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Books on the topic 'GaAs solar cells'

Author: Grafiati

Published: 6 September 2023

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1

P, Leon Rosa, Arrison Anne, and United States. National Aeronautics and Space Administration., eds. A V-grooved AlGaAs/GaAs passivated PN junction. [Washington, DC]: National Aeronautics and Space Administration, 1987.

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2

P, Leon Rosa, Arrison Anne, and United States. National Aeronautics and Space Administration., eds. A V-grooved AlGaAs/GaAs passivated PN junction. [Washington, DC]: National Aeronautics and Space Administration, 1987.

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3

United States. National Aeronautics and Space Administration., ed. GaAs solar cell radiation handbook. Pasadena, Calif: National Aeronautics and Space Administration, Jet Propulsion Laboratory, California Institute of Technology, 1996.

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4

United States. National Aeronautics and Space Administration., ed. GaAs solar cell radiation handbook. Pasadena, Calif: National Aeronautics and Space Administration, Jet Propulsion Laboratory, California Institute of Technology, 1996.

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5

Jet Propulsion Laboratory (U.S.), ed. GaAs solar cell radiation handbook. Pasadena, Calif: National Aeronautics and Space Administration, Jet Propulsion Laboratory, California Institute of Technology, 1996.

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6

Jet Propulsion Laboratory (U.S.), ed. GaAs solar cell radiation handbook. Pasadena, Calif: National Aeronautics and Space Administration, Jet Propulsion Laboratory, California Institute of Technology, 1996.

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7

Weinberg, Irving. Heteroepitaxial InP solar cells on Si and GaAs substrates. [Washington, DC]: National Aeronautics and Space Administration, 1991.

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8

A, Scheiman David, Brinker David J, and Lewis Research Center, eds. GaAs/Ge solar powered aircraft. [Cleveland, Ohio]: National Aeronautics and Space Administration, Lewis Research Center, 1998.

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9

A, Scheiman David, Brinker David J, and Lewis Research Center, eds. GaAs/Ge solar powered aircraft. [Cleveland, Ohio]: National Aeronautics and Space Administration, Lewis Research Center, 1998.

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10

G, Bailey Sheila, and United States. National Aeronautics and Space Administration., eds. The GaAs solar cells with V-grooved emitters. [Washington, DC]: National Aeronautics and Space Administration, 1989.

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11

M, Wilt David, and United States. National Aeronautics and Space Administration., eds. Peeled film GaAs solar cells for space power. [Washington, DC]: National Aeronautics and Space Administration, 1990.

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12

Jet Propulsion Laboratory (U.S.), ed. Characterization of production GaAs solar cells for space. Pasadena, Calif: National Aeronautics and Space Administration, Jet Propulsion Laboratory, California Institute of Technology, 1988.

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13

Jet Propulsion Laboratory (U.S.), ed. Characterization of production GaAs solar cells for space. Pasadena, Calif: National Aeronautics and Space Administration, Jet Propulsion Laboratory, California Institute of Technology, 1988.

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14

K, Jain R. Estimation of minority carrier diffusion lengths in InP/GaAs solar cells. [Washington, D.C.]: National Aeronautics and Space Administration, 1990.

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15

United States. National Aeronautics and Space Administration., ed. Enhancing optical absorption in InP and GaAs utilizing profile etching. [Washington, DC]: National Aeronautics and Space Administration, 1991.

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16

Curtis, Henry B. Performance of GaAs and silicon concentrator cells under 37 MeV proton irradiation. [Washington, DC]: National Aeronautics and Space Administration, 1988.

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17

Curtis, Henry B. Performance of GaAs and silicon concentrator cells under 37 MeV proton irradiation. [Washington, DC]: National Aeronautics and Space Administration, 1988.

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18

Weinberg, Irving. Performance and temperature dependencies of proton irradiated n/p and p/n GaAs and n/p silicon cells. [Washington, DC]: National Aeronautics and Space Administration, 1985.

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19

Crnatovic, Aleksandar. LPE grown GaAs[1-x]P[x]GaP / top cells for high-efficiency tandem solar cells. Ottawa: National Library of Canada, 1995.

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20

Weinberg, Irving. Effects of electron and proton irradiations on n/p and p/n GaAs cells grown by MOCVD. [Washington, D.C.]: National Aeronautics and Space Administration, 1987.

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21

G, Bailey Sheila, and United States. National Aeronautics and Space Administration., eds. A V-grooved GaAs solar cell. [Washington, DC]: National Aeronautics and Space Administration, 1989.

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22

G, Bailey Sheila, and United States. National Aeronautics and Space Administration., eds. A V-grooved GaAs solar cell. [Washington, DC]: National Aeronautics and Space Administration, 1989.

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23

G, Bailey Sheila, and United States. National Aeronautics and Space Administration., eds. A V-grooved GaAs solar cell. [Washington, DC]: National Aeronautics and Space Administration, 1989.

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24

A V-grooved AlGaAs/GaAs passivated PN junction. [Washington, DC]: National Aeronautics and Space Administration, 1987.

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25

"High efficiency floating junction GaAs solar cell for space applications": Phase I final report. [Washington, DC: National Aeronautics and Space Administration, 1996.

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26

Kamdar, Pravin P. Numerical simulation of Al [subscript x] Ga [subscript 1-x] As/GaAs and (Al [subscript x] Ga [subscript 1-x]) [subscript 0.47] In [subscript 0.53] As/InP bandgap engineered solar cells. 1990.

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27

Rai, Dibya Prakash, ed. Advanced Materials and Nano Systems: Theory and Experiment - Part 2. BENTHAM SCIENCE PUBLISHERS, 2022. http://dx.doi.org/10.2174/97898150499611220201.

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Abstract:

The discovery of new materials and the manipulation of their exotic properties for device fabrication is crucial for advancing technology. Nanoscience, and the creation of nanomaterials have taken materials science and electronics to new heights for the benefit of mankind. Advanced Materials and Nanosystems: Theory and Experiment covers several topics of nanoscience research. The compiled chapters aim to update students, teachers, and scientists by highlighting modern developments in materials science theory and experiments. The significant role of new materials in future technology is also demonstrated. The book serves as a reference for curriculum development in technical institutions and research programs in the field of physics, chemistry and applied areas of science like materials science, chemical engineering and electronics. This part covers 12 topics in these areas: 1. Recent advancements in nanotechnology: a human health Perspective 2. An exploratory study on characteristics of SWIRL of AlGaAs/GaAs in advanced bio based nanotechnological systems 3. Electronic structure of the half-Heusler ScAuSn, LuAuSn and their superlattice 4. Recent trends in nanosystems 5. Improvement of performance of single and multicrystalline silicon solar cell using low-temperature surface passivation layer and antireflection coating 6. Advanced materials and nanosystems 7. Effect of nanostructure-materials on optical properties of some rare earth ions doped in silica matrix 8. Nd2Fe14B and SmCO5: a permanent magnet for magnetic data storage and data transfer technology 9. Visible light induced photocatalytic activity of MWCNTS decorated sulfide based nano photocatalysts 10. Organic solar cells 11. Neodymium doped lithium borosilicate glasses 12. Comprehensive quantum mechanical study of structural features, reactivity, molecular properties and wave function-based characteristics of capmatinib

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28

Gomula, Joanna. Introductory Note. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780190923846.003.0018.

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In 2016, panel and Appellate Body reports were adopted in seven disputes. The majority of the disputes concerned general obligations under two basic WTO agreements: the General Agreement on Tariffs and Trade of 1994 (GATT 1994) and the General Agreement on Trade in Services (GATS). Therefore, the 2016 reports provide valuable analytical resources on basic GATT and GATS concepts, and the respective general exceptions clauses. The other disputes concerned anti-dumping and countervailing duty measures. Two disputes involving Latin American states related to measures imposed in order to combat money laundering and tax evasion, and raised the question of whether GATT tariff obligations apply to “illicit trade”. Two other disputes related to the use of green energy, including the promotion of solar cells and modules, and anti-dumping duties on imports of biodiesel.

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29

Krauter, Stefan C. W. Solar Electric Power Generation - Photovoltaic Energy Systems: Modeling of Optical and Thermal Performance, Electrical Yield, Energy Balance, Effect on Reduction of Greenhouse Gas Emissions. Springer, 2006.

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30

Wolf, E. L. Atoms, Molecules, Crystals and Semiconductor Devices. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198769804.003.0005.

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Properties of matter and of electronic devices are described, starting with Bohr’s model of the hydrogen atom. Motion of electrons in a periodic potential is shown to allow energy ranges with free motion separated by energy ranges where no propagating states are possible. Metals and semiconductors are described via Schrodinger’s equation in terms of their structure and their electrical properties. Energy gaps and effective masses are described. The semiconductor pn junction is described as a circuit element and as a photovoltaic device. We now extend Schrodinger’s method to more familiar matter, in the form of atoms, molecules and semiconductors. The solar cell, that produces electrical energy from Sunlight, in fact requires a sophisticated understanding of the semiconductor PN junction.

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