only partial conventionalization. Using a corpus of televised political debate data from a US presidential campaign cycle, I note, first, that there is nothing as coherent and systematized as a “register” of political gesture here. Focusing on gesture variation in precision-grip and index-finger-extended gestures of Barack Obama and Hillary Clinton, I identify form-functional “pragmatic affinities” among gestures that have not crystallized into stable types or classes. Dwelling on the specificities of gesture variation, with its mercurial forms and incomplete conventionalization, may allow us to appreciate the processual complexities of gestural enregisterment in social and historical life.
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