Journal articles: 'GaN'

1

Hess, S., R. A. Taylor, J. F. Ryan, B. Beaumont, and P. Gibart. "Optical gain in GaN epilayers." Applied Physics Letters 73, no. 2 (July 13, 1998): 199–201. http://dx.doi.org/10.1063/1.121754.

Full text

APA, Harvard, Vancouver, ISO, and other styles

2

Juršėnas, S., N. Kurilčik, G. Kurilčik, S. Miasojedovas, A. Žukauskas, T. Suski, P. Perlin, M. Leszczynski, P. Prystawko, and I. Grzegory. "Optical gain in homoepitaxial GaN." Applied Physics Letters 85, no. 6 (August 9, 2004): 952–54. http://dx.doi.org/10.1063/1.1782266.

Full text

APA, Harvard, Vancouver, ISO, and other styles

3

LI, JAMES C., DAVID M. KEOGH, SOUROBH RAYCHAUDHURI, ADAM CONWAY, DONGJIANG QIAO, and PETER M. ASBECK. "ANALYSIS OF HIGH DC CURRENT GAIN STRUCTURES FOR GaN/InGaN/GaN HBTs." International Journal of High Speed Electronics and Systems 14, no. 03 (September 2004): 825–30. http://dx.doi.org/10.1142/s0129156404002909.

Full text

Abstract:

AlGaN/GaN HBTs with DC current gains in excess of 10 have been demonstrated; however, Makimoto et al have recently obtained a DC current gain value exceeding 2000 for a GaN/InGaN/GaN triple mesa DHBT.1,2,3 The experimental demonstration of a GaN -based HBT with such extraordinary DC current gain has motivated the search for new device structures conducive to high DC current gain. Simulations in this work indicate that high DC current gain is difficult to achieve with a uniform, defect-free base layer. We also simulate the electrical characteristics of a new class of DHBT where the base layer is non-uniform. By non-uniformly thinning or perforating the base, the majority of the base would remain thick to minimize the negative impact to base resistance. However, small thinned regions achieve extremely high DC current gain, which can be used to significantly increase the overall DC current gain. This device structure could naturally occur when "V" defects form or Indium is non-uniformly distributed during the base layer growth. The sensitivity of DC current gain to the base thickness range, duty cycle, defect geometry, and defect type is also investigated.

APA, Harvard, Vancouver, ISO, and other styles

4

Kamboj, Nitin, and Mohrana Choudhary. "Impact of solid waste disposal on ground water quality near Gazipur dumping site, Delhi, India." Journal of Applied and Natural Science 5, no. 2 (December 1, 2013): 306–12. http://dx.doi.org/10.31018/jans.v5i2.322.

Full text

Abstract:

The present study was carried out to study the impact of domestic wastes disposal on ground water quality at Delhi, India. Ground water is one of the major sources of drinking water in arid and semi-arid regions. Ground water quality data and its distributions are important for the purpose of planning and management. The samples of ground water were collected and analyzed for various physico-chemical parameters viz. conductivity, total dissolved solids (TDS), alkalinity, total hardness, calcium, magnesium, chloride, sulphate, nitrate, phosphate,fluoride, sodium and potassium. Among these parameters, TDS were found higher 1400, 1068, 1524, 1656, 840, 1106, 1540, 1330, 1900, 1960, 1914, 2061 mg/l at all the Ga1,Ga2, Ga3, Ga4, Ga5, Ga6, Ga7, Ga8, Ga9, Ga10, Ga11, Ga12, Ga13, Ga14, Ga15, Ga16 sampling sites respectively. TDS were observed beyond the desirable limits of BIS at all the sampling sites. Maximum value of TDS (2061 mg/l) was found at the sampling site Ga12 while the minimum value of TDS (1061 mg/l) was found at the sampling site Ga2. Maximum value of chloride (560 mg/l) wasfound at sampling site Ga4, while the minimum value of chloride (60 mg/l) was found at sampling site Ga5 and rest all other parameters were found within permissible limit. The present study concluded that the chloride and TDS in water samples were above to the desirable limit and below to the permissible limit of BIS and rest all other parameters were within desirable limit.

APA, Harvard, Vancouver, ISO, and other styles

5

Zhang, Zi-Hui, Swee Tiam Tan, Wei Liu, Zhengang Ju, Ke Zheng, Zabu Kyaw, Yun Ji, Namig Hasanov, Xiao Wei Sun, and Hilmi Volkan Demir. "Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer." Optics Express 21, no. 4 (February 21, 2013): 4958. http://dx.doi.org/10.1364/oe.21.004958.

Full text

APA, Harvard, Vancouver, ISO, and other styles

6

Liu, Xinke, Jiaying Yang, Jian Li, Feng Lin, Bo Li, Ziyue Zhang, Wei He, and Mark Huang. "GaN-Based GAA Vertical CMOS Inverter." IEEE Journal of the Electron Devices Society 10 (2022): 224–28. http://dx.doi.org/10.1109/jeds.2022.3149932.

Full text

APA, Harvard, Vancouver, ISO, and other styles

7

Yang, Wei, Thomas Nohava, Subash Krishnankutty, Robert Torreano, Scott McPherson, and Holly Marsh. "High gain GaN/AlGaN heterojunction phototransistor." Applied Physics Letters 73, no. 7 (August 17, 1998): 978–80. http://dx.doi.org/10.1063/1.122058.

Full text

APA, Harvard, Vancouver, ISO, and other styles

8

Frankowsky, G., F. Steuber, V. Härle, F. Scholz, and A. Hangleiter. "Optical gain in GaInN/GaN heterostructures." Applied Physics Letters 68, no. 26 (June 24, 1996): 3746–48. http://dx.doi.org/10.1063/1.115993.

Full text

APA, Harvard, Vancouver, ISO, and other styles

9

Ramvall, Peter, Yoshinobu Aoyagi, Akito Kuramata, Peter Hacke, Kay Domen, and Kazuhiko Horino. "Doping-dependent optical gain in GaN." Applied Physics Letters 76, no. 21 (May 22, 2000): 2994–96. http://dx.doi.org/10.1063/1.126556.

Full text

APA, Harvard, Vancouver, ISO, and other styles

10

Garrido, J. A., E. Monroy, I. Izpura, and E. Muñoz. "Photoconductive gain modelling of GaN photodetectors." Semiconductor Science and Technology 13, no. 6 (June 1, 1998): 563–68. http://dx.doi.org/10.1088/0268-1242/13/6/005.

Full text

APA, Harvard, Vancouver, ISO, and other styles

11

Park, Youngsin, Christopher C. S. Chan, Robert A. Taylor, Nammee Kim, Yongcheol Jo, Seung W. Lee, Woochul Yang, and Hyunsik Im. "Carrier confinement effects of In Ga1-N/GaN multi quantum disks with GaN surface barriers grown in GaN nanorods." Optical Materials 78 (April 2018): 365–69. http://dx.doi.org/10.1016/j.optmat.2018.02.052.

Full text

APA, Harvard, Vancouver, ISO, and other styles

12

Zhang, Zi-Hui, Swee Tiam Tan, Wei Liu, Zhengang Ju, Ke Zheng, Zabu Kyaw, Yun Ji, Namig Hasanov, Xiao Wei Sun, and Hilmi Volkan Demir. "Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer: errata." Optics Express 21, no. 15 (July 16, 2013): 17670. http://dx.doi.org/10.1364/oe.21.017670.

Full text

APA, Harvard, Vancouver, ISO, and other styles

13

Cuaig, Seosamh Ó. "Gan Teilifís Ghaeltachta-Gan Ghaeilge." Comhar 47, no. 5 (1988): 8. http://dx.doi.org/10.2307/20556491.

Full text

APA, Harvard, Vancouver, ISO, and other styles

14

Jeong, HoeJun, SeongYeon Jeung, HyunJun Lee, and JangWoo Kwon. "BiVi-GAN: Bivariate Vibration GAN." Sensors 24, no. 6 (March 8, 2024): 1765. http://dx.doi.org/10.3390/s24061765.

Full text

Abstract:

In the domain of prognosis and health management (PHM) for rotating machinery, the criticality of ensuring equipment reliability cannot be overstated. With developments in artificial intelligence (AI) and deep learning, there have been numerous attempts to use those methodologies in PHM. However, there are challenges to applying them in practice because they require huge amounts of data. This study explores a novel approach to augment vibration data—a primary component in traditional PHM methodologies—using a specialized generative model. Recognizing the limitations of deep learning models, which often fail to capture the intrinsic physical characteristics vital for vibration analysis, we introduce the bivariate vibration generative adversarial networks (BiVi-GAN) model. BiVi-GAN incorporates elements of a physics-informed neural network (PINN), emphasizing the specific vibration characteristics of rotating machinery. We integrate two types of physical information into our model: order analysis and cross-wavelet transform, which are crucial for dissecting the vibration characteristics of such machinery. Experimental findings show the effectiveness of our proposed model. With the incorporation of physics information (PI) input and PI loss, the BiVi-GAN showed a 70% performance improvement in terms of JS divergence compared with the baseline biwavelet-GAN model. This study maintains the potential and efficacy of complementary domain-specific insights with data-driven AI models for more robust and accurate outcomes in PHM.

APA, Harvard, Vancouver, ISO, and other styles

15

Kyaw, Zabu, Zi-Hui Zhang, Wei Liu, Swee Tiam Tan, Zhen Gang Ju, Xue Liang Zhang, Yun Ji, et al. "On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes." Optics Express 22, no. 1 (January 7, 2014): 809. http://dx.doi.org/10.1364/oe.22.000809.

Full text

APA, Harvard, Vancouver, ISO, and other styles

16

Heikman, Sten, Stacia Keller, Yuan Wu, James S. Speck, Steven P. DenBaars, and Umesh K. Mishra. "Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures." Journal of Applied Physics 93, no. 12 (June 15, 2003): 10114–18. http://dx.doi.org/10.1063/1.1577222.

Full text

APA, Harvard, Vancouver, ISO, and other styles

17

FUJIKURA, Hajime. "GaN on GaN Crystals for Power Device Applications." Journal of the Institute of Electrical Engineers of Japan 137, no. 10 (2017): 685–88. http://dx.doi.org/10.1541/ieejjournal.137.685.

Full text

APA, Harvard, Vancouver, ISO, and other styles

18

Faber, Milosz, Marie-Luise Faber, Jianwei Li, Mirjam A. R. Preuss, Matthias J. Schnell, and Bernhard Dietzschold. "Dominance of a Nonpathogenic Glycoprotein Gene over a Pathogenic Glycoprotein Gene in Rabies Virus." Journal of Virology 81, no. 13 (April 25, 2007): 7041–47. http://dx.doi.org/10.1128/jvi.00357-07.

Full text

Abstract:

ABSTRACT The nonpathogenic phenotype of the live rabies virus (RV) vaccine SPBNGAN is determined by an Arg→Glu exchange at position 333 in the glycoprotein, designated GAN. We recently showed that after several passages of SPBNGAN in mice, an Asn→Lys mutation arose at position 194 of GAN, resulting in GAK, which was associated with a reversion to the pathogenic phenotype. Because an RV vaccine candidate containing two GAN genes (SPBNGAN-GAN) exhibits increased immunogenicity in vivo compared to the single-GAN construct, we tested whether the presence of two GAN genes might also enhance the probability of reversion to pathogenicity. Comparison of SPBNGAN-GAN with RVs constructed to contain either both GAN and GAK genes (SPBNGAN-GAK and SPBNGAK-GAN) or two GAK genes (SPBNGAK-GAK) showed that while SPBNGAK-GAK was pathogenic, SPBNGAN-GAN and SPBNGAN-GAK were completely nonpathogenic and SPBNGAK-GAN showed strongly reduced pathogenicity. Analysis of genomic RV RNA in mouse brain tissue revealed significantly lower virus loads in SPBNGAN-GAK- and SPBNGAK-GAN-infected brains than those detected in SPBNGAK-GAK-infected brains, indicating the dominance of the nonpathogenic phenotype determined by GAN over the GAK-associated pathogenic phenotype. Virus production and viral RNA synthesis were markedly higher in SPBNGAN-, SPBNGAK-GAN-, and SPBNGAN-GAK-infected neuroblastoma cells than in the SPBNGAK- and SPBNGAK-GAK-infected counterparts, suggesting control of GAN dominance at the level of viral RNA synthesis. These data point to the lower risk of reversion to pathogenicity of a recombinant RV carrying two identical GAN genes compared to that of an RV carrying only a single GAN gene.

APA, Harvard, Vancouver, ISO, and other styles

19

Hongtao Jiang and J. Singh. "Gain characteristics of InGaN-GaN quantum wells." IEEE Journal of Quantum Electronics 36, no. 9 (September 2000): 1058–64. http://dx.doi.org/10.1109/3.863958.

Full text

APA, Harvard, Vancouver, ISO, and other styles

20

Muñoz, E., E. Monroy, J. A. Garrido, I. Izpura, F. J. Sánchez, M. A. Sánchez-Garcı́a, E. Calleja, B. Beaumont, and P. Gibart. "Photoconductor gain mechanisms in GaN ultraviolet detectors." Applied Physics Letters 71, no. 7 (August 18, 1997): 870–72. http://dx.doi.org/10.1063/1.119673.

Full text

APA, Harvard, Vancouver, ISO, and other styles

21

Katz, O., V. Garber, B. Meyler, G. Bahir, and J. Salzman. "Gain mechanism in GaN Schottky ultraviolet detectors." Applied Physics Letters 79, no. 10 (September 3, 2001): 1417–19. http://dx.doi.org/10.1063/1.1394717.

Full text

APA, Harvard, Vancouver, ISO, and other styles

22

Schwantuschke, Dirk, Peter Bruckner, Rudiger Quay, Michael Mikulla, and Oliver Ambacher. "High-Gain Millimeter-Wave AlGaN/GaN Transistors." IEEE Transactions on Electron Devices 60, no. 10 (October 2013): 3112–18. http://dx.doi.org/10.1109/ted.2013.2272180.

Full text

APA, Harvard, Vancouver, ISO, and other styles

23

Nguyen, Duc-Phuong, N. Regnault, R. Ferreira, and G. Bastard. "Alloy effects in Ga1−xInxN/GaN heterostructures." Solid State Communications 130, no. 11 (June 2004): 751–54. http://dx.doi.org/10.1016/j.ssc.2004.03.048.

Full text

APA, Harvard, Vancouver, ISO, and other styles

24

Nakamura, Shuji. "GaN Growth Using GaN Buffer Layer." Japanese Journal of Applied Physics 30, Part 2, No. 10A (October 1, 1991): L1705—L1707. http://dx.doi.org/10.1143/jjap.30.l1705.

Full text

APA, Harvard, Vancouver, ISO, and other styles

25

Hong, M., J. Kwo, S. N. G. Chu, J. P. Mannaerts, A. R. Kortan, H. M. Ng, A. Y. Cho, K. A. Anselm, C. M. Lee, and J. I. Chyi. "Single-crystal GaN/Gd2O3/GaN heterostructure." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 20, no. 3 (2002): 1274. http://dx.doi.org/10.1116/1.1473178.

Full text

APA, Harvard, Vancouver, ISO, and other styles

26

Hiroki, Masanobu, Kazuhide Kumakura, Toshiki Makimōto, Naoki Kobayashi, and Takashi Kobayashi. "Fabrication of GaN/Alumina/GaN Structure to Reduce Dislocations in GaN." Japanese Journal of Applied Physics 43, no. 4B (April 27, 2004): 1930–33. http://dx.doi.org/10.1143/jjap.43.1930.

Full text

APA, Harvard, Vancouver, ISO, and other styles

27

Wang, Lei, M. I. Nathan, T‐H Lim, M. A. Khan, and Q. Chen. "High barrier height GaN Schottky diodes: Pt/GaN and Pd/GaN." Applied Physics Letters 68, no. 9 (February 26, 1996): 1267–69. http://dx.doi.org/10.1063/1.115948.

Full text

APA, Harvard, Vancouver, ISO, and other styles

28

Asgari, A., and S. Dashti. "Optimization of optical gain in Al Ga1−N/GaN/Al Ga1−N strained quantum well laser." Optik 123, no. 17 (September 2012): 1546–49. http://dx.doi.org/10.1016/j.ijleo.2011.09.014.

Full text

APA, Harvard, Vancouver, ISO, and other styles

29

Im, Ki-Sik, Mallem Siva Pratap Reddy, Jinseok Choi, Youngmin Hwang, Jea-Seung Roh, Sung Jin An, and Jung-Hee Lee. "Characteristics of GaN-Based Nanowire Gate-All-Around (GAA) Transistors." Journal of Nanoscience and Nanotechnology 20, no. 7 (July 1, 2020): 4282–86. http://dx.doi.org/10.1166/jnn.2020.17784.

Full text

Abstract:

We investigate the DC, C–V, and pulse performances in GaN-based nanowire gate-all-around (GAA) transistors with two kinds of geometry: one is AlGaN/GaN heterostructure with two dimensional electron gas (2DEG) channel and the other is only GaN layer without 2DEG channel. From I–V and C–V curves, the fabricated GaN nanowire GAA transistor with AlGaN layer clearly exhibits normally-on operation with negative threshold voltage (Vth) due to the existence of 2DEG channel on the trapezoidal shaped GaN nanowire. On the other hand, the GaN nanowire GAA transistor without AlGaN layer presents a positive Vth (normally-off operation) due to the absent of 2DEG channel on the triangle shaped GaN nanowire. However, both devices show the similar temperaturedependent I–V characteristics due to the combination of bulk channel and surface channel in GaN nanowire GAA channel are mostly contributed, rather than the 2DEG channel. GaN-based nanowire GAA transistors demonstrate to almost negligible current collapse phenomenon due to the perfect GAA gate structure in GaN nanowire. The proposed GaN-based nanowire GAA transistors are very promising candidate for both high power device and nano-electronics application.

APA, Harvard, Vancouver, ISO, and other styles

30

Alias, Ezzah Azimah, Muhammad Esmed Alif Samsudin, Steven DenBaars, James Speck, Shuji Nakamura, and Norzaini Zainal. "N-face GaN substrate roughening for improved performance GaN-on-GaN LED." Microelectronics International 38, no. 3 (August 23, 2021): 93–98. http://dx.doi.org/10.1108/mi-02-2021-0011.

Full text

Abstract:

Purpose This study aims to focus on roughening N-face (backside) GaN substrate prior to GaN-on-GaN light-emitting diode (LED) growth as an attempt to improve the LED performance. Design/methodology/approach The N-face of GaN substrate was roughened by three different etchants; ammonium hydroxide (NH4OH), a mixture of NH4OH and H2O2 (NH4OH: H2O2) and potassium hydroxide (KOH). Hexagonal pyramids were successfully formed on the surface when the substrate was subjected to the etching in all cases. Findings Under 30 min of etching, the highest density of pyramids was obtained by NH4OH: H2O2 etching, which was 5 × 109 cm–2. The density by KOH and NH4OH etchings was 3.6 × 109 and 5 × 108 cm–2, respectively. At standard operation of current density at 20 A/cm2, the optical power and external quantum efficiency of the LED on the roughened GaN substrate by NH4OH: H2O2 were 12.3 mW and 22%, respectively, which are higher than its counterparts. Originality/value This study demonstrated NH4OH: H2O2 is a new etchant for roughening the N-face GaN substrate. The results showed that such etchant increased the density of the pyramids on the N-face GaN substrate, which subsequently resulted in higher optical power and external quantum efficiency to the LED as compared to KOH and NH4OH.

APA, Harvard, Vancouver, ISO, and other styles

31

Ortega López, C., G. Casiano Jímenez, and M. J. Espitia. "Electronic and magnetic properties GaN/MnN/GaN and MnN/GaN/MnN interlayers." Journal of Physics: Conference Series 687 (February 2016): 012052. http://dx.doi.org/10.1088/1742-6596/687/1/012052.

Full text

APA, Harvard, Vancouver, ISO, and other styles

32

Chowdhury, Nadim, Jori Lemettinen, Qingyun Xie, Yuhao Zhang, Nitul S. Rajput, Peng Xiang, Kai Cheng, Sami Suihkonen, Han Wui Then, and Tomas Palacios. "p-Channel GaN Transistor Based on p-GaN/AlGaN/GaN on Si." IEEE Electron Device Letters 40, no. 7 (July 2019): 1036–39. http://dx.doi.org/10.1109/led.2019.2916253.

Full text

APA, Harvard, Vancouver, ISO, and other styles

33

Samsudin, M. E. A., E. A. Alias, M. Ikram Md Taib, H. Li, M. Iza, S. P. Denbaars, S. Nakamura, and N. Zainal. "Limiting factors of GaN-on-GaN LED." Semiconductor Science and Technology 36, no. 9 (August 20, 2021): 095035. http://dx.doi.org/10.1088/1361-6641/ac16c2.

Full text

APA, Harvard, Vancouver, ISO, and other styles

34

Cho, Jeongik, and Kyoungro Yoon. "Conditional Activation GAN: Improved Auxiliary Classifier GAN." IEEE Access 8 (2020): 216729–40. http://dx.doi.org/10.1109/access.2020.3041480.

Full text

APA, Harvard, Vancouver, ISO, and other styles

35

Gaska, R., J. W. Yang, A. D. Bykhovski, M. S. Shur, V. V. Kaminskii, and S. Soloviov. "Piezoresistive effect in GaN–AlN–GaN structures." Applied Physics Letters 71, no. 26 (December 29, 1997): 3817–19. http://dx.doi.org/10.1063/1.120514.

Full text

APA, Harvard, Vancouver, ISO, and other styles

36

CHU, K. K., P. C. CHAO, and J. A. WINDYKA. "STABLE HIGH POWER GaN-ON-GaN HEMT." International Journal of High Speed Electronics and Systems 14, no. 03 (September 2004): 738–44. http://dx.doi.org/10.1142/s0129156404002764.

Full text

Abstract:

High power AlGaN/GaN HEMTs on free-standing GaN substrates with excellent stability have been demonstrated for the first time. When operated at a drain bias of 50V, devices without a field plate showed a record CW output power density of 10.0W/mm at 10GHz with an associated power-added efficiency of 45%. The efficiency reaches a maximum of 58% with an output power density of 5.5W/mm under a drain bias of 25V at 10GHz. Long-term stability of device RF operation was also examined. Under ambient conditions, devices biased at 25V and driven at 3dB gain compression remained stable at least up to 1,000 hours, degrading only by 0.35dB in output power. Such results clearly demonstrate the feasibility of GaN - on - GaN HEMT as an alternative device technology to the GaN - on - SiC HEMT in supporting reliable, high performance microwave power applications.

APA, Harvard, Vancouver, ISO, and other styles

37

Krishnamoorthy, Sriram, Fatih Akyol, Pil Sung Park, and Siddharth Rajan. "Low resistance GaN/InGaN/GaN tunnel junctions." Applied Physics Letters 102, no. 11 (March 18, 2013): 113503. http://dx.doi.org/10.1063/1.4796041.

Full text

APA, Harvard, Vancouver, ISO, and other styles

38

Im, Ki-Sik, Hee-Sung Kang, Jae-Hoon Lee, Sung-Jae Chang, Sorin Cristoloveanu, Maryline Bawedin, and Jung-Hee Lee. "Characteristics of GaN and AlGaN/GaN FinFETs." Solid-State Electronics 97 (July 2014): 66–75. http://dx.doi.org/10.1016/j.sse.2014.04.033.

Full text

APA, Harvard, Vancouver, ISO, and other styles

39

Krishnamoorthy, Sriram, Digbijoy N. Nath, Fatih Akyol, Pil Sung Park, Michele Esposto, and Siddharth Rajan. "Polarization-engineered GaN/InGaN/GaN tunnel diodes." Applied Physics Letters 97, no. 20 (November 15, 2010): 203502. http://dx.doi.org/10.1063/1.3517481.

Full text

APA, Harvard, Vancouver, ISO, and other styles

40

Tonisch, K., C. Buchheim, F. Niebelschütz, A. Schober, G. Gobsch, V. Cimalla, O. Ambacher, and R. Goldhahn. "Piezoelectric actuation of (GaN/)AlGaN/GaN heterostructures." Journal of Applied Physics 104, no. 8 (October 15, 2008): 084516. http://dx.doi.org/10.1063/1.3005885.

Full text

APA, Harvard, Vancouver, ISO, and other styles

41

Binks, D. J., P. Dawson, R. A. Oliver, and D. J. Wallis. "Cubic GaN and InGaN/GaN quantum wells." Applied Physics Reviews 9, no. 4 (December 2022): 041309. http://dx.doi.org/10.1063/5.0097558.

Full text

Abstract:

LEDs based on hexagonal InGaN/GaN quantum wells are dominant technology for many lighting applications. However, their luminous efficacy for green and amber emission and at high drive currents remains limited. Growing quantum wells instead in the cubic phase is a promising alternative because, compared to hexagonal GaN, it benefits from a reduced bandgap and is free of the strong polarization fields that can reduce the radiative recombination rate. Initial attempts to grow cubic GaN in the 1990s employed molecular beam epitaxy, but now, metal-organic chemical vapor deposition can also be used. Nonetheless, high phase purity requires careful attention to growth conditions and the quantification of any unwanted hexagonal phase. In contrast to hexagonal GaN, in which threading dislocations are key, at its current state of maturity, the most important extended structural defects in cubic GaN are stacking faults. These modify the optical properties of cubic GaN films and propagate into active layers. In quantum wells and electron blocking layers, segregation of alloying elements at stacking faults has been observed, leading to the formation of quantum wires and polarized emission. This observation forms part of a developing understanding of the optical properties of cubic InGaN quantum wells, which also offer shorter recombination lifetimes than their polar hexagonal counterparts. There is also growing expertise in p-doping, including dopant activation by annealing. Overall, cubic GaN has rapidly transitioned from an academic curiosity to a real prospect for application in devices, with the potential to offer specific performance advantages compared to polar hexagonal material.

APA, Harvard, Vancouver, ISO, and other styles

42

Aurongzeb, D., D. Y. Song, G. Kipshidze, B. Yavich, L. Nyakiti, R. Lee, J. Chaudhuri, H. Temkin, and M. Holtz. "Growth of GaN Nanowires on Epitaxial GaN." Journal of Electronic Materials 37, no. 8 (May 22, 2008): 1076–81. http://dx.doi.org/10.1007/s11664-008-0483-7.

Full text

APA, Harvard, Vancouver, ISO, and other styles

43

Chen, Jinyin, Haibin Zheng, Hui Xiong, Shijing Shen, and Mengmeng Su. "MAG-GAN: Massive attack generator via GAN." Information Sciences 536 (October 2020): 67–90. http://dx.doi.org/10.1016/j.ins.2020.04.019.

Full text

APA, Harvard, Vancouver, ISO, and other styles

44

Fan, W. J., M. F. Li, T. C. Chong, and J. B. Xia. "Valence hole subbands and optical gain spectra of GaN/Ga1−xAlxN strained quantum wells." Journal of Applied Physics 80, no. 6 (September 15, 1996): 3471–78. http://dx.doi.org/10.1063/1.363217.

Full text

APA, Harvard, Vancouver, ISO, and other styles

45

Holst, J., A. Hoffmann, I. Broser, T. Frey, B. Schöttker, D. J. As, D. Schikora, and K. Lischka. "Mechanisms of Optical Gain in Cubic GaN and InGaN." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 75–80. http://dx.doi.org/10.1557/s109257830000226x.

Full text

Abstract:

The epitaxial growth of zinc-blende (cubic) GaN and InGaN on GaAs with a common cleavage plane and readily high-quality, low-cost wafers may be considered as an alternative approach for the future realization of cleaved laser cavities. To obtain detailed information about the potential of cubic GaN and InGaN for device applications we performed optical gain spectroscopy accompanied by time-integrated and time-dependent photoluminescence measurements at 2 K and 300 K. From intensity-dependent gain measurements, the identification of the gain processes was possible. For moderate excitation levels, the biexciton decay is likely to be responsible for a gain structure at 3.265 eV in cubic GaN [10]. For the highest pump intensities, the electron- hole-plasma is the dominant gain process, providing gain values up to 200 cm −1. Furthermore cubic GaN samples with different cavity lengths from 250 to 600 µm were cleaved to investigate the influence of the sample geometry on the gain mechanisms. In these samples increased gain values up to 150 cm −1 as well as lower threshold excitation densities were observed, indicating the potential of cubic GaN for device applications. The results of GaN will be compared with intensity-dependent gain measurements on InGaN samples, grown on GaAs with varying In-content. The observed gain mechanisms in cubic InGaN will be discussed in detail.

APA, Harvard, Vancouver, ISO, and other styles

46

Xie, Feng, Hai Lu, Xiangqian Xiu, Dunjun Chen, Ping Han, Rong Zhang, and Youdou Zheng. "Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate." Solid-State Electronics 57, no. 1 (March 2011): 39–42. http://dx.doi.org/10.1016/j.sse.2010.12.005.

Full text

APA, Harvard, Vancouver, ISO, and other styles

47

Vigdorovich, E. N. "Mechanism of Forming of Quantum-Size Layers of AlGaN/GaN/InGaN/GaN Layers." Proceedings of Universities. ELECTRONICS 22, no. 4 (August 2017): 322–30. http://dx.doi.org/10.24151/1561-5405-2017-22-4-322-330.

Full text

APA, Harvard, Vancouver, ISO, and other styles

48

Li, Xiangdong, Karen Geens, Nooshin Amirifar, Ming Zhao, Shuzhen You, Niels Posthuma, Hu Liang, Guido Groeseneken, and Stefaan Decoutere. "Integration of GaN analog building blocks on p-GaN wafers for GaN ICs." Journal of Semiconductors 42, no. 2 (February 1, 2021): 024103. http://dx.doi.org/10.1088/1674-4926/42/2/024103.

Full text

APA, Harvard, Vancouver, ISO, and other styles

49

Chiu, Shean-Yih, A. F. M. Anwar, and Shangli Wu. "Base Transit Time in Abrupt GaN/InGaN/GaN and AlGaN/GaN/AlGaN HBTs." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 576–81. http://dx.doi.org/10.1557/s1092578300003070.

Full text

Abstract:

Base transit time, τb , in abrupt npn GaN/InGaN/GaN and AlGaN/GaN/AlGaN double heterojunction bipolar transistors (DHBTs) is reported. Base transit time strongly depends not only on the quasi-neutral base width, but also on the low field electron mobility, μn, in the neutral base region and the effective electron velocity, Sc, at the edge of base-collector heterojunction. μn and Sc are temperature-dependent parameters. A unity gain cut-off frequency of 10.6 GHz is obtained in AlGaN/GaN/AlGaN DHBTs and 19.1 GHz in GaN/InGaN/GaN DHBTs for a neutral base width of 0.05um. It is also shown that non-stationary transport is not required to study τb for neutral base width in the range of 0.05um for GaN-based HBTs.

APA, Harvard, Vancouver, ISO, and other styles

50

Lochner, Zachary, Hee Jin Kim, Yi-Che Lee, Yun Zhang, Suk Choi, Shyh-Chiang Shen, P. Doug Yoder, Jae-Hyun Ryou, and Russell D. Dupuis. "NpN-GaN/InxGa1−xN/GaN heterojunction bipolar transistor on free-standing GaN substrate." Applied Physics Letters 99, no. 19 (November 7, 2011): 193501. http://dx.doi.org/10.1063/1.3659475.

Full text

APA, Harvard, Vancouver, ISO, and other styles

Journal articles on the topic 'GaN'

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles