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Journal articles on the topic 'Fröhlich interaction'

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Published: 10 December 2022

Last updated: 28 January 2023

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1

Polland, H. J., W. W. Rühle, K. Ploog, and C. W. Tu. "Fröhlich interaction in two-dimensionalGaAs/AlxGa1−xAssystems." Physical Review B 36, no. 14 (November 15, 1987): 7722–25. http://dx.doi.org/10.1103/physrevb.36.7722.

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2

Abrashev, M. V., A. P. Litvinchuk, C. Thomsen, and V. N. Popov. "Fröhlich-interaction-induced multiphonon Raman scattering inSrCuO2sandSr0.5Ca0.5CuO2s." Physical Review B 55, no. 14 (April 1, 1997): R8638—R8641. http://dx.doi.org/10.1103/physrevb.55.r8638.

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3

Spagnolo, V., G. Ventruti, G. Scamarcio, M. Lugarà, and G. C. Righini. "Fröhlich electron-phonon interaction in CdSxSe1-xnanocrystals." Superlattices and Microstructures 18, no. 2 (September 1995): 113–20. http://dx.doi.org/10.1006/spmi.1995.1095.

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4

Huang, Kun, and Bangfen Zhu. "Dielectric continuum model and Fröhlich interaction in superlattices." Physical Review B 38, no. 18 (December 15, 1988): 13377–86. http://dx.doi.org/10.1103/physrevb.38.13377.

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5

Trallero-Giner, C., A. Cantarero, and M. Cardona. "One-phonon resonant Raman scattering: Fröhlich exciton-phonon interaction." Physical Review B 40, no. 6 (August 15, 1989): 4030–36. http://dx.doi.org/10.1103/physrevb.40.4030.

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6

BOGOLUBOV, N. N., and A. V. SOLDATOV. "UNIFORM UPPER BOUNDS IN THE FRÖHLICH POLARON THEORY." Modern Physics Letters B 07, no. 27 (November 20, 1993): 1773–79. http://dx.doi.org/10.1142/s0217984993001806.

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We present a very simple method to derive the upper bound of the ground-state energy for the Fröhlich polaron theory. The obtained bounds are proved to be uniform for all values of the interaction parameter.

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7

Kash, J. A., S. S. Jha, and J. C. Tsang. "Picosecond Raman studies of the Fröhlich interaction in semiconductor alloys." Physical Review Letters 58, no. 18 (May 4, 1987): 1869–72. http://dx.doi.org/10.1103/physrevlett.58.1869.

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8

Kainth, D. S., M. N. Khalid, and H. P. Hughes. "Direct verification of the q-dependence of the Fröhlich interaction." Solid State Communications 122, no. 7-8 (June 2002): 351–54. http://dx.doi.org/10.1016/s0038-1098(02)00175-8.

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9

Nash, K. J., and M. S. Skolnick. "Picosecond Raman studies of the Fröhlich interaction in semiconductor alloys." Physical Review Letters 60, no. 9 (February 29, 1988): 863. http://dx.doi.org/10.1103/physrevlett.60.863.

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10

Pokorný, J., and J. Fiala. "Heat bath coupling effects on interaction between Fröhlich vibration systems." Czechoslovak Journal of Physics 44, no. 1 (January 1994): 67–78. http://dx.doi.org/10.1007/bf01691751.

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11

Cros, A., A. Cantarero, and V. I. Belitsky. "Two-Phonon Magneto-Raman Scattering in Quantum Wells: Fröhlich Interaction." physica status solidi (b) 198, no. 2 (December 1, 1996): 653–64. http://dx.doi.org/10.1002/pssb.2221980211.

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12

Tkach, M. V., Ju O. Seti, and O. M. Voitsekhivska. "Renormalized spectrum of quasiparticle in limited number of states, strongly interacting with two-mode polarization phonons at T=0 K." Condensed Matter Physics 24, no. 1 (March 2021): 13705. http://dx.doi.org/10.5488/cmp.24.13705.

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Within unitary transformed Hamiltonian of Fröhlich type, using the Green's functions method, exact renormalized energy spectrum of quasiparticle strongly interacting with two-mode polarization phonons is obtained at T=0 K in a model of the system with limited number of its initial states. Exact analytical expressions for the average number of phonons in ground state and in all satellite states of the system are presented. Their dependences on a magnitude of interaction between quasiparticle and both phonon modes are analyzed.

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13

WEI, SHU YI, FANG ZHANG, WEI LI, ZU ZHAO, and WEN DENG HUANG. "ELECTRON–PHONON INTERACTION IN WURTZITE AlxGa1-xN TERNARY CRYSTAL." International Journal of Modern Physics B 21, no. 22 (September 10, 2007): 3841–50. http://dx.doi.org/10.1142/s0217979207037740.

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Optical vibrations of the lattice and the electron-optical-phonon interaction in wurtzite ternary nitride-based crystals was studied using the pseudo-unit-cell approach. The Fröhlich coupling constants, polaron energy shifts and the effective masses of the polaron in the system were investigated using the perturbation method. It was found that the LO and TO phonons in wurtzite Al x Ga 1-x N exhibit the one-mode behavior. The effects of the unit-cell volume varying with the composition x of ternary nitride-based crystals were also investigated.

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14

Betancourt-Riera, R., R. Riera, R. Rosas, and J. M. Nieto. "Electron Raman scattering in asymmetrical multiple quantum wells system: Fröhlich interaction." Physica E: Low-dimensional Systems and Nanostructures 40, no. 4 (February 2008): 785–94. http://dx.doi.org/10.1016/j.physe.2007.09.190.

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15

DALLACASA, V., M. PAIUSCO, and L. MANES. "SOLUTION OF THE COOPER-BCS EQUATIONS WITH AN ENERGY-DEPENDENT ELECTRON-BOSON INTERACTION." International Journal of Modern Physics B 07, no. 13 (June 15, 1993): 2529–38. http://dx.doi.org/10.1142/s0217979293002936.

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A numerical solution of the Cooper-BCS model is given, taking into account the energy dependence of the pair interaction U(ε) in the form suggested by Fröhlich. At energies corresponding to scales Δx≈100 A this model is found to predict a high Tc≈100 K, with absence of isotope effect, in the weak to moderate coupling limit, and to reduce to the usual BCS model with constant interaction at macroscopic scales.

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16

WEI, SHU YI, WEN DENG HUANG, CONG XIN XIA, and HUA RUI WU. "TRANSFER MATRIX METHOD FOR ELECTRON-PHONON INTERACTION IN MULTILAYER SPHERICAL HETEROSTRUCTURES." International Journal of Modern Physics B 19, no. 12 (May 10, 2005): 2061–71. http://dx.doi.org/10.1142/s0217979205029675.

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Within the framework of the dielectric-continuum model, the polarization eigenvector, the dispersion relations, and the electron-phonon interaction Fröhlich-like Hamiltonian of the interface optical (IO) phonons in multilayer spherical heterostructures are derived by using transfer-matrix method. The dispersion relations and electron-phonon coupling function strengths of the IO phonons are investigated for 5-layer CdS/HgS/CdS/HgS/H 2 O spherical heterostructures. We find that there are seven IO phonon branches in 5-layer CdS/HgS/CdS/HgS/H 2 O spherical heterostructures, but only one has a more important contribution to the coupling function [Formula: see text].

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17

Wang, X. F., and X. L. Lei. "A simple description of Fröhlich interaction in cylindrical GaAs/AlAs quantum wires." Solid State Communications 91, no. 7 (August 1994): 513–17. http://dx.doi.org/10.1016/0038-1098(94)90365-4.

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18

Cros, A., A. Cantarero, C. Trallero-Giner, and M. Cardona. "Raman scattering in quantum wells in a high magnetic field: Fröhlich interaction." Physical Review B 46, no. 19 (November 15, 1992): 12627–34. http://dx.doi.org/10.1103/physrevb.46.12627.

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19

Tan, Qing-Hai, Yu-Jia Sun, Xue-Lu Liu, Kai-Xuan Xu, Yuan-Fei Gao, Shu-Liang Ren, Ping-Heng Tan, and Jun Zhang. "Breakdown of Raman selection rules by Fröhlich interaction in few-layer WS2." Nano Research 14, no. 1 (September 30, 2020): 239–44. http://dx.doi.org/10.1007/s12274-020-3075-3.

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20

Bley, Gonzalo A. "Absence of binding in the Nelson and piezoelectric polaron models." Reviews in Mathematical Physics 31, no. 02 (February 27, 2019): 1950006. http://dx.doi.org/10.1142/s0129055x19500065.

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In the context of the massless Nelson model, we prove that two non-relativistic nucleons interacting with a massless meson field do not bind when a sufficiently strong Coulomb repulsion between the nucleons is added to the Hamiltonian. The result holds for both the renormalized and unrenormalized theories, and can also be applied to the so-called piezoelectric polaron model, which describes an electron interacting with the acoustical vibrational modes of a crystal through the piezoelectric interaction. The result can then be interpreted as well as a no-binding statement about piezoelectric bipolarons. The methods used allow also for a significant reduction of about 30% over previously known no-binding conditions for the optical bipolaron model of H. Fröhlich.

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21

Alexandrov, A. S. "Superlight High Tc Bipolarons in Cuprates." International Journal of Modern Physics B 17, no. 18n20 (August 10, 2003): 3315–18. http://dx.doi.org/10.1142/s0217979203020910.

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Most of the proposed models of high-temperature superconductivity (HTSC) are based on the short-range electron-electron correlations or/and on a short-range electron-phonon interaction. However, in the cuprates the screening is poor due to a low carrier density, layered crystal structure, and high ionicity of the lattice. We develop further the bipolaron model of HTSC, which explicitly takes into account the long-range origin of all interactions. The long-range electron-phonon (Fröhlich) interaction binds carriers into real space pairs (small bipolarons) with surprisingly low mass but sufficient binding energy, while the long-range Coulomb repulsion keeps them from forming larger clusters. The model has explained many key features of cuprates. It is shown here that real-space pairing takes place in many cuprates at variance with some (incorrect) criteria of the BCS-BEC crossover.

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22

Kandemir, B. S., and N. Gökçek. "Velocity renormalization in graphene: The role of trigonal warping and electron–phonon coupling effects." International Journal of Modern Physics B 31, no. 30 (December 4, 2017): 1750235. http://dx.doi.org/10.1142/s0217979217502356.

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We investigate the combined effects of trigonal warping and electron–phonon interactions on the renormalization of the Fermi velocity in graphene. We present an analytical solution to the associated Fröhlich Hamiltonian describing the interaction of doubly degenerate-optical phonon modes of graphene with electrons in the presence of trigonal warp within the framework of Lee–Low–Pines theory. On the basis of our model, it is analytically shown that in addition to its renormalization, Fermi velocity exhibits strong anisotropy due to the trigonal warping. It is also found that in the regime where the trigonal warp starts, distortion of energy bands emerges due to electron–phonon coupling, and the bands exhibit strong anisotropy.

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23

Маслов, А. Ю., and О. В. Прошина. "Электрон-фононное взаимодействие в квантовых ямах на основе одноосных материалов." Физика и техника полупроводников 53, no. 12 (2019): 1641. http://dx.doi.org/10.21883/ftp.2019.12.48618.9198.

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AbstractThe interaction of charged particles with interface optical phonons in quantum wells composed of uniaxially symmetric materials is studied theoretically. It is shown that the character of this interaction depends considerably on the degree of anisotropy of the phonon spectrum in the materials forming the quantum well and the barriers. In the case of strong anisotropy, the interaction turns out to be significantly weaker than it is in similar structures made of materials with cubic symmetry. In the case of weak phonon anisotropy, the interaction of charged particles with optical phonons can under certain conditions be described by a Fröhlich-type coupling constant, and both weak and strong electron–phonon interaction can take place in different structures. The results obtained extend the possibilities of the optical diagnostics of quantum nanostructures.

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24

Kauschke, W., A. K. Sood, M. Cardona, and K. Ploog. "Resonance Raman scattering in GaAs-AlxGa1−xAs superlattices: Impurity-induced Fröhlich-interaction scattering." Physical Review B 36, no. 3 (July 15, 1987): 1612–19. http://dx.doi.org/10.1103/physrevb.36.1612.

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25

Lin, Y., J. E. Eldridge, J. Sichelschmidt, S. W. Cheong, and T. Wahlbrink. "Fröhlich-interaction induced one-phonon Raman scattering in La2CuO4 using an infrared laser." Solid State Communications 112, no. 6 (October 1999): 315–18. http://dx.doi.org/10.1016/s0038-1098(99)00366-x.

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26

Betancourt-Riera, Ri, J. M. Nieto Jalil, Re Betancourt-Riera, and R. Riera. "Electron Raman scattering in semiconductor quantum wire in external magnetic field: Fröhlich interaction." Physica B: Condensed Matter 404, no. 16 (August 2009): 2468–73. http://dx.doi.org/10.1016/j.physb.2009.04.057.

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27

Belitsky, V. I., C. Trallero-Giner, and M. Cardona. "Magnetopolaron effect in one-phonon resonant Raman scattering from bulk semiconductors: Fröhlich interaction." Physical Review B 49, no. 16 (April 15, 1994): 11016–20. http://dx.doi.org/10.1103/physrevb.49.11016.

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28

PANDA, S., and B. K. PANDA. "SPIN-ORBIT ENHANCED POLARON IN A SINGLE QUANTUM WELL." Modern Physics Letters B 25, no. 32 (November 21, 2011): 2461–68. http://dx.doi.org/10.1142/s021798491102742x.

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The polaronic corrections to the electron energy and effective mass are calculated taking the Rashba spin-orbit coupling in the compositionally asymmetric single quantum well based on heterostructures of narrow gap semiconductors InGaAs and InAs . The electron interaction with the confined longitudinal optic phonon is considered in the Fröhlich form for calculating the polaron properties. In the weak coupling limit, the polaron properties are enhanced by the Rashba spin-orbit coupling in the asymmetric quantum well.

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29

Chang, Pengying, Xiaoyan Liu, Fei Liu, and Gang Du. "Remote Phonon Scattering in Two-Dimensional InSe FETs with High-κ Gate Stack." Micromachines 9, no. 12 (December 19, 2018): 674. http://dx.doi.org/10.3390/mi9120674.

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This work focuses on the effect of remote phonon arising from the substrate and high-κ gate dielectric on electron mobility in two-dimensional (2D) InSe field-effect transistors (FETs). The electrostatic characteristic under quantum confinement is derived by self-consistently solving the Poisson and Schrödinger equations using the effective mass approximation. Then mobility is calculated by the Kubo–Greenwood formula accounting for the remote phonon scattering (RPS) as well as the intrinsic phonon scatterings, including the acoustic phonon, homopolar phonon, optical phonon scatterings, and Fröhlich interaction. Using the above method, the mobility degradation due to remote phonon is comprehensively explored in single- and dual-gate InSe FETs utilizing SiO2, Al2O3, and HfO2 as gate dielectric respectively. We unveil the origin of temperature, inversion density, and thickness dependence of carrier mobility. Simulations indicate that remote phonon and Fröhlich interaction plays a comparatively major role in determining the electron transport in InSe. Mobility is more severely degraded by remote phonon of HfO2 dielectric than Al2O3 and SiO2 dielectric, which can be effectively insulated by introducing a SiO2 interfacial layer between the high-κ dielectric and InSe. Due to its smaller in-plane and quantization effective masses, mobility begins to increase at higher density as carriers become degenerate, and mobility degradation with a reduced layer number is much stronger in InSe compared with MoS2.

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30

DAT, NGUYEN NHU. "PHONON-LIMITED MOBILITY IN A FREE-STANDING POLAR SEMICONDUCTOR QUANTUM WIRE." Modern Physics Letters B 09, no. 26n27 (November 20, 1995): 1779–88. http://dx.doi.org/10.1142/s0217984995001807.

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A macroscopic continuum model is used to study the longitudinal optical phonons in a free-standing polar quantum wire with a rectangular cross section. The Fröhlich Hamiltonian describing the electron-phonon interaction is then obtained and used to calculate the electron mobility governed by confined LO phonons by means of the memory function approach, neglecting electron-electron interaction. Numerical calculations are given for a GaAs quantum wire, showing that the mobility is enhanced at least by one order of magnitude in comparison with the bulk-LO-phonon-limited one. It is shown that the contribution of intersubband scattering is important in wires of large width at high temperature.

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31

BRUNO-ALFONSO, ALEXYS, and GUO-QIANG HAI. "CALCULATION OF MAGNETODONOR STATES IN InP AND POLARON EFFECTS." International Journal of Modern Physics B 23, no. 12n13 (May 20, 2009): 3014–18. http://dx.doi.org/10.1142/s0217979209062736.

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Far-infrared transitions in polar semiconductors are known to be affected by the presence of shallow donor impurities, external magnetic fields and the electron-LO-phonon interaction. We calculate the magnetodonor states in indium phosphide by a diagonalization procedure, and introduce the electron-phonon interaction by the Fröhlich term. The main effects of this perturbation are calculated by a multi-level version of the Wigner-Brillouin theory. We determine the transition energies, from the ground state to excited states, and find good qualitative agreement with recently reported absorption-spectroscopy measurements in the 100-800 cm-1 range, with applied magnetic fields up to 30 T. Our calculations suggest that experimental peak splittings in the 400-450 cm-1 range are due to the electron-phonon interaction.

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32

MEBARKI, N., M. HARRAT, and M. BOUSSAHEL. "EXTENDED CHAMSEDDINE–FRÖHLICH APPROACH TO NONCOMMUTATIVE GEOMETRY AND THE TWO-DOUBLETS HIGGS MODEL." International Journal of Modern Physics A 22, no. 32 (December 30, 2007): 6279–305. http://dx.doi.org/10.1142/s0217751x07039274.

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The Chamseddine–Fröhlich approach to noncommutative geometry is extended by the introduction of the strong interaction sector in the mathematical formalism, and generalization of the Dirac operator and scalar product. This new approach is applied to the reformulation of the two-doublets Higgs model where the fuzzy mass, coupling and unitarity relations as well as mixing angles are derived. These tree level relations are no more preserved under the renormalization group flow in the context of the standard quantization method.

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33

Frommlet, Florian, Peter A. Markowich, and Christian Ringhofer. "A Wignerfunction Approach to Phonon Scattering." VLSI Design 9, no. 4 (January 1, 1999): 339–50. http://dx.doi.org/10.1155/1999/30381.

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We consider the motion of a single electron under phonon scattering caused by a crystal lattice. Starting from the Fröhlich Hamiltonian in the second quantization formalism we derive a kinetic transport model by using the Wigner transformation. Under the assumption of small electron-phonon interaction we derive asymptotically the operator representing electron-phonon scattering in the Wigner equation. We then consider some scaling limits and finally we give the connection of our result to the well known Barker-Ferry equation.

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34

Puttar, Devi, Vishal Verma, Vinayak Garg, and R. K. Moudgil. "Impact of electron-phonon interactions on Wigner crystallization in an electron quantum wire." IOP Conference Series: Materials Science and Engineering 1221, no. 1 (March 1, 2022): 012033. http://dx.doi.org/10.1088/1757-899x/1221/1/012033.

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Abstract In this paper, we explore the impact of electron-phonon (e-ph) coupling on the Wigner crystallization occurring due to strong electron-electron (e-e) interactions in a semiconductor-based electron quantum wire. The e-ph coupling is represented by the Fröhlich interaction potential and electron correlations are included within the dynamic version of self-consistent mean-field approximation of Hasegawa and Shimizu. Numerical results are reported for the static structure factor and pair-correlation function for fixed wire width and some selected values of electron number density parameter rs . A strong peak in the static structure factor and pronounced periodic oscillations in pair-correlation function indicate the formation of Wigner crystal in the quantum wire at a critical electron number density rs c . We find that the inclusion of e-ph interactions in addition to the usual e-e interactions significantly enhance rs c , at a fixed wire width.

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35

Yang, Jia-Yue, Guangzhao Qin, and Ming Hu. "Nontrivial contribution of Fröhlich electron-phonon interaction to lattice thermal conductivity of wurtzite GaN." Applied Physics Letters 109, no. 24 (December 12, 2016): 242103. http://dx.doi.org/10.1063/1.4971985.

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36

Kirschfeld, Kuno, and Thomas Kammer. "The Fröhlich effect: a consequence of the interaction of visual focal attention and metacontrast." Vision Research 39, no. 22 (November 1999): 3702–9. http://dx.doi.org/10.1016/s0042-6989(99)00089-9.

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37

Каширина, Н. И., and N. I. Kashirina. "Exponentially Correlated Gaussians for Simulating Of Localized and Autolocalized States in Polar Media." Mathematical Biology and Bioinformatics 12, no. 2 (August 24, 2017): 273–301. http://dx.doi.org/10.17537/2017.12.273.

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Localized and autolocalized states and their simplest two-electron complexes in polar media are considered in the continuum approximation. The electron-phonon interaction is taken into account in the Pekar-Fröhlich approximation. The exponentially correlated Gaussian basis is used for the calculation of the energy spectrum of two-electron systems in phonon field. Analytical expressions for effective functionals of paramagnetic centers and their simplest two-electron complexes are presented. Numerical examples are given for the calculations of the energy spectrum of localized and self-localized states in metal-ammonia solutions.

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38

Dat, Nguyen Nhu, and Le Thanh Hai. "Optical Phonon Modes and Electron-optical Phonon Interaction in Core-shell Semiconductor Quantum Wires." Communications in Physics 24, no. 4 (March 10, 2015): 333. http://dx.doi.org/10.15625/0868-3166/24/4/3268.

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Within the framework of the macroscopic dielectric continuum model the longitudinal optical (LO) phonon modes are derived for a cylindrical semiconductor quantum wire made of semiconductor 1 (well material) embedded in another finite semiconductor 2 (barrier material). The phonon states of modes are given by solving the generalized Born-Huang equation. It is shown that there may exist four types of longitudinal optical phonon modes according to the concrete materials forming the wire. The dispersion equations for phonon frequencies with wave-vector components parallel to the wire are obtained. After having quantized the phonon field we derive the Fröhlich Hamiltonian describing the electron--LO-phonon interaction. The influence of the thickness of the barrier layer as well as the thin metallic shell on the phonon frequencies and their interaction with electrons is studied.

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39

Chen, Zhesheng, Jelena Sjakste, Jingwei Dong, Amina Taleb-Ibrahimi, Jean-Pascal Rueff, Abhay Shukla, Jacques Peretti, Evangelos Papalazarou, Marino Marsi, and Luca Perfetti. "Ultrafast dynamics of hot carriers in a quasi–two-dimensional electron gas on InSe." Proceedings of the National Academy of Sciences 117, no. 36 (August 26, 2020): 21962–67. http://dx.doi.org/10.1073/pnas.2008282117.

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Two-dimensional electron gases (2DEGs) are at the base of current nanoelectronics because of their exceptional mobilities. Often the accumulation layer forms at polar interfaces with longitudinal optical (LO) modes. In most cases, the many-body screening of the quasi-2DEGs dramatically reduces the Fröhlich scattering strength. Despite the effectiveness of such a process, it has been recurrently proposed that a remote coupling with LO phonons persists even at high carrier concentration. We address this issue by perturbing electrons in an accumulation layer via an ultrafast laser pulse and monitoring their relaxation via time- and momentum-resolved spectroscopy. The cooling rate of excited carriers is monitored at doping level spanning from the semiconducting to the metallic limit. We observe that screening of LO phonons is not as efficient as it would be in a strictly 2D system. The large discrepancy is due to the remote coupling of confined states with the bulk. Our data indicate that the effect of such a remote coupling can be mimicked by a 3D Fröhlich interaction with Thomas–Fermi screening. These conclusions are very general and should apply to field effect transistors (FET) with high-κ dielectric gates, van der Waals heterostructures, and metallic interfaces between insulating oxides.

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40

ZHAO, XIANG-FU, and CUI-HONG LIU. "ONE-PHONON-ASSISTED ELECTRON RESONANT RAMAN SCATTERING IN FREE-STANDING QUANTUM WIRES." International Journal of Modern Physics B 21, no. 17 (July 10, 2007): 2989–3000. http://dx.doi.org/10.1142/s0217979207037466.

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The scattering intensity (SI) for an electron resonant Raman scattering (ERRS) process in a free-standing semiconductor quantum wire of cylindrical geometry associated with bulk longitudinal optical (LO) phonon modes or the surface optical (SO) phonon modes is calculated for T=0 K . The Fröhlich interaction is considered to illustrate the theory for a GaAs system. Electron states are confined within a free-standing quantum wire (FSW). Single parabolic conduction and valence bands are assumed. The selection rules are studied. Numerical results and a discussion are also presented for various radii of the cylindrical quantum wires.

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41

Zhang, Li, and Jun-jie Shi. "Polar interface optical phonon modes and Fröhlich electron–phonon interaction Hamiltonians in wurtzite quantum well wires." Semiconductor Science and Technology 20, no. 6 (April 27, 2005): 592–600. http://dx.doi.org/10.1088/0268-1242/20/6/019.

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42

Betancourt-Riera, Ri, Re Betancourt-Riera, R. Rosas, and R. Riera. "Electron Raman Scattering in Asymmetrical Multiple Quantum Wells System with an External Electric Field: Fröhlich Interaction." Journal of Computational and Theoretical Nanoscience 9, no. 12 (December 1, 2012): 2093–100. http://dx.doi.org/10.1166/jctn.2012.2621.

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43

López-Richard, V., G. E. Marques, C. Trallero-Giner, and J. Drake. "Resonant Raman scattering in a magnetic field assisted by Fröhlich interaction in zinc-blende-type semiconductors." Physical Review B 58, no. 24 (December 15, 1998): 16136–43. http://dx.doi.org/10.1103/physrevb.58.16136.

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44

Li, Zhang, Xie Hong-Jing, and Chen Chuan-Yu. "Interface Optical Phonon Modes and Fröhlich Electron-Phonon Interaction Hamiltonian in a Multi-shell Spherical Nanoheterosystem." Communications in Theoretical Physics 39, no. 2 (February 15, 2003): 238–44. http://dx.doi.org/10.1088/0253-6102/39/2/238.

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45

Zhang, L. "Polar optical phonon states and Fröhlich electron–phonon interaction Hamiltonians in a wurtzite nitride quantum dot." Physics Letters A 373, no. 23-24 (May 2009): 2087–90. http://dx.doi.org/10.1016/j.physleta.2009.04.017.

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ZHANG, L., and HONG-JING XIE. "DISPERSIONS AND FRÖHLICH ELECTRON–PHONON INTERACTION HAMILTONIAN OF PROPAGATING OPTICAL PHONON MODES IN QUASI-ONE-DIMENSIONAL WURTZITEGaN-BASED QUANTUM WELL WIRES." Surface Review and Letters 14, no. 05 (October 2007): 903–10. http://dx.doi.org/10.1142/s0218625x07010421.

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Abstract:

Based on the dielectric continuum model and Loudon's uniaxial crystal model, the propagating (PR) optical phonon modes and the Fröhlich-like electron–PR phonon interaction Hamiltonian in a quasi-one-dimensional (Q1D) wurtzite quantum well wire (QWW) structure are deduced and analyzed. Numerical calculations on AlGaN / GaN / AlGaN wurtzite QWW are performed. Results reveal that the dispersive frequencies of PR modes are the continuous functions of free wavenumber kzin z-direction and discrete functions of azimuthal quantum number m. The reduced behavior of the PR modes in wurtzite quantum systems is obviously observed. From the discussion of the electron–PR phonon coupling functions, it is found that the low-order PR modes in the case of small kzand m play a more important role in the electron–PR phonon interactions. Moreover, a detailed comparison of the PR modes in Q1D QWW structures with those in quasi-two-dimensional quantum wells are also carried out. The physical reasons resulting in the relationship and distinction in the two types of systems are also analyzed deeply.

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Zhong, Qing-Hu, Yu Wu, Yun-Chang Xiao, Liang-Bin Hu, and Rui-Qiang Wang. "The influence of size effect on interface phonons in core-shell quantum dot: a resonant Raman study." Modern Physics Letters B 28, no. 21 (August 20, 2014): 1450172. http://dx.doi.org/10.1142/s0217984914501723.

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Abstract:

In this paper, the interface phonons in a core-shell quantum dot are theoretically studied by a resonant Raman scattering (RRS) process. Fröhlich electron–phonon interaction is considered in the framework of the dielectric continuum approach. The Raman peaks are found to be sensitive to the size of strongly confined shell. The shift of the Raman resonant peaks is a consequence of the change of observed dispersion of the phonon frequency. The Raman intensity changes in the system with shell thickness, originating from the competition between the spacial distribution of electron wave function and the number of phonons joining in the RRS process. The analysis of the Raman spectra gives a physical explanation to the size-selective nature of the Raman process and some experimental results.

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La Rocca, G. C., T. Ruf, and M. Cardona. "Inter-Landau-level scattering in the valence band of zinc-blende semiconductors induced by the Fröhlich interaction." Physical Review B 41, no. 18 (June 15, 1990): 12672–79. http://dx.doi.org/10.1103/physrevb.41.12672.

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Reedyk, M., C. Thomsen, M. Cardona, J. S. Xue, and J. E. Greedan. "Observation of the effects of phonon dispersion on the Fröhlich-interaction-induced second-order Raman scattering inPb2Sr2PrCu3O8." Physical Review B 50, no. 18 (November 1, 1994): 13762–67. http://dx.doi.org/10.1103/physrevb.50.13762.

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Yu, Wenlei, Meijie Han, Kai Jiang, Zhihua Duan, Yawei Li, Zhigao Hu, and Junhao Chu. "Enhanced Fröhlich interaction of semiconductor cuprous oxide films determined by temperature-dependent Raman scattering and spectral transmittance." Journal of Raman Spectroscopy 44, no. 1 (July 16, 2012): 142–46. http://dx.doi.org/10.1002/jrs.4145.

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