Dissertations / Theses on the topic 'Field defect'
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Howard, Neil John. "Defect-tolerant Field-Programmable Gate Arrays." Thesis, University of York, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.359290.
Full textAudet, Yves. "A magnetic field sensor array using redundancy schemes for defect avoidance." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1997. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape11/PQDD_0024/NQ51838.pdf.
Full textSimm, Anthony. "Quantitative interpretation of magnetic field measurements in eddy current defect detection." Thesis, University of Newcastle Upon Tyne, 2013. http://hdl.handle.net/10443/1809.
Full textZhang, Yanjing. "Electric and magnetic contributions and defect interactions in remote field eddy current techniques." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1997. http://www.collectionscanada.ca/obj/s4/f2/dsk3/ftp04/nq22507.pdf.
Full textLotharukpong, Chalothorn. "Defect characterisation in multi-crystalline silicon." Thesis, University of Oxford, 2015. http://ora.ox.ac.uk/objects/uuid:a803fada-2296-41c3-9d96-864c186957a2.
Full textWong, Justin Jong Leong Medical Sciences Faculty of Medicine UNSW. "The role of DNA methylation in the development of colorectal neoplasia." Publisher:University of New South Wales. Medical Sciences, 2008. http://handle.unsw.edu.au/1959.4/43359.
Full textCai, Sophie. "Clinical Correlates of Computationally Derived Visual Field Defect Archetypes in Patients From a Glaucoma Clinic." Thesis, Harvard University, 2015. http://nrs.harvard.edu/urn-3:HUL.InstRepos:17295912.
Full textNawaz, Ali. "Modification of charge transport properties in defect-free poly(3-hexylthiophene-2,5-diyl) field-effect transistors." reponame:Repositório Institucional da UFPR, 2017. http://hdl.handle.net/1884/53109.
Full textTese (doutorado) - Universidade Federal do Paraná, Setor de Ciências Exatas, Curso de Pós-Graduação em Física. Defesa: Curitiba, 15/12/2017
Inclui referências : f. 93-102
Resumo: O trabalho atual investiga a melhoria das propriedades de transporte de carga em transistores de efeito de campo de baixa tensão (FETs), que utilizam poli(3-hexiltiofeno-2,5-diil) (P3HT) não-100% e 100% regioregular como os semicondutores orgânicos, e poli(álcool vinílico) reticulado (cr-PVA) como isolante. O trabalho de pesquisa realizado durante o projeto pode ser dividido em duas partes. A primeira parte investiga a melhoria das propriedades de transporte de carga na interface cr-PVA/P3HT, e a influência de defeitos de regioregularidade de P3HT nas propriedades da interface. A segunda parte demonstra a preparação de filmes finos que consistem em moléculas alinhadas de P3HT 100% regioregular e, consequentemente, a aplicação desses filmes alinhados para o desenvolvimento de dispositivos de alto desempenho. No caso da primeira parte, o problema essencial é que o transporte de carga na interface de cr-PVA/P3HT está limitado pela presença de armadilhas na interface que correspondem aos dipolos de superfície de cr-PVA. Esses dipolos de superfície possuem a capacidade de modificar a distribuição de carga em moléculas adjacentes de P3HT, o que pode levar à localização e a captura de cargas. Isso representa um problema fisico complexo, sendo que a variação de energia potencial na interface depende da posição e orientação das armadilhas dipolares em relação às moléculas de P3HT. No entanto, a solução é conceitualmente simples, pois, em princípio, é apenas necessário passivar as armadilhas. Para conseguir isso, é apresentada uma técnica experimental econômica, na qual a superfície de cr-PVA é tratada com um surfactante catiônico, brometo de hexadeciltrimetilamónio (CTAB). As cabeças hidrofílicas carregadas positivamente de CTAB visam a passivação das armadilhas carregadas negativamente da superfície de cr-PVA. A deposição de CTAB sobre o cr-PVA, em relação ao cr-PVA somente, resulta em aumento significativo na capacitância do isolanate (Ci), e as imagens de microscopia de força atômica (AFM) mostram que a superfície de cr-PVA é coberta com grãos de surfactante bem conectados. Em caso de dispositivos baseados em P3HT não-100% regioregular, este tratamento resulta em uma melhora da mobilidade de efeito de campo (?FET) por um fator de ~3 (?FET médio de 0.44 cm2/V.s) quando comparado aos dispositivos não tratados. Para investigar como o tratamento do surfactante modifica o transporte de carga na interface, a variação de ?FET em função da espessura efetiva do gargalo do canal (l0) também é analisada e discutida detalhadamente. Curiosamente, ao contrário dos dispositivos baseado em P3HT não-100% regioregular, o tratamento com surfactante em dispositivos baseado em P3HT 100% regioregular resulta em degradação de ?FET e do desempenho geral dos dispositivos. Isso indica que a interação de defeitos de regioregularidade e armadilhas de superfície de cr-PVA é um fator crítico que afeta as propriedades de transporte de carga na interface cr-PVA/P3HT. Para investigar este assunto, a interação das moléculas de P3HT não-100% e 100% regioregular com dipolos de superfície de cr-PVA é investigada usando espectroscopia de absorbância, AFM e cálculos de química quântica. Observa-se que, dependendo da presença ou ausência de defeitos de regioregularidade de P3HT (e, portanto, da planaridade molecular), o contato entre as moléculas de P3HT e os dipolos de superfície de cr-PVA afeta a ordem molecular do P3HT de forma diferente. Por causa dos defeitos de regioregularidade, as moléculas de polímero não-100% regioregular produzem momentos de dipolo mais altos em comparação com moléculas 100% regioregular. Consequentemente, discute-se como a interação de moléculas de P3HT não-100% e 100% regioregular com dipolos de cr-PVA contribuem à desordem energética na interface cr-PVA/P3HT. Neste caso, o transporte de carga em dispositivos de FET é investigado para quatro espessuras diferentes de P3HT não-100% e 100% regioregular. Os resultados elétricos mostram que o comportamento de ?FET × l0 e a dependência de ?FET na espessura do canal são uma função forte da presença ou ausência de defeitos de regioregularidade de P3HT. Neste trabalho, os dispositivos (não tratados) baseados em P3HT 100% regioregular demonstram ?FET tão alto quanto 1.20 cm2/V.s. Esses valores tornam esses dispositivos reconhecíveis para a integração em várias aplicações comerciais. No entanto, um desenho de circuitos para muitas outras aplicações de alto desempenho impõem um requisito de ?FET mais rigoroso (> 5 cm2/V.s). Para alcançar este marco, na segunda parte do projeto de pesquisa, está apresentada uma técnica de deposição simples (chamado, floating-film transfer method, em inglês), que permite o alinhamento supra-molecular das moléculas de P3HT 100% regioregular. A aplicação de filmes de polímero alinhados em FETs resulta em valores de ?FET de até 8 cm2/V.s, que é o valor mais alto reportado até agora para os FETs baseados em P3HT. Palavras-chaves: Transistores orgânicos de efeito de campo, poli(3-hexiltiofeno-2,5-diil) livre de defeitos, regioregularidade, poli(álcool vinílico) reticulado, interface isolante/semicondutor, armadilhas dipolares.
Abstract: The current work investigates the improvement of charge transport properties in low-voltage organic field-effect transistors (OFETs) that utilize non-100% and 100% regioregular poly(3-hexylthiophene-2,5-diyl) (P3HT) as the organic semiconductors, and cross-linked poly(vinyl alcohol) (cr-PVA) as the gate insulator. The essential research work performed during the project can be divided into two parts. The first part investigates the improvement of charge transport properties at the cr-PVA/P3HT interface, and the influence of regioregularity defects of P3HT on interface properties. The second part demonstrates the development of high performance OFETs based on supra-molecularly aligned thin films of 100% regioregular P3HT. In the case of the first part, the essential problem in hand is that charge transport at the cr-PVA/P3HT interface is limited by the presence of charge traps at the interface corresponding to the surface dipoles of cr-PVA. These surface dipoles hold the ability to modify charge distribution on adjacent P3HT molecules, which can lead to localization and trapping of otherwise mobile charge carriers. This presents a physically complex problem, since the potential energy variations at the interface depends on the position and orientation of the dipolar traps with respect to P3HT molecules. However, the solution is conceptually simple since, in principle, it is only required to passivate the traps. In order to achieve this, a cost-effective experimental technique is presented, in which the cr-PVA surface is treated with a cationic surfactant, hexadecyltrimethylammonium bromide (CTAB). The positively charged hydrophilic heads of CTAB are aimed at passivating the negatively charged traps of the cr-PVA surface. The deposition of CTAB over cr-PVA leads to significant enhancement in gate insulator capacitance (Ci), and the atomic force microscopy (AFM) images show that the cr-PVA surface is covered with well-connected surfactant grains. In the case of non-100% regioregular P3HT OFETs, this treatment results in an improvement of field-effect mobility (?FET) by a factor of ~3 (average ?FET of 0.44 cm2/V.s) when compared to untreated devices. In order to investigate how the surfactant treatment modifies charge transport at the interface, variation of ?FET as a function of the effective bottleneck thickness of the conducting channel (l0) is also analyzed and thoroughly discussed. Quite interestingly, contrary to non-100% regioregular P3HT devices, the surfactant treatment in 100% regioregular P3HT devices leads to degradation of ?FET and overall device performance. This indicates that the interaction of regioregularity defects and cr-PVA surface traps is a crucial factor affecting charge transport properties at the cr-PVA/P3HT interface. In order to address this issue, the interaction of non-100% and 100% regioregular P3HT molecules with cr-PVA surface dipoles is investigated using UV-vis absorbance spectroscopy, AFM and quantum chemical calculations. It is observed that, depending on the presence or absence of regioregularity defects of P3HT (and thus the molecular planarity); the intimate contact between P3HT molecules and cr-PVA surface dipoles affects the molecular order of P3HT differently. Because of the regioregularity defects, the non-100% regioregular polymer molecules produce higher dipole moments compared to 100% regioregular molecules. Consequently, it is discussed how the interaction of non-100% and 100% regioregular P3HT molecules with cr-PVA surface dipoles contribute differently to the potential energy variations at the cr-PVA/P3HT interface. In this case, the charge transport in FET devices is investigated for four different thicknesses of both non-100% and 100% regioregular P3HT. The electrical results reveal that the behavior of ?FET × l0 and the dependence of ?FET on channel thickness are a strong function of the presence/absence of the regioregularity defects of P3HT. In this project, the untreated 100% regioregular P3HT devices demonstrate ?FET as high as 1.20 cm2/V.s. Such high values make these devices recognizable for translation to various commercial applications. However, the circuit designs of many other high performance applications impose a more stringent ?FET requirement (> 5 cm2/V.s). In order to achieve this landmark, in the second part of the research project, a simple and cost-effective deposition technique (floating-film transfer method) is presented, which allows supra-molecular alignment of 100% regioregular P3HT molecules. The application of aligned polymer films in FET devices leads to the demonstration of ?FET values as high as 8 cm2/V.s, which is the highest value reported so far for P3HT based OFETs. Keywords: Organic field-effect transistors, defect-free poly(3-hexylthiophene-2,5-diyl), regioregularity, cross-linked poly(vinyl alcohol), insulator/semiconductor interface, dipolar charge traps.
Söderberg, Alexander. "Anomalous Dimensions in the WF O(N) Model with a Monodromy Line Defect." Thesis, Uppsala universitet, Teoretisk fysik, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-317546.
Full textJohnson, Jay Tillay. "Defect and thickness inspection system for cast thin films using machine vision and full-field transmission densitometry." Thesis, Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/37234.
Full textStigner, Carl. "Hopf and Frobenius algebras in conformal field theory." Doctoral thesis, Karlstads universitet, Avdelningen för fysik och elektroteknik, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:kau:diva-14456.
Full textNeethling, Pieter Herman. "Electric field induced second harmonic (EFISH) measurements of highly boron doped p-type Si/SiO2." Thesis, Stellenbosch : Stellenbosch University, 2008. http://hdl.handle.net/10019.1/1186.
Full textThe advent of high intensity short pulse lasers has opened the door to investigating buried solid-solid interfaces through the technique of optical second harmonic generation (SHG). This has led to extensive study of technologically important systems such as the Si/SiO2 interface. In this study, SHG is employed to study the interface between highly boron doped p+-type Si and its native oxide layer (SiO2). Previous studies from this laboratory have extensively investigated the photo-induced charge transfer process across the Si/SiO2 interface in the case of undoped natively oxidized Si by means of SHG, with initial SHG measurements being performed on boron doped p+-type Si. The natively oxidized p+-type Si/SiO2 sample was placed on a computer controlled positioning system which allowed for translation of the sample and rotation around the azimuth. The laser system employed was characterized in terms of spectral composition, pulse duration, pulse repetition rate, spatial pro le and pulse energy in order to ensure quantitative measurements. The SHG signal generated from the sample interface was recorded in re ection. Under the applied irradiation conditions, defects are created at the interface by the near infra red (NIR) femtosecond radiation from the laser. These defects are then populated via multi-photon processes by electrons and to a lesser extent holes. The charge transfer across the interface induces an interfacial electric eld. This photo-induced electric eld is in addition to the built-in interfacial electric eld caused by positive ionization of naturally occurring interfacial defects due to the strong doping of the bulk Si. It is this interfacial electric eld, consisting of the built-in doping induced eld and the photo-induced electron and hole elds, that is probed by SHG. The SHG signal is strongly dependent on the magnitude of this interfacial electric eld as the electric eld induced second harmonic (EFISH) signal dominates all other contributions to the observed SHG signal in the case of the Si/SiO2 system. The temporal evolution of the SHG signal is recorded for di erent intensities from virgin as well as the pre-irradiated samples. This yields information about the time scales on which the charge separation occurs as well as the in- uence of existing photo-induced trap sites on the charge separation process, since the strength of the SHG signal is an indirect measure of the interfacial electric eld strength. The angular dependence of the SHG signal (SH rotational anisotropy measurements) for both the initial signal (when the doping induced electric eld dominates) and the saturated signal (when the electron induced electric eld dominates) is measured. Both these measurements show a four fold symmetry but with a relative 45 phase shift between them. This iii is taken as con rmation of the reversal of the interfacial electric eld direction. The initial SHG signal as a function of intensity is also recorded for di erent incident wavelengths. The variation in the non-quadratic dependence of the initial SHG signal on the incident intensity is attributed to a resonant enhancement of two-photon absorption and subsequent screening of the interfacial electric eld by charge carriers. The measurement performed and the results obtained contribute to the understanding of the photo-induced charge separation process across buried solid-solid interfaces, speci cally as it applies to the important Si/SiO2 interface.
Facista, Alexander, Huy Nguyen, Cristy Lewis, Anil Prasad, Lois Ramsey, Beryl Zaitlin, Valentine Nfonsam, et al. "Deficient expression of DNA repair enzymes in early progression to sporadic colon cancer." BioMed Central, 2012. http://hdl.handle.net/10150/610153.
Full textGill, Alasdair James. "Field theory and topological defects." Thesis, Imperial College London, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.244675.
Full textSchmidt, Robert. "Defects in Higher-Dimensional Quantum Field Theory." Diss., lmu, 2007. http://nbn-resolving.de/urn:nbn:de:bvb:19-71937.
Full textRobertson, Craig. "On defects in affine Toda field theory." Thesis, Durham University, 2015. http://etheses.dur.ac.uk/11071/.
Full textGraham, Craig Nicholas. "Novel measurements of defects in field effect transistors." Thesis, Lancaster University, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.404264.
Full textBristow, Rebecca Helen. "Momentum conserving defects in affine Toda field theory." Thesis, Durham University, 2018. http://etheses.dur.ac.uk/12488/.
Full textDonaire, Manuel. "Formation of topological defects in gauge field theories." Thesis, University of Cambridge, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.613012.
Full textRoa, Aguirre Alexis [UNESP]. "Type-II defects in integrable classical field theories." Universidade Estadual Paulista (UNESP), 2012. http://hdl.handle.net/11449/102532.
Full textFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
Nesta tese discutimos as propriedades de integrabilidade das teorias de campo clássicas em duas dimensões na presença de descontinuidades ou defeitos tipo-II, principalmente usando a linguagem do formalismo do espalhamento inverso. Um método geral para calcular a função geradora de um conjunto infinito de grandezas conservadas modificadas para qualquer equação de campo integrável é apresentado, uma vez que seus respetivos problemas lineares associados são dados e suas correspondentes matrices do defeito são calculadas. O método é aplicado no cálculo das contribuições dos defeitos para a energia e o momento para vários modelos e mostramos a relação entre as condições de defeito integráveis e suas respevtivas transformações de Bäcklund para cada modelo
In this thesis we discuss the integrability properties of two-dimensional classical field theories in the presence of discontinuities or type-II defects, mainly using the language of the inverses cattering approach. We present a general method to compute the generating function of an infinite set of modified conserved quantities for any integrable field equation givent heir associated linear problems and computing their corresponding defect matrices. We apply this method to derive in particular defect contributions to the energy and momentum for several models and show the relationship between the integrable defect conditions and the Bäcklund transformations for each model
Roa, Aguirre Alexis. "Type-II defects in integrable classical field theories /." São Paulo, 2012. http://hdl.handle.net/11449/102532.
Full textBanca: Clisthenis Ponce Constantinidis
Banca: Harold Socrates Blas Achic
Banca: Andrei Mikhailov
Banca: Marcio José Martins
Resumo: Nesta tese discutimos as propriedades de integrabilidade das teorias de campo clássicas em duas dimensões na presença de descontinuidades ou defeitos tipo-II, principalmente usando a linguagem do formalismo do espalhamento inverso. Um método geral para calcular a função geradora de um conjunto infinito de grandezas conservadas modificadas para qualquer equação de campo integrável é apresentado, uma vez que seus respetivos problemas lineares associados são dados e suas correspondentes matrices do defeito são calculadas. O método é aplicado no cálculo das contribuições dos defeitos para a energia e o momento para vários modelos e mostramos a relação entre as condições de defeito integráveis e suas respevtivas transformações de Bäcklund para cada modelo
Abstract: In this thesis we discuss the integrability properties of two-dimensional classical field theories in the presence of discontinuities or type-II defects, mainly using the language of the inverses cattering approach. We present a general method to compute the generating function of an infinite set of modified conserved quantities for any integrable field equation givent heir associated linear problems and computing their corresponding defect matrices. We apply this method to derive in particular defect contributions to the energy and momentum for several models and show the relationship between the integrable defect conditions and the Bäcklund transformations for each model
Doutor
Manolopoulos, Dimitris. "Fusion of perturbed defects in conformal field theory." Thesis, King's College London (University of London), 2012. https://kclpure.kcl.ac.uk/portal/en/theses/fusion-of-perturbed-defects-in-conformal-field-theory(23890e88-b5cf-4c59-910a-5ed4d8f8acfc).html.
Full textLindner, Niels. "Hypersurfaces with defect and their densities over finite fields." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät, 2017. http://dx.doi.org/10.18452/17704.
Full textThe first topic of this dissertation is the defect of projective hypersurfaces. It is indicated that hypersurfaces with defect have a rather large singular locus. In the first chapter of this thesis, this will be made precise and proven for hypersurfaces with arbitrary isolated singularities over a field of characteristic zero, and for certain classes of hypersurfaces in positive characteristic. Moreover, over a finite field, an estimate on the density of hypersurfaces without defect is given. Finally, it is shown that a non-factorial threefold hypersurface with isolated singularities always has defect. The second chapter of this dissertation deals with Bertini theorems over finite fields building upon Poonen’s formula for the density of smooth hypersurface sections in a smooth ambient variety. This will be extended to quasismooth hypersurfaces in simplicial toric varieties. The main application is to show that hypersurfaces admitting a large singular locus compared to their degree have density zero. Furthermore, the chapter contains a Bertini irreducibility theorem for simplicial toric varieties generalizing work of Charles and Poonen. The third chapter continues with density questions over finite fields. In the beginning, certain fibrations over smooth projective bases living in a weighted projective space are considered. The first result is a Bertini-type theorem for smooth fibrations, giving back Poonen’s formula on smooth hypersurfaces. The final section deals with elliptic curves over a function field of a variety of dimension at least two. The techniques developed in the first two sections allow to produce a lower bound on the density of such curves with Mordell-Weil rank zero, improving an estimate of Kloosterman.
Degeiter, Matthieu. "Étude numérique de la dynamique des défauts d’alignement des précipités γ’ dans les superalliages monocristallins à base de nickel." Thesis, Université de Lorraine, 2019. http://www.theses.fr/2019LORR0038/document.
Full textIn multiphase alloys, internal elastic fields often arise as a result of a coherently adjusted misfit between the lattices of coexisting phases. Given their long-range and usually anisotropic nature, the interaction of these fields is known to significantly alter the kinetics of diffusion-controlled phase transformations, as well as influence the shapes and spatial arrangement of the misfitting precipitates. In the microstructure of single-crystal nickel-base superalloys, obtained by precipitation of the L12-ordered γ’ phase in the FCC γ matrix, elasticity leads to the formation of nearly periodic alignments of the cuboidal γ’ precipitates. However, the γ/γ’ microstructure systematically displays defects in the precipitate alignment: branches, macro-dislocations and chevron patterns. We first address the question of the origin of these alignment defects. Stability analyses of the periodic arrangement of elastically interacting precipitates are carried out. Contrary to the expected stability, the semi-analytical calculations revealed the periodic distribution of cubic γ‘ precipitates to be unstable against specific perturbation modes. The main instabilities are the [100] longitudinal mode and the [110] transverse mode, and their instability range is analyzed with respect to the elastic anisotropy. The consequences of these unstable modes are investigated using a classic phase field method, by modeling the evolution of periodic microstructures undergoing small initial perturbations. We show the expression of the instabilities mainly proceeds by the evolution of the precipitate shapes, and leads to the formation of patterns which were related to experimental microstructures. Specifically, the [110] transverse instability is responsible for the formation of chevron patterns. The effects of the volume fraction and of an inhomogeneity on the C’ shear modulus on the stability of the arrangement are studied, and we show the role they play in the partial stabilization of the periodic distribution, though the [100] longitudinal mode always remains unstable. In phase field calculations carried out in previous studies, the dynamics of alignment defects are analyzed by means of topological parameters derived from pattern formation theory. During annealing, branches and macro-dislocations were observed to migrate in the microstructure according to climbing and gliding mechanisms. We then use a new formulation of phase field models, intrinsically discrete, in which the interfaces are resolved with essentially one grid point with no pinning on the grid and an accurate rotational invariance. This approach, known as the Sharp Phase Field Method (S-PFM), is implemented on a FCC grid and accounts for the four translational variants of the γ’ precipitates. We show that the S-PFM allows for the modeling of large-scale microstructures, with several thousand precipitates both in two and three dimensions, and provides access to statistical information on the microstructure evolution and on the the dynamics of alignment defects. We finally discuss the perspective of modeling the evolution of the γ/γ’ microstructure at the macroscale by means of a description of the defect dynamics in the precipitate alignments
Bergugnat, Jean-Baptiste. "Strain and lattice rotation fields of deformed polycrystals." Thesis, Georgia Institute of Technology, 2002. http://hdl.handle.net/1853/17899.
Full textGururajan, M. P. "Mean Field Study Of Point Defects In B2-NiAl." Thesis, Indian Institute of Science, 2000. http://hdl.handle.net/2005/186.
Full textHills, Daniel. "Generating boundary conditions for integrable field theories using defects." Thesis, University of York, 2016. http://etheses.whiterose.ac.uk/16379/.
Full textPigott, Jeffrey Scott. "Exploration of Earth's Deep Interior by Merging Nanotechnology, Diamond-Anvil Cell Experiments, and Computational Crystal Chemistry." The Ohio State University, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=osu1435154850.
Full textLinke, Yannick [Verfasser], and Volker [Akademischer Betreuer] Schomerus. "Defects in Conformal Field Theories / Yannick Linke ; Betreuer: Volker Schomerus." Hamburg : Staats- und Universitätsbibliothek Hamburg, 2018. http://d-nb.info/117142728X/34.
Full textParini, Robert Charles. "Classical integrable field theories with defects and near-integrable boundaries." Thesis, University of York, 2018. http://etheses.whiterose.ac.uk/20428/.
Full textThorsell, Thomas. "Advances in Thermal Insulation : Vacuum Insulation Panels and Thermal Efficiency to Reduce Energy Usage in Buildings." Doctoral thesis, KTH, Byggnadsteknik, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-90745.
Full textQC 20120228
Gonzalez, Pedro Antonio. "Study of visual field defects in patients with epilepsy receiving Vigabatrin." Thesis, University of Glasgow, 2009. http://theses.gla.ac.uk/543/.
Full textSmith, Nicholas David. "Eye movements, search and perception of visual field defects in glaucoma." Thesis, City University London, 2011. http://openaccess.city.ac.uk/1132/.
Full textZhang, Chiqun. "Theory and Computation of Line Defect Fields in Solids and Liquid Crystals." Research Showcase @ CMU, 2017. http://repository.cmu.edu/dissertations/1058.
Full textHenley, S. J. "Cathodoluminescence studies of defects and piezoelectric fields in GaN." Thesis, University of Bristol, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.391184.
Full textCochrane, Kate A. "Some tests of residual visual functioning in humans with damage to the striate cortex." Thesis, University of Oxford, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.282394.
Full textAntunes, Nuno Dias. "Equilibrium and non-equilibrium aspects of early universe phase transitions." Thesis, University of Sussex, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.264553.
Full textDundon, Neil Michael <1984>. "Residual function, spontaneous reorganisation and treatment plasticity in homonymous visual field defects." Doctoral thesis, Alma Mater Studiorum - Università di Bologna, 2015. http://amsdottorato.unibo.it/6872/.
Full textMusa, Azuwan. "The efficacy of visuomotor compensatory training for individuals with visual field defects." Thesis, Durham University, 2018. http://etheses.dur.ac.uk/12908/.
Full textLane, Alison R. "Clinical evaluation of behavioural interventions for patients with homonymous visual field defects." Thesis, Durham University, 2009. http://etheses.dur.ac.uk/1932/.
Full textLundmark, Martin. "Transatlantic defence industry integration : discourse and action in the organizational field of the defence market." Doctoral thesis, Handelshögskolan i Stockholm, Institutionen för Marknadsföring och strategi, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:hhs:diva-1537.
Full textDiss. Stockholm : Handelshögskolan i Stockholm, 2011
Cantin, G. M. Delphine. "An investigation of the formation of hollow bead defects in pipeline field welds /." Title page, contents and abstract only, 1997. http://web4.library.adelaide.edu.au/theses/09PH/09phc231.pdf.
Full textMorgan, Jason Phillip. "Ordering and defects in artificial magnetic square ice : thermodynamic and field-driven processes." Thesis, University of Leeds, 2011. http://etheses.whiterose.ac.uk/2421/.
Full textKumari, Anita. "Design Issues in Magnetic Field Coupled Array: Clock Structure, Fabrication Defects and Dipolar Coupling." Scholar Commons, 2011. http://scholarcommons.usf.edu/etd/3194.
Full textMokhtari, Hossein. "Transmission electron microscopy of defects and internal fields in GaN structures." Thesis, University of Bristol, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.368206.
Full textLang, Volker. "Electrically detected magnetic resonance in semiconductor and carbon nanodevices." Thesis, University of Oxford, 2012. http://ora.ox.ac.uk/objects/uuid:614ed1d1-0304-4356-8bd3-eb0ce7bd6c9d.
Full textNsengiyumva, Schadrack. "The mutual influence of strain fields and point defect distributions in krypton implanted polycrystalline titanium." Doctoral thesis, University of Cape Town, 2008. http://hdl.handle.net/11427/11812.
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Stress migration of point and open-volume defects in materials is an important problem in a wide variety of applications, such as degradation of metallic interconnects in semiconductor devices, metal fatigue, and radiation damage profiles in ion implantation and surface modification. From a fundamental research view point, this study aims to contribute to a better understanding of the basic processes underlying the effect of stress assisted diffusion of foreign interstitial atoms under stress fields, using the Rutherford backscattering to obtain depth profiles, and synchroton radiation diffraction for the determination of stress fields. This has been achieved by creating a well designed model system of krypton implanted polycrystalline titanium.
Schurr, Dennis Patrick. "Monitoring damage in concrete using diffuse ultrasonic coda wave interferometry." Thesis, Georgia Institute of Technology, 2010. http://hdl.handle.net/1853/37237.
Full textJaud, Daniel [Verfasser], and Ilka [Akademischer Betreuer] Brunner. "Topological defects in conformal field theories, entanglement entropy and indices / Daniel Jaud ; Betreuer: Ilka Brunner." München : Universitätsbibliothek der Ludwig-Maximilians-Universität, 2017. http://d-nb.info/1139977989/34.
Full textZuo, Yinan [Verfasser], Bai-Xiang [Akademischer Betreuer] Xu, and Yuri [Akademischer Betreuer] Genenko. "Phase field modeling of ferroelectrics with point defects / Yinan Zuo ; Bai-Xiang Xu, Yuri Genenko." Darmstadt : Universitäts- und Landesbibliothek Darmstadt, 2016. http://d-nb.info/1122286201/34.
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