Journal articles on the topic 'GaAs Schottky diodes'
Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles
Consult the top 50 journal articles for your research on the topic 'GaAs Schottky diodes.'
Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.
You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.
Browse journal articles on a wide variety of disciplines and organise your bibliography correctly.
Liu, Hai Rui, and Jun Sheng Yu. "Characterization of Metal-Semiconductor Schottky Diodes and Application on THz Detection." Advanced Materials Research 683 (April 2013): 729–32. http://dx.doi.org/10.4028/www.scientific.net/amr.683.729.
Ozdemir, Ahmet Faruk, Adnan Calik, Guven Cankaya, Osman Sahin, and Nazim Ucar. "Effect of Indentation on I-V Characteristics of Au/n-GaAs Schottky Barrier Diodes." Zeitschrift für Naturforschung A 63, no. 3-4 (April 1, 2008): 199–202. http://dx.doi.org/10.1515/zna-2008-3-414.
Weikle, Robert M., S. Nadri, C. M. Moore, N. D. Sauber, L. Xie, M. E. Cyberey, N. Scott Barker, A. W. Lichtenberger, and M. Zebarjadi. "Thermal Characterization of Quasi-Vertical GaAs Schottky Diodes Integrated on Silicon Using Thermoreflectance and Electrical Transient Measurements." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2019, DPC (January 1, 2019): 001293–310. http://dx.doi.org/10.4071/2380-4491-2019-dpc-presentation_tha3_009.
Klyuev, Alexey V., Arkady V. Yakimov, and Irene S. Zhukova. "1/f Noise in Ti–Au/n-Type GaAs Schottky Barrier Diodes." Fluctuation and Noise Letters 14, no. 03 (June 29, 2015): 1550029. http://dx.doi.org/10.1142/s0219477515500297.
Powell, J. R., Colin Viegas, Hoshiar Singh Sanghera, P. G. Huggard, and Byron Alderman. "Comparing Novel MMIC and Hybrid Circuit High Efficiency GaAs Schottky Diode mm-Wave Frequency Doublers." Electronics 9, no. 10 (October 19, 2020): 1718. http://dx.doi.org/10.3390/electronics9101718.
Liu, Yang, Bo Zhang, Yinian Feng, Xiaolin Lv, Dongfeng Ji, Zhongqian Niu, Yilin Yang, Xiangyang Zhao, and Yong Fan. "Development of 340-GHz Transceiver Front End Based on GaAs Monolithic Integration Technology for THz Active Imaging Array." Applied Sciences 10, no. 21 (November 9, 2020): 7924. http://dx.doi.org/10.3390/app10217924.
KAHVECI, OSMAN, ABDULLAH AKKAYA, ENISE AYYILDIZ, and ABDÜLMECIT TÜRÜT. "COMPARISON OF THE Ti/n-GaAs SCHOTTKY CONTACTS’ PARAMETERS FABRICATED USING DC MAGNETRON SPUTTERING AND THERMAL EVAPORATION." Surface Review and Letters 24, no. 04 (August 10, 2016): 1750047. http://dx.doi.org/10.1142/s0218625x17500470.
YILDIRIM, N., H. DOGAN, H. KORKUT, and A. TURUT. "DEPENDENCE OF CHARACTERISTIC DIODE PARAMETERS IN Ni/n-GaAs CONTACTS ON THERMAL ANNEALING AND SAMPLE TEMPERATURE." International Journal of Modern Physics B 23, no. 27 (October 30, 2009): 5237–49. http://dx.doi.org/10.1142/s0217979209053564.
Gromov, Dmitry, and Vadim Elesin. "Long-term radiation effects in GaAs microwave devices exposed to pulsed ionizing radiation." ITM Web of Conferences 30 (2019): 10005. http://dx.doi.org/10.1051/itmconf/20193010005.
CROWE, THOMAS W., ROBERT J. MATTAUCH, ROBERT M. WEIKLE, and UDAYAN V. BHAPKAR. "TERAHERTZ GaAs DEVICES AND CIRCUITS FOR HETERODYNE RECEIVER APPLICATIONS." International Journal of High Speed Electronics and Systems 06, no. 01 (March 1995): 125–61. http://dx.doi.org/10.1142/s0129156495000043.
Vittone, E., P. Olivero, F. Nava, C. Manfredotti, A. Lo Giudice, F. Fizzotti, and G. Egeni. "Lateral IBIC analysis of GaAs Schottky diodes." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 231, no. 1-4 (April 2005): 513–17. http://dx.doi.org/10.1016/j.nimb.2005.01.109.
Shi, Z. Q., and W. A. Anderson. "Cryogenic processing of metal/GaAs schottky diodes." Solid-State Electronics 35, no. 10 (October 1992): 1427–32. http://dx.doi.org/10.1016/0038-1101(92)90078-q.
Konishi, Y., S. T. Allen, M. Reddy, M. J. W. Rodwell, R. P. Smith, and J. Liu. "AlAs/GaAs Schottky-collector resonant-tunnel-diodes." Solid-State Electronics 36, no. 12 (December 1993): 1673–76. http://dx.doi.org/10.1016/0038-1101(93)90212-9.
Pham, Q. P., W. M. Kelly, P. Maaskant, and J. O'Brien. "High reliability sputtered Schottky diodes on GaAs." International Journal of Infrared and Millimeter Waves 12, no. 1 (January 1991): 23–31. http://dx.doi.org/10.1007/bf01041880.
Park, Il-Yong, and Yearn-Ik Choi. "Analytic Breakdown Modeling for GaAs Schottky Diodes." Physica Scripta T79, no. 1 (1999): 314. http://dx.doi.org/10.1238/physica.topical.079a00314.
Crowe, T. W., R. J. Mattauch, H. P. Roser, W. L. Bishop, W. C. B. Peatman, and X. Liu. "GaAs Schottky diodes for THz mixing applications." Proceedings of the IEEE 80, no. 11 (1992): 1827–41. http://dx.doi.org/10.1109/5.175258.
Palmour, John W. "Energy Efficiency: The Commercial Pull for SiC Devices." Materials Science Forum 527-529 (October 2006): 1129–34. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1129.
Tan, Shih-Wei, and Shih-Wen Lai. "A Current Transport Mechanism on the Surface of Pd-SiO2Mixture for Metal-Semiconductor-Metal GaAs Diodes." Advances in Materials Science and Engineering 2013 (2013): 1–4. http://dx.doi.org/10.1155/2013/531573.
Ведь, М. В., М. В. Дорохин, B. П. Лесников, Д. А. Павлов, Ю. В. Усов, А. В. Кудрин, П. Б. Дёмина, А. В. Здоровейщев, and Ю. А. Данилов. "Диодные структуры на основе магнитных гетеропереходов (In, Fe)Sb/GaAs." Письма в журнал технической физики 45, no. 13 (2019): 33. http://dx.doi.org/10.21883/pjtf.2019.13.47955.17812.
Wang, Xiaolei, Xupeng Sun, Shuainan Cui, Qianqian Yang, Tianrui Zhai, Jinliang Zhao, Jinxiang Deng, and Antonio Ruotolo. "Physical Investigations on Bias-Free, Photo-Induced Hall Sensors Based on Pt/GaAs and Pt/Si Schottky Junctions." Sensors 21, no. 9 (April 25, 2021): 3009. http://dx.doi.org/10.3390/s21093009.
Lakhdari, Issam, Nouredine Sengouga, Madani Labed, Toufik Tibermacine, Riaz Mari, and Mohamed Henini. "Schottky contact diameter effect on the electrical properties and interface states of Ti/Au/p-AlGaAs/GaAs/Au/Ni/Au Be-doped p-type MBE Schottky diodes." Semiconductor Science and Technology 37, no. 5 (April 13, 2022): 055022. http://dx.doi.org/10.1088/1361-6641/ac612a.
Fischler, W., P. Buchberger, R. A. Höpfel, and G. Zandler. "Ultrafast reflectivity changes in photoexcited GaAs Schottky diodes." Applied Physics Letters 68, no. 20 (May 13, 1996): 2778–80. http://dx.doi.org/10.1063/1.116604.
Ashkinazi, G., B. Meyler, M. Nathan, L. Zolotarevski, and O. Zolotarevski. "Breakdown voltage of high-voltage GaAs Schottky diodes." Solid-State Electronics 36, no. 12 (December 1993): 1793–94. http://dx.doi.org/10.1016/0038-1101(93)90229-j.
Adams, J. G., A. Jelenski, D. H. Navon, and Ting-Wei Tang. "Numerical analysis of GaAs epitaxial-layer Schottky diodes." IEEE Transactions on Electron Devices 34, no. 9 (September 1987): 1963–70. http://dx.doi.org/10.1109/t-ed.1987.23182.
Crowe, T. W., and R. J. Mattauch. "Conversion Loss in GaAs Schottky-Barrier Mixer Diodes." IEEE Transactions on Microwave Theory and Techniques 34, no. 7 (July 1986): 753–60. http://dx.doi.org/10.1109/tmtt.1986.1133437.
Sharda, H., K. Prasad, L. Faraone, and A. G. Nassibian. "Annealing studies on Pd/n-GaAs Schottky diodes." Semiconductor Science and Technology 6, no. 8 (August 1, 1991): 765–70. http://dx.doi.org/10.1088/0268-1242/6/8/009.
Paccagnella, A., A. Callegari, E. Latta, and M. Gasser. "Schottky diodes on hydrogen plasma treatedn‐GaAs surfaces." Applied Physics Letters 55, no. 3 (July 17, 1989): 259–61. http://dx.doi.org/10.1063/1.101922.
Yasuoka, Yoshizumi, Hiromitsu Takao, and Narumi Inoue. "Fabrication of sub-0.5-micron GaAs Schottky diodes." Microelectronic Engineering 11, no. 1-4 (April 1990): 101–4. http://dx.doi.org/10.1016/0167-9317(90)90081-4.
Gao, Xian, Ji Long Tang, Dan Fang, Fang Chen, Shuang Peng Wang, Hai Feng Zhao, Xuan Fang, et al. "The Electrical Characteristics of GaAs-MgO Interfaces of GaAs MIS Schottky Diodes." Advanced Materials Research 1118 (July 2015): 270–75. http://dx.doi.org/10.4028/www.scientific.net/amr.1118.270.
Martinez Gil, Javier, Diego Moro-Melgar, Artur Negrus, Ion Oprea, and Oleg Cojocari. "Efficiency Assessment of Traditional GaAs and Low-Power InGaAs Schottky Diodes in Full-Band Mixers at 0.3 THz." Electronics 12, no. 21 (November 3, 2023): 4518. http://dx.doi.org/10.3390/electronics12214518.
Klyuev, Alexey V., and Arkady V. Yakimov. "Investigation of 1/f Noise and Superimposed RTS Noise in Ti–Au/n-Type GaAs Schottky Barrier Diodes." Fluctuation and Noise Letters 14, no. 04 (November 9, 2015): 1550041. http://dx.doi.org/10.1142/s0219477515500418.
Prikhodko, A., I. Belikov, D. Mikhailov, A. Shurakov, and G. Goltsman. "Towards multipixel THz Schottky diode detector with a single RF output line." Journal of Physics: Conference Series 2086, no. 1 (December 1, 2021): 012063. http://dx.doi.org/10.1088/1742-6596/2086/1/012063.
Uchida, Yoko, Tatsuo Yokotsuka, Hisao Nakashima, and Shinichiro Takatani. "Electrical properties of thermally stable LaB6/GaAs Schottky diodes." Applied Physics Letters 50, no. 11 (March 16, 1987): 670–72. http://dx.doi.org/10.1063/1.98061.
Arakaki, Hisashi, Kazutoshi Ohashi, and Tomoko Sudou. "Sputter-induced defects in Zn-doped GaAs Schottky diodes." Semiconductor Science and Technology 19, no. 1 (October 30, 2003): 127–32. http://dx.doi.org/10.1088/0268-1242/19/1/021.
Zaidi, S. H., and A. K. Jonscher. "Spectroscopy of delayed electronic transitions in GaAs Schottky diodes." Semiconductor Science and Technology 2, no. 9 (September 1, 1987): 587–96. http://dx.doi.org/10.1088/0268-1242/2/9/005.
Lalinský, T., D. Gregušová, Ž. Mozolová, J. Breza, and P. Vogrinčič. "High‐temperature stable Ir‐Al/n‐GaAs Schottky diodes." Applied Physics Letters 64, no. 14 (April 4, 1994): 1818–20. http://dx.doi.org/10.1063/1.111988.
Lechuga, L. M., A. Calle, D. Golmayo, and F. Briones. "The ammonia sensitivity of Pt/GaAs Schottky barrier diodes." Journal of Applied Physics 70, no. 6 (September 15, 1991): 3348–54. http://dx.doi.org/10.1063/1.349270.
Shepherd, P. R., and M. J. Cryan. "Schottky diodes for analogue phase shifters in GaAs MMICs." IEEE Transactions on Microwave Theory and Techniques 44, no. 11 (1996): 2112–16. http://dx.doi.org/10.1109/22.543970.
Svensson, Stefan P. "Al–Ga–GaAs multimetal Schottky diodes prepared by MBE." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 3, no. 2 (March 1985): 760. http://dx.doi.org/10.1116/1.583137.
St. Jean, C. A., W. L. Bishop, B. K. Sarpong, S. M. Marazita, and T. W. Crowe. "Novel fabrication of Ti-Pt-Au/GaAs Schottky diodes." IEEE Transactions on Electron Devices 47, no. 7 (July 2000): 1465–68. http://dx.doi.org/10.1109/16.848293.
Röser, H. P., H. W. Hübers, T. W. Crowe, and W. C. B. Peatman. "Nanostructure GaAS Schottky diodes for far-infrared heterodyne receivers." Infrared Physics & Technology 35, no. 2-3 (March 1994): 451–62. http://dx.doi.org/10.1016/1350-4495(94)90102-3.
Vearey-Roberts, A. R., and D. A. Evans. "Modification of GaAs Schottky diodes by thin organic interlayers." Applied Physics Letters 86, no. 7 (2005): 072105. http://dx.doi.org/10.1063/1.1864255.
Von Roos, O., and Ke-Li Wang. "Conversion Losses in GaAs Schottky-Barrier Diodes (Short Paper)." IEEE Transactions on Microwave Theory and Techniques 34, no. 1 (January 1986): 183–88. http://dx.doi.org/10.1109/tmtt.1986.1133301.
Eftekhari, G. "Electrical characteristics of selenium-treated GaAs MIS Schottky diodes." Semiconductor Science and Technology 8, no. 3 (March 1, 1993): 409–11. http://dx.doi.org/10.1088/0268-1242/8/3/018.
Lin, Chia-Chien, and Meng-Chyi Wu. "Electrical and structural properties of Re/GaAs Schottky diodes." Journal of Applied Physics 85, no. 7 (April 1999): 3893–96. http://dx.doi.org/10.1063/1.369777.
Zheng, Renzhou, Jingbin Lu, Xiaoyi Li, Yu Wang, Yumin Liu, Xu Xu, Ziyi Chen, and Xue Zhang. "Optimization design of GaAs-based betavoltaic batteries with p–n junction and Schottky barrier structures." Journal of Physics D: Applied Physics 55, no. 19 (February 16, 2022): 194003. http://dx.doi.org/10.1088/1361-6463/ac526a.
YILDIRIM, NEZIR, ABDULMECIT TURUT, and HULYA DOGAN. "CURRENT–VOLTAGE CHARACTERISTICS OF THERMALLY ANNEALED Ni/n-GaAs SCHOTTKY CONTACTS." Surface Review and Letters 25, no. 04 (May 11, 2018): 1850082. http://dx.doi.org/10.1142/s0218625x18500828.
Ismail, A., J. M. Palau, E. Vieujot, and L. Lassabatere. "Electron beam effect on GaAs real surfaces and on Ag-GaAs Schottky diodes." Surface Science Letters 157, no. 2-3 (July 1985): A386. http://dx.doi.org/10.1016/0167-2584(85)91097-7.
Ismail, A., J. M. Palau, E. Vieujot, and L. Lassabatere. "Electron beam effect on GaAs real surfaces and on AgGaAs schottky diodes." Surface Science 157, no. 2-3 (July 1985): 319–26. http://dx.doi.org/10.1016/0039-6028(85)90675-2.
Schmutzler, H. J., W. Platen, D. Kohl, and K. Wolter. "Process Dependent Interface States of Ag/(110)GaAs Schottky Diodes." Materials Science Forum 38-41 (January 1991): 1409–14. http://dx.doi.org/10.4028/www.scientific.net/msf.38-41.1409.