Log in

Relevant bibliographies by topics / Ga)Se2 / Journal articles

To see the other types of publications on this topic, follow the link: Ga)Se2.

Journal articles on the topic 'Ga)Se2'

Author: Grafiati

Published: 4 June 2021

Last updated: 13 February 2022

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the top 50 journal articles for your research on the topic 'Ga)Se2.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Browse journal articles on a wide variety of disciplines and organise your bibliography correctly.

1

Бородавченко, О. М., В. Д. Живулько, А. В. Мудрый, М. В. Якушев, and И. А. Могильников. "Излучательная рекомбинация на ионно-индуцированных дефектах в тонких пленках твердых растворов Cu(In, Ga)Se-=SUB=-2-=/SUB=-." Физика и техника полупроводников 55, no. 2 (2021): 127. http://dx.doi.org/10.21883/ftp.2021.02.50497.9532.

Full text

Abstract:

In thin films of Cu(In,Ga)Se2 solid solutions radiation-induced effects after irradiation of hydrogen ions with an energy of 2.5, 5 and 10 keV with dose of ~ 3∙10^15 cm-2 were studied. A comparative analysis of the optical characteristics of non-implanted and implanted Cu(In,Ga)Se2 thin films was carried out based on the measurements of photoluminescence spectra and the luminescence excitation spectra at liquid helium temperature of ~ 4.2 K. The bandgap of Cu(In,Ga)Se2 solid solutions determined from the data of mathematical processing of the luminescence excitation spectra was ~ 1.171 eV. An intense band with a maximum of ~ 1.089 eV was found in the photoluminescence spectra of non-implanted and hydrogen-implanted Cu(In,Ga)Se2 thin films caused by the recombination of free electrons with holes localized in the tails of the valence band. It was established that appearance of intense broad bands in the photoluminescence spectra with maxima in the energy range of ~ 0.92 eV and ~ 0.77 eV is due to radiative recombination of nonequilibrium charge carriers at deep energy levels of acceptor type ion-induced defects formed in the bandgap of Cu(In,Ga)Se2 solid solutions. The conditions for the appearance of the ionic passivation effect of dangling electronic bonds on the surface and in the bulk of Cu(In,Ga)Se2 polycrystalline films, possible nature of point defects in the structure and the mechanisms of radiative recombination are discussed.

APA, Harvard, Vancouver, ISO, and other styles

2

Gonçalves, Bruna F., Alec P. LaGrow, Sergey Pyrlin, Bryan Owens-Baird, Gabriela Botelho, Luis S. A. Marques, Marta M. D. Ramos, Kirill Kovnir, Senentxu Lanceros-Mendez, and Yury V. Kolen’ko. "Large-Scale Synthesis of Semiconducting Cu(In,Ga)Se2 Nanoparticles for Screen Printing Application." Nanomaterials 11, no. 5 (April 28, 2021): 1148. http://dx.doi.org/10.3390/nano11051148.

Full text

Abstract:

During the last few decades, the interest over chalcopyrite and related photovoltaics has been growing due the outstanding structural and electrical properties of the thin-film Cu(In,Ga)Se2 photoabsorber. More recently, thin film deposition through solution processing has gained increasing attention from the industry, due to the potential low-cost and high-throughput production. To this end, the elimination of the selenization procedure in the synthesis of Cu(In,Ga)Se2 nanoparticles with following dispersion into ink formulations for printing/coating deposition processes are of high relevance. However, most of the reported syntheses procedures give access to tetragonal chalcopyrite Cu(In,Ga)Se2 nanoparticles, whereas methods to obtain other structures are scarce. Herein, we report a large-scale synthesis of high-quality Cu(In,Ga)Se2 nanoparticles with wurtzite hexagonal structure, with sizes of 10–70 nm, wide absorption in visible to near-infrared regions, and [Cu]/[In + Ga] ≈ 0.8 and [Ga]/[Ga + In] ≈ 0.3 metal ratios. The inclusion of the synthesized NPs into a water-based ink formulation for screen printing deposition results in thin films with homogenous thickness of ≈4.5 µm, paving the way towards environmentally friendly roll-to-roll production of photovoltaic systems.

APA, Harvard, Vancouver, ISO, and other styles

3

Nishiwaki, S., T. Satoh, S. Hayashi, Y. Hashimoto, T. Negami, and T. Wada. "Preparation of Cu(In,Ga)Se2 thin films from In–Ga–Se precursors for high-efficiency solar cells." Journal of Materials Research 14, no. 12 (December 1999): 4514–20. http://dx.doi.org/10.1557/jmr.1999.0613.

Full text

Abstract:

Growth of Cu(In,Ga)Se2 (CIGS) films from In–Ga–Se precursors was characterized by scanning Auger electron spectroscopy (SAES), secondary ion mass spectroscopy (SIMS), x-ray diffraction, scanning electron microscopy, and transmission electron microscopy (TEM). In–Ga–Se precursor layers were deposited on Mo-coated soda-lime glass, and then the layers were exposed to Cu and Se fluxes to form CIGS films. The SIMS and SAES analyses showed a homogeneous distribution of Cu throughout the CIGS films during the deposition of Cu and Se. The phase changes observed in the CIGS films during the deposition of Cu and Se on the In–Ga–Se precursor films were as follows: (In,Ga)2Se3 →[Cu(In,Ga)5Se8] →Cu(In,Ga)3Se5 →Cu(In,Ga)Se2. The grain size increased from the submicron grains of the (In,Ga)2Se3 precursor film to several micrometers in the stoichiometric Cu(In,Ga)Se2 film. A growth model of CIGS crystals is introduced on the basis of the results of TEM observations. CIGS crystals are mainly grown under (In,Ga)-rich conditions in the preparation from In–Ga–Se precursor films.

APA, Harvard, Vancouver, ISO, and other styles

4

Keller, Debora, Stephan Buecheler, Patrick Reinhard, Fabian Pianezzi, Darius Pohl, Alexander Surrey, Bernd Rellinghaus, Rolf Erni, and Ayodhya N. Tiwari. "Local Band Gap Measurements by VEELS of Thin Film Solar Cells." Microscopy and Microanalysis 20, no. 4 (April 2, 2014): 1246–53. http://dx.doi.org/10.1017/s1431927614000543.

Full text

Abstract:

AbstractThis work presents a systematic study that evaluates the feasibility and reliability of local band gap measurements of Cu(In,Ga)Se2 thin films by valence electron energy-loss spectroscopy (VEELS). The compositional gradients across the Cu(In,Ga)Se2 layer cause variations in the band gap energy, which are experimentally determined using a monochromated scanning transmission electron microscope (STEM). The results reveal the expected band gap variation across the Cu(In,Ga)Se2 layer and therefore confirm the feasibility of local band gap measurements of Cu(In,Ga)Se2 by VEELS. The precision and accuracy of the results are discussed based on the analysis of individual error sources, which leads to the conclusion that the precision of our measurements is most limited by the acquisition reproducibility, if the signal-to-noise ratio of the spectrum is high enough. Furthermore, we simulate the impact of radiation losses on the measured band gap value and propose a thickness-dependent correction. In future work, localized band gap variations will be measured on a more localized length scale to investigate, e.g., the influence of chemical inhomogeneities and dopant accumulations at grain boundaries.

APA, Harvard, Vancouver, ISO, and other styles

5

Vidal Lorbada, Ricardo, Thomas Walter, David Fuertes Marrón, Dennis Muecke, Tetiana Lavrenko, Oliver Salomon, and Raymund Schaeffler. "Phototransistor Behavior in CIGS Solar Cells and the Effect of the Back Contact Barrier." Energies 13, no. 18 (September 11, 2020): 4753. http://dx.doi.org/10.3390/en13184753.

Full text

Abstract:

In this paper, the impact of the back contact barrier on the performance of Cu (In, Ga) Se2 solar cells is addressed. This effect is clearly visible at lower temperatures, but it also influences the fundamental parameters of a solar cell, such as open-circuit voltage, fill factor and the efficiency at normal operation conditions. A phototransistor model was proposed in previous works and could satisfactorily explain specific effects associated with the back contact barrier, such as the dependence of the saturated current in the forward bias on the illumination level. The effect of this contribution is also studied in this research in the context of metastable parameter drift, typical for Cu (In, Ga) Se2 thin-film solar cells, as a consequence of different bias or light soaking treatments under high-temperature conditions. The impact of the back contact barrier on Cu (In, Ga) Se2 thin-film solar cells is analyzed based on experimental measurements as well as numerical simulations with Technology Computer-Aided Design (TCAD). A barrier-lowering model for the molybdenum/Cu (In, Ga) Se2 Schottky interface was proposed to reach a better agreement between the simulations and the experimental results. Thus, in this work, the phototransistor behavior is discussed further in the context of metastabilities supported by numerical simulations.

APA, Harvard, Vancouver, ISO, and other styles

6

Hariskos, Dimitrios, Wolfram Hempel, Richard Menner, and Wolfram Witte. "Influence of Substrate Temperature during InxSy Sputtering on Cu(In,Ga)Se2/Buffer Interface Properties and Solar Cell Performance." Applied Sciences 10, no. 3 (February 5, 2020): 1052. http://dx.doi.org/10.3390/app10031052.

Full text

Abstract:

Indium sulfide (InxSy)—besides CdS and Zn(O,S)—is already used as a buffer layer in chalcopyrite-type thin-film solar cells and modules. We discuss the influence of the substrate temperature during very fast magnetron sputtering of InxSy buffer layers on the interface formation and the performance of Cu(In,Ga)Se2 solar cells. The substrate temperature was increased from room temperature up to 240 °C, and the highest power conversion efficiencies were obtained at a temperature plateau around 200 °C, with the best values around 15.3%. Industrially relevant in-line co-evaporated polycrystalline Cu(In,Ga)Se2 absorber layers were used, which yield solar cell efficiencies of up to 17.1% in combination with a solution-grown CdS buffer. The chemical composition of the InxSy buffer as well as of the Cu(In,Ga)Se2/InxSy interface was analyzed by time-of-flight secondary ion mass spectrometry. Changes from homogenous and stoichiometric In2S3 layers deposited at RT to inhomogenous and more sulfur-rich and indium-deficient compositions for higher temperatures were observed. This finding is accompanied with a pronounced copper depletion at the Cu(In,Ga)Se2 absorber surface, and a sodium accumulation in the InxSy buffer and at the absorber/buffer interface. These last two features seem to be the origin for achieving the highest conversion efficiencies at substrate temperatures around 200 °C.

APA, Harvard, Vancouver, ISO, and other styles

7

Zhang, Xianfeng, Masakazu Kobayashi, and Akira Yamada. "Comparison of Ag(In,Ga)Se2/Mo and Cu(In,Ga)Se2/Mo Interfaces in Solar Cells." ACS Applied Materials & Interfaces 9, no. 19 (May 5, 2017): 16215–20. http://dx.doi.org/10.1021/acsami.7b02548.

Full text

APA, Harvard, Vancouver, ISO, and other styles

8

Liu, Jiang, Daming Zhuang, Hexin Luan, Mingjie Cao, Min Xie, and Xiaolong Li. "Preparation of Cu(In,Ga)Se2 thin film by sputtering from Cu(In,Ga)Se2 quaternary target." Progress in Natural Science: Materials International 23, no. 2 (April 2013): 133–38. http://dx.doi.org/10.1016/j.pnsc.2013.02.006.

Full text

APA, Harvard, Vancouver, ISO, and other styles

9

Zhao, Yong Ping, Cong Chun Zhang, Gui Fu Ding, and Yong Liang Wang. "Research and Characterization of an Absorber Layer Material — Cu(In,Ga)Se₂ Sputtered on Polyimide Substrate in Material Engineering." Advanced Materials Research 583 (October 2012): 370–73. http://dx.doi.org/10.4028/www.scientific.net/amr.583.370.

Full text

Abstract:

Cu(In,Ga)Se2 is a very important type of absorber layer material for high efficiency solar cells in material engineering. Cu(In,Ga)Se2 thin films were prepared on polyimide (PI) substrates coated with Mo by RF magnetron sputtering in one-stage at temperature below 450 °C. Samples with high level crystallization were deposited on polyimide coated with Mo by optimizing process parameters. Lower electric resistivity, better quality of CIGS absorber layer was fabricated in lower temperature by sputtering.

APA, Harvard, Vancouver, ISO, and other styles

10

Simchi, Hamed, Brian E. McCandless, T. Meng, Jonathan H. Boyle, and William N. Shafarman. "MoO3 back contact for CuInSe2-based thin film solar cells." MRS Proceedings 1538 (2013): 173–78. http://dx.doi.org/10.1557/opl.2013.1018.

Full text

Abstract:

ABSTRACTMoO3 films with a high work function (5.5 eV), high transparency, and a wide bandgap (3.0 - 3.4 eV) are a potential candidate for the primary back contact of Cu(InGa)Se2 thin film solar cells. This may be advantageous to form ohmic contact in superstrate devices where the back contact will be deposited after the Cu(InGa)Se2 layer and MoSe2 layer doesn’t form during Cu(InGa)Se2 deposition. In addition, the MoO3 may be incorporated in a transparent back contact in tandem or bifacial cells. In this study, MoO3 films for use as a back contact for Cu(In,Ga)Se2 thin film solar cells were prepared by reactive rf sputtering with O2/(O2+Ar) = 35%. The effect of post processing on the structural properties of the deposited films were investigated using x-ray diffraction and scanning electron microscopy. Annealing resulted in crystallization of the films to the α-MoO3 phases at 400°C. Increasing the oxygen partial pressure had no significant effect on optical transmittance of the films, and bandgaps in the range of 2.6-2.9 eV and 3.1-3.4 eV were obtained for the as deposited and annealed films, respectively. Cu(In,Ga)Se2 thin film solar cells prepared using an as-deposited Mo-MoO3 back contact yielded an efficiency of >14% with VOC = 647 (mV), JSC = 28.4 (mA), and FF. = 78.1%. Cells with ITO-MoO3 back contact showed an efficiency of ∼12% with VOC = 642 (mV), JSC = 26.8 (mA), and FF. = 69.2%. The efficiency of cells with an annealed MoO3 back contact was limited to 4%, showing a blocking diode behavior in the forward bias J-V curve. This may be caused by the presence of a barrier between the valence bands of the Cu(In,Ga)Se2 and MoO3, due to the higher bandgap of the annealed MoO3 films. SEM cross section studies showed uniform coverage of the as-deposited MoO3 layer and formation of voids for the annealed MoO3 film. Structural orientation of the Cu(In,Ga)Se2 absorber layer was also altered by the MoO3 film and less-oriented films were observed for either cases.

APA, Harvard, Vancouver, ISO, and other styles

11

Chakrabarti, R., B. Maiti, S. Chaudhuri, and A. K. Pal. "Photoconductivity of Cu(In, Ga) Se2 films." Solar Energy Materials and Solar Cells 43, no. 3 (October 1996): 237–47. http://dx.doi.org/10.1016/0927-0248(95)00174-3.

Full text

APA, Harvard, Vancouver, ISO, and other styles

12

Rega, N., S. Siebentritt, J. Albert, S. Nishiwaki, A. Zajogin, M. Ch Lux-Steiner, R. Kniese, and M. J. Romero. "Excitonic luminescence of Cu(In,Ga)Se2." Thin Solid Films 480-481 (June 2005): 286–90. http://dx.doi.org/10.1016/j.tsf.2004.11.079.

Full text

APA, Harvard, Vancouver, ISO, and other styles

13

Wagner, Mt, I. Dirnstorfer, D. M. Hofmann, M. D. Lampert, F. Karg, and B. K. Meyer. "Characterization of CuIn(Ga)Se2 Thin Films." physica status solidi (a) 167, no. 1 (May 1998): 131–42. http://dx.doi.org/10.1002/(sici)1521-396x(199805)167:1<131::aid-pssa131>3.0.co;2-f.

Full text

APA, Harvard, Vancouver, ISO, and other styles

14

Wagner, Mt, D. M. Hofmann, I. Dirnstorfer, M. D. Lampert, F. Karg, and B. K. Meyer. "Characterization of CuIn(Ga)Se2 Thin Films." physica status solidi (a) 168, no. 1 (July 1998): 153–61. http://dx.doi.org/10.1002/(sici)1521-396x(199807)168:1<153::aid-pssa153>3.0.co;2-x.

Full text

APA, Harvard, Vancouver, ISO, and other styles

15

Dirnstorfer, I., Mt Wagner, D. M. Hofmann, M. D. Lampert, F. Karg, and B. K. Meyer. "Characterization of CuIn(Ga)Se2 Thin Films." physica status solidi (a) 168, no. 1 (July 1998): 163–75. http://dx.doi.org/10.1002/(sici)1521-396x(199807)168:1<163::aid-pssa163>3.0.co;2-t.

Full text

APA, Harvard, Vancouver, ISO, and other styles

16

Engelhardt, F., M. Schmidt, Th Meyer, O. Seifert, J. Parisi, and U. Rau. "Metastable electrical transport in Cu(In,Ga)Se2 thin films and ZnO/CdS/Cu(In,Ga)Se2 heterostructures." Physics Letters A 245, no. 5 (August 1998): 489–93. http://dx.doi.org/10.1016/s0375-9601(98)00401-0.

Full text

APA, Harvard, Vancouver, ISO, and other styles

17

Minemoto, Takashi, Yasuhiro Hashimoto, Takuya Satoh, Takayuki Negami, Hideyuki Takakura, and Yoshihiro Hamakawa. "Cu(In,Ga)Se2 solar cells with controlled conduction band offset of window/Cu(In,Ga)Se2 layers." Journal of Applied Physics 89, no. 12 (June 15, 2001): 8327–30. http://dx.doi.org/10.1063/1.1366655.

Full text

APA, Harvard, Vancouver, ISO, and other styles

18

Abou-Ras, Daniel, Raquel Caballero, Cornelia Streeck, Burkhard Beckhoff, Jung-Hwan In, and Sungho Jeong. "Comprehensive Comparison of Various Techniques for the Analysis of Elemental Distributions in Thin Films: Additional Techniques." Microscopy and Microanalysis 21, no. 6 (September 14, 2015): 1644–48. http://dx.doi.org/10.1017/s1431927615015093.

Full text

Abstract:

AbstractIn a recent publication by Abou-Ras et al., various techniques for the analysis of elemental distribution in thin films were compared, using the example of a 2-µm thick Cu(In,Ga)Se2 thin film applied as an absorber material in a solar cell. The authors of this work found that similar relative Ga distributions perpendicular to the substrate across the Cu(In,Ga)Se2 thin film were determined by 18 different techniques, applied on samples from the same identical deposition run. Their spatial and depth resolutions, their measuring speeds, their availabilities, as well as their detection limits were discussed. The present work adds two further techniques to this comparison: laser-induced breakdown spectroscopy and grazing-incidence X-ray fluorescence analysis.

APA, Harvard, Vancouver, ISO, and other styles

19

Liu Fang-Fang, Sun Yun, and He Qing. "Influences of Ga gradient distribution on Cu(In, Ga)Se2 film." Acta Physica Sinica 63, no. 4 (2014): 047201. http://dx.doi.org/10.7498/aps.63.047201.

Full text

APA, Harvard, Vancouver, ISO, and other styles

20

Haarstrich, J., H. Metzner, C. Ronning, A. Undisz, T. Rissom, C. A. Kaufmann, and H. W. Schock. "Luminescence properties of Ga-graded Cu(In,Ga)Se2 thin films." Thin Solid Films 520, no. 9 (February 2012): 3657–62. http://dx.doi.org/10.1016/j.tsf.2011.12.012.

Full text

APA, Harvard, Vancouver, ISO, and other styles

21

Klinkert, T., M. Jubault, F. Donsanti, D. Lincot, and J. F. Guillemoles. "Ga gradients in Cu(In,Ga)Se2: Formation, characterization, and consequences." Journal of Renewable and Sustainable Energy 6, no. 1 (January 2014): 011403. http://dx.doi.org/10.1063/1.4866255.

Full text

APA, Harvard, Vancouver, ISO, and other styles

22

Dittrich, Th, A. Gonzáles, T. Rada, T. Rissom, E. Zillner, S. Sadewasser, and M. Lux-Steiner. "Comparative study of Cu(In,Ga)Se2/CdS and Cu(In,Ga)Se2/In2S3 systems by surface photovoltage techniques." Thin Solid Films 535 (May 2013): 357–61. http://dx.doi.org/10.1016/j.tsf.2012.12.078.

Full text

APA, Harvard, Vancouver, ISO, and other styles

23

Dyk, E. E. van, C. Radue, and A. R. Gxasheka. "Characterization of Cu(In,Ga)Se2 photovoltaic modules." Thin Solid Films 515, no. 15 (May 2007): 6196–99. http://dx.doi.org/10.1016/j.tsf.2006.12.065.

Full text

APA, Harvard, Vancouver, ISO, and other styles

24

Harel, S., P. Jonnard, T. Lepetit, L. Arzel, and N. Barreau. "Impact of KF-post deposition treatment on Cu(In,Ga)Se2 surface and Cu(In,Ga)Se2/CdS interface sulfurization." Applied Surface Science 473 (April 2019): 1062–65. http://dx.doi.org/10.1016/j.apsusc.2018.12.062.

Full text

APA, Harvard, Vancouver, ISO, and other styles

25

Lin, Y. C., Z. Q. Lin, C. H. Shen, L. Q. Wang, C. T. Ha, and Chris Peng. "Cu(In,Ga)Se2 films prepared by sputtering with a chalcopyrite Cu(In,Ga)Se2 quaternary alloy and In targets." Journal of Materials Science: Materials in Electronics 23, no. 2 (June 10, 2011): 493–500. http://dx.doi.org/10.1007/s10854-011-0424-8.

Full text

APA, Harvard, Vancouver, ISO, and other styles

26

Rau, U., T. C. M. Müller, T. M. H. Tran, B. E. Pieters, and A. Gerber. "Electroluminescence of Cu(In,Ga)Se2 solar cells and modules." MRS Proceedings 1538 (2013): 133–44. http://dx.doi.org/10.1557/opl.2013.979.

Full text

Abstract:

ABSTRACTFundamental aspects of (electro-)luminescence of Cu(In,Ga)Se2 solar cells and modules are investigated by means of spectrally and spatially resolved measurements. The validity of the reciprocity relation between spectrally resolved electroluminescence emission and photovoltaic quantum efficiency is verified for the case of industrially produced ZnO/CdS/Cu(In,Ga)Se2 heterojunction solar cells. Further we find that photo- and electroluminescent emission in these devices obey a superposition principle only in a limited range of the applied electrical or illumination bias. This range depends on the light soaking history of the sample and extends up to an injected current density of approximately 15 mAcm-2 after 3 h of light soaking at a temperature of 400 K. In the state prior to light soaking this range is limited to 4 mAcm-2. At higher bias, a characteristic discrepancy between electroluminescence and electro-modulated photoluminescence appears. We attribute this anomaly to a potential barrier behavior close to the CdS/ Cu(In,Ga)Se2 interface. Metastable defect reactions induced by holes injected into the space charge region partly reduce this barrier. We further find that the luminescence efficiency is enhanced by a factor of 3 by light soaking at 400 K. Spatially resolved electroluminescence measurements conducted during application of voltage or current bias at ambient temperature in the dark are qualitatively compatible with the conclusions drawn from the spectrally resolved measurements.

APA, Harvard, Vancouver, ISO, and other styles

27

Edoff, Marika, Sebastian Schleussner, Erik Wallin, and Olle Lundberg. "Technological and economical aspects on the influence of reduced Cu(In,Ga)Se2 thickness and Ga grading for co-evaporated Cu(In,Ga)Se2 modules." Thin Solid Films 519, no. 21 (August 2011): 7530–33. http://dx.doi.org/10.1016/j.tsf.2011.01.369.

Full text

APA, Harvard, Vancouver, ISO, and other styles

28

Timmo, K., M. Kauk-Kuusik, M. Pilvet, M. Altosaar, M. Grossberg, M. Danilson, R. Kaupmees, V. Mikli, J. Raudoja, and T. Varema. "Cu(In,Ga)Se2 monograin powders with different Ga content for solar cells." Solar Energy 176 (December 2018): 648–55. http://dx.doi.org/10.1016/j.solener.2018.10.078.

Full text

APA, Harvard, Vancouver, ISO, and other styles

29

Minoura, Shota, Takuji Maekawa, Keita Kodera, Akihiro Nakane, Shigeru Niki, and Hiroyuki Fujiwara. "Optical constants of Cu(In, Ga)Se2 for arbitrary Cu and Ga compositions." Journal of Applied Physics 117, no. 19 (May 21, 2015): 195703. http://dx.doi.org/10.1063/1.4921300.

Full text

APA, Harvard, Vancouver, ISO, and other styles

30

Zhu, Xiaobo, Tzu-Huan Cheng, and Chee Wee Liu. "Ga content and thickness inhomogeneity effects on Cu(In, Ga)Se2 solar modules." Electronic Materials Letters 12, no. 4 (July 2016): 506–11. http://dx.doi.org/10.1007/s13391-016-4014-z.

Full text

APA, Harvard, Vancouver, ISO, and other styles

31

Li, Jian V., Lorelle M. Mansfield, Brian Egaas, and Kannan Ramanathan. "Electrical properties of CdS/Cu(In,Ga)Se2 interface." Japanese Journal of Applied Physics 57, no. 8 (June 27, 2018): 085701. http://dx.doi.org/10.7567/jjap.57.085701.

Full text

APA, Harvard, Vancouver, ISO, and other styles

32

Sakurai, Takeaki, Keiki Taguchi, Muhammad Monirul Islam, Shogo Ishizuka, Akimasa Yamada, Koji Matsubara, Shigeru Niki, and Katsuhiro Akimoto. "Time-Resolved Microphotoluminescence Study of Cu(In,Ga)Se2." Japanese Journal of Applied Physics 50, no. 5S2 (May 1, 2011): 05FC01. http://dx.doi.org/10.7567/jjap.50.05fc01.

Full text

APA, Harvard, Vancouver, ISO, and other styles

33

Rockett, A., D. Liao, J. T. Heath, J. D. Cohen, Y. M. Strzhemechny, L. J. Brillson, K. Ramanathan, and W. N. Shafarman. "Near-surface defect distributions in Cu(In,Ga)Se2." Thin Solid Films 431-432 (May 2003): 301–6. http://dx.doi.org/10.1016/s0040-6090(03)00148-2.

Full text

APA, Harvard, Vancouver, ISO, and other styles

34

Ott, Thomas, Thomas Walter, and Thomas Unold. "Phototransistor effects in Cu(In,Ga)Se2 solar cells." Thin Solid Films 535 (May 2013): 275–78. http://dx.doi.org/10.1016/j.tsf.2012.11.084.

Full text

APA, Harvard, Vancouver, ISO, and other styles

35

Schlenker, T., V. Laptev, H. W. Schock, and J. H. Werner. "Substrate influence on Cu(In,Ga)Se2 film texture." Thin Solid Films 480-481 (June 2005): 29–32. http://dx.doi.org/10.1016/j.tsf.2004.11.034.

Full text

APA, Harvard, Vancouver, ISO, and other styles

36

Powalla, Michael, Philip Jackson, Wolfram Witte, Dimitrios Hariskos, Stefan Paetel, Carsten Tschamber, and Wiltraud Wischmann. "High-efficiency Cu(In,Ga)Se2 cells and modules." Solar Energy Materials and Solar Cells 119 (December 2013): 51–58. http://dx.doi.org/10.1016/j.solmat.2013.05.002.

Full text

APA, Harvard, Vancouver, ISO, and other styles

37

West, Bradley M., Michael Stuckelberger, Barry Lai, Jörg Maser, and Mariana I. Bertoni. "Nanoscale Growth Kinetics of Cu(In,Ga)Se2 Absorbers." Journal of Physical Chemistry C 122, no. 40 (August 30, 2018): 22897–902. http://dx.doi.org/10.1021/acs.jpcc.8b05062.

Full text

APA, Harvard, Vancouver, ISO, and other styles

38

Sakurai, Takeaki, Keiki Taguchi, Muhammad Monirul Islam, Shogo Ishizuka, Akimasa Yamada, Koji Matsubara, Shigeru Niki, and Katsuhiro Akimoto. "Time-Resolved Microphotoluminescence Study of Cu(In,Ga)Se2." Japanese Journal of Applied Physics 50, no. 5 (May 20, 2011): 05FC01. http://dx.doi.org/10.1143/jjap.50.05fc01.

Full text

APA, Harvard, Vancouver, ISO, and other styles

39

Rud, V. Yu, Yu V. Rud, V. F. Gremenok, and V. B. Zalesski. "Cd-free Cu(In,Ga)Se2/In2S3thin-film heterostructures." physica status solidi (c) 6, no. 5 (May 2009): 1269–72. http://dx.doi.org/10.1002/pssc.200881173.

Full text

APA, Harvard, Vancouver, ISO, and other styles

40

Amara, A., A. Drici, and M. Guerioune. "Electrical characterisation of Cu(In, Ga)Se2 single crystals." physica status solidi (a) 195, no. 2 (January 2003): 405–11. http://dx.doi.org/10.1002/pssa.200305921.

Full text

APA, Harvard, Vancouver, ISO, and other styles

41

Schleussner, Sebastian Michael, Jonas Pettersson, Tobias Törndahl, and Marika Edoff. "Surface engineering in Cu(In,Ga)Se2 solar cells." Progress in Photovoltaics: Research and Applications 21, no. 4 (November 20, 2011): 561–68. http://dx.doi.org/10.1002/pip.1229.

Full text

APA, Harvard, Vancouver, ISO, and other styles

42

Bednar, N., N. Severino, and N. Adamovic. "Modelling of Cu(In,Ga)Se2 Solar Materials/Devices." Journal of Green Engineering 5, no. 4 (2016): 1–10. http://dx.doi.org/10.13052/jge1904-4720.5341.

Full text

APA, Harvard, Vancouver, ISO, and other styles

43

Mansfield, Lorelle M., Darius Kuciauskas, Patricia Dippo, Jian V. Li, Karen Bowers, Bobby To, Clay DeHart, and Kannan Ramanathan. "Optoelectronic Investigation of Sb-Doped Cu(In,Ga)Se2." IEEE Journal of Photovoltaics 5, no. 6 (November 2015): 1769–74. http://dx.doi.org/10.1109/jphotov.2015.2470082.

Full text

APA, Harvard, Vancouver, ISO, and other styles

44

Sakurai, T., N. Ishida, S. Ishizuka, M. M. Islam, A. Kasai, K. Matsubara, K. Sakurai, A. Yamada, K. Akimoto, and S. Niki. "Effects of annealing under various atmospheres on electrical properties of Cu(In,Ga)Se2 films and CdS/Cu(In,Ga)Se2 heterostructures." Thin Solid Films 516, no. 20 (August 2008): 7036–40. http://dx.doi.org/10.1016/j.tsf.2007.12.135.

Full text

APA, Harvard, Vancouver, ISO, and other styles

45

Lee, Dong-Won, Won-Ju Cho, Jun-Kwang Song, Oh-Yun Kwon, Won-Hee Lee, Chi-Hong Park, Kyung-Eun Park, Heesoo Lee, and Yong-Nam Kim. "Failure analysis of Cu(In,Ga)Se2 photovoltaic modules: degradation mechanism of Cu(In,Ga)Se2 solar cells under harsh environmental conditions." Progress in Photovoltaics: Research and Applications 23, no. 7 (April 25, 2014): 829–37. http://dx.doi.org/10.1002/pip.2497.

Full text

APA, Harvard, Vancouver, ISO, and other styles

46

Nishimura, Takahito, Hiroki Sugiura, Kazuyoshi Nakada, and Akira Yamada. "Characterization of Interface Between Accurately Controlled Cu-Deficient Layer and Cu(In,Ga)Se2 Absorber for Cu(In,Ga)Se2 Solar Cells." physica status solidi (RRL) - Rapid Research Letters 12, no. 8 (May 16, 2018): 1800129. http://dx.doi.org/10.1002/pssr.201800129.

Full text

APA, Harvard, Vancouver, ISO, and other styles

47

Urbaniak, A., and M. Igalson. "Relaxation of light induced metastabilities in Cu(In,Ga)Se2 with different Ga content." Thin Solid Films 517, no. 7 (February 2009): 2231–34. http://dx.doi.org/10.1016/j.tsf.2008.10.117.

Full text

APA, Harvard, Vancouver, ISO, and other styles

48

Han, Jun-feng, Cheng Liao, Tao Jiang, Hua-mu Xie, and Kui Zhao. "Investigation of Cu(In,Ga)Se2 polycrystalline growth: Ga diffusion and surface morphology evolution." Materials Research Bulletin 49 (January 2014): 187–92. http://dx.doi.org/10.1016/j.materresbull.2013.08.073.

Full text

APA, Harvard, Vancouver, ISO, and other styles

49

Teixeira, Jennifer P., Ricardo B. L. Vieira, Bruno P. Falcão, Marika Edoff, Pedro M. P. Salomé, and Joaquim P. Leitão. "Recombination Channels in Cu(In,Ga)Se2 Thin Films: Impact of the Ga-Profile." Journal of Physical Chemistry C 124, no. 23 (May 13, 2020): 12295–304. http://dx.doi.org/10.1021/acs.jpcc.0c02622.

Full text

APA, Harvard, Vancouver, ISO, and other styles

50

Hu, Zhaojing, Yunxiang Zhang, Shuping Lin, Shiqing Cheng, Zhichao He, Chaojie Wang, Zhiqiang Zhou, Fangfang Liu, Yun Sun, and Wei Liu. "Incorporation of Ag into Cu(In,Ga)Se2 films in low-temperature process." Chinese Optics Letters 19, no. 11 (2021): 114001. http://dx.doi.org/10.3788/col202119.114001.

Full text

APA, Harvard, Vancouver, ISO, and other styles

We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!