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Journal articles on the topic 'Germanium diffusion'

Author: Grafiati

Published: 4 June 2021

Last updated: 20 February 2023

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1

Yang, Jun, Yunxia Ping, Wei Liu, Wenjie Yu, Zhongying Xue, Xing Wei, Aimin Wu, and Bo Zhang. "Ti Interlayer Mediated Uniform NiGe Formation under Low-Temperature Microwave Annealing." Metals 11, no. 3 (March 15, 2021): 488. http://dx.doi.org/10.3390/met11030488.

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The reactions between nickel and germanium are investigated by the incorporation of a titanium interlayer on germanium (100) substrate. Under microwave annealing (MWA), the nickel germanide layers are formed from 150 °C to 350 °C for 360 s in ambient nitrogen atmosphere. It is found that the best quality nickel germanide is achieved by microwave annealing at 350 °C. The titanium interlayer becomes a titanium cap layer after annealing. Increasing the diffusion of Ni by MWA and decreasing the diffusion of Ni by Ti are ascribed to induce the uniform formation of nickel germanide layer at low MWA temperature.

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2

Chroneos, A., and R. V. Vovk. "Palladium diffusion in germanium." Journal of Materials Science: Materials in Electronics 26, no. 6 (March 7, 2015): 3787–89. http://dx.doi.org/10.1007/s10854-015-2903-9.

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3

Iwasaki, T. "Molecular-dynamics study of interfacial diffusion between high-permittivity gate dielectrics and germanium substrates." Journal of Materials Research 20, no. 5 (May 2005): 1300–1307. http://dx.doi.org/10.1557/jmr.2005.0158.

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The stability of interfaces with germanium, which has recently been discussed as a replacement for silicon in ultra-large-scale integrated circuits (ULSIs), was studied. Interfacial oxygen diffusion from high-permittivity gate dielectrics (ZrO2 and HfO2) into germanium substrates must be suppressed to prevent the formation of interfacial layers between the gate dielectrics and the germanium substrates. Oxygen diffusion was simulated through a molecular-dynamics technique that takes into account many-body interactions and charge transfer between different elements. The simulation results show that the addition of yttrium is effective in suppressing interfacial oxygen diffusion at the ZrO2/germanium interfaces. On the other hand, the addition of yttrium is not effective in suppressing interfacial oxygen diffusion at the HfO2/germanium interfaces. The results also show that the diffusion at the ZrO2/Ge(111) and HfO2/Ge(111) interfaces is much more suppressed than the diffusion at the ZrO2/Ge(001) and HfO2/Ge(001) interfaces.

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4

Strohm, A., S. Matics, and W. Frank. "Diffusion of Gold in Germanium." Defect and Diffusion Forum 194-199 (April 2001): 629–34. http://dx.doi.org/10.4028/www.scientific.net/ddf.194-199.629.

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5

Portavoce, A., O. Abbes, Y. Rudzevich, L. Chow, V. Le Thanh, and C. Girardeaux. "Manganese diffusion in monocrystalline germanium." Scripta Materialia 67, no. 3 (August 2012): 269–72. http://dx.doi.org/10.1016/j.scriptamat.2012.04.038.

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6

Doyle, J. P., A. Yu Kuznetsov, and B. G. Svensson. "Copper diffusion in amorphous germanium." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 16, no. 4 (July 1998): 2604–7. http://dx.doi.org/10.1116/1.581389.

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7

Tahini, H. A., A. Chroneos, S. C. Middleburgh, U. Schwingenschlögl, and R. W. Grimes. "Ultrafast palladium diffusion in germanium." Journal of Materials Chemistry A 3, no. 7 (2015): 3832–38. http://dx.doi.org/10.1039/c4ta06210h.

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8

Kobeleva, Svetlana P., Ilya M. Anfimov, Andrei V. Turutin, Sergey Yu Yurchuk, and Vladimir M. Fomin. "Coordinate dependent diffusion analysis of phosphorus diffusion profiles in gallium doped germanium." Modern Electronic Materials 4, no. 3 (September 1, 2018): 113–17. http://dx.doi.org/10.3897/j.moem.4.3.39536.

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We have analyzed phosphorus diffusion profiles in an In0.01Ga0.99As/In0.56Ga0.44P/Ge germanium structure during phosphorus co-diffusion with gallium for synthesis of the germanium subcell in multi-junction solar cells.. Phosphorus diffused from the In0.56Ga0.44P layer simultaneously with gallium diffusion into the heavily gallium doped germanium substrate thus determining the specific diffusion conditions. Most importantly, gallium and phosphorus co-diffusion produces two p–n junctions instead of one. The phosphorus diffusion profiles do not obey Fick’s laws. The phosphorus diffusion coefficient DP depth distribution in the specimen has been studied using two methods, i.e., the Sauer–Freise modification of the Boltzmann–Matano method and the coordinate dependent diffusion method. We show that allowance for the drift component in the coordinate dependent diffusion method provides a better DP agreement with literary data. Both methods suggest the DP tendency to grow at the heterostructure boundary and to decline closer to the main p–n junction. The DP growth near the surface p–n junction the field of which is directed toward the heterostructure boundary and its decline near the main p–n junction with an oppositely directed field, as well as the observed DP growth with the electron concentration, suggest that the negatively charged VGeP complexes diffuse in the heterostructure by analogy with one-component diffusion.

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9

Eguchi, S., C. N. Chleirigh, O. O. Olubuyide, and J. L. Hoyt. "Germanium-concentration dependence of arsenic diffusion in silicon germanium alloys." Applied Physics Letters 84, no. 3 (January 19, 2004): 368–70. http://dx.doi.org/10.1063/1.1641169.

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10

Khadir, Abdelkader, Nouredine Sengouga, and Mohamed Kamel Abdelhafidi. "Germanium Gradient Optimization for High-Speed Silicon Germanium Hetero-Junction Bipolar Transistors." Annals of West University of Timisoara - Physics 61, no. 1 (December 1, 2019): 22–32. http://dx.doi.org/10.2478/awutp-2019-0002.

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AbstractThe effect of germanium trapezoidal profile shape on the direct current (DC) current gain (βF), cut-off frequency (fT) and maximum oscillation frequency (fMAX) of silicon-germanium (SiGe) hetero-junction bipolar transistors (HBTs) has been investigated. The energy balance (EB), hydrodynamic (HD) and drift-diffusion (DD) physical transport models in SILVACO technology computer aided design (T-CAD) simulator were used. It was found that the current gain values using energy balance model are higher than hydrodynamic and much higher than those corresponding to drift-diffusion. Moreover, decreasing the germanium gradient slope towards the collector side of the base enhances the maximum oscillation frequencies using HD and EB models whilst, they remain stable for DD model.

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11

Gusakov, Vasilii E. "General Model of Diffusion of Interstitial Oxygen in Silicon, Germanium and Silicon - Germanium Crystals." Solid State Phenomena 108-109 (December 2005): 413–18. http://dx.doi.org/10.4028/www.scientific.net/ssp.108-109.413.

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A theoretical modelling of the oxygen diffusivity in silicon, germanium and Si1-xGex (O) crystals both at normal and high hydrostatic pressure has been carried out using molecular mechanics, semiempirical and ab initio methods. It was established that the diffusion process of an interstitial oxygen atom (Oi) is controlled by the optimum configuration of three silicon (germanium) atoms nearest to Oi. The calculated values of the activation energy Ea (Si) = 2.59 eV, Ea(Ge) = 2.05 eV and pre-exponential factor D0(Si) = 0.28 cm2 s−1, D0(Ge) = 0.39 cm2 s−1 are in good agreement with experimental ones and for the first time describe perfectly the experimental temperature dependence of the Oi diffusion constant in Si crystals (T = 350–1200 °C). Hydrostatic pressure (P ≤ 80 kbar) results in a linear decrease of the diffusion barrier (∂P Ea (P) = −4.38 × 10−3 eV kbar−1 for Si crystals). The calculated pressure dependence of Oi diffusivity in silicon crystals agrees well with the pressure-enhanced initial growth of oxygen-related thermal donors. The simulation (PM5) has revealed that in Si1-xGex crystals there are two mechanisms of variation of Oi diffusion barrier. The increase of lattice constant leads to the linear increase of the diffusion barrier. Strains around Ge atoms decrease the diffusion barrier. Formation of gradient of diffusion barrier in the volume of Si1-xGex may be responsible for the experimentally observed suppression of generation of TD in Si1-xGex (O) crystals.

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12

Silvestri, H. H., H. Bracht, J. Lundsgaard Hansen, A. Nylandsted Larsen, and E. E. Haller. "Diffusion of silicon in crystalline germanium." Semiconductor Science and Technology 21, no. 6 (April 13, 2006): 758–62. http://dx.doi.org/10.1088/0268-1242/21/6/008.

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13

Chroneos, A., and H. Bracht. "Diffusion ofn-type dopants in germanium." Applied Physics Reviews 1, no. 1 (March 2014): 011301. http://dx.doi.org/10.1063/1.4838215.

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14

Yashina, L. "Germanium diffusion in lead telluride crystal." Solid State Ionics 101-103, no. 1-2 (November 1997): 533–38. http://dx.doi.org/10.1016/s0167-2738(97)00158-6.

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15

YASHINA, L. "Germanium diffusion in lead telluride crystal." Solid State Ionics 101-103 (November 1997): 533–38. http://dx.doi.org/10.1016/s0167-2738(97)84079-9.

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16

Bracht, H., S. Schneider, and R. Kube. "Diffusion and doping issues in germanium." Microelectronic Engineering 88, no. 4 (April 2011): 452–57. http://dx.doi.org/10.1016/j.mee.2010.10.013.

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17

Canneaux, Th, D. Mathiot, J. P. Ponpon, S. Roques, S. Schmitt, and Ch Dubois. "Diffusion of phosphorus implanted in germanium." Materials Science and Engineering: B 154-155 (December 2008): 68–71. http://dx.doi.org/10.1016/j.mseb.2008.08.004.

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18

Minke, M. V., and K. A. Jackson. "Diffusion of germanium in silica glass." Journal of Non-Crystalline Solids 351, no. 27-29 (August 2005): 2310–16. http://dx.doi.org/10.1016/j.jnoncrysol.2005.04.052.

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19

Liu, T., and M. K. Orlowski. "Arsenic diffusion in boron‐doped germanium." Electronics Letters 49, no. 2 (January 2013): 154–56. http://dx.doi.org/10.1049/el.2012.3444.

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20

Skarlatos, Dimitrios, Mario Barozzi, Massimo Bersani, Nikos Z. Vouroutzis, and Vassilios Ioannou-Sougleridis. "Diffusion of implanted nitrogen in germanium." physica status solidi (c) 10, no. 1 (December 10, 2012): 60–63. http://dx.doi.org/10.1002/pssc.201200553.

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21

Wirbeleit, Frank. "Non-Gaussian Local Density Diffusion (LDD-) Model for Boron Diffusion in Si- and Si_xGe_1-x Ultra-Shallow Junction Post-Implant and Advanced Rapid-Thermal-Anneals." Defect and Diffusion Forum 305-306 (October 2010): 71–84. http://dx.doi.org/10.4028/www.scientific.net/ddf.305-306.71.

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Boron diffusion after implant and anneal has been studied extensively in the past, without de-convoluting the Boron diffusion behavior by the initial post implant Boron concentration profile, which is done in this work first time. To support the de-convolution approach, the local density diffusion (LDD) model is selected, because this model is based on just one single arbitrary diffusion parameter per atomic species and host lattice combination. The LDD model is used for Phosphorus and Arsenic diffusion so far and an extension to simulate Boron diffusion in presence of Boron clusters is presented here. As the result, maximum Boron penetration depth post different rapid thermal anneals and the quantification of diffusing and clustering (non-diffusing) Boron in silicon and silicon-germanium host lattice systems are given.

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22

Mehrer, Helmut. "Diffusion and Point Defects in Elemental Semiconductors." Diffusion Foundations 17 (July 2018): 1–28. http://dx.doi.org/10.4028/www.scientific.net/df.17.1.

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Elemental semiconductors play an important role in high-technology equipment used in industry and everyday life. The first transistors were made in the 1950ies of germanium. Later silicon took over because its electronic band-gap is larger. Nowadays, germanium is the base material mainly for γ-radiation detectors. Silicon is the most important semiconductor for the fabrication of solid-state electronic devices (memory chips, processors chips, ...) in computers, cellphones, smartphones. Silicon is also important for photovoltaic devices of energy production.Diffusion is a key process in the fabrication of semiconductor devices. This chapter deals with diffusion and point defects in silicon and germanium. It aims at making the reader familiar with the present understanding rather than painstakingly presenting all diffusion data available a good deal of which may be found in a data collection by Stolwijk and Bracht [1], in the author’s textbook [2], and in recent review papers by Bracht [3, 4]. We mainly review self-diffusion, diffusion of doping elements, oxygen diffusion, and diffusion modes of hybrid foreign elements in elemental semiconductors.Self-diffusion in elemental semiconductors is a very slow process compared to metals. One of the reasons is that the equilibrium concentrations of vacancies and self-interstitials are low. In contrast to metals, point defects in semiconductors exist in neutral and in charged states. The concentrations of charged point defects are therefore affected by doping [2 - 4].

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23

Rus, Florina Stefania, Stefan Danica Novaconi, Paulina Vlazan, and Madalina Ivanovici. "Removal of Methylene Blue by Activated Glass Foams with TiO2 in Dark and Simulated Solar Light." Annals of West University of Timisoara - Physics 61, no. 1 (December 1, 2019): 33–43. http://dx.doi.org/10.2478/awutp-2019-0003.

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AbstractThe effect of germanium trapezoidal profile shape on the direct current (DC) current gain (βF), cut-off frequency (fT) and maximum oscillation frequency (fMAX) of silicon-germanium (SiGe) hetero-junction bipolar transistors (HBTs) has been investigated. The energy balance (EB), hydrodynamic (HD) and drift-diffusion (DD) physical transport models in SILVACO technology computer aided design (T-CAD) simulator were used. It was found that the current gain values using energy balance model are higher than hydrodynamic and much higher than those corresponding to drift-diffusion. Moreover, decreasing the germanium gradient slope towards the collector side of the base enhances the maximum oscillation frequencies using HD and EB models whilst, they remain stable for DD model.

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24

Sgourou, E. N., Y. Panayiotatos, R. V. Vovk, N. Kuganathan, and A. Chroneos. "Diffusion and Dopant Activation in Germanium: Insights from Recent Experimental and Theoretical Results." Applied Sciences 9, no. 12 (June 15, 2019): 2454. http://dx.doi.org/10.3390/app9122454.

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Germanium is an important mainstream material for many nanoelectronic and sensor applications. The understanding of diffusion at an atomic level is important for fundamental and technological reasons. In the present review, we focus on the description of recent studies concerning n-type dopants, isovalent atoms, p-type dopants, and metallic and oxygen diffusion in germanium. Defect engineering strategies considered by the community over the past decade are discussed in view of their potential application to other systems.

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25

Naganawa, Miki, Yasuo Shimizu, Masashi Uematsu, Kohei M. Itoh, Kentarou Sawano, Yasuhiro Shiraki, and Eugene E. Haller. "Charge states of vacancies in germanium investigated by simultaneous observation of germanium self-diffusion and arsenic diffusion." Applied Physics Letters 93, no. 19 (November 10, 2008): 191905. http://dx.doi.org/10.1063/1.3025892.

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26

Kim, Young-Kyu, Kwan-Sun Yoon, Joong-Sik Kim, and Taeyoung Won. "Atomistic Simulation of Boron Diffusion with Charged Defects and Diffusivity in Strained Si/SiGe." Journal of Nanoscience and Nanotechnology 7, no. 11 (November 1, 2007): 4084–88. http://dx.doi.org/10.1166/jnn.2007.002.

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We discuss the boron diffusion in a biaxial tensile strained {001} Si and SiGe layer with kinetic Monte Carlo (KMC) method. We created a strain in silicon by adding a germanium mole fraction in silicon in order to perform a theoretical analysis. The generation of a strain in silicon influences in the diffusivity as well as the penetration profile during the implantation. The strain energy for the charged defects has been calculated from the ab-initio calculation while the diffusivity of boron was extracted from the Arrhenius formula. Hereby, the influence of the germanium content on the dopant diffusivity was estimated. Our KMC study revealed that the diffusion of the B atoms was retarded with increasing Germanium mole fraction in a strained silicon layer. Furthermore, we derived a functional dependence of the in-plane strain as well as the out-of-plane strain on the germanium mole fraction, which lies in the distribution of equivalent stresses along the Si/SiGe interface.

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27

Kim, Young-Kyu, Kwan-Sun Yoon, Joong-Sik Kim, and Taeyoung Won. "Atomistic Simulation of Boron Diffusion with Charged Defects and Diffusivity in Strained Si/SiGe." Journal of Nanoscience and Nanotechnology 7, no. 11 (November 1, 2007): 4084–88. http://dx.doi.org/10.1166/jnn.2007.18082.

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We discuss the boron diffusion in a biaxial tensile strained {001} Si and SiGe layer with kinetic Monte Carlo (KMC) method. We created a strain in silicon by adding a germanium mole fraction in silicon in order to perform a theoretical analysis. The generation of a strain in silicon influences in the diffusivity as well as the penetration profile during the implantation. The strain energy for the charged defects has been calculated from the ab-initio calculation while the diffusivity of boron was extracted from the Arrhenius formula. Hereby, the influence of the germanium content on the dopant diffusivity was estimated. Our KMC study revealed that the diffusion of the B atoms was retarded with increasing Germanium mole fraction in a strained silicon layer. Furthermore, we derived a functional dependence of the in-plane strain as well as the out-of-plane strain on the germanium mole fraction, which lies in the distribution of equivalent stresses along the Si/SiGe interface.

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28

Chroneos, A. "Effect of germanium substrate loss and nitrogen on dopant diffusion in germanium." Journal of Applied Physics 105, no. 5 (March 2009): 056101. http://dx.doi.org/10.1063/1.3086664.

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29

Giese, A., Hartmut Bracht, Nicolaas Stolwijk, and Helmut Mehrer. "Diffusion of Nickel and Zinc in Germanium." Defect and Diffusion Forum 143-147 (January 1997): 1059–66. http://dx.doi.org/10.4028/www.scientific.net/ddf.143-147.1059.

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30

Ioannou, N., D. Skarlatos, N. Z. Vouroutzis, S. N. Georga, C. A. Krontiras, and C. Tsamis. "Gallium Implantation and Diffusion in Crystalline Germanium." Electrochemical and Solid-State Letters 13, no. 3 (2010): H70. http://dx.doi.org/10.1149/1.3274801.

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31

Mitha, Salman, Michael J. Aziz, David Schiferl, and David B. Poker. "Activation volume for arsenic diffusion in germanium." Applied Physics Letters 69, no. 7 (August 12, 1996): 922–24. http://dx.doi.org/10.1063/1.116944.

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32

Armour, N., and S. Dost. "Diffusion Limited Silicon Dissolution into Germanium Melt." Journal of Physics: Conference Series 327 (December 6, 2011): 012016. http://dx.doi.org/10.1088/1742-6596/327/1/012016.

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33

Lever, R. F., J. M. Bonar, and A. F. W. Willoughby. "Boron diffusion across silicon–silicon germanium boundaries." Journal of Applied Physics 83, no. 4 (February 15, 1998): 1988–94. http://dx.doi.org/10.1063/1.366927.

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34

Stolwijk, N. A., W. Frank, J. Hölzl, S. J. Pearton, and E. E. Haller. "Diffusion and solubility of copper in germanium." Journal of Applied Physics 57, no. 12 (June 15, 1985): 5211–19. http://dx.doi.org/10.1063/1.335259.

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35

Uppal, Suresh, Arthur F. W. Willoughby, Janet M. Bonar, Alan G. R. Evans, Nick E. B. Cowern, Richard Morris, and Mark G. Dowsett. "Diffusion of ion-implanted boron in germanium." Journal of Applied Physics 90, no. 8 (October 15, 2001): 4293–95. http://dx.doi.org/10.1063/1.1402664.

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36

Edelman, L. A., M. S. Phen, K. S. Jones, R. G. Elliman, and L. M. Rubin. "Boron diffusion in amorphous silicon-germanium alloys." Applied Physics Letters 92, no. 17 (April 28, 2008): 172108. http://dx.doi.org/10.1063/1.2919085.

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37

Lauwaert, J., S. Hens, P. Śpiewak, D. Wauters, D. Poelman, I. Romandic, P. Clauws, and J. Vanhellemont. "Simulation of point defect diffusion in germanium." Physica B: Condensed Matter 376-377 (April 2006): 257–61. http://dx.doi.org/10.1016/j.physb.2005.12.067.

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38

Chroneos, A., D. Skarlatos, C. Tsamis, A. Christofi, D. S. McPhail, and R. Hung. "Implantation and diffusion of phosphorous in germanium." Materials Science in Semiconductor Processing 9, no. 4-5 (August 2006): 640–43. http://dx.doi.org/10.1016/j.mssp.2006.10.001.

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39

Tsouroutas, P., D. Tsoukalas, I. Zergioti, N. Cherkashin, and A. Claverie. "Diffusion and activation of phosphorus in germanium." Materials Science in Semiconductor Processing 11, no. 5-6 (October 2008): 372–77. http://dx.doi.org/10.1016/j.mssp.2008.09.005.

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40

Panayiotatos, Y., V. Saltas, A. Chroneos, and F. Vallianatos. "Tin diffusion in germanium: a thermodynamic approach." Journal of Materials Science: Materials in Electronics 28, no. 13 (March 27, 2017): 9936–40. http://dx.doi.org/10.1007/s10854-017-6751-7.

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41

Aronowitz, Sheldon. "Dopant diffusion control in silicon using germanium." Journal of Applied Physics 68, no. 7 (October 1990): 3293–97. http://dx.doi.org/10.1063/1.347170.

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42

Bouchetout, A. L., Nouar Tabet, and Claude J. A. Monty. "Germanium Impurity Diffusion in Boron Doped Silicon." Materials Science Forum 10-12 (January 1986): 127–32. http://dx.doi.org/10.4028/www.scientific.net/msf.10-12.127.

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43

Ioannou-Sougleridis, V., S. Alafakis, B. Pécz, D. Velessiotis, N. Z. Vouroutzis, S. Ladas, M. Barozzi, G. Pepponi, and D. Skarlatos. "Post-metallization annealing and photolithography effects in p-type Ge/Al₂O₃/Al MOS structures." ECS Journal of Solid State Science and Technology 11, no. 4 (April 1, 2022): 045006. http://dx.doi.org/10.1149/2162-8777/ac62f2.

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In this work, the combined effect of negative tone photolithography and post-metallization annealing (PMA) on the electrical behavior of Al/Al2O3/p-Ge MOS structures are investigated. During photoresist development, the exposed upper part of the Al2O3 film weakens due to the reaction with the developer. Subsequent processes of Al deposition and PMA at 350 °C result in alumina thickness reduction. The gate electrode formation seems to involve at least three processes: (a) germanium substrate out-diffusion and accumulation at the top of the alumina layer that takes place during the alumina deposition, (b) alumina destabilization, and (c) germanium diffusion into the deposited Al metal and Al diffusion into the alumina. The overall effect is the reduction of the alumina thickness due to its partial consumption. It is shown that the germanium diffusion depends on the annealing duration, and not on the annealing ambient (inert or forming gas). Although PMA passivates interface traps near the valence band edge, the insulating properties of the stacks are degraded. This degradation appears as a low-level ac loss, attributed to a hopping current that flows through the Al2O3 layer. The results are discussed and compared to recently reported on Pt/Al2O3/p-Ge structures formed and treated under the same conditions.

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44

Wirbeleit, Frank. "Local Density Diffusivity (LDD-) Model for Boron Out-Diffusion of In Situ Boron-Doped Si_0.75Ge_0.25 Epitaxial Films Post Advanced Rapid Thermal Anneals with Carbon Co-Implant." Defect and Diffusion Forum 307 (December 2010): 63–73. http://dx.doi.org/10.4028/www.scientific.net/ddf.307.63.

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Boron in silicon has presented challenges for decades because of clustering and so-called transient enhanced diffusion [1-2]. An understanding of boron diffusion post rapid thermal annealing in general, and out of in situ doped epitaxially grown silicon-germanium films in particular, is essential to hetero junction engineering in microelectronic device technology today. In order to model boron diffusion, post-implantation, the local density diffusion (LDD) model has been applied in the past [3]. Via mathematical convolution of the diffusion model slope and the initial boron concentration profile, these former results were transferred to this work. In this way, non-diffusing boron was predicted to exist in the center of the presented in situ boron-doped films. In addition, boron diffusion control by co-implanted carbon was demonstrated and the applied LDD model was completed and confirmed by adapting A. Einstein’s proof [4] for this purpose.

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45

Walther, T. "Diffusion Processes in Strained Silicon Germanium Island Structures." Defect and Diffusion Forum 183-185 (August 2000): 53–60. http://dx.doi.org/10.4028/www.scientific.net/ddf.183-185.53.

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46

Salvador, Sgarbossa, Maggioni, Napolitani, Carraro, Carturan, Raniero, et al. "Advanced Diffusion Strategies for Junction Formation in Germanium." Proceedings 26, no. 1 (September 5, 2019): 39. http://dx.doi.org/10.3390/proceedings2019026039.

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The investigation of innovative dynamical processes for the fabrication of highly doped andhigh quality Ge layers is currently a hot topic in many applicative fields such as nanoelectronics,photonics and radiation detectors. [...]

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47

Stolwijk, Nicolaas A., and Ludmila Lerner. "Vacancy properties in germanium probed by cobalt diffusion." Journal of Applied Physics 110, no. 3 (August 2011): 033526. http://dx.doi.org/10.1063/1.3609070.

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Schmidtbauer, Jan, Roman Bansen, Robert Heimburger, Thomas Teubner, Torsten Boeck, and Roberto Fornari. "Germanium nanowire growth controlled by surface diffusion effects." Applied Physics Letters 101, no. 4 (July 23, 2012): 043105. http://dx.doi.org/10.1063/1.4737004.

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Cai, Yan, Rodolfo Camacho-Aguilera, Jonathan T. Bessette, Lionel C. Kimerling, and Jurgen Michel. "High phosphorous doped germanium: Dopant diffusion and modeling." Journal of Applied Physics 112, no. 3 (August 2012): 034509. http://dx.doi.org/10.1063/1.4745020.

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Kube, R., H. Bracht, A. Chroneos, M. Posselt, and B. Schmidt. "Intrinsic and extrinsic diffusion of indium in germanium." Journal of Applied Physics 106, no. 6 (September 15, 2009): 063534. http://dx.doi.org/10.1063/1.3226860.

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