Dissertations / Theses on the topic 'Ferromagnetic Heusler alloys'

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1

Bargawi, Ahmad Yousef. "A study of the martensitic phase transition in the shape memory alloy Ni₂MnGa." Thesis, Loughborough University, 1998. https://dspace.lboro.ac.uk/2134/32824.

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A study of the martensitic phase transition in the shape memory alloy Ni2MnGa has been carried out. Ni2MnGa is one of the group of "shape memory effect" alloys which are currently exciting considerable interest. The origin of this effect in the compound is in the phase change which takes place on cooling through T = 200 K from the cubic L21 Heusler structure to a tetragonal phase. Recently the results of band structure calculations have been used to conclude that in Ni2MnGa the structural phase transition is driven by a band Jahn-Teller distortion.
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2

Khan, Mahmud. "Magnetic entropy changes and exchange bias effects associated with phase transitions in ferromagnetic Heusler alloys /." Available to subscribers only, 2007. http://proquest.umi.com/pqdweb?did=1456294961&sid=5&Fmt=2&clientId=1509&RQT=309&VName=PQD.

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3

Gaucher, Samuel. "Growth of lattice-matched hybrid semiconductor-ferromagnetic trilayers using solid-phase epitaxy." Doctoral thesis, Humboldt-Universität zu Berlin, 2021. http://dx.doi.org/10.18452/22599.

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Diese Arbeit befasst sich mit dem Wachstum von Dünnschichtstrukturen, die zur Herstellung eines Spin-selektiven Schottky-Barrier-Tunneltransistors (SS-SBTT) erforderlich sind. Das Bauelement basiert auf dem Transport von Ladungsträgern durch eine dünne halbleitende (SC) Schicht, die zwei ferromagnetische (FM) Kontakte trennt. Daher müssen hochqualitative und gitterangepasste vertikale FM/SC/FM-Trilayer gezüchtet werden, was aufgrund der inkompatiblen Kristallisationsenergien zwischen SC und Metallen eine experimentelle Herausforderung darstellt. Das Problem wurde mit einem Festphasenepitaxie-Ansatz gelöst, bei dem eine dünne amorphe Ge-Schicht (4-8 nm) durch Ausglühen über Fe3Si auf GaAs(001)-Substraten kristallisiert wird. Langsame Glühgeschwindigkeiten bis zu einer Temperatur von 260°C konnten ein neues gitterangepasstes Polymorph von FeGe2 erzeugen, über das ein zweites Fe3Si mittels Molekularstrahlepitaxie gezüchtet werden könnte. SQUID-Magnetometermessungen zeigen, dass die dreischichtigen Proben in antiparallele Magnetisierungszustände versetzt werden können. Vertikale Spin-Ventil-Bauelemente, die mit verschiedenen Trilayern hergestellt wurden, wurden verwendet, um zu demonstrieren, dass der Ladungstransport über die Heteroübergänge spinselektiv ist und bei Raumtemperatur einen Magnetowiderstand von höchstens 0,3% aufweist. Der Effekt nimmt bei niedrigen Temperaturen ab, was mit einem ferromagnetischen Übergang in der FeGe2-Schicht korreliert. Durch TEM- und XRD-Experimente konnte festgestellt werden, dass das neue FeGe2-Polymorph die Raumgruppe P4mm aufweist und bis zu 17% Si-Atome als Ersatz für Ge-Stellen enthält. Die Isolierung von FeGe2 war möglich, indem das Verhältnis von Fe-, Si- und Ge-Atomen so eingestellt wurde, dass die richtige Stöchiometrie bei vollständiger Durchmischung erreicht wurde. Anhand von FeGe2-Dünnschichten wurde ein zunehmender spezifischer Widerstand bei niedriger Temperatur und ein semi-metallischer Charakter beobachtet.
This thesis discusses the growth of thin film structures required to fabricate a Spin-Selective Schottky Barrier Tunnel transistor (SS-SBTT). The device relies on charge carriers being transported through a thin semiconducting (SC) layer separating two ferromagnetic (FM) contacts. Thus, high quality and lattice-matched FM/SC/FM vertical trilayers must be grown, which is experimentally challenging due to incompatible crystallization energies between SC and metals. The problem was solved using a solid-phase epitaxy approach, whereby a thin amorphous layer of Ge (4-8 nm) is crystallized by annealing over Fe3Si on GaAs(001) substrates. Slow annealing rates up to a temperature of 260°C could produce a lattice-matched Ge-rich compound, over which a second Fe3Si could be grown my molecular-beam epitaxy. The compound obtained during annealing is a new layered polymorph of FeGe2. SQUID magnetometry measurements indicate that the trilayer samples can be placed in states of antiparallel magnetization. Vertical spin valve devices created using various trilayers were used to demonstrate that charge transport is spin-selective across the heterojunctions, showing a magnetoresistance of at most 0.3% at room temperature. The effect decreases at low temperature, correlating with a ferromagnetic transition in the FeGe2 layer. TEM and XRD experiments could determine that the new FeGe2 polymorph has a space group P4mm, containing up to 17% Si atoms substituting Ge sites. Isolating FeGe2 was possible by tuning the proportion Fe, Si and Ge atoms required to obtain the right stoichiometry upon full intermixing. Hall bars fabricated on FeGe2 thin films were used to observe an increasing resistivity at low temperature and semimetallic character.
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4

Dannenberg, Antje [Verfasser], Peter [Akademischer Betreuer] Entel, and Jörg [Akademischer Betreuer] Neugebauer. "Ab initio and Monte Carlo investigations of structural, electronic and magnetic properties of new ferromagnetic Heusler alloys with high Curie temperatures / Antje Dannenberg. Gutachter: Peter Entel ; Jörg Neugebauer." Duisburg, 2011. http://d-nb.info/1016614985/34.

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5

Singh, Laura Jane. "Co₂MnSi Heusler alloy thin films." Thesis, University of Cambridge, 2005. https://www.repository.cam.ac.uk/handle/1810/34601.

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This thesis investigates the growth of intermetallic compounds by co-sputtering from single elemental targets. The preliminary work involved constructing a sputtering set-up to grow abinary alloy (Sm-Co) and investigating how to control the composition spread that was obtained. Having achieved this, a larger sputtering flange was built up to grow the ternary Heusler alloy, Co₂MnSi. Co₂MnSi has been predicted to be a half-metallic ferromagnet, which means that there is an energy gap in the minority spin band at the Fermi energy. This leads to 100% spin polarised conduction electrons, which would enable ideal spin-device performance to be obtained. Co₂MnSi is particularly promising because it is predicted to have a large energy gap in the minority band of ~0.4 eV and has the highest Curie temperature among the known Heuslers of 985 K. Initially, Co₂MnSi was grown on a-plane sapphire and stoichiometric films were single phase and highly (110) textured, without the use of a seed layer. They exhibited the bulk value of the saturation magnetisation, Ms and films grown at the highest deposition temperature (715 K) showed the lowest resistivity (47 μΩcm at 4.2 K) and the lowest room temperature coercivity (18 Oe). The spin polarisation of the transport current, Pt of a 400 nm film grown at this deposition temperature was 54%, consistent with measurements on bulk single crystals. Ms decreased with decreasing film thickness indicating a graded disorder. By growing on GaAs (001), which has a similar lattice parameter to Co₂MnSi it was expected that this disordered region would be confined to the first few atomic layers. However, this was not the case because interfacial reactions resulted in the formation of an epitaxial Mn-As region, and a thin interfacial layer that was Co-Ga rich. This prevented the lattice matching of the Co₂MnSi to the GaAs(001) hence hindering epitaxial growth of the Heusler. The reaction zone also meant that films exhibited a Ms slightly below the bulk value. The expected fourfold anisotropy was not obtained for this cubic material, which is most likely due to the anisotropy of the reconstructed GaAs surface. Inspite of this anomalous behaviour, Pt was 55%, similar to the result obtained on sapphire, indicating that either Pt is independent of orientation or that the Heusler surface reconstructs in the same way. Films showed some improved properties to films grown on a-plane sapphire, indicating the potential of growing on this technologically important substrate. With this in mind, pseudo spin valves involving Co₂MnSi as one of the ferromagnetic electrodes were fabricated in both the CIP and CPP configurations. Clear low-field spin-valve contributions were observed at 15 K but the MR values are much lower than that expected from a PSV with a predicted 100% spin polarised electrode.
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6

Parsons, Mark James. "An investigation of the thermal properties of some strongly correlated electron systems." Thesis, Loughborough University, 1998. https://dspace.lboro.ac.uk/2134/27183.

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The correlated electron systems which are the subject of this thesis are the strong electron–phonon coupling superconductor HfV2, and the localised moment magnetic systems of the alloy series Pd2REIn (RE = Gd, Tb, Ho, Er and Yb).
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7

Muduli, Pranaba Kishor. "Ferromagnetic thin films of Fe and Fe 3 Si on low-symmetric GaAs(113)A substrates." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 2006. http://dx.doi.org/10.18452/15473.

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In dieser Arbeit werden das Wachstum mittels Molekularstrahlepitaxie und die Eigenschaften der Ferromagneten Fe und Fe_3Si auf niedrig-symmetirschen GaAs(113)A-Substraten studiert. Drei wichtige Aspekte werden untersucht: (i) Wachstum und strukturelle Charakterisierung, (ii) magnetische Eigenschaften und (iii) Magnetotransporteigenschaften der Fe und Fe_3Si Schichten auf GaAs(113)A-Substraten. Das Wachstum der Fe- und Fe_3Si-Schichten wurde bei einer Wachstumstemperatur von = bzw. 250 °C optimiert. Bei diesen Wachstumstemperaturen zeigen die Schichten eine hohe Kristallperfektion und glatte Grenz- und Oberflächen analog zu [001]-orientierten Schichten. Weiterhin wurde die Stabilität der Fe_(3+x)Si_(1-x) Phase über einen weiten Kompositionsbereich innerhalb der Fe_3Si-Stoichiometry demonstriert. Die Abhängigkeit der magnetischen Anisotropie innerhalb der Schichtebene von der Schichtdicke weist zwei Bereiche auf: einen Beresich mit dominanter uniaxialer Anisotropie für Fe-Schichten = 70 MLs. Weiterhin wird eine magnetische Anisotropie senkrecht zur Schichtebene in sehr dünnen Schichten gefunden. Der Grenzflächenbeitrag sowohl der uniaxialen als auch der senkrechten Anisotropiekonstanten, die aus der Dickenabhängigkeit bestimmt wurden, sind unabhängig von der [113]-Orientierung und eine inhärente Eigenschaft der Fe/GaAs-Grenzfläche. Die anisotrope Bindungskonfiguration zwischen den Fe und den As- oder Ga-Atomen an der Grenzfläche wird als Ursache für die uniaxiale magnetische Anisotropie betrachtet. Die magnetische Anisotropie der Fe_3Si-Schichten auf GaAs(113)A-Substraten zeigt ein komplexe Abhängigkeit von der Wachstumsbedingungen und der Komposition der Schichten. In den Magnetotransportuntersuchungen tritt sowohl in Fe(113)- als auch in Fe_3Si(113)-Schichten eine antisymmetrische Komponente (ASC) im planaren Hall-Effekt (PHE) auf. Ein phänomenologisches Modell, dass auf der Kristallsymmetrie basiert, liefert ein gute Beschreibung sowohl der ASC im PHE als auch des symmetrischen, anisotropen Magnetowiderstandes. Das Modell zeigt, dass die beobachtete ASC als Hall-Effekt zweiter Ordnung beschreiben werden kann.
In this work, the molecular-beam epitaxial growth and properties of ferromagnets, namely Fe and Fe_3Si are studied on low-symmetric GaAs(113)A substrates. Three important aspects are investigated: (i) growth and structural characterization, (ii) magnetic properties, and (iii) magnetotransport properties of Fe and Fe_3Si films on GaAs(113)A substrates. The growth of Fe and Fe_3Si films is optimized at growth temperatures of 0 and 250 degree Celsius, respectively, where the layers exhibit high crystal quality and a smooth interface/surface similar to the [001]-oriented films. The stability of Fe_(3+x)Si_(1-x) phase over a range of composition around the Fe_3Si stoichiometry is also demonstrated. The evolution of the in-plane magnetic anisotropy with film thickness exhibits two regions: a uniaxial magnetic anisotropy (UMA) for Fe film thicknesses = 70 MLs. The existence of an out-of-plane perpendicular magnetic anisotropy is also detected in ultrathin Fe films. The interfacial contribution of both the uniaxial and the perpendicular anisotropy constants, derived from the thickness-dependent study, are found to be independent of the [113] orientation and are hence an inherent property of the Fe/GaAs interface. The origin of the UMA is attributed to anisotropic bonding between Fe and As or Ga at the interface, similarly to Fe/GaAs(001). The magnetic anisotropy in Fe_3Si on GaAs(113)A exhibits a complex dependence on the growth conditions and composition. Magnetotransport measurements of both Fe(113) and Fe_3Si(113) films shows the striking appearance of an antisymmetric component (ASC) in the planar Hall effect (PHE). A phenomenological model based on the symmetry of the crystal provides a good explanation to both the ASC in the PHE as well as the symmetric anisotropic magnetoresistance. The model shows that the observed ASC component can be ascribed to a second-order Hall effect.
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8

Topbasi, Cem. "Theoretical And Experimental Investigations On Atomic And Magnetic Ordering In Full Heusler Alloys." Master's thesis, METU, 2008. http://etd.lib.metu.edu.tr/upload/3/12609640/index.pdf.

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The aim of the study, which was carried out in two main parts, was to investigate the atomic and magnetic ordering in various full Heusler alloy systems.In the theoretical part of the thesis, investigations based on the statiscothermodynamical theory of ordering by means of Bragg-Williams-Gorsky (BWG) method combined with electronic theory in the pseudopotential approximation have been conducted to model order-order (L21&
#8596
B2) and order-disorder (B2&
#8596
A2) phase transformations in Ni-Mn-C (C=Ga, In, Sb) and A2BGa (A=Fe, Ni, Co
B=Ni, Mn, Co, Fe) Heusler alloys. The partial ordering energies, calculated according to the electronic theory of alloys in pseudopotential approximation for the first two coordination spheres were utilized as input data for the theoretical superlattice formation models based on BWG approximation. Furthermore, the trends of L21&
#8596
B2 transition temperatures with electron concentration at A, B and C atomic sites were determined. In the experimental part of the thesis, structural and magnetic properties of Ni-Mn-Ga and Ni-Mn-Al Heusler alloys were investigated. For the Ni-Mn-Ga Heusler alloy system, it was found that the martensitic (TM) and Curie temperatures (TC) merge for Ni54Mn20Ga26 and Ni56Mn18Ga26 alloys by compositional tuning. For the Ni-Mn-Al Heusler alloy system, it was found that ferromagnetism was introduced into these alloys by low temperature aging, as a result of the stabilization of the L21 phase. In addition to that, magnetocaloric effect (MCE) was determined in the vicinity of the first order magneto-structural transition for Ni-rich Ni-Mn-Ga alloys and near the second order magnetic transition for the Ni2MnAl alloy.
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9

PENDL, JUNIOR WILLI. "Estudo do campo hiperfino magnetico no sup181Ta no sitio Y das ligas de Heusler Cosub2 YAI (Y=Ta, Cr) e Cosub2 Ysup1sup1sub1-xYsup2subxZ (Y=Ti,V,Nb,Cr e Z=Al,Sn)." reponame:Repositório Institucional do IPEN, 1996. http://repositorio.ipen.br:8080/xmlui/handle/123456789/10444.

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Tese (Doutoramento)
IPEN/T
Instituto de Pesquisas Energeticas e Nucleares - IPEN/CNEN-SP
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10

KOUACOU, ABAKA MICHEL. "Apparition du ferromagnetisme itinerant dans des composes de type heusler. Relation avec des transitions isolant-metal." Université Joseph Fourier (Grenoble), 1996. http://www.theses.fr/1996GRE10087.

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L'etude des proprietes magnetiques et de transport de differentes series de solutions solides autour des alliages d'heusler tico#2sn et demi-heusler ticosn montre des caracteristiques classiques du ferromagnetisme itinerant. Dans la serie tico#2sn-tini#2sn, la densite locale est fortement reduite et le critere de stoner n'est plus maintenu pour tini#2sn. Le ferromagnetisme disparait au profit d'un etat paramagnetique de pauli. Vers la limite magnetique-non magnetique, la resistivite et la chaleur specifique montrent de fortes fluctuations de spin. Dans la serie tico#xsn avec 1
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11

Riegler, Andreas [Verfasser], and Laurens Wigbolt [Akademischer Betreuer] Molenkamp. "Ferromagnetic resonance study of the Half-Heusler alloy NiMnSb : The benefit of using NiMnSb as a ferromagnetic layer in pseudo-spin-valve based spin-torque oscillators / Andreas Riegler. Betreuer: Laurens Wigbolt Molenkamp." Würzburg : Universitätsbibliothek der Universität Würzburg, 2011. http://d-nb.info/101816328X/34.

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12

Page, Michael Roy. "Interactions between spin transport and dynamics studied using spatially resolved imaging and magnetic resonance." The Ohio State University, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=osu1480592093876192.

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13

SHIH, CHIH-WEI, and 石至為. "Magnetic Phase Evolution and Properties of Ferromagnetic Shape Memory Heusler Alloys." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/cf9dn5.

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博士
國立中正大學
物理系研究所
104
The effects of lattice constant and valence electron concentration e/a (electrons per atom) on the magnetocaloric effects of Ni–Mn-Sn Heusler alloys are invetigated. At first, the effect of Ge substitution for Sn on phase evolution and magnetocaloric effects (MCEs) of Ni48Mn39Sn13-xGex (x=0-3) and Mn49Ni41Sn10-xGex (x=0-2) ribbons has been studied. When Mn content is over 45 at%, the Ge atoms prefer to form a Mn-rich phase with Mn atoms. This Mn-rich phase might suppress the martensitic transition of the alloy ribbons, resulting in the decrease of maximal magnetic entropy change, ΔSMmax. Secondly, for Co-substituted Mn49-xCoxNi41Sn10 (x=0-4) ribbons, the ferromagnetic behavior of austenite is improved with incresing Co content originated from the enhancement of ferromagnetic exchange interaction. For these series samples, an average ΔSMmax value of 12.5 J/kg·K is easily obtained in different operation temperature region. On the other hand, the Fe-Mn based ferromagnetic shape memory alloys (FSMAs) is also an interesting functional material to study. In order to observe the relationship of exchange bias (EB) effect with phase composition, tunning the composition of Fe-Mn-Ga ternary alloy is nessessary. For Fe50Mn25Ga25 ribbon, the results showed that if its FCC phase undergoes field cooling, giant EB properties could be observed. The HEB=2.5 kOe and iHc=11 kOe were obtained at 5 K. Furthermore, if the content of Fe atoms is over 50 at% and Mn atoms lower than 25 at%, ribbons are perfer to form a B2 phase. In contrast, if Mn content is higher than 25at%, the ribbons are perfer to form a pure L12 phase (FCC). Next, the effect of Ni substitution for Fe on the crystal structure, magnetic state and magnetocaloric effect of the Fe-Ni-Mn-Ga Heusler alloy ribbons is also presented. Results show that with the increase of Ni content, the phase changed from FCC structure into B2 structure. An average ΔSMmax value is 1.5 Jkg/K in these samples. A relatively broader temperature range at the half maximum of ΔS¬M peak (~90 K), low-cost and nontoxic elements make Fe-Ni-Mn-Ga-based ribbons the promising candidates for magnetic refrigeration applications close to room temperature. Keywords: Heusler alloys, Magnetic refrigerant materials, Magnetocaloric effect and Exchange bias.
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14

Ahamed, Khan Riaz Ahamed. "Powder metallurgy synthesis of ferromagnetic Heusler alloys: Feasibility and microstructural characterization studies." Thesis, 2019. http://hdl.handle.net/2440/123416.

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Ni-Mn-X (X – Ga, Sn, In, Sb) based ferromagnetic Heusler alloys are deemed to be multiferroic materials with the multiferroicity realized by engineering reversibility through composition tuning, of an inherent first-order diffusionless martensitic phase transformation and a second-order magnetic transition accompanying the first with the application of an electromagnetic field. Martensitic phase transformation transforms high-temperature austenite phase to low-temperature martensite phase while magnetic transition changes the electromagnetic ordering in the phases. The engineered reversibility of the magnetostructural transformations is brought with remarkable functional changes such as change in entropy, saturation magnetization, strain recovery, etc. that offer great scope for applications. There are examples in literature of such alloys with great potential for magnetic refrigeration by virtue of a giant entropy change, or with potential for magnetic shape memory effect because of giant magnetic field-induced strains. However, the most interesting characteristics of these alloys is their ability in the conversion of waste heat into electricity on account of the sudden thermally induced surge in saturation magnetization around the phase transformation, suitably utilized to generate electricity. A majority of these ferromagnetic Heusler alloys have been synthesised by liquid processing method of arc/induction-melting of high purity elements in a controlled environment usually followed by annealing. Synthesis procedures which are a sequel to arc/induction melting such as rapid solidification by melt-spinning, directional solidification etc. are also prevalent. Solid processing through powder metallurgy is sparsely employed on pre-alloyed powders of these alloys and not elemental powders even though use of elemental powders is advantageous for reasons such as good compaction characteristics and ease of obtaining new alloy compositions through precise control of stoichiometry. Ferromagnetic Heusler alloys of compositions discussed herein are meant to transform martensitically and vice versa, irrespective of the way they are synthesized. Do these alloys necessarily have to be synthesized through liquid processing? The question is broader in concept and the lack of literature on solid processed ferromagnetic shape memory Heusler alloys provided scope for investigation of the feasibility of adopting conventional pressure-less sintering process as a cost-effective alternative to casting. This research therefore endeavoured to explore the feasibility of solid processing of ferromagnetic Heusler alloys through conventional sintering using elemental powders. The starting composition was Ni45Co5Mn40Sn10. The choice of composition was the singular magnetostructural behaviour at phase transformation of the cast composition that drove its potential as an energy material similar to or even better than thermoelectric materials. Two sets of alloys were prepared – a quinary Ni45Co5Mn40(Sn,Cu)10 and quaternary Ni45Co5Mn40Sn10 using the conventional press and sinter procedure. The quinary compacts were prepared at a compaction load of 70 KN (184 MPa) and sintered at two different temperatures of 950°C and 1050°C for 24 h in order to first study the feasibility of powder processing in fabricating these alloys. The addition of Cu in the quinary composition was to understand the effect of compositional change on the transformation temperatures. With the results of the quinary alloy turning out to be favourable, quaternary alloys were then synthesized in order to understand the effect of process parameters such as compaction pressure, temperature and time of sintering on the magnetostructural characteristics of these alloys. The quaternary compacts were prepared at two different compaction loads of 70 KN (184 MPa) and 80 KN (210 MPa). Sintering on them was carried out at two different temperatures of 950 °C and 1050 °C at sintering times of 12, 24, 72 and 144 h. With the use of standard characterization techniques of differential scanning calorimetry, optical/electron microscopy including transmission electron microscopy, Xray diffraction and magnetization testing various issues concerning synthesis and characterization of ferromagnetic Heusler alloys using powder metallurgy are reported and discussed.
Thesis (Ph.D.) -- University of Adelaide, School of Mechanical Engineering, 2019
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15

Deghi, Sebastián Esteban. "Movimiento de maclas inducido por un campo magnético y el efecto memoria de forma ferromagnética en policristales masivos de NiMnGa." Bachelor's thesis, 2016. http://hdl.handle.net/11086/3271.

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Tesis (Lic. en Física)--Universidad Nacional de Córdoba, Facultad de Matemática, Astronomía, Física y Computación, 2016.
Las aleaciones de Ni2MnGa se caracterizan por poseer memoria de forma magnética (FSMA). La clave de este comportamiento es la transformación martensítica que experimentan cuando son enfriadas por debajo de una temperatura crítica, que es muy diferente para variaciones de composición alrededor de la estequiometrica. El mecanismo que da origen a la FSMA tiene lugar en esta fase martensítica e involucra el desplazamiento de maclas, inducido por un campo magnético aplicado. La magnitud del efecto FSMA es importante en monocristales de esta fase, siendo en general despreciable en muestras policristalinas. Sin embargo, se ha observado recientemente que es posible lograr con técnicas de colada por succión cilindros policristalinos de esta aleación, de uno y dos milímetros de diámetro, con granos orientados de manera tal que la textura cristalográfica y el estado de tensiones internas en el material da origen a FSMA.
In the martensite phase, monocrystalline Heusler alloys with composition near Ni2MnGa exhibit Ferromagnetic Shape Memory (FSM). The mechanism leading to the FSM involves twin boundaries displacement, induced for a magnetic field applied; the magnitude of this FSM effect may be important in monocrystals but it is in general negligible in polycrystalline samples. In this work, we report FSM in highly textured polycrystalline cylinders of this alloy, obtained by the Suction Casting method, with diameters of about 1-2 mm. The microstructure and the magnetic properties of these FSM cylinders are discussed.
Fil : Deghi, Sebastián Esteban. Universidad Nacional de Córdoba. Facultad de Matemática, Astronomía, Física y Computación; Argentina.
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16

Riegler, Andreas. "Ferromagnetic resonance study of the Half-Heusler alloy NiMnSb : The benefit of using NiMnSb as a ferromagnetic layer in pseudo-spin-valve based spin-torque oscillators." Doctoral thesis, 2011. https://nbn-resolving.org/urn:nbn:de:bvb:20-opus-66305.

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Seit der Entdeckung des Spin-Torque durch Berger und Slonczewsky im Jahre 1996 gewann dieser Effekt immer mehr an Einfluss in dem Gebiet der Spintronic. Dies geschah besonders durch den Einfluss des Spin-Torque auf die Informationsspeicher und Kommunikationstechnologien (z.B. die Möglichkeit einen magnetischen Zustand eines Speicherelementes mit Hilfe von Strom und nicht wie bisher durch das Anlegen eines magnetischen Feldes zu ändern, oder die Realisierung eines hochfrequenten Spin-Torque-Oszillator (STO). Aufgrund des direkten Zusammenhangs zwischen der Dämpfung in Ferromagneten und der kritischen Stromdichte, die nötig ist um ein Spin-Ventil zu schalten oder ein Präzidieren der Magnetisierung zu induzieren, wurde die Forschung an Ferromagneten mit geringer Dämpfung zunehmend forciert. In dieser Arbeit werden Studien der ferromagnetischen Resonanz (FMR) von NiMnSb Schichten und Transportmessungen an NiMnSb basierten Spin-Ventilen präsentiert. Das Halbmetall NiMnSb ist mit einer theoretischen 100%igen Spinpolarisation prädestiniert für die Verwendung in GMR Elementen. Neben der theoretisch vorhergesagten hohen Spinpolarisation zeigen die durchgeführten FMR Messungen einen überaus geringen Dämpfungsfaktor für dieses Material. Dieser liegt in der Größenordnung von wenigen 10-3. Somit ist die Dämpfung in NiMnSb um den Faktor zwei geringer als in Permalloy und gut vergleichbar mit epitaktisch gewachsenen Eisen-Schichten. Neben den guten Dämpfungseigenschaften zeigen jedoch theoretische Modelle den Verlust der 100%igen Spinpolarisation durch das Brechen der Translationssymmetrie an Grenzflächen und das Kollabieren der Aufspaltung im Minoritäts-Spin-Band. Da ein Wachstum in (111) Richtung diesen Prozess entgegen wirken kann, werden in dieser Arbeit zudem auf (111)(In,Ga)As gewachsene NiMnSb Schichten mittels FMR untersucht. Die Messungen an diesen Proben zeigen, im Vergleich zu (001) orientierten Schichten, eine erhöhte Dämpfung. Zudem kann bei diesen Schichten eine schichtdickenabhängige uni-direktionale magnetische Anisotropie gemessen werden. Im Hinblick auf den möglichen industriellen Einsatz in Speicherelementen werden überdies Messungen an Sub-Mikrometer großen NiMnSb Elementen auf (001) orientierten Substraten präsentiert. Die Elemente wurden mittels Elektronenstrahllithographie hergestellt und mittels FMR vermessen. Auch die so prozessierten Schichten zeigen einen Dämpfungsfaktor im unteren 10-3 Bereich. Das Auftreten von magnetostatischen Moden in den Messungen ist ein weiterer indirekter Nachweis der hohen Qualität der NiMnSb-Schichten. Im Jahre 2001 wurde von Mizukamie und seinen Kollegen eine dickenabhängige Erhöhung der Gilbertdämpfung bei, mit Metallen bedeckten, Permalloy-Schichten beobachtet. Im Jahr darauf wurde von Tserkovnyak, Brataas und Bauer eine Theorie erarbeitet die dieses Phänomen auf ein Pumpen von Spins aus dem Ferromagneten in die Metalschicht zurückführt. Aus diesem Grund werden Messungen von NiMnSb Schichten, die mit verschiedenen Metallen und Isolatoren in-situ vor Oxidation geschützt wurden, präsentiert. Nach diesen materialspezifischen Voruntersuchungen werden auf NiMnSb und Permalloy basierte Pseudo-Spin-Ventile unter Verwendung eines selbst ausrichtenden lithographischen Prozesses hergestellt. Transportmessungen an den Proben zeigen ein GMRVerhältnis von 3,4% bei Raumtemperatur und fast das doppelte bei tiefen Temperaturen. Diese sind sehr gut vergleichbar mit den besten veröffentlichten GMR-Verhältnissen für Einzelschichtsysteme. Überdies kann in den Experimenten eine viel versprechend geringe kritische Stromdichte, die nötig ist, um die magnetische Orientierung zu ändern, gemessen werden. Diese ist vergleichbar mit kritischen Stromdichten aktuellster metallbasierter GMR-Elemente oder auf dem Tunneleffekt basierenden Spin-Ventilen. Das eigentliche Potential der auf NiMnSb basierenden Spin-Ventile wird erst ersichtlich wenn diese als STO zum Emittieren hochfrequenter, durchstimmbarer und schmalbandiger elektromagnetischer Wellen verwendet werden. Auf Heusler basierende STO zeigen einen überdurchschnittlich hohen q-Faktor von 4180, sogar im Betrieb ohne extern angelegtes Magnetfeld. Dieser ist um mehr als eine Größenordnung höher als der höchste veröffentliche q-Faktor eines ohne externes Feld arbeitenden STO. Während die Heusler basierten STO ebenso wie alle anderen STO unter einer geringen Ausgangsleistung leiden, machen die Maßstäbe im Sub-Mikrometer Bereich eine On-Chip Herstellung möglich. Somit kann durch ein Parallelschalten von gekoppelten Oszillatoren eine Erhöhung der Ausgangsleistung erzielt werden
Since the discovery of spin torque in 1996, independently by Berger and Slonczewski, and given its potential impact on information storage and communication technologies, (e.g. through the possibility of switching the magnetic configuration of a bit by current instead of a magnetic field, or the realization of high frequency spin torque oscillators (STO), this effect has been an important field of spintronics research. One aspect of this research focuses on ferromagnets with low damping. The lower the damping in a ferromagnet, the lower the critical current that is needed to induce switching of a spin valve or induce precession of its magnetization. In this thesis ferromagnetic resonance (FMR) studies of NiMnSb layers are presented along with experimental studies on various spin-torque (ST) devices using NiMnSb. NiMnSb, when crystallized in the half-Heusler structure, is a half-metal which is predicted to have 100% spin polarization, a consideration which further increases its potential as a candidate for memory devices based on the giant magnetoresistance (GMR) effect. The FMR measurements show an outstandingly low damping factor for NiMnSb, in low 10-3 range. This is about a factor of two lower than permalloy and well comparable to lowest damping for iron grown by molecular beam epitaxy (MBE). According to theory the 100% spin polarization properties of the bulk disappear at interfaces where the break in translational symmetry causes the gap in the minority spin band to collapse but can remain in other crystal symmetries such as (111). Consequently NiMnSb layers on (111)(In,Ga)As buffer are characterized in respect of anisotropies and damping. The FMR measurements on these samples indicates a higher damping that for the 001 samples, and a thickness dependent uniaxial in-plane anisotropy. Investigations of the material for device use is pursued by considering sub-micrometer sized elements of NiMnSb on 001 substrates, which were fabricated by electron-beam lithography and measured by ferromagnetic resonance. The damping remains in the low 10-3 range as determined directly by extracting the Gilbert damping from the line width. Additionally magnetostatic modes are observed in arrays of elements, which is further evidence of high material quality of the samples. By sputtering various metals on top of the NiMnSb, spin pumping from the ferromagnet into the non-magnetic layer is investigated. After these material investigations, pseudo-spin-valves using NiMnSb as one of the ferromagnet, in combination with Permalloy were fabricating using a self-aligned lithography process. These samples show a GMR ratio of 3.4% at room temperature and almost double at low temperature, comparing favourably to the best single stack GMR structures reported to date. Moreover, current induced switching measurements show promisingly low current densities are necessary to change the magnetic orientation of the free layer. These current densities compete with state-of-the-art GMR devices for metal based structures and almost with tunnel junction devices. The true potential of these devices however comes to light when they are operated as spin torque oscillators to emit high frequency, tunable, narrow spectrum electromagnetic waves. These Heusler based STOs show an outstanding q-factor of 4180, even when operating in the absence of an external field, a value which bests the highest value in the literature by more than an order of magnitude. While these devices currently still suffer from the same limited output power as all STO reported to date, their sub-micron lateral dimensions make the fabrication of an on-chip array of coupled oscillators, which is a promising path forward towards industrially relevant output power
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Ovsyannikov, Ruslan [Verfasser]. "Static and dynamic electronic structure of ferromagnetic Ni metal and Co2FeSi Heusler alloy studied by photoemission spectroscopy / vorgelegt von Ruslan Ovsyannikov." 2009. http://d-nb.info/100102494X/34.

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