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Journal articles on the topic 'Fluorine diffusion'

Author: Grafiati

Published: 4 June 2021

Last updated: 20 February 2023

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1

Tian, Kun Viviana, Gregory A. Chass, and Devis Di Tommaso. "Simulations reveal the role of composition into the atomic-level flexibility of bioactive glass cements." Physical Chemistry Chemical Physics 18, no. 2 (2016): 837–45. http://dx.doi.org/10.1039/c5cp05650k.

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2

Baheiraei, Nafiseh, and Mahmoud Azami. "Investigation of Fluorine Incorporation within Gelatin/Calcium Phosphate Nanocomposite Scaffold Prepared through a Diffusion Method." Advanced Composites Letters 22, no. 5 (September 2013): 096369351302200. http://dx.doi.org/10.1177/096369351302200503.

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In this study diffusional method was used to prepare a biomimetic calcium phosphate/gelatin nanocomposite as a scaffold for bone and tooth tissue engineering. Incorporation of fluorine into mineral phase of the scaffold was also investigated. Addition of fluoride to the synthesis process caused formation of fluoroapatite and calcium fluoride along with hydroxyapatite within gelatin while in the sample lacking fluorine atoms, hydroxyapatite and octacalcium phosphate were detected. With addition of fluorine within the structure of precipitated minerals, morphology of minerals was dramatically changed from oriented rod-like minerals with rectangular cross section toward spherical particles consisting of smaller crystals with uneven surface scattered over the gelatinous bulk material.

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3

Wang, Heng, Zongzheng Cao, Yuying Zhu, Menghan Liao, Genda Gu, Qi-Kun Xue, and Ding Zhang. "Tuning superconductivity of Bi₂Sr₂CaCu₂O_8+x by fluoride ion intercalation with LaF₃ gate dielectric." Journal of Applied Physics 132, no. 21 (December 7, 2022): 214301. http://dx.doi.org/10.1063/5.0121822.

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We demonstrate fluorine intercalation into Bi2Sr2CaCu2O8+x (BSCCO) flakes, as thick as 100 nm, by back-gating a single crystalline LaF3 substrate. Element-sensitive analysis not only confirms the presence of fluorine in BSCCO after gating but also reveals lateral diffusion of fluorine in BSCCO. Transport measurements further demonstrate the hole-doping effect of fluoride ions in BSCCO through effective modulation of the superconducting transitions. Our work introduces a distinct type of ions (F−) that can be intercalated into materials via solid state back-gating. It broadens the toolbox of ion back-gating and is useful for addressing exotic phenomena in the heavily hole doped regime.

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4

Virdi, S., A. C. T. Schettini, and R. França. "Fluoride varnishes: In vitro assessment of fluorine diffusion on enamel." Dental Materials 32 (2016): e75. http://dx.doi.org/10.1016/j.dental.2016.08.157.

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5

Shapiro, M. J., Tetsuo Matsuda, Son V. Nguyen, C. Parks, and C. Dziobkowski. "Fluorine Diffusion from Fluorosilicate Glass." Journal of The Electrochemical Society 143, no. 7 (July 1, 1996): L156—L158. http://dx.doi.org/10.1149/1.1836960.

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6

Hermann, Wilhelm, Angelika Raith, and Hans Rau. "Diffusion of Fluorine in Silica." Berichte der Bunsengesellschaft für physikalische Chemie 91, no. 1 (January 1987): 56–58. http://dx.doi.org/10.1002/bbpc.19870910112.

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7

Ko, Sen-Hou, Robert H. Doremus, X. S. Guo, and William Landford. "Refractive index gradient in the surface of a zirconium fluoride glass by exchange with chlorine." Journal of Materials Research 5, no. 1 (January 1990): 202–5. http://dx.doi.org/10.1557/jmr.1990.0202.

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The refractive index of the surface of a zirconium fluoride glass was increased by exchanging fluorine in the glass with gaseous chlorine. The chlorine profile in the glass surface, as measured by Rutherford backscattering, was that expected for diffusion. The refractive index change was measured with ellipsometry, and compared to models of the concentration profile of chlorine.

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8

Chen, Siyan, Zhengqing Zhou, Yong Ma, Li Zhang, Tianyi Wang, Shihao Wang, and Yinghua Zhang. "Study on Hazardous Areas of Hydrogen Fluoride Diffusion Based on CFD Simulation." Processes 9, no. 9 (August 30, 2021): 1545. http://dx.doi.org/10.3390/pr9091545.

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Hydrogen fluoride (HF) is a typical dangerous gas in the fluorine chemical industry. Its leakage is one of the most common types of accidents in this industry, and it poses a serious threat to personnel safety and health, environmental sanitation, and social stability. In this paper, the process and consequences of an HF leakage accident in a fluorine chemical plant were simulated by using computational fluid dynamics (CFD) simulation software, and hazardous areas (lethal area, severe injury area, light injury area, and maximum allowable concentration area) of HF diffusion were determined according to the HF concentration corresponding to the degree of personal injury. Moreover, the effects of wind speed and height on hazardous areas were analyzed. The research results of this paper provide model support for similar enterprises to predict the consequences of harmful gas leakage accidents, and give suggestions on emergency evacuation and rescue work, which have practical application significance.

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9

Noda, Taiji. "Fluorine-enhanced boron diffusion induced by fluorine postimplantation in silicon." Journal of Applied Physics 96, no. 7 (October 2004): 3721–26. http://dx.doi.org/10.1063/1.1784618.

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10

Balcone-Boissard, Hélène, Don R. Baker, Benoit Villemant, Jean Cauzid, Georges Boudon, and E. Deloule. "Br diffusion in phonolitic melts: Comparison with fluorine and chlorine diffusion." American Mineralogist 105, no. 11 (November 1, 2020): 1639–46. http://dx.doi.org/10.2138/am-2020-7372.

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Abstract Bromine diffusion was measured in two natural phonolitic melts: (1) a K2O-rich (~10 wt%) one synthesized from the white pumice phase of the 79 AD eruption of Vesuvius (Italy), and (2) a Na2O-rich (~10 wt%) one corresponding to the most differentiated melt of the 12 000 BC eruption of the Laacher See (Germany). Experiments were performed at 0.5 and 1.0 GPa, 1250 to 1450 °C, at anhydrous and hydrous (2.65 ± 0.35 wt% of dissolved water) conditions. Experiments conducted with the diffusion-couple technique in the piston cylinder were performed with only bromine diffusing and with the simultaneous diffusion of a halogen mixture (F, Cl, Br) to evaluate the interactions between the halogens during diffusion. The diffusion profiles of Br were measured by X-ray fluorescence using synchrotron radiation microprobe (SYXRF), ID18F, at the European Synchrotron Radiation Facility (ESRF, France). Bromine diffusion displays Arrhenian behavior under anhydrous conditions that is similar when it diffuses alone and when it diffuses with F and Cl. The Br diffusion coefficients range between 2 × 10–12 m2/s at 1250 °C and 1.5 × 10–11 m2/s at 1450 °C for the Na-rich melt and between 3 × 10–12 m2/s at 1250 °C and 2.5 × 10–11 m2/s at 1450 °C for the K-rich melt, at 1.0 GPa. Although Br mobility is independent of F and Cl in anhydrous phonolitic melts, its behavior may be dependent on the dominant alkali in the melt, as previously observed for Cl, but not F. For hydrous experiments, although the data are scattered, the Br diffusivity increases slightly with water and the Na/K ratio seems to influence Br diffusivity. Similarly to noble gases, halogen diffusivity at a given temperature in the phonolitic melts appears related to the ionic porosity of the silicate structure. Compared to basaltic melt, Br diffusivities are approximately one order of magnitude lower in the Na-phonolite melt, because of the difference of the pre-exponential factor. Br mobility appears to be decoupled from melt viscosity, considering the results here.

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11

Feisel, Yves, Jonathan M. Castro, and Donald B. Dingwell. "Diffusion of F and Cl in dry rhyodacitic melt." American Mineralogist 104, no. 11 (November 1, 2019): 1689–99. http://dx.doi.org/10.2138/am-2019-7095.

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Abstract Chemical diffusion of F and Cl has been experimentally determined in a rhyodacitic melt obtained from remelting a sample of Hekla pumice (Iceland). Diffusion couple experiments were conducted in a vertical tube furnace over a temperature range of 750–950 °C and in air for durations of 1 to 35 days. Concentration profiles of F and Cl were obtained for the quenched samples using an electron microprobe. Fluorine and chlorine exhibit Arrhenian behavior over the range of temperature investigated here. The pre-exponential factors of F and Cl are D0(F) = 4.3 × 10−4 and D0(Cl) = 1.6 × 10−5 m2/s. Fluorine diffusion coefficients vary in the order of 1 × 10−15 to 1 × 10−13 m2/s, whereas Cl diffusivity is up to two orders of magnitude slower. The activation energies for F and Cl diffusivities are equal within error at 223 ± 31 and 229 ± 52 kJ/mol, respectively. The difference in diffusivity between F and Cl is particularly pronounced in the melt of our study, compared to results obtained for other magmatic melt compositions. This means that the potential for diffusive fractionation exists and may occur especially under conditions of magma ascent and bubble growth, as this would favor partitioning of the relatively fast-diffusing halogens into growing bubbles, due to H2O exsolution. A dependence of diffusivity on atomic radius observed here is enhanced over that observed in more basic, less viscous melts, indicating that diffusive fractionation is more likely to be pronounced in more silicic, more viscous systems. A proper parameterization and modeling of diffusive fractionation of halogens in actively degassing volcanic systems thus holds the potential of serving as a tool for quantifying the processes responsible for volcanic unrest.

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12

Jeng, S. ‐P, T. ‐P Ma, R. Canteri, M. Anderle, and G. W. Rubloff. "Anomalous diffusion of fluorine in silicon." Applied Physics Letters 61, no. 11 (September 14, 1992): 1310–12. http://dx.doi.org/10.1063/1.107575.

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13

Kottler, C., M. Döbeli, U. Krähenbühl, and M. Nussbaumer. "Exposure age dating by fluorine diffusion." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 188, no. 1-4 (April 2002): 61–66. http://dx.doi.org/10.1016/s0168-583x(01)01010-2.

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14

Impellizzeri, G., S. Boninelli, F. Priolo, E. Napolitani, C. Spinella, A. Chroneos, and H. Bracht. "Fluorine effect on As diffusion in Ge." Journal of Applied Physics 109, no. 11 (June 2011): 113527. http://dx.doi.org/10.1063/1.3592962.

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15

Guzmán-Arellano, R. M., A. D. Hernández-Nieves, C. A. Balseiro, and Gonzalo Usaj. "Diffusion of fluorine adatoms on doped graphene." Applied Physics Letters 105, no. 12 (September 22, 2014): 121606. http://dx.doi.org/10.1063/1.4896511.

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16

Kirchhof, J., S. Unger, K. F. Klein, and B. Knappe. "Diffusion behaviour of fluorine in silica glass." Journal of Non-Crystalline Solids 181, no. 3 (February 1995): 266–73. http://dx.doi.org/10.1016/s0022-3093(94)00525-7.

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17

Vuorimäki, Antti H. "Fluorine spin diffusion and relaxation in CF3COOAg." Chemical Physics Letters 202, no. 3-4 (January 1993): 253–59. http://dx.doi.org/10.1016/0009-2614(93)85275-s.

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18

Böhm, Anna, and Burkhard C. Schmidt. "Fluorine and chlorine diffusion in phonolitic melt." Chemical Geology 346 (May 2013): 162–71. http://dx.doi.org/10.1016/j.chemgeo.2012.09.005.

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19

Jacques, J. M., L. S. Robertson, K. S. Jones, M. E. Law, Mike Rendon, and Joe Bennett. "Fluorine-enhanced boron diffusion in amorphous silicon." Applied Physics Letters 82, no. 20 (May 19, 2003): 3469–71. http://dx.doi.org/10.1063/1.1576508.

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20

Brault, P. "Fluorine diffusion in silicon under plasma treatment." Journal of Physics: Condensed Matter 3, no. 36 (September 9, 1991): 7073–78. http://dx.doi.org/10.1088/0953-8984/3/36/014.

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21

Markovich, Sergey I., Anna V. Popova, and Sergey A. Kuznetsov. "Electrochemistry of Neodymium in an Equimolar NaCl-KCl Melt without and with Addition of Fluoride Ions." ECS Transactions 109, no. 14 (September 30, 2022): 29–40. http://dx.doi.org/10.1149/10914.0029ecst.

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The paper presents results of neodymium electrochemical behavior in chloride and chloride-fluoride melts. It was shown that the process of neodymium electroreduction in the NaCl-KCl-NdCl3 melt proceeds in two stages. It was established by diagnostic criteria of voltammetry that the discharge process of Nd(III) to Nd(II) at a sweep rate in the range of 0.6 ≤ n ≤ 1.0 V s-1 is not complicated by reaction disproportionation. In this study diffusion coefficients, activation energy of diffusion for Nd(III) complexes and standard rate constants of charge transfer for the Nd(III)/Nd(II) redox couple in the NaCl-KCl melt were determined. It was shown that the addition of fluorine anions into the NaCl-KCl-NdCl3 melt leads to stabilization of the higher oxidation state of neodymium in chloride-fluoride melts and neodymium in the intermediate oxidation state +2 in these melts does not exist.

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22

Chai, Su-Young, and Sung-Hoon Choa. "Reduction of Fluorine Diffusion and Improvement of Dark Current Using Carbon Implantation in CMOS Image Sensor." Crystals 11, no. 9 (September 11, 2021): 1106. http://dx.doi.org/10.3390/cryst11091106.

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Recently, the demand of a high resolution complementary metal-oxide semiconductor (CMOS) image sensor is dramatically increasing. As the pixel size reduces to submicron, however, the quality of the sensor image decreases. In particular, the dark current can act as a large noise source resulting in reduction of the quality of the sensor image. Fluorine ion implantation was commonly used to improve the dark current by reducing the trap state density. However, the implanted fluorine diffused to the outside of the silicon surface and disappeared after annealing process. In this paper, we analyzed the effects of carbon implantation on the fluorine diffusion and the dark current characteristics of the CMOS image sensor. As the carbon was implanted with dose of 5.0 × 1014 and 1 × 1015 ions/cm2 in N+ area of FD region, the retained dose of fluorine was improved by more than 131% and 242%, respectively than no carbon implantation indicating that the higher concentration of the carbon implantation, the higher the retained dose of fluorine after annealing. As the retained fluorine concentration increased, the minority carriers of electrons or holes decreased by more Si-F bond formation, resulting in increasing the sheet resistance. When carbon was implanted with 1.0 × 1015 ions/cm2, the defective pixel, dark current, transient noise, and flicker were much improved by 25%, 9.4%, 1%, and 28%, respectively compared to no carbon implantation. Therefore, the diffusion of fluorine after annealing could be improved by the carbon implantation leading to improvement of the dark current characteristics.

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23

Kaushik, Vidya S., Robert L. Hance, Hsing-H. Tseng, and Philip J. Tobin. "A SIMS-TEM study of fluorine implants and anneals into silicon and polysilicon." Proceedings, annual meeting, Electron Microscopy Society of America 49 (August 1991): 808–9. http://dx.doi.org/10.1017/s042482010008835x.

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The behavior of fluorine in silicon is important for VLSI applications. The presence of fluorine can lead to improved gate oxide interface reliability and to enhanced boron diffusion in BF2 implanted devices. We have therefore studied the diffusion behavior of fluorine in silicon and polysilicon using coupled SIMS and TEM investigations on samples implanted with fluorine alone.Fluorine was implanted into a) (100) silicon and b) polysilicon layers to a dose of 1 x 1016/cm2 at 60 keV at room temperature. The polysilicon layers were grown by LPCVD at 635°C, resulting in small grained columnar polysilicon. The polysilicon layers had a 50 nm grown oxide layer between the polysilicon layer and the (100) silicon substrate. After the fluorine implants, the wafers were subjected to annealing at 750-950°C for 30 minutes. All the wafers were capped with a 13 nm silicon dioxide layer at the wafer surface prior to the ion implantation. SIMS analysis was performed on a Cameca IMS-3F spectrometer with 10 keV O2+ ions. XTEM images were obtained on a JEOL 2000 FXII operated at 200 keV with the electron beam parallel to the <110> silicon zone axis.

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24

Yang, Liang, Chaoyang Li, Caifang Cao, Xiang Xue, Dandan Gong, and Linsheng Wan. "Kinetics of Low-Grade Scheelite Leaching with a Mixture of Sodium Phosphate and Sodium Fluoride." Metals 12, no. 10 (October 19, 2022): 1759. http://dx.doi.org/10.3390/met12101759.

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The current technology of leaching low-grade scheelite with sodium hydroxide or sodium carbonate has the disadvantages of large leaching reagent dosage and low leaching efficiency of tungsten. In order to extract scheelite efficiently, the kinetics of low-grade scheelite leaching with a mixture of sodium phosphate and sodium fluoride was investigated. In this study, the effects of temperature, phosphate concentration, and fluoride ion concentration on the leaching rate of tungsten were investigated. Our results showed that the leaching rate of tungsten was greatly influenced by the temperature and less affected by the concentration of phosphate and fluorine ions. The leaching process was controlled by a chemical reaction with an apparent activation energy value of 51 ± 0.2 kJ/mol. The apparent reaction orders with respect to phosphate and fluorine ions were 0.49 and 0.11, respectively. The reaction product calcium fluorophosphate was a loose, rod-like crystal, which would not tightly wrap on the surface of scheelite to prevent the diffusion process. The leaching kinetics of low-grade scheelite was in accordance with the shrinking core model, and the corresponding kinetic equation was also established.

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25

Jacques, J. M., K. S. Jones, L. S. Robertson, A. Li-Fatou, C. M. Hazelton, E. Napolitani, and L. M. Rubin. "Fluorine-enhanced boron diffusion in germanium-preamorphized silicon." Journal of Applied Physics 98, no. 7 (October 2005): 073521. http://dx.doi.org/10.1063/1.2084336.

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26

Kim, Min Su, and Jeong Woo Lee. "Effect of seasoning-layer stress on fluorine diffusion." AIP Advances 10, no. 8 (August 1, 2020): 085103. http://dx.doi.org/10.1063/5.0015318.

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27

Greer, Frank, D. Fraser, J. W. Coburn, and David B. Graves. "Fluorine atom subsurface diffusion and reaction in photoresist." Journal of Applied Physics 94, no. 12 (2003): 7453. http://dx.doi.org/10.1063/1.1625782.

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28

Park, Yong-Jik, and Jong-Jean Kim. "Fluorine implantation effect on boron diffusion in Si." Journal of Applied Physics 85, no. 2 (January 15, 1999): 803–6. http://dx.doi.org/10.1063/1.369163.

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29

Zschau, Hans Eberhard, and Michael Schütze. "Oxidation Protection of Titanium Aluminides and Ni-Base Superalloys at High Temperatures by the Halogen Effect – Principles and Applications." Materials Science Forum 696 (September 2011): 366–71. http://dx.doi.org/10.4028/www.scientific.net/msf.696.366.

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The oxidation protection of TiAl-alloys at temperatures above 750°C can be improved by the fluorine effect. The results of thermodynamical calculations predict a corridor for a positive fluorine effect. Ion implantation of F was performed because of giving the best results. After a high F-loss during heating a thin protective alumina scale acts as a diffusion barrier. The F-depth profiles show a distinct maximum at the metal/oxide interface. The diffusion coefficient of F in TiAl for 900°C was determined. The stability of the F-effect after long oxidation time at 900°C and 1000°C can be explained by the existence of a constant F-amount at the metal/oxide interface ensuring a slow growth of the alumina scale. The fluorine effect was also applied to Ni-base superalloys to improve their high temperature oxidation resistance by forming a dense continuous protective alumina scale.

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30

Qi, Yueming, Pei Zhou, Junping Wang, Yipeng Ma, Jiaxing Wu, and Chengzhi Su. "Groundwater Pollution Model and Diffusion Law in Ordovician Limestone Aquifer Owe to Abandoned Red Mud Tailing Pit." Water 14, no. 9 (May 4, 2022): 1472. http://dx.doi.org/10.3390/w14091472.

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Red mud is a strong alkaline solid waste pollutant produced in the process of aluminum smelting, which causes great pollution to the regional groundwater environment due to its high content of fluorine and aluminum and high concentration of strong alkali. In this study, fluoride ion was selected as the model contaminant, and a numerical model of the groundwater flow field and solute transport was developed using GMS software to simulate and analyze the migration patterns of fluoride contaminants caused by the red mud pit for the fractured karst geohydrological conditions. The results demonstrated that the groundwater model and flow pattern were mainly controlled by atmospheric precipitation recharge, given flow boundary conditions and leakage of rivers and drains. When the concentration of fluorine pollutants in the red mud yard was 60.0 mg/L, the maximum migration distance of F− in the groundwater of the ordovician limestone aquifer was 473, 1160, 1595 and 1750 m after 1, 5, 10 and 15 years of bottom leakage, and the additional transport distances were 687, 435 and 155 m every 5 years, respectively. The range of F− pollution plume was 0.37 km2, 1.15 km2, 1.95 km2 and 2.14 km2, respectively and the range of newly added pollution plume was 0.78 km2, 0.80 km2 and 0.19 km2, respectively, every five years. Both indicated that with the extension of time, the migration and diffusion rate of pollutants slow down, and the diffusion volume increased first and then decreased. The F− pollution plume spread from the red mud pit to the northeast, which was consistent with the flow of groundwater. The high-concentration pollution plume was mainly distributed in the Ordovician limestone fractured aquifer in the northeast. This study revealed the migration law of red mud pollutants, and provided a scientific decision-making basis for the prevention and control of red mud groundwater pollution in the future.

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31

Sofronov, Vladimir, Zakhar Ivanov, Yuriy Makaseyev, and Tamara Kostareva. "Research of Dysprosium, Terbium and Neodymium Oxides Fluoration." Key Engineering Materials 683 (February 2016): 345–52. http://dx.doi.org/10.4028/www.scientific.net/kem.683.345.

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Production of high energy permanent magnets (HEPM) on the basis of rare-earth metals is one of leading knowledge intensive branches of world industry. Raw materials for production of magnets are magnetic alloys. In order to increase magnetic features scientists implement the additives of certain metals and their compounds, such as dysprosium and terbium additives in substantial amounts – up to 7-8 %.Within the framework of a ladle fluoride technology of HEPM manufacturing on the basis of a system Nd-Fe-B, developed by authors, scientists implement the additives of dysprosium and terbium fluoride, by virtue where of there was conducted a research on fluoration kinetics of corresponding oxides by elemental fluorine. The present article quotes results of such research and defines main kinetic parameters of examined processes – diffusion coefficient, kinetic constant and activation energy. Aiming to cost reduction of fluoride manufacture ammonium fluoride was used as a fluorinating agent by the example of fluoration of neodymium oxide.

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32

Fujikawa, Y., S. Kuwano, K. S. Nakayama, T. Nagao, J. T. Sadowski, R. Z. Bahktizin, T. Sakurai, Y. Asari, J. Nara, and T. Ohno. "Fluorine diffusion assisted by diffusing silicon on the Si(111)-(7×7) surface." Journal of Chemical Physics 129, no. 23 (December 21, 2008): 234710. http://dx.doi.org/10.1063/1.3039873.

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33

El Mubarek, H. A. W. "Reduction of phosphorus diffusion in germanium by fluorine implantation." Journal of Applied Physics 114, no. 22 (December 14, 2013): 223512. http://dx.doi.org/10.1063/1.4847555.

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34

Kajihara, Koichi, Taisuke Miura, Hayato Kamioka, Masahiro Hirano, Linards Skuja, and Hideo Hosono. "Diffusion of oxygen molecules in fluorine-doped amorphous SiO2." Materials Science and Engineering: B 173, no. 1-3 (October 2010): 158–61. http://dx.doi.org/10.1016/j.mseb.2010.01.002.

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35

Mystkowska, Joanna, Grażyna Marczuk-Kolada, Katarzyna Leszczyńska, Jan Ryszard Dąbrowski, and Joanna Karaś. "Fluoride Release and Antibacterial Activity of Self-Made Composite Materials for Dental Fillings." Solid State Phenomena 147-149 (January 2009): 801–6. http://dx.doi.org/10.4028/www.scientific.net/ssp.147-149.801.

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In the paper own prepared materials with addition fluorine sources were evaluated. The aim of the study was to assess the quality and quantity of fluoride source on fluoride ions release from composite materials. Antibacterial activity of analyzed materials in relation to four bacteria was investigated. Fluoride ions release was measured by direct potentiometry method with fluoride ion selective electrode. The measurements were carried out after 1, 4, 7, 14, 30, 60 days of storage in buffer at pH 6.8. The antibacterial activity of the materials was evaluated against standard bacterial strains using the agar diffusion test. Tests show that the highest level of fluoride ions emission was observed for composite with fluoridated glass (material A) on the seventh day of the study. Similar fluoride ions amount was released from material consisted of fluoridated glass and ytterbium fluoride (material C), but not until on the thirtieth day of the study. After 24 hours of composite bonding there was inhibition of bacterial growth by composite C, whereas composite A did not show similar activity. On the eighth day after polymerization, both materials were significantly more active towards two bacteria.

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36

Jacob, K. T., and S. Srikanth. "Use of metastable equilibria for determination of Gibbs energy of solids." Journal of Materials Research 3, no. 4 (August 1988): 687–93. http://dx.doi.org/10.1557/jmr.1988.0687.

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Attempts are made to measure activities of both components of a binary alloy (A–B) at 650 K using a solid-state galvanic cell incorporating a new composite solid electrolyte. Since the ionic conductivity of the composite solid electrolyte is three orders of magnitude higher than that of pure CaF2, the cell can be operated at lower temperatures. The alloy phase is equilibrated in separate experiments with flourides of each component and fluorine potential is measured. The mixture of the alloy (A–B) and the fluoride of the more reactive component (BF2) is stable, while (A–B) + AF2 mixture is metastable, Factors governing the possible use of metastable equilibria have been elucidated in this study. In the Co–Ni system, where the difference in Gibbs energies of formation of the fluorides is 21.4 kJ/mol, emf of the cell with metastable phases at the electrode is constant for periods ranging from 90 to 160 ks depending on alloy composition. Subsequently, the emf decreases because of the onset of the displacement reaction. In the Ni–Mn system, measurement of the activity of Ni using metastable equilibria is not fully successful at 650 K because of the large driving force for the displacement reaction (208.8 kJ/mol). Critical factors in the application of metastable equilibria are the driving force for displacement reaction and diffusion coefficients in both the alloy and fluoride solid solution.

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37

Nagoya, Akihiro, Ritsuko Yaokawa, and Nobuko Ohba. "Mechanism of monolayer to bilayer silicene transformation in CaSi2 due to fluorine diffusion." Physical Chemistry Chemical Physics 23, no. 15 (2021): 9315–24. http://dx.doi.org/10.1039/d0cp06644c.

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The mechanism by which fluorine (F) diffusion into CaSi₂ leads to a phase transformation from monolayers of silicene (MLSi) to bilayer silicene (BLSi) was revealed using HAADF–STEM observations and DFT calculations.

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38

McNesby, K. L., R. G. Daniel, J. M. Widder, and A. W. Miziolek. "Spectroscopic Investigation of Atmospheric-Pressure Counterflow Diffusion Flames Inhibited by Halons." Applied Spectroscopy 50, no. 1 (January 1996): 126–30. http://dx.doi.org/10.1366/0003702963906762.

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Infrared spectra of atmospheric-pressure counterflow diffusion flames inhibited by halons (a contraction of halogenated hydrocarbons) and a few of their potential replacements are measured with the use of Fourier transform spectroscopy. Results are compared to spectra of similar flame systems examined at low pressure. It is shown that, for atmospheric-pressure counterflow diffusion methane/air flames inhibited by CF3Br, CF2H2, and CF4, the two major fluorine-containing combustion products are HF and CF2O. A correlation is shown between flame inhibition efficiency and CF2O formation for atmospheric-pressure counterflow diffusion flames inhibited by these halons. For low-pressure premixed flames inhibited by CF3Br, HF appears to be the only fluorine-containing combustion product, even at relative dopant levels 15 times higher than those capable of extinguishing atmospheric-pressure counterflow diffusion flames. The results of these experiments illustrate the need for flame inhibitant testing over a wide spectrum of flame conditions, while providing further evidence that, for atmospheric-pressure inhibition of real fires by halons, CF2O may be a good indicator of inhibitor efficiency when that inhibition is at least partly accomplished by chemical scavenging of reactive combustion intermediates.

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39

Lam, Amy C. "Defect distribution of through-Oxide boron-Implanted silicon with and without fluorine incorporation." Proceedings, annual meeting, Electron Microscopy Society of America 50, no. 2 (August 1992): 1394–95. http://dx.doi.org/10.1017/s0424820100131607.

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Material defects generated during device processing can affect the performance of VLSI/ULSI devices. Ion implantation is the most common method of doping in the semiconductor industry. Implantation is usually performed with the wafers oriented 7° off the incident beam direction and through oxide to minimize the channeling effect. In order to obtain shallow p/n junctions for metal-oxide-semiconductor (MOS) devices, implantation of BF2+ molecular ions into silicon has been reported to have advantages over only B+ implantation. With the incorporation of fluorine, suppression of boron diffusion will be achieved by the emission of vacancies. However, BF2+ are heavy ions and can create considerable residual damage. Instead of BF2+ implantation, boron and fluorine implantations are done separately in our studies. As an alternative to fluorine implantation through oxide, fluorine could be introduced during thermal oxidation of silicon. Boron implantation of 3×l015/cm2 dose follows oxidation. The dosages for separate boron and fluorine implants are l×l015/cm2 and 2×l015/cm2 respectively, to attain the same elemental ratio as for BF2+ implantation.

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40

Pashchina, A. S. "Demixing in the plasma created in capillary discharges with polymeric wall." Journal of Physics: Conference Series 2100, no. 1 (November 1, 2021): 012002. http://dx.doi.org/10.1088/1742-6596/2100/1/012002.

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Abstract The results of spectral diagnostics of erosion plasma obtained in a pulsed discharge in a capillary with an evaporating wall made of hydrogen-carbon and fluorine-carbon polymers - polymethylmethacrylate and polytetrafluoroethylene - are presented. It was found that in both cases the distribution of chemical elements along the discharge radius is highly inhomogeneous, and their concentration ratio differs significantly from that in the capillary wall. The mass of particles is a common sign characterizing the demixing degree of chemical elements and direction of diffusion flows in fluorine-carbon and hydrogen-carbon plasmas. In both cases, lightweight particles are concentrated in the central high-temperature region, while heavy ones run away onto the low-temperature peripheral region of the discharge. Estimates show that the thermal diffusion mechanism is quite capable for providing the observed demixing degree of chemical elements. Favorable conditions for thermal diffusion processes are formed in the layer adjacent to the capillary wall, where the intense dissociation of radicals occurs, and the temperature gradient reaches up to ΔT∼10 eV/mm.

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41

Wakejima, A., K. Onda, A. Fujihara, E. Mizuki, and M. Kanamori. "Fluorine diffusion and accumulation in Si step-doped InAlAs layers." Applied Physics Letters 73, no. 17 (October 26, 1998): 2459–61. http://dx.doi.org/10.1063/1.122481.

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42

Chroneos, A., R. W. Grimes, and H. Bracht. "Fluorine codoping in germanium to suppress donor diffusion and deactivation." Journal of Applied Physics 106, no. 6 (September 15, 2009): 063707. http://dx.doi.org/10.1063/1.3224900.

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43

Tosoni, Sergio, Oriol Lamiel-Garcia, Daniel Fernandez Hevia, and Francesc Illas. "Theoretical Study of Atomic Fluorine Diffusion through Bulk TiO2 Polymorphs." Journal of Physical Chemistry C 117, no. 11 (March 13, 2013): 5855–60. http://dx.doi.org/10.1021/jp400474y.

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44

Kham, M. N., I. Matko, B. Chenevier, and P. Ashburn. "Reduced boron diffusion under interstitial injection in fluorine implanted silicon." Journal of Applied Physics 102, no. 11 (December 2007): 113718. http://dx.doi.org/10.1063/1.2822465.

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45

Duffy, R., V. C. Venezia, A. Heringa, B. J. Pawlak, M. J. P. Hopstaken, G. C. J. Maas, Y. Tamminga, T. Dao, F. Roozeboom, and L. Pelaz. "Boron diffusion in amorphous silicon and the role of fluorine." Applied Physics Letters 84, no. 21 (May 24, 2004): 4283–85. http://dx.doi.org/10.1063/1.1751225.

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46

ElMubarek, H. A. W., and P. Ashburn. "Reduction of Boron Diffusion in Silicon–Germanium by Fluorine Implantation." IEEE Electron Device Letters 25, no. 8 (August 2004): 535–37. http://dx.doi.org/10.1109/led.2004.832530.

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47

Iino, A., K. Matsubara, M. Ogai, Y. Horiuchi, and Y. Namihira. "Diffusion of hydrogen molecules in fluorine-doped single-mode fibres." Electronics Letters 25, no. 1 (January 5, 1989): 78–79. http://dx.doi.org/10.1049/el:19890056.

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48

Korobtsev, V. P., E. P. Marinenko, S. V. Matyukha, V. B. Sokolov, and B. B. Chaivanov. "Synthesis of xenon difluoride by xenon diffusion combustion in fluorine." Journal of Fluorine Chemistry 54, no. 1-3 (September 1991): 14. http://dx.doi.org/10.1016/s0022-1139(00)83524-1.

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49

Dingwell, Donald B., and Christopher M. Scarfe. "Chemical diffusion of fluorine in melts in the system Na2OAl2O3SiO2." Earth and Planetary Science Letters 73, no. 2-4 (May 1985): 377–84. http://dx.doi.org/10.1016/0012-821x(85)90085-8.

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50

Li, Liang, Yin Chen, and Shanjun Li. "Water Diffusion Behavior in Epoxy Resins with Various Fluorine Contents." Applied Spectroscopy 60, no. 4 (April 2006): 392–97. http://dx.doi.org/10.1366/000370206776593717.

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