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Journal articles on the topic 'Field effect'

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Author: Grafiati

Published: 4 June 2021

Last updated: 25 May 2024

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1

Vasilev, Dragomir. "BIOLOGICAL EFFECT OF THE ELECTROMAGNETIC FIELD." Journal Scientific and Applied Research 21, no. 1 (November 15, 2021): 64–69. http://dx.doi.org/10.46687/jsar.v21i1.321.

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In this paper presents biological effect of the Electromagnetic field. The human body consists of cells, tissues, organs with different electrical characteristics. When an electric current flows through the human body, cells and tissues prevent the movement of charged particles. The value of the resistance depends on the type and condition of the cells, the value and frequency of the applied voltage and the duration.

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2

Saragi, Tobat P. I., and Thomas Reichert. "Magnetic-field effects in illuminated tetracene field-effect transistors." Applied Physics Letters 100, no. 7 (February 13, 2012): 073304. http://dx.doi.org/10.1063/1.3684835.

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3

Seton-Rogers, Sarah. "Field effect." Nature Reviews Cancer 12, no. 8 (July 5, 2012): 508–9. http://dx.doi.org/10.1038/nrc3324.

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4

Lee, Ho-Shik, Yong-Pil Park, and Min-Woo Cheon. "Electrical Properties of CuPc Field-effect Transistor with Different Electrodes." Journal of the Korean Institute of Electrical and Electronic Material Engineers 21, no. 10 (October 1, 2008): 930–33. http://dx.doi.org/10.4313/jkem.2008.21.10.930.

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5

Prakash, Shaurya, and A. T. Conlisk. "Field effect nanofluidics." Lab on a Chip 16, no. 20 (2016): 3855–65. http://dx.doi.org/10.1039/c6lc00688d.

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6

Ghowsi, Kiumars, and Robert J. Gale. "Field effect electroosmosis." Journal of Chromatography A 559, no. 1-2 (October 1991): 95–101. http://dx.doi.org/10.1016/0021-9673(91)80061-k.

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7

Bondar, E. A., and D. A. Luzhbin. "Effect of Magnetic Field on Electrodeposition of Nanosize Structures." METALLOFIZIKA I NOVEISHIE TEKHNOLOGII 40, no. 5 (September 11, 2018): 615–23. http://dx.doi.org/10.15407/mfint.40.05.0615.

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8

Niu, Zhi Ping. "Thermoelectric effects in spin field-effect transistors." Physics Letters A 375, no. 36 (August 2011): 3218–22. http://dx.doi.org/10.1016/j.physleta.2011.07.018.

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9

Tsap, B. "Silicon carbide microwave field-effect transistor: Effect of field dependent mobility." Solid-State Electronics 38, no. 6 (June 1995): 1215–19. http://dx.doi.org/10.1016/0038-1101(94)00219-6.

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10

Pradhan, Nihar R., Daniel Rhodes, Yan Xin, Shahriar Memaran, Lakshmi Bhaskaran, Muhandis Siddiq, Stephen Hill, Pulickel M. Ajayan, and Luis Balicas. "Ambipolar Molybdenum Diselenide Field-Effect Transistors: Field-Effect and Hall Mobilities." ACS Nano 8, no. 8 (July 14, 2014): 7923–29. http://dx.doi.org/10.1021/nn501693d.

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11

Palma, John, and Samson Mil’shtein. "Field effect controlled lateral field emission triode." Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 29, no. 2 (March 2011): 02B111. http://dx.doi.org/10.1116/1.3554216.

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12

Xu, Yifan, and Paul R. Berger. "High electric-field effects on short-channel polythiophene polymer field-effect transistors." Journal of Applied Physics 95, no. 3 (February 2004): 1497–501. http://dx.doi.org/10.1063/1.1636830.

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13

Belyaev, M. A., A. A. Velichko, P. P. Boriskov, N. A. Kuldin, V. V. Putrolaynen, and G. B. Stefanovitch. "The Field Effect and Mott Transistor Based on Vanadium Dioxide." Journal on Selected Topics in Nano Electronics and Computing 1, no. 2 (June 2014): 26–30. http://dx.doi.org/10.15393/j8.art.2014.3045.

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14

GOEL, GOURAV, and S. N. SACHDEVA. "Effect of Varying Field Conditions on Stripping of Bituminous Roads." INTERNATIONAL JOURNAL OF EARTH SCIENCES AND ENGINEERING 10, no. 02 (April 26, 2017): 404–7. http://dx.doi.org/10.21276/ijee.2017.10.0240.

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15

Mariotti, M., A. Masoni, L. Ercoli, and I. Arduini. "Nitrogen leaching and residual effect of barley/field bean intercropping." Plant, Soil and Environment 61, No. 2 (June 6, 2016): 60–65. http://dx.doi.org/10.17221/832/2014-pse.

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16

Lukiyanets, B., and D. Matulka. "Effect of magnetic field on quantum capacitance of the nanoobject." Mathematical Modeling and Computing 2, no. 2 (December 31, 2015): 176–82. http://dx.doi.org/10.23939/mmc2015.02.176.

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17

Boudinov, Henry, and Gabriel Volkweis Leite. "Organic Field Effect Transistors." Journal of Integrated Circuits and Systems 17, no. 2 (September 17, 2022): 1–12. http://dx.doi.org/10.29292/jics.v17i2.615.

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This article begins with a brief overview of the structure, physical characteristics, and peculiarities of organic field effect transistors. The main differences from the silicon MOSFET are emphasized. The results of poly 3-hexylthiophene and cross-linked polyvinyl alcohol top gate-bottom contact transistors with different channel lengths fabricated by standard photolithography and plasma etching are described. Transistors showed good charge mobility, high ION/IOFF and excellent environmental stability. The Shockley model and the Transmission Line Method (TLM) were applied to characterize the transistors. Mobility was extracted by both methods and differences were discussed. The shorter the channel length and the higher the conductivity of the semiconductor, the greater the impact of contact resistance. In these cases, the use of TLM for parameters extraction becomes essential. The transistors were submitted to extended current-voltage measurements and drain current degradation was observed. Drain current as a function of the integral charge passing through the channel was investigated. The strong decrease in current was found to be related to reduced mobility of charge carriers. Reasons for this behavior are suggested.

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18

Tabib-Azar, Massood, and Pradeep Pai. "Microplasma Field Effect Transistors." Micromachines 8, no. 4 (April 5, 2017): 117. http://dx.doi.org/10.3390/mi8040117.

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19

Adinolfi, Valerio, and Edward H. Sargent. "Photovoltage field-effect transistors." Nature 542, no. 7641 (February 8, 2017): 324–27. http://dx.doi.org/10.1038/nature21050.

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20

Aslam, Kashif, Syed Gilani, Amnah Andarabi, Elise Schriver, and Paul Branca. "Field Effect of Cancer." Chest 144, no. 4 (October 2013): 606A. http://dx.doi.org/10.1378/chest.1704923.

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21

Cartwright, Steven. "Near-field Lau effect." Applied Optics 27, no. 11 (June 1, 1988): 2100. http://dx.doi.org/10.1364/ao.27.002100.

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22

Echtermeyer, T. J., M. C. Lemme, J. Bolten, M. Baus, M. Ramsteiner, and H. Kurz. "Graphene field-effect devices." European Physical Journal Special Topics 148, no. 1 (September 2007): 19–26. http://dx.doi.org/10.1140/epjst/e2007-00222-8.

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23

Reddy, Dharmendar, Leonard F. Register, Gary D. Carpenter, and Sanjay K. Banerjee. "Graphene field-effect transistors." Journal of Physics D: Applied Physics 44, no. 31 (July 14, 2011): 313001. http://dx.doi.org/10.1088/0022-3727/44/31/313001.

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24

Reddy, Dharmendar, Leonard F. Register, Gary D. Carpenter, and Sanjay K. Banerjee. "Graphene field-effect transistors." Journal of Physics D: Applied Physics 45, no. 1 (December 9, 2011): 019501. http://dx.doi.org/10.1088/0022-3727/45/1/019501.

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25

Wernersson, Lars-Erik, Erik Lind, Lars Samuelson, Truls Löwgren, and Jonas Ohlsson. "Nanowire Field-Effect Transistor." Japanese Journal of Applied Physics 46, no. 4B (April 24, 2007): 2629–31. http://dx.doi.org/10.1143/jjap.46.2629.

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26

Sandomirsky, V., A. V. Butenko, R. Levin, and Y. Schlesinger. "Electric-field-effect thermoelectrics." Journal of Applied Physics 90, no. 5 (September 2001): 2370–79. http://dx.doi.org/10.1063/1.1389074.

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27

Dreifus, D. L., B. P. Sneed, J. Ren, J. W. Cook, J. F. Schetzina, and R. M. Kolbas. "ZnSe field‐effect transistors." Applied Physics Letters 57, no. 16 (October 15, 1990): 1663–65. http://dx.doi.org/10.1063/1.104079.

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28

Xie, Y. H. "SiGe field effect transistors." Materials Science and Engineering: R: Reports 25, no. 3 (May 1999): 89–121. http://dx.doi.org/10.1016/s0927-796x(99)00002-9.

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29

Pfleiderer, Hans, and Wilhelm Kusian. "Ambipolar field-effect transistor." Solid-State Electronics 29, no. 3 (March 1986): 317–19. http://dx.doi.org/10.1016/0038-1101(86)90210-8.

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30

Levy, A., J. P. Falck, M. A. Kastner, R. J. Birgeneau, and A. T. Fiory. "Field-effect conductance ofLa2CuO4." Physical Review B 51, no. 1 (January 1, 1995): 648–51. http://dx.doi.org/10.1103/physrevb.51.648.

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31

Ayasli, Y. "Field effect transistor circulators." IEEE Transactions on Magnetics 25, no. 5 (1989): 3242–47. http://dx.doi.org/10.1109/20.42266.

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32

Horowitz, Gilles. "Organic Field-Effect Transistors." Advanced Materials 10, no. 5 (March 1998): 365–77. http://dx.doi.org/10.1002/(sici)1521-4095(199803)10:5<365::aid-adma365>3.0.co;2-u.

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33

Di Bartolomeo, Antonio. "Advanced Field-Effect Sensors." Sensors 23, no. 9 (May 8, 2023): 4554. http://dx.doi.org/10.3390/s23094554.

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Sensors based on the field-effect principle have been used for more than fifty years in a variety of applications ranging from bio-chemical sensing to radiation detection or environmental parameter monitoring [...]

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34

Whall, Terrence E., and Evan H. C. Parker. "SiGe field effect transistors." Journal of Telecommunications and Information Technology, no. 1 (March 30, 2001): 3–12. http://dx.doi.org/10.26636/jtit.2001.1.49.

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Recent and encouraging developments in Schot- tky and MOS gated Si/SiGe field effect transistors are sur- veyed. Circuit applications are now beginning to be investi- gated. The authors discuss some of this work and consider future prospects for the role of SiGe field effect devices in mobile communications.

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35

Caliskan, S., and M. Kumru. "The effect of magnetic field on a nonballistic spin field effect transistor." Journal of Physics: Condensed Matter 19, no. 7 (February 2, 2007): 076205. http://dx.doi.org/10.1088/0953-8984/19/7/076205.

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36

Ohshima, Yuki, Hideki Kohn, Takaaki Manaka, and Mitsumasa Iwamoto. "Space charge field effect on light emitting from tetracene field-effect transistor under AC electric field." Thin Solid Films 518, no. 2 (November 2009): 583–87. http://dx.doi.org/10.1016/j.tsf.2009.07.022.

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37

Koo, Hyun Cheol, Jonghwa Eom, Joonyeon Chang, and Suk-Hee Han. "A spin field effect transistor using stray magnetic fields." Solid-State Electronics 53, no. 9 (September 2009): 1016–19. http://dx.doi.org/10.1016/j.sse.2009.06.006.

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38

Ohkuma, Yasunori, Tsutomu Takahashi, Kiyomitsu Suzuki, and Yasuyuki Nogi. "Effect of Multipole Fields on Field-Reversed-Configuration Plasma." Journal of the Physical Society of Japan 63, no. 8 (August 15, 1994): 2845–48. http://dx.doi.org/10.1143/jpsj.63.2845.

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39

Chaney, Alexander, Henryk Turski, Kazuki Nomoto, Zongyang Hu, Jimy Encomendero, Sergei Rouvimov, Tatyana Orlova, et al. "Gallium nitride tunneling field-effect transistors exploiting polarization fields." Applied Physics Letters 116, no. 7 (February 18, 2020): 073502. http://dx.doi.org/10.1063/1.5132329.

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40

Grillo, Alessandro, Aniello Pelella, Enver Faella, Filippo Giubileo, Stephan Sleziona, Osamah Kharsah, Marika Schleberger, and Antonio Di Bartolomeo. "Memory effects in black phosphorus field effect transistors." 2D Materials 9, no. 1 (December 17, 2021): 015028. http://dx.doi.org/10.1088/2053-1583/ac3f45.

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Abstract We report the fabrication and the electrical characterization of back-gated field effect transistors with a black phosphorus (BP) channel. We show that the hysteresis of the transfer characteristic, due to intrinsic defects, can be exploited to realize non-volatile memories. We demonstrate that gate voltage pulses allow to trap and store charge inside the defect states, which enable memory devices with endurance over 200 cycles and retention longer than 30 min. We show that the use of a protective poly(methyl methacrylate) layer, positioned on top of the BP channel, does not affect the electrical properties of the device but avoids the degradation caused by the exposure to air.

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41

Hu, Zhaoying, Dhiraj Prasad Sinha, Ji Ung Lee, and Michael Liehr. "Substrate dielectric effects on graphene field effect transistors." Journal of Applied Physics 115, no. 19 (May 21, 2014): 194507. http://dx.doi.org/10.1063/1.4879236.

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42

Yue-E, Xie, Yan Xiao-Hong, and Chen Yuan-Ping. "Nonideal effects in quantum field-effect directional coupler." Chinese Physics 15, no. 10 (September 21, 2006): 2415–21. http://dx.doi.org/10.1088/1009-1963/15/10/038.

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43

Artaki, Michael, and Peter J. Price. "Hot phonon effects in silicon field‐effect transistors." Journal of Applied Physics 65, no. 3 (February 1989): 1317–20. http://dx.doi.org/10.1063/1.343027.

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44

Voronin, K. V., G. A. Ermolaev, Y. V. Stebunov, A. V. Arsenin, A. N. Bylinkin, B. B. E. Jensen, B. Jørgensen, and V. S. Volkov. "Substrate effects in graphene field-effect transistor photodetectors." Journal of Physics: Conference Series 1461 (March 2020): 012188. http://dx.doi.org/10.1088/1742-6596/1461/1/012188.

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45

Ren, F., J. R. Lothian, J. D. Mackenzie, C. R. Abernathy, C. B. Vartuli, S. J. Pearton, and R. G. Wilson. "Plasma damage effects in InAlN field effect transistors." Solid-State Electronics 39, no. 12 (December 1996): 1747–52. http://dx.doi.org/10.1016/s0038-1101(96)00092-5.

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46

Singhal, A., A. Mishra, and P. Chakrabarti. "Optical effects in modulation-doped-field-effect-transistor." Solid-State Electronics 33, no. 9 (September 1990): 1214–16. http://dx.doi.org/10.1016/0038-1101(90)90103-l.

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47

Luo, Jun-Wei, Shu-Shen Li, Jian-Bai Xia, and Lin-Wang Wang. "Quantum mechanical effects in nanometer field effect transistors." Applied Physics Letters 90, no. 14 (April 2, 2007): 143108. http://dx.doi.org/10.1063/1.2719151.

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48

Klein, Manfred. "Time effects of ion-sensitive field-effect transistors." Sensors and Actuators 17, no. 1-2 (May 1989): 203–8. http://dx.doi.org/10.1016/0250-6874(89)80081-2.

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49

Adeishvili, Teimuraz. "THE EFFECT OF RADON AND GEOMAGNETIC FIELD ON BIO-SYSTEMS." Journal Scientific and Applied Research 8, no. 1 (October 12, 2015): 5–9. http://dx.doi.org/10.46687/jsar.v8i1.171.

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50

Boudjella, Aissa, Zhongfang Jin, and Yvon Savaria. "Electrical Field Analysis of Nanoscale Field Effect Transistors." Japanese Journal of Applied Physics 43, no. 6B (June 29, 2004): 3831–37. http://dx.doi.org/10.1143/jjap.43.3831.

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