Relevant bibliographies by topics / Ge1–xSnx

Academic literature on the topic 'Ge1–xSnx'

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Published: 25 May 2024

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Journal articles on the topic "Ge1–xSnx"

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Jang, Han-Soo, Jong Hee Kim, Vallivedu Janardhanam, Hyun-Ho Jeong, Seong-Jong Kim, and Chel-Jong Choi. "Microstructural Evolution of Ni-Stanogermanides and Sn Segregation during Interfacial Reaction between Ni Film and Ge1−xSnx Epilayer Grown on Si Substrate." Crystals 14, no. 2 (January 28, 2024): 134. http://dx.doi.org/10.3390/cryst14020134.

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The Ni-stanogermanides were formed via an interfacial reaction between Ni film and a Ge1−xSnx (x = 0.083) epilayer grown on a Si substrate driven by thermal treatment, and their microstructural and chemical features were investigated as a function of a rapid thermal annealing (RTA) temperature. The Ni3(Ge1−xSnx) phase was formed at the RTA temperature of 300 °C, above which Ni(Ge1−xSnx) was the only phase formed. The fairly uniform Ni(Ge1−xSnx) film was formed without unreactive Ni remaining after annealing at 400 °C. However, the Ni(Ge1−xSnx) film formed at 500 °C exhibited large surface and interface roughening, followed by the formation of Ni(Ge1−xSnx) islands eventually at 600 °C. The Sn concentration in Ni(Ge1−xSnx) gradually decreased with increasing RTA temperature, implying the enhancement of Sn out-diffusion from Ni(Ge1−xSnx) grains during the Ni-stanogermanidation process at higher temperature. The out-diffused Sn atoms were accumulated on the surface of Ni(Ge1−xSnx), which could be associated with the low melting temperature of Sn. On the other hand, the out-diffusion of Sn atoms from Ni(Ge1−xSnx) along its interface was dominant during the Ni/Ge1−xSnx interfacial reaction, which could be responsible for the segregation of metallic Sn grains that were spatially confined near the edge of Ni(Ge1−xSnx) islands.
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Nakatsuka, Osamu, Yosuke Shimura, Shotaro Takeuchi, Noramasa Tsutsui, and Shigeaki Zaima. "Growth and Characterization of Ge1-xSnx Layers for High Mobility Tensile-Strained Ge Channels of CMOS Devices." Materials Science Forum 654-656 (June 2010): 1788–91. http://dx.doi.org/10.4028/www.scientific.net/msf.654-656.1788.

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We have investigated the growth and characteristics of heteroepitaxial Ge1-xSnx layers on various substrates. The low temperature growth and the large misfit strain between Ge1-xSnx and Si leads to the high density of defects such as vacancy in Ge1-xSnx layers. They effectively enhance the propagation of misfit dislocations and the strain relaxation with suppressing the precipitation of Sn atoms from Ge1-xSnx layers. We succeeded in growing strain-relaxed Ge1-xSnx layers with a Sn content over 9% by controlling the dislocation structure on Si substrates. We also characterized the Hall mobility of Ge1-xSnx layers and found that the incorporation of Sn into Ge effectively reduced the concentration of holes related with vacancy defects, and improved on the hole mobility.
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Huang, Hongjuan, Desheng Zhao, Chengjian Qi, Jingfa Huang, Zhongming Zeng, Baoshun Zhang, and Shulong Lu. "Effect of Growth Temperature on Crystallization of Ge1−xSnx Films by Magnetron Sputtering." Crystals 12, no. 12 (December 12, 2022): 1810. http://dx.doi.org/10.3390/cryst12121810.

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Ge1−xSnx film with Sn content (at%) as high as 13% was grown on Si (100) substrate with Ge buffer layer by magnetron sputtering epitaxy. According to the analysis of HRXRD and Raman spectrum, the quality of the Ge1−xSnx crystal was strongly dependent on the growth temperature. Among them, the GeSn (400) diffraction peak of the Ge1−xSnx film grown at 240 °C was the lowest, which is consistent with the Raman result. According to the transmission electron microscope image, some dislocations appeared at the interface between the Ge buffer layer and the Si substrate due to the large lattice mismatch, but a highly ordered atomic arrangement was observed at the interface between the Ge buffer layer and the Ge1−xSnx layer. The Ge1−xSnx film prepared by magnetron sputtering is expected to be a cost-effective fabrication method for Si-based infrared devices.
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Nakatsuka, Osamu, Shotaro Takeuchi, Yosuke Shimura, Akira Sakai, and Shigeaki Zaima. "Strained Ge and Ge1-xSnx Technology for Future CMOS Devices." Key Engineering Materials 470 (February 2011): 146–51. http://dx.doi.org/10.4028/www.scientific.net/kem.470.146.

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We have investigated the growth and crystalline structures of Ge1-xSnx buffer and tensile-strained Ge layers for future use in CMOS technology. We have demonstrated that strain relaxed Ge1-xSnx layers with an Sn content of 12.3% and 9.2% can be grown on Ge and Si substrates, respectively. We achieved a tensile-strain value of 0.71 % in Ge layers on a Ge0.932Sn0.068 buffer layer. We have also investigated the effects of Sn incorporation into Ge on the electrical properties of Ge1-xSnx heteroepitaxial layers.
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Mahmodi, Hadi, Md Hashim, Tetsuo Soga, Salman Alrokayan, Haseeb Khan, and Mohamad Rusop. "Synthesis of Ge1−xSnx Alloy Thin Films by Rapid Thermal Annealing of Sputtered Ge/Sn/Ge Layers on Si Substrates." Materials 11, no. 11 (November 12, 2018): 2248. http://dx.doi.org/10.3390/ma11112248.

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In this work, nanocrystalline Ge1−xSnx alloy formation from a rapid thermal annealed Ge/Sn/Ge multilayer has been presented. The multilayer was magnetron sputtered onto the Silicon substrate. This was followed by annealing the layers by rapid thermal annealing, at temperatures of 300 °C, 350 °C, 400 °C, and 450 °C, for 10 s. Then, the effect of thermal annealing on the morphological, structural, and optical characteristics of the synthesized Ge1−xSnx alloys were investigated. The nanocrystalline Ge1−xSnx formation was revealed by high-resolution X-ray diffraction (HR-XRD) measurements, which showed the orientation of (111). Raman results showed that phonon intensities of the Ge-Ge vibrations were improved with an increase in the annealing temperature. The results evidently showed that raising the annealing temperature led to improvements in the crystalline quality of the layers. It was demonstrated that Ge-Sn solid-phase mixing had occurred at a low temperature of 400 °C, which led to the creation of a Ge1−xSnx alloy. In addition, spectral photo-responsivity of a fabricated Ge1−xSnx metal-semiconductor-metal (MSM) photodetector exhibited its extending wavelength into the near-infrared region (820 nm).
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Sun, Sheng Liu, Li Xin Zhang, Wen Qi Huang, Zhen Yu Chen, Hao Wang, and Chun Qian Zhang. "First-Principal Investigation of Lattice Constants of Si<sub>1-<i>x</i></sub>Ge<i><sub>x</sub></i>, Si<sub>1-<i>x</i></sub>Sn<i><sub>x</sub></i> and Ge<sub>1-<i>x</i></sub>Sn<i><sub>x</sub></i>." Nano Hybrids and Composites 34 (February 23, 2022): 77–82. http://dx.doi.org/10.4028/p-uk1s72.

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Silicon-based materials are significant candidates for electronic and optoelectronic applications because of their high electron and hole mobility. Si1-xGex, Si1-xSnx and Ge1-xSnx are currently hot materials in the field of fabricanting silicon-based light-emitting sources. At present, GeSn has been experimentally proved to have a direct band gap structure and achieve photoluminescence. But the more practical electroluminescence has not been realized. There are two reasons of these: one is the cost of experiment is high, which makes it impossible to conduct a comprehensive and in-depth study on these materials; Additionally, the variational laws of the lattice constants have not been reported due to the lack of theoretical and experimental data. In this paper, the lattice constants and bowing factor of Si1-xGex, Si1-xSnx and Ge1-xSnx have been studied by the first-principles method based on density functional theory (DFT) combined with the Special Quasirandom Structures (SQS) and hybrid function of Heyd-Scuseria-Ernzerhof (HSE) functional correction. Comparing the calculated data with the reported theoretical and experimental data, the results show our method is more accurate. In addition, the lattice constant fitting formulas of Si1-xGex, Si1-xSnx and Ge1-xSnx are given, it shows Si1-xSnx can reduce the lattice mismatch when Si1-xSnx as the buffer between Si and GeSn alloy.
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Yu-Chen, Li. "Evaluation of the Key Physical Parameters of Compressive Strained Ge1-x Snx for Optoelectronic Devices." Journal of Computational and Theoretical Nanoscience 13, no. 10 (October 1, 2016): 7399–407. http://dx.doi.org/10.1166/jctn.2016.5733.

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Both strain technology and alloying technology can change the band structures of Germanium semiconductor. This paper focus on evaluation of the key physical parameters, such as energy levels and effective mass, of germanium under strain and alloy conditions, on the basis of deformation potential theory and kp perturbation theory. The results show that: (1), The bandgap transition in Ge1-xSnx alloy cannot occur under strain. So the transformation efficiency of the strained Ge1-xSnx/(001)Ge based devices can not be improved; (2), The various hole effective masses of strained Ge1-xSnx/(001)Ge decrease with the increase of the stress, which benefits to the pMOS performance improvement. Our valid models can provide the valuable references to the design of modified Ge semiconductor and optoelectronic devices.
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Concepción Díaz, Omar, Nicolaj Brink Søgaard, Oliver Krause, Jin Hee Bae, Thorsten Brazda, Andreas T. Tiedemann, Qing-Tai Zhao, Detlev Grützmacher, and Dan Buca. "(Si)GeSn Isothermal Multilayer Growth for Specific Applications Using GeH4 and Ge2H6." ECS Meeting Abstracts MA2022-02, no. 32 (October 9, 2022): 1162. http://dx.doi.org/10.1149/ma2022-02321162mtgabs.

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The experimental demonstration of Ge1-xSnx alloys lasers opened group-IV materials towards high-performance electronic and photonic devices that can be easily integrated with the current Si semiconductor technology. In recent years, GeSn-based optoelectronic devices including light-emitting and detectors, modulators, and CMOS have been proven. The major challenges for the Ge1-xSnx epitaxy arise from the low solid solubility of Sn in Ge, the large lattice mismatch, and the reduced thermal stability between Ge and Sn. All these are becoming extremely critical at higher Sn contents. Non-equilibrium conditions offered by molecular beam epitaxy (MBE), chemical vapor deposition (CVD), flash lamp, or laser annealing have been lately investigated. Between them, CVD is to date the preferred growth technique for its current development compatible with the industry offering micron-thick layers with the highest crystal quality. While Tin-tetrachloride (SnCl4) becomes the standard Sn precursor, for Ge different gasses, like germane (GeH4) and digermane (Ge2H6) are used attempting to archive high Sn incorporation and high material quality. While Ge1-xSnx films with the same high Sn content can be obtained regardless of the used precursor, the advantages and disadvantages of each precursor are discussed in this work. The use of Ge2H6 is accompanied by high growth rates, being favorable in applications where relatively thick films are needed, such as laser structures. On the other hand, with a relatively low growth rate, GeH4 provides a greater thickness control, achieving clear and sharp interfaces in heterostructures. For this reason, GeH4 is the appropriate precursor for quantum transport or spintronic. The biggest challenge in heterostructure designs is going up and down in Sn content. The growth of a Ge1-ySny on a Ge1-xSnx, y<x, or SiGeSn layer cannot be performed by increasing the growth temperature. Post-annealing processes lead to strong crystallinity degradation of the already grown layer by strong Sn diffusion or Sn segregation due to the limited thermal stability of Ge1-xSnx alloys. In this work, we address simple methodologies to enhance the gradient or step Sn content without changing the process temperature. Controlling only the carrier gas flow while keeping the standard growth parameters constant, high-quality Ge1-xSnx alloys with uniform Sn content up to 15 at.% are obtained. The proposed method acts as guidance to produce Ge1-xSnx heterostructures that can be extended to any CVD reactor, independently of the used precursor, GeH4 or Ge2H6. Different devices structures are presented proving the applicability of the isothermal multilayer growth. Figure 1
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Wangila, Emmanuel, Calbi Gunder, Petro M. Lytvyn, Mohammad Zamani-Alavijeh, Fernando Maia de Oliveira, Serhii Kryvyi, Hryhorii Stanchu, et al. "The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire." Crystals 14, no. 5 (April 28, 2024): 414. http://dx.doi.org/10.3390/cryst14050414.

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Ge1−xSnx growth on a new sapphire platform has been demonstrated. This involved the growth of GeSn on Ge/GaAs layers using the algorithm developed. The resultant growths of Ge on GaAs/AlAs/sapphire and Ge1−xSnx on Ge/GaAs/AlAs/sapphire were investigated by in situ and ex situ characterization techniques to ascertain the surface morphology, crystal structure, and quality. The growth mode of Ge on GaAs was predominantly two-dimensional (2D), which signifies a layer-by-layer deposition, contributing to enhanced crystal quality in the Ge/GaAs system. The growth of Ge1−xSnx with 10% Sn on a graded profile for 30 min shows uniform composition and a strong peak on the reciprocal space map (RSM). On the other hand, the partially relaxed growth of the alloy on RSM was established.
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Qiu, Yingxin, Runsheng Wang, Qianqian Huang, and Ru Huang. "Study on the Ge1−xSnx/HfO2 interface and its impacts on Ge1−xSnx tunneling transistor." Journal of Applied Physics 115, no. 23 (June 21, 2014): 234505. http://dx.doi.org/10.1063/1.4883760.

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Dissertations / Theses on the topic "Ge1–xSnx"

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Khelidj, Hamza. "Elaboration de films minces semi-conducteurs Ge1-xSnx et leurs contacts ohmiques." Electronic Thesis or Diss., Aix-Marseille, 2021. http://www.theses.fr/2021AIXM0406.

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L’objectif de cette thèse est d’étudier la fabrication de films minces semi-conducteurs Ge1–xSnx par pulvérisation cathodique magnétron et leurs contacts ohmiques par diffusion réactive. La cristallisation et la croissance cristalline de Ge1–xSnx ont été étudiées. La cristallisation d'une couche amorphe de Ge1–xSnx déposée à température ambiante conduit à la croissance de films polycristallins. De plus, la compétition entre la séparation de phases Ge/Sn et la croissance Ge1–xSnx empêche la formation de couches de Ge1–xSnx riches en Sn à gros grains sans formation d’îlots de β-Sn en surface. Cependant, une croissance à T = 360 °C d'un film de Ge0.9Sn0.1 pseudo-cohérent fortement relaxé avec une faible concentration d'impuretés (< 2 × 1019 cm–3) et une résistivité électrique de quatre ordres de grandeur plus petite que celle du Ge non dopé a été obtenue. Nous avons montré que la mesure du coefficient de Seebeck pour les couches minces de Ge et de Ge1–xSnx permet à la fois de déterminer le type de dopage, la concentration et la variation des mécanismes de diffusion des porteurs de charges. La réaction à l'état solide de Ni/Ge0.9Sn0.1 montre une croissance séquentielle de deux phases. La phase qui se forme en premier est la phase Ni5(GeSn)3, cette dernière est stable jusqu’à 290°C. Puis, à 275 °C, la phase Ni(GeSn) a été observée. Cette phase est stable jusqu'à 430 °C. Un retard de la formation de la phase Ni(GeSn) par rapport à la phase NiGe a été constaté. De plus, la stabilité thermique de la phase NiGe est fortement dégradée par l’ajout du Sn. La cinétique de croissance des phases ainsi que la cinétique de ségrégation du Sn dans la phase Ni(GeSn) ont été étudiées
The aim of this thesis is to study the fabrication of Ge1–xSnx thin films semiconductors by magnetron sputtering and their ohmic contacts by reactive diffusion. The crystallization and the crystalline growth of Ge1–xSnx were studied. The crystallization of an amorphous Ge1–xSnx layer deposited at room temperature leads to a polycrystalline growth. In addition, the competition between Ge / Sn phase separation and Ge1–xSnx growth prevents the formation of large-grain Sn-rich Ge1–xSnx films without the formation of β-Sn islands on the surface. However, the growth at T = 360 ° C of a highly relaxed pseudo-coherent Ge0.9Sn0.1 film on Si(100) with a low concentration of impurities (< 2 × 1019 cm–3) and an electrical resistivity four orders of magnitude smaller than undoped Ge was obtained. We have shown that the measurement of the Seebeck coefficient for Ge and Ge1–xSnx thin films allows the determination of the type of doping, the concentration of the charge carriers and the variation of the scattering mechanisms. The solid state reaction of Ni /Ge0.9Sn0.1 shows a sequential growth of two phases. The first phase to form was the Ni5(GeSn)3 phase, which is stable up to 290 ° C. Then, at 275 ° C, the Ni(GeSn) phase was observed. This phase is stable up to 430 ° C. A delay in the formation of the Ni(GeSn) phase compared to the NiGe phase was observed. In addition, the thermal stability of the NiGe phase is highly affected by the addition of Sn. The phase growth kinetics as well as the Sn segregation kinetics in the Ni(GeSn) phase were studied
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Esteves, Richard J. "The Dawn of New Quantum Dots: Synthesis and Characterization of Ge1-xSnx Nanocrystals for Tunable Bandgaps." VCU Scholars Compass, 2016. http://scholarscompass.vcu.edu/etd/4637.

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Ge1-xSnx alloys are among a small class of benign semiconductors with composition tunable bandgaps in the near-infrared spectrum. As the amount of Sn is increased the band energy decreases and a transition from indirect to direct band structure occurs. Hence, they are prime candidates for fabrication of Si-compatible electronic and photonic devices, field effect transistors, and novel charge storage device applications. Success has been achieved with the growth of Ge1-xSnx thin film alloys with Sn compositions up to 34%. However, the synthesis of nanocrystalline alloys has proven difficult due to larger discrepancies (~14%) in lattice constants. Moreover, little is known about the chemical factors that govern the growth of Ge1-xSnx nanoalloys and the effects of quantum confinement on structure and optical properties. A synthesis has been developed to produce phase pure Ge1-xSnx nanoalloys which provides control over both size and composition. Three sets of Ge1-xSnx nanocrystals have been studied, 15–23 nm, 3.4–4.6 nm and 1.5–2.5 nm with Sn compositions from x = 0.000–0.279. Synthetic parameters were explored to control the nucleation and growth as well as the factors that have led to the elimination of undesired metallic impurities. The structural analysis of all nanocrystals suggests the diamond cubic structure typically reported for Ge1-xSnx thin films and nanocrystalline alloys. As-synthesized Ge1-xSnx nanoalloys exhibit high thermal stability and moderate resistance against sintering up to 400–500 °C and are devoid of crystalline and amorphous elemental Sn impurities.
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Tallapally, Venkatesham. "Colloidal Synthesis and Photophysical Characterization of Group IV Alloy and Group IV-V Semiconductors: Ge1-xSnx and Sn-P Quantum Dots." VCU Scholars Compass, 2018. https://scholarscompass.vcu.edu/etd/5568.

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Nanomaterials, typically less than 100 nm size in any direction have gained noteworthy interest from scientific community owing to their significantly different and often improved physical properties compared to their bulk counterparts. Semiconductor nanoparticles (NPs) are of great interest to study their tunable optical properties, primarily as a function of size and shape. Accordingly, there has been a lot of attention paid to synthesize discrete semiconducting nanoparticles, of where Group III-V and II-VI materials have been studied extensively. In contrast, Group IV and Group IV-V based nanocrystals as earth abundant and less-non-toxic semiconductors have not been studied thoroughly. From the class of Group IV, Ge1-xSnx alloys are prime candidates for the fabrication of Si-compatible applications in the field of electronic and photonic devices, transistors, and charge storage devices. In addition, Ge1-xSnx alloys are potentials candidates for bio-sensing applications as alternative to toxic materials. Tin phosphides, a class of Group IV-V materials with their promising applications in thermoelectric, photocatalytic, and charge storage devices. However, both aforementioned semiconductors have not been studied thoroughly for their full potential in visible (Vis) to near infrared (NIR) optoelectronic applications. In this dissertation research, we have successfully developed unique synthetic strategies to produce Ge1-xSnx alloy quantum dots (QDs) and tin phosphide (Sn3P4, SnP, and Sn4P3) nanoparticles with tunable physical properties and crystal structures for potential applications in IR technologies. Low-cost, less-non-toxic, and abundantly-produced Ge1-xSnx alloys are an interesting class of narrow energy-gap semiconductors that received noteworthy interest in optical technologies. Admixing of α-Sn into Ge results in an indirect-to-direct bandgap crossover significantly improving light absorption and emission relative to indirect-gap Ge. However, the narrow energy-gaps reported for bulk Ge1-xSnx alloys have become a major impediment for their widespread application in optoelectronics. Herein, we report the first colloidal synthesis of Ge1-xSnx alloy quantum dots (QDs) with narrow size dispersity (3.3±0.5 – 5.9±0.8 nm), wide range of Sn compositions (0–20.6%), and composition-tunable energy-gaps and near infrared (IR) photoluminescence (PL). The structural analysis of alloy QDs indicates linear expansion of cubic Ge lattice with increasing Sn, suggesting the formation of strain-free nanoalloys. The successful incorporation of α-Sn into crystalline Ge has been confirmed by electron microscopy, which suggests the homogeneous solid solution behavior of QDs. The quantum confinement effects have resulted in energy gaps that are significantly blue-shifted from bulk Ge for Ge1-xSnx alloy QDs with composition-tunable absorption onsets (1.72–0.84 eV for x=1.5–20.6%) and PL peaks (1.62–1.31 eV for x=1.5–5.6%). Time-resolved PL (TRPL) spectroscopy revealed microsecond and nanosecond timescale decays at 15 K and 295 K, respectively owing to radiative recombination of dark and bright excitons as well as the interplay of surface traps and core electronic states. Realization of low-to-non-toxic and silicon-compatible Ge1-xSnx QDs with composition-tunable near IR PL allows the unprecedented expansion of direct-gap Group IV semiconductors to a wide range of biomedical and advanced technological studies. Tin phosphides are a class of materials that received noteworthy interest in photocatalysis, charge storage and thermoelectric devices. Dual stable oxidation states of tin (Sn2+ and Sn4+) enable tin phosphides to exhibit different stoichiometries and crystal phases. However, the synthesis of such nanostructures with control over morphology and crystal structure has proven a challenging task. Herein, we report the first colloidal synthesis of size, shape, and phase controlled, narrowly disperse rhombohedral Sn4P3, hexagonal SnP, and amorphous tin phosphide nanoparticles (NPs) displaying tunable morphologies and size dependent physical properties. The control over NP morphology and crystal phase was achieved by tuning the nucleation/growth temperature, molar ratio of Sn/P, and incorporation of additional coordinating solvents (alkylphosphines). The absorption spectra of smaller NPs exhibit size-dependent blue shifts in energy gaps (0.88–1.38 eV) compared to the theoretical value of bulk Sn3P4 (0.83 eV), consistent with quantum confinement effects. The amorphous NPs adopt rhombohedral Sn4P3 and hexagonal SnP crystal structures at 180 and 250 °C, respectively. Structural and surface analysis indicates consistent bond energies for phosphorus across different crystal phases, whereas the rhombohedral Sn4P3 NPs demonstrate Sn oxidation states distinctive from those of the hexagonal and amorphous NPs owing to complex chemical structure. All phases exhibit N(1s) and ʋ(N-H) energies suggestive of alkylamine surface functionalization and are devoid of tetragonal Sn impurities.
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Gao, Jia Jun, and 高嘉駿. "Graded Ge1-xSnx Photodetectors Fabricated on Si Substrates by Rapid Melt Growth Method." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/51915136403158257287.

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碩士
國立清華大學
光電工程研究所
104
Germanium-Tin (GeSn) semiconductor alloy has been considered as a candidate for implementing active Group IV optoelectronics. In this thesis, a Ge1-xSnx metal-semiconductor-metal (MSM) photodetector fabricated on Si substrate by rapid melt growth method with graded Sn concentration up to 5-10 %, which is higher than the solid solubility (~ 1 %) of Sn in Ge is demonstrated. The crystal orientation and elemental composition of the GeSn alloy are characterized by selected area diffraction (SAD) pattern and energy dispersion spectroscopy (EDS), showing a monocrystalline semiconductor quality and Sn concentration profile. This crystal quality of GeSn alloy is also investigated by Raman spectroscopy. Finally, we measure the photocurrent of the device and verify the GeSn MSM photodetector has a mid-IR photoresponse at wavelength of 2 μm.
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Wu, Tzung-Hsian, and 吳宗憲. "Investigation of Ge1-xSnx/Ge with high Sn composition grown at low temperature." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/77774823809751561359.

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碩士
國立臺灣大學
電子工程學研究所
99
We report on experimental investigations of the growth of Ge1-xSnx film with thickness above the critical thickness using Molecular Beam Epitaxy. A series of Ge1-xSnx films with various Sn compositions up to 14% are deposited on a Ge buffer layer for growth at low temperatures close to the melting point of Sn. Especially, a low temperature Ge buffer layer was grown between GeSn film and Ge substrate for trapping defects. Analysis of various measurements shows that the Ge1-xSnx film is defect free in the XTEM image and that Sn is distributed almost uniformly in the film for Sn compositions up to 9.3%. The Sn composition of the films is higher than the Sn composition that is theoretically predicted to cause the energy band of Ge to change from an indirect to a direct bandgap; thus, the present nvestigation provides a method for growing direct bandgap GeSn film, which is desired for use in applications involving optoelectronic devices.
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Hong, Yong-An, and 洪永安. "First Principle Study of Band Structures and Optical Properties in Ge1-xSnx Semiconductor Alloy." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/b9dqrw.

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碩士
國立中興大學
精密工程學系所
99
We conduct first-principles total-energy density functional calculations to study the band structures in Ge1-xSnx infrared semiconductor alloys. The sX-LDA(Screened exchange local density approximation) and HSE06(Heyd scuseria ernzerhof hybrid functional) calculations to study the band structure in Ge1-xSnx semiconductor alloys. The norm-conserving optimized pseudopotentials of Ge and Sn have been constructed for lattice constant, band-gap, electronic structure calculations. Our findings show band gap that are predicted to undergo an indirect-to-direct transition for x close to 0.125. The composition-bandgap relationships in Ge1-xSnx lattice are evaluated by a detailed comparison of bonding, electronic, structural properties. The atomic structures play a key role in the indirect-gap to direct-gap transition.
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Tsai, Bing-Hung, and 蔡秉宏. "Optical Characteristics of Ge1-xSnx alloys and Sn-based Group IV Structure for Resonant Tunneling Diode." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/72004700496434147099.

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碩士
國立臺灣大學
電子工程學研究所
100
In a recent development, tin (Sn)-based group-IV semiconductor compounds has attracted research attention for new electronic and photonic devices. The incorporation of Sn modulates the bandgap of the host IV-IV compounds, and, above a certain Sn composition, the energy band of the IV-IV compounds changes from an indirect to a direct band gap. Here, we investigate a series of Ge1-xSnx alloy with various Sn compositions up to 14% and 17% grown on Ge and Si wafer respectively using low-temperature Molecular Beam Epitaxy. To characterize band structure and optical properties of these GeSn samples, we performed spectroscopic Fourier Transform Infra-Red (FTIR), ellipsometer, and photoluminescence (PL) measurements. The Γ-to-Γ optical energy gap of Ge1-xSnx alloys can be determined by FTIR. Several critical point features, corresponding to E1, E1+Δ1, and E0’ transitions, are observed in ε1 and ε2. The positions of E1 and E1+Δ1 shift toward to lower energy as Sn composition increases. Furthermore, the optoelectronic and electronic devices can be designed for applications by those analyzed. We propose a new design of Sn-based group-IV structure for resonant tunneling diode (RTD). The proposed RTD is composed of direct-bandgap Ge1-xSnx/SiyGezSn1-y-z quantum well which can be directly grown on Si. By optimizing the composition and strain in the quantum well, a high peak-to-valley ratio of 7.69 is obtained. Those results suggest our proposed RTD design can be integrated into CMOS circuits for useful applications.
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Chen, Jia-Zhi, and 陳佳智. "Characteristics of Ge1-xSnx/Ge superlattices on Ge buffered on Si (001) wafers grown by Molecular Beam Epitaxy." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/18729908565084157900.

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碩士
國立臺灣大學
電子工程學研究所
101
We report the characteristics of Ge1-xSnx/Ge strained layer superlattices ( ) pseudomorphically grown on Ge-buffered on Si(001) wafers by molecular beam epitaxy at low temperature. The crystal quality of the Ge1-xSnx/Ge superlattices was characterized by transmission electron microscopy, atomic force microscopy, and reflection high-energy electron diffraction. The composition and strain states were analyzed by x-ray diffraction and Raman microscopy. The optical spectra were measured by Fourier transform infrared spectroscopy, Photoluminescence, and Photoreflectance to determine the lowest direct-gap transition energies. The observed blue shifts of lowest direct-gap transition energies are attributed to the quantum confinement effect and strain effect, confirmed by our theoretical results using DFT theory. In addition, we also fit the conduction band offset ratio of GeSn/Ge heterostructure by the results of the optical experiments. In this thesis, low dimensional heterostructure of newly group IV material system is investigated. Ge1-xSnx/Ge superlattices are demonstrated by technique of low temperature growth using by Molecular Beam Epitaxy, and presenting characteristics of strained Ge1-xSnx/Ge superlattices (SLs) on Si substrates with x up to 6.96 %. Move a step forward toward the low dimensional Sn-based group IV photonic devices.
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Book chapters on the topic "Ge1–xSnx"

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Mukhopadhyay, Shyamal, Bratati Mukhopadhyay, Gopa Sen, and P. K. Basu. "Calculation of Intrinsic Carrier Density of Ge1−xSnx Alloy, Its Temperature Dependence Around Room Temperature and Its Effect on Maximum Electron Mobility." In Computers and Devices for Communication, 551–56. Singapore: Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-15-8366-7_81.

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Conference papers on the topic "Ge1–xSnx"

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Zagarzusem, Khurelbaatar, Yeon-Ho Kil, Sim-Hoon Yuk, Taek Sung Kim, Zumuukhorol Munkhsaihan, Chel-Jong Choi, and Kyu-Hwan Shim. "Ge1−xSnx/Ge heterostructure infrared photodetector." In 2015 IEEE Sensors. IEEE, 2015. http://dx.doi.org/10.1109/icsens.2015.7370598.

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Hsieh, Wen-Yao, Yu-Hao You, Kun-Mao He, Yu-Hsiang Peng, Guo-En Chang, and Henry H. Cheng. "Enhanced infrared photoluminescence from Ge1-xSnx alloys." In JSAP-OSA Joint Symposia. Washington, D.C.: OSA, 2013. http://dx.doi.org/10.1364/jsap.2013.16a_d4_5.

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Broderick, Christopher A., Edmond J. O'Halloran, and Eoin P. O'Reilly. "Comparative analysis of electronic structure evolution in Ge1-xSnx and Ge1−xPbx alloys." In 2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). IEEE, 2019. http://dx.doi.org/10.1109/nusod.2019.8806886.

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Baert, Bruno, Dao Y. Nhi Truong, Osamu Nakatsuka, Shigeaki Zaima, and Ngoc Duy Nguyen. "Electrical Characterization of P-Ge1-xSnx/P-Ge and P-Ge1-xSnx/n-Ge Heterostructures by Numerical Simulation of Admittance Spectroscopy." In 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM). IEEE, 2012. http://dx.doi.org/10.1109/istdm.2012.6222503.

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Thai, Quang Minh, Mathieu Bertrand, Nicolas Pauc, Joris Aubin, Alexei Tchelnokov, Jean-Michel Hartmann, Vincent Reboud, Vincent Calvo, and Jérémie Chrétien. "Lasing in Ge1-xSnx-based photonic crystals (Conference Presentation)." In Semiconductor Lasers and Laser Dynamics, edited by Krassimir Panajotov, Marc Sciamanna, and Rainer Michalzik. SPIE, 2018. http://dx.doi.org/10.1117/12.2306951.

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Lan, H. S., and C. W. Liu. "Electron ballistic current enhancement of Ge1−xSnx FinFETs." In 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA). IEEE, 2014. http://dx.doi.org/10.1109/vlsi-tsa.2014.6839656.

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GAIDUK, P. I., A. NYLANDSTED LARSEN, and J. LUNDSGAARD HANSEN. "SEGREGATION ENHANCED Ge1-xSnx NANOCRYSTAL FORMATION ON SILICON SUBSTRATE." In Reviews and Short Notes to Nanomeeting-2005. WORLD SCIENTIFIC, 2005. http://dx.doi.org/10.1142/9789812701947_0014.

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Jeschke, Sabina, Olivier Pfeiffer, Joerg Schulze, and Marc Wilke. "Crystalline Ge1-xSnx Heterostructures in Lateral High-Speed Devices." In 2010 Fourth International Conference on Quantum, Nano and Micro Technologies (ICQNM). IEEE, 2010. http://dx.doi.org/10.1109/icqnm.2010.17.

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Claflin, Bruce B., Gordon J. Grzybowski, and Joshua M. Duran. "Growth of Ge1-xSnx Alloys for MWIR sensing applications." In International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors, edited by Guru Subramanyam, Partha Banerjee, Akhlesh Lakhtakia, and Nian X. Sun. SPIE, 2023. http://dx.doi.org/10.1117/12.2647373.

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Wang, Suyuan, Jun Zheng, Chunlai Xue, Chuanbo Li, Yuhua Zuo, Buwen Cheng, and Qiming Wang. "P+-Ge1−xSnx / p−-Ge1−x−ySixSny / n-Ge1−x−ySixSny NTFET analysis and the realization of n-Ge1−x−ySixSny ohmic contact." In 2016 16th International Workshop on Junction Technology (IWJT). IEEE, 2016. http://dx.doi.org/10.1109/iwjt.2016.7486667.

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