To see the other types of publications on this topic, follow the link: GaN Power Devices.
Journal articles on the topic 'GaN Power Devices'
Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles
Consult the top 50 journal articles for your research on the topic 'GaN Power Devices.'
Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.
You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.
Browse journal articles on a wide variety of disciplines and organise your bibliography correctly.
1
Langpoklakpam, Catherine, An-Chen Liu, Yi-Kai Hsiao, Chun-Hsiung Lin, and Hao-Chung Kuo. "Vertical GaN MOSFET Power Devices." Micromachines 14, no. 10 (October 16, 2023): 1937. http://dx.doi.org/10.3390/mi14101937.
Full textAbstract:
Gallium nitride (GaN) possesses remarkable characteristics such as a wide bandgap, high critical electric field, robust antiradiation properties, and a high saturation velocity for high-power devices. These attributes position GaN as a pivotal material for the development of power devices. Among the various GaN-based devices, vertical GaN MOSFETs stand out for their numerous advantages over their silicon MOSFET counterparts. These advantages encompass high-power device applications. This review provides a concise overview of their significance and explores their distinctive architectures. Additionally, it delves into the advantages of vertical GaN MOSFETs and highlights their recent advancements. In conclusion, the review addresses methods to enhance the breakdown voltage of vertical GaN devices. This comprehensive perspective underscores the pivotal role of vertical GaN MOSFETs in the realm of power electronics and their continual progress.
2
CHU, K. K., P. C. CHAO, and J. A. WINDYKA. "STABLE HIGH POWER GaN-ON-GaN HEMT." International Journal of High Speed Electronics and Systems 14, no. 03 (September 2004): 738–44. http://dx.doi.org/10.1142/s0129156404002764.
Full textAbstract:
High power AlGaN/GaN HEMTs on free-standing GaN substrates with excellent stability have been demonstrated for the first time. When operated at a drain bias of 50V, devices without a field plate showed a record CW output power density of 10.0W/mm at 10GHz with an associated power-added efficiency of 45%. The efficiency reaches a maximum of 58% with an output power density of 5.5W/mm under a drain bias of 25V at 10GHz. Long-term stability of device RF operation was also examined. Under ambient conditions, devices biased at 25V and driven at 3dB gain compression remained stable at least up to 1,000 hours, degrading only by 0.35dB in output power. Such results clearly demonstrate the feasibility of GaN - on - GaN HEMT as an alternative device technology to the GaN - on - SiC HEMT in supporting reliable, high performance microwave power applications.
3
Nela, Luca, Ming Xiao, Yuhao Zhang, and Elison Matioli. "A perspective on multi-channel technology for the next-generation of GaN power devices." Applied Physics Letters 120, no. 19 (May 9, 2022): 190501. http://dx.doi.org/10.1063/5.0086978.
Full textAbstract:
The outstanding properties of Gallium Nitride (GaN) have enabled considerable improvements in the performance of power devices compared to traditional silicon technology, resulting in more efficient and highly compact power converters. GaN power technology has rapidly developed and is expected to gain a significant market share in an increasing number of applications in the coming years. However, despite the great progress, the performance of current GaN devices is still far from what the GaN material could potentially offer, and a significant reduction of the device on-resistance for a certain blocking voltage is needed. Conventional GaN high-electron-mobility-transistors are based on a single two-dimensional electron gas (2DEG) channel, whose trade-off between electron mobility and carrier density limits the minimum achievable sheet resistance. To overcome such limitations, GaN power devices including multiple, vertically stacked 2DEG channels have recently been proposed, showing much-reduced resistances and excellent voltage blocking capabilities for a wide range of voltage classes from 1 to 10 kV. Such devices resulted in unprecedented high-power figures of merit and exceeded the SiC material limit, unveiling the full potential of lateral GaN power devices. This Letter reviews the recent progress of GaN multi-channel power devices and explores the promising perspective of the multi-channel platform for future power devices.
4
Zhang, A. P., F. Ren, T. J. Anderson, C. R. Abernathy, R. K. Singh, P. H. Holloway, S. J. Pearton, D. Palmer, and G. E. McGuire. "High-Power GaN Electronic Devices." Critical Reviews in Solid State and Materials Sciences 27, no. 1 (January 2002): 1–71. http://dx.doi.org/10.1080/20014091104206.
Full text
5
Otsuka, Nobuyuki, Shuichi Nagai, Hidetoshi Ishida, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka, and Daisuke Ueda. "(Invited) GaN Power Electron Devices." ECS Transactions 41, no. 8 (December 16, 2019): 51–70. http://dx.doi.org/10.1149/1.3631486.
Full text
6
Martín-Guerrero, Teresa M., Damien Ducatteau, Carlos Camacho-Peñalosa, and Christophe Gaquière. "GaN devices for power amplifier design." International Journal of Microwave and Wireless Technologies 1, no. 2 (April 2009): 137–43. http://dx.doi.org/10.1017/s1759078709000178.
Full textAbstract:
This paper describes some aspects of the fabrication and modeling of a GaN device to be employed in a power amplifier covering one WiMAX frequency band. The work has been carried out in the frame of the TARGET's NoE work package WiSELPAS. Details concerning the AlGaN/GaN device technology and the performed linear and nonlinear measurements are provided. Since these new devices require specific nonlinear models, a procedure for selecting an appropriate simplified nonlinear model and for extracting its parameters is discussed and evaluated. The developed nonlinear model has been experimentally tested under linear and nonlinear conditions. The agreement between experimental and model-predicted performance suggests that the described model could be useful in a preliminary power amplifier design.
7
Di, Kuo, and Bingcheng Lu. "Gallium Nitride Power Devices in Magnetically Coupled Resonant Wireless Power Transfer Systems." Journal of Physics: Conference Series 2463, no. 1 (March 1, 2023): 012007. http://dx.doi.org/10.1088/1742-6596/2463/1/012007.
Full textAbstract:
Abstract The main function of power devices is to convert electrical energy through high-speed switching, such as AC/DC, high and low voltage conversion, etc. Therefore, the performance of the device directly affects the performance of the power electronic device, thereby further affecting the conversion efficiency of electrical energy. The arrival of the 5G era has greatly increased the demand for gallium nitride (GaN). The development of the wireless communication market has made GaN play a key role in many aspects of human activities. The main aim of this article is to research the application of GaN power devices in magnetically coupled resonant wireless power transfer (WPT) systems. This paper first introduces the related concepts of GaN power devices, magnetic coupling resonance and WPT, and analyzes the construction of magnetic coupling resonance WPT system in detail. Secondly, the energy transmission structure is analyzed, the system is designed and the system loss is calculated and analyzed. The system loss experiment shows that by using the output capacitor of the GaN device, the dead time is optimized, the conduction loss of the switch tube is reduced, the efficiency of the converter device is improved, and the practical application of the GaN device is provided.
8
Roberts, J., A. Mizan, and L. Yushyna. "Optimized High Power GaN Transistors." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2015, HiTEN (January 1, 2015): 000195–99. http://dx.doi.org/10.4071/hiten-session6-paper6_1.
Full textAbstract:
GaN transistors intended for use at 600–900 V and that are capable of providing of 30–100 A are being introduced this year. These devices have a substantially better switching Figure-of-Merit (FOM) than silicon power switches. Rapid market acceptance is expected leading to compound annual growth rates of 85 %. However these devices present new packaging challenges. Their high speed combined with the very high current being switched demands that very low inductance packaging must be combined with highly controlled drive circuitry. While convention, and the usually vertical power device die structure, has largely determined power transistor package formats in the past, the lateral nature of the today GaN devices requires the use of new package types. The new packages have to operate at high temperatures while providing effective heat removal, low inductance, and low series resistance. Because GaN devices are lateral they require the package metal tracks to be integrated within the on-chip tracks to carry the current away from the thin on-chip metal tracks. The new GaN devices are available in two formats: one for use in embedded modular assemblies and the other for use mounted upon conventional circuit board systems. The package intended for discrete printed circuit board (PCB) assemblies has a top side cooling option that simplifies the thermal interface to the heat sink. The paper describes the die layout including the added copper tracks. The corresponding package elements that interface directly with the surface of the die play a vital role in terms of the current handling. They also provide the interface to the external busbars that allow the package to be mounted within, or on PCB. The assembly has been subject to extensive thermal analysis and the performance of a 30 A, 650 V transistor is described.
9
Zhang, Yuhao, Ruizhe Zhang, Qihao Song, Qiang Li, and J. Liu. "(Invited) Breakthrough Avalanche and Short Circuit Robustness in Vertical GaN Power Devices." ECS Meeting Abstracts MA2022-01, no. 31 (July 7, 2022): 1307. http://dx.doi.org/10.1149/ma2022-01311307mtgabs.
Full textAbstract:
After decades of relentless efforts, GaN power devices, specifically, the lateral GaN high-electron mobility transistor (HEMT), have been commercialized in the 15-650 V classes. Owing to GaN’s competitive physical properties over Si and SiC for power electronics, GaN HEMTs allow for higher switching frequency and therefore, have already seen wide adoptions in fast chargers, wireless charging, data centers, and electrified transportation. Despite the success of lateral GaN HEMTs, a vertical device structure is usually believed to be more favorable for high-voltage, high-power devices. In the last few years, with the advent and maturity of large-diameter, low-dislocation GaN wafers on freestanding GaN substrates, a new generation of vertical GaN power devices have been developed to extend GaN’s application space beyond 650 V. Very recently, several industrial vertical GaN devices in the voltage classes of 1.2-1.7 kV have been demonstrated, which are close to commercialization. This presentation will review the key advancements in vertical GaN power devices in the past decade, with a focus on the device technologies that are being commercialized, and provide a prospective for research and development in the next decade. The devices to be covered will include two-terminal power rectifiers including the p-n diodes, Schottky barrier diodes, junction barrier Schottky diodes, and trench MIS/MOS barrier Schottky diodes. The transistors will include the trench and planar MOSFETs, current-aperture vertical electron transistors, fin-channel MOSFETs, and fin-channel JFETs. Particular emphasis will be on large-area rectifiers and transistors with a device performance superior to similarly-rated Si and SiC transistors. The newly demonstrated avalanche and short-circuit robustness in vertical GaN devices, which are lacking in lateral GaN HEMTs, as well as their underlying device physics, will also be introduced. The presentation will be concluded by a discussion of current challenges and future application spaces of vertical GaN devices, as well as emerging vertical GaN devices (e.g., superjunction) under development.
10
Zhong, Min, Ying Xi Niu, Hai Ying Cheng, Chen Xi Yan, Zhi Yuan Liu, and Dong Bo Song. "Advances for Enhanced GaN-Based HEMT Devices with p-GaN Gate." Materials Science Forum 1014 (November 2020): 75–85. http://dx.doi.org/10.4028/www.scientific.net/msf.1014.75.
Full textAbstract:
With the development of high-voltage switches and high-speed RF circuits, the enhancement mode(E-mode) AlGaN/GaN HEMTs have become a hot topic in those fields. The E-mode GaN-based HEMTs have channel current at the positive gate voltage, greatly expanding the device in low power digital circuit applications. The main methods to realize E-mode AlGaN/GaN HEMT power devices are p-GaN gate technology, recessed gate structure, fluoride ion implantation technology and Cascode structure (Cascode). In this paper, the advantage and main realizable methods of E-mode AlGaN/GaN HEMT are briefly described. The research status and problems of E-mode AlGaN/GaN HEMT devices fabricated by p-GaN gate technology are summarized. The advances of p-GaN gate technology, and focuses on how these research results can improve the power characteristics and reliability of E-mode AlGaN/GaN HEMT by optimizing device structure and improving process technology, are discussed.
11
Chowdhury, Sauvik, Zachary Stum, Zhong Da Li, Katsunori Ueno, and T. Paul Chow. "Comparison of 600V Si, SiC and GaN Power Devices." Materials Science Forum 778-780 (February 2014): 971–74. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.971.
Full textAbstract:
In this paper the DC and switching performance of 600V Si, SiC and GaN power devices using device simulation. The devices compared are Si superjunction MOSFET, Si field stop IGBT, SiC UMOSFET and GaN HEMT.
12
Zhang, Yuhao, Ruizhe Zhang, Qihao Song, Qiang Li, and J. Liu. "(Invited) Breakthrough Avalanche and Short Circuit Robustness in Vertical GaN Power Devices." ECS Transactions 108, no. 6 (May 20, 2022): 11–20. http://dx.doi.org/10.1149/10806.0011ecst.
Full textAbstract:
Power devices are highly desirable to possess excellent avalanche and short-circuit (or surge-current) robustness for numerous power electronics applications like automotive powertrains, electric grids, motor drives, among many others. Current commercial GaN power device, the lateral GaN high-electron-mobility transistor (HEMT), is known to have no avalanche capability and very limited short-circuit robustness. These limitations have become a roadblock for penetration of GaN devices in many industrial power applications. Recently, through collaborations with NexGen Power Systems (NexGen), Inc., we have demonstrated breakthrough avalanche, surge-current and short-circuit robustness in NexGen’s vertical GaN p-n diodes and fin-shape junction-gate field-effect-transistors (Fin-JFETs). These large-area GaN diodes and Fin-JFETs were manufactured in NexGen’s 100 mm GaN-on-GaN fab. The demonstrated avalanche, surge-current and short-circuit capabilities are comparable or even superior to Si and SiC power devices. Additionally, vertical GaN Fin-JFETs were found to fail to open-circuit under avalanche and short-circuit conditions, which is highly desirable for the system safety. This talk reviews the key robustness results of vertical GaN power devices and unveils the enabling device physics. Fundamentally, these results signify that, in contrast to some popular belief, GaN devices with appropriate designs can achieve excellent robustness and thereby encounter no barriers for applications in electric vehicles, grids, renewable processing, and industrial motor drives.
13
Bockowski, Michal. "(Invited) Towards GaN-on-GaN High-Power Electronic Devices." ECS Meeting Abstracts MA2023-02, no. 32 (December 22, 2023): 1576. http://dx.doi.org/10.1149/ma2023-02321576mtgabs.
Full textAbstract:
Application of gallium nitride (GaN) substrates in electronic and optoelectronic industries is constantly increasing. In order to fabricate wafers, GaN crystals of the highest structural quality and desired electrical (and sometimes optical) properties must be grown. Today, there are three main GaN crystallization methods: i/ halide vapor phase epitaxy (HVPE) with its derivatives: halide-free VPE and oxide VPE; ii/ sodium-flux; and iii/ ammonothermal. The last approach can be basic or acidic depending on what mineralizer is used to increase the solubility of GaN in the feedstock zone. In this paper we will focus on HVPE and basic ammonothermal growth of GaN [1]. Not only bulk growth will be presented. The HVPE method will also be discussed as the best method to crystallize the drift layers necessary for high-power vertical electronic devices (FET transistors, Schottky diodes). One of the best methods for introducing dopants into semiconductors is ion implantation. The introduced structural damage can be removed by a proper annealing process. The high-temperature treatment enables also electrical and/or optical activation of the implanted dopants. In the case of GaN, annealing at high temperature (~1300°C - 1400°C) seems difficult. This compound loses its thermodynamic stability slightly above 800°C at atmospheric pressure. At higher temperature the crystal will decompose. One of the solutions is to anneal GaN at high nitrogen (N2) pressure. Such technology is called ultra-high-pressure annealing (UHPA) [2]. In this paper, application of UHPA for GaN crystals and layers implanted by different ions (acceptors and donors) will be presented. The latest results of the implantation with magnesium (Mg), beryllium (Be), zinc (Zn), and calcium (Ca) ions into GaN in order to obtain p-type conductivity will be discussed [3,4]. Silicon (Si) implantation into GaN for n-type doping will also be analyzed. Structural, electrical and optical properties of implanted GaN after UHPA will be discussed in terms of application for GaN-based devices. A kV class, low ON-resistance, vertical GaN junction barrier Schottky (JBS) diode with selective-area p-regions formed via Mg implantation followed by high-temperature, ultra-high pressure post-implantation activation anneal without a capping layer was already demonstrated [5]. The forward characteristics of the JBS diode showed ideality factor (n) 1.03, turn-on voltage (VON) 0.75 V, current ON/OFF ratio (at ±3 V) ~1011, and specific differential ON-resistance (RON) 0.6 mΩ·cm2. The breakdown voltage of the JBS diode was 915 V.
14
UEDA, Tetsuzo, Satoshi NAKAZAWA, Tomohiro MURATA, Hidetoshi ISHIDA, Kaoru INOUE, Tsuyoshi TANAKA, and Daisuke UEDA. "Polarization Engineering in GaN Power Devices." Journal of the Vacuum Society of Japan 54, no. 6 (2011): 393–97. http://dx.doi.org/10.3131/jvsj2.54.393.
Full text
15
Kachi, Tetsu. "Current status of GaN power devices." IEICE Electronics Express 10, no. 21 (2013): 20132005. http://dx.doi.org/10.1587/elex.10.20132005.
Full text
16
Chow, T. P., V. Khemka, J. Fedison, N. Ramungul, K. Matocha, Y. Tang, and R. J. Gutmann. "SiC and GaN bipolar power devices." Solid-State Electronics 44, no. 2 (February 2000): 277–301. http://dx.doi.org/10.1016/s0038-1101(99)00235-x.
Full text
17
UEDA, TETSUZO, YASUHIRO UEMOTO, TSUYOSHI TANAKA, and DAISUKE UEDA. "GaN TRANSISTORS FOR POWER SWITCHING AND MILLIMETER-WAVE APPLICATIONS." International Journal of High Speed Electronics and Systems 19, no. 01 (March 2009): 145–52. http://dx.doi.org/10.1142/s0129156409006199.
Full textAbstract:
We review our state-of-the-art GaN -based device technologies for power switching at low frequencies and for future millimeter-wave communication systems. These two applications are emerging in addition to the power amplifiers at microwave frequencies which have been already commercialized for cellular base stations. Technical issues of the power switching GaN device include lowering the fabrication cost, normally-off operation and further increase of the breakdown voltages extracting full potential of GaN -based materials. We establish flat and crack-free epitaxial growth of GaN on Si which can reduce the chip cost. Our novel device structure called Gate Injection Transistor (GIT) achieves normally-off operation with high enough drain current utilizing conductivity modulation. Here we also present the world highest breakdown voltage of 10400V in AlGaN / GaN HFETs. In this paper, we also present high frequency GaN -based devices for millimeter-wave applications. Short-gate MIS-HFETs using in-situ SiN as gate insulators achieve high fmax up to 203GHz. Successful integration of low-loss microstrip lines with via-holes onto sapphire enables compact 3-stage K -band amplifier MMIC of which the small-signal gain is as high as 22dB at 26GHz. The presented devices are promising for the two future emerging applications demonstrating high enough potential of GaN -based transistors.
18
Rodriguez, Jose A., Tsz Tsoi, David Graves, and Stephen B. Bayne. "Evaluation of GaN HEMTs in H3TRB Reliability Testing." Electronics 11, no. 10 (May 11, 2022): 1532. http://dx.doi.org/10.3390/electronics11101532.
Full textAbstract:
Gallium Nitride (GaN) power devices can offer better switching performance and higher efficiency than Silicon Carbide (SiC) and Silicon (Si) devices in power electronics applications. GaN has extensively been incorporated in electric vehicle charging stations and power supplies, subjected to harsh environmental conditions. Many reliability studies evaluate GaN power devices through thermal stresses during current conduction or pulsing, with a few focusing on high blocking voltage and high humidity. This paper compares GaN-on-Si High-Electron-Mobility Transistors (HEMT) device characteristics under a High Humidity, High Temperature, Reverse Bias (H3TRB) Test. Twenty-one devices from three manufacturers were subjected to 85 °C and 85% relative humidity while blocking 80% of their voltage rating. Devices from two manufacturers utilize a cascade configuration with a silicon metal-oxide-semiconductor field-effect transistor (MOSFET), while the devices from the third manufacturer are lateral p-GaN HEMTs. Through characterization, three sample devices have exhibited degraded blocking voltage capability. The results of the H3TRB test and potential causes of the failure mode are discussed.
19
Liu, An-Chen, Po-Tsung Tu, Catherine Langpoklakpam, Yu-Wen Huang, Ya-Ting Chang, An-Jye Tzou, Lung-Hsing Hsu, Chun-Hsiung Lin, Hao-Chung Kuo, and Edward Yi Chang. "The Evolution of Manufacturing Technology for GaN Electronic Devices." Micromachines 12, no. 7 (June 23, 2021): 737. http://dx.doi.org/10.3390/mi12070737.
Full textAbstract:
GaN has been widely used to develop devices for high-power and high-frequency applications owing to its higher breakdown voltage and high electron saturation velocity. The GaN HEMT radio frequency (RF) power amplifier is the first commercialized product which is fabricated using the conventional Au-based III–V device manufacturing process. In recent years, owing to the increased applications in power electronics, and expanded applications in RF and millimeter-wave (mmW) power amplifiers for 5G mobile communications, the development of high-volume production techniques derived from CMOS technology for GaN electronic devices has become highly demanded. In this article, we will review the history and principles of each unit process for conventional HEMT technology with Au-based metallization schemes, including epitaxy, ohmic contact, and Schottky metal gate technology. The evolution and status of CMOS-compatible Au-less process technology will then be described and discussed. In particular, novel process techniques such as regrown ohmic layers and metal–insulator–semiconductor (MIS) gates are illustrated. New enhancement-mode device technology based on the p-GaN gate is also reviewed. The vertical GaN device is a new direction of development for devices used in high-power applications, and we will also highlight the key features of such kind of device technology.
20
Shi, Junyu. "A deep dive into SiC and GaN power devices: Advances and prospects." Applied and Computational Engineering 23, no. 1 (November 7, 2023): 230–37. http://dx.doi.org/10.54254/2755-2721/23/20230660.
Full textAbstract:
The development of GaN and SiC devices has been the subject of intensive research in recent years, and significant progress has been made in terms of device performance, reliability, and cost-effectiveness. However, there are still challenges to be overcome before these materials can become mainstream in power electronics. This review paper compares the properties and performance of SiC and GaN power devices, which are both wide-bandgap semiconductors that offer superior performance compared to traditional silicon-based devices. The paper discusses the material properties of SiC and GaN, including their bandgaps, thermal conductivities, breakdown voltages, and on-state resistances. The paper also compares the switching speeds and costs of SiC and GaN devices, as well as the manufacturing technologies used for these devices. The paper concludes that SiC devices are generally more suitable for high-temperature and high-voltage applications, while GaN devices are more suitable for high-frequency and high-power density applications. The review paper provides insights into the advantages and disadvantages of SiC and GaN power devices and highlights areas for future research.
21
Zaidan, Zahraa, Nedal Al Taradeh, Mohammed Benjelloun, Christophe Rodriguez, Ali Soltani, Josiane Tasselli, Karine Isoird, et al. "A Novel Isolation Approach for GaN-Based Power Integrated Devices." Micromachines 15, no. 10 (September 30, 2024): 1223. http://dx.doi.org/10.3390/mi15101223.
Full textAbstract:
This paper introduces a novel technology for the monolithic integration of GaN-based vertical and lateral devices. This approach is groundbreaking as it facilitates the drive of high-power GaN vertical switching devices through lateral GaN HEMTs with minimal losses and enhanced stability. A significant challenge in this technology is ensuring electrical isolation between the two types of devices. We propose a new isolation method designed to prevent any degradation of the lateral transistor’s performance. Specifically, high voltage applied to the drain of the vertical GaN power FinFET can adversely affect the lateral GaN HEMT’s performance, leading to a shift in the threshold voltage and potentially compromising device stability and driver performance. To address this issue, we introduce a highly doped n+ GaN layer positioned between the epitaxial layers of the two devices. This approach is validated using the TCAD-Sentaurus simulator, demonstrating that the n+ GaN layer effectively blocks the vertical electric field and prevents any depletion or enhancement of the 2D electron gas (2DEG) in the lateral GaN HEMT. To our knowledge, this represents the first publication of such an innovative isolation strategy between vertical and lateral GaN devices.
22
McCarthy, L. S., N.-Q. Zhang, H. Xing, B. Moran, S. DenBaars, and U. K. Mishra. "High Voltage AlGaN/GaN Heterojunction Transistors." International Journal of High Speed Electronics and Systems 14, no. 01 (March 2004): 225–43. http://dx.doi.org/10.1142/s0129156404002314.
Full textAbstract:
The use of AlGaN / GaN HEMTs and HBTs for switching power supplies is explored. With its high electron velocities and breakdown fields, GaN has great potential for power switching. The field-plate HEMT increased breakdown voltages by 20% to 570V by reducing the peak field at the drain-side edge of the gate. The use of a gate insulator is also investigated, using both JVD SiO 2 and e-beam evaporated SiO 2 to reduce gate leakage, increasing breakdown voltages to 1050V and 1300V respectively. The power device figure of merit (FOM) for these devices: [Formula: see text], is the highest reported for switching devices. To reduce trapping effects, reactively sputtered SiN x, is used as a passivant, resulting in a switching time of less than 30 ns for devices blocking over 110V with a drain current of 1.4A under resistive load conditions. Dynamic load results are also presented. The development of HBTs for switching applications included the development of an etched emitter HBT with a selectively regrown extrinsic base. This was later improved upon with the selectively regrown emitter devices with current gains as high as 15. To improve breakdown in these devices, thick GaN layers were grown, reducing threading dislocation densities in the active layers. A further improvement included the use of a bevelled shallow etch and a lateral collector design to maximize device breakdown.
23
Vobecký, Jan. "The current status of power semiconductors." Facta universitatis - series: Electronics and Energetics 28, no. 2 (2015): 193–203. http://dx.doi.org/10.2298/fuee1502193v.
Full textAbstract:
Trends in the design and technology of power semiconductor devices are discussed on the threshold of the year 2015. Well established silicon technologies continue to occupy most of applications thanks to the maturity of switches like MOSFET, IGBT, IGCT and PCT. Silicon carbide (SiC) and gallium nitride (GaN) are striving to take over that of the silicon. The most relevant SiC device is the MPS (JBS) diode, followed by MOSFET and JFET. GaN devices are represented by lateral HEMT. While the long term reliability of silicon devices is well trusted, the SiC MOSFETs and GaN HEMTs are struggling to achieve a similar confidence. Two order higher cost of SiC equivalent functional performance at device level limits their application to specific cases, but their number is growing. Next five years will therefore see the co-existence of these technologies. Silicon will continue to occupy most of applications and dominate the high-power sector. The wide bandgap devices will expand mainly in the 600 - 1200 V range and dominate the research regardless of the voltage class.
24
Wu, Nengtao, Zhiheng Xing, Shanjie Li, Ling Luo, Fanyi Zeng, and Guoqiang Li. "GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices." Semiconductor Science and Technology 38, no. 6 (April 25, 2023): 063002. http://dx.doi.org/10.1088/1361-6641/acca9d.
Full textAbstract:
Abstract Conventional silicon (Si)-based power devices face physical limitations—such as switching speed and energy efficiency—which can make it difficult to meet the increasing demand for high-power, low-loss, and fast-switching-frequency power devices in power electronic converter systems. Gallium nitride (GaN) is an excellent candidate for next-generation power devices, capable of improving the conversion efficiency of power systems owing to its wide band gap, high mobility, and high electric breakdown field. Apart from their cost effectiveness, GaN-based power high-electron-mobility transistors (HEMTs) on Si substrates exhibit excellent properties—such as low ON-resistance and fast switching—and are used primarily in power electronic applications in the fields of consumer electronics, new energy vehicles, and rail transit, amongst others. During the past decade, GaN-on-Si power HEMTs have made major breakthroughs in the development of GaN-based materials and device fabrication. However, the fabrication of GaN-based HEMTs on Si substrates faces various problems—for example, large lattice and thermal mismatches, as well as ‘melt-back etching’ at high temperatures between GaN and Si, and buffer/surface trapping induced leakage current and current collapse. These problems can lead to difficulties in both material growth and device fabrication. In this review, we focused on the current status and progress of GaN-on-Si power HEMTs in terms of both materials and devices. For the materials, we discuss the epitaxial growth of both a complete multilayer HEMT structure, and each functional layer of a HEMT structure on a Si substrate. For the devices, breakthroughs in critical fabrication technology and the related performances of GaN-based power HEMTs are discussed, and the latest development in GaN-based HEMTs are summarised. Based on recent progress, we speculate on the prospects for further development of GaN-based power HEMTs on Si. This review provides a comprehensive understanding of GaN-based HEMTs on Si, aiming to highlight its development in the fields of microelectronics and integrated circuit technology.
25
Zhang, Wenli, Zhengyang Liu, Fred Lee, Shuojie She, Xiucheng Huang, and Qiang Li. "A Gallium Nitride-Based Power Module for Totem-Pole Bridgeless Power Factor Correction Rectifier." International Symposium on Microelectronics 2015, no. 1 (October 1, 2015): 000324–29. http://dx.doi.org/10.4071/isom-2015-wp11.
Full textAbstract:
The totem-pole bridgeless power factor correction (PFC) rectifier has recently gained popularity for ac-dc power conversion. The emerging gallium nitride (GaN) high-electron-mobility transistor (HEMT), having a small body diode reverse recovery effect and low switching loss, is a promising device for use in the totem-pole approach. The design, fabrication, and thermal analysis of a GaN-based full-bridge multi-chip module (MCM) for totem-pole bridgeless PFC rectifier are introduced in this work. Four cascode GaN devices using the same pair of high-voltage GaN HEMT and low-voltage silicon (Si) power metal-oxide-semiconductor field-effect transistor (MOSFET) chips, as used in the discrete TO-220 package, were integrated onto one aluminum nitride direct-bonded-copper (AlN-DBC) substrate in a newly designed MCM. This integrated power module achieves the same function as four discrete devices mounted on the circuit board. In this module design, the Si and GaN bare die were arranged in a stack-die format for each cascode device to eliminate the critical common source inductance, and thus to reduce parasitic ringing at turn-off transients. In addition, an extra capacitor was added in parallel with the drain-source terminals of the Si MOSFET in each cascode GaN device to compensate for the mismatched junction capacitance between the Si MOSFET and GaN HEMT, which could accomplish the internal zero-voltage switching of the GaN device and reduce its turn-on loss. The AlN-DBC substrate and the flip-chip format were also applied in the module design. This GaN-based MCM shows an improved heat dissipation capability based on the thermal analysis and comparison with the discrete GaN device. The totem-pole bridgeless PFC rectifier built using this integrated power module is expected to have a peak efficiency of higher than 99% with a projected power density greater than 400 W/in3.
26
Waltereit, Patrick, Wolfgang Bronner, Rüdiger Quay, Michael Dammann, Rudolf Kiefer, Wilfried Pletschen, Stefan Müller, et al. "AlGaN/GaN epitaxy and technology." International Journal of Microwave and Wireless Technologies 2, no. 1 (February 2010): 3–11. http://dx.doi.org/10.1017/s175907871000005x.
Full textAbstract:
We present an overview on epitaxial growth, processing technology, device performance, and reliability of our GaN high electron mobility transistors (HEMTs) manufactured on 3- and 4-in. SiC substrates. Epitaxy and processing are optimized for both performance and reliability. We use three different gate lengths, namely 500 nm for 1–6 GHz applications, 250 nm for devices between 6 and 18 GHz, and 150 nm for higher frequencies. The developed HEMTs demonstrate excellent high-voltage stability, high power performance, and large DC to RF conversion efficiencies for all gate lengths. On large gate width devices for base station applications, an output power beyond 125 W is achieved with a power added efficiency around 60% and a linear gain around 16 dB. Reliability is tested both under DC and RF conditions with supply voltage of 50 and 30 V for 500 and 250 nm gates, respectively. DC tests on HEMT devices return a drain current change of just about 10% under IDQ conditions. Under RF stress the observed change in output power density is below 0.2 dB after more than 1000 h for both gate length technologies.
27
Loong, Ling Jin, Chockalingam Aravind Vaithilingam, Gowthamraj Rajendran, and Venkatkumar Muneeswaran. "Modelling and analysis of vienna rectifier for more electric aircraft applications using wide band-gap materials." Journal of Physics: Conference Series 2120, no. 1 (December 1, 2021): 012027. http://dx.doi.org/10.1088/1742-6596/2120/1/012027.
Full textAbstract:
Abstract This paper presents a comprehensive study on the switching effects of wide bandgap devices and the importance of power electronics in an aircraft application. Silicon (Si), silicon carbide (SiC), and gallium nitride (GaN) are wide bandgap devices that act as a power electronic switch in the AC-DC converter for More Electric Aircraft (MEA) applications. Therefore, it is important to observe their converting efficiency to identify the most suitable wide bandgap device among three devices for AC-DC converters in aircraft applications to provide high efficiency and high-power density. In this study, the characteristics of Si, SIC, and GaN devices are simulated using PSIM software. Also, this paper presents the performance of the Vienna rectifier for aircraft application. The Vienna rectifier using Si, SiC, and GaN devices are simulated using PSIM software for aircraft application. GaN with Vienna rectifier provides better performance than Si and SiC devices for aircraft applications among the three devices. It gives high efficiency, high power density, low input current THD to meet IEEE-519 standard, and high-power factor at mains.
28
Kitchen, Jennifer, Soroush Moallemi, and Sumit Bhardwaj. "Multi-chip module integration of Hybrid Silicon CMOS and GaN Technologies for RF Transceivers." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2019, DPC (January 1, 2019): 000339–82. http://dx.doi.org/10.4071/2380-4491-2019-dpc-presentation_tp1_010.
Full textAbstract:
Digital transceiver architectures offer the potential for achieving wireless hardware flexibility to frequency and modulation scheme for future-generation communications systems. Additionally, digital transmitters lend themselves to the use of switch-mode power amplifiers, which can have significantly higher efficiency than their linear counterparts. Two proposed architectures for realizing digital transmitters will be described in this work, both of which employ a hybrid combination of silicon integrated circuits (IC) and a power technology (e.g. GaN). This hybrid architecture takes advantage of the silicon to implement the high-complexity signal processing required for wireless communications, and uses power devices with high power density and low parasitic capacitance to sufficiently amplify the RF signals for transmission. Unfortunately, interfacing the low-power RF switching signals with off-chip high-power devices poses numerous design challenges, including: generation of integrated silicon power drivers with sufficient voltage swing for controlling power devices such as GaN, mitigation of on-chip current transients, wideband assembly interface from the silicon IC to the power device, and full system design verification using multiple process technologies. This work presents two CMOS driver architectures that can be used to interface low-power CMOS processing circuits with off-chip high-power devices. This work also details the performance limitations when assembling and interfacing multiple process technologies that are not co-located on the same IC. The main function of the driver circuitry within the digital transceiver system is to interface the low-power digital modulator to a large, high capacitance, off-chip power device. The driver must provide adequate transient current to charge/discharge the off-chip power devices' input capacitance through parasitic routing. Furthermore, the driver is designed to exhibit rise/fall times of less than 5% of the switching period and low jitter to meet RF signal quality requirements. Since silicon process technologies typically have much lower voltage breakdowns than those required to drive a power devie (e.g. GaN device), special driver architectures must be implemented to ensure the CMOS devices never exceed their breakdown voltages. Two architectures were implemented within this work to simultaneously achieve RF switching speeds and 5V signal swing from a 0.9V silicon CMOS process technology. The two architectures are: 1) a House-of-Cards configuration, and 2) a Cascode topology. These architectures will be detailed and compared with respect to performance in this presentation. Two of the most common techniques to assemble and connect a silicon IC, which includes the driver circuitry, and a (GaN) power device are: 1) direct wire bonding or flip-chip connection from the IC to the GaN, and 2) connection through a board or package interface circuit. Since most high-performance RF power devices such as GaN have negative threshold voltage, the driver (CMOS) IC must either: 1) have a supply and ground that are shifted to negative voltage values, or 2) decouple the IC's output from the GaN device's input in order to properly control the GaN. Off-chip decoupling is more easily implemented, but may limit maximum operating frequencies due to the added interface network and board/module parasitics. This work shall detail the interface models and compare the assembly procedures and potential performance limits when using both of these most common assembly techniques.
29
Carlson, Eric P., Daniel W. Cunningham, Yan Zhi Xu, and Isik C. Kizilyalli. "Power Electronic Devices and Systems Based on Bulk GaN Substrates." Materials Science Forum 924 (June 2018): 799–804. http://dx.doi.org/10.4028/www.scientific.net/msf.924.799.
Full textAbstract:
Wide-bandgap power semiconductor devices offer enormous energy efficiency gains in a wide range of potential applications. As silicon-based semiconductors are fast approaching their performance limits for high power requirements, wide-bandgap semiconductors such as gallium nitride (GaN) and silicon carbide (SiC) with their superior electrical properties are likely candidates to replace silicon in the near future. Along with higher blocking voltages wide-bandgap semiconductors offer breakthrough relative circuit performance enabling low losses, high switching frequencies, and high temperature operation. ARPA-E’s SWITCHES program, started in 2014, set out to catalyze the development of vertical GaN devices using innovations in materials and device architectures to achieve three key aggressive targets: 1200V breakdown voltage (BV), 100A single-die diode and transistor current, and a packaged device cost of no more than ȼ10/A. The program is drawing to a close by the end of 2017 and while no individual project has yet to achieve all the targets of the program, they have made tremendous advances and technical breakthroughs in vertical device architecture and materials development. GaN crystals have been grown by the ammonothermal technique and 2-inch GaN wafers have been fabricated from them. Near theoretical, high-voltage (1700-4000V) and high current (up to 400A pulsed) vertical GaN diodes have been demonstrated along with innovative vertical GaN transistor structures capable of high voltage (800-1500V) and low RON (0.36-2.6 mΩ-cm2). The challenge of selective area doping, needed in order to move to higher voltage transistor devices has been identified. Furthermore, a roadmap has been developed that will allow high voltage/current vertical GaN devices to reach ȼ5/A to ȼ7/A, realizing functional cost parity with high voltage silicon power transistors.
30
Hikita, Masahiro, Hiroaki Ueno, Hisayoshi Matsuo, Tetsuzo Ueda, Yasuhiro Uemoto, Kaoru Inoue, Tsuyoshi Tanaka, and Daisuke Ueda. "Status of GaN-Based Power Switching Devices." Materials Science Forum 600-603 (September 2008): 1257–62. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.1257.
Full textAbstract:
State-of-the-art technologies of GaN-based power switching transistors are reviewed, in which normally-off operation and heat spreading as technical issues. We demonstrate a new operation principle of GaN-based normally-off transistor called Gate Injection Transistor (GIT). The GIT utilizes hole-injection from p-AlGaN to AlGaN/GaN hetero-junction which increases electron density in the depleted channel resulting in dramatic increase of the drain current owing to conductivity modulation. The fabricated GIT on Si substrate exhibits the threshold voltage of +1.0V with high maximum drain current of 200mA/mm. The obtained on-state resistance (Ron·A) and off-state breakdown voltage (BVds) are 2.6mΩ·cm2 and 800V, respectively. These values are the best ones ever reported for GaN-based normally-off transistors. In addition, we propose the use of poly-AlN as surface passivation. The AlN has at least 200 times higher thermal conductivity than conventional SiN so that it can effectively reduce the channel temperature.
31
Neufeld, Carl, Geetak Gupta, Philip Zuk, and Likun Shen. "(Invited) Advances in High Power, High Voltage, Reliable GaN Products for Multi Kilo-Watt Power Conversion Applications." ECS Meeting Abstracts MA2022-02, no. 37 (October 9, 2022): 1345. http://dx.doi.org/10.1149/ma2022-02371345mtgabs.
Full textAbstract:
Gallium Nitride has been proven to be a superior material system for high performance, reliable, high power transistors enabling high efficiency in power conversion applications [1,2]. In this paper we highlight some recent advances in GaN technology which expand the capabilities and applications of GaN power switches. Transphorm, Inc, is a pioneer and leader in GaN power electronics with a wide product portfolio of products spanning <100W to >10kW applications with JEDEC and AEC-Q101 qualified products including qualified 650V and 900V products (Fig. 1), as well as demonstrated 1200V devices in development. Transphorm’s vertical integration allows for control over device design, GaN epitaxial growth, and device fabrication resulting in industry leading performance and reliability. Transphorm’s breadth of volume production applications from 45 W through 10 kW is in part due to its impressive Failure in Time (FIT) rate of < 0.3 failures per billion hours is based on Field Reliability Data collected over 40 billion hours.[3] Transphorm’s normally-off devices are built by combining a state-of-the-art high voltage (HV) GaN HEMT with a low voltage (LV) Silicon MOSFET into a cascode GaN FET configuration to offer superior reliability, performance, and ease of use. The LV Si MOSFET features low gate charge and high threshold voltage which makes for a very easy to drive switch with a large gate voltage drive margin and the HV GaN HEMT offers high performance due to the superior material and transport properties of GaN combining the best of both materials. The latest GenV 15 mΩ 650V SuperGaN® FET (TP65H015G5WS) is the lowest Ron packaged GaN FET in the market enabling >10kW output powers with a single switch [4]. Inductive switching waveforms in a half-bridge at 400 V/65 A for the SuperGaN FET and SiC MOSFET were compared (Fig. 2) and the GaN device delivered current and voltage switching speeds of 4 kA/μs and 60 kV/μs which is about 2x faster than that of the SiC MOSFET, resulting in a 50% reduction in switching loss. To assess the performance of the SuperGaN FET vs similarly rated SiC MOSFETs and SiC JFETs, the devices were configured into a 240V:400V boost converter operating at 70kHz (Fig. 3). The GaN FET based boost converter was able to operate up to 12kW of output power with a maximum junction temperature of just 139 oC while the SIC MOSFET and JFET boost converters were limited 11kW and 9.2kW respectively due to junction temperature reaching 165oC. At 9.2Wk output power, the SuperGaN FET power loss was 38% and 21% lower than the loss in the SiC JFET and SiC MOSFET respectively. This combination of lower temperature and higher output power demonstrates the importance of the high efficiency of the SuperGaN FET. The unparalleled efficiency of Transphorm’s SuperGaN FETs has enabled to the development of unique products such as a 3KVA datacenter UPS released by and industry leading supplier, which is the smallest, lightest, and most powerful 3KA datacenter UPS on the market with 93.3% peak efficiency and 2.5x higher power density which enabled the form factor to shrink form a 2U to 1U enclosure. Until recently, commercial GaN power electronic devices have only available up to 650V with Transphorm’s qualified 900V GaN FET (TP90H050WS) device being the exception. We have recently announced a breakthrough in GaN technology with the demonstration of a 1200V, 70mΩ lateral GaN FET in a TO-247 package The 1200V GaN FET achieved > 99% peak efficiency in a 450V:900V synchronous boost converter operating at 50kHz which is similar to the peak efficiency of our 650V Gen IV and Gen V products. Additionally, the 1200V GaN FET achieved higher efficiency than a similarly rated state-of-the-art 1200V SIC MOSFET in a 900V:450V buck converter at 100kHz and 5.5kW (Fig 4) demonstrating GaN can excel in 1200V applications [5]. [1] Y.F. Wu, J. Gritters, L. Shen, R.P. Smith, J. McKay, R. Barr, R. Birkhahn, “Performance and robustness of first generation 600-V GaN-on-Si power transistors”, The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, 6-10, Oct, 2013. [2] Parikh, Y.F. Wu, L.K. Shen, "Commercialization of High 600V GaN-on-Silicon Power Devices", Materials Science Forum, Vols. 778-780, pp. 1174-1179, October 2014. [3] https://www.transphormusa.com/en/gan-technology/#quality-reliability [4] C. J. Neufeld, Y.-F. Wu, S. Wienecke, R.P. Smith, Y. Huang, M. Kamiyama, J. Ikeda, T. Hosoda,B. Swenson and R. Birkhahn, “650V/780A GaN Power HEMT Enabling 10kW-Class High-efficiency Power Conversion”, IEEE 8th Workshop on Wide Bandgap Power Devices and Applications, 7-11 Nov. 2021. [5] Gupta, et al. IEEE International Symposium on Power Semiconductor Devices 2022 (accepted for publication) Figure 1
32
Oka, Tohru. "Recent development of vertical GaN power devices." Japanese Journal of Applied Physics 58, SB (April 1, 2019): SB0805. http://dx.doi.org/10.7567/1347-4065/ab02e7.
Full text
33
Peart, Matthew R., Damir Borovac, Wei Sun, Renbo Song, Nelson Tansu, and Jonathan J. Wierer. "AlInN/GaN diodes for power electronic devices." Applied Physics Express 13, no. 9 (September 1, 2020): 091006. http://dx.doi.org/10.35848/1882-0786/abb180.
Full text
34
Mishra, U. K., Shen Likun, T. E. Kazior, and Yi-Feng Wu. "GaN-Based RF Power Devices and Amplifiers." Proceedings of the IEEE 96, no. 2 (February 2008): 287–305. http://dx.doi.org/10.1109/jproc.2007.911060.
Full text
35
Asif Khan, M., Q. Chen, Michael S. Shur, B. T. Dermott, J. A. Higgins, J. Burm, W. J. Schaff, and L. F. Eastman. "GaN based heterostructure for high power devices." Solid-State Electronics 41, no. 10 (October 1997): 1555–59. http://dx.doi.org/10.1016/s0038-1101(97)00104-4.
Full text
36
Trew, R. J., M. W. Shin, and V. Gatto. "High power applications for GaN-based devices." Solid-State Electronics 41, no. 10 (October 1997): 1561–67. http://dx.doi.org/10.1016/s0038-1101(97)00105-6.
Full text
37
Chow, T. Paul. "High-voltage SiC and GaN power devices." Microelectronic Engineering 83, no. 1 (January 2006): 112–22. http://dx.doi.org/10.1016/j.mee.2005.10.057.
Full text
38
Ma, Zhenyang, Dexu Liu, Shun Yuan, Zhaobin Duan, and Zhijun Wu. "Damage Effects and Mechanisms of High-Power Microwaves on Double Heterojunction GaN HEMT." Aerospace 11, no. 5 (April 26, 2024): 346. http://dx.doi.org/10.3390/aerospace11050346.
Full textAbstract:
In this paper, simulation modeling was carried out using Sentaurus Technology Computer-Aided Design. Two types of high electron mobility transistors (HEMT), an AlGaN/GaN/AlGaN double heterojunction and AlGaN/GaN single heterojunction, were designed and compared. The breakdown characteristics and damage mechanisms of the two devices under the injection of high-power microwaves (HPM) were studied. The variation in current density and peak temperature inside the device was analyzed. The effect of Al components at different layers of the device on the breakdown of HEMTs is discussed. The effect and law of the power damage threshold versus pulse width when the device was subjected to HPM signals was verified. It was shown that the GaN HEMT was prone to thermal breakdown below the gate, near the carrier channels. A moderate increase in the Al component can effectively increased the breakdown voltage of the device. Compared with the single heterojunction, the double heterojunction HEMT devices were more sensitive to Al components. The high domain-limiting characteristics effectively inhibited the overflow of channel electrons into the buffer layer, which in turn regulated the current density inside the device and improved the temperature distribution. The leakage current was reduced and the device switching characteristics and breakdown voltage were improved. Moreover, the double heterojunction device had little effect on HPM power damage and high damage resistance. Therefore, a theoretical foundation is proposed in this paper, indicating that double heterojunction devices are more stable compared to single heterojunction devices and are more suitable for applications in aviation equipment operating in high-frequency and high-voltage environments. In addition, double heterojunction GaN devices have higher radiation resistance than SiC devices of the same generation.
39
Sugimoto, M., H. Ueda, T. Uesugi, and T. kachi. "WIDE-BANDGAP SEMICONDUCTOR DEVICES FOR AUTOMOTIVE APPLICATIONS." International Journal of High Speed Electronics and Systems 17, no. 01 (March 2007): 3–9. http://dx.doi.org/10.1142/s012915640700414x.
Full textAbstract:
In this paper, we discuss requirements of power devices for automotive applications, especially hybrid vehicles and the development of GaN power devices at Toyota. We fabricated AlGaN/GaN HEMTs and measured their characteristics. The maximum breakdown voltage was over 600V. The drain current with a gate width of 31mm was over 8A. A thermograph image of the HEMT under high current operation shows the AlGaN/GaN HEMT operated at more than 300°C. And we confirmed the operation of a vertical GaN device. All the results of the GaN HEMTs are really promising to realize high performance and small size inverters for future automobiles.
40
Kong, Cen, Jian Jun Zhou, Jin Yu Ni, Yue Chan Kong, and Tang Sheng Chen. "High Breakdown Voltage GaN Power HEMT on Si Substrate." Advanced Materials Research 805-806 (September 2013): 948–53. http://dx.doi.org/10.4028/www.scientific.net/amr.805-806.948.
Full textAbstract:
GaN high electronic mobility transistor (HEMT) was fabricated on silicon substrate. A breakdown voltage of 800V was obtained without using field plate technology. The fabrication processes were compatible with the conventional GaN HEMTs fabrication processes. The length between drain and gate (Lgd) has a greater impact on breakdown voltage of the device. A breakdown voltage of 800V with maximum current density of 536 mA/mm was obtained while Lgd was 15μm and the Wg was 100μm. The specific on-state resistance of this devices was 1.75 mΩ·cm2, which was 85 times lower than that of silicon MOSFET with same breakdown voltage. The results establish the foundation of low cost GaN HEMT power electronic devices.
41
Luna, Lunet E., Travis J. Anderson, Andrew D. Koehler, Marko J. Tadjer, Ozgur Aktas, Karl D. Hobart, and Fritz J. Kub. "Vertical and Lateral GaN Power Devices Enabled by Engineered GaN Substrates." ECS Transactions 86, no. 9 (July 20, 2018): 3–8. http://dx.doi.org/10.1149/08609.0003ecst.
Full text
42
Fu, Houqiang, Kai Fu, Srabanti Chowdhury, Tomas Palacios, and Yuji Zhao. "Vertical GaN Power Devices: Device Principles and Fabrication Technologies—Part II." IEEE Transactions on Electron Devices 68, no. 7 (July 2021): 3212–22. http://dx.doi.org/10.1109/ted.2021.3083209.
Full text
43
Fu, Houqiang, Kai Fu, Srabanti Chowdhury, Tomas Palacios, and Yuji Zhao. "Vertical GaN Power Devices: Device Principles and Fabrication Technologies—Part I." IEEE Transactions on Electron Devices 68, no. 7 (July 2021): 3200–3211. http://dx.doi.org/10.1109/ted.2021.3083239.
Full text
44
Roberts, J., T. MacElwee, and L. Yushyna. "The Thermal Integrity of Integrated GaN Power Modules." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2013, HITEN (January 1, 2013): 000061–68. http://dx.doi.org/10.4071/hiten-mp12.
Full textAbstract:
In this paper the authors describe GaN (gallium nitride) power switching transistors that use copper post and substrate via interconnect techniques. These transistors can be matrixed to allow a parallel array of the devices to provide very low on-resistance and high operating voltages. At 150 °C the basic building block which is a 2 × 2 mm die, provides 1200 V / 14 A. A 2×2 matrix array of these transistors provides for example, 1200 V / 56 A operation. The overall GaN device size is 4 × 4 mm. This high current density is achieved by using a unique castellated island topology. This provides short fingers that are not required to carry high current. No high current tracks are provided on-chip because on-chip metal is typically less than 3 microns thick. The die has 12 copper posts on the source islands that carry the current to the CMOS driver device. The CMOS driver is used in a cascode configuration which allows the normally-on GaN transistor to be operated with convenient normally-off functionality. The two devices are combined in a modular assembly. The paper provides a thermal analysis of the assembly. The objective of the design is to keep the ‘junction’ temperature of the GaN transistor below 150 °C.
45
Green, B., H. Henry, K. Moore, J. Abdou, R. Lawrence, F. Clayton, M. Miller, et al. "A GAN ON SIC HFET DEVICE TECHNOLOGY FOR WIRELESS INFRASTRUCTURE APPLICATIONS." International Journal of High Speed Electronics and Systems 17, no. 01 (March 2007): 11–14. http://dx.doi.org/10.1142/s0129156407004151.
Full textAbstract:
This paper presents Freescale's baseline GaN device technology for wireless infrastructure applications. At 48 V drain bias and 2.1 GHz operating frequency 10-11 W/mm, 62-67% power-added efficiency (PAE) is realized on 0.3 mm devices and 74 W (5.9 W/mm), 55% PAE is demonstrated for 12.6 mm devices. A simple thermal model shows that a more than twofold increase in channel temperature is responsible for limiting the CW power density on the 12.6 mm compared to 0.3 mm devices. The addition of through wafer source vias to improve gain and tuning the device in a fixture optimized for efficiency yield an output power of 57W (4.7 W/mm), PAE of 66%, and a calculated channel temperature of approximately 137°C at a 28 V bias.
46
Henning, Stephan W., Luke Jenkins, Sidni Hale, Christopher G. Wilson, John Tennant, Justin Moses, Mike Palmer, and Robert N. Dean. "Manual Assembly of 400um Bumped-Die GaN Power Semiconductor Devices." International Symposium on Microelectronics 2012, no. 1 (January 1, 2012): 000514–23. http://dx.doi.org/10.4071/isom-2012-poster_hale.
Full textAbstract:
Until recently, power semiconductors were usually produced as TO, power-PAK, and D-PAK style packaging, due to die size, thermal dissipation requirements, and the vertical flow of current through the devices. The introduction of GaN to power semiconductors has allowed manufactures to produce devices with approximately 9% the footprint of similar rated D-PAK Si MOSFETs. In addition, GaN semiconductors have much better theoretical limits of specific on-resistance to breakdown voltage, when compared to Si and SiC. As of now, GaN devices offer very good performance at much less the cost of SiC, very small footprints, no reverse recovery losses of a body diode, very low RDS(ON), and very fast turn-on and turn-off times due to QGS in single-digit nC range. GaN semiconductors are expected to make vast improvements over the next decade. Unfortunately, this decrease in package size has made design prototyping significantly more challenging. Traditional manual solder iron assembly is not sufficient for these devices. Difficulties include board design, device handling, alignment, solder reflow, flux residue removal, and post-assembly inspection. The EPC 2014 and 2015 devices both have a 4mm pitch and are 1.85mm2 and 6.70mm2, respectively. In many situations, the decreased pitch and small overall size of these devices mandate the use of automated assembly equipment, such as a pick & place, to ensure quality and repeatability of assembly. However, this may not be feasible for initial prototyping, due to cost and time constraints. Here we will present a technique for manual assembly of these chip scale devices, applied specifically to the EPC 2014 and 2015. This should decrease the cost and turn time for prototype assembly when utilizing these types of chip scale packaged power semiconductor devices.
47
Fan, Chen, Haitao Zhang, Huipeng Liu, Xiaofei Pan, Su Yan, Hongliang Chen, Wei Guo, Lin Cai, and Shuhua Wei. "A Study on the Dynamic Switching Characteristics of p-GaN HEMT Power Devices." Micromachines 15, no. 8 (July 31, 2024): 993. http://dx.doi.org/10.3390/mi15080993.
Full textAbstract:
This study employs an innovative dynamic switching test system to investigate the dynamic switching characteristics of three p-GaN HEMT devices. The dynamic switching characteristics are different from the previous research on the dynamic resistance characteristics of GaN devices, and the stability of GaN devices can be analyzed from the perspective of switching characteristics. Based on the theory of dynamic changes in threshold opening voltage and capacitance caused by electrical stress, the mechanism of dynamic switching characteristics of GaN HEMT devices is studied and analyzed in detail. The test results have shown that electrical stress induces trap ionization within the device, resulting in fluctuations in electric potential and ultimately leading to alterations in two critical factors of the dynamic switching characteristics of GaN HEMT devices, the parasitic capacitance and the threshold voltage. The dynamic changes in capacitance before and after electrical stress vary among devices, resulting in different dynamic switching characteristics. The test system is capable of extracting the switching waveform for visual comparison and quantitatively calculating the changes in switching parameters before and after electrical stressing. This test provides a prediction for the drift of switch parameters, offering pre-guidance for the robustness of the optimized application scheme.
48
Chao, P. C., Kanin Chu, Jose Diaz, Carlton Creamer, Scott Sweetland, Ray Kallaher, Craig McGray, Glen D. Via, and John Blevins. "GaN-on-Diamond HEMTs with 11W/mm Output Power at 10GHz." MRS Advances 1, no. 2 (2016): 147–55. http://dx.doi.org/10.1557/adv.2016.176.
Full textAbstract:
ABSTRACTA new device-first low-temperature bonded gallium nitride (GaN)-on-diamond high-electronic mobility transistor (HEMT) technology with state-of-the-art, radio frequency (RF) power performance is described. In this process, the devices were first fabricated on a GaN-on-silicon carbide (SiC) epitaxial wafer and were subsequently separated from the SiC and bonded onto a high-thermal-conductivity diamond substrate. Thermal measurements showed that the GaN-on-diamond devices maintained equivalent or lower junction temperatures than their GaN-on-SiC counterparts while delivering more than three-times higher RF power within the same active area. Such results demonstrate that the GaN device transfer process is capable of preserving intrinsic transistor electrical performance while taking advantage of the excellent thermal properties of diamond substrates. Preliminary step-stress and room-temperature, steady-state life testing shows that the low-temperature bonded GaN-on-diamond device has no inherently reliability limiting factor. GaN-on-diamond is ideally suited to wideband electronic warfare (EW) power amplifiers as they are the most thermally challenging due to continuous wave (CW) operation and the reduced power-added efficiency obtained with ultra-wide bandwidth circuit implementations.
49
Gramatikov, Pavlin. "GALLIUM NITRIDE POWER ELECTRONICS FOR AEROSPACE - MODELLING AND SIMULATION." Journal Scientific and Applied Research 15, no. 1 (March 3, 2019): 11–21. http://dx.doi.org/10.46687/jsar.v15i1.250.
Full text
50
Zhang, Meihe, and Yunsong Zhang. "Status and prospects of wide bandgap semiconductor devices." Applied and Computational Engineering 23, no. 1 (November 7, 2023): 252–62. http://dx.doi.org/10.54254/2755-2721/23/20230663.
Full textAbstract:
Wide bandgap semiconductor materials, such as silicon carbide (SiC) and gallium nitride (GaN), have attracted significant attention due to their exceptional electronic and thermal properties, making them ideal for high-power and high-frequency applications. This study provides a comprehensive review of SiC and GaN materials and recent developments in power electronics, radio frequency (RF) devices. The study focuses on the unique properties of these materials, which enable them to outperform traditional silicon-based devices in terms of efficiency, power density, and overall performance. The objectives include examining material properties, assessing SiC and GaN-based device performance, comparing electron mobility, on-resistance, and temperature dependence, and identifying areas for future research. The content covers a range of devices, including SiC MOSFETs, IGBTs, GaN HEMTs, and their applications, with a focus on recent advances in material quality and device reliability. The research contribution of the paper lies in its comprehensive analysis, which serves as a valuable reference for researchers, manufacturers, and policymakers working to accelerate the development of advanced materials and technologies. The successful implementation of SiC and GaN-based devices will lead to more energy-efficient systems, enhanced performance across various sectors, and a reduction in global energy consumption and environmental impact, revolutionizing the electronics industry.