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Journal articles on the topic 'GaN Diodes'

Author: Grafiati

Published: 6 September 2023

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1

RAZEGHI, MANIJEH. "GaN-BASED LASER DIODES." International Journal of High Speed Electronics and Systems 09, no. 04 (December 1998): 1007–80. http://dx.doi.org/10.1142/s0129156498000415.

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We discuss optical properties of III-Nitride materials and structures. These properties are critical for the development of III-Nitride-based light-emitting diodes and laser diodes. Minority carrier diffusion length in GaN has been determined to be ~ 0.1 μm. The properties of lasing in GaN have been studied using optical pumping. The red shift of emission peak observed in stimulated emission of GaN has been modeled and attributed to many-body interactions at high excitation. The correlation of photoluminescence and optical pumping has shown that band-to-band, or shallow donor-related bandtail to valence band transition is the necessary mechanism of lasing in GaN. This work showed that the thermal instability of InGaN at growth temperature is of main concern in the fabrication of InGaN-based MQW laser diode structures. Photoluminescence has shown that the InGaN composition is very sensitive to the growth temperature. Therefore InGaN growth temperature should be strictly controlled during InGaN-based MQW growth. This work discovered that proper annealing of Si-doping of InGaN/GaN MQW structures that are properly annealed could reduce the lasing threshold and improve the slope efficiency. Over-annealing of these MQWs can lead to thermal degradation of the active layer. Si-doping in over-annealed MQW structure further degrades its quality. The degradation has been attributed to the increase of defects and/or nonuniform local potential formation. P-type doping on the top of InGaN/GaN could also lead to the formation of compensation layer which also degrades laser diode performances. Optical confinement and carrier confinement in InGaN-based laser diode structures are evaluated for optimum laser diode design. The state-of-the-art and fundamental issues of InGaN-based light-emitting diodes and laser diodes are discussed.

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2

Shashikala, B. N., and B. S. Nagabhushana. "Reduction of reverse leakage current at the TiO2/GaN interface in field plate Ni/Au/n-GaN Schottky diodes." Semiconductor Physics, Quantum Electronics and Optoelectronics 24, no. 04 (November 23, 2021): 399–406. http://dx.doi.org/10.15407/spqeo24.04.399.

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This paper presents the fabrication procedure of TiO2 passivated field plate Schottky diode and gives a comparison of Ni/Au/n-GaN Schottky barrier diodes without field plate and with field plate of varying diameters from 50 to 300 µm. The influence of field oxide (TiO2) on the leakage current of Ni/Au/n-GaN Schottky diode was investigated. This suggests that the TiO2 passivated structure reduces the reverse leakage current of Ni/Au/n-GaN Schottky diode. Also, the reverse leakage current of Ni/Au/n-GaN Schottky diodes decreases as the field plate length increases. The temperature-dependent electrical characteristics of TiO2 passivated field plate Ni/Au/n-GaN Schottky diodes have shown an increase of barrier height within the temperature range 300…475 K.

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3

Shugurov K.Yu., Mozharov A.M., Sapunov G.A., Fedorov V.V., Moiseev E.I., Blokhin S.A., Kuzmenkov A.G., and Mukhin I.S. "Microwave Schottky diodes based on single GaN nanowires." Technical Physics Letters 48, no. 8 (2022): 18. http://dx.doi.org/10.21883/tpl.2022.08.55053.19229.

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A series of Schottky diodes based on single GaN nanowires has been fabricated. Based on the data of small-signal frequency analysis (parameter S21) of diode structures at various bias voltages, the parameters of the corresponding equivalent electrical circuit were determined. It is shown that the cutoff frequency of the fabricated diodes reaches 27.5 GHz. Keywords: GaN, nanowires, microwave band, Schottky diode.

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4

Polyntsev, Egor, Evgeny Erofeev, and Igor Yunusov. "The Influence of Design on Electrical Performance of AlGaN/GaN Lateral Schottky Barrier Diodes for Energy-Efficient Power Applications." Electronics 10, no. 22 (November 15, 2021): 2802. http://dx.doi.org/10.3390/electronics10222802.

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In this paper, lateral AlGaN/GaN Schottky barrier diodes are investigated in terms of anode construction and diode structure. An original GaN Schottky diode manufacturing-process flow was developed. A set of experiments was carried out to verify dependences between electrical parameters of the diode, such as reverse and forward currents, ON-state voltage, forward voltage and capacitance, anode-to-cathode distance, length of field plate, anode length, Schottky contact material, subanode recess depth, and epitaxial structure type. It was found that diodes of SiN/Al0.23Ga0.77N/GaN epi structure with Ni-based anodes demonstrated two orders of magnitude lower reverse currents than diodes with GaN/Al0.25Ga0.75N/GaN epitaxial structure. Diodes with Ni-based anodes demonstrated lower VON and higher IF compared with diodes with Pt-based anodes. As a result of these investigations, an optimal set of parameters was selected, providing the following electrical characteristics: VON = 0.6 (at IF = 1 mA/mm), forward voltage of the diode VF = 1.6 V (at IF = 100 mA/mm), maximum reverse voltage VR = 300 V, reverse leakage current IR = 0.04 μA/mm (at VR = −200 V), and total capacitance C = 3.6 pF/mm (at f = 1 MHz and 0 V DC bias). Obtained electrical characteristics of the lateral Schottky barrier diode demonstrate great potential for use in energy-efficient power applications, such as 5G multiband and multistandard wireless base stations.

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5

Matys, Maciej, Kazuki Kitagawa, Tetsuo Narita, Tsutomu Uesugi, Jun Suda, and Tetsu Kachi. "Mg-implanted vertical GaN junction barrier Schottky rectifiers with low on resistance, low turn-on voltage, and nearly ideal nondestructive breakdown voltage." Applied Physics Letters 121, no. 20 (November 14, 2022): 203507. http://dx.doi.org/10.1063/5.0106321.

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Vertical GaN junction barrier Schottky (JBS) diodes with superior electrical characteristics and nondestructive breakdown were realized using selective-area p-type doping via Mg ion implantation and subsequent ultra-high-pressure annealing. Mg-ion implantation was performed into a 10 μm thick Si-doped GaN drift layer grown on a free-standing n-type GaN substrate. We fabricated the JBS diodes with different n-type GaN channel widths Ln = 1 and 1.5 μm. The JBS diodes, depending on Ln, exhibited on-resistance ( RON) between 0.57 and 0.67 mΩ cm2, which is a record low value for vertical GaN Schottky barrier diodes (SBDs) and high breakdown (BV) between 660 and 675 V (84.4% of the ideal parallel plane BV). The obtained low RON of JBS diodes can be well explained in terms of the RON model, which includes n-type GaN channel resistance, spreading current effect, and substrate resistance. The reverse leakage current in JBS diodes was relatively low 103–104 times lower than in GaN SBDs. In addition, the JBS diode with lower Ln exhibited the leakage current significantly smaller (up to reverse bias 300 V) than in the JBS diode with large Ln, which was explained in terms of the reduced electric field near the Schottky interface. Furthermore, the JBS diodes showed a very high current density of 5.5 kA/cm2, a low turn-on voltage of 0.74 V, and no destruction against the rapid increase in the reverse current approximately by two orders of magnitude. This work demonstrated that GaN JBS diodes can be strong candidates for low loss power switching applications.

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6

Шугуров, К. Ю., А. М. Можаров, Г. А. Сапунов, В. В. Фёдоров, Э. И. Моисеев, С. А. Блохин, А. Г. Кузьменков, and И. С. Мухин. "Сверхвысокочастотные диоды Шоттки на основе одиночных нитевидных нанокристаллов GaN." Письма в журнал технической физики 48, no. 15 (2022): 22. http://dx.doi.org/10.21883/pjtf.2022.15.53127.19229.

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A series of Schottky diodes based on single GaN nanowires has been fabricated. Based on the data of small-signal frequency analysis (parameter S21) of diode structures at various bias voltages, the parameters of the corresponding equivalent electrical circuit were determined. It is shown that the cutoff frequency of the fabricated diodes reaches 27.5 GHz.

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7

Nomoto, Kazuki, Tohru Nakamura, Naoki Kaneda, Toshihiro Kawano, Tadayoshi Tsuchiya, and Tomoyoshi Mishima. "Large GaN p-n Junction Diodes of 3 mm in Diameter on Free-Standing GaN Substrates with High Breakdown Voltage." Materials Science Forum 717-720 (May 2012): 1299–302. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1299.

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This report describes the first to fabricate GaN p-n junction diodes on free-standing GaN substrates with a 3mm diameter. For the diode of 3 mm in diameter, the specific on-resistance and the breakdown voltage were 124 mΩ•cm2 (at 4.0 V) and -450 V, respectively. Consequently, combination of our material and device processing revealed a record fabricated device size with a high breakdown voltage and low forward leakage current in GaN vertical diodes.

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8

Lee, Wen Zhao, Duu Sheng Ong, Kan Yeep Choo, Oktay Yilmazoglu, and Hans L. Hartnagel. "Monte Carlo evaluation of GaN THz Gunn diodes." Semiconductor Science and Technology 36, no. 12 (November 4, 2021): 125009. http://dx.doi.org/10.1088/1361-6641/ac2b4d.

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Abstract The performances of GaN-based Gunn diodes have been studied extensively for more than two decades, however, the diverging electron drift velocity characteristics employed in these studies merit a review of the potential of GaN Gunn diodes as THz sources. A self-consistent analytical-band Monte Carlo (MC) model capable of reproducing the electron drift velocity characteristics of GaN predicted theoretically by the first-principles full band MC model is used in this work to evaluate systematically the performance of GaN Gunn diodes in transit time mode. The optimal fundamental frequency of a sustainable current oscillation under a DC bias is determined as a function of the length of its transit region. The MC model predicts a GaN Gunn diode with a transit length of 500 nm capable of operating at frequencies up to 625 GHz with an estimated output power of 3.0 W. An MC model takes into account the effect of defects in order to replicate the much lower electron drift velocity characteristics derived from experimental work and predicts THz signal generation of 2.5 W at highest sustainable operating frequency of 326 GHz in a Gunn diode with a transit length of 700 nm.

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9

N’Dohi, Atse Julien Eric, Camille Sonneville, Soufiane Saidi, Thi Huong Ngo, Philippe De Mierry, Eric Frayssinet, Yvon Cordier, et al. "Micro-Raman Spectroscopy Study of Vertical GaN Schottky Diode." Crystals 13, no. 5 (April 22, 2023): 713. http://dx.doi.org/10.3390/cryst13050713.

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In this work, the physical and the electrical properties of vertical GaN Schottky diodes were investigated. Cathodo-luminescence (CL), micro-Raman spectroscopy, SIMS, and current-voltage (I-V) measurements were performed to better understand the effects of physical parameters, for example structural defects and doping level inhomogeneity, on the diode electrical performances. Evidence of dislocations in the diode epilayer was spotted thanks to the CL measurements. Then, using 2D mappings of the E2h and A1 (LO) Raman modes, dislocations and other peculiar structural defects were observed. The I-V measurements of the diodes revealed a significant increase in the leakage current with applied reverse bias up to 200 V. The combination of physical and electrical characterization methods indicated that the electrical leakage in the reverse biased diodes seems more correlated with short range non-uniformities of the effective doping than with strain fluctuation induced by dislocations.

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10

Vostokov N. V., Drozdov M. N., Kraev S. A., Khrykin O. I., and Yunin P. A. "Effect of thermal annealing on the transport properties of Ti/AlGaN/GaN low-barrier Mott diodes." Semiconductors 56, no. 7 (2022): 455. http://dx.doi.org/10.21883/sc.2022.07.54641.04.

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The influence of thermal annealing on the transport properties of Ti/AlGaN/GaN low-barrier Mott diodes with near-surface polarization-induced delta-doping has been studied. It is shown that annealing provides additional possibilities for controlling the effective barrier height of diodes, improving and fine-tuning their transport characteristics. Thermal annealing can be used to fabricate low-barrier diodes designed to operate at high temperatures. Keywords: low-barrier diode, GaN, transport properties, thermal annealing.

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11

Cao, X. A., M. Larsen, H. Lu, and Steve Arthur. "Structural Properties and Electrical Characteristics of Homoepitaxial GaN PiN Diodes." Materials Science Forum 527-529 (October 2006): 1541–44. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1541.

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GaN PiN diodes with a 4 μm Si-doped n--GaN drift layer (n~7×1016 cm-3) were grown on free-standing GaN using metalorganic chemical vapor deposition. Atomic force microscopy showed smooth surfaces with a step structure indicating good 2D growth. The dislocation density and impurity incorporation in the drift layer were remarkably reduced compared to a similar diode structure grown on sapphire. The full width at half maximum of the (0002) rocking curve was 79 arcsec, much smaller than 230 arcsec for the heteroepitaxial structure. The diodes on GaN demonstrated rectification up to –265 V, corresponding to a critical electric field ~2.7×106 V/cm. The maximum value of the figure of merit is ~2.4 MW cm-2, which represents a 2.2× improvement over the diodes on sapphire.

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12

Hierro, A., D. Kwon, S. A. Ringel, M. Hansen, U. K. Mishra, S. P. DenBaars, and J. S. Speck. "Deep levels in n-type Schottky and p+-n homojunction GaN diodes." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 922–28. http://dx.doi.org/10.1557/s1092578300005275.

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The deep level spectra in both p+-n homojunction and n-type Schottky GaN diodes are studied by deep level transient spectroscopy (DLTS) in order to compare the role of the junction configuration on the defects found within the n-GaN layer. Both majority and minority carrier DLTS measurements are performed on the diodes allowing the observation of both electron and hole traps in n-GaN. An electron level at Ec−Et=0.58 and 0.62 V is observed in the p+-n and Schottky diodes, respectively, with a concentration of ∼3−4×1014 cm−3 and a capture cross section of ∼1−5×10−15 cm2. The similar Arrhenius behavior indicates that both emissions are related to the same defect. The shift in activation energy is correlated to the electric field enhanced-emission in the p+-n diode, where the junction barrier is much larger. The p+-n diode configuration allows the observation of a hole trap at Et−Ev=0.87 eV in the n-GaN which is very likely related to the yellow luminescence band.

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13

Krishnamoorthy, Sriram, Digbijoy N. Nath, Fatih Akyol, Pil Sung Park, Michele Esposto, and Siddharth Rajan. "Polarization-engineered GaN/InGaN/GaN tunnel diodes." Applied Physics Letters 97, no. 20 (November 15, 2010): 203502. http://dx.doi.org/10.1063/1.3517481.

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14

Tompkins, R. P., J. R. Smith, S. Zhou, K. W. Kirchner, M. A. Derenge, K. A. Jones, J. H. Leach, et al. "GaN Power Schottky Diodes." ECS Transactions 45, no. 7 (April 27, 2012): 17–25. http://dx.doi.org/10.1149/1.3701521.

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15

Kim, Seongjun, Tae Hoon Seo, Myung Jong Kim, Keun Man Song, Eun-Kyung Suh, and Hyunsoo Kim. "Graphene-GaN Schottky diodes." Nano Research 8, no. 4 (November 28, 2014): 1327–38. http://dx.doi.org/10.1007/s12274-014-0624-7.

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16

Ma, Hao, Xiaoling Duan, Shulong Wang, Shijie Liu, Jincheng Zhang, and Yue Hao. "GaN JBS Diode Device Performance Prediction Method Based on Neural Network." Micromachines 14, no. 1 (January 12, 2023): 188. http://dx.doi.org/10.3390/mi14010188.

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GaN JBS diodes exhibit excellent performance in power electronics. However, device performance is affected by multiple parameters of the P+ region, and the traditional TCAD simulation method is complex and time-consuming. In this study, we used a neural network machine learning method to predict the performance of a GaN JBS diode. First, 3018 groups of sample data composed of device structure and performance parameters were obtained using TCAD tools. The data were then input into the established neural network for training, which could quickly predict the device performance. The final prediction results show that the mean relative errors of the on-state resistance and reverse breakdown voltage are 0.048 and 0.028, respectively. The predicted value has an excellent fitting effect. This method can quickly design GaN JBS diodes with target performance and accelerate research on GaN JBS diode performance prediction.

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17

Bumai, Yurii, Aleh Vaskou, and Valerii Kononenko. "Measurement and Analysis of Thermal Parameters and Efficiency of Laser Heterostructures and Light-Emitting Diodes." Metrology and Measurement Systems 17, no. 1 (January 1, 2010): 39–45. http://dx.doi.org/10.2478/v10178-010-0004-x.

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Measurement and Analysis of Thermal Parameters and Efficiency of Laser Heterostructures and Light-Emitting DiodesA thermal resistance characterization of semiconductor quantum-well heterolasers in the AlGaInAs-AlGaAs system (λst≈ 0.8 μm), GaSb-based laser diodes (λst≈ 2 μm), and power GaN light-emitting diodes (visible spectral region) was performed. The characterization consists in investigations of transient electrical processes in the diode sources under heating by direct current. The time dependence of the heating temperature of the active region of a source ΔT(t), calculated from direct bias change, is analyzed using a thermalRTCTequivalent circuit (the Foster and Cauer models), whereRTis the thermal resistance andCTis the heat capacity of the source elements and external heat sink. By the developed method, thermal resistances of internal elements of the heterolasers and light-emitting diodes are determined. The dominant contribution of a die attach layer to the internal thermal resistance of both heterolaser sources and light-emitting diodes is observed. Based on the performed thermal characterization, the dependence of the optical power efficiency on current for the laser diodes is determined.

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18

Ho, Wen-Chieh, Yao-Hsing Liu, Wen-Hsuan Wu, Sung-Wen Huang Chen, Jerry Tzou, Hao-Chung Kuo, and Chia-Wei Sun. "The Study of High Breakdown Voltage Vertical GaN-on-GaN p-i-n Diode with Modified Mesa Structure." Crystals 10, no. 8 (August 18, 2020): 712. http://dx.doi.org/10.3390/cryst10080712.

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In this paper, we fabricated Gallium Nitride (GaN) vertical p-i-n diodes grown on free-standing GaN (FS-GaN) substrates. This homogeneous epitaxy led to thicker GaN epi-layers grown on the FS-GaN substrate, but a high crystalline quality was maintained. The vertical GaN p-i-n diode showed a low specific on-resistance of 0.85 mΩ-cm2 and high breakdown voltage (BV) of 2.98 kV. The high breakdown voltage can be attributed to the thick GaN epi-layer and corresponds to the mesa structure. Improvement of the device characteristics by the mesa structure was investigated using device simulations. We proved that a deeper mesa depth is able to decrease the electric field at the bottom of the mesa structure. Furthermore, a smaller mesa bevel angle will assist the BV up to 2.98 kV at a 60° bevel angle. Our approach demonstrates structural optimization of GaN vertical p-i-n diodes is useful to improve the device performance.

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19

Tang, Yongjun, Meixin Feng, Jianxun Liu, Shizhao Fan, Xiujian Sun, Qian Sun, Shuming Zhang, et al. "Narrow-Linewidth GaN-on-Si Laser Diode with Slot Gratings." Nanomaterials 11, no. 11 (November 16, 2021): 3092. http://dx.doi.org/10.3390/nano11113092.

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This letter reports room-temperature electrically pumped narrow-linewidth GaN-on-Si laser diodes. Unlike conventional distributed Bragg feedback laser diodes with hundreds of gratings, we employed only a few precisely defined slot gratings to narrow the linewidth and mitigate the negative effects of grating fabrication on the device performance. The slot gratings were incorporated into the ridge of conventional Fabry-Pérot cavity laser diodes. A subsequent wet etching in a tetramethyl ammonium hydroxide solution not only effectively removed the damages induced by the dry etching, but also converted the rough and tilted slot sidewalls into smooth and vertical ones. As a result, the threshold current was reduced by over 20%, and the reverse leakage current was decreased by over three orders of magnitude. Therefore, the room-temperature electrically pumped narrow-linewidth GaN-on-Si laser diode has been successfully demonstrated.

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20

Kuball, M., E. S. Jeon, Y. K. Song, A. V. Nurmikko, P. Kozodoy, A. Abare, S. Keller, et al. "Gain spectroscopy on InGaN/GaN quantum well diodes." Applied Physics Letters 70, no. 19 (May 12, 1997): 2580–82. http://dx.doi.org/10.1063/1.118925.

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21

Su, Xinran. "The Retrospect and Prospect of GaN-Based Schottky Diode." Journal of Physics: Conference Series 2381, no. 1 (December 1, 2022): 012119. http://dx.doi.org/10.1088/1742-6596/2381/1/012119.

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Abstract In the 21st century, with the continuous progress of human society and the continuous upgrading of the integrated circuit industry in recent years, the rapid development of modern science and technology makes us have higher and higher requirements for semiconductor products in our life and production. Compared with the first generation and the second generation of semiconductors, the third generation of semiconductors represented by GaN relies on its high electron mobility, bandgap width, electron saturation speed, high-temperature resistance, radiation resistance, and other suitable material properties. It has more and more extensive application prospects in the research field of microwave high-power devices. Today, the introduction of semiconductors in electronics improves the energy efficiency of equipments and modules. Gallium nitride (GaN) - based schottky diodes have broad application prospects in the next generation of schottky diodes due to their excellent performance. However, because of some technical concerns, these materials have not been fully developed. This work briefly summarized some science and technology related to GaN-Based Schottky Diode. A special focus will be put on the advantages and disadvantages of GaN-Based Schottky Diode, discussing some modern improved designs. Finally, possible breakthroughs of GaN-Based Schottky Diode will be summarized.

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22

Cheng, Liwen, Zhenwei Li, Jiayi Zhang, Xingyu Lin, Da Yang, Haitao Chen, Shudong Wu, and Shun Yao. "Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes." Nanomaterials 11, no. 8 (August 15, 2021): 2070. http://dx.doi.org/10.3390/nano11082070.

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An InGaN laser diode with InGaN–GaN–InGaN delta barriers was designed and investigated numerically. The laser power–current–voltage performance curves, carrier concentrations, current distributions, energy band structures, and non-radiative and stimulated recombination rates in the quantum wells were characterized. The simulations indicate that an InGaN laser diode with InGaN–GaN–InGaN delta barriers has a lower turn-on current, a higher laser power, and a higher slope efficiency than those with InGaN or conventional GaN barriers. These improvements originate from modified energy bands of the laser diodes with InGaN–GaN–InGaN delta barriers, which can suppress electron leakage out of, and enhance hole injection into, the active region.

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23

Sabui, Gourab, Vitaly Z. Zubialevich, Mary White, Pietro Pampili, Peter J. Parbrook, Mathew McLaren, Miryam Arredondo-Arechavala, and Z. John Shen. "GaN Nanowire Schottky Barrier Diodes." IEEE Transactions on Electron Devices 64, no. 5 (May 2017): 2283–90. http://dx.doi.org/10.1109/ted.2017.2679727.

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24

Jiang, Lingrong, Jianping Liu, Aiqin Tian, Yang Cheng, Zengcheng Li, Liqun Zhang, Shuming Zhang, Deyao Li, M. Ikeda, and Hui Yang. "GaN-based green laser diodes." Journal of Semiconductors 37, no. 11 (November 2016): 111001. http://dx.doi.org/10.1088/1674-4926/37/11/111001.

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25

Kim, Jihyun, B. P. Gila, G. Y. Chung, C. R. Abernathy, S. J. Pearton, and F. Ren. "Hydrogen-sensitive GaN Schottky diodes." Solid-State Electronics 47, no. 6 (June 2003): 1069–73. http://dx.doi.org/10.1016/s0038-1101(02)00485-9.

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26

Jin, S. X., J. Li, J. Z. Li, J. Y. Lin, and H. X. Jiang. "GaN microdisk light emitting diodes." Applied Physics Letters 76, no. 5 (January 31, 2000): 631–33. http://dx.doi.org/10.1063/1.125841.

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27

Nagatomo, Takao, and H. Saitou. "Electroluminescence of GaN pn Diodes." Materials Science Forum 264-268 (February 1998): 1429–32. http://dx.doi.org/10.4028/www.scientific.net/msf.264-268.1429.

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28

Miyajima, Takao, Tsuyoshi Tojyo, Takeharu Asano, Katsunori Yanashima, Satoru Kijima, Tomonori Hino, Motonobu Takeya, et al. "GaN-based blue laser diodes." Journal of Physics: Condensed Matter 13, no. 32 (July 26, 2001): 7099–114. http://dx.doi.org/10.1088/0953-8984/13/32/315.

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29

Tan, C. K., Azlan Abdul Aziz, F. K. Yam, C. W. Lim, Hassan Zainuriah, and A. Y. Hudeish. "Effect of Thermal Treatment for Pd and PdSi Schottky Contacts on p-GaN." Materials Science Forum 517 (June 2006): 242–46. http://dx.doi.org/10.4028/www.scientific.net/msf.517.242.

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Pd Schottky diode exhibited stable rectifying behavior up to 500°C for 35 minutes in sequential annealing; with the Schottky barrier heights (SBHs), ΦB (I-V) of 0.6-0.7eV with the leakage current (LC) of 20 A at -5V. With the same range of SBHs, PdSi diodes were stable up to 500°C for 5 minutes with the LC of 0.182mA at -5V. The electrical characteristics obtained in this study are also compared with those obtained for Pd and PdSi Schottky diodes on p-GaN.

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30

Wang, Lei, M. I. Nathan, T‐H Lim, M. A. Khan, and Q. Chen. "High barrier height GaN Schottky diodes: Pt/GaN and Pd/GaN." Applied Physics Letters 68, no. 9 (February 26, 1996): 1267–69. http://dx.doi.org/10.1063/1.115948.

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31

Górecki, Krzysztof, and Paweł Górecki. "Compact electrothermal model of laboratory made GaN Schottky diodes." Microelectronics International 37, no. 2 (January 17, 2020): 95–102. http://dx.doi.org/10.1108/mi-11-2019-0068.

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Purpose The purpose of this paper is to propose a simple electrothermal model of GaN Schottky diodes, and its usefulness for circuit-level electrothermal simulation of laboratory-made devices is proved. Design/methodology/approach The compact electrothermal model of this device has the form of a subcircuit for simulation program with integrated circuit emphasis. This model takes into account influence of a change in ambient temperature in a wide range as well as influence of self-heating phenomena on dc characteristics of laboratory-made GaN Schottky diodes. The method of model parameters estimation is described. Findings It is shown that temperature influences fewer characteristics of GaN Schottky diodes than classical silicon diodes. The discussed model accurately describes properties of laboratory made GaN Schottky diodes. Additionally, the measured and computed characteristics of these diodes are shown and discussed. Research limitations/implications The presented model together with the results of measurements and computations is dedicated only to laboratory-made GaN Schottky diodes. Originality/value The presented investigations show that characteristics of laboratory-made GaN Schottky diodes visibly change with temperature. These changes can be correctly estimated using the compact electrothermal model proposed in this paper. The correctness of this model is proved for four structures of such diodes characterised by different values of structure area and a different assembly process.

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Koike, Masayoshi, Shiro Yamasaki, Yuta Tezen, Seiji Nagai, Sho Iwayama, and Akira Kojima. "Room Temperature CW Operation of GaN-based Blue Laser Diodes by GaInN/GaN optical guiding layers." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 1–7. http://dx.doi.org/10.1557/s1092578300004002.

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GaN-based short wavelength laser diodes are the most promising key device for a digital versatile disk. We have been improving the important points of the laser diodes in terms of optical guiding layers, mirror facets. The continuous wave laser irradiation at room temperature could be achieved successfully by reducing the threshold current to 60 mA (4 kA/cm2). We have tried to apply the multi low temperature buffer layers to the laser diodes for the first time to reduce the crystal defects.

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Rackauskas, B., S. Dalcanale, M. J. Uren, T. Kachi, and M. Kuball. "Leakage mechanisms in GaN-on-GaN vertical pn diodes." Applied Physics Letters 112, no. 23 (June 4, 2018): 233501. http://dx.doi.org/10.1063/1.5033436.

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34

Liu, Xinke, Hong Gu, Kuilong Li, Jianfeng Wang, Lei Wang, Hao-Chung Kuo, Wenjun Liu, et al. "GaN Schottky Barrier Diodes on Free-Standing GaN Wafer." ECS Journal of Solid State Science and Technology 6, no. 10 (2017): N216—N220. http://dx.doi.org/10.1149/2.0261710jss.

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Peri, Prudhvi, Kai Fu, Yuji Zhao, and David J. Smith. "Characterization of Etched and Grown GaN-GaN Schottky Diodes." Microscopy and Microanalysis 25, S2 (August 2019): 2240–41. http://dx.doi.org/10.1017/s1431927619011930.

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36

Khachariya, Dolar, Dennis Szymanski, Pramod Reddy, Erhard Kohn, Zlatko Sitar, Ramón Collazo, and Spyridon Pavlidis. "Schottky contacts to N-polar GaN with SiN interlayer for elevated temperature operation." Applied Physics Letters 120, no. 17 (April 25, 2022): 172109. http://dx.doi.org/10.1063/5.0083588.

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In this Letter, we unveil the high-temperature limits of N-polar GaN Schottky contacts enhanced by a low-pressure chemical vapor deposited (LPCVD) SiN interlayer. Compared to conventional Schottky diodes, the insertion of a 5 nm SiN lossy dielectric interlayer in-between Ni and N-polar GaN increases the turn-on voltage ( VON) from 0.4 to 0.9 V and the barrier height ( ϕB) from 0.4 to 0.8 eV. This modification also reduces the leakage current at zero bias significantly: at room temperature, the leakage current in the conventional Schottky diode is >103 larger than that observed in the device with the SiN interlayer, while at 200 °C, this ratio increases to 105. Thus, the rectification ratio (ION/IOFF) at ±1.5 V reduces to less than one at 250 °C for the conventional Schottky diode, whereas for SiN-coated diodes, rectification continues until 500 °C. The I–V characteristics of the diode with an SiN interlayer can be recovered after exposure to 400 °C or lower. Contact degradation occurs at 500 °C, although devices are not destroyed yet. Here, we report N-polar GaN Schottky contact operation up to 500 °C using an LPCVD SiN interlayer.

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37

Key, Daryl, Edward Letts, Chuan-Wei Tsou, Mi-Hee Ji, Marzieh Bakhtiary-Noodeh, Theeradetch Detchprohm, Shyh-Chiang Shen, Russell Dupuis, and Tadao Hashimoto. "Structural and Electrical Characterization of 2” Ammonothermal Free-Standing GaN Wafers. Progress toward Pilot Production." Materials 12, no. 12 (June 14, 2019): 1925. http://dx.doi.org/10.3390/ma12121925.

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Free-standing gallium nitride (GaN) substrates are in high demand for power devices, laser diodes, and high-power light emitting diodes (LEDs). SixPoint Materials Inc. has begun producing 2” GaN substrates through our proprietary Near Equilibrium AmmonoThermal (NEAT) growth technology. In a single 90 day growth, eleven c-plane GaN boules were grown from free-standing hydride vapor phase epitaxy (HVPE) GaN substrates. The boules had an average X-ray rocking curve full width at half maximum (FWHM) of 33 ± 4 in the 002 reflection and 44 ± 6 in the 201 reflection using 0.3 mm divergence slits. The boules had an average radius of curvature of 10.16 ± 3.63 m. The quality of the boules was highly correlated to the quality of the seeds. A PIN diode grown at Georgia Tech on a NEAT GaN substrate had an ideality factor of 2.08, a high breakdown voltage of 1430 V, and Baliga’s Figure of Merit of >9.2 GW/cm2. These initial results demonstrate the suitability of using NEAT GaN substrates for high-quality MOCVD growth and fabrication of high-power vertical GaN switching devices.

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Deguchi, T., T. Azuhata, T. Sota, S. Chichibu, and S. Nakamura. "Gain spectra in cw InGaN/GaN MQW laser diodes." Materials Science and Engineering: B 50, no. 1-3 (December 1997): 251–55. http://dx.doi.org/10.1016/s0921-5107(97)00186-4.

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39

Mohs, G., T. Aoki, R. Shimano, M. Kuwata-Gonokami, and S. Nakamura. "On the gain mechanism in GaN based laser diodes." Solid State Communications 108, no. 2 (August 1998): 105–9. http://dx.doi.org/10.1016/s0038-1098(98)00309-3.

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40

CHUAH, L. S., Z. HASSAN, H. ABU HASSAN, F. K. YAM, C. W. CHIN, and S. M. THAHAB. "BARRIER HEIGHT ENHANCED GaN SCHOTTKY DIODES USING A THIN AlN SURFACE LAYER." International Journal of Modern Physics B 22, no. 29 (November 20, 2008): 5167–73. http://dx.doi.org/10.1142/s0217979208048711.

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Gallium nitride (GaN) is a highly promising wide band gap semiconductor with applications in high power electronic and optoelectronic devices. Thin films of GaN are most commonly grown in the hexagonal wurtzite structure on sapphire substrates. Growth of GaN onto silicon substrates offers a very attractive opportunity to incorporate GaN devices onto silicon-based integrated circuits. Although direct epitaxial growth of GaN films on Si substrates is a difficult task (mainly due to the 17% lattice mismatch present), substantial progress in the crystal quality can be achieved using a buffer layer. A full characterization of the quality of the material needs to be assessed by a combination of different techniques. In this work, a thin AlN cap layer of 50 nm was incorporated in GaN Schottky diode to enhance the effective Schottky barrier height and reduces the dark current. A barrier height of 0.52 eV for normal GaN Schottky diode was increased to the effective barrier height of 0.63 eV. The resulting Schottky diodes show a dark current of as low as 6.3×10-5 A at 5 V bias, which is about two orders of magnitude lower than that of normal GaN (5.2×10-3 A at 5 V bias) Schottky diode.

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Yatskiv, Roman, Karel Zdansky, and Jan Grym. "Hydrogen Detection with Semimetal Graphite-ZnO (InP,GaN) Schottky Diodes." Key Engineering Materials 543 (March 2013): 159–62. http://dx.doi.org/10.4028/www.scientific.net/kem.543.159.

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We investigated Schottky diode hydrogen sensors prepared by printing colloidal graphite on ZnO, GaN, and InP substrates partly covered with Pt nanoparticles. A layer of Pt nanoparticles deposited by in-situ pulsed electrophoretic deposition from isooctane colloidal solutions was inserted between the semimetal graphite and the semiconductor surface to dissociate hydrogen molecules. Schottky diodes were investigated by the measurement of current-voltage characteristics and further tested for their sensitivity to hydrogen in a cell with a through-flow gas system. The sensing elements were sensitive to gas mixture with a low hydrogen concentration down to 1 ppm.

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Zhou, Yuhao, Qianshu Wu, Qi Zhang, Chengzhang Li, Jinwei Zhang, Zhenxing Liu, Ke Zhang, and Yang Liu. "Numerical analysis of the GaN trench MIS barrier Schottky diodes with high dielectric reliability and surge current capability." AIP Advances 12, no. 6 (June 1, 2022): 065117. http://dx.doi.org/10.1063/5.0098669.

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The commercialization of GaN-based Schottky barrier diodes in middle- and high- voltage applications still faces many challenges, in which the lack of an effective selective area p-type doping method is one of the main obstacles. This paper proposes novel vertical GaN-based Schottky diodes with trench MIS structure and an embedded p-GaN protection layer (junction-trench MIS barrier Schottky diodes, J-TMBS). The trench structure and lateral p-n junctions can be achieved by selectively etching the very thin p-GaN and then regrowing n-GaN. Therefore, the fabrication technology avoids the selective area p-type doping process, and the dry etching damage and poor sidewall regrowth interface issue, which are serious in GaN Merged pn/Schottky (MPS) diodes, can also be alleviated for the proposed J-TMBS. Compared with the optimized GaN trench MIS barrier Schottky (TMBS) diodes, the surge current capability and dielectric reliability of the proposed J-TMBS are significantly improved (the electric field of the dielectric layer and maximum lattice temperature under the surge test can be reduced by 448% and 202%, respectively). In addition, the specific on-resistance ( R on,sp) and breakdown voltage remain basically unchanged compared with TMBS. Compared with the optimized GaN MPS diodes, the proposed structure improves the specific on-resistance by 17.2% benefiting from the reduced area of the JFET region without degrading the reverse I–V characteristics and surge current capability. The proposed J-TMBS exhibits potential in practical high voltage (>600 V) application of GaN Schottky power diodes.

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Hansen, Monica, Paul Fini, Lijie Zhao, Amber Abare, Larry A. Coldren, James S. Speck, and Steven P. DenBaars. "Improved Characteristics of InGaN Multi-Quantum-Well Laser Diodes Grown on Laterally Epitaxially Overgrown GaN on Sapphire." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 8–13. http://dx.doi.org/10.1557/s1092578300004014.

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InGaN multi-quantum-well laser diodes have been fabricated on fully-coalesced laterally epitaxially overgrown (LEO) GaN on sapphire. The laterally overgrown ‘wing’ regions as well as the coalescence fronts contained few or no threading dislocations. Laser diodes fabricated on the low-dislocation-density wing regions showed a reduction in threshold current density from 8 kA/cm2 to 3.7 kA/cm2 compared the those on the high-dislocation ‘window’ regions. Laser diodes also showed a two-fold reduction in threshold current density when comparing those on the wing regions to those fabricated on conventional planar GaN on sapphire. The internal quantum efficiency also improved from 3% for laser diodes on conventional GaN on sapphire to 22% for laser diodes on LEO GaN on sapphire.

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DIDUCK, QUENTIN, IAN WALSH, DUBRAVKO BABIĆ, and LESTER F. EASTMAN. "NOVEL HIGH TEMPERATURE ANNEALED SCHOTTKY METAL FOR GaN DEVICES." International Journal of High Speed Electronics and Systems 20, no. 03 (September 2011): 417–22. http://dx.doi.org/10.1142/s0129156411006702.

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We have found that Scandium metal is near ohmic as deposited on GaN , but when it is annealed at high temperatures a large barrier height Schottky forms. In this study we used Sc - Au contacts to form Schottky barrier diodes on AlGaN / GaN HEMT material. We have found that the morphology remains unchanged even after an 800 degrees centigrade anneal. This investigation has revealed that the reverse leakage current of this metal system is an order of magnitude lower than a conventional Ni - Au contact and supports a reverse breakdown that is 1/3rd larger. The similarity of the anneal temperatures to ohmic contacts enable gates and contacts to be annealed at the same time thus simplifying processing. The lack of morphology change supports the use of Sc - Au for E -beam alignment marks as well. Diode contacts on AlGaN / GaN with Schottky-ohmic separation of 10 microns demonstrated reverse breakdown in excess of 100V when the contacts were annealed at 800C. These results suggest this metallization may have applications as a new HEMT gate metal, and Schottky diodes.

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45

Panda, Pranati, Satya Narayan Padhi, and Gana Nath Dash. "Comparative Assessment of GaN as a Microwave Source with Si and SiC for Mixed Mode Operation at Submillimetre Wave Band of Frequency." International Journal of Microwave Science and Technology 2016 (February 14, 2016): 1–9. http://dx.doi.org/10.1155/2016/4370345.

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The potentials of GaN, SiC, and Si for application as microwave sources in mixed tunnelling avalanche transit time mode operation at submillimetre wave (sub-mm wave) frequency around 0.35 terahertz (THz) are investigated using some computer simulation methods. Design criteria to choose width, doping concentration, and area are highlighted. From the results of our simulation we observed that the Si diode produces the least power output of 41 mW followed by the GaN diode with 760 mW and the SiC diode with 2.89 W. In addition, the GaN diode has more noise than the SiC diode (by 5 dB) as well as the Si diode (by 10 dB). The drastically different performance between the GaN and the SiC diode is attributed to the incorporation of disparate carrier velocity in GaN which were not being used by other authors. In spite of the low power and high noise of the GaN compared to the SiC diode, the presence of several peaks in the mean square noise voltage curves and the existence of several minima in the noise measure curves would open a new direction in the design of GaN low-noise ATT diodes capable of multifrequency tuning like a DAR diode.

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46

Hatakoshi, Gen-ichi, Masaaki Onomura, Masahiro Yamamoto, Shin-ya Nunoue, Kazuhiko Itaya, and Masayuki Ishikawa. "Thermal Analysis for GaN Laser Diodes." Japanese Journal of Applied Physics 38, Part 1, No. 5A (May 15, 1999): 2764–68. http://dx.doi.org/10.1143/jjap.38.2764.

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Yang, Hui, L. X. Zheng, J. B. Li, X. J. Wang, D. P. Xu, Y. T. Wang, X. W. Hu, and P. D. Han. "Cubic-phase GaN light-emitting diodes." Applied Physics Letters 74, no. 17 (April 26, 1999): 2498–500. http://dx.doi.org/10.1063/1.123019.

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48

Koehler, Andrew D., Travis J. Anderson, Marko J. Tadjer, Anindya Nath, Boris N. Feigelson, David I. Shahin, Karl D. Hobart, and Francis J. Kub. "Vertical GaN Junction Barrier Schottky Diodes." ECS Journal of Solid State Science and Technology 6, no. 1 (December 14, 2016): Q10—Q12. http://dx.doi.org/10.1149/2.0041701jss.

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49

Mohammad, S. N., Z. Fan, A. E. Botchkarev, W. Kim, O. Aktas, A. Salvador, and H. Morkoç. "Near-ideal platinum-GaN Schottky diodes." Electronics Letters 32, no. 6 (1996): 598. http://dx.doi.org/10.1049/el:19960354.

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50

Kizilyalli, Isik C., Andrew P. Edwards, Hui Nie, Dave Bour, Thomas Prunty, and Don Disney. "3.7 kV Vertical GaN PN Diodes." IEEE Electron Device Letters 35, no. 2 (February 2014): 247–49. http://dx.doi.org/10.1109/led.2013.2294175.

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