Relevant bibliographies by topics / GaN Power and THz Devices

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'GaN Power and THz Devices'

Author: Grafiati
Published: 6 September 2023

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Journal articles on the topic "GaN Power and THz Devices"

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CHU, K. K., P. C. CHAO, and J. A. WINDYKA. "STABLE HIGH POWER GaN-ON-GaN HEMT." International Journal of High Speed Electronics and Systems 14, no. 03 (September 2004): 738–44. http://dx.doi.org/10.1142/s0129156404002764.

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High power AlGaN/GaN HEMTs on free-standing GaN substrates with excellent stability have been demonstrated for the first time. When operated at a drain bias of 50V, devices without a field plate showed a record CW output power density of 10.0W/mm at 10GHz with an associated power-added efficiency of 45%. The efficiency reaches a maximum of 58% with an output power density of 5.5W/mm under a drain bias of 25V at 10GHz. Long-term stability of device RF operation was also examined. Under ambient conditions, devices biased at 25V and driven at 3dB gain compression remained stable at least up to 1,000 hours, degrading only by 0.35dB in output power. Such results clearly demonstrate the feasibility of GaN - on - GaN HEMT as an alternative device technology to the GaN - on - SiC HEMT in supporting reliable, high performance microwave power applications.
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Nela, Luca, Ming Xiao, Yuhao Zhang, and Elison Matioli. "A perspective on multi-channel technology for the next-generation of GaN power devices." Applied Physics Letters 120, no. 19 (May 9, 2022): 190501. http://dx.doi.org/10.1063/5.0086978.

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The outstanding properties of Gallium Nitride (GaN) have enabled considerable improvements in the performance of power devices compared to traditional silicon technology, resulting in more efficient and highly compact power converters. GaN power technology has rapidly developed and is expected to gain a significant market share in an increasing number of applications in the coming years. However, despite the great progress, the performance of current GaN devices is still far from what the GaN material could potentially offer, and a significant reduction of the device on-resistance for a certain blocking voltage is needed. Conventional GaN high-electron-mobility-transistors are based on a single two-dimensional electron gas (2DEG) channel, whose trade-off between electron mobility and carrier density limits the minimum achievable sheet resistance. To overcome such limitations, GaN power devices including multiple, vertically stacked 2DEG channels have recently been proposed, showing much-reduced resistances and excellent voltage blocking capabilities for a wide range of voltage classes from 1 to 10 kV. Such devices resulted in unprecedented high-power figures of merit and exceeded the SiC material limit, unveiling the full potential of lateral GaN power devices. This Letter reviews the recent progress of GaN multi-channel power devices and explores the promising perspective of the multi-channel platform for future power devices.
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Martín-Guerrero, Teresa M., Damien Ducatteau, Carlos Camacho-Peñalosa, and Christophe Gaquière. "GaN devices for power amplifier design." International Journal of Microwave and Wireless Technologies 1, no. 2 (April 2009): 137–43. http://dx.doi.org/10.1017/s1759078709000178.

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This paper describes some aspects of the fabrication and modeling of a GaN device to be employed in a power amplifier covering one WiMAX frequency band. The work has been carried out in the frame of the TARGET's NoE work package WiSELPAS. Details concerning the AlGaN/GaN device technology and the performed linear and nonlinear measurements are provided. Since these new devices require specific nonlinear models, a procedure for selecting an appropriate simplified nonlinear model and for extracting its parameters is discussed and evaluated. The developed nonlinear model has been experimentally tested under linear and nonlinear conditions. The agreement between experimental and model-predicted performance suggests that the described model could be useful in a preliminary power amplifier design.
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Di, Kuo, and Bingcheng Lu. "Gallium Nitride Power Devices in Magnetically Coupled Resonant Wireless Power Transfer Systems." Journal of Physics: Conference Series 2463, no. 1 (March 1, 2023): 012007. http://dx.doi.org/10.1088/1742-6596/2463/1/012007.

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Abstract The main function of power devices is to convert electrical energy through high-speed switching, such as AC/DC, high and low voltage conversion, etc. Therefore, the performance of the device directly affects the performance of the power electronic device, thereby further affecting the conversion efficiency of electrical energy. The arrival of the 5G era has greatly increased the demand for gallium nitride (GaN). The development of the wireless communication market has made GaN play a key role in many aspects of human activities. The main aim of this article is to research the application of GaN power devices in magnetically coupled resonant wireless power transfer (WPT) systems. This paper first introduces the related concepts of GaN power devices, magnetic coupling resonance and WPT, and analyzes the construction of magnetic coupling resonance WPT system in detail. Secondly, the energy transmission structure is analyzed, the system is designed and the system loss is calculated and analyzed. The system loss experiment shows that by using the output capacitor of the GaN device, the dead time is optimized, the conduction loss of the switch tube is reduced, the efficiency of the converter device is improved, and the practical application of the GaN device is provided.
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Roberts, J., A. Mizan, and L. Yushyna. "Optimized High Power GaN Transistors." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2015, HiTEN (January 1, 2015): 000195–99. http://dx.doi.org/10.4071/hiten-session6-paper6_1.

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GaN transistors intended for use at 600–900 V and that are capable of providing of 30–100 A are being introduced this year. These devices have a substantially better switching Figure-of-Merit (FOM) than silicon power switches. Rapid market acceptance is expected leading to compound annual growth rates of 85 %. However these devices present new packaging challenges. Their high speed combined with the very high current being switched demands that very low inductance packaging must be combined with highly controlled drive circuitry. While convention, and the usually vertical power device die structure, has largely determined power transistor package formats in the past, the lateral nature of the today GaN devices requires the use of new package types. The new packages have to operate at high temperatures while providing effective heat removal, low inductance, and low series resistance. Because GaN devices are lateral they require the package metal tracks to be integrated within the on-chip tracks to carry the current away from the thin on-chip metal tracks. The new GaN devices are available in two formats: one for use in embedded modular assemblies and the other for use mounted upon conventional circuit board systems. The package intended for discrete printed circuit board (PCB) assemblies has a top side cooling option that simplifies the thermal interface to the heat sink. The paper describes the die layout including the added copper tracks. The corresponding package elements that interface directly with the surface of the die play a vital role in terms of the current handling. They also provide the interface to the external busbars that allow the package to be mounted within, or on PCB. The assembly has been subject to extensive thermal analysis and the performance of a 30 A, 650 V transistor is described.
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Zhong, Min, Ying Xi Niu, Hai Ying Cheng, Chen Xi Yan, Zhi Yuan Liu, and Dong Bo Song. "Advances for Enhanced GaN-Based HEMT Devices with p-GaN Gate." Materials Science Forum 1014 (November 2020): 75–85. http://dx.doi.org/10.4028/www.scientific.net/msf.1014.75.

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With the development of high-voltage switches and high-speed RF circuits, the enhancement mode(E-mode) AlGaN/GaN HEMTs have become a hot topic in those fields. The E-mode GaN-based HEMTs have channel current at the positive gate voltage, greatly expanding the device in low power digital circuit applications. The main methods to realize E-mode AlGaN/GaN HEMT power devices are p-GaN gate technology, recessed gate structure, fluoride ion implantation technology and Cascode structure (Cascode). In this paper, the advantage and main realizable methods of E-mode AlGaN/GaN HEMT are briefly described. The research status and problems of E-mode AlGaN/GaN HEMT devices fabricated by p-GaN gate technology are summarized. The advances of p-GaN gate technology, and focuses on how these research results can improve the power characteristics and reliability of E-mode AlGaN/GaN HEMT by optimizing device structure and improving process technology, are discussed.
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Chowdhury, Sauvik, Zachary Stum, Zhong Da Li, Katsunori Ueno, and T. Paul Chow. "Comparison of 600V Si, SiC and GaN Power Devices." Materials Science Forum 778-780 (February 2014): 971–74. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.971.

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In this paper the DC and switching performance of 600V Si, SiC and GaN power devices using device simulation. The devices compared are Si superjunction MOSFET, Si field stop IGBT, SiC UMOSFET and GaN HEMT.
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Zhang, Yuhao, Ruizhe Zhang, Qihao Song, Qiang Li, and J. Liu. "(Invited) Breakthrough Avalanche and Short Circuit Robustness in Vertical GaN Power Devices." ECS Meeting Abstracts MA2022-01, no. 31 (July 7, 2022): 1307. http://dx.doi.org/10.1149/ma2022-01311307mtgabs.

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After decades of relentless efforts, GaN power devices, specifically, the lateral GaN high-electron mobility transistor (HEMT), have been commercialized in the 15-650 V classes. Owing to GaN’s competitive physical properties over Si and SiC for power electronics, GaN HEMTs allow for higher switching frequency and therefore, have already seen wide adoptions in fast chargers, wireless charging, data centers, and electrified transportation. Despite the success of lateral GaN HEMTs, a vertical device structure is usually believed to be more favorable for high-voltage, high-power devices. In the last few years, with the advent and maturity of large-diameter, low-dislocation GaN wafers on freestanding GaN substrates, a new generation of vertical GaN power devices have been developed to extend GaN’s application space beyond 650 V. Very recently, several industrial vertical GaN devices in the voltage classes of 1.2-1.7 kV have been demonstrated, which are close to commercialization. This presentation will review the key advancements in vertical GaN power devices in the past decade, with a focus on the device technologies that are being commercialized, and provide a prospective for research and development in the next decade. The devices to be covered will include two-terminal power rectifiers including the p-n diodes, Schottky barrier diodes, junction barrier Schottky diodes, and trench MIS/MOS barrier Schottky diodes. The transistors will include the trench and planar MOSFETs, current-aperture vertical electron transistors, fin-channel MOSFETs, and fin-channel JFETs. Particular emphasis will be on large-area rectifiers and transistors with a device performance superior to similarly-rated Si and SiC transistors. The newly demonstrated avalanche and short-circuit robustness in vertical GaN devices, which are lacking in lateral GaN HEMTs, as well as their underlying device physics, will also be introduced. The presentation will be concluded by a discussion of current challenges and future application spaces of vertical GaN devices, as well as emerging vertical GaN devices (e.g., superjunction) under development.
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Wu, Ping, Wen Sheng Wei, Jun Ding Zheng, Wei Bo Yang, Chang Li, Ming Chang He, and Yi Wan. "Optimal Design of Large Signal Performance of AlN/GaN Hetero-Structural IMPATT and MITATT Diodes." Materials Science Forum 1014 (November 2020): 157–62. http://dx.doi.org/10.4028/www.scientific.net/msf.1014.157.

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Hetero-structure of AlxGa1-xN/GaN exhibits important applications in high frequency and large power devices. In this paper, AlN/GaN is adopted to optimal design the large power impact avalanche transit time (IMPATT) and mixed tunneling avalanche transit time (MITATT) diodes operating at the atmospheric low loss window frequency of 0.85 THz. The static state and large signal characteristics of the devices are numerically simulated. The values of peak electric field strength, break-down voltage, avalanche voltage, the maximum generation rates of avalanche and tunneling, admittance-frequency relation, output power, conversion efficiency, quality factor of the proposed hetero-structural IMPATT and MITATT diodes are calculated, respectively. Via comparing the obtained results of (n)AlN/(p)GaN and (n)GaN/(p)AlN IMPATT diodes to those of the MITATT counterparts, there exists little performance difference between IMPATT and MITATT devices while implies significant difference between the (n)AlN/(p)GaN and (n)GaN/(p)AlN diodes.
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Zhang, Yuhao, Ruizhe Zhang, Qihao Song, Qiang Li, and J. Liu. "(Invited) Breakthrough Avalanche and Short Circuit Robustness in Vertical GaN Power Devices." ECS Transactions 108, no. 6 (May 20, 2022): 11–20. http://dx.doi.org/10.1149/10806.0011ecst.

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Power devices are highly desirable to possess excellent avalanche and short-circuit (or surge-current) robustness for numerous power electronics applications like automotive powertrains, electric grids, motor drives, among many others. Current commercial GaN power device, the lateral GaN high-electron-mobility transistor (HEMT), is known to have no avalanche capability and very limited short-circuit robustness. These limitations have become a roadblock for penetration of GaN devices in many industrial power applications. Recently, through collaborations with NexGen Power Systems (NexGen), Inc., we have demonstrated breakthrough avalanche, surge-current and short-circuit robustness in NexGen’s vertical GaN p-n diodes and fin-shape junction-gate field-effect-transistors (Fin-JFETs). These large-area GaN diodes and Fin-JFETs were manufactured in NexGen’s 100 mm GaN-on-GaN fab. The demonstrated avalanche, surge-current and short-circuit capabilities are comparable or even superior to Si and SiC power devices. Additionally, vertical GaN Fin-JFETs were found to fail to open-circuit under avalanche and short-circuit conditions, which is highly desirable for the system safety. This talk reviews the key robustness results of vertical GaN power devices and unveils the enabling device physics. Fundamentally, these results signify that, in contrast to some popular belief, GaN devices with appropriate designs can achieve excellent robustness and thereby encounter no barriers for applications in electric vehicles, grids, renewable processing, and industrial motor drives.
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Dissertations / Theses on the topic "GaN Power and THz Devices"

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Zhang, Yuhao Ph D. Massachusetts Institute of Technology. "GaN-based vertical power devices." Thesis, Massachusetts Institute of Technology, 2017. http://hdl.handle.net/1721.1/112002.

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Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2017.
This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Cataloged from student-submitted PDF version of thesis.
Includes bibliographical references (pages 163-170).
Power electronics based on Gallium Nitride (GaN) is expected to significantly reduce the losses in power conversion circuits and increase the power density. This makes GaN devices very exciting candidates for next-generation power electronics, for the applications in electric vehicles, data centers, high-power and high-frequency communications. Currently, both lateral and vertical structures are considered for GaN power devices. In particular, vertical GaN power devices have attracted significant attention recently, due to the potential for achieving high breakdown voltage and current levels without enlarging the chip size. In addition, these vertical devices show superior thermal performance than their lateral counterparts. This PhD thesis addresses several key obstacles in developing vertical GaN power devices. The commercialization of vertical GaN power devices has been hindered by the high cost of bulk GaN. The first project in this PhD thesis demonstrated the feasibility of making vertical devices on a low-cost silicon (Si) substrate for the first time. The demonstrated high performance shows the great potential of low-cost vertical GaN-on-Si devices for 600-V level high-current and high-power applications. This thesis has also studied the origin of the off-state leakage current in vertical GaN pn diodes on Si, sapphire and GaN substrates, by experiments, analytical calculations and TCAD simulations. Variable-range-hopping through threading dislocations was identified as the main off-state leakage mechanism in these devices. The design space of leakage current of vertical GaN devices has been subsequently derived. Thirdly, a novel GaN vertical Schottky rectifier with trench MIS structures and trench field rings was demonstrated. The new structure greatly enhanced the reverse blocking characteristics while maintaining a Schottky-like good forward conduction. This new device shows great potential for using advanced vertical Schottky rectifiers for high-power and high-frequency applications. Finally, we investigated a fundamental and significant challenge for GaN power devices: the lack of reliable and generally useable patterned pn junctions. Two approaches have been proposed to make lateral patterned pn junctions. Two devices, junction barrier Schottky devices and super-junction devices, have been designed and optimized. Preliminary experimental results were also demonstrated for the feasibility of making patterned pn junctions and fabricating novel power devices.
by Yuhao Zhang.
Ph. D.
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Unni, Vineet. "Next-generation GaN power semiconductor devices." Thesis, University of Sheffield, 2015. http://etheses.whiterose.ac.uk/11984/.

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Nakazawa, Satoshi. "Interface Charge Engineering in AlGaN/GaN Heterostructures for GaN Power Devices." Kyoto University, 2019. http://hdl.handle.net/2433/244553.

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Lui, Dawei. "Active gate driver design for GaN FET power devices." Thesis, University of Bristol, 2017. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.730883.

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Kumar, Ashwani. "Novel approaches to power efficient GaN and negative capacitance devices." Thesis, University of Sheffield, 2018. http://etheses.whiterose.ac.uk/22492/.

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Recent emergence of data-driven and computation hungry algorithms has fuelled the demand for energy and processing power at an unprecedented rate. Semiconductor industry is, therefore, under constant pressure towards developing energy efficient devices. A Shift towards materials with higher figure-of-merit compared to Si, such as GaN for power conversion is one of the options currently being pursued. A minimisation in parasitic and static power losses in GaN can be brought about by realising on-chip CMOS based gate drivers for GaN power devices. At present, p-channel MOSHFETs in GaN show poor performance due to the low mobility and the severe trade-off between |ION| and |Vth|. For the first time, it is shown that despite a poor hole mobility, it is possible to improve the on-current as well as minimise |ION| - |Vth| trade-off, by adopting a combination of techniques: using an AlGaN cap, biased two-dimensional electron gas, and shrinking source-gate and gate-drain access region and channel lengths. As part of this work, a novel vertical p-channel heterojunction tunnel FET (TFET) utilising polarisation induced tunnel junction (PITJ) is also explored, which unlike common TFETs, shows non-ambipolar transfer characteristics and a better electrostatic control over the tunneling region via the gate. Meeting the ever-increasing demand for computation would require continuous scaling of transistor physical dimensions and supply voltage. While a further reduction in physical dimension is expected to come from adopting a vertical integration scheme, scaling in supply voltage would require achieving sub-60 mV/dec of subthreshold swing. The two common approaches to achieve this are TFETs and negative capacitance (NC) FETs, where the NC operation is commonly associated with ferroelectric materials. This work develops a model to explain sub-60 mV/dec, observed in Ta2O5/ZnO thin-film-transistors, which is governed by the motion of oxygen ions inside Ta2O5, leading to NC under dynamic gate bias sweep.
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Li, Ke. "Wide bandgap (SiC/GaN) power devices characterization and modeling : application to HF power converters." Thesis, Lille 1, 2014. http://www.theses.fr/2014LIL10080/document.

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Les matériaux semi-conducteurs à grand gap tels que le carbure de silicium (SiC) et le nitrure de gallium (GaN) sont utilisés pour fabriquer des composants semi-conducteurs de puissance, qui vont jouer un rôle très important dans le développement des futurs systèmes de conversion d'énergie. L'objectif est de réaliser des convertisseurs avec de meilleurs rendements énergétiques et fonctionnant à haute température. Pour atteindre cet objectif, il est donc nécessaire de bien connaître les caractéristiques de ces nouveaux composants afin de développer des modèles qui seront utilisés lors de la conception des convertisseurs. Cette thèse est donc dédiée à la caractérisation et la modélisation des composants à grand gap, mais également l'étude des dispositifs de mesure des courants des commutations des composants rapides. Afin de déterminer les caractéristiques statiques des composants semi-conducteurs, une méthode de mesure en mode pulsé est présentée. Dans le cadre de cette étude, une diode SiC et un JFET SiC "normally-off" sont caractérisés à l'aide de cette méthode. Afin de mesurer les capacités inter-électrodes de ces composants, une nouvelle méthode basée sur l'utilisation des pinces de courant est proposée. Des modèles comportementaux d'une diode Si et d'un JFET SiC sont proposés en utilisant les résultats de caractérisation. Le modèle de la diode obtenu est validé par des mesures des courants au blocage (recouvrement inverse) dans différentes conditions de commutation. Pour valider le modèle du JFET SiC, une méthode de mesure utilisant une pince de courant de surface est proposée
Compared to traditional silicon (Si) semiconductor material, wide bandgap (WBG) materials like silicon carbide (SiC) and gallium nitride are gradually applied to fabricate power semiconductor devices, which are used in power converters to achieve high power efficiency, high operation temperature and high switching frequency. As those power devices are relatively new, their characterization and modeling are important to better understand their characteristics for better use. This dissertation is mainly focused on those WBG power semiconductor devices characterization, modeling and fast switching currents measurement. In order to measure their static characteristics, a single-pulse method is presented. A SiC diode and a "normally-off" SiC JFET is characterized by this method from ambient temperature to their maximal junction temperature with the maximal power dissipation around kilowatt. Afterwards, in order to determine power device inter-electrode capacitances, a measurement method based on the use of multiple current probes is proposed and validated by measuring inter-electrode capacitances of power devices of different technologies. Behavioral models of a Si diode and the SiC JFET are built by using the results of the above characterization methods, by which the evolution of the inter-electrode capacitances for different operating conditions are included in the models. Power diode models are validated with the measurements, in which the current is measured by a proposed current surface probe
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Brooks, Clive Raymond. "GaN microwave power FET nonlinear modelling techniques." Thesis, Stellenbosch : University of Stellenbosch, 2010. http://hdl.handle.net/10019.1/4306.

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Thesis (MScEng (Electrical and Electronic Engineering))--University of Stellenbosch, 2010.
ENGLISH ABSTRACT: The main focus of this thesis is to document the formulation, extraction and validation of nonlinear models for the on-wafer gallium nitride (GaN) high-electron mobility (HEMT) devices manufactured at the Interuniversity Microelectronics Centre (IMEC) in Leuven, Belgium. GaN semiconductor technology is fast emerging and it is expected that these devices will play an important role in RF and microwave power amplifier applications. One of the main advantages of the new GaN semiconductor technology is that it combines a very wide band-gap with high electron mobility, which amounts to higher levels of gain at very high frequencies. HEMT devices based on GaN, is a fairly new technology and not many nonlinear models have been proposed in literature. This thesis details the design of hardware and software used in the development of the nonlinear models. An intermodulation distortion (IMD) measurement setup was developed to measure the second and higher-order derivative of the nonlinear drain current. The derivatives are extracted directly from measurements and are required to improve the nonlinear model IMD predictions. Nonlinear model extraction software was developed to automate the modelling process, which was fundamental in the nonlinear model investigation. The models are implemented in Agilent’s Advanced Design System (ADS) and it is shown that the models are capable of accurately predicting the measured S-parameters, large-signal singletone and two-tone behaviour of the GaN devices.
AFRIKAANSE OPSOMMING: Die hoofdoel van hierdie tesis is om die formulering, ontrekking en validasie van nie-lineêre modelle vir onverpakte gallium nitraat (GaN) hoë-elektronmobilisering transistors (HEMTs) te dokumenteer. Die transistors is vervaaardig by die Interuniversity Microelectronics Centre (IMEC) in Leuven, België. GaN-halfgeleier tegnologie is besig om vinnig veld te wen en daar word voorspel dat hierdie transistors ʼn belangrike rol gaan speel in RF en mikrogolf kragversterker toepassings. Een van die hoof voordele van die nuwe GaN-halfgeleier tegnologie is dat dit 'n baie wyd band-gaping het met hoë-elektronmobilisering, wat lei tot hoë aanwins by mikrogolf frekwensies. GaN HEMTs is 'n redelik nuwe tegnologie en nie baie nie-lineêre modelle is al voorgestel in literatuur nie. Hierdie tesis ondersoek die ontwerp van die hardeware en sagteware soos gebruik in die ontwikkeling van nie-lineêre modelle. 'n Intermodulasie distorsie-opstelling (IMD-opstelling) is ontwikkel vir die meting van die tweede en hoër orde afgeleides van die nie-lineêre stroom. Die afgeleides is direk uit die metings onttrek en moet die nie-lineêre IMD-voorspellings te verbeter. Nie-lineêre onttrekking sagteware is ontwikkel om die modellerings proses te outomatiseer. Die modelle word geïmplementeer in Agilent se Advanced Design System (ADS) en bewys dat die modelle in staat is om akkurate afgemete S-parameters, grootsein enkeltoon en tweetoon gedrag van die GaN-transistors te kan voorspel.
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Borga, Matteo. "Characterization and modeling of GaN-based transistors for power applications." Doctoral thesis, Università degli studi di Padova, 2019. http://hdl.handle.net/11577/3422355.

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GaN-based devices have emerged as a promising solution for power management applications. The intrinsic physical properties of the Gallium Nitride are exploited in order to considerably improve the efficiency and to reduce the volume of the next generation power switching converters. The wide energy gap allows to fabricate high voltage-rate devices with a reduced area consumption, whereas the high mobility guarantees a considerably low on-Resistance of the transistor. Moreover, thanks to the reduced parasitic capacitances, the operating frequency of the devices can be higher than conventional Silicon based transistors. In order to ensure a wide spreading of Gallium Nitride technology in the power transistors market, the price of the devices needs to be kept as low as possible. The costs of native substrates for the fabrication of GaN transistors are nowadays prohibitive, so that the epitaxial growth of Gallium Nitride on Silicon substrates has been developed. GaN-on-Silicon is the most suitable technology to fabricate GaN-based devices on a cheap and large area wafers (up to 200 mm), resulting in a significant reduction of the production costs. On the other hand, growing GaN on a foreign substrate results in high dislocation and defect densities which could affect the performance of the devices in terms of both losses and reliability issues. A so-called “buffer decomposition experiment” allowed to evaluate the role of the different layers which compose the vertical stack of a GaN-on-Silicon wafer by characterizing samples obtained by stopping the epitaxial growth at different stages of the process. It is demonstrated that both the thickness and the composition of the epitaxial stack, beside enhancing the breakdown voltage, improve the material quality by limiting the propagation of defects and dislocations. Moreover, a study on the reliability of the Aluminum Nitride layer grown on silicon is presented, showing that the AlN fails due to a wear-out process following a Weibull distribution. Furthermore, an extensive analysis on the reliability of the GaN-on-Silicon vertical stack is presented, as well as a systematic study on the failure statistic. It is shown that the time to failure of the GaN-on-Silicon stack is Weibull distributed, and, although it is weakly temperature-activated, it exponentially depends on the applied voltage. Moreover, the expected lifetime of the tested devices at the operating voltage is extracted. Aiming to further improve the performance of lateral High Electrons Mobility Transistors (HEMTs) in terms of vertical robustness and losses reduction, the impact of the resistivity of the silicon substrates has been evaluated. It is shown that highly resistive p-doped substrate results in a plateau region in the IV characteristic which considerably increases the vertical breakdown voltage of the devices. Nevertheless, the existence of a trade-off between the vertical robustness and the stability of the threshold voltage is demonstrated. A set of electrical characterization ascribes the threshold voltage shift to the positive backgating effect possibly related to the capacitive coupling of the partially depleted substrate which only occurs if lowly p-doped silicon is used. The origin of the plateau region is further investigated by means of a set of TCAD simulations, allowing to develop a two-diodes model which confirms the hypothesis on the substrate depletion. Even if stable and reliable lateral HEMTs are commercially available, their operating voltage is limited to ~ 900 V. In order to expand the applications field of the GaN-based devices to higher operating voltage, different device concepts have been developed so far. A promising solution is represented by (semi-)vertical trench gate devices, which are characterized by a thick drift layer where the OFF-state electric field spreads vertically in a bulky region, thus avoiding surface effects. Thanks to the vertical architecture, the OFF-state breakdown only depends on the thickness of the epitaxial stack, thus allowing to reach high breakdown voltages with a limited area consumption. Since the carriers must flow vertically, the gate of the devices lies in an etched trench, and it consists of a Metal Oxide Semiconductor (MOS) system. Within this thesis the gate leakage is deeply studied on devices with different gate dielectric, by means of electrical characterizations performed with different connection configurations and different bias polarities. Moreover, the gate capacitance is analytically calculated, and the experimental behavior observed for the Gate-Source and Gate-Drain capacitances over the applied voltage is discussed and modeled considering the GaN bias condition close to the dielectric interface. Lastly, a preliminary dielectric trap characterization is performed by evaluating the capacitance hysteresis induced by the electric field within different gate oxide materials. The last section of this work presents a custom setup developed for the characterization of the threshold voltage variations over the time. The stability of the threshold voltage is fundamental for allowing a device to operate properly in a switching converter. Standard pulsed systems used for the characterization of the threshold voltage allow to evaluate the impact of the bias level on the threshold variation, but no details on the time evolution can be obtained. The presented threshold transient setup monitors the threshold voltage variation over a wide time-interval, ranging from 10 µs to 100 s, allowing the analysis of the trapping and detrapping kinetics. Moreover, by monitoring the transient variation as a function of the temperature it is possible to full characterize (energy level and cross section) the traps involved in the observed instabilities.
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Waller, William Michael. "Optimisation of AlGaN/GaN power devices : interface analysis, fieldplate control and current collapse." Thesis, University of Bristol, 2018. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.743050.

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Murillo, Carrasco Luis. "Modelling, characterisation and application of GaN switching devices." Thesis, University of Manchester, 2016. https://www.research.manchester.ac.uk/portal/en/theses/modelling-characterisation-and-application-of-gan-switching-devices(a227368d-1029-4005-950c-2a098a5c5633).html.

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The recent application of semiconductor materials, such as GaN, to power electronics has led to the development of a new generation of devices, which promise lower losses, higher operating frequencies and reductions in equipment size. The aim of this research is to study the capabilities of emerging GaN power devices, to understand their advantages, drawbacks, the challenges of their implementation and their potential impact on the performance of power converters. The thesis starts by presenting the development of a simple model for the switching transients of a GaN cascode device under inductive load conditions. The model enables accurate predictions to be made of the switching losses and provides an understanding of the switching process and associated energy flows within the device. The model predictions are validated through experimental measurements. The model reveals the suitability of the cascode device to soft-switching converter topologies. Two GaN cascode transistors are characterised through experimental measurement of their switching parameters (switching speed and switching loss). The study confirms the limited effect of the driver voltage and gate resistance on the turn-off switching process of a cascode device. The performance of the GaN cascode devices is compared against state-of-the-art super junction Si transistors. The results confirm the feasibility of applying the GaN cascode devices in half and full-bridge circuits. Finally, GaN cascode transistors are used to implement a 270V - 28V, 1.5kW, 1 MHz phase-shifted full-bridge isolated converter demonstrating the use of the devices in soft-switching converters. Compared with a 100 kHz silicon counterpart, the magnetic component weight is reduced by 69% whilst achieving a similar efficiency of 91%.
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Books on the topic "GaN Power and THz Devices"

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Meneghini, Matteo, Gaudenzio Meneghesso, and Enrico Zanoni, eds. Power GaN Devices. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-43199-4.

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Committee, New Jersey Legislature General Assembly Environment and Solid Waste. Committee meeting of Assembly Environment and Solid Waste Committee: Assembly bill nos. 409 and 2439 : discussion on the implementation of the phase II California Low Emission Vehicle program beginning in calendar year 2006. Trenton, N.J: Office of Legislative Services, Public Information Office, Hearing Unit, 2002.

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New Jersey. Legislature. General Assembly. Environment and Solid Waste Committee. Committee meeting of Assembly Environment and Solid Waste Committee: Testimony related to the potential license extension for the Oyster Creek Nuclear Generating Station : Lacey Township Middle School, Forked River, New Jersey, February 10, 2005, 7:00 p.m. Trenton, NJ: Office of Legislative Services, Public Information Office, Hearing Unit, 2005.

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Committee, New Jersey Legislature General Assembly Environment and Solid Waste. Committee meeting of Assembly Environment and Solid Waste Committee: Assembly bill no. 3301: the Global Warming Response Act : Committee Room 9, State House Annex, Trenton, New Jersey, February 26, 2007, 2:00 p.m. Trenton, NJ: New Jersey State Legislature, Assembly Environment and Solid Waste Committee, 2007.

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Office, General Accounting. Air pollution: Air quality implications of alternative fuels : report to the chairman, Subcommittee on Energy and Power, Committee on Energy and Commerce, House of Representatives. Washington, D.C: The Office, 1990.

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Office, General Accounting. Air pollution: Estimated benefits and costs of the Navajo Generating Station's emissions limit : report to the Chairman, Subcommittee on Water and Power Resources, Committee on Resources, House of Representatives. Washington, D.C. (P.O. Box 37050, Washington, D.C. 20013): The Office, 1998.

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Office, General Accounting. Air pollution: EPA could take additional steps to help maximize the benefits from the 2007 diesel emissions standards. Washington, D.C: United States, General Accounting Office, 2004.

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United States. Congress. House. Committee on Energy and Commerce. Subcommittee on Health and the Environment., ed. Air pollution: Impact of the White House entities on two clean air rules : report to the Chairman, Subcommittee on Health and the Environment, Committee on Energy and Commerce, House of Representatives. Washington, D.C: The Office, 1993.

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Office, General Accounting. Air pollution: Prior indoor air quality problems at the National Institute of Environmental Health Sciences : report to the Honorable Lauch Faircloth, U.S. Senate. Washington, D.C. (P.O. Box 37050, Washington, D.C. 20013): The Office, 1998.

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Office, General Accounting. Air pollution: State planning requirements will continue to challenge EPA and the states : report to the chairman, Committee on Energy and Commerce, House of Representatives. Washington, D.C: GAO, 1993.

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Book chapters on the topic "GaN Power and THz Devices"

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Bin, Dong. "9 The Packaging Technologies for GaN HEMTs." In Gallium Nitride Power Devices, 261–80. CRC Press Taylor & Francis Group 6000 Broken Sound Parkway NW, Suite 300 Boca Raton, FL 33487-2742: CRC Press, 2017. http://dx.doi.org/10.1201/9781315196626-10.

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Chowdhury, Srabanti. "Power Conversion and the Role of GaN." In Handbook of GaN Semiconductor Materials and Devices, 329–45. Boca Raton : Taylor & Francis, CRC Press, 2017. | Series: Series in optics and optoelectronics: CRC Press, 2017. http://dx.doi.org/10.1201/9781315152011-10.

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Sertel, Kubilay, and Georgios C. Trichopoulos. "Non-contact Metrology for mm-Wave and THz Electronics." In High-Frequency GaN Electronic Devices, 283–99. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-20208-8_10.

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Zekentes, Konstantinos, Victor Veliadis, Sei-Hyung Ryu, Konstantin Vasilevskiy, Spyridon Pavlidis, Arash Salemi, and Yuhao Zhang. "SiC and GaN Power Devices." In More-than-Moore Devices and Integration for Semiconductors, 47–104. Cham: Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-21610-7_2.

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Meneghesso, Gaudenzio, Enrico Zanoni, Matteo Meneghini, Maria Ruzzarin, and Isabella Rossetto. "Reliability of GaN-Based Power Devices." In Integrated Circuits and Systems, 75–99. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-77994-2_4.

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Ahirwar, Archana, Poonam Singh, S. K. Tomar, Meena Mishra, Ashok Kumar, and B. K. Sehgal. "GaN HEMT Based S-Band Power Amplifier." In Physics of Semiconductor Devices, 75–76. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_17.

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Coffie, Robert L. "High Power High Frequency Transistors: A Material’s Perspective." In High-Frequency GaN Electronic Devices, 5–41. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-20208-8_2.

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Moens, Peter, Aurore Constant, and Abhishek Banerjee. "Reliability Aspects of 650-V-Rated GaN Power Devices." In Power Electronics and Power Systems, 319–44. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-43199-4_14.

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Bader, Samuel James, Keisuke Shinohara, and Alyosha Molnar. "Linearity Aspects of High Power Amplification in GaN Transistors." In High-Frequency GaN Electronic Devices, 83–107. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-20208-8_4.

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Mishra, Umesh K., and Matthew Guidry. "Lateral GaN Devices for Power Applications (from kHz to GHz)." In Power Electronics and Power Systems, 69–99. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-43199-4_4.

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Conference papers on the topic "GaN Power and THz Devices"

1

Buchta, M., J. Thorpe, H. Blanck, K. Beilenhoff, D. Floriot, M. Kuball, T. Mrotzek, S. Knippscheer, F. Courtade, and A. Xiong. "Influence of packaging materials on GaN RF power devices." In 2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP). IEEE, 2015. http://dx.doi.org/10.1109/imws-amp.2015.7324949.

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Christensen, Adam, and Samuel Graham. "Heat Dissipation in GaN Power Semiconductor Devices." In ASME 2004 International Mechanical Engineering Congress and Exposition. ASMEDC, 2004. http://dx.doi.org/10.1115/imece2004-61525.

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In this work, a numerical study is presented of the impact of growth substrates on thermal dissipation in GaN devices. Substrates included in this study are sapphire, SiC, GaN, ZnO, and LiGaO2. Based on a model high power HFET device with the rear side held at a fixed temperature, the maximum junction temperature in the devices were calculated using finite element analysis and compared. Both interface resistance and the effects of dislocations in the GaN layer were accounted for. Results show that state of the art devices dissipating 10 W/mm of power must be fabricated on high thermal conductivity substrates like GaN or SiC when rear side heat dissipation is utilized. In contrast, an analysis of high heat flux removal convective cooling was investigated for the application of front side heat dissipation. These results show that junction temperatures below 150°C are readily obtainable using this method and are substrate independent. The implications of the substrate independent cooling scheme are discussed.
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Lidow, Alex. "The Path Forward for GaN Power Devices." In 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia). IEEE, 2020. http://dx.doi.org/10.1109/wipdaasia49671.2020.9360274.

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Zhou, J. J., X. Dong, C. Kong, Y. C. Kong, C. J. Ren, Z. H. Li, T. S. Chen, C. Chen, and B. Zhang. "Developing the Ka-band GaN power HEMT devices." In 2012 5th Global Symposium on Millimeter Waves (GSMM 2012). IEEE, 2012. http://dx.doi.org/10.1109/gsmm.2012.6314414.

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Kachi, Tetsu. "State-of-the-art GaN vertical power devices." In 2015 IEEE International Electron Devices Meeting (IEDM). IEEE, 2015. http://dx.doi.org/10.1109/iedm.2015.7409708.

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Kaplar, Robert, Andrew Allerman, Mary Crawford, Brendan Gunning, Jack Flicker, Andrew Armstrong, Luke Yates, et al. "Vertical GaN Devices for Medium-Voltage Power Electronics." In Proposed for presentation at the IEEE Energy Conversion Congress & Expo (ECCE 2021) - Virtual held October 10-14, 2021 in , . US DOE, 2021. http://dx.doi.org/10.2172/1891243.

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Chen, Kevin J., Jin Wei, Gaofei Tang, Han Xu, Zheyang Zheng, Li Zhang, and Wenjie Song. "Planar GaN Power Integration – The World is Flat." In 2020 IEEE International Electron Devices Meeting (IEDM). IEEE, 2020. http://dx.doi.org/10.1109/iedm13553.2020.9372069.

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Briere, Michael A. "The Power Electronics Market and the Status of GaN Based Power Devices." In 2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS). IEEE, 2011. http://dx.doi.org/10.1109/csics.2011.6062462.

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"Quantum, Power, and Compound Semiconductor Devices - Breaking the Limits: Si, SIC and GaN Power Switching Devices." In 2006 International Electron Devices Meeting. IEEE, 2006. http://dx.doi.org/10.1109/iedm.2006.346928.

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Suda, Jun. "SiC and GaN from the viewpoint of vertical power devices." In 2016 74th Annual Device Research Conference (DRC). IEEE, 2016. http://dx.doi.org/10.1109/drc.2016.7548292.

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Reports on the topic "GaN Power and THz Devices"

1

Baker, Bryant. A 3.6 GHz Doherty Power Amplifier with a 40 dBm Saturated Output Power using GaN on SiC HEMT Devices. Portland State University Library, January 2000. http://dx.doi.org/10.15760/etd.1780.

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Bajwa, Abdullah, and Timothy Jacobs. PR-457-17201-R02 Residual Gas Fraction Estimation Based on Measured Engine Parameters. Chantilly, Virginia: Pipeline Research Council International, Inc. (PRCI), February 2019. http://dx.doi.org/10.55274/r0011558.

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Gas exchange processes in two-stroke internal combustion engines, commonly referred to as scavenging, are responsible for removing the exhaust gases in the combustion chamber and preparing the combustible fuel-oxidizer mixture that undergoes combustion and converts the chemical energy of the fuel into mechanical work. Scavenging is a complicated phenomenon because of the simultaneous introduction of fresh gases into the engine cylinder through the intake ports, and the expulsion of combustion products from the previous cycles through the exhaust ports. A non-negligible fraction of the gaseous mixture that is trapped in the cylinder at the conclusion of scavenging is composed of residual gases from the previous cycle. This can cause significant changes to the combustion characteristics of the mixture by changing its composition and temperature, i.e. its thermodynamic state. Thus, it is vital to have accurate knowledge of the thermodynamic state of the post-scavenging mixture to be able to reliably predict and control engine performance, efficiency and emissions. Two tools for estimating the trapped mixture state - a simple scavenging model and empirical correlations - were developed in this study. Unfortunately, it is not practical to directly measure the trapped residual fraction for engines operating in the field. To overcome this handicap, simple scavenging models or correlations, which estimate this fraction based on some economically measurable engine parameters, can be developed. This report summarizes the results of event-II of a multi-event project that aims to develop such mathematical formulations for stationary two-stroke natural gas engines using data from more advanced models and experimentation. In this event, results from a GT-Power based model for an Ajax E-565 single-cylinder engine are used to develop a three-event single zone scavenging model and empirical correlations. Both of these mathematical devices produce accurate estimates of the trapped mixture state. The estimates are compared to GT-Power results. In the next event of the project, these results will be validated using experimental data. Various steps followed in the development of the model have been discussed in this report, and at the end some results and recommendations for the next event of the project have been presented.
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Hopper. L30500 Analysis of the Effects of High-Voltage Direct-Current Transmission Systems on Buried Pipelines. Chantilly, Virginia: Pipeline Research Council International, Inc. (PRCI), January 2008. http://dx.doi.org/10.55274/r0010196.

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The economics of high voltage direct current for long-distance transmission of electrical energy have been reported as very attractive, to the extent that several projects are in the making. Several reasons other than the savings in transmission costs, for example the exchange of peak power between time zones and seasonal zones, would permit utilities to save on plant investment for generating capacity while maintaining a high level of service. This report summarizes work on the initial phase of a study to determine the effects of high-voltage direct-current (H.V.D.C.) electric transmission lines on buried pipeline systems. Pipeline Research Council International, Inc. initiated this work in response to an anticipated threat posed by the Pacific Northwest-Southwest Intertie H.V.D.C. system now being designed (and other possible H.V.D.C. lines in the future) because of the announced plans to pass direct current through the earth. The objectives of the overall program are:(1) To determine the nature and magnitude of problems that will be created by the earth current from H.V.D.C. systems, and(2) To devise means of protecting pipelines from the effects of such currents. A computer program was written based on a mathematical model of a buried pipeline in the environment created by an H.V.D.C. system. Excellent agreement was obtained between computed soil potential gradients and measurements obtained during a field test of H.V.D.C. in Oregon. Reasonably good agreement was also obtained between measured pipe-to-soil potentials on the Pacific Lighting Gas Supply Company pipeline near Camino, California, and computed values during a field test of H.V.D.C. power transmission.
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