Journal articles: 'Film deposited on substrate'

1

Panitchakan, H., and Pichet Limsuwan. "The Properties of Al₂O₃ Films Deposited onto Al₂O₃-TiC and Si Substrates by RF Diode Sputtering." Applied Mechanics and Materials 313-314 (March 2013): 126–30. http://dx.doi.org/10.4028/www.scientific.net/amm.313-314.126.

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The Al2O3 films were deposited onto Al2O3-TiC and Si (100) substrates by RF sputtering technique by varying powers sputter target, substrate bias voltages and fixed process pressure 25 mTorr which aim to achieve high deposition rate and investigated film properties onto different types. Result showed significant power sputter target to deposition rate both substrates and film properties depend on type of substrate. The power sputter target at 8kW and substrate bias voltage at -150 V is optimum deposition condition to provide deposition rate is 53.97nm/min for Al2O3-TiC substrate and 51.50nm/min for Si substrate. The Al2O3 film deposited onto Al2O3-TiC substrate surface morphology displayed rather roughness than Al2O3 film deposited onto Si substrate which verified from SEM and AFM as 0.99 nm (Ra) versus 0.46 nm (Ra). The film stress, hardness, reduces modulus and breakdown voltage (BDV) of Al2O3 film deposited were higher than Al2O3 film deposited on Al2O3-TiC substrates which were correspond to surface morphology.

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Hwang, Cheol Seong, Mark D. Vaudin, and Gregory T. Stauf. "Influence of substrate annealing on the epitaxial growth of BaTiO3 thin films by metal-organic chemical vapor deposition." Journal of Materials Research 12, no. 6 (June 1997): 1625–33. http://dx.doi.org/10.1557/jmr.1997.0222.

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BaTiO3 thin films were deposited by metal-organic chemical vapor deposition at 840 °C on two differently treated (100) MgO single crystal substrates. One MgO substrate was only mechanically polished and the other substrate was polished and then annealed at 1100 °C for 4 h in oxygen. Observation by transmission electron microscopy showed that the BaTiO3 thin film deposited on the unannealed substrate was fine-grained and that the whole film was epitaxial (100) in nature. In contrast, the film deposited on the annealed substrate consisted of large, (100)-oriented, epitaxial grains within which were distributed (110)-oriented grains with random in-plane orientations. These differences in BaTiO3 films deposited on differently treated substrates are discussed with reference to the surface structure of the MgO substrate and nucleation kinetics of BaTiO3 thin films on MgO.

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Prasad, Beesabathina D., L. Salamanca-Riba, S. N. Mao, X. X. Xi, T. Venkatesan, and X. D. Wu. "Effect of substrate materials on laser deposited Nd1.85Ce0.15CuO4−y films." Journal of Materials Research 9, no. 6 (June 1994): 1376–83. http://dx.doi.org/10.1557/jmr.1994.1376.

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The growth morphology and interface structure of Nd1.85Ce0.15CuO4−y (NCCO) films grown by pulsed laser deposition on two different types of substrates, “perovskite” LaAlO3 (LAO) and SrTiO3 (STO) and “fluorite” Y2O3-stabilized ZrO2 (YSZ), were studied using cross-sectional electron microscopy. Structurally, the NCCO films are different when grown on the two types of substrates in three aspects: (i) epitaxy, (ii) substrate-film intermixing, and (iii) substrate-film interface roughness. In general, films deposited on “fluorite” substrates showed better superconducting properties than the films grown on “perovskite” substrates, especially for thinner films. Lattice mismatch considerations are not sufficient to explain the observed differences since films grown on the YSZ substrate showed sharp substrate-film interface in spite of their large lattice misfit. The atomic arrangements at the interface were analyzed in terms of electrostatic energy (charge balance) and matching of the oxygen sublattices in order to account for the experimental results.

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Xu, Zhihua, and Zhengtao Chen. "The Effect of Titanium Oxide Substrate on the Film Morphology and Photoluminescence Properties of Organometal Halide Perovskites." MRS Proceedings 1771 (2015): 181–85. http://dx.doi.org/10.1557/opl.2015.608.

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ABSTRACTWe have investigated the film morphology and photoluminescence properties of spin-coated CH3NH3PbI3-xClx films on mesoporous and compact TiO2 substrates. We observe that the perovskite film deposited on the mesoporous substrate composed of 20 nm TiO2 nanopaticles exhibits relatively uniform grain size, while the films deposited on the compact TiO2 substrate and the mesoporous substrate with large TiO2 nanoparticles (200 nm) show highly heterogeneous film morphology. The heterogeneity of film morphology has significant effect on the photoluminescence spectra and lifetime of the perovskite films. The result of time-resolved confocal microscopy unveils the relation between film structure and photoluminescence properties.

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Xu, Fang Chao, and Kazuhiro Kusukawa. "Adhesion Strength of BNT Films Hydrothermally Deposited on Titanium Substrates." Advanced Materials Research 123-125 (August 2010): 399–402. http://dx.doi.org/10.4028/www.scientific.net/amr.123-125.399.

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Lead-free piezoelectric (Bi1/2Na1/2)TiO3 (BNT) films were deposited on 1 mm thick pure titanium(Ti) substrates by a hydrothermal method. Tensile tests were performed to quantitatively assess the adhesion strength between BNT films and Ti substrates. Ti substrates were pretreated by chemical polish and mechanical polish respectively prior to BNT film deposition. In the tensile test, the behavior of BNT film exfoliation was investigated by the replica method. The critical Ti substrate strain inducing BNT film exfoliation was determined by the aid of finite element analysis (FEM). In this study, the results revealed that BNT film exfoliations were caused by the strain of Ti substrate, and the mechanical polish pretreatment improved the adhesion of BNT film to Ti substrate.

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Sacken, U. von, and D. E. Brodie. "Structure of vacuum-deposited Zn3P2 films." Canadian Journal of Physics 64, no. 10 (October 1, 1986): 1369–73. http://dx.doi.org/10.1139/p86-243.

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The structure of polycrystalline Zn3P2 films has been studied for 1- to 2-μm-thick vacuum-deposited films on glass substrates. Transmission electron microscopy and X-ray diffraction techniques have been used to obtain a detailed, quantitative analysis of the film structure. The initial growth consists of small (≤ 10 nm), randomly oriented grains. As the film thickness increases, the growth of crystallites with the {220} planes oriented approximately parallel to the substrate is favoured, and a columnar structure develops along with a highly preferred orientation. This structure has been observed directly by transmission electron microscopy of thin cross sections of the films. The size of the grains at the free surface increases with the film thickness, reaching approximately 200–300 nm when the film is 1 μm thick. The effects of substrate temperature and low-energy (0.5–2 keV) electron bombardment of the film during growth have also been studied. Neither substrate temperature nor electron bombardment appear to have a major effect on the film structure. The primary effect of electron bombardment appears to be the creation of preferred nucleation sites on the substrate.

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7

Hasan, M. K., M. N. A. Shafi, M. N. A. Siddiquy, M. A. Rahim, and M. J. Islam. "Electrical, Magnetic and Morphological Properties of E-Beam Evaporated Ni Thin Films." Journal of Scientific Research 8, no. 1 (January 1, 2016): 21–28. http://dx.doi.org/10.3329/jsr.v8i1.24492.

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Nickel (Ni) thin films in the thickness range 50?80 nm have been prepared by electron beam evaporation method at a base pressure of 4x10-5 mbar on silicon and glass substrates. Some samples have been annealed at 573 K for 1.5 h in open air. The resistivity of Ni films on silicon substrate is higher than the resistivity of Ni films on glass substrate. The TCR of Ni films is found to be positive which indicates that the Ni samples are metallic in nature. Coercivity of Ni films increases with increasing film thickness. The coercivity of 80 nm as-deposited Ni film on glass substrate is found to be ~ 9 Oe. The rms value of the surface roughness of 150 nm as-deposited Ni film on glass substrate is ~12 nm and it becomes ~ 7 nm after annealing. On the other hand, the coercivity of 90 nm and 160 nm as-deposited Ni films on silicon substrate are 50 Oe and 85 Oe, respectively. The rms value of surface roughness of 120 nm as-deposited Ni film on Si substrate is ~ 16 nm. It becomes ~ 3 nm after annealing.

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8

Yu, J., and S. Matsumoto. "Growth of cubic boron nitride films on tungsten carbide substrates by direct current jet plasma chemical vapor deposition." Journal of Materials Research 19, no. 5 (May 2004): 1408–12. http://dx.doi.org/10.1557/jmr.2004.0188.

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Cubic boron nitride (cBN) film was deposited on Co-containing WC substrates by dc jet plasma chemical vapor deposition from an Ar–N2–BF3–H2 gas system. The formation of cobalt nitrides was observed at interface, and the hindrance of Co on cBN growth was demonstrated. Growth temperature and etching treatment of the substrate before deposition influenced the cBN growth greatly. At 1050 °C, cBN films were obtained on etched substrates but not on unetched substrates. At 1090 °C, cBN films were not obtained even on etched substrates. At 960 °C, cBN films deposited even on unetched substrate but the films always peeled off after exposing to air. The film quality of cBN deposited at 960 °C is better than that deposited at 1050 °C.

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9

Sawa, Sayuki, and Shinzo Yoshikado. "Evaluation of Planar-Type Thin Film ZnO Varistors Fabricated Using Pulsed Laser Ablation." Key Engineering Materials 320 (September 2006): 109–12. http://dx.doi.org/10.4028/www.scientific.net/kem.320.109.

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Planar-type thin film Bi-Mn-Co-doped ZnO varistors were fabricated on a silica glass substrate or a sintered alumina substrate using a visible light (532 nm) pulsed laser ablation method. The deposited thin films were annealed at 800°C or 900°C in air. For the thin films deposited on alumina substrates and then annealed, the contents of Bi and Mn decreased compared with those of the as-deposited films. Voltage-current (V-I) characteristics of the thin-film varistor fabricated on the alumina substrates and annealed showed nonlinearity. The nonlinearity index α was approximately 10 for the thin film deposited on the alumina substrate and annealed at 800°C in air using a target of ZnO doped with 2.5 mol% Bi2O3, 0.5 mol% MnO2 and 0.2 mol% Co3O4. Moreover, the current density of 20 A/cm3 was relatively high for safety use.

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10

Wang, Xin Chang, Bin Shen, and Fang Hong Sun. "Deposition and Characterization of Boron-Doped HFCVD Diamond Films on Ti, SiC, Si and Ta Substrates." Applied Mechanics and Materials 217-219 (November 2012): 1062–67. http://dx.doi.org/10.4028/www.scientific.net/amm.217-219.1062.

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In the present investigation, titanium (Ti), silicon carbide (SiC), silicon (Si) and tantalum (Ta) samples with the same geometry are selected as substrates to deposite HFCVD boron-doped diamond films with the same deposition parameters, using trimethyl borate as the dopant. FESEM, EDS, Raman spectroscopy and Rockwell hardness tester are used to characterize as-deposited boron-doped diamond (BDD) films. The FESEM micrographs exhibit that the film deposited on Si substrate presents the best uniformity and that on Ti substrate has smallest grain size and film thickness, with titanium element detected in the EDS spectra. Moreover, it’s speculated by indentation test that the adhesive strength between the BDD films and different substrates can be order as SiC>Ta>Ti for the different thermal expansion coefficient gaps between the substrate and diamond, and the hardness of the BDD coated samples measured using Rockwell hardness tester can also be order as SiC>Ta>Ti due to the different hardness of substrate materials. Finally, similar and representative characterization for BDD films is obtained from the Raman spectra for all the BDD films on different substrates.

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11

Kishi, Yoichi, Noriaki Ikenaga, Noriyuki Sakudo, and Zenjiro Yajima. "Low Temperature Crystallization of Sputter-Deposited TiNi Films." Advances in Science and Technology 78 (September 2012): 81–86. http://dx.doi.org/10.4028/www.scientific.net/ast.78.81.

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We have found that deposited film can be crystallized without the post-annealing treatment but with the simultaneous ion-irradiation during sputter-deposition at very low substrate temperature. The present paper reviews the low temperature crystallized TiNi films deposited by the above technique. An RF magnetron sputtering apparatus equipped with separate confocal sources as well as with a heating and ion-irradiating system for substrates was used to make the films crystalline. Without using the ion-irradiating system, the films deposited on ambient-temperature substrate have been amorphous. However, crystallized film is deposited even at 353 K of substrate temperature with using the system. Appropriate ion-irradiation is considered to be help to crystallize the film at low substrate temperature. Broad and doublet X-ray diffraction profile of the film, which was diffracted from B19’ and/or R phase, was recorded between 42 degree to 45 degree in 2 theta. The crystallized film deposited on a polyimide sheet was cut into the shape of a double-beam cantilever and the ends of the two beams were connected to an electrical power supply. The cantilever shows a repeatable two-way motion by electrical cycle of 0.1 Hz at room temperature.

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12

NAWAZ. RIZWAN, M., M. A. KALYAR, C. BELL, M. ANWAR-UL-HAQ, and A. R. MAKHDOOM. "NICKEL THIN FILMS GROWN BY PULSED LASER DEPOSITION: INFLUENCE OF SUBSTRATE AND SUBSTRATE TEMPERATURE." Digest Journal of Nanomaterials and Biostructures 15, no. 4 (December 2020): 1141–51. http://dx.doi.org/10.15251/djnb.2020.154.1141.

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Nickel thin films were grown on glass and copper substrate in ultrahigh vacuum at energy density 2×1010 watt/cm2 using Nd:YAG laser. XRD analysis showed the amorphous growth of thin film at low substrate temperature (Ts) while higher Ts supported crystalline growth. Magnetic moment, magnetic residual ratio and coercivity of thin films decreased with increase in Ts for both substrates. However, this decrease was sharp for films deposited on glass substrate as compared to that deposited on copper in Ts range 100oC-500oC. Electrical resistivity of thin film grown on glass substrate decreased while Hall carrier mobility increased with increase in Ts

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13

Vieira, R. A., and Maria do Carmo de Andrade Nono. "Characterisation of Titanium Nitride Thin Films Deposited by Cathodic Arc Plasma Technique on AISI D6 Tool Steel." Materials Science Forum 498-499 (November 2005): 717–21. http://dx.doi.org/10.4028/www.scientific.net/msf.498-499.717.

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TiN thin film has been produced on the surface of AISI D6 tool steel by using a titanium interlayer. In this work, the morphology, the microstructure and interface depth profile of TiN films deposited at two substrate temperatures (220 oC and 450 oC) in the coating process are presented and discussed. The AISI D6 tool steel substrates were coated with titanium thin film as the underlayer and with TiN thin film as the top layer. They were deposited by conventional cathodic arc process. The surfaces of TiN films were observed by scanning electron microscopy (SEM). The microstructure of these samples was analysed by X-ray diffractometry (XRD). The influence of the substrate temperature on the TiN film-Ti film-AISI D6 interface region were investigated by energy dispersive spectrometry (EDS) and its cross section were observed using backscattered electron image (BEI). The results showed that TiN films deposited at 220 oC formed a film of strongly (111) preferred orientation, while in 450 oC formed a film of (111) and (220) preferred orientation. The thickness of the TiN films increased with increasing substrate temperature. The results show that the interface region of the TiN film-Ti film-AISI D6 substrate system was significantly improved when higher substrate temperature during deposition is used.

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Eibl, O., G. Gieres, and H. Behner. "Microstructure of YBa2Cu3O7-x thin films deposited by dc sputtering." Proceedings, annual meeting, Electron Microscopy Society of America 47 (August 6, 1989): 172–73. http://dx.doi.org/10.1017/s0424820100152835.

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The microstructure of high-Tc YBa2Cu3O7-X thin films deposited by DC-sputtering on SrTiO3 substrates was analysed by TEM. Films were either (i) deposited in the amorphous state at substrate temperatures < 450°C and crystallised by a heat treatment at 900°C (process 1) or (ii) deposited at around 740°C in the crystalline state (process 2). Cross sections were prepared for TEM analyses and are especially useful for studying film substrate interdiffusion (fig.1). Films deposited in process 1 were polycristalline and the grain size was approximately 200 nm. Films were porous and the size of voids was approximately 100 nm. Between the SrTiO3 substrate and the YBa2Cu3Ox film a densly grown crystalline intermediate layer approximately 150 nm thick covered the SrTiO3 substrate. EDX microanalyses showed that the layer consisted of Sr, Ba and Ti, however, did not contain Y and Cu. Crystallites of the layer were carefully tilted in the microscope and diffraction patterns were obtained in five different poles for every crystallite. These patterns were consistent with the phase (Ba1-XSrx)2TiO4. The intermediate layer was most likely formed during the annealing at 900°C. Its formation can be understood as a diffusion of Ba from the amorphously deposited film into the substrate and diffusion of Sr from the substrate into the film. Between the intermediate layer and the surface of the film the film consisted of YBa2Cu3O7-x grains. Films prepared in process 1 had Tc(R=0) close to 90 K, however, critical currents were as low as jc = 104A/cm2 at 77 K.

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Jimeénez, R., A. Gonzaález, M. L. Calzada, and J. Mendiola. "Study of electrolytic laminated ferroelectric thin films from electroded substrates." Journal of Materials Research 15, no. 5 (May 2000): 1041–44. http://dx.doi.org/10.1557/jmr.2000.0148.

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An electrolytic process is described to peel off ferroelectric thin films from electroded substrates. This procedure was used to study the evolution of stress in ferroelectric calcium-modified lead titanate thin films. Stresses developed during the different steps of the preparation of the film on the substrate were calculated from curvature radii of the deposited films after each step. During the film preparation, the substrate was permanently deformed by the generated stresses. This was shown by curvature of the substrate after the electrolytic separation of the film. The laminated film liberated a large amount of stresses, as deduced from the lattice parameters of the deposited and laminated film, obtained by x-ray diffraction. The moderate residual stress that the laminated film maintained could be associated with intrinsic defects of the film.

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Muhamad Sauki, Nur Sa’adah, Sukreen Hana Herman, Mohd Hanafi Ani, and Mohamad Rusop. "Electrical Properties Dependence on Substrate Temperature of Sputtered ZnO Nanoparticles Thin Films on Teflon Substrates." Advanced Materials Research 795 (September 2013): 403–6. http://dx.doi.org/10.4028/www.scientific.net/amr.795.403.

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Zinc oxide (ZnO) thin films were deposited on teflon substrates by RF magnetron sputtering at different substrate temperature. The effect of substrate temperature on ZnO thin films electrical and structural properties were examined using current-voltage (I-V) measurement, and x-ray diffraction (XRD) It was found that the electrical conductivity and resistivity of the ZnO thin film deposited at 40°C was the highest and lowest intensity accordingly. This was supported by the crystalline quality of the films from the x-ray diffraction (XRD) results. The XRD pattern showed that the ZnO thin film deposited at 40°C has the highest intensity with the narrowest full-width-at-half-maximum indicating that the film has the highest quality compared to other thin film.

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17

Sato, Yuichi, Toshifumi Suzuki, Hiroyuki Mogami, Fumito Otake, Hirotoshi Hatori, and Suguru Igarashi. "Solid Phase Growth of some Metal and Metal Oxide Thin Films on Sapphire and Quartz Glass Substrates." Materials Science Forum 753 (March 2013): 505–9. http://dx.doi.org/10.4028/www.scientific.net/msf.753.505.

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Solid phase growth of thin films of copper (Cu), aluminum (Al) and zinc oxide (ZnO) on single crystalline sapphire and quartz glass substrates were tried by heat-treatments and their crystallization conditions were investigated. ZnO thin films relatively easily recrystallized even when they were deposited on the amorphous quartz glass substrate. On the other hand, Cu and Al thin films hardly recrystallized when they were deposited on the quartz glass substrate. The metal thin films could be recrystallized at only extremely narrow windows of the heat-treatment conditions when they were deposited on the single crystalline sapphire substrate. The window of the solid phase heteroepitaxial growth condition of the Al film was wider than that of the Cu film.

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Tsai, Fa Ta, Chin Tun Chuang, Tsai Cheng Li, and Pei Chi Yu. "Study of Parylene-C Thin Film Deposited on Flat Substrates." Applied Mechanics and Materials 217-219 (November 2012): 1077–82. http://dx.doi.org/10.4028/www.scientific.net/amm.217-219.1077.

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This work aims to enhance the surface wettability and adhesion of Parylene-C (poly-chloro-p-xylylene C) thin film on PMMA, glass and aluminum substrates by chemical vapor deposition. The results show that: (1) 0.56, 1, and 1.55g Parylene-C powders can deposit 200, 400, and 600nm films, respectively. (2) After oxygen-plasma pretreatment, the surface roughness of the 200nm-thickness film on glass substrate specimens decreases from 18nm to 7nm. (3) After dipped in prescription solution pretreatment, the residual stress reduces from 107MPa to 64MPa on glass substrate specimens. (4) In contact angle tests, the 600nm-thickness film on various flat substrates deposited process that has surface hydrophobic. (5) The critical load of 600nm-thickness film increases from 14.1 to 18.5mN, showing the substrate after dipped in prescription solution pretreatment can improve the adhesion of the Parylene-C thin film on flat glass substrate specimens.

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19

Zhang, Xiaolin, Yi Ding, Honglu Ma, Ruibin Zhao, Liangquan Wang, and Fanyong Zhang. "Microstructure and Mechanical Properties of Co-Deposited Ti-Ni Films Prepared by Magnetron Sputtering." Coatings 13, no. 3 (February 27, 2023): 524. http://dx.doi.org/10.3390/coatings13030524.

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Ti-Ni films with various Ni contents (16.5, 22.0, 33.5 at. %) were deposited on Al alloy substrates using DC magnetron co-sputtering. The effects of Ni target power and substrate bias (−10, −70, −110 V) on morphologies, crystallography, nanomechanical properties and scratch behavior of films were studied. All the deposited Ti-Ni films exhibited a BCC structure of β-Ti (Ni). The Ti-Ni films grew with a normal columnar structure with good bonding to substrates. When increasing the Ni target power and substrate bias, the grain size grew larger and the surface became denser. The as-deposited Ti-Ni films significantly improved the hardness (>4 GPa) of the Al alloy substrate. With the increase of bias voltage, the hardness and modulus of the film increased. The hardness and modulus of the Ti-22.0Ni film prepared at −70 V bias were 5.17 GPa and 97.6 GPa, respectively, and it had good adhesion to the substrate.

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20

Mittra, Joy, Geogy Jiju Abraham, Manoj Kesaria, Sumit Bahl, Aman Gupta, Sonnada M. Shivaprasad, Chebolu Subrahmanya Viswanadham, Ulhas Digambar Kulkarni, and Gautam Kumar Dey. "Role of Substrate Temperature in the Pulsed Laser Deposition of Zirconium Oxide Thin Film." Materials Science Forum 710 (January 2012): 757–61. http://dx.doi.org/10.4028/www.scientific.net/msf.710.757.

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Thin films of zirconium oxide have been deposited using pulsed laser deposition on Zr-base alloy substrates, held at 300 K, 573 K and 873 K, in order to understand the effect of substrate temperature on the deposited film. In this study, a KrF excimer laser having 30 ns pulse width and 600 mJ energy at source has been used for depositing the films from a sintered ZrO2 target using a laser fluence of 5 J.cm-2. After visual observation, deposited thin films were examined using Raman Spectroscopy (RS) and X-ray Photo-electron Spectroscopy (XPS). It has been found that the oxide deposited at 300 K temperature does not show good adherence with the substrate. The oxide films deposited at 573 K and 873 K are found to be adherent with the substrate and lustrous black in appearance. Thin films of zirconia, deposited using pulsed laser on the Zr-base metallic substrate are initially in amorphous state and possibly little deficient in oxygen. The substrate temperature and the duration of holding at high temperature are responsible for the evolution of nanocrystals in the deposited thin films. The stoichiometry of the amorphous oxide film supports its crystallization, below 573 K, into monoclinic and tetragonal phases and not into cubic phase.

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Martinschitz, K. J., E. Eiper, S. Massl, H. Köstenbauer, R. Daniel, G. Fontalvo, C. Mitterer, and J. Keckes. "Rapid determination of stress factors and absolute residual stresses in thin films." Journal of Applied Crystallography 39, no. 6 (November 10, 2006): 777–83. http://dx.doi.org/10.1107/s002188980603322x.

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A methodology is presented that allows the determination of experimental stress factors in thin films on the basis of static diffraction measurements. The approach relies on the characterization of thin films deposited on a monocrystalline substrate serving as a mechanical sensor. Rocking-curve measurements of the symmetrical reflections of the substrate are used to determine the substrate curvature and subsequently the macroscopic stress imposed on the film. The elastic strain in the film is determined by lattice-spacing measurement at different sample tilt angles. The calculated experimental stress factors are applied to thin films deposited on other types of substrates and are used to determine the absolute magnitude of the residual stress. The approach is applied to nanocrystalline TiN and CrN thin films deposited on Si(100) and steel substrates, characterized using a laboratory-type θ/θ goniometer.

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Fang, Y., V. R. Sakhalkar, J. He, H. Q. Jiang, Jiechao Jiang, and Efstathios I. Meletis. "Growth, Microstructure and Properties of Epitaxial La_1-XSr_xMnO₃ Thin Films on Various Substrates Using RF Magnetron Sputtering." Journal of Nano Research 14 (April 2011): 83–92. http://dx.doi.org/10.4028/www.scientific.net/jnanor.14.83.

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Synthesis of high quality epitaxial LaMnO3 and (La,Sr)MnO3 films on large areas is highly desirable. Recently, we have deposited LaMnO3 and (La,Sr)MnO3 films on the MgO (001) and LaAlO3 (001) substrates using RF magnetron sputtering. Highly epitaxial quality thin films have been successfully obtained at 750 °C by manipulating processing parameters as characterized by X-ray diffraction, electron diffraction and HRTEM. The epitaxial LaMnO3 and (La,Sr)MnO3 thin films have either a tetragonal or orthorhombic crystal structure depending on the film (target) composition and substrate type. The (La,Sr)MnO3 films were found to have an orthorhombic crystal structure when deposited on LaAlO3 substrate and a tetragonal structure when deposited on MgO substrate; whereas LaMnO3 films have a tetragonal structure when deposited on LaAlO3 substrate and an orthorhombic crystal structure when deposited on MgO substrate. The orthorhombic structures of the (La,Sr)MnO3 film on LaAlO3 and LaMnO3 on MgO are oriented with their c-axis on the film plane. Magnetic studies show that the epitaxial films have higher phase transition temperature than the corresponding bulk material and to those obtained using pulse laser deposition. Successful synthesis of highly epitaxial quality films by RF magnetron sputtering over a larger area can result in reduced cost for fabricating and processing epitaxial thin films.

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23

Yan, Bao Jun, Shu Lin Liu, Xiao Wei Liu, and Ting Ting Jiang. "Effect of Hydrogen Dilution Ratio and Substrate Roughness on the Microstructure of Intrinsic Microcrystalline Silicon Thin Films." Advanced Materials Research 936 (June 2014): 202–6. http://dx.doi.org/10.4028/www.scientific.net/amr.936.202.

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Intrinsic microcrystalline silicon (μc-Si:H) thin films were deposited on four kinds of substrates (polished quartz glass: PG, Rough quartz glass: RG, Textured SnO2:F coated glass: TG, Textured ZnO:Al coated glass: ZG) by 13.56 MHz plasma enhanced chemical vapor deposition (PECVD) with different hydrogen dilution ratio (RH=H2/SiH4) under the pressure of 2 Torr. The film thickness, crystalline volume fraction (XC) and substrate surface roughness (Ra) were measured by surface profilometer, Raman spectra and atom force microscopy (AFM), respectively. The results revealed that with the increase of RH, the deposition rate decreased and XC increased monotonously for the films deposited on the same substrate, but the substrate Ra had an obvious impact on the film microstructure. A physical model was proposed to illustrate the growth of the μc-Si:H thin films deposited on substrates with different Ra.

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24

Gui, X., Y. Y. Su, S. Y. Li, J. Mei, H. Sun, Yong Xiang Leng, and N. Huang. "Tribological Properties of Hydrogenated Amorphous Carbon (a-C:H) Films on Aluminium Alloy Substrate under Different Substrate Bias Voltages." Materials Science Forum 687 (June 2011): 784–90. http://dx.doi.org/10.4028/www.scientific.net/msf.687.784.

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Hydrogenated amorphous carbon (a-C:H) films were deposited on aluminium alloy substrates by microwave electron cyclotron resonance chemical vapor deposition(ECR-PECVD) at different substrate pulse bias voltage. In order to enhance the interface bonding strength between the film and Al alloy substrate, a 50nm silicon film was firstly fabricated on aluminium alloy substrate by unbalanced magnetron sputtering. The fiction and wear properties of the a-C:H films were evaluated using a ball-on-disk tribometer in air at room temperature. The results showed that the tribological properties of the a-C:H films decreased with the substrate bias voltage increased from -150 to -1000V. The a-C:H films deposited at -150V bias voltage had the best wear resistance.

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Huang, Jen Ching, Yi Chia Liao, Huail Siang Liu, and Fu Jen Cheng. "The Study on Deposition Process and Mechanical Properties of Deposited Cu Thin Films Using Molecular Dynamics." Advanced Materials Research 684 (April 2013): 37–41. http://dx.doi.org/10.4028/www.scientific.net/amr.684.37.

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This paper studies the deposition process and mechanical properties of Cu thin films deposited on single crystal copper substrates with various surface roughnesses by molecular dynamics (MD). In the effect of vacancy concentration (Cv) of substrate, the Young's modulus of sample decreased as the Cv of substrate increased but the adhesion force will increase as the Cv of substrate increases. The effect of substrate roughness on the peak intensity of crystal orientation has little. And the greater Cv of substrate, the surface roughness of the deposited thin film also increased. In the effect of numbers of deposited atoms, the deposited thin film thickness increases, the surface will be relatively flat and the Young's modulus will also increase. By the XRD pattern, the principal growth directions of thin film are the (220) and (200) in the early stage of growth during deposition. However, with the thickness increasing, the (111) will be the preferred orientation.

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Ibuki, Chuleerat, and Rachasak Sakdanuphab. "Structural, Morphological and Adhesion Properties of Cofeb Thin Films Deposited by DC Magnetron Sputtering." Advanced Materials Research 802 (September 2013): 47–52. http://dx.doi.org/10.4028/www.scientific.net/amr.802.47.

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In this work the effects of amorphous (glass) and crystalline (Si) substrates on the structural, morphological and adhesion properties of CoFeB thin film deposited by DC Magnetron sputtering were investigated. It was found that the structure of a substrate affects to crystal formation, surface morphology and adhesion of CoFeB thin films. The X-Ray diffraction patterns reveal that as-deposited CoFeB thin film at low sputtering power was amorphous and would become crystal when the power increased. The increase in crystalline structure of CoFeB thin film is attributed to the crystalline substrate and the increase of kinetic energy of sputtering atoms. Atomic Force Microscopy images of CoFeB thin film clearly show that the roughness, grain size, and uniformity correlate to the sputtering power and the structure of substrate. The CoFeB thin film on glass substrate shows a smooth surface and a small grain size whereas the CoFeB thin film on Si substrate shows a rough surface and a slightly increases of grain size. Sticky Tape Test on CoFeB thin film deposited on glass substrate indicates the adhesion failure with a high sputtering power. The results suggest that the crystalline structure of substrate affects to the atomic bonding and the sputtering power affects to intrinsic stress of CoFeB thin film.

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Wang, Y. L., M. C. Li, X. K. Chen, G. Wu, J. P. Yang, R. Wang, and L. C. Zhao. "Nano-Polycrystalline Vanadium Oxide Thin Films Prepared by Pulsed Laser Deposition." Journal of Nanoscience and Nanotechnology 8, no. 5 (May 1, 2008): 2604–8. http://dx.doi.org/10.1166/jnn.2008.18290.

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Nano-polycrystalline vanadium oxide thin films have been successfully produced by pulsed laser deposition on Si(100) substrates using a pure vanadium target in an oxygen atmosphere. The vanadium oxide thin film is amorphous when deposited at relatively low substrate temperature (500 °C) and enhancing substrate temperature (600–800 °C) appears to be efficient in crystallizing VOx thin films. Nano-polycrystalline V3O7 thin film has been achieved when deposited at oxygen pressure of 8 Pa and substrate temperature of 600 °C. Nano-polycrystalline VO2 thin films with a preferred (011) orientation have been obtained when deposited at oxygen pressure of 0.8 Pa and substrate temperatures of 600–800 °C. The vanadium oxide thin films deposited at high oxygen pressure (8 Pa) reveal a mix-valence of V5+ and V4+, while the VOx thin films deposited at low oxygen pressure (0.8 Pa) display a valence of V4+. The nano-polycrystalline vanadium oxide thin films prepared by pulsed laser deposition have smooth surface with high qualities of mean crystallite size ranging from 30 to 230 nm and Ra ranging from 1.5 to 22.2 nm. Relative low substrate temperature and oxygen pressure are benifit to aquire nano-polycrystalline VOx thin films with small grain size and low surface roughness.

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Mao, Fei Xiong, Tao Liu, Shi Wei Liu, and Jing Kun Yu. "The Influence of Zirconia Substrate Temperature on the Microstructure and Adhesion of Deposited Mg Films." Advanced Materials Research 472-475 (February 2012): 2834–38. http://dx.doi.org/10.4028/www.scientific.net/amr.472-475.2834.

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Mg films were prepared by magnetron sputtering on zirconia substrate. The surface morphology, structure and adhesion performance were determined by scanning electron microscopy (SEM), X-ray diffraction (XRD) and automatic nano scratch tester, respectively. The results show that the Mg films deposited on the substrates at 50 °C, 200 °C, 300 °C are mainly of hexagonal phase with the crystal planes (002) in highly preferred orientation that is weaken with the substrate temperature increased. After annealed at 230 °C, the quality of thin film deposited on the substrate at 50 °C can be improved as crystallizability enhanced and grain size increased. The adhesion of Mg film increases firstly, and then decreases with increasing the substrate temperatures.

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29

Kusano, Eiji. "Dependence of film structure on the film structure-independent equivalent film thickness in magnetron sputtering deposition of Ag thin films." Journal of Vacuum Science & Technology A 40, no. 5 (September 2022): 053405. http://dx.doi.org/10.1116/6.0001989.

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In this work, I have investigated the structures and properties of Ag thin films deposited by magnetron sputtering onto glass substrates with temperatures of 150 and 600 °C for film structure-independent equivalent film thicknesses in the range of 20–400 nm. The Ag thin film morphologies observed using scanning electron microscopy and atomic force microscopy showed the following distinguishable changes: an Ag thin film with an equivalent film thickness of 20 nm deposited at a substrate temperature of 150 °C displayed a film microstructure of oblate grains separated by voids, while those with equivalent film thicknesses of 50 nm or more displayed microstructures consisting of flat-topped grains without any obvious voids between them. In comparison, an Ag thin film with an equivalent film thickness of 20 nm deposited at a substrate temperature of 600 °C displayed a microstructure consisting of isolated spherically shaped grains with a uniform diameter of approximately 40 nm and spaced at uniform intervals; an Ag thin film with an equivalent film thickness of 50 nm displayed a microstructure of more oblate grains; Ag thin films with equivalent film thicknesses of 100 and 200 nm displayed microstructures of highly isolated, flat-topped, mound-shaped grains; and an Ag thin film with an equivalent film thickness of 400 nm displayed a microstructure of continuous flat-topped, mound-shaped grains. In addition, the Ag thin films with equivalent film thicknesses of 20 and 50 nm deposited at 600 °C exhibited higher compressive stresses. The quantitative results of optical-transmittance and electrical resistivity measurements were consistent with the changes in thin film morphology. The morphological structures of the Ag thin films deposited at 600 °C result from the high surface diffusivity of the Ag atoms, which do not wet the glass substrate, whereas the morphologies of the Ag thin films deposited at 150 °C result from in-place grain growth following the formation of multiple nuclei because of the low surface diffusivity of the Ag atoms at this temperature. The observed thin film microstructures are unexplained by the classical structure model for sputter-deposited metal thin films, which does not consider either the high surface diffusivity of adatoms that do not wet the substrate or the increase in surface area required to dissipate the energy accumulating in grains during film deposition. The results obtained in this study provide a fundamental description and explanation of the grain structure of metal thin films with thicknesses of a few tens of nanometers or less.

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30

Aliyu, Mohammed Mannir. "Towards the fabrication of flexible thin film CdTe solar cells: The significance of substrate surfaces." Science World Journal 19, no. 1 (May 2, 2024): 245–47. http://dx.doi.org/10.4314/swj.v19i1.32.

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Thin film CdTe solar cells have been recognized as reliable alternative for the manufacture of cheap photovoltaic solar cells of the future, due to its excellent absorber characteristics and simple, low-cost manufacturability. However, for the attainment of higher cell performances, additional studies are needed to increase cell efficiency through further development of better quality films and new fabrication processes. In the substrate-structured CdTe thin film solar cells, the CdTe absorber layer is deposited directly onto the substrate or through a back contact layer. But the quality of deposited film is believed to depend on the type and smoothness of the substrate. In this work CdTe was deposited on different substrates by RF sputtering and the effects on the deposited films were studied in terms of their structural and morphological forms. The substrates used were: pure molybdenum sheets (Mo), molybdenum-sputtered on molybdenum (Mo/Mo), molybdenum-sputtered polyimide (PI/Mo) and molybdenum-sputtered glass (glass/Mo). The characterization tools used included XRD, SEM and AFM. The results showed that all surfaces produced uniform, compact and pinhole-free films; however, those on smoother surfaces produced larger as-deposited grain sizes of up to1.7μm as against 1.3 for rougher surfaces. Non-uniformities such as overgrowth and voids were observed, but only films on PI showed evidence of cracking and peel-offs.

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31

Ohba, Yoko, Takaaki Tsurumi, Etsuo Sakai, and Masaki Daimon. "Formation and Piezoelectric Property of PZT Film Synthesized Hydrothermally." Journal of Robotics and Mechatronics 11, no. 4 (August 20, 1999): 238–43. http://dx.doi.org/10.20965/jrm.1999.p0238.

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Crystalline lead zirconate titanate solid solution (PZT) films were deposited on titanium substrates hydrothermally with a flow. The composition and concentration of solution or slurry werte controlled by adding reactants during the reaction. Although the PZT layer showed the anticipated piezoelectric and dielectric constants, an intermediate layer was created between the PZT layer and Ti substrate. Bimorph bending actuators using the film were bent by voltage applied perpendicular to the film. Bending displacement of the actuator was calculated theoretically using a composite beam model in which both sides of a Ti substrate were covered by PZT films with an intermediate layer between the Ti substrate and PZT film. A comparison of measured and theoretical displacement suggested that the piezoelectric cinstant was comparable to that of PZT ceramics with the same composition. Polar axes in as-deposited film were aligned from the film surface to the substrate, so actuators were bent by applied voltage without poling. Bending displacement increased with decreasing intermediate layer thickness, consistent with the composite.

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32

Chang, H. L. M., T. J. Zhang, H. Zhang, J. Guo, H. K. Kim, and D. J. Lam. "Epitaxy, microstructure, and processing-structure relationships of TiO2 thin films grown on sapphire (0001) by MOCVD." Journal of Materials Research 8, no. 10 (October 1993): 2634–43. http://dx.doi.org/10.1557/jmr.1993.2634.

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TiO2 thin films have been deposited on sapphire (0001) substrates under various conditions by metal-organic chemical vapor deposition. The structural properties of the deposited films were characterized by x-ray diffraction and transmission electron microscopy. The important growth parameters were found to be the deposition temperature and the deposition rate. The ranges studied for the two parameters were 400 to 850 °C and 10 to 120 Å/min, respectively. Depending on the growth conditions, most of the deposited films were either single-phase anatase or rutile, or a mixture of the two. These films were all epitaxial, but none of them were single-crystal films. Three distinct epitaxial relationships were observed between the films and the substrates, and, depending on the growth conditions, a deposited film can contain one, two, or all three of them. The fact that the films we obtained, although epitaxial, were never single crystal is explained based on the consideration of the difference in the rotational symmetries of the substrate surface and the film growth plane. We believe that it should be generally true that, in heteroepitaxial growth, a true single-crystal film can never be obtained as long as the point symmetry group of the substrate surface is not a subgroup of that of the film growth plane.

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33

Liu, Huaiyuan, Donglin Ma, Yantao Li, Lina You, and Yongxiang Leng. "Evolution of the Shadow Effect with Film Thickness and Substrate Conductivity on a Hemispherical Workpiece during Magnetron Sputtering." Metals 13, no. 1 (January 13, 2023): 165. http://dx.doi.org/10.3390/met13010165.

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When depositing films on a complex workpiece surface by magnetron sputtering, the shadow effect occurs and causes the columnar structure to tilt toward the substrate owing to the oblique incident angle of the plasma flux, affecting the microstructure and properties of the films. Improving the surface diffusion could alleviate the shadow effect, whereas changing the energy of the deposited particles could improve surface diffusion. Different substrate conductivities could affect the energy of the deposited particles when they reach the substrate. In this study, Si (semiconductor) and SiO2 (insulator) sheets are mounted on the inner surface of a hemispherical workpiece, and Ti films with different thicknesses (adjusted by the deposition time) are deposited on the inner surface of the hemispherical workpiece by direct current magnetron sputtering. The results show that there is a threshold thickness and incident angle before the films are affected by the shadow effect. The threshold could be affected by the film thickness, the incident angle, and the conductivity of the substrate. The threshold would decrease as the film thickness or incidence angle increased or the conductivity of the substrate decreased. When the film thickness or incident angle does not reach the threshold, the film would not be affected by the shadow effect. In addition, the film deposited later would tilt the vertical columnar structure of the film deposited earlier. Owing to the different conductivities, the shadow effect manifest earlier for Ti films deposited on the insulator SiO2 than for films deposited on the semiconductor Si when the film thickness is >500 nm.

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34

Li, Yong Hua, F. L. Meng, Chang Sheng Liu, and Y. M. Wang. "Crack Spacing and the Flow Stress in NiTi Thin Films Deposited on Cu Substrate." Key Engineering Materials 385-387 (July 2008): 89–92. http://dx.doi.org/10.4028/www.scientific.net/kem.385-387.89.

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Ti-51.45at.%Ni thin films were deposited onto copper substrates by magnetron sputtering. The copper substrates were pre-punched into dog-bone specimens with 4.5mm×30mm(gauge portion) ×35µm( thickness). The substrate temperature was about 673K. The thin films were about 20µm thick. The as-deposited films were first solution treated at 1073K for 1h, and then aged at 773K for 30min. The grain size was estimated to be 1.5µm from scanning electron microscopy micrographs. Tensile tests were carried out on CSS-44100 electron universal test-machine. The strain rate was 1.1×10-4 s-1. The stress-strain curves of the free-standing film were obtained from the experimental stress-strain curves of copper substrate together with the thin film adherent to the substrate compared with the curves of copper substrate without film. The Hall-Patch coefficient was calculated, k=205Mpa.µm1/2. It seems that the Hall-Patch coefficient decreases with increasing film thickness. The experimental results showed that a series of parallel cracks grew in a concerted fashion across the thin film and the cracks were equally spaced. The cracks were more closely spaced if the film stress was increased. The fracture toughness of the film was estimated, c KΙ =0.96MPa·m1/2. Therefore, the minimum crack spacing is predicted by the film stress given.

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35

XIA, H., W. XIAO, M. O. LAI, and L. LU. "IMPROVED CAPACITIVE BEHAVIOR OF MnO2 THIN FILMS PREPARED BY ELECTRODEPOSITION ON THE PT SUBSTRATE WITH A MnOx BUFFER LAYER." Functional Materials Letters 02, no. 01 (March 2009): 13–18. http://dx.doi.org/10.1142/s1793604709000478.

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Nanostructured MnO 2 thin films were prepared on two types of substrates, Pt / Ti / SiO 2/ Si (PT) and MnO x/ Pt / Ti / SiO 2/ Si ( MnO x/ PT ), by the technique of cyclic-voltammetric electrodeposition. The MnO x buffer layer was deposited on the PT substrate by pulsed laser deposition (PLD). The as-deposited MnO 2 thin films were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), and X-ray photoelectron spectroscopy (XPS). The electrochemical properties of the thin film MnO 2 electrodes were investigated using cyclic voltammetry (CV) in 1 M Na 2 SO 4 electrolyte. It was found that the adhesion between the MnO 2 film and the Pt substrate was poor, resulting in cracks and peeling of the MnO 2 film after deposition. However, the adhesion of the MnO 2 film with the MnO x buffer layer was greatly improved, resulting in superior pseudocapacitive performance of the thin film electrodes. A specific capacitance of about 364 F/g of MnO 2 thin films deposited on the MnO x buffer layer can be obtained at a scan rate of 10 mV/s in the voltage window between 0 and 0.9 V versus the Ag / AgCl reference electrode. The MnO 2 thin film deposited on the MnO x/ PT substrate exhibits good rate capability and excellent cycle performance, which makes it promising for supercapacitor application.

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36

Ishii, Tatsuya, Hideyuki Homma, and Shigeo Yamaguchi. "Fabrication of a Peltier Device Based on InSb and SbTe Thin Films." Advanced Materials Research 254 (May 2011): 50–53. http://dx.doi.org/10.4028/www.scientific.net/amr.254.50.

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We fabricated a thin film Peltier device based on an InSb film and a SbTe film. N-type InSb thin films were grown on sapphire (0001) substrate with InAsSb buffer layer by metalorganic vapor phase epitaxy, and P-type SbTe thin films were deposited on the substrate by electron beam evaporation. N-type and P-type films were separated on the substrate, and between them, a Au thin film was deposited by direct-current sputtering. We observed partial Peltier effect in the device.

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37

LIU, W., Y. G. WANG, F. H. LI, H. C. LI, Y. Z. ZHANG, and L. LI. "ELECTRON DIFFRACTION AND LATTICE IMAGE STUDY OF HIGH Jc YBCO AND GBCO THIN FILMS." Modern Physics Letters B 04, no. 18 (October 10, 1990): 1163–70. http://dx.doi.org/10.1142/s021798499000146x.

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High resolution electron microscopy observations of YBa 2 Cu 3 O 7 thin films deposited on LaAlO 3 substrate and GdBa 2 Cu 3 O 7 thin films deposited on SrTiO 3 substrate are reported. The microstructure of films with different critical current densities Jc’s are compared. It was found that Jc becomes very high >106 A/cm 2 when the film is epitaxially single crystalline with c-axis perpendicular to the film surface. The effect of grain boundaries and defects in the film on Jc was discussed. The effect of the smoothness, orientation and lattice constants of the substrate on the quality of the deposited film was also discussed.

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38

Saliy, Ya P., and L. I. Nykyruy. "Influence of surface morphology on electrophysical properties of PbTe: Sb films." Physics and Chemistry of Solid State 22, no. 3 (July 16, 2021): 415–19. http://dx.doi.org/10.15330/pcss.22.3.415-419.

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The electrophysical properties of polycrystalline doped semiconductor thin films PbTe: Sb deposited on mica and sital (glass based ceramic) substrates are considered. The thickness dependencies of carrier mobility, of Hall coefficient and of Seebeck coefficient, and the correlations between these parameters for films deposited on different substrate materials were studied. The peculiarities of growth of thin films and their structural parameters are analyzed taking into account the features of the ‘substrate – film’ boundary section.

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39

Dong, Ling, Yang Li, Hongchuan Jiang, Xiaohui Zhao, and Wanli Zhang. "Effect of substrate type on the lattice structure of AlN thin films annealed at high temperature." Journal of Physics: Conference Series 2342, no. 1 (September 1, 2022): 012009. http://dx.doi.org/10.1088/1742-6596/2342/1/012009.

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Abstract To measure the surface temperature of aerospace hot-end components accurately, AlN thin film temperature measurement technology is being explored. The core of this temperature measurement technology is the evolution law of the lattice structure with temperature, but the influence of substrate on its lattice structure is still unclear. In this research, C-axis preferred orientation AlN thin films were deposited on Ni-based superalloy and quartz glass substrates by Mid-frequency reactive magnetron sputtering. The effect of substrate type on the lattice structure of annealed AlN thin films was investigated. It was found that with the increase of temperature, the lattice structure parameters (2θ) of AlN thin films deposited on Ni-based superalloy gradually shifted to the left, while those of AlN thin films deposited on quartz glass keep a constant until 1300 °C. The results reveal that quartz glass substrate has no influence on the lattice structure of AlN thin films as long as the temperature is lower than 1300 °C. Quartz glass substrates are suitable for follow-up research of AlN thin film temperature measurement technology.

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40

Deng, Wen Yuan. "Optical Characterization of LaF₃ by Variable Angle Purged UV Spectroscopic Ellipsometry." Advanced Materials Research 662 (February 2013): 243–48. http://dx.doi.org/10.4028/www.scientific.net/amr.662.243.

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The optical characterization of LaF3 thin film in DUV spectral range was experimental investigated by using a variable angle purged UV spectroscopic ellipsometer. In order to take into account the inhomogeneity, a theory model that dividing the single thin film into several sublayers was adopted. Two kinds of LaF3 thin films fabricated on fused silicate substrate with different substrates temperature were tested. From the obtained optical index and the physical thickness of different sublayer in the two different kinds of LaF3 thin films, it was found that, the inhomogeneity of the LaF3 thin film deposited with substrate temperature at 300°C was stronger than that of the LaF3 thin film deposited with substrate temperature at 250°C, indicating that the substrate temperature has important influence on the optical index and inhomogeneity of LaF3 thin films. For both of the two kinds LaF3 thin films, the agreement between the measured transmittance and the simulated transmittance using the parameters from regression of SE was nice, indicating that the selection of the material dispersion law and regression procedure were successful.

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41

Balzano, Vincenzo, Emanuele Cavaliere, Mattia Fanetti, Sandra Gardonio, and Luca Gavioli. "The Role of Substrate on Thermal Evolution of Ag/TiO2 Nanogranular Thin Films." Nanomaterials 11, no. 9 (August 31, 2021): 2253. http://dx.doi.org/10.3390/nano11092253.

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In multicomponent thin films, properties and functionalities related to post-deposition annealing treatments, such as thermal stability, optical absorption and surface morphology are typically rationalized, neglecting the role of the substrate. Here, we show the role of the substrate in determining the temperature dependent behaviour of a paradigmatic two-component nanogranular thin film (Ag/TiO2) deposited by gas phase supersonic cluster beam deposition (SCBD) on silica and sapphire. Up to 600 °C, no TiO2 grain growth nor crystallization is observed, likely inhibited by the Zener pinning pressure exerted by the Ag nanoparticles on the TiO2 grain boundaries. Above 600 °C, grain coalescence, formation of However, the two substrates steer the evolution of the film morphology and optical properties in two different directions. anatase and rutile phases and drastic modification of the optical absorption are observed. On silica, Ag is still present as NPs distributed into the TiO2 matrix, while on sapphire, hundreds of nm wide Ag aggregates appear on the film surface. Moreover, the silica-deposited film shows a broad absorption band in the visible range while the sapphire-deposited film becomes almost transparent for wavelengths above 380 nm. We discuss this result in terms of substrate differences in thermal conductivity, thermal expansion coefficient and Ag diffusivity. The study of the substrate role during annealing is possible since SCBD allows the synthesis of the same film independently of the substrate, and suggests new perspectives on the thermodynamics and physical exchanges between thin films and their substrates during heat treatments.

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42

Watazu, Akira, Kay Teraoka, and Tsutomu Sonoda. "Titanium Nitride Film on Titanium Film by Magnetron Sputtering Method." Key Engineering Materials 782 (October 2018): 176–81. http://dx.doi.org/10.4028/www.scientific.net/kem.782.176.

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Titanium nitride (TiN) film on titanium film (Ti) was formed by magnetron sputtering method. Pure titanium substrates with TiN/Ti multi-layered films deposited using DC sputter-deposition machine in Ar gas atmosphere, in order to improve not only the blood compatibility of pure titanium but also the adhesion between the deposited TiN coating and the pure titanium substrate. The effects of the thickness of a pure titanium interlayer on adhesion of the TiN coating to the pure titanium substrate were investigated. And the effects of the TiN coating obtained in this study on blood compatibility were also investigated. The obtained multi-layered films looked yellow gold and appeared to be uniform and adhesive without any peel-offs. Based on the results of the platelet test, the ratio of the number of adhered platelets for the TiN/Ti film to that for the pure titanium substrate was estimated to be 0.54. Thus it was found that the platelet adhesion of the obtained TiN/Ti film was much smaller than the pure titanium, concluding that the TiN coating improved the blood compatibility.

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43

Won, Sung Bin, Min Jung Kim, Chun Yu Xu, Yeon Sang Hwang, and Dong Bok Lee. "High Temperature Oxidation of CrAlSiN Thin Films." Advanced Materials Research 699 (May 2013): 612–15. http://dx.doi.org/10.4028/www.scientific.net/amr.699.612.

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Nano-multilayered, crystalline CrAlSiN thin films were deposited on either steel or WC-10%Co substrates by the cathodic arc plasma deposition. Their oxidation characteristics were studied at 800-1000°C for 50 h in air. The film deposited on steel displayed good oxidation resistance, due mainly to formation of Cr2O3 and α-Al2O3. The film deposited on WC-10%Co displayed poor oxidation resistance, due mainly to the oxidation of the substrate.

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44

Ikenaga, Noriaki, Yoichi Kishi, Zenjiro Yajima, and Noriyuki Sakudo. "Influence of Substrate Temperature on Texture for Deposited TiNi Films." Advances in Science and Technology 59 (September 2008): 30–34. http://dx.doi.org/10.4028/www.scientific.net/ast.59.30.

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In order to fabricate two-dimensional micro actuators with shape memory alloy films, it is especially important to evaluate the anisotropy of transformation strain that is caused by texture. In this paper, microstructures of sputter-deposited TiNi films are examined. The films of 1 μm in thickness are sputter-deposited on Si(001) substrates by RF magnetron multi-sputtering system equipped with four separate confocal sources as well as with substrate heating. Pure Ti and Ni targets of 50 mm in diameter are used for the sources. The films deposited at ambient temperature have been generally amorphous. However, we find that some films which are deposited at 773K of substrate temperature are crystalline, when we appropriately choose sputtering parameters such as source voltage and the distance between a target and the substrate. X-ray powder diffraction and pole figure measurements reveal that these films are oriented with {110}B2 parallel or inclined at 45 degree to the substrate. Furthermore, we also find that crystallized film is deposited even at 673K of substrate temperature by applying pulse bias voltage to the substrate.

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45

Rogozhin, Alexander, Andrey Miakonkikh, Elizaveta Smirnova, Andrey Lomov, Sergey Simakin, and Konstantin Rudenko. "Plasma Enhanced Atomic Layer Deposition of Ruthenium Films Using Ru(EtCp)2 Precursor." Coatings 11, no. 2 (January 21, 2021): 117. http://dx.doi.org/10.3390/coatings11020117.

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Ruthenium thin films were deposited by plasma-enhanced atomic layer deposition (PEALD) technology using Ru(EtCp)2 and oxygen plasma on the modified surface of silicon and SiO2/Si substrates. The crystal structure, chemical composition, and morphology of films were characterized by grazing incidence XRD (GXRD), secondary ion mass spectrometry (SIMS), and atomic force microscopy (AFM) techniques, respectively. It was found that the mechanism of film growth depends crucially on the substrate temperature. The GXRD and SIMS analysis show that at substrate temperature T = 375 °C, an abrupt change in surface reaction mechanisms occurs, leading to the changing in film composition from RuO2 at low temperatures to pure Ru film at higher temperatures. It was confirmed by electrical resistivity measurements for Ru-based films. Mechanical stress in the films was also analyzed, and it was suggested that this factor increases the surface roughness of growing Ru films. The lowest surface roughness ~1.5 nm was achieved with a film thickness of 29 nm using SiO2/Si-substrate for deposition at 375 °C. The measured resistivity of Ru film is 18–19 µOhm·cm (as deposited).

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46

XU, FANGCHAO, and KAZUHIRO KUSUKAWA. "ADHESION ASSESSMENT OF BNT FILMS ON TITANIUM SUBSTRATES USING A TENSILE TEST." International Journal of Modern Physics: Conference Series 06 (January 2012): 473–78. http://dx.doi.org/10.1142/s2010194512003637.

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Lead-free piezoelectric ( Bi 1/2 Na 1/2) TiO 3 (abbreviated as BNT) films were deposited on 1 mm thick pure titanium( Ti ) substrates by a hydrothermal method. Tensile tests were performed to quantitatively assess the adhesion strength between BNT films and Ti substrates. Ti substrates were pretreated by chemical polish and mechanical polish respectively prior to BNT film deposition. In the tensile test, the behavior of BNT film exfoliation was investigated by the replica method. The critical Ti substrate strain inducing BNT film exfoliation was determined by the aid of finite element analysis (FEM). In this study, the results revealed that BNT film exfoliations were caused by the strain of Ti substrate, and the mechanical polish pretreatment improved the adhesion of BNT film to Ti substrate.

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47

Malshe, A. P., S. M. Chaudhari, S. M. Kanetkar, S. B. Ogale, S. V. Rajarshi, and S. T. Kshirsagar. "Properties of carbon films deposited by pulsed laser vaporization from pyrolytic graphite." Journal of Materials Research 4, no. 5 (October 1989): 1238–42. http://dx.doi.org/10.1557/jmr.1989.1238.

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Amorphous carbon films have been deposited on silicon 〈111〉 and quartz substrates by pulsed ruby laser vaporization from pyrolytic graphite. Depositions have been carried out at different substrate temperatures, and the properties of the deposited carbon films have been studied using IR and UV–VIS transmission, ellipsometry, and laser-Raman spectroscopies. Chemical and electrical resistivity measurements have also been performed. It is shown that the film properties depend critically on the substrate temperature and that at the substrate temperature of 50 °C films with substantial proportion of sp3 hybridized orbitals are obtained.

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48

Wang, Zhi Hao, Yong Xiang Leng, Nan Huang, and Min Hao Zhu. "Adhesion Evaluation of Titanium Oxides Films on 316L Stainless Steel Substrate." Key Engineering Materials 353-358 (September 2007): 2127–30. http://dx.doi.org/10.4028/www.scientific.net/kem.353-358.2127.

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Titanium oxides films were deposited on tensile sample and vascular stents made of 316L stainless steel by unbalanced magnetron sputtering. The effects of structures, deposition temperature, Ti interlayer and thickness on the adhesion of titanium oxide films were investigated by tensile tests. The results revealed that the structure of the Ti-O films affect their adhesion dramatically. TiO film is brittle and fragile, lacking ability of deformation. Therefore its adhesion was worse than that of TiO2 film. The higher substrate temperature was helpful to improve adhesion of film, the adhesion of the TiO film deposited at 673K was better than those of the TiO films deposited at 323K and 473K. The adhesion of the TiO film with Ti interlayer was better than the one without interlayer. The introduction of Ti interlayer was beneficial to adhesion of film. The adhesion of thinner TiO2 film was better than that of thicker one. TiO2 film deposited on stents had good adhesion. After expansion, the film didn’t crack and peel off. TiO2 film has potential application on the vascular stents for improving its blood compatibility.

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Hwang, Cheol Seong, and Hyeong Joon Kim. "Deposition and characterization of ZrO2 thin films on silicon substrate by MOCVD." Journal of Materials Research 8, no. 6 (June 1993): 1361–67. http://dx.doi.org/10.1557/jmr.1993.1361.

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ZrO2 thin films were deposited at 1 atm on Si substrates by oxidation-assisted thermal decomposition of zirconium-trifluoroacetylacetonate in the temperature range of 300–615 °C. Above a deposition temperature of 400 °C, the deposited thin films have a columnar grain structure, where each grain is perpendicular to the substrate surface with a c-axis preferred crystallographic orientation, and have poor electrical characteristics as a dielectric thin film. But the thin film deposited at 350 °C has a fine equiaxed microcrystalline structure and has superior electrical characteristics of a breakdown field of 1 MV/cm and a relative dielectric constant of 27.

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50

Teodorescu, Valentin S., and Marie-Genevieve Blanchin. "Fast and Simple Specimen Preparation for TEM Studies of Oxide Films Deposited on Silicon Wafers." Microscopy and Microanalysis 15, no. 1 (January 15, 2009): 15–19. http://dx.doi.org/10.1017/s1431927609090011.

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AbstractWe present a fast and simple method to prepare specimens for transmission electron microscopy studies of oxide thin films deposited on silicon substrates. The method consists of scratching the film surface using a pointed diamond tip, in a special manner. Small and thin fragments are then detached from the film and its substrate. Depending on the scratching direction, the fragments can be used for plan-view or cross-section imaging. High-resolution images can be also obtained from thin edges of the film fragments. The method is demonstrated in the case of HfO2 sol-gel films deposited on [100] Si wafer substrates.

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Journal articles on the topic 'Film deposited on substrate'

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