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Academic literature on the topic 'Field defect'

Author: Grafiati

Published: 4 June 2021

Last updated: 4 February 2022

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Journal articles on the topic "Field defect"

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Dzhala, R. M., V. R. Dzhala, M. I. Melnyk, B. I. Horon, and O. I. Senyuk. "Influence of the pipe defect on its magnetic field." Information extraction and processing 2018, no. 46 (December 27, 2018): 5–10. http://dx.doi.org/10.15407/vidbir2018.46.005.

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Foroozan, Rod, and Lawrence M. Buono. "Foggy visual field defect." Survey of Ophthalmology 48, no. 4 (July 2003): 447–51. http://dx.doi.org/10.1016/s0039-6257(03)00051-1.

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Vaphiades, Michael S., and John Mason. "Foggy visual field defect." Survey of Ophthalmology 49, no. 2 (March 2004): 266–67. http://dx.doi.org/10.1016/j.survophthal.2003.12.004.

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Toriello, Helga V., John M. Opitz, and James F. Reynolds. "The arhinencephaly field defect." American Journal of Medical Genetics 25, S2 (1986): 73–76. http://dx.doi.org/10.1002/ajmg.1320250611.

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CAUDRELIER, V. "ON A SYSTEMATIC APPROACH TO DEFECTS IN CLASSICAL INTEGRABLE FIELD THEORIES." International Journal of Geometric Methods in Modern Physics 05, no. 07 (November 2008): 1085–108. http://dx.doi.org/10.1142/s0219887808003223.

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We present an inverse scattering approach to defects in classical integrable field theories. Integrability is proved systematically by constructing the generating function of the infinite set of modified integrals of motion. The contribution of the defect to all orders is explicitely identified in terms of a defect matrix. The underlying geometric picture is that those defects correspond to Bäcklund transformations localized at a given point. A classification of defect matrices as well as the corresponding defect conditions is performed. The method is applied to a collection of well-known integrable models and previous results are recovered (and extended) directly as special cases. Finally, a brief discussion of the classical r-matrix approach in this context shows the relation to inhomogeneous lattice models and the need to resort to lattice regularizations of integrable field theories with defects.

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He, Shaobo, Liang Yang, Li Li, and Xiao-Tao Zu. "The Electric Field Modulation by Hemisphere Damage Sites in Fused Silica Subsurface." Advances in Condensed Matter Physics 2014 (2014): 1–5. http://dx.doi.org/10.1155/2014/843261.

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The effect of defect density on the electric field modulation to incident laser is investigated in this work. Based on the actual defect distribution in fused silica subsurface, the three-dimension grid model of defect sites is constructed firstly. Then, the three-dimension finite-difference time-domain method is developed to solve the Maxwell equations. The electric field intensity in the vicinity of the defect sites located in front subsurface of fused silica is numerically calculated. The relationships between the maximal electric field intensity in fused silica and the geometry of the defect sites are given. The simulated results reveal that the modulation becomes more remarkable with the increase of defects density firstly and then decrease. Besides, the effect of the distribution mode of defects on modulation is discussed. Meanwhile, the possible physical mechanism is analyzed in detail.

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Xu, Wen Ji, Ji Shang Jiang, Xu Yue Wang, and Wen Qing Song. "Temperature Field Model in Plasma Arc Forming of Laminated Clad Metal Sheets Containing Defects." Advanced Materials Research 97-101 (March 2010): 4160–63. http://dx.doi.org/10.4028/www.scientific.net/amr.97-101.4160.

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A FEM model, based on the structural characteristics of laminated clad metal sheets (LCMS) containing defects, was developed to study the variations of temperature field in the flexible forming using plasma arc. The typical LCMS Q235A/1Cr18Ni9Ti was selected as the sample, and the effects of different defects in the bonding interface on the temperature field were analyzed. The results show that the peak value of temperature containing defect is 107 oC higher than that without defect under the same processing parameters. The peak values of temperature and temperature difference increase with the increasing of defect size, but decrease when the location of defect is far away from the heating surface of LCMS. Compared with spherical defect, cubic defect has more power to impede heat conduction along the thickness direction of LCMS.

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Zhu, Wenfa, Yujie Zhang, Guopeng Fan, Haiyan Zhang, and Shao Wei. "Time-domain topological energy imaging with ultrasonic Lamb waves considering multiple defects." Insight - Non-Destructive Testing and Condition Monitoring 62, no. 4 (April 1, 2020): 208–15. http://dx.doi.org/10.1784/insi.2020.62.4.208.

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This study presents a fast imaging approach with ultrasonic Lamb waves based on time-domain topological energy to identify multiple defects with defect spacing smaller than the threshold of the Rayleigh criterion in terms of imaging resolution. The direct acoustical field and time-domain topological energy of the two fields are used as imaging functions when considering the calculation of direct and adjoint acoustical fields in a non-defective reference medium on the basis of topological theory. The functions are not limited by acoustic diffraction and can achieve super-resolution imaging with multiple defects. First, a 3D finite element model is established. Transient acoustic field diagrams at different moments are used to show the focusing process of direct and adjoint acoustical fields clearly with multiple defects, thereby revealing the physical mechanism of time-domain topological energy imaging. Second, the effectiveness of the proposed approach to characterise multiple defects when the defect spacing is smaller than the imaging resolution threshold is verified through numerical simulation. Finally, the feasibility of super-resolution imaging considering multiple defects is proven by conducting experiments on aluminium plate samples with multiple defects under different defect spacing conditions. Numerical simulation and experimental results show that the proposed approach can overcome the problem of multiple defects with defect spacing smaller than the imaging resolution threshold by breaking the Rayleigh criterion constraint, while the accuracy presented is higher than that of the traditional delay-and-sum method.

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Konik, Robert, and André LeClair. "Purely transmitting defect field theories." Nuclear Physics B 538, no. 3 (January 1999): 587–611. http://dx.doi.org/10.1016/s0550-3213(98)00712-3.

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Larner, A. J. "A developing visual field defect." Postgraduate Medical Journal 78, no. 916 (February 1, 2002): 106. http://dx.doi.org/10.1136/pmj.78.916.106.

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Dissertations / Theses on the topic "Field defect"

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Howard, Neil John. "Defect-tolerant Field-Programmable Gate Arrays." Thesis, University of York, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.359290.

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Audet, Yves. "A magnetic field sensor array using redundancy schemes for defect avoidance." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1997. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape11/PQDD_0024/NQ51838.pdf.

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Simm, Anthony. "Quantitative interpretation of magnetic field measurements in eddy current defect detection." Thesis, University of Newcastle Upon Tyne, 2013. http://hdl.handle.net/10443/1809.

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For many years, the theoretical and experimental study of eddy current non-destructive evaluation (NDE) has been conducted separately, as most models were not suited to practical industrial applications. The aim of this work is to bridge this gap by investigating the relationship between magnetic fields and defects using both modelling and experimental study and to link these results to quantitative NDE. In this work, 3D FEM numerical simulations are used to predict the response of an eddy current probe being scanned over the area of a defect and understand the underlying change in magnetic field due to the presence of the defect. Experimental investigations are performed to study the feasibility of the proposed magnetic field measurement techniques for defect detection. This experimental work investigates the inspection of both surface and subsurface defects, the use of rectangular (directional) probes and the measurement of complex magnetic field values, as the response in these cases has been found to have a greater correlation with the shape of the defect being studied. As well as the detection of defects, both frequency spectrum and transient information from pulsed eddy current responses are used to reconstruct the profile (depth and width) of a slot shaped defect. The work concludes that the use of magnetic field measurements provides useful information for defect detection and quantification. This will have applications in both industrial and research areas, including visualisation of defects from magnetic field measurements, which can be applied to the monitoring of safety critical components.

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Zhang, Yanjing. "Electric and magnetic contributions and defect interactions in remote field eddy current techniques." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1997. http://www.collectionscanada.ca/obj/s4/f2/dsk3/ftp04/nq22507.pdf.

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Lotharukpong, Chalothorn. "Defect characterisation in multi-crystalline silicon." Thesis, University of Oxford, 2015. http://ora.ox.ac.uk/objects/uuid:a803fada-2296-41c3-9d96-864c186957a2.

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Electron beam induced current (EBIC) and atom probe tomography (APT) were used in this study to determine electrical activities and impurity compositions at extended defects in multicrystalline silicon (mc-Si) samples. The results provide, for the first time, information regarding the chemical species present at defects whose electrical activity has previously been measured. A new APT specimen fabrication process was developed with the ability to select a specific defect for APT analysis. Development of the APT specimen fabrication process proceeded by first selecting and optimising the preferential etching for nano-scale defect delineation. Three etchants were evaluated, namely Secco, Sirtl and Dash, from which the Secco etch was selected. Three parameters were optimised to produce etch pits with geometries that meet the requirements imposed by APT specimen fabrication methods. The optimum parameters were 0.05M potassium dichromate concentration, 20°C etch temperature, and 30sec etch time. In the second stage, marking techniques were developed in order for the defects to be located throughout the APT specimen fabrication process. However, it became apparent that the conventional APT specimen fabrication method could not be used to fabricate APT specimens containing selected defects in a mc-Si sample. This led to the development of a novel APT specimen fabrication approach which allowed APT specimens to be fabricated, reproducibly, containing grain boundaries and isolated dislocations. In order to evaluate accurately iron contamination in mc-Si, four atom probe parameters were optimised to maximise detection sensitivity: the evaporation rate, the laser beam energy, the pulse repetition rate and the specimen temperature. The optimisation process can be divided in to two parts. In the first part, a matrix of pre-sharpened single-crystal silicon specimens was subjected to a variety of experimental parameters. The optimised parameters were determined to be 0.3% evaporation rate, 0.5nJ beam energy, 160kHz repetition rate and 55K specimen temperature. The second part was to determine the iron detection efficiency –the percentage of detected Fe ions that can be correctly identified as Fe– and sensitivity using these parameters to analyse a specially prepared iron calibration specimen. The values were determined to be a detection efficiency of about 35% and sensitivity of 54ppm or 2.70x10¹⁸ atom/cm³. The APT specimen fabrication process and the optimised APT analysis parameters were used to analyse four extended defects in mc-Si samples subjected to three different processing conditions, namely gold-contaminated, as-grown and phosphorus diffusion gettering (PDG). The important aspects of the analysis are listed below: • Gold was not detected at the grain boundary and its associated dislocations in the gold-contaminated specimen. The binding enthalpy of gold to such defects is thus less than 0.63eV. • Iron was not detected in any specimen. • Copper was observed at the grain boundary in the as-grown specimen in the form of individual atoms as well as clusters with diameters ranging between 4nm and 9nm. The electrical activity of the grain boundary was about 58%. • Nickel and carbon were detected at the grain boundary in the post-PDG specimen with the former having platelet structures with diameters and thicknesses ranging between 4nm-7nm and 2nm-4nm, respectively. The recombination strength of the defect was about 22%. • Two nickel clusters were found at the isolated dislocation in the post-PDG specimen. The clusters were spherical with an average diameter of 10nm. The distance between the two clusters was 35nm. The recombination strength of the defect was about 4%.

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Wong, Justin Jong Leong Medical Sciences Faculty of Medicine UNSW. "The role of DNA methylation in the development of colorectal neoplasia." Publisher:University of New South Wales. Medical Sciences, 2008. http://handle.unsw.edu.au/1959.4/43359.

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DNA methylation is increasingly recognised as a significant epigenetic event that may initiate and drive the process of neoplasia in humans. In the colon, DNA methylation of key genes is common in a subset of colorectal cancers. The extent to which DNA methylation at various genes contributes to initiation of colorectal neoplasms is less clear. This study sought to clarify the biological and clinicopathological significance of methylation of various genes in the development of sporadic and familial colorectal neoplasia. Quantitative methylation-specific PCR (qMSP) assays (capable of detecting down to a measureable proportion of 0.1% of the total input DNA) were developed to determine the presence of CpG methylation at a given gene. Methylation of MLH1-C was found in the apparently normal mucosa samples from seven of 104 (7%) of individuals with sporadic colorectal cancer (CRC) showing microsatellite instability (MSI). No methylation of MLH1-C was found in the biological samples of individuals with microsatellite stable (MSS) counterparts (n=131). MLH1-C methylation may be a field defect that predisposes to the development of sporadic colorectal neoplasia, particularly those demonstrating MSI. Methylation of three of five genes within the 3p22 region including AB002340, MLH1, ITGA9, PLCD1 and DLEC1 (regional 3p22 methylation) was found in 83% of sporadic MSI (n=86) and 12% of MSS cancers demonstrating BRAF V600E mutation (n=42). Regional 3p22 correlated strongly with CpG island methylator phenotype (CIMP), and other clinicopathological characteristics typical of CIMP. Thus, regional 3p22 methylation and CIMP may be overlapping phenomena. Regional 3p22 methylation and the BRAF V600E mutation were found in normal colonic mucosa of four individuals with sporadic MSI CRC, and these cases also had multiple synchronous serrated polyps. These molecular aberrancies may predispose some individuals to the development of metachronous serrated neoplasia. Germline epimutations of APC do not contribute towards the development of FAP, AFAP, or hyperplastic polyposis syndromes. However, APC methylation in normal colonic mucosa of these individuals may represent a field defect in the development of futher neoplasms. In conclusion, different patterns of DNA methylation in normal colonic mucosa may represent a field defect important in the development of different subtypes of colorectal neoplasia.

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Cai, Sophie. "Clinical Correlates of Computationally Derived Visual Field Defect Archetypes in Patients From a Glaucoma Clinic." Thesis, Harvard University, 2015. http://nrs.harvard.edu/urn-3:HUL.InstRepos:17295912.

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Purpose: Glaucoma diagnosis and monitoring would benefit from a quantitative visual field (VF) classification system like VF archetypal analysis, where Elze et al. showed that any VF can be represented as a weighted sum of 17 archetype (AT) patterns. We assessed the clinical construct validity of this system by testing for clinical correlates of VF ATs. Methods: From 30,995 reliable Humphrey VFs (24-2), 243 patients were retrospectively selected, comprising the 10 to 20 patients whose VFs had the highest decomposition coefficients for each AT. Corresponding patient systemic and ocular characteristics were obtained and compared between each AT and all others using the two-tailed t-test or Fisher exact test. Results: Mean deviation and pattern standard deviation varied with VF loss severity and focality respectively. Cup-to-disc ratio was more often ≥0.7 for AT6 (central island; P=0.002), AT14 (superior paracentral defect; P=0.016), and AT16 (inferior paracentral defect; P=0.016). Other associations included: AT6 (central island): African ancestry (P<0.001) and younger age (P<0.0001); AT13 (diffuse inferior defect): African ancestry (P=0.006) and chronic angle closure glaucoma (P=0.005); and AT16 (inferior paracentral defect): female sex (P=0.017). Conclusions: Several expected clinical associations support computationally derived VF ATs’ clinical construct validity. New associations identified by exploratory analysis may merit further investigation.

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Nawaz, Ali. "Modification of charge transport properties in defect-free poly(3-hexylthiophene-2,5-diyl) field-effect transistors." reponame:Repositório Institucional da UFPR, 2017. http://hdl.handle.net/1884/53109.

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Orientador: Prof. Dr. Ivo Alexandre Hümmelgen
Tese (doutorado) - Universidade Federal do Paraná, Setor de Ciências Exatas, Curso de Pós-Graduação em Física. Defesa: Curitiba, 15/12/2017
Inclui referências : f. 93-102
Resumo: O trabalho atual investiga a melhoria das propriedades de transporte de carga em transistores de efeito de campo de baixa tensão (FETs), que utilizam poli(3-hexiltiofeno-2,5-diil) (P3HT) não-100% e 100% regioregular como os semicondutores orgânicos, e poli(álcool vinílico) reticulado (cr-PVA) como isolante. O trabalho de pesquisa realizado durante o projeto pode ser dividido em duas partes. A primeira parte investiga a melhoria das propriedades de transporte de carga na interface cr-PVA/P3HT, e a influência de defeitos de regioregularidade de P3HT nas propriedades da interface. A segunda parte demonstra a preparação de filmes finos que consistem em moléculas alinhadas de P3HT 100% regioregular e, consequentemente, a aplicação desses filmes alinhados para o desenvolvimento de dispositivos de alto desempenho. No caso da primeira parte, o problema essencial é que o transporte de carga na interface de cr-PVA/P3HT está limitado pela presença de armadilhas na interface que correspondem aos dipolos de superfície de cr-PVA. Esses dipolos de superfície possuem a capacidade de modificar a distribuição de carga em moléculas adjacentes de P3HT, o que pode levar à localização e a captura de cargas. Isso representa um problema fisico complexo, sendo que a variação de energia potencial na interface depende da posição e orientação das armadilhas dipolares em relação às moléculas de P3HT. No entanto, a solução é conceitualmente simples, pois, em princípio, é apenas necessário passivar as armadilhas. Para conseguir isso, é apresentada uma técnica experimental econômica, na qual a superfície de cr-PVA é tratada com um surfactante catiônico, brometo de hexadeciltrimetilamónio (CTAB). As cabeças hidrofílicas carregadas positivamente de CTAB visam a passivação das armadilhas carregadas negativamente da superfície de cr-PVA. A deposição de CTAB sobre o cr-PVA, em relação ao cr-PVA somente, resulta em aumento significativo na capacitância do isolanate (Ci), e as imagens de microscopia de força atômica (AFM) mostram que a superfície de cr-PVA é coberta com grãos de surfactante bem conectados. Em caso de dispositivos baseados em P3HT não-100% regioregular, este tratamento resulta em uma melhora da mobilidade de efeito de campo (?FET) por um fator de ~3 (?FET médio de 0.44 cm2/V.s) quando comparado aos dispositivos não tratados. Para investigar como o tratamento do surfactante modifica o transporte de carga na interface, a variação de ?FET em função da espessura efetiva do gargalo do canal (l0) também é analisada e discutida detalhadamente. Curiosamente, ao contrário dos dispositivos baseado em P3HT não-100% regioregular, o tratamento com surfactante em dispositivos baseado em P3HT 100% regioregular resulta em degradação de ?FET e do desempenho geral dos dispositivos. Isso indica que a interação de defeitos de regioregularidade e armadilhas de superfície de cr-PVA é um fator crítico que afeta as propriedades de transporte de carga na interface cr-PVA/P3HT. Para investigar este assunto, a interação das moléculas de P3HT não-100% e 100% regioregular com dipolos de superfície de cr-PVA é investigada usando espectroscopia de absorbância, AFM e cálculos de química quântica. Observa-se que, dependendo da presença ou ausência de defeitos de regioregularidade de P3HT (e, portanto, da planaridade molecular), o contato entre as moléculas de P3HT e os dipolos de superfície de cr-PVA afeta a ordem molecular do P3HT de forma diferente. Por causa dos defeitos de regioregularidade, as moléculas de polímero não-100% regioregular produzem momentos de dipolo mais altos em comparação com moléculas 100% regioregular. Consequentemente, discute-se como a interação de moléculas de P3HT não-100% e 100% regioregular com dipolos de cr-PVA contribuem à desordem energética na interface cr-PVA/P3HT. Neste caso, o transporte de carga em dispositivos de FET é investigado para quatro espessuras diferentes de P3HT não-100% e 100% regioregular. Os resultados elétricos mostram que o comportamento de ?FET × l0 e a dependência de ?FET na espessura do canal são uma função forte da presença ou ausência de defeitos de regioregularidade de P3HT. Neste trabalho, os dispositivos (não tratados) baseados em P3HT 100% regioregular demonstram ?FET tão alto quanto 1.20 cm2/V.s. Esses valores tornam esses dispositivos reconhecíveis para a integração em várias aplicações comerciais. No entanto, um desenho de circuitos para muitas outras aplicações de alto desempenho impõem um requisito de ?FET mais rigoroso (> 5 cm2/V.s). Para alcançar este marco, na segunda parte do projeto de pesquisa, está apresentada uma técnica de deposição simples (chamado, floating-film transfer method, em inglês), que permite o alinhamento supra-molecular das moléculas de P3HT 100% regioregular. A aplicação de filmes de polímero alinhados em FETs resulta em valores de ?FET de até 8 cm2/V.s, que é o valor mais alto reportado até agora para os FETs baseados em P3HT. Palavras-chaves: Transistores orgânicos de efeito de campo, poli(3-hexiltiofeno-2,5-diil) livre de defeitos, regioregularidade, poli(álcool vinílico) reticulado, interface isolante/semicondutor, armadilhas dipolares.
Abstract: The current work investigates the improvement of charge transport properties in low-voltage organic field-effect transistors (OFETs) that utilize non-100% and 100% regioregular poly(3-hexylthiophene-2,5-diyl) (P3HT) as the organic semiconductors, and cross-linked poly(vinyl alcohol) (cr-PVA) as the gate insulator. The essential research work performed during the project can be divided into two parts. The first part investigates the improvement of charge transport properties at the cr-PVA/P3HT interface, and the influence of regioregularity defects of P3HT on interface properties. The second part demonstrates the development of high performance OFETs based on supra-molecularly aligned thin films of 100% regioregular P3HT. In the case of the first part, the essential problem in hand is that charge transport at the cr-PVA/P3HT interface is limited by the presence of charge traps at the interface corresponding to the surface dipoles of cr-PVA. These surface dipoles hold the ability to modify charge distribution on adjacent P3HT molecules, which can lead to localization and trapping of otherwise mobile charge carriers. This presents a physically complex problem, since the potential energy variations at the interface depends on the position and orientation of the dipolar traps with respect to P3HT molecules. However, the solution is conceptually simple since, in principle, it is only required to passivate the traps. In order to achieve this, a cost-effective experimental technique is presented, in which the cr-PVA surface is treated with a cationic surfactant, hexadecyltrimethylammonium bromide (CTAB). The positively charged hydrophilic heads of CTAB are aimed at passivating the negatively charged traps of the cr-PVA surface. The deposition of CTAB over cr-PVA leads to significant enhancement in gate insulator capacitance (Ci), and the atomic force microscopy (AFM) images show that the cr-PVA surface is covered with well-connected surfactant grains. In the case of non-100% regioregular P3HT OFETs, this treatment results in an improvement of field-effect mobility (?FET) by a factor of ~3 (average ?FET of 0.44 cm2/V.s) when compared to untreated devices. In order to investigate how the surfactant treatment modifies charge transport at the interface, variation of ?FET as a function of the effective bottleneck thickness of the conducting channel (l0) is also analyzed and thoroughly discussed. Quite interestingly, contrary to non-100% regioregular P3HT devices, the surfactant treatment in 100% regioregular P3HT devices leads to degradation of ?FET and overall device performance. This indicates that the interaction of regioregularity defects and cr-PVA surface traps is a crucial factor affecting charge transport properties at the cr-PVA/P3HT interface. In order to address this issue, the interaction of non-100% and 100% regioregular P3HT molecules with cr-PVA surface dipoles is investigated using UV-vis absorbance spectroscopy, AFM and quantum chemical calculations. It is observed that, depending on the presence or absence of regioregularity defects of P3HT (and thus the molecular planarity); the intimate contact between P3HT molecules and cr-PVA surface dipoles affects the molecular order of P3HT differently. Because of the regioregularity defects, the non-100% regioregular polymer molecules produce higher dipole moments compared to 100% regioregular molecules. Consequently, it is discussed how the interaction of non-100% and 100% regioregular P3HT molecules with cr-PVA surface dipoles contribute differently to the potential energy variations at the cr-PVA/P3HT interface. In this case, the charge transport in FET devices is investigated for four different thicknesses of both non-100% and 100% regioregular P3HT. The electrical results reveal that the behavior of ?FET × l0 and the dependence of ?FET on channel thickness are a strong function of the presence/absence of the regioregularity defects of P3HT. In this project, the untreated 100% regioregular P3HT devices demonstrate ?FET as high as 1.20 cm2/V.s. Such high values make these devices recognizable for translation to various commercial applications. However, the circuit designs of many other high performance applications impose a more stringent ?FET requirement (> 5 cm2/V.s). In order to achieve this landmark, in the second part of the research project, a simple and cost-effective deposition technique (floating-film transfer method) is presented, which allows supra-molecular alignment of 100% regioregular P3HT molecules. The application of aligned polymer films in FET devices leads to the demonstration of ?FET values as high as 8 cm2/V.s, which is the highest value reported so far for P3HT based OFETs. Keywords: Organic field-effect transistors, defect-free poly(3-hexylthiophene-2,5-diyl), regioregularity, cross-linked poly(vinyl alcohol), insulator/semiconductor interface, dipolar charge traps.

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Söderberg, Alexander. "Anomalous Dimensions in the WF O(N) Model with a Monodromy Line Defect." Thesis, Uppsala universitet, Teoretisk fysik, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-317546.

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General ideas in the conformal bootstrap program are covered. Both numerical and analytical approaches to the bootstrap equation are reviewed to show how it can be manipulated in different ways. Further analytical approaches are studied for theories with defects. We consider the three-dimensional CFT at the corresponding WF fixed point in the O(N) \phi^4 model with a co-dimension two, monodromy defect. Anomalous dimensions for bulk- and defect-local fields as well as one of the OPE coefficients are found to the first loop order. Implications of inserting this defect and constraints that arises from symmetries of the theory are investigated.

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Johnson, Jay Tillay. "Defect and thickness inspection system for cast thin films using machine vision and full-field transmission densitometry." Thesis, Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/37234.

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Quick mass production of homogeneous thin film material is required in paper, plastic, fabric, and thin film industries. Due to the high feed rates and small thicknesses, machine vision and other nondestructive evaluation techniques are used to ensure consistent, defect-free material by continuously assessing post-production quality. One of the fastest growing inspection areas is for 0.5-500 micrometer thick thin films, which are used for semiconductor wafers, amorphous photovoltaics, optical films, plastics, and organic and inorganic membranes. As a demonstration application, a prototype roll-feed imaging system has been designed to inspect high-temperature polymer electrolyte membrane (PEM), used for fuel cells, after being die cast onto a moving transparent substrate. The inspection system continuously detects thin film defects and classifies them with a neural network into categories of holes, bubbles, thinning, and gels, with a 1.2% false alarm rate, 7.1% escape rate, and classification accuracy of 96.1%. In slot die casting processes, defect types are indicative of a misbalance in the mass flow rate and web speed; so, based on the classified defects, the inspection system informs the operator of corrective adjustments to these manufacturing parameters. Thickness uniformity is also critical to membrane functionality, so a real-time, full-field transmission densitometer has been created to measure the bi-directional thickness profile of the semi-transparent PEM between 25-400 micrometers. The local thickness of the 75 mm x 100 mm imaged area is determined by converting the optical density of the sample to thickness with the Beer-Lambert law. The PEM extinction coefficient is determined to be 1.4 D/mm and the average thickness error is found to be 4.7%. Finally, the defect inspection and thickness profilometry systems are compiled into a specially-designed graphical user interface for intuitive real-time operation and visualization.

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Books on the topic "Field defect"

1

Saleeb, Atef F. Defect localization capabilities of a global detection scheme: Spatial pattern recognition using full-field vibration test data in plates. [Cleveland, Ohio]: National Aeronautics and Space Administration, Glenn Research Center, 2002.

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Skorkovská, Karolína, ed. Homonymous Visual Field Defects. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-52284-5.

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Edelen, Dominic G. B. Gauge theory and defects in solids. Amsterdam: North-Holland, 1988.

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Fleetwood, Daniel. Defects in microelectronic materials and devices. Boca Raton, FL: CRC Press, 2008.

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In the trenches at Petersburg: Field fortifications and Confederate defeat. Chapel Hill: University of North Carolina Press, 2009.

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Kleinert, Hagen. Gauge fields in condensed matter. Singapore: World Scientific, 1989.

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Gauge fields in condensed matter. Singapore: World Scientific, 1989.

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Kleinert, Hagen. Gauge fields in condensed matter. Singapore: World Scientific, 1989.

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Petr, Jizba, and Vitiello Giuseppe, eds. Quantum field theory and its macroscopic manifestations: Boson condensation, ordered patterns, and topological defects. New Jersey: Imperial College Press, 2011.

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Stockholm, Handelshögskolan i., ed. Transatlantic defence industry integration: Discourse and action in the organizational field of the defence market. Stockholm: Stockholm School of Economics, 2011.

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Book chapters on the topic "Field defect"

1

Wołczyński, Waldemar. "Concentration Micro-Field for Lamellar Eutectic Growth." In Defect and Diffusion Forum, 123–38. Stafa: Trans Tech Publications Ltd., 2008. http://dx.doi.org/10.4028/3-908451-54-x.123.

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Wierzba, Bartłomiej, Marek Danielewski, Renata Bachorczyk Nagy, and Maciej Pietrzyk. "The Stress Field in Cu-Fe-Ni Diffusion Couples." In Defect and Diffusion Forum, 47–54. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-41-8.47.

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Olemskoi, A. I., and A. V. Khomenko. "Field Theory of Crystal Defect Structure." In Thermodynamics, Microstructures and Plasticity, 363–74. Dordrecht: Springer Netherlands, 2003. http://dx.doi.org/10.1007/978-94-010-0219-6_23.

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Osinskaya, J. V., and A. V. Pokoev. "The Ageing of Beryllium Bronze in the Pulse Magnetic Field." In Defect and Diffusion Forum, 81–85. Stafa: Trans Tech Publications Ltd., 2008. http://dx.doi.org/10.4028/3-908451-55-8.81.

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Mishra, Mahim. "Scalable Defect Tolerance Beyond the SIA Roadmap." In Field Programmable Logic and Application, 1181–82. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-540-30117-2_169.

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Dłużewski, Paweł. "Nonlinear Field Theory of the Stress Induced Interdiffusion and Mass Transport." In Defect and Diffusion Forum, 63–70. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-41-8.63.

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Osinskaya, J. V., A. V. Pokoev, and N. S. Perov. "The Magneto-Plastic Effect at Beryllium Bronze after Aging in the Constant Magnetic Field." In Defect and Diffusion Forum, 111–14. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/3-908451-17-5.111.

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Yi, M., and B. X. Xu. "A real-space and constraint-free phase field model for the microstructure of ferromagnetic shape memory alloys." In Defect and Material Mechanics, 53–68. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-51632-5_5.

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Belova, Irina V., D. Samuelis, M. Martin, and Graeme E. Murch. "Cation Diffusion and Demixing in Yttria Stabilized Zirconia: Comparison of Assumptions of Constant Electric Field and Constant Current." In Defect and Diffusion Forum, 247–52. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/3-908451-36-1.247.

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Chadwick, A. V. "Defect Problems in the Field of Chemical Sensors." In Defects and Disorder in Crystalline and Amorphous Solids, 479–504. Dordrecht: Springer Netherlands, 1994. http://dx.doi.org/10.1007/978-94-011-1942-9_22.

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Conference papers on the topic "Field defect"

1

Roa Aguirre, Alexis, Jose Francisco Gomes, Leandro Hayato Ymai, and Abraham Hirsz Zimerman. "Thirring Model with Jump Defect." In 5th International School on Field Theory and Gravitation. Trieste, Italy: Sissa Medialab, 2009. http://dx.doi.org/10.22323/1.081.0031.

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Maidee, Pongstorn, and Kia Bazargan. "Defect-Tolerant FPGA Architecture Exploration." In 2006 International Conference on Field Programmable Logic and Applications. IEEE, 2006. http://dx.doi.org/10.1109/fpl.2006.311253.

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Wang, Gang, Wenrui Gong, and Ryan Kastner. "Defect-Tolerant Nanocomputing Using Bloom Filters." In 2006 14th Annual IEEE Symposium on Field-Programmable Custom Computing Machines. IEEE, 2006. http://dx.doi.org/10.1109/fccm.2006.35.

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Marinova, I., V. Mateev, H. Endo, S. Hayano, and Y. Saito. "3D field reconstruction for nondestructive defect detection." In INTERMAG Asia 2005: Digest of the IEEE International Magnetics Conference. IEEE, 2005. http://dx.doi.org/10.1109/intmag.2005.1463909.

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Gokhale, Swapna, and Robert Mullen. "Queuing Models for Field Defect Resolution Process." In 2006 17th International Symposium on Software Reliability Engineering. IEEE, 2006. http://dx.doi.org/10.1109/issre.2006.38.

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Zhang, Z. P., W. Q. Chen, Y. F. Li, and Jun Chen. "Defect-assisted field emission from ZnO nanotrees." In 2014 27th International Vacuum Nanoelectronics Conference (IVNC). IEEE, 2014. http://dx.doi.org/10.1109/ivnc.2014.6894768.

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Kumari, Anita, Javier F. Pulecio, and Sanjukta Bhanja. "Defect characterization in magnetic field coupled arrays." In 2009 10th International Symposium on Quality of Electronic Design (ISQED). IEEE, 2009. http://dx.doi.org/10.1109/isqed.2009.4810334.

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Juschkin, L., A. Maryasov, S. Herbert, A. Aretz, K. Bergmann, R. Lebert, Ian McNulty, Catherine Eyberger, and Barry Lai. "EUV Dark-Field Microscopy for Defect Inspection." In THE 10TH INTERNATIONAL CONFERENCE ON X-RAY MICROSCOPY. AIP, 2011. http://dx.doi.org/10.1063/1.3625355.

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Dai, Guang, Wei Li, Zhijun Yang, and Yali Wang. "Research on Quantitative Method and 3D Finite Element Analysis of Tank Bottom Corrosion Defect Leakage Magnetic Field." In ASME 2011 Pressure Vessels and Piping Conference. ASMEDC, 2011. http://dx.doi.org/10.1115/pvp2011-57288.

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According to the principle of magnetic flux leakage testing and the finite element numerical simulation, 3D finite element model (FEM) for MFL testing of tank bottom was established. Through simulative analysis, influence law between defect size and defect magnetic flux leakage field and the relationship curve of defect leakage magnetic field change with its size was obtained. The result showed that: When the length vary with sequence, the peak valley length of defects leakage magnetic signal increase with the increase of defect length, the relationship curve between each other is approximate linear; When the depth vary with sequence, the relationship between peak valley height of defects leakage magnetic signal and defect depth is also approximate linear, but this relationship was different with different length; When the width vary with sequence, on the defect symmetry plane, the peak of magnetic flux density along the width direction corresponded with the defect edge, and the length of the two peaks were equal to the width of the defect. According to simulation data and theory of regression analysis linear regression equation and relation surface between defect length depth and the characteristic quantity of its signal was established, quantitative method of defects signal was also proposed. Then experimental study was carried out in the Laboratory, the result show that the quantitative size was consistent with the actual defect size.

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Ellinger, Matthew A., Thomas A. Bubenik, and Pamela J. Moreno. "ILI-to-Field Data Comparisons: What Accuracy Can You Expect?" In 2016 11th International Pipeline Conference. American Society of Mechanical Engineers, 2016. http://dx.doi.org/10.1115/ipc2016-64526.

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Det Norske Veritas (U.S.A.), Inc. (DNV GL) prepared this paper in order to study the expected accuracy of in-line inspections (ILI) as a function of year, depth (both reported and field measured), and length, amongst other factors. DNV GL has access to a significant amount of data that span many different pipeline operators, ILI vendors, inspection years, and inspection technologies. DNV GL is well suited to complete this study as a result of our access to these various data sets. Over 3,000 individual comparisons of ILI and field depths and lengths spanning from 2010 through 2015 from 11 operators and 68 line segments were compiled to meet the objectives of this paper. Inspection technologies include axial magnetic flux leakage (MFL), ultrasonic wall thickness (UTWT), spiral MFL, and circumferential MFL. Based on the analyses conducted in this paper, the following conclusions were generated. • Axial MFL and UTWT inspections show significant improvements over the last several years. • Axial MFL inspection systems are capable of meeting a depth accuracy of +/−10% of the wall thickness with 80% certainty, but this has not always been the case. UTWT inspection systems are capable of meeting a higher depth accuracy. • Axial MFL inspection systems report more pits and circumferential grooves than UTWT systems. This could suggest UTWT systems are less sensitive to pits and circumferential grooves than axial MFL systems. • Both axial MFL and UTWT inspection systems routinely under call defects with field measured depths greater than 50 to 80% of the wall thickness. This is contrary to a widely held notion that ILI is conservative for deep defects. • ILI reported defect lengths do not correlate well to field measured defect lengths. In general, field measured defect lengths are greater than ILI reported defect lengths. • Depth accuracy tends to decrease slightly for very short defects (less than 1-inch) and for very long defects (greater than 40-inches). Based on these conclusions, the authors make the following recommendations: • Pipeline operators should dig more than the deepest reported defects to better understand the accuracy of the inspection tools being used and to determine whether deeper anomalies are being under called. • Pipeline operators should consider methods for evaluating change in corrosion depth from ILI survey to ILI survey to lessen the dependence on the accuracy of the ILI tools. This should include a raw data signal analysis in order to determine whether the general morphology (metal loss length and width) are changing between ILI surveys. • ILI reported defect lengths should be used in conjunction with field measured defect depths (if available) when performing failure pressure calculations. • Additional accuracy, especially for deeper defects, may only come with new tool developments. Industry support of such developments will be required to bring them to fruition.

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Reports on the topic "Field defect"

1

Murray, A. B. Temporal Evolution of Ripple-Field Characteristics: A Defect-Dynamic Approach. Fort Belvoir, VA: Defense Technical Information Center, September 2005. http://dx.doi.org/10.21236/ada610260.

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Murray, A. B. Temporal Evolution of Ripple-Field Characteristics: A Defect-Dynamic Approach. Fort Belvoir, VA: Defense Technical Information Center, September 2005. http://dx.doi.org/10.21236/ada572568.

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Yan, M., J. McWhirter, T. Huser, and W. Siekhaus. Defect studies of optical materials using near-field scanning optical microscopy and spectroscopy. Office of Scientific and Technical Information (OSTI), January 2001. http://dx.doi.org/10.2172/15004114.

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Yan, M., S. Oberhelman, L. Wang, W. Siekhaus, and M. Kozlowski. Characterization of surface and sub-surface defects in optical materials using the near field evanescent wave. Office of Scientific and Technical Information (OSTI), December 1998. http://dx.doi.org/10.2172/334222.

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Boesten, Jan. Violence and Democracy in Colombia The Conviviality of Citizenship Defects in Colombia’s Nation-State. Maria Sibylla Merian International Centre for Advanced Studies in the Humanities and Social Sciences Conviviality-Inequality in Latin America, 2021. http://dx.doi.org/10.46877/boesten.2021.33.

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This essay aims to utilize the concept of conviviality for connecting the coexistence of seemingly contradictory phenomena in Colombia. It argues that while conviviality implies a normative content – a society in which members do not slaughter each other is better than one in which members resort to violence – the meekness of that normative claim suggests that it is better used as an analytical tool that seeks to connect the contradictions that coexist in the real lifeworld. Colombia’s history of violence and democracy is such a contradictory case. Comparativists have situated Colombia’s deficits on the “extra-institutional playing field”, lamenting that it is a “besieged” or “threatened democracy”. Conviviality helps us to specify these “extra-institutional” defects by suggesting impediments exogenous and endogenous to the state-building logic of the Colombian nation-state.

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Fullerton, Don. Inputs to Tax Policymaking: The Supply Side, the Deficit, and the Level Playing Field. Cambridge, MA: National Bureau of Economic Research, November 1990. http://dx.doi.org/10.3386/w3507.

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