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Relevant bibliographies by topics / Ferromagnetic Quantum Dots

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Academic literature on the topic 'Ferromagnetic Quantum Dots'

Author: Grafiati

Published: 7 September 2023

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Journal articles on the topic "Ferromagnetic Quantum Dots"

1

GAO, PAN, SUHANG LIU, LIN TIAN, and TIANXING MA. "QUANTUM MONTE CARLO STUDY OF MAGNETIC CORRELATION IN GRAPHENE NANORIBBONS AND QUANTUM DOTS." Modern Physics Letters B 27, no. 21 (2013): 1330016. http://dx.doi.org/10.1142/s0217984913300160.

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To realize the application of spintronics, possible magnetism in graphene-based material is an important issue to be addressed. At the tight banding level of armchair graphene nanoribbons, there are two flat bands in the band structure, two Van Hove singularities in the density of states, and the introducing of the next-nearest-neighbor hopping term cause high asymmetry in them, which plays a key role in the behavior of magnetic correlation. We further our studies within determinant quantum Monte Carlo simulation to treat the electron–electron interaction. It is found that the armchair graphene nanoribbons show carrier mediated magnetic correlation. In the armchair graphene nanoribbons, the antiferromagnetic correlation dominates around half filling, while the ferromagnetic correlation dominates as electron filling is lower than 0.8. Moreover, the ferromagnetic correlation is strengthened markedly as the next-nearest-neighbor hopping energy increases. The resultant manipulation of ferromagnetism in graphene-based material may facilitate the development of spintronics.

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2

Omariy, Aiman Al, and Reim Almotiriz y. "QUANTUM DOTS IN FERROMAGNETIC HEISENBERG MODEL." EPH - International Journal of Applied Science 2, no. 4 (2016): 1–5. http://dx.doi.org/10.53555/eijas.v2i4.24.

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Quantum Dots (QDs) are semiconductor-nanostructure materials which are also called arti cial atoms. QDs are classi ed as ferromagnetic material. Theoretically, Heisenberg model is regarded as a good model in describing these QDs. We applied Spin Wave Theory (SWT) on the above mentioned model to explore the physical properties of these materials, such as ground state energy, excitation energy and magnetization. We found that the ground state energy "g increased with the applied external magnetic eld B as B0:3. A phase transition was also observed around B~1T, which indicate a transition from singlet to a triplet state. Staggered magnetization reaches saturation around this point of transition.

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3

Ma, Xi Ying. "Fabrication of Ferromagnetic Ge Quantum Dots Material." Advanced Materials Research 531 (June 2012): 71–74. http://dx.doi.org/10.4028/www.scientific.net/amr.531.71.

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GeMn magnetic quantum dots (QDs) material were grown with a GeH4/Ar mixed gas under a constant flowing at 400°C by means of plasma enhanced chemical vapor deposition (PECVD) process, then doped with Mn doped using magnetic sputtering technique and annealed at 600 C. The QDs with a Ge0.88Mn0.12 structure derived from the energy spectrum show a wide opening hysteresis loops with a large remnant magnetizations Mr are 0.1410-4 and 0.2510-4 emu/g for the as grown and the annealed samples. Moreover, the magnetic QDs show high quality voltage-current (I-V) and voltage-capacitance (C-V) properties. The magnetic GeMn QDs can be used to fabrication electromagnetic devices.

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4

Xiu, Faxian. "Magnetic Mn-Doped Ge Nanostructures." ISRN Condensed Matter Physics 2012 (May 7, 2012): 1–25. http://dx.doi.org/10.5402/2012/198590.

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With the seemly limit of scaling on CMOS microelectronics fast approaching, spintronics has received enormous attention as it promises next-generation nanometric magnetoelectronic devices; particularly, the electric field control of ferromagnetic transition in dilute magnetic semiconductor (DMS) systems offers the magnetoelectronic devices a potential for low power consumption and low variability. Special attention has been given to technologically important group IV semiconductor based DMSs, with a prominent position for Mn doped Ge. In this paper, we will first review the current theoretical understanding on the ferromagnetism in MnxGe1−x DMS, pointing out the possible physics models underlying the complicated ferromagnetic behavior of MnxGe1−x. Then we carry out detailed analysis of MnxGe1−x thin films and nanostructures grown by molecular beam epitaxy. We show that with zero and one dimension quantum structures, superior magnetic properties of MnxGe1−x compared with bulk films can be obtained. More importantly, with MnxGe1−x nanostructures, such as quantum dots, we demonstrate a field controlled ferromagnetism up to 100 K. Finally we provide a prospective of the future development of ferromagnetic field effect transistors and magnetic tunneling junctions/memories using dilute and metallic MnxGe1−x dots, respectively. We also point out the bottleneck problems in these fields and rendering possible solutions to realize practical spintronic devices.

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5

MA, QIONG, TAO TU, LI WANG, et al. "SUBSTRATE MODULATED GRAPHENE QUANTUM DOTS." Modern Physics Letters B 26, no. 25 (2012): 1250162. http://dx.doi.org/10.1142/s021798491250162x.

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We propose a method to use gapped graphene as barriers to confine electrons in gapless graphene and form a good quantum dot, which can be realized on an oxygen-terminated SiO 2 substrate partly hydrogen-passivated. In particular, we use deposited ferromagnetic insulators as contacts which give rise to spin-dependent energy spectrum and transport properties. Furthermore, we upgrade this method to form two-dimensional quantum dot arrays, whose coupling strength between neighboring dots can be uniquely anisotropic. Compared to complexity of other approaches to form quantum dot in graphene, the setup suggested here is a promising candidate for practical applications.

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6

Xiu, Faxian, Igor V. Ovchinnikov, Pramey Upadhyaya, et al. "Voltage-controlled ferromagnetic order in MnGe quantum dots." Nanotechnology 21, no. 37 (2010): 375606. http://dx.doi.org/10.1088/0957-4484/21/37/375606.

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7

Ramlan, Dinna G., Steven J. May, Jian-Guo Zheng, Jonathan E. Allen, Bruce W. Wessels, and Lincoln J. Lauhon. "Ferromagnetic Self-Assembled Quantum Dots on Semiconductor Nanowires." Nano Letters 6, no. 1 (2006): 50–54. http://dx.doi.org/10.1021/nl0519276.

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8

Yang, J. Y., K. S. Yoon, Y. H. Do, et al. "Ferromagnetic quantum dots formed by external laser irradiation." Journal of Applied Physics 93, no. 10 (2003): 8766–68. http://dx.doi.org/10.1063/1.1558600.

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9

Yan, Wensheng, Qinghua Liu, Chao Wang, et al. "Realizing Ferromagnetic Coupling in Diluted Magnetic Semiconductor Quantum Dots." Journal of the American Chemical Society 136, no. 3 (2014): 1150–55. http://dx.doi.org/10.1021/ja411900w.

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10

Martinek, J., Y. Utsumi, H. Imamura, J. Barnaś, S. Maekawa, and G. Schön. "Kondo effect in quantum dots coupled to ferromagnetic electrodes." Physica E: Low-dimensional Systems and Nanostructures 18, no. 1-3 (2003): 75–76. http://dx.doi.org/10.1016/s1386-9477(02)00980-3.

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