Relevant bibliographies by topics / FIELD EMISSION OF CNT

Academic literature on the topic 'FIELD EMISSION OF CNT'

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Published: 11 September 2023

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Journal articles on the topic "FIELD EMISSION OF CNT"

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Liao, Qin Liang, Yue Zhang, Yun Hua Huang, Jun Jie Qi, and Zheng Zhang. "Investigation on the Plasma-Induced Electron Emission Properties of ZnO Nanorod and Carbon Nanotube Arrays." Materials Science Forum 654-656 (June 2010): 1150–53. http://dx.doi.org/10.4028/www.scientific.net/msf.654-656.1150.

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The plasma-induced emission properties of ZnO nanorod and carbon nanotube (CNT) arrays were investigated under the pulse electric field. The formation of plasma on the array surface was found and high intensity electron beams were obtained from the two kinds of arrays. The plasma-induced emission properties of the ZnO nanorod and CNT arrays have big differences. Under the same electric field, the CNT arrays have higher emission current than the ZnO nanorod arrays. With the emission currents changing, the electron emissions of the ZnO nanorod arrays always are very uniform; but that of the CNT arrays are non-uniform. The plasma expansion velocity of the ZnO nanorod arrays is lower than that of the CNT arrays. Accordingly, the emission stability of the ZnO nanorod arrays is better than that of the CNT arrays.
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Liu, Xingzhen, Weijin Qian, Yawei Chen, Mingliang Dong, Taxue Yu, Weijun Huang, and Changkun Dong. "Construction of CNT-MgO-Ag-BaO Nanocomposite with Enhanced Field Emission and Hydrogen Sensing Performances." Nanomaterials 13, no. 5 (February 27, 2023): 885. http://dx.doi.org/10.3390/nano13050885.

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CNTs and CNT-MgO, CNT-MgO-Ag, and CNT-MgO-Ag-BaO nanocomposites were grown on alloy substrates using an electrophoretic deposition method and their field emission (FE) and hydrogen sensing performances were investigated. The obtained samples were characterized by SEM, TEM, XRD, Raman, and XPS characterizations. The CNT-MgO-Ag-BaO nanocomposites showed the best FE performance with turn-on and threshold fields of 3.32 and 5.92 V.μm−1, respectively. The enhanced FE performances are mainly attributed to the reductions of the work function, and the enhancement of the thermal conductivity and emission sites. The current fluctuation of CNT-MgO-Ag-BaO nanocomposites was only 2.4% after a 12 h test at the pressure of 6.0 × 10−6 Pa. In addition, for the hydrogen sensing performances, the CNT-MgO-Ag-BaO sample showed the best increase in amplitude of the emission current among all the samples, with the mean IN increases of 67%, 120%, and 164% for 1, 3, and 5 min emissions, respectively, under the initial emission currents of about 1.0 μA.
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He, Hao, Chao Yuan, Er Jun Liang, and Shun Fang Li. "Field Emission of Gallium-Doped Carbon Nanotubes." Advanced Materials Research 535-537 (June 2012): 61–66. http://dx.doi.org/10.4028/www.scientific.net/amr.535-537.61.

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Field emission property of Ga-doped carbon nanotube (CNT) film has been studied and compared with those of un-doped, N-doped as well as B and N co-doped CNT films. It is found that the Ga-doped CNT film exhibits superior field emission property to the other films. The turn-on field for Ga-doped CNT film is well below 1.0 V/μm, lower than those for un-doped (2.22 V/μm), N-doped (1.1 V/μm), B and N co-doped (4.4 V/μm) CNT films. Its current density reaches 5000 μA/cm2at 2.6 V/μm which is well above those for un-doped (1400 μA/cm2), N-doped (3000 μA/cm2) as well as B and N co-doped (2) CNT films at applied electric field of 5.7 V/μm. First principles calculations were carried out to obtain the binding energy and electronic nature altering of a CNT by Ga doping. It is shown that Ga-doped CNT (8,0) alters from semiconductor to intrinsic metal and a binding energy of 2.7527 eV is obtained. The field emission property can not simply be explained by the defect concentration, but can be understood by significant altering in the local density of states near the Fermi level introduced by dopants.
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Stępińska, Izabela, Elżbieta Czerwosz, Mirosław Kozłowski, Halina Wronka, and Piotr Dłużewski. "Studies of field emission process influence on changes in CNT films with different CNT superficial density." Materials Science-Poland 36, no. 1 (May 18, 2018): 27–33. http://dx.doi.org/10.1515/msp-2018-0001.

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Abstract Field emission from materials at high electric fields can be associated with unfavorable or even destructive effect on the surface of the investigated cathode. The impact of high voltage electric power supply causes locally very strong electric fields focusing on the cathode surface. It causes a number of phenomena, which can adversely affect the morphology and the structure of the cathode material. Such a phenomenon is, for example, peeling of an emissive layer from the substrate or its burnout. It results in tearing of the layer and a decrease or loss of its ability to electrons emission. The cold cathodes in a form of CNT films with various CNTs superficial distribution are obtained by physical vapor deposition followed by chemical vapor deposition. CNTs are catalyzed in pyrolytic process with xylene (CVD), by Ni in a form of nanograins (few nm in size) placed in carbonaceous matrix. These films are built of emissive CNTs - carbonaceous film deposited on different substrates. In this work, the morphology and topography of superficial changes resulting from external electric field in such films were investigated.
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Wang, M. S., Jan Yong Wang, C. H. Jin, Qing Chen, and Lian Mao Peng. "Observations of Carbon Nanotube Field Emission Failure in the Transmission Electron Microscope." Materials Science Forum 475-479 (January 2005): 4071–76. http://dx.doi.org/10.4028/www.scientific.net/msf.475-479.4071.

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The failure of individual multiwall carbon nanotubes (CNTs) during electron field emission was investigated in situ inside the transmission electron microscope (TEM). Long time emission of a single CNT at the level of tens µA or higher may lead to unrecoverable damage to the CNT. High-resolution TEM observations of the emission failure process shown that the failure was usually companied by structure damage or break of the CNT, and the failure or degradation of the emission characteristics of the CNT was typically initiated at the CNT/substrate contact, defect site or at the open end via the field evaporation or oxidation of the tip of the CNT.
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Fairchild, Steven B., Chelsea E. Amanatides, Thiago A. de Assis, Paul T. Murray, Dmitri Tsentalovich, Jeffrey L. Ellis, Salvador Portillo, et al. "Field emission cathodes made from knitted carbon nanotube fiber fabrics." Journal of Applied Physics 133, no. 9 (March 7, 2023): 094302. http://dx.doi.org/10.1063/5.0123120.

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Field electron emission cathodes were constructed from knitted fabrics comprised entirely of carbon nanotube (CNT) fibers. The fabrics consisted of a top layer array of ∼2 mm high looped structures and a bottom layer that was 1 mm thick with a flat underlying surface. Field emission (FE) experiments were performed on 25.4 mm diameter CNT fabric cathodes in both direct current (DC) and pulsed voltage (PV) modes, and the results were compared to those obtained from a CNT film cathode. The DC measurements were performed at a maximum voltage of 1.5 kV. The CNT fabric cathode emitted 20 mA, which was an 8× increase over the emission current from the CNT film cathode. The DC results were analyzed using the corrected form of the Fowler–Nordheim FE theory initially developed by Murphy and Good, which allows for the determination of the formal emission area and effective gap-field enhancement factor. The PV experiments resulted in Ampere level emission currents from both CNT fabric and CNT film cathodes. For a 25 kV, 500 ns voltage pulse, the CNT fabric cathode emitted 4 A, which was 2× more current than the CNT film cathode. Scanning electron microscopy imaging after PV testing revealed that the fibers remained intact after >5000 pulses. These results indicate that knitted CNT fabrics offer a promising approach for developing large area, conformable, robust FE cathodes for vacuum electronic devices.
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Li, Hui, Xiao Gang Zhou, Chao Yuan, and Gen Sheng Dou. "Experimental Preparation and Properties of Modified CNT Field Emitters for the Field Emission Display Panel." Advanced Materials Research 148-149 (October 2010): 1327–30. http://dx.doi.org/10.4028/www.scientific.net/amr.148-149.1327.

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Carbon nanotube used as the cathode material, the diode-type field emission display panel was developed with low-cost screen-printing method and precise photolithography process. The modified CNT field emitter was fabricated for improving the field emission characteristic, and the detailed fabrication process was also presented. The indium-tin-oxide film on the cathode back-plane was divided to form the CNT cathode electrode, and the insulation slurry was screen-printed to form the insulation layer. Field emission characteristic of whole display device was measured. The sealed field emission display panel showed good emission properties and high display image brightness.
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Wu, Chao, and Xiao Feng Jin. "Optimization Design and Fabrication of Annular Field Emitter for Field Emission Display Panel." Key Engineering Materials 467-469 (February 2011): 1520–23. http://dx.doi.org/10.4028/www.scientific.net/kem.467-469.1520.

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With high-effective screen-printing technique, the diode field emission display (FED) panel with carbon nanotube (CNT) as cathode material was fabricated. For improving the field emission properties, the annular field emitter was developed. The bar cathode indium tin oxide (ITO) electrode was formed by the divided ITO film with the photolithography process. After the sintering process, the printed silver slurry was solidified to form the rectangular ring electrode. The prepared CNT paste was printed to form the cold cathode emitter. Field emission characteristics of sealed FED panel were measured, and the emission image was also presented. A series of low-cost manufacture process was employed in the device fabrication course. The fabricated FED panel exhibited better field emission performance and large emission current.
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Lim, Yu Dian, Liangxing Hu, Xin Xia, Zishan Ali, Shaomeng Wang, Beng Kang Tay, Sheel Aditya, and Jianmin Miao. "Field emission properties of SiO2-wrapped CNT field emitter." Nanotechnology 29, no. 1 (November 29, 2017): 015202. http://dx.doi.org/10.1088/1361-6528/aa96ed.

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Wu, Chao, Wen Sheng Xing, and Yu Kui Li. "Field Emission Characteristics of FED with Carbon Nanotube Field Emitters Using Improved Cathode Electrode." Advanced Materials Research 148-149 (October 2010): 1315–18. http://dx.doi.org/10.4028/www.scientific.net/amr.148-149.1315.

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Silver slurry was used as conducting material, and the improved silver cathode electrode was fabricated. The CNT paste formed as field emitters was screen-printed on the surface of silver cathode electrode. The diode FED panel with CNT field emitters was sealed, and the fabrication of cathode substrate and anode substrate was described. The screen-printing technology and the sintering process were employed in the course of device fabrication for the silver cathode electrode. The field emission current was measured and the emission image was presented. The packaged FED showed good field emission characteristics and better field emission uniformity, which the manufacture process was also low-cost, feasible and simple.
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Dissertations / Theses on the topic "FIELD EMISSION OF CNT"

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Parmee, Richard. "X-ray generation by field emission." Thesis, University of Cambridge, 2018. https://www.repository.cam.ac.uk/handle/1810/284924.

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Since the discovery of X-rays over a century ago the techniques applied to the engineering of X-ray sources have remained relatively unchanged. From the inception of thermionic electron sources, which, due to simplicity of fabrication, remain central to almost all X-ray applications at this time, there have been few fundamental technological advances. The emergence of new materials and manufacturing techniques has created an opportunity to replace the traditional thermionic devices with those that incorporate Field Emission electron sources. One of the most important attributes of Field Emission X-ray sources is their controllability, and in particular the fast response time, which opens the door to applying techniques which have formerly been the preserve of optical systems. The work in this thesis attempts to bridge the gap between the fabrication and optimisation of the vacuum electronic devices and image processing aspects of a new approach to high speed radiographic imaging, particularly with a view to addressing practical real-world problems. Off the back of a specific targeted application, the project has involved the design of a viable field emission X-ray source, together with the development of an understanding of the failure modes in such devices, both by analysis and by simulation. This thesis reviews the capabilities and the requirements of X-ray sources, the methods by which nano-materials may be applied to the design of those devices and the improvements and attributes that can be foreseen. I study the image processing methods that can exploit these attributes, and investigate the performance of X-ray sources based upon electron emitters using carbon nanotubes. Modelling of the field emission and electron trajectories of the cathode assemblies has led me to the design of equipment to evaluate and optimise the parameters of an X-ray tube, which I have used to understand the performance that is achievable. Finally, I draw conclusions from this work and outline the next steps to provide the basis for a commercial solution.
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Christy, Larry A. "Field Emission Properties of Carbon Nanotube Fibers and Sheets for a High Current Electron Source." University of Cincinnati / OhioLINK, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1406819279.

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Navitski, Aliaksandr [Verfasser]. "Scanning field emission investigations of structured CNT and MNW cathodes, niobium surfaces and photocathodes / Aliaksandr Navitski." Wuppertal : Universitätsbibliothek Wuppertal, 2010. http://d-nb.info/1009494678/34.

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Ahmed, Muhammad Shafiq. "Characterization of carbon nanotubes grown by chemical vapour deposition." Thesis, UOIT, 2009. http://hdl.handle.net/10155/26.

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Carbon nanotubes (CNTs), discovered by Ijima in 1991, are one of the allotropes of carbon, and can be described as cylinders of graphene sheet capped by hemifullerenes. CNTs have excellent electrical, mechanical, thermal and optical properties and very small size. Due to their unique properties and small size, CNTs have a great potential for use in electronics, medical applications, field emission devices (displays,scanning and electronprobes/microscopes) and reinforced composites. CNTs can be grown by different methods from a number of carbon sources such as graphite, CO,C2H4, CH4 and camphor. Under certain conditions, a metallic catalyst is used to initiate the growth. The three main methods used to grow CNTs are: Arc-discharge, laser ablation (LA) and chemical vapour deposition (CVD). In the present work CNTs were grown from a mixture of camphor (C10H16O) and ferrocene (C10H10Fe) using Chemical Vapour Deposition (CVD) and argon was used as a carrier gas. The iron particles from ferrocene acted as catalysts for growth. The substrates used for the growth of CNTs were crystalline Si and SiO2 (Quartz) placed in a quartz tube in a horizontal furnace. Several parameters have been found to affect the CNT growth process. The effects of three parameters: growth temperature, carrier gas (Ar) flow rate and catalyst concentration were investigated in the present work in order to optimize the growth conditions with a simple and economical CVD setup. The samples were characterized using electron microscopy (EM), thermogravimetirc analysis (TGA), Raman and FTIR spectroscopy techniques. It was found that the quality and yield of the CNTs were best at 800°C growth temperature, 80sccm flow rate and 4% catalyst concentration.
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French, Paul Jacob. "High-sensitivity field emission magnetometers and other applications of field emission technologies." Thesis, University College London (University of London), 2008. http://discovery.ucl.ac.uk/1443981/.

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The feasibility and development of a field emission based anisotropic vector magnetometer is presented. Within this scope current magnetic sensing technology is investigated and compared. The advantages of, and need for, a field emission based magnetic sensor are then discussed. Background theory, simulation, fabrication, testing, and future developments of field emission magnetometers are presented. The possible applications of field emission to other technologies are also investigated. The magnetic sensing device presented uses a sharp field emitting tip with a radius of the order of 100nm which is fabricated using standard silicon processing techniques on highly n-doped silicon. Under a vacuum level of 10"6 mBar and at room temperature, a potential applied to a surrounding gate electrode extracts from this tip a beam of electrons which is incident upon two separate anode electrodes. In the absence of an external magnetic field the electron current incident on each of these two electrodes is equal, while in the presence of a magnetic field the Lorenz force skews the beam towards one of the electrodes, resulting in a differential current which is proportional to the magnetic field.
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Hong, Ching-yin 1973. "Intelligent field emission arrays." Thesis, Massachusetts Institute of Technology, 2003. http://hdl.handle.net/1721.1/17037.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2003.
Includes bibliographical references (p. 289-301).
This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Field emission arrays (FEAs) have been studied extensively as potential electron sources for a number of vacuum microelectronic device applications. For most applications, temporal current stability and spatial current uniformity are major concerns. Using the kinetic model of electron emission, field emission can be described as two sequential processes- the flux of electrons to the tip surface followed by the transmission of the electrons through the surface barrier. Either of these processes could be the determinant of the emission current. Unstable emission current is usually due to absorption/desorption of gas molecules on the tip surface (barrier height variation) and non-uniform emission is usually due to tip radius variation (barrier width change). These problems could be solved if the emission current is determined by the electron supply to the surface instead of the electron transmission through the surface barrier. In this thesis, we used the inversion layer of a MOSFET to control the electron supply. It results in additional benefits of low turn-on voltage and low voltage swing to turn the device on and off. A novel CMP-based process for fabricating integrated LD-MOSFET/FEA is presented. We obtained FEA devices with an extraction gate aperture of 1.3 [mu]m and emitter height of 1 [mu]m. We present a comprehensive study of field emitter arrays with or without MOSFET. The silicon field emitter shows turn-on voltage of [approximately]24 V with field enhancement factor (b[sub]FN) of [approximately]370. We demonstrated that the LD-MOSFET provides excellent control of emission current. The threshold voltage of the LD-MOSFET is [approximately]0.5V. The integrated device can be switched ON and OFF using a MOSFET gate voltage swing of 0.5V. This results in an ON/OFF current ratio of 1000:1. The current fluctuation is significantly reduced when the MOSFET is integrated with the FEA device and the device is operated in the MOSFET control regime. The emission current of the integrated LD-MOSFET/FEA remains stable regardless the gas and vacuum condition. The saturation current level of the integrated devices in the MOSFET controlled region is also the same regardless the emitter array size or the FEA's position on the wafer. We also present a comprehensive study of three-dimensional oxidation in silicon emitter tip
(cont.) formation. Stress plays an important role in the oxidation mechanism. A new sharp emitter tip formation mechanism is proposed: rather than a continuous oxidation process, an emitter neck breaking stage occurs before the sharp emitter tip is formed. Stress from volume difference of silicon and silicon dioxide is the main cause for the emitter neck breaking. Initial formation of microcracks around the neck occurs at high temperature due to volume difference stress, oxide grows into the cracks right after crack formation, and a sharp emitter tip is then formed by further oxidation.
by Ching-yin Hong.
Ph.D.
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Ding, Meng 1972. "Field emission from silicon." Thesis, Massachusetts Institute of Technology, 2001. http://hdl.handle.net/1721.1/8645.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Physics, 2001.
Includes bibliographical references (p. 259-275).
A field emitter serves as a cold source of electrons. It has practical applications in various fields such as field emission flat panel displays, multiple electron-beam lithography, ion propulsion/micro-thrusters, radio frequency source, information storage technology, and electronic cooling. Silicon is an attractive material for building electron field emitters. To understand the physics of electron field emission from silicon and to push technologies of making quality field emitter arrays present both opportunities and challenges. This work focuses on an experimental study of electron field emission phenomena from silicon field emitter arrays. We demonstrate electron field emission from both the conduction band and the valence band of silicon simultaneously. A two-band field emission model is presented to explain the experimental data. Theoretical predictions for valence band emission were made in the past; however there was no direct observation until now. Experimental evidence of current saturation in field emission existed in the literature. We also report the observation of current saturation in n-type silicon field emitter arrays. A simple model is presented to account for the results. We report successfully fabricating 1/,m gate-aperture silicon field emitter arrays with a turn-on voltage as low as 14 V. The gate leakage current is observed to be less than 0.01% of the total emission current. Devices show excellent emission uniformity for different sized arrays. The low turn-on voltage is attributed to the small emitter tip radius. It was achieved by isotropic etching of silicon and low temperature oxidation sharpening of the emitter tips.
(cont.) Field emitters with a tip radius of about 10nm can be routinely obtained. Optimization of the oxidation sharpening process further reduced the tip radius to be around lnm. The results were confirmed by Transmission Electron Microscopy (TEM). Device characterization showed agreement with Fowler-Nordheim theory. Analytical and numerical models were introduced to account for the experimental results. We also demonstrate the successful fabrication of the high aspect ratio silicon tip field emitter arrays. Silicon emitters as high as 5-6[mu]m with an aspect ratio larger than 10:1 was achieved in our facilities. Furthermore we have also successfully fabricated and tested the fully gated high aspect ratio field emitter arrays. The experimental current-voltage data agree well with the Fowler-Nordheim theory. A Maxwell Stress Microscope, which is capable of imaging sample topography and the surface potential simultaneously is set up and tested for the purpose of further study of the properties of the surfaces of the silicon field emitters.
by Meng Ding.
Ph.D.
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Poa, Chun Hwa Patrick. "Electron field emission from carbons and their emission mechanism." Thesis, University of Surrey, 2002. http://epubs.surrey.ac.uk/842670/.

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This thesis is concerned with the research of the electron field emission properties of carbon based materials. Low emission threshold fields have been observed from both amorphous carbon thin films and carbon nanotubes. The emission mechanism can be subdivided into two groups depending on the type of electric field enhancement. These are the amorphous carbon flat films with non-geometric field enhancement and carbon nanotubes with high surface geometric field enhancement. Amorphous carbon thin films are deposited using an rf-plasma enhanced chemical vapour deposition technique. Changing the deposition conditions such as the addition of Argon or Nitrogen modifies the electronic properties. This induces variations in the sp2 concentration and its distribution within the films. The electron field emission properties from amorphous carbon thin films show a close relationship to its sp2 configuration. A model based on non-geometric field enhancement is proposed to explain the variation in the field emission characteristics. Nano-structured amorphous carbon films custom "designed" using ion beam assisted deposition with sp2 cluster sizes of around 60 nm have also been investigated. The field emission threshold field was shown to be controlled by the film's intrinsic stress and the local carbon density. With increasing stress, there is a concomitant increase in the local density, which is postulated to decrease the distance between the carbon graphitic "planes". This results in enhancement of the electron emission at lower fields. Stress within the films also induces changes to the band structure of the nano-structured carbon which are beneficial to the field emission process. Field emission from carbon nanotubes that are embedded in a polymer matrix has been investigated. The emission threshold fields are observed to be dependent on the nanotube density. The effect of electric field screening is used to explain the reduction of field enhancement observed in these films with increasing nanotube density. The field emission properties are compared with those films which have vertically aligned and in e-beam fabricated nanotube arrays. Results indicate that field emission properties from non-aligned nanotube films are comparable in performance to the best designed arrays in the literature. Although this study shows carbon based materials to have superior field emission properties, integrating the cathodes to fabricate commercial devices could prove to be very challenging.
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Laou, Philips. "Field emission devices on silicon." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape11/PQDD_0001/NQ44486.pdf.

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Boswell, Emily. "Field emission from porous silicon." Thesis, University of Oxford, 1997. http://ora.ox.ac.uk/objects/uuid:a4344196-7fc2-4713-b47b-85920b137759.

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Vacuum microelectronic (VME) devices are of interest for the development of flat-screen displays and microwave devices. In many cases, their operation depends on the field emission of electrons from micron-sized cathodes (semiconductor or metal), into a vacuum. Major challenges to be met before these devices can be fully exploited include obtaining - low operating voltages, high maximum emission currents, uniform emission characteristics, and long-term emission stability. The research in this thesis concerns the production of silicon field emitters and the improvement of their emission properties by the process of anodisation. Anodisation was carried out for short times, in order to form a very thin layer of porous silicon (PS) at the surface of both p and p+-type silicon emitters. The aim in doing this was to form a high density of asperities over the surface of the emitters. It was the intention that these asperities, rather than the "macroscopic" apex of the emitter, would control emission. This was the first work of its kind to be carried out. Transmission electron microscopy was used to characterise the morphology of p and p+-type silicon emitters before and after anodisation. Both the structure and arrangement of the surface fibrils, the thickness of the PS layers at the apex and nature of PS cross-sections were studied. The morphology was correlated to subsequent field emission measurements. Field emission characteristics, before and after anodisation, were obtained using a scanning electron microscope adapted for field emission measurements, and a field emission microscope. Extensive measurements showed that, following anodisation, there was substantial improvement in emission behaviour. After anodisation, the following was found to be true: i) The starting voltage was reduced by up to 50% (with p+
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Books on the topic "FIELD EMISSION OF CNT"

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Egorov, Nikolay, and Evgeny Sheshin. Field Emission Electronics. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-56561-3.

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Gomer, Robert. Field emission and field ionization. New York: American Institute of Physics, 1993.

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Gomer, R. Field emission and field ionization. New York: American Institute of Physics, 1993.

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Bhattacharya, Sitangshu, and Kamakhya Prasad Ghatak. Fowler-Nordheim Field Emission. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-20493-7.

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Mesi︠a︡t︠s︡, G. A. Explosive electron emission. Ekaterinburg: URO-Press, 1998.

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Brodusch, Nicolas, Hendrix Demers, and Raynald Gauvin. Field Emission Scanning Electron Microscopy. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-4433-5.

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Brodie, Ivor, and Paul Schwoebel, eds. Field Emission in Vacuum Microelectronics. Boston, MA: Springer US, 2005. http://dx.doi.org/10.1007/b139052.

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Field emission in vacuum microelectronics. New York: Kluwer Academic/Plenum Publishers, 2003.

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Fursey, George. Field emission in vacuum microelectronics. New York, NY: Kluwer Academic/Plenum Publishers, 2004.

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Fleck, Roland A., and Bruno M. Humbel. Biological Field Emission Scanning Electron Microscopy. Chichester, UK: John Wiley & Sons, Ltd, 2019. http://dx.doi.org/10.1002/9781118663233.

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Book chapters on the topic "FIELD EMISSION OF CNT"

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Ohkawa, Yasushi. "CNT Field-Emission Cathode for Space Applications." In Nanostructured Carbon Electron Emitters and Their Applications, 315–30. New York: Jenny Stanford Publishing, 2021. http://dx.doi.org/10.1201/9781003141990-15.

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Glauvitz, Nathan E., Ronald A. Coutu, Peter J. Collins, and LaVern A. Starman. "Etching Silicon Dioxide for CNT Field Emission Device." In MEMS and Nanotechnology, Volume 6, 93–99. New York, NY: Springer New York, 2012. http://dx.doi.org/10.1007/978-1-4614-4436-7_14.

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Saito, Yahachi. "Emission of C+20 by Field Evaporation from CNT." In Nanostructured Carbon Electron Emitters and Their Applications, 343–50. New York: Jenny Stanford Publishing, 2021. http://dx.doi.org/10.1201/9781003141990-17.

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Sinha, N., D. Roy Mahapatra, R. V. N. Melnik, and J. T. W. Yeow. "Computational Implementation of a New Multiphysics Model for Field Emission from CNT Thin Films." In Computational Science – ICCS 2008, 197–206. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-69387-1_22.

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Asaka, Koji, and Yahachi Saito. "Growth of Long Linear Carbon Chains after Serious Field Emission from a CNT Film." In Nanostructured Carbon Electron Emitters and Their Applications, 331–42. New York: Jenny Stanford Publishing, 2021. http://dx.doi.org/10.1201/9781003141990-16.

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Hiramatsu, Mineo, and Masaru Hori. "Field Emission." In Carbon Nanowalls, 117–29. Vienna: Springer Vienna, 2010. http://dx.doi.org/10.1007/978-3-211-99718-5_6.

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Saito, Yahachi. "Preparation of CNT Emitters." In Carbon Nanotube and Related Field Emitters, 15–21. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2010. http://dx.doi.org/10.1002/9783527630615.ch2.

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Tonegawa, Takeshi, Masateru Taniguchi, and Shigeo Itoh. "Transparent-Like CNT-FED." In Carbon Nanotube and Related Field Emitters, 333–41. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2010. http://dx.doi.org/10.1002/9783527630615.ch21.

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Nakayama, Yoshikazu. "Surface Coating of CNT Emitters." In Carbon Nanotube and Related Field Emitters, 163–75. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2010. http://dx.doi.org/10.1002/9783527630615.ch12.

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Mann, Mark, William Ireland Milne, and Kenneth Boh Khin Teo. "Preparation of Patterned CNT Emitters." In Carbon Nanotube and Related Field Emitters, 23–40. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2010. http://dx.doi.org/10.1002/9783527630615.ch3.

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Conference papers on the topic "FIELD EMISSION OF CNT"

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Anand, Sandeep V., D. Roy Mahapatra, Niraj Sinha, J. T. W. Yeow, and R. V. N. Melnik. "Field Emission Efficiency of a Carbon Nanotube Array Under Parasitic Nonlinearities." In ASME 2010 International Mechanical Engineering Congress and Exposition. ASMEDC, 2010. http://dx.doi.org/10.1115/imece2010-39558.

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Carbon Nanotubes (CNTs) grown on substrates are potential electron sources in field emission applications. Several studies have reported the use of CNTs in field emission devices, including field emission displays, X-ray tube, electron microscopes, cathode-ray lamps, etc. Also, in recent years, conventional cold field emission cathodes have been realized in micro-fabricated arrays for medical X-ray imaging. CNT-based field emission cathode devices have potential applications in a variety of industrial and medical applications, including cancer treatment. Field emission performance of a single isolated CNT is found to be remarkable, but the situation becomes complex when an array of CNTs is used. At the same time, use of arrays of CNTs is practical and economical. Indeed, such arrays on cathode substrates can be grown easily and their collective dynamics can be utilized in a statistical sense such that the average emission intensity is high enough and the collective dynamics lead to longer emission life. The authors in their previous publications had proposed a novel approach to obtain stabilized field emission current from a stacked CNT array of pointed height distribution. A mesoscopic modeling technique was employed, which took into account electro-mechanical forces in the CNTs, as well as transport of conduction electron coupled with electron–phonon induced heat generation from the CNT tips. The reported analysis of pointed arrangements of the array showed that the current density distribution was greatly localized in the middle of the array, the scatter due to electrodynamic force field was minimized, and the temperature transients were much smaller compared to those in an array with random height distribution. In the present paper we develop a method to compute the emission efficiency of the CNT array in terms of the amount of electrons hitting the anode surface using trajectory calculations. Effects of secondary electron emission and parasitic capacitive nonlinearity on the current-voltage signals are accounted. Field emission efficiency of a stacked CNT array with various pointed height distributions are compared to that of arrays with random and uniform height distributions. Effect of this parasitic nonlinearity on the emission switch-on voltage is estimated by model based simulation and Monte Carlo method.
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Calderón-Colón, Xiomara, and Otto Zhou. "Development of Carbon Nanotube Field Emitters for X-Ray Source." In ASME 2007 Summer Bioengineering Conference. American Society of Mechanical Engineers, 2007. http://dx.doi.org/10.1115/sbc2007-175998.

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Carbon Nanotubes (CNTs) have been shown excellent field emission emitters due to their unique properties. CNTs are a stable form of carbon; a graphite sheet rolls up forming a cylindrical shape with high aspect ratio, low turn-on field, high current density, high strength (1) and can generate quality x-ray radiation (2). These properties make carbon nanotubes very attractive for field emission applications. Field emission cathodes are the central part of field emission displays (FED) and carbon nanotubes field emission x-ray source. FED is a new flat panel display technology; this technology enables much thinner, lighter, and highest resolution displays than the cathode ray tubes (CRT). CNTs field emission x-ray source technology has applications in medical imaging and homeland security (2–7). The current thermionic cathodes have several disadvantages over CNT based field emission x-ray source such as slow response time, high power consumption, high operation temperature that reduces the lifetime of the x-ray tube (4) and large device size (3). Also CNT based field emission x-ray source offers improvement in high temporal resolution and capabilities for spatial and temporal modulation (7). CNT field emission x-ray source technology is available in single- and multi-beam imaging system. Multi-beam imaging system offers image of an object from multiple projection angles without mechanical motion (7).
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Lim, Yu Dian, Alexander Avramchuck, Dmitry Grapov, Beng Kang Tay, Sheel Aditya, and Vladimir Labunov. "Field emission characteristics of short CNT bundles." In 2016 IEEE International Vacuum Electronics Conference (IVEC). IEEE, 2016. http://dx.doi.org/10.1109/ivec.2016.7561783.

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Jian Zhang, Yangyang Zhao, Yongjun Cheng, Detian Li, and Changkun Dong. "CNT field emission based ultra-high vacuum measurements." In 2015 28th International Vacuum Nanoelectronics Conference (IVNC). IEEE, 2015. http://dx.doi.org/10.1109/ivnc.2015.7225574.

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Lu, Wenhui, Hang Song, Haifeng Zhao, Hui zhao, Zhiming Li, Hong Jiang, Guoqing Mao, and Yixin Jin. "Experiment Study on Planar-Gate Electron Source with CNT." In 2006 19th International Vacuum Nanoelectronics Conference and 50th International Field Emission Symposium. IEEE, 2006. http://dx.doi.org/10.1109/ivnc.2006.335375.

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Han, Jun Soo, Sang Heon Lee, Han Bin Go, Cheol Jin Lee, and Yoon-Ho Song. "Field emission characteristics of CNT film emitters according to emission tip shapes." In 2018 31st International Vacuum Nanoelectronics Conference (IVNC). IEEE, 2018. http://dx.doi.org/10.1109/ivnc.2018.8520061.

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Yang, Zhan, Masahiro Nakajima, Yajing Shen, Pengbo Wang, Changhai Ru, Yahua Zhang, Lining Sun, and Toshio Fukuda. "Test of A CNT gyroscope based on field emission." In 2013 IEEE 7th International Conference on Nano/Molecular Medicine and Engnieering (NANOMED). IEEE, 2013. http://dx.doi.org/10.1109/nanomed.2013.6766316.

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Stępińska, Izabela, Halina Wronka, Stanisław Waszuk, Joanna Radomska, Mirosław Kozłowski, Elżbieta Czerwosz, and Florea Craciunoiu. "Field emission from CNT films deposited on porous Si." In XXXVI Symposium on Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments (Wilga 2015), edited by Ryszard S. Romaniuk. SPIE, 2015. http://dx.doi.org/10.1117/12.2205844.

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Liu, Weihua, and Changchun Zhu. "Field Emission Aging Characteristic of Screen Printed CNT Cathode." In 2006 19th International Vacuum Nanoelectronics Conference. IEEE, 2006. http://dx.doi.org/10.1109/ivnc.2006.335480.

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Han, Jun Soo, Ki Nam Yun, Sang Heon Lee, Han Bin Go, Cheol Jin Lee, and Yoon-Ho Song. "Field emission properties of triode structure CNT film emitter." In 2017 30th International Vacuum Nanoelectronics Conference (IVNC). IEEE, 2017. http://dx.doi.org/10.1109/ivnc.2017.8051593.

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Reports on the topic "FIELD EMISSION OF CNT"

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Piestrup, Melvin A., Harold E. Puthoff, and Paul J. Ebert. Enhanced correlated-Charge Field Emission. Fort Belvoir, VA: Defense Technical Information Center, February 1998. http://dx.doi.org/10.21236/ada337858.

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Boyd, J. K., and V. K. Neil. Electron beam brightness with field immersed emission. Office of Scientific and Technical Information (OSTI), December 1985. http://dx.doi.org/10.2172/6369432.

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Lee, Bo. A knife-edge array field emission cathode. Office of Scientific and Technical Information (OSTI), August 1994. http://dx.doi.org/10.2172/515571.

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Rinzler, A. G., J. H. Hafner, P. Nilolaev, D. T. Colbert, and R. E. Smalley. Field emission and growth of fullerene nanotubes. Office of Scientific and Technical Information (OSTI), November 1994. http://dx.doi.org/10.2172/650265.

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Ang, Lay-Kee. Modeling of Electron Field Emission from Graphene. Fort Belvoir, VA: Defense Technical Information Center, December 2011. http://dx.doi.org/10.21236/ada552737.

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Thangaraj, Charles. Gated Field-Emission Cathode Radio-Frequency (RF) Gun. Office of Scientific and Technical Information (OSTI), November 2016. http://dx.doi.org/10.2172/1433861.

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Ohlinger, Wayne L., and D. N. Hill. Field Emission Cathode and Vacuum Microelectronic Microwave Amplifier Development. Fort Belvoir, VA: Defense Technical Information Center, March 1992. http://dx.doi.org/10.21236/ada253846.

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Ohlinger, Wayne L., and D. N. Hill. Field Emission Cathode and Vacuum Microelectronic Microwave Amplifier Development. Fort Belvoir, VA: Defense Technical Information Center, March 1992. http://dx.doi.org/10.21236/ada253847.

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Jay L. Hirshfield. Rf Gun with High-Current Density Field Emission Cathode. Office of Scientific and Technical Information (OSTI), December 2005. http://dx.doi.org/10.2172/861455.

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Bussmann, Ezra, Taisuke Ohta, Barbara Kazanowska, George Wang, and Rajan Tandon. Stronger field-emission science via coupling novel nanoscale imaging techniques. Office of Scientific and Technical Information (OSTI), September 2020. http://dx.doi.org/10.2172/1670519.

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