Dissertations / Theses on the topic 'Ferroelectric perovskite'

This thesis set out to investigate lead free ferroic materials with perovskite and tungsten bronze type structures, primarily focussing on the relationship between composition, temperature and crystal structure. A combination of diffraction techniques were employed to investigate the crystal structures. Additionally, other techniques including XANES, SEM, TGA, DSC and ferroic peroperty measurements were also employed to further illuminate these compounds. The first system investigated was the defect perovskite Sr0.8Ti0.6-yZryNb0.4O3, 0.0 ≤ y ≤ 0.6. It was found that neutron powder diffraction data were essential for determining the phase boundary composition. Second order compositional and temperature phase transitions were observed. Increasing the zirconium content increased octahedral tilting and led to higher transition temperatures. Local ordering was determined to be highly probable and it was found that the presence of vacancies extended the range of the high symmetry phase. The second system investigated was the BaxSr3-xTi1-yZryNb4O15, 0.0 ≤ x ≤ 3.0, 0.0 ≤ y ≤ 1.0, tungsten bronze type system. Barium rich compositions were found to adopt a tetragonal structure, while strontium rich compositions adopted an orthorhombic structure. Increasing the zirconium content of samples was seen to make the orthorhombic phase persist further. A large focus was placed on determining the structure of Sr3TiNb4O15 as a model for all orthorhombic compounds. A new structural model was proposed for Sr3TiNb4O15 distinct from those previously published. All orthorhombic compositions were observed to undergo first order phase transitions to the tetragonal structure on heating. The barium and strontium atoms were found to order onto two crystallographically distinct A sites. It was found that the tungsten bronze tolerance factor could be used as a predictive tool for the crystal symmetry of these materials. All compounds in this system for which ferroelectric measurements were performed displayed ferroelectric hysteresis behaviour.

Ferroelectric materials have received lots of attention thanks to their intriguing properties such as the piezoelectric and pyroelectric effects, as well as the large dielectric constants and the spontaneous polarization which can potentially be used for information storage. In particular, perovskite crystal has a very simple unit cell structure yet a very rich phase transition diagram, which makes it one of the most intensively studied ferroelectric materials. In this dissertation, we use effective Hamiltonian, a first-principles-based computational technique to study the finite-temperature properties of ferroelectric perovskites. We studied temperature-graded (BaxSr1-x )TiO3 (BST) bulk alloys as well as the dynamics of nanodomain walls (nanowalls) in Pb(ZrxTi1-x )O3 (PZT) ultra-thin films under the driving force of an AC field. Our computations suggest that, for the temperature-graded BST, the polarization responds to the temperature gradient (TG), with the "up" and "down" offset observed in polarization components along the direction of TG, in agreement with the findings from experiments. For the nanowalls in PZT, the dynamics can be described by the damped-harmonic-oscillator model, and we observed a size-driven transition from resonance to relaxational dynamics at a critical thickness of 7.2 nm. The transition originates from the change in the effective mass of a nanowall as a film thickness increases. Some of the findings may find potential applications in various devices, such as thermal sensors, energy converters, or novel memory units.

Perovskite-like layered structured (PLS) compounds display a range of interesting physical and chemical properties, including photocatalysis, photoluminescence, ion conductivity, electrochemical stability, magnetic properties, ferroelectricity and piezoelectricity. There are mainly three homologous series of PLS compounds distinguished by their different BO6 octahedra orientation: the Dion-Jacobson phase (A'An-1BnO3n+1); the AnBnO3n+2 phase; and the hexagonal phase (AnBn-1O3n). Some of the 4-layer AnBnO3n+2 compounds, like La2Ti2O7 and Sr2Nb2O7, have been reported to be ferroelectrics with super high Curie point (above 1300 °C), but no ferroelectric properties have been reported for the 2-layer and 3-layer AnBnO3n+2 compounds, and also there are few reports on the ferroelectric properties of compounds with Dion-Jacobson structure and hexagonal structure. Consequently, in this work, the crystallographic structures, microstructures, dielectric, ferroelectric and piezoelectric properties of (AxLa1-x)Ti2O7 (A = Sm and Eu) solid solutions with 4-layer AnBnO3n+2 structure, Pr3Ti2TaO11 with 3-layer AnBnO3n+2 structure, LaTaO4 with 2-layer AnBnO3n+2 structure, ABiNb2O7 (A = Rb and Cs) with Dion-Jacobson structure and Sr6TiNb4O18 with hexagonal structure were studied. Spark plasma sintering (SPS) was used to sinter ceramics with high density and preferred orientation. X-ray diffraction refinement (XRD) and transmission electron microscopy (TEM) were used to study the crystallographic structures and microstructures of the layer structured compounds. The ferroelectricity was studied using the current-electric field and polarization-electric field hysteresis loops. The Curie point and phase transitions were studied using the temperature dependence of the dielectric constant and loss. Piezoresponse force microscopy (PFM) was also used to study the ferroelectric domain structure of some layer structured compounds. In the first part of this work, the piezoelectric constant of La2Ti2O7 was improved by doping Sm. The crystallographic structure of (Eu1-xLax) 2Ti2O7 and (Sm1-xLax) 2Ti2O7 solid solutions were well studied. (AxLa1-x)Ti2O7 solid solutions were isomorphous with La2Ti2O7 when x was less than 0.5 for (EuxLa1-x)Ti2O7 and 0.8 for (SmxLa1-x)Ti2O7. When x was above their solubility limit, a biphase was observed. The XRD and Raman data suggested that the biphase consisted of (AxLa1-x)2Ti2O7 perovskite-like layered structure and pure Sm2Ti2O7 pyrochlore structure. Ferroelectric domain switching was observed in the I-E and P-E hysteresis loops for textured (SmxLa1-x)Ti2O7 (x < 0.2). The highest d33 was 2.8 pC/N for (Sm0.1La0.9)Ti2O7. In the second part, The Pr3Ti2TaO11 compound was demonstrated to have a 3-layer type II AnBnO3n+2 PLS structure belonging to space group Pmc21 with unit cell parameters a = 3.8689(3) Å, b = 20.389(2) Å, c = 5.5046(5) Å, and its ferroelectric properties were investigated. Analysis of the XRD and TEM results showed that Pr3Ti2TaO11 ceramics have an n = 3 (type II) heteroblock structure consisting of alternating n = 2 and n = 4 octahedral oxide layers. High resolution electron microscopy revealed the layered structure to be highly disordered, with faulting of the heteroblock structure and the coexistence of a n = 4 phase on a fine scale (nm), which was evident as a broadening of the XRD peaks of the ceramics. Pr3Ti2TaO11 ceramic exhibits a super-high Curie point (1415±5 °C). A small, but measurable piezoelectric constant d33 between 0.1 and 0.2 pC/N was detected for the samples poled above 900 °C under an electric field of 100~200 V/cm. Pure LaTaO4 powders with orthorhombic phase were be prepared by co-precipitation method. The orthorhombic LaTaO4 powders have a 2-layer perovskite-like layered structure with space group A21am, which was refined using Rietveld method. The single phase O-LaTaO4 ceramic was prepared using SPS with a slow cooling rate (20 °C/min). A d33 of 0.3 pC/N was obtained from the electric field induced orthorhombic phase. In the second part of this work, the ferroelectricity and piezoelectricity of CsBiNb2O7 with Dion-Jacobson type PLS structure was successfully demonstrated for the first time. The ferroelectricity and piezoelectricity of RbBiNb2O7, which have similar structure with CsBiNb2O7, were also fully studied. Highly textured 2-layer Dion-Jacobson ceramics ABiNb2O7 (A = Rb and Cs) were prepared by one-step SPS. High resolution TEM showed well ordered (0 0 1) lattice planes. Striped ferroelectric domains were observed using PFM. The ferroelectricity and piezoelectricity of CsBiNb2O7 has been demonstrated for the first time. The Tc of RbBiNb2O7 and CsBiNb2O7 are 1098±5 and 1033±5 °C, respectively. The piezoelectric constant of RbBiNb2O7 and CsBiNb2O7 were approximately 5 and 8 pC/N. Thermal depoling studies confirmed the Curie point and the stability of the piezoelectricity. Sr6Nb4TiO18 ceramics with non-centrosymmetric structure were successfully prepared, but no obvious evidence was found to prove its ferroelectricity. The untextured and textured 6-layer Hexagonal compound Sr6Nb4TiO18 was prepared by solid state reaction and spark plasma sintering. Its Curie point was found to be greater than 1500 °C. No ferroelectric properties were observed by studying of I-E and P-E loops, and no d33 was observed after poling.

Organometal halide perovskite absorbers such as methylammonium lead iodide chloride (CH3NH3PbI3-xClx), have emerged as an exciting new material family for photovoltaics due to its appealing features that include suitable direct bandgap with intense light absorbance, band gap tunability, ultra-fast charge carrier generation, slow electron-hole recombination rates, long electron and hole diffusion lengths, microsecond-long balanced carrier mobilities, and ambipolarity. The standard method of preparing CH3NH3PbI3-xClx perovskite precursors is a tedious process involving multiple synthesis steps and, the chemicals being used (hydroiodic acid and methylamine) are quite expensive. This work describes a novel, single-step, simple, and cost-effective solution approach to prepare CH3NH3PbI3-xClx thin films by the direct reaction of the commercially available CH3NH3Cl (or MACl) and PbI2. A detailed analysis of the structural and optical properties of CH3NH3PbI3-xClx thin films deposited by aerosol assisted chemical vapor deposition is presented. Optimum growth conditions have been identified. It is shown that the deposited thin films are highly crystalline with intense optical absorbance. Charge carrier separation of these thin films can be enhanced by establishing a local internal electric field that can reduce electron-hole recombination resulting in increased photo current. The intrinsic ferroelectricity in nanoparticles of Barium Titanate (BaTiO3 -BTO) embedded in the solar absorber can generate such an internal field. A hybrid structure of CH3NH3PbI3-xClx perovskite and ferroelectric BTO nanocomposite FTO/TiO2/CH3NH3PbI3-xClx: BTO/P3HT/Cu as a new type of photovoltaic device is investigated. Aerosol assisted chemical vapor deposition process that is scalable to large-scale manufacturing was used for the growth of the multilayer structure. TiO2 and P3HT with additives were used as ETL and HTL respectively. The growth process of the solar absorber layer includes the nebulization of a mixture of PbI2 and CH3NH3Cl perovskite precursors and BTO nanoparticles dissolved in DMF, and injection of the aerosol into the growth chamber and subsequent deposition on TiO2. While high percentage of BTO in the film increases the carrier separation, it also leads to reduced carrier generation. A model was developed to guide the optimum BTO nanoparticle concentration in the nanocomposite films. Characterization of perovskite solar cells indicated that ferroelectric polarization of BTO nanoparticles leads to the increase of the width of depletion regions in the perovskite layer hence the photo current was increased by one order of magnitude after poling the devices. The ferroelectric polarization of BTO nanoparticles within the perovskite solar absorber provides a new perspective for tailoring the working mechanism and photovoltaic performance of perovskite solar cells.

Physics
Ph.D.
This thesis discusses structural and ferroelectric properties of two well-known classes of materials, perovskite oxides and Hydrogen bonded ferroelectrics, using first-principles calculations. Certain aspects of first principles calculations are central to the problems presented in this thesis. Such as the ability to calculate polarization based on the modern theory of polarization and calculation of ferroelectric property under finite electric displacement field. Therefore, these fundamental theoretical approaches are discussed following an opening section on the basic methodology of density-functional theory. In addition to the discussion on theoretical methods, a brief review of different phenomena and techniques crucial to alter/enhance ferroelectric properties at the interfaces of perovskite materials has been presented along with examples. The first problem presented in this thesis proposes and validates an alternative quantitative measure of ferroelectric(FE) and antiferrodistortive(AFD) instabilities by means of calculating inverse capacitance and layer inverse capacitance of layered perovskites. The presented methodological approach is applied to BaTiO$_{3}$/CaTiO$_{3}$ and PbTiO$_{3}$/SrTiO$_{3}$ superlattices and it precisely estimates FE and AFD instabilities. Here we also present an approach to accurately predict the ferroelectric instabilities in large period superlattices from the statistical coefficients obtained from short period superlattices. In the second problem, we study ferroelectricity in an organic crystal(croconic acid) for which ferroelectric polarization is close to that of bulk BaTiO$_{3}$. We employ new meta-GGA functional named SCAN and revisit all structural and ferroelectric properties. Calculated X-ray absorption spectra(XAS) qualitatively and quantitatively agrees well with experimental O K-edge spectra. By discussing the origin of each XAS peak and their characteristic we demonstrate with a systematic approach the connection between ferroelectricity and XAS in croconic acid. Best to our knowledge such relation has not been realized in past. This study could prove XAS as a new way to measure ferroelectric instability in hydrogen-bonded organic ferroelectrics.
Temple University--Theses

Ferroelectric and antiferroelectric ultrathin films have attracted a lot of attention recently due to their remarkable properties and their potential to allow for device miniaturization in numerous applications. However, when the ferroelectric films are scaled down, it brings about an unavoidable depolarizing field. A partial surface charge compensation allows to control the residual depolarizing field and manipulate the properties of ultrathin ferroelectric films. In this dissertation we take advantage of atomistic first-principles-based simulations to expand our understanding of the role of the partial surface charge compensation in the properties of ferroelectric and antiferroelectric ultrathin films. The application of our computational methodology to study the effect of the partial surface charge compensation in ferroelectric ultrathin films led to the prediction that, depending on the quality of the surface charge compensation, ferroelectric thin films respond to an electric field in a qualitatively different manner. They can be tuned to behave like a linear dielectric, a ferroelectric or even an antiferroelectric. This effect was shown to exist in films with different mechanical boundary conditions and different crystal symmetries. There are a number of potential applications where such properties of ferroelectric thin films can be used. One of these potential applications is energy storage. We will show that, in the antiferroelectric regime, ferroelectric thin films exhibit drastic enhancement of energy storage density which is a desirable property. One of the most promising applications of ferroelectric ultrathin films that emerged only recently is the harvesting of the giant electrocaloric effect. Interestingly, despite numerous studies of the electrocaloric effect in ferroelectric thin films, it is presently unknown how a residual depolarizing field affects the electrocaloric properties of such films. Application of state-of-the-art computational methods to investigate the electrocaloric effect in ferroelectric films with partial surface charge compensation led to the prediction that the residual depolarizing field can perform a dual role in the electrocaloric effect in these films. When the depolarizing field creates competition between the monodomain and nanodomain states, we predict an enhancement of the electrocaloric effect due to the frustration that increases the entropy of the state and therefore the electrocaloric temperature change. On the other hand, when the depolarizing field leads to a formation of nanodomains, thin films either exhibit a small electrocaloric effect or lose their electrocaloric properties altogether to the irreversible nanodomain motion. When the residual depolarizing field is weak enough to permit the formation of monodomain phases, the electrocaloric effect is significantly reduced as compared to bulk. We believe that our findings could potentially reveal additional opportunities to optimize solid state cooling technology. While the electrocaloric effect has been a popular topic of interest in recent years [12], there still exists numerous gaps in the fundamental understanding of the effect. In particular, it is presently unknown whether the scaling laws, known to exist for magnetocaloric materials, can be applied to ferroelectric and antiferroelectric electrocalorics. We predict the existence of scaling laws for low-field electrocaloric temperature change in antiferroelectric and ferroelectric materials. With the help of first-principles-based simulations, we showed computationally that the scaling laws exist for antiferroelectric PbZrO3 along with ferroelectrics PbTiO3, BaTiO3 and KNbO3. Additional evidence of the scaling laws existence are provided using experimental data from the literature. Interestingly, our studies on ferroelectric films predicted the existence of antiferroelectric behavior in ultrathin films with partial surface charge compensation. One may wonder whether it is possible to stabilize the ferroelectric phase in antiferroelectric films and what role the surface charge screening would play in such a transition. Motivated to address these fundamental questions, we used computational experiments to study antiferroelectric ultrathin films with a residual depolarizing field. Our studies led to the following predictions. We found that PbZrO3 thin films exhibit the ferroelectric phase upon scaling down and under the condition of efficient surface charge compensation. We also found a strong competition between the antiferroelectric and ferroelectric phases for the thin films of the critical size associated with antiferroelectric-ferroelectric phase transition. This finding motivated us to study the electrocaloric effect in PbZrO3 thin films with antiferroelectric-ferroelectric phase competition. We found that high tunability of the phase transition by the electric field leads to a wide range of temperatures associated with a strong electrocaloric effect. In addition, we found that epitaxial strain provides further tunability to the electrocaloric properties. In summary, our studies led to a broader and deeper understanding of the abundantly many roles surface charge compensation plays in ultrathin ferroelectrics and antiferroelectrics.

Les matériaux ferroélectriques sont largement utilisés dans d’importantes technologies incluant les transducteurs, actionneurs, capteurs... Parmi les structures ferroélectriques les plus exploitées, celles à base de Pb(Zr,Ti)O3 (PZT) offrent de bonnes performances dans des dispositifs opérationnels. Malgré cet aboutissement en terme de valorisation, la compréhension fondamentale des caractéristiques physiques des systèmes basés sur les céramiques PZT continue de susciter l’intérêt d’une large communauté scientifique. Cependant, un intérêt croissant porte sur la mise en œuvre de structures ferroélectriques exemptes d’éléments chimiques nocifs pour l’environnement dont la teneur en plomb. Dans ce cadre, les systèmes à base de BiFeO3-BaTiO3 (BF-BT) ont suscité beaucoup d'intérêt en tant que matériaux ferroélectriques sans plomb. Ce travail de thèse porte sur des études systématiques portant sur les céramiques à base de PZT et celles à base de BF-BT. Trois contributions ont été développées doant la première dédiée à l'analyse des microstructures, des phases cristallines et des propriétés ferroélectriques dans les systèmes PZT dopés. Les travaux ont montré le rôle du dopage Soft-Hard sur les propriétés structurales, morphologiques et électriques des matériaux dopés accepteurs. Dans une deuxième partie, l'interaction des microstructures et des propriétés électriques a été étudiée dans les systèmes BF-BT. L’optimisation des conditions de fabrication à travers la composition chimique et le traitement thermique contribue aux propriétés piézoélectriques améliorées dans ces systèmes sans plomb. Pour la troisième partie des travaux, des études expérimentales de fabrication, texturation et les caractérisations des propriétés ferroélectriques et électromécaniques ont été corrélées avec l’organisation structurale et morphologique des céramiques texturées
Ferroelectric materials have been widely applied in transducers, high-pressure generators, actuators, sensors... In this context, the ferroelectric materials are generally regarded as being related to an important class of smart materials. Among the most popular ferroelectric materials, those based on Pb(Zr,Ti)O3 (PZT) structures show the best performances in operating devices. Despite such achievements, the fundamental understanding of the physical characteristics continues to arouse the interest of a wide scientific community. On the other hand, in view of the environmental-friendly requirement, more attention have been paid by the researchers to lead-free ferroelectric materials. Thus, BiFeO3-BaTiO3 (BF-BT) systems have attracted a great deal of interest as promising candidate for lead-free ferroelectric materials. In this dissertation, PZT-based and BF-BT-based ceramics were investigated systematically. Three contributions have been developed with the first dealing with the analysis of microstructures, crystalline phases and electric properties in doped PZT systems. It was revealed the involvement of softening-hardening features and the relation between defect dipoles and electric properties in acceptor doped materials. In a second part, the interplay of microstructures and electric properties was studied in BF-BT systems, providing the relevant analysis of the optimized performance such as the enhanced piezoelectric properties of lead-free systems. In the third contribution, experimental methods of synthesis and texturing BF-BT systems by BT templates ad the characterization of ferroelectric and electromechanical properties have been correlated with the structural and morphological organization of textured ceramics

The discovery of ferroelectricity at the nanoscale has incited a lot of interest in perovskite ferroelectrics not only for their potential in device application but also for their potential to expand fundamental understanding of complex phenomena at very small size scales. Unfortunately, not much is known about the dynamics of ferroelectrics at this scale. Many of the widely held theories for ferroelectric materials are based on bulk dynamics which break down when applied to smaller scales. In an effort to increase understanding of nanoscale ferroelectric materials we use atomistic resolution computational simulations to investigate the dynamics of polar perovskites. Within the framework of a well validated effective Hamiltonian model we are able to accurately predict many of the properties of ferroelectric materials at the nanoscale including the response of the soft mode to mechanical boundary conditions and the polarization reversal dynamics of ferroelectric nanowires. Given that the focus of our study is the dynamics of ferroelectric perovskites we begin by developing an effective Hamiltonian based model that could simultaneously describe both static and dynamic properties of such materials. Our study reveals that for ferroelectric perovskites that undergo a sequence of phase transitions, such as BaTiO3. for example, the minimal parameter effective Hamiltonian model is unable to reproduce both static and dynamical properties simultaneously. Nevertheless we developed two sets of parameters that accurately describes the static properties and dynamic properties of BaTiO3 independently. By creating a tool that accurately models the dynamical properties of perovskite ferroelectrics we are able to investigate the frequencies of the soft modes in the perovskite crystal. The lowest energy transverse optical soft modes in perovskite ferroelectrics are known to be cause of the ferroelectric phase transition in these materials and affect a number of electrical properties. The performance of a ferroelectric device is therefore directly influenced by the dynamics of the soft mode. Interestingly, however, little study has been done on the effect of mechanical boundary conditions on the soft modes of perovskites. Understanding the effect of mechanical forces on the soft modes is critical to device applications as complicated growth structures often are the cause of pressures, stresses and strains. Using classical molecular dynamics we study the effect of hydrostatic pressure, uniaxial stress, biaxial stress and biaxial strain on the soft modes of the ferroelectric PbTiO3. The results of this study indicate the existence of Curie-Weiss laws for not only hydrostatic pressure, which is well known, but also for uniaxial stress, biaxial stress and biaxial strain. The mode frequencies are also seen to respond very differently to these mechanical forces and lead to a more complete picture of the behavior of nanoscale ferroelectrics. One nanoscale geometry of perovskite ferroelectrics is the pseudo one-dimensional nanowire. These structures have very unique properties that are highly attractive for use as interconnects, nanoscale sensors or more directly in computer memory devices. Perovskite nanowires have only recently been synthesized and the techniques are not well developed. While progress has been made towards consistently fabricating uniform, high quality nanowires experimental investigation of their properties is prohibitively difficult. Of immediate interest is the polarization reversal dynamics of ferroelectric nanowires. The reading and writing of bits of information stored in a wire's polarization state is done by switching the polarization. Again using classical molecular dynamics we study the polarization reversal dynamics in ferroelectric nanowires made of Pb(Ti1-xZrx)O3 disordered alloy. We find that there are two competing mechanisms for polarization reversal and that the interplay of these mechanisms is dependent on electric field strength. The dynamics in nanowires also sheds light on long standing theories about polarization reversal mechanisms in thin film and bulk geometries.

Abstract Nd-modified lead-zirconate-titanate (PNZT) thin films were deposited on MgO(100), Si(100) and Al2O3(1102) single-crystal substrates using the pulsed-laser-ablation technique with a XeCl excimer laser. The post-annealing heat-treatment technique was used for the crystallisation of the films. The structural characterization, microstructure and the chemical composition of the thin films and of the ceramic Pb0.97Nd0.02(Zr0.55Ti0.45)O3 targets after ablation were studied using x-ray diffraction, scanning electron microscopy and energy-dispersive x-ray spectroscopy, respectively. The formation of the particulates on the target surface during the ablation process and the effect of the particulates on the quality of the thin films were studied. Typically, the ferroelectric PNZT thin films for the capacitor structures were deposited at the laser-beam fluence of around 1.0 J/cm2 and annealed at the temperatures from 600 to 700 °C. The dielectric and, especially, the polarization properties and the residual macroscopic stress state of the PNZT thin films were studied. The relationship between the electrical properties of the films and the nature of the stress state was also investigated. The average growth rate of the PNZT films increased linearly with increasing laser-beam fluence above the threshold value of around 0.4 J/cm2. The composition of the PNZT films varied strongly with the deposition laser-beam fluence and annealing temperature. The phase structure of PNZT films ablated from Pb0.97Nd0.02(Zr0.55Ti0.45)O3 targets could be adjusted between tetragonal and rhombohedral structures by changing the incident laser-beam fluence on the target surface. The surface of the target after ablation was covered by the laser-cone structure and the topmost layer of the target was amorphous having TiO2 and ZrO2 structures with separate segregated lead droplets. On MgO substrates, values of the relative dielectric constant er from 430 to 560 and of the remanent polarization εr of the order of 18 μC/cm2 were achieved in PNZT films which were under a compressive stress of the order of 300 MPa. On silicon substrates, εr was around 100 and the polarization properties of the films were modest due to a strong tensile stress of the order of 400 MPa. The Poole-Frenkel conduction mechanism with the activation energy of around 0.2 eV was found responsible for the leakage conductivity in the capacitor structures with PNZT films.

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
Visible light accounts for the biggest fraction of the solar irradiance. One of the strategies for achieving higher photovoltaic power conversion efficiency is the application of low band-gap materials (Eg ideal≈1.4 eV) capable of absorbing this fraction of the solar spectrum. Ferroelectric semiconductors have been studied in this field due to the above-bandgap generated photovoltages and their ferroelectric polarization-driven carrier separation. Ferroelectric oxides usually present wide bandgaps which allow the absorption of only 8-20% of the solar spectrum. However, the development of new ferroelectric materials, particularly KBNNO [KNbO3]0,9[BaNi0,5Nb0,5O3-δ ]0,1 (Eg = 1.39 eV) and KBiFe2O5 (Eg=1,60 eV), has encouraged the use of such materials in solar cells. Simple synthesis routes, with short steps, time and temperatures are essential for the future progress of the application of such ferroelectric oxides in solar cells. KBNNO and KBiFe2O5 require high crystallization temperatures, which reduce the number of potential substrates and electrode materials that could be used in devices, as polymer-based flexible ones. Obtaining this oxides in a high surface-area powder form might be a strategy to further incorporation in solar cells composed of low-temperature processing materials. This work reports for the first time synthesis of KBNNO and KBiFe2O5 by solution combustion (SCS). Characterization by WAXD, SEM, EDS, TG/DSC and Diffuse Reflectance UV-Vis Spectroscopy and dielectric constants indicates the success of the synthesis. The optical properties show the visible-light absorption contribution and band-gaps closer to the ideal magnitude for solar applications compared to the non doped materials. The SCS was shown as an effective route to obtaining the phase. Furthermore, it is possible to improve it in order to produce powders with smaller particle size and absent of secondary phases.
A luz visível representa a fração mais relevante da radiação solar. Desta maneira, busca-se empregar nas camadas ativas das células solares materiais com baixos band-gaps (Eg ideal ≈1,4 eV), capazes de absorver fótons nessa região do espectro. Semicondutores ferroelétricos com estrutura da perovskita ou estruturas relacionadas têm sido estudados nesse campo devido ao potencial de obtenção de voltagens superiores à magnitude de seus band-gaps e à contribuição na separação de portadores de cargas decorrente da polarização intrínseca presente nesses materiais. Óxidos ferroelétricos geralmente possuem Eg elevados (2,7-4 eV), permitindo o aproveitamento de somente 8-20% do espectro solar. No entanto, o desenvolvimento de novos semicondutores ferroelétricos, particularmente a KBNNO [KNbO3]0,9[BaNi0,5Nb0,5O3-δ ]0,1 (Eg=1,39 eV) e KBiFe2O5 (Eg=1,60 eV), tem encorajado a aplicação desses materiais em células solares. Rotas de síntese simples, com etapas, tempos e temperaturas reduzidas são essenciais para o progresso futuro da aplicação de tais óxidos ferroelétricos em células solares. A KBNNO e KBiFe2O5 cristalizam em temperaturas mais elevadas do que perovskitas orgânico-inorgânicas, o que reduz a possibilidade de fabricação de dispositivos na presença de substratos e eletrodos sensíveis à temperatura, como substratos poliméricos flexíveis. Assim, a obtenção desses óxidos na forma de pós de elevada área superficial pode ser uma estratégia para posterior incorporação em dispositivos contendo materiais processados a baixas temperaturas. Neste trabalho, reporta-se pela primeira vez a síntese da KBNNO e KBiFe2O5 por combustão em solução. Caracterizações por DRX, MEV, EDS, TG/DSC, Espectroscopia UV-Vis e constantes dielétricas indicam a obtenção das fases com sucesso. As propriedades ópticas confirmam contribuição na absorção da luz visível com respeito aos materiais não dopados, KNbO3 e BiFeO3. A síntese por combustão em solução se mostra efetiva para obtenção das fases, mas passível de melhorias para produção de pós com menor tamanho de partícula e sem a presença de fases secundárias.
CNPq: 155305/2014-0

Nowadays BaTiO3 is considered as one of the most relevant environmental-friend ferroelectric and, thank to the chemical substitutions at the Ba2+ and/or Ti4+ sites, its properties are usually tailor to meet a big variety of devices and performance requirements. A classical example is the solid solution BaTi1-xMIVxO3, where M could be Sn, Zr, Hf, Ce etc., whose ferroelectric behavior shows an almost continuous variation with composition. The study of these compounds is then essential to improve their characteristics and make their suitable in more applications. Considering that their properties are deeply linked to the structure and especially to structural defects, average and local structural analyses are essential to better understand the origins of different polar behaviours and to have a real control on these materials. Despite this need, only BaTi1-xZrxO3 (BTZ) system, which is one of the most popular dielectrics used in multilayer ceramic capacitors, has been investigated in some detail. Although the similarity to BTZ suggests that BaTi1-xCexO3 (BTC) may be promising as lead free actuator materials, studies on this solid solution are almost limited. Thus in this research the BTC solid solution has been structurally investigated in order to provide knowledge lacks. Different ceramic samples with different doping amounts and different polar behaviours (from normal ferroelecric to relaxor via diffuse phase transition) have been investigated at different temperatures. In addition, taking into account the current tendency in miniaturized devices required in microelectronics, also chemical equivalent nano powders have been considered to explore not only doping effects, but also that of size. Pair Distribution Function (PDF) with different type of approaches (as carbox, biphasic and so on) has been employed coupled with TEM analysis and Raman spectroscopy. A complete description of that BaTi1-xCexO3 materials is given underlining links between polar behaviours, temperature, doping and size effects.

This work deals with the structural and dielectric properties of Bariumtitanate (BTO) / Strontiumtitanate (STO) superlattices. The investigations were carried during the research for a doctoral thesis on the IFW Dresden, Institute for Metallic Materials (under supervision of Prof. Schulz). These multilayers have been prepared on single crystalline STO of (100) and (111) orientated substrates. All films where grown in an epitaxial mode. Additional superlattices and Bariumstrontiumtitanate (BSTO) thin films on silicon substrates with platinum bottom electrodes have been prepared. Thereby, (111) fibre-textured polycrystalline superlattices were produced. According to our knowledge this result was achieved for the first time (is unique in the world at the moment). According to high resolution TEM investigations of (001) oriented superlattices multilayers with atomically thin interfaces without noticeable interdiffusion have been prepared. XRD pattern of a multilayer consisting of BTO and STO monolayers that have only a thickness adequate one unit cell of BTO respective STO confirm this assumption. Multilayers on (111) oriented STO substrates show a much higher interface roughness than (001) orientated films. Regarding to the examinations in this thesis it is suggested that the roughness is correlated with the reduction of internal stresses by deformation of the stack and not with interdiffusion between the monolayers. For electrical measurements the film thickness has been varied from 30 nm to 300 nm and the periodicity in the range from 0.8 nm to 20 nm. Additionally, BSTO films of equivalent thickness and integral chemical composition were produced. Dielectical measurements were carried out in the temperature range from 20 K to 600 K and hysteresis measurements were done. It has to be pointed out, that multilayers have always lower dielectrical performances then BSTO films. In all cases the dielectric constant (DC) decreases with decreasing film thickness. Multilayers of a small periodicity show the highest DC?s, decreasing with increasing monolayer thickness in all cases. The maximum of DC shifted with decreasing film thickness to higher temperatures thus correlating with an increase of the out of plane lattice parameter. In this paper the mismatch between the stack respectivly the BSTO layers and the substrate has widely been discussed. In the case of BSTO the dielectric data can be qualitatively explained with the theory of strained films, developed mainly by Pertsev, under the assumption of a strain gradient in the thin film. Strain effects do also play an important role in ferroelectric multilayers as well as size and coupling effects between the monolayers. An adequate theory for the description of the dielectric behaviour of the ferroelectric superlattice produced during this research does yet not exist. Some thesis where pointed out, which effects have to be essentially included in to a consistent theory of ferroelectric multilayer. Some practical tips are also given, how to prepare monolayers and superlattices with very high DC and exellent hysteretic behaviour.
Es wurden (001) und (111) orientierte symmetrische BTO/STO-Multilagen auf niobdotierten STO-Einkristallen abgeschieden. Hierbei wurde sowohl die Gesamtschichtdicke, als auch deren Periodizität variiert. Zum Vergleich wurden weiterhin Ba0.5Sr0.5TiO3-Mischschichten unterschiedlicher Dicke präpariert. Aus den HRTEM und XRD Untersuchungen kann geschlossen werden, dass alle erhaltenen Schichten sowohl phasenrein als auch perfekt biaxial texturiert sind. Im Falle der (001) orientierten Multilagen konnten atomar scharfe Grenzflächen zwischen Einzellagen erhalten werden, wobei sich die Einzellagendicke bis auf eine Monolage (0.4 nm) reduzieren lässt. Aus der Schichtdickenabhängigkeit von d(001), dem mittleren out-of-plane Gitterparameter der Schicht, wird geschlossen, dass die Schichten auf den STO-Einkristallen Spannungsgradienten in den Schicht-normalen besitzen und an der Grenzfläche zum Substrat am stärksten verspannt sind. Die (111) orientierten Multilagen auf den STO-Einkristallen zeigen gegenüber den Schichten auf den (100) orientierten STO-Einkristallen eine deutlich erhöhte Interfacerauhigkeit. Vermutet wird, dass dies einerseits durch die andere kristallographische Orientierung der Wachstumsnormalen bedingt ist, weil damit jeweils keine geschlossenen SrO- bzw. BaO- und TiO3-Lagen ausgebildet werden. Andererseits zeigen die TEM-Aufnahmen eine deutliche Zunahme der Welligkeit der Einzellagen mit wachsendem Abstand vom Substrat, die rein mechanischen Effekten zugeschrieben wird. Die Verwölbung der Einzellagen könnte damit der Reduzierung der mechanischen Energie innerhalb des Systems dienen, wobei die Netzebenen dem Verlauf der Einzellagen folgen. Auf platinbeschichteten Siliziumsubstraten konnten erstmals phasenreine (111) fasertexturierte Mischschichten und BTO/STO-Multilagen abgeschieden werden. Grundlage hierfür war die Optimierung des Pt/Ti/SiO2/Si Schichtsystems hinsichtlich seiner thermischen Stabilität bis zu 800°C. Die Textur der Schichten wird von der Platingrundelektrode übernommen und deren Rauhigkeit teilweise verstärkt. Eine mechanische Verwölbung der Einzellagen konnte hier nicht beobachtet werden. Für die elektrischen Messungen wurden auf allen Schichten etwa 50 nm dicke Platinelektroden durch eine Hartmaske mittels Elektronenstrahlverdampfung im Hochvakuum bei etwa 300°C aufgebracht. Anschließend wurden die Schichten an Luft getempert, um das Sauerstoffdefizit, dass sich bei der Elektrodenabscheidung einstellt, auszugleichen. Die elektrischen Messungen zeichnen sich durch den sehr großen untersuchten Temperaturbereich aus. Temperaturabhängige Messungen im Bereich von 30-600 K finden sich für ferroelektrische Dünnschichten sehr selten in der Literatur und stellen für BTO/STO-Multilagen ein Novum dar. Auch die biasabhängige und teilweise auch temperaturabhängige Messung der Kapazität der Multilagen (C-V-Messungen) ist bisher einmalig. Durch die temperaturabhängigen Hysteresemessungen wurden Einblicke in den elektrischen Polungszustand der Schichten erhalten. Dadurch wird eine sinnvolle Interpretation der &amp;#949;(T)-Kurven erst möglich. Der Vorteil der Integration des Polarisationsstromes unter Verwendung einer Dreieckspannung als Messsignal besteht in der direkten physikalischen Aussage der Strom-Spannungskurven über die Schaltspannung der Schichten.

Les matériaux de structure pérovskite de formule générale ABO3 sont les ferroélectriques les plus étudiés pour leurs propriétés intéressantes dans de nombreuses applications technologiques. Cependant leurs propriétés sont directement reliées à la structure et sont fortement conditionnées par les transitions de phases qui dépendent de la température, de la composition chimique et de la pression. Dans le manuscrit de thèse, le comportement sous haute pression de deux matériaux pérovskite SrTi1-xZrxO3 (STZ) et KNb1-XTaXO3 (KNT) est étudié et différentes techniques de frittage pour améliorer la densité des céramiques et optimiser les propriétés ferroélectriques des céramiques K(Nb0.40Ta0.60)O3 et (KxNa1-x)Nb0.6Ta0.4O3 sont examinées.Des analyses sous hautes pressions par spectroscopie Raman et diffraction des rayons X des poudres de SrTi1-xZrxO3 (x= 0.3, 0.4, 0.5, 0.6, 0.7) et KNb1-XTaXO3 (x=0.4, 0.5, 0.6, 0.9) en enclume diamant ont été réalisées. Les spectres Raman montrent une augmentation des modes Raman avec la pression pour les poudres de STZ indiquant que la pression induit des transitions de phases vers des symétries plus basses de la maille dans ces composés.De plus, les expériences de spectroscopie Raman ont fait apparaître une décroissance des modes Raman lorsque la pression est augmentée, montrant bien que la pression induit des transitions de phases vers des structure plus symétriques. L'évolution du mode Raman principal pour les phases orthorhombique et quadratique a été suivi jusqu'à ce que la phase cubique apparaîsse, ce qui nous a permis de proposer un diagramme de phase pression-composition pour les composés KNT.Trois différentes techniques de frittage, utilisation d'additifs, frittage en deux paliers et SPS ont été étudiées pour les céramiques de K(Nb0.4Ta0.6)O3 et (KxNa1-x)Nb0.6Ta0.4O3 . La constante diélectrique et les pertes en fonction de la température des céramiques ont été améliorées par l'utilisation du KF comme additif de frittage et par le frittage en deux paliers. Les échantillons densifiés par SPS présentent une microstructure fine et possèdent les plus fortes densités. Ils ont les meilleurs propriétés ferroélectriques. Aucun changement significatif de la température de Curie ne semble être induit par le taux de Na, et on observe cependant une augmentation de la constante diélectrique et des propriétés ferroélectriques suivant le taux de Na
Perovskite materials whose general chemical formula is ABO3 are one of the most study ferroelectrics due to the interesting properties that they have for technological applications. However, their properties are directly related to structural phase transitions that could depend of temperature, composition and pressure. In the studies presented here, we first examined the high-pressure behavior of two perovskite materials SrTi1-xZrxO3 (STZ) and KNb1-XTaXO3 (KNT), and we later continued to investigate different sintering techniques in order to improve the densification, dielectric and ferroelectric properties of K(Nb0.40Ta0.60)O3 and (KxNa1-x)Nb0.6Ta0.4O3 ceramics.High-pressure Raman scattering and X-ray diffraction investigations of SrTi1-xZrxO3 (x= 0.3, 0.4, 0.5, 0.6, 0.7) and KNb1-XTaXO3 (x=0.4, 0.5, 0.6, 0.9) powders were conducted in diamond anvil cells. Raman scattering experiments showed and increased of Raman modes with pressure for the STZ samples, which indicates that pressure induced phase transitions towards lower symmetry for these compounds.Moreover, high pressure Raman spectroscopy experiments showed a decrease of the Raman modes as the pressure was increased for the KNT samples, showing that pressure induced phase transitions towards higher symmetries. The evolution of the main Raman modes for the orthorhombic and tetragonal phases were followed until the cubic phase was reach, and allowed us to propose a pressure-composition phase diagram for the KNT compounds.Three different sintering techniques, sintered aids, two step sintering and spark plasma sintering, were used on K(Nb0.4Ta0.6)O3 and (KxNa1-x)Nb0.6Ta0.4O3 ceramics. The use of KF as sintered aid and the two step sintering method showed an improvement of the dielectric constant and dielectric losses of these samples. SPS samples presented a fine microstructure with the highest density and the best ferroelectric behavior. We did not detect any changes on the Curie temperature due the amount of Na but and increase of the dielectric constant and the ferroelectric properties was observed due to the amount of Na

Ce travail de recherche porte sur l'étude d'un nouveau matériau issu de la combinaison de deux oxydes perovskites ferroélectriques Sr2Ta2O7 et La2Ti2O7 ; la solution solide résultante est formulée selon (Sr2Ta2O7)100 x(La2Ti2O7)x (STLTO). Notre étude comprend la synthèse de poudres, la réalisation de céramiques, le dépôt de films minces et leur caractérisation structurale, morphologique, élémentaire, optique, diélectrique et ferroélectrique. L'objectif visé à moyen terme pour ce matériau est son intégration dans des dispositifs hyperfréquences miniatures et reconfigurables. Pour cela, sont recherchées des permittivités élevées, variables sous champ électrique, afin d'atteindre une accordabilité du matériau, puis une reconfigurabilité en fréquence des antennes, par exemple. L'analyse structurale par diffraction des rayons X a confirmé, par la variation linéaire des paramètres de maille, la formation de la solution solide pour les compositions x ∊ [0-5]. Les analyses diélectriques menées à basses fréquences (1 100 kHz) sur les céramiques STLTO ont montré des valeurs maximales de permittivité (375) et d'accordabilité (55 % à 3 kV/mm), associées à des tangentes de pertes faibles (0,01), pour la composition x = 1,65. Les mesures en hautes fréquences (200 MHz – 18 GHz) sont en accord avec les résultats obtenus en basses fréquences. Le dépôt de films minces par pulvérisation cathodique réactive, réalisé à partir d'une cible de composition x = 1,65, produit des films s'apparentant à la phase Sr2,83Ta5O15, ce qui dénote une perte en strontium. Cependant, à basses fréquences, les films présentent des permittivités relativement élevées (130) pour des pertes faibles (0,01) avec une accordabilité modérée (A = 14,5% à 340 kV/cm à f =100 kHz). Le dépôt de films minces oxynitrures (Sr,La)(Ta,Ti)O2N, réalisé en atmosphère réactive Ar + N2, mènent à des échantillons colorés ayant des permittivités élevées (jusqu'à 3000 environ), mais avec des pertes également élevées (jusqu'à 2) et sans accordabilité. Par ailleurs, l'étude de films SrTaO2N a montré que ces composés sont adaptés pour la décomposition de l'eau sous lumière visible
This research focuses on the study of a new material resulting from the combination of two ferroelectric perovskite oxides Sr2Ta2O7 and La2Ti2O7; the resulting solid solution is formulating according to (Sr2Ta2O7)100 x(La2Ti2O7)x (STLTO). Our study includes the synthesis of powders, the realization of ceramics, thin film deposition and their structural, morphological, elemental, optical, dielectric and ferroelectric characterizations. The medium-term objective for this material is its integration into miniature and reconfigurable microwave devices. For this, high permittivity, variable under electric field, is required in order to achieve a tunability of the material, then a reconfigurability of the antennas, for example. Structural analysis by X-ray diffraction confirmed, by the linear variation of the cell parameters, the formation of the solid solution for the compositions x ∊ [0-5]. The dielectric analyzes carried out at low frequencies (1 - 100 kHz) on STLTO ceramics showed maximum values of permittivity (375) and tunability (55% at 3 kV/cm), associated with weak loss tangents (0,01), for the composition x = 1.65. The measurements at high frequencies (200 MHz – 18 GHz) are in agreement with the results obtained at low frequencies. The deposition of thin film by reactive sputtering, made from a target of composition x = 1.65, produces films similar at Sr2.83Ta5O15 phase, which denotes a loss of strontium. However, at low frequencies, the films have relatively high permittivity (130) for low losses (0.01) with moderate tunability (A= 14.5% at 340 kV/cm at f = 100 kHz). Deposition of oxynitride thin film (Sr,La)(Ta,Ti)O2N, carried out in Ar + N2 reactive atmosphere, leads to coloured samples having high permittivity (up to about 3000), but with equally high losses (up to 2) and without tunability. Moreover, the study of SrTaO2N showed that these compounds are suitable for the decomposition of water under visible light

Cette thèse vise à trouver des approches possibles pour l’amélioration des propriétés électromécaniques de monocristaux piézoélectriques à base de KNN. La TSSG et la SSSG sont entreprises afin de faire croître des monocristaux La conclusion de l'aspect de croissance cristalline est: (1) Pour chaque élément pris individuellement, leurs coefficients de ségrégation reposent fortement sur leurs concentrations initiales dans la solution liquide. (2) La compétition entre éléments occupant le même site du réseau est démontrée. (3) Le très faible coefficient de ségrégation de Li dans la matrice KNN est responsable de l'apparition d'une phase secondaire présentant la structure bronze de tungstène quadratique. (4) Les régions optiquement laiteuses observées dans les monocristaux diminuent la réponse électrique et peuvent être réduites par traitement thermique et refroidissement lent. Dans la deuxième partie, nous avons utilisé trois approches pour améliorer le comportement piézo/ferroélectrique des monocristaux à base de KNN. La Ta ou Sb substitution indique qu'une réponse électromécanique améliorée est obtenue lorsque la transition orthorhombique-quadratique est à proximité de la température ambiante. Le traitement thermique sous atmosphère d'O2 pur a conduit au doublement de la valeur du coefficient piézoélectrique et des paramètres ferroélectriques d'un monocristal de (K,Na,Li) (Ta,Nb,Sb)O3. Son coefficient piézoélectrique à la température ambiante, qui constitue un record mondial à l’heure actuelle vis-à-vis de ce qui est reporté dans la littérature internationale, vaut 732 pC/N. La troisième approche consiste au dopage des monocristaux de (K,Na,Li)(Ta,Nb)O3 avec Mn
The thesis aims to find possible approaches for improved electromechanical properties in KNN-based piezoelectric single crystals. Both submerged-seed and top-seeded solution growth techniques were employed to produce single crystals. Conclusions from the crystal growth aspect are: (i) For individual elements, segregation coefficients highly rely on the initial concentration in the liquid solution. (ii) A competition between elements occupied on the same lattice site was found. (iii) The very low Li segregation coefficient in the KNN matrix is responsible for the occurrence of a secondary phase with the tetragonal tungsten bronze structure. (iv) Observed optically-cloudy regions in as-grown crystals decrease the electrical response and can be reduced by thermal treatment with slow cooling. In the second part, we used three approaches to enhance the piezoelectric and ferroelectric behavior of KNN-based single crystals. Ta or Sb substitutions indicates that enhanced electromechanical response is achieved when the orthorhombic-tetragonal phase transition is near room temperature. Thermal treatment in pure O2 atmosphere resulted in a twofold increase of the piezoelectric coefficient and ferroelectric parameters of a (K,Na,Li)(Ta,Nb,Sb)O3 single crystal. The highest room-temperature piezoelectric coefficient in annealed KNN-based single crystals of 732 pC/N was obtained. The third approach, doping with Mn ions in (K,Na,Li)(Ta,Nb)O3 single crystals, is also presented

Les solutions solides appartenant au système quasi-ternaire BaTiO3-CaTiO3-BaZrO3 (BCTZ) sont des candidates prometteuses pour les piézoélectriques sans plomb. Ce travail de thèse expérimental est consacré à la cristallogenèse et à la caractérisation de différents monocristaux dans le système BCTZ : BaZrO3, CaTiO3 ainsi que les solutions solides Ba1-xCaxTi1-yZryO3 présentant des teneurs en zirconium (Zr) et en calcium (Ca) proches de celles de la composition Ba(Zr0.2Ti0.8)O3-50(Ba0.7Ca0.3)TiO3 (BZT-50BCT) où les performances piézoélectriques sont exacerbées.Les monocristaux de CaTiO3 et de BaZrO3 ont été obtenus à la fois depuis une solution à haute température par la méthode du flux et à partir de leur phase fondue par la technique de la zone flottante optique. Dans le cas de CaTiO3 obtenu dans un four à image à 1975°C, l'aluminium (Al), le magnésium (Mg) et le baryum (Ba) ont été détectés comme étant les principales impuretés. Les spectres Raman de CaTiO3 sont en bon accord avec les spectres référencés dans la littérature. La croissance cristalline de BaZrO3 est beaucoup plus difficile à cause de son point de fusion très élevé (2700°C). Le flux BaB2O4 a été utilisé avec succès pour faire croitre des cristaux d’environ 150-200μm à 1350°C, soit à la moitié de son point de fusion. Des boules de BaZrO3 de taille centimétrique ont également été obtenues à partir de la phase fondue en four à image. Les impuretés majoritaires telles le strontium (Sr), l’hafnium (Hf), le calcium (Ca) et le titane (Ti) ont été détectées par GDMS et SIMS dans une gamme de concertation atomique de 0.3-0.5%. L’énergie de gap optique est d'environ 4,8 eV et souligne la grande qualité des cristaux de BaZrO3 obtenus en four à image. Les propriétés diélectriques à basse température de BaZrO3 confirment l'absence de transition de phase structurelle. Les études de Raman révèlent que même si BaZrO3 n'a pas de transition de phase à basse température, il présente une transition de phase cubique-quadratique sous haute pression à 11GPa à température ambiante.Dans la deuxième partie de cette thèse, des monocristaux centimétriques de BCTZ ont été obtenus avec succès par la croissance en flux. Les profils de concentrations en Ca et Zr le long des boules indiquent que leurs coefficients effectifs de ségrégation dépendent fortement de leur concentration initiale dans la solution liquide. Ceux-ci évoluent considérablement au cours du processus de cristallogenèse, rendant ainsi la croissance de BCTZ très délicate en vue d’obtenir des compositions constantes et proches de celles de la région de convergence de phases. De plus, une décomposition spinodale a été mise en évidence, indiquant la coexistence de deux solutions solides de compositions proches au sein des cristaux de BCTZ. Les propriétés diélectriques et piézoélectriques des cristaux obtenus ont été déterminées et présentent des caractéristiques allant du ferroélectrique classique au relaxeur. Les mesures diélectriques montrent notamment une double boucle d'hystérésis (PE) anormale qui disparaît après polarisation
Solid solutions belonging to BaZrO3–BaTiO3–CaTiO3 (BCTZ) pseudo-ternary system are promising candidates for lead-free piezoelectrics. This thesis aims at growing and characterizing various single crystals of the BCTZ system: the end members BaZrO3 and CaTiO3 as well as Ba1-xCaxTi1-yZryO3 solid solution compounds with zirconium (Zr) and calcium (Ca) contents close to Ba(Zr0.2Ti0.8)O3-50(Ba0.7Ca0.3)TiO3 composition (BZT-50BCT) where high piezoelectric performances are expected.CaTiO3 and BaZrO3 single crystals were both grown from high temperature solution by the flux method and from the melt by the optical floating zone technique. In the case of CaTiO3 grown with a mirror furnace at 1975°C, aluminum (Al), magnesium (Mg) and barium (Ba) as main impurities were detected. The Raman spectra of CaTiO3 are in good agreement with the spectra referenced in the literature. The growth of BaZrO3 was more challenging because of its very high melting point (2700°C). BaB2O4 flux was successfully used to produce 150-200 μm-sized BaZrO3 crystals at half its melting point (1350°C) and bulk centimeter-sized BaZrO3 boules were grown from the melt. Sr, Hf, Ca and Ti were detected by GDMS and SIMS as main impurities in the range of 0.3-0.5 at.%. The optical band gap is found to be ~4.8 eV and indicates the high quality of the BaZrO3 crystals grown with mirror furnace. Low temperature dielectric properties of BaZrO3 are displayed and confirmed the absence of structural phase transition. Raman investigations reveal that even though BaZrO3 does not have any phase transition at low temperatures, it exhibits a high-pressure phase transition from cubic to tetragonal at 11GPa at room temperature.In the second part, BCTZ centimeter-sized single crystals have been successfully grown by the top seeded solution growth technique. Ca and Zr content profiles throughout the as-grown boules indicate that their effective segregation coefficients are highly dependent on their initial concentration in the liquid solution. Concentrations evolve substantially during the crystal growth, making the BCTZ crystal growth a tricky issue when a narrow compositions range is targeted, as in the vicinity of the phase convergence region. Furthermore, spinodal decomposition was observed, indicating the coexistence of two solid solutions with close compositions in BCTZ crystals. Dielectric and piezoelectric properties were measured for some crystals, which were found to display a variety of behavior form relaxor to pure ferroelectric. In addition, an abnormal double-like PE hysteresis loop was observed, that was associated to an irreversible effect disappearing upon poling

Intérêt industriel, pression politique : deux raisons majeures pour lesquelles la synthèse de couches minces piézoélectriques sans Plomb performantes est devenue un sujet de recherche important. L’objectif de ces travaux est la synthèse et la caractérisation d’un matériau prometteur : le BNT. L’élaboration de couches minces de BNT par pulvérisation cathodique rf-magnetron a été optimisée. L’étude montre qu’un recuit à 675°C sous Oxygène permet la meilleure cristallisation du BNT. Les caractérisations électriques ont mis en évidence de bonnes propriétés diélectrique, ferroélectrique et piézoélectrique. Les valeurs de polarisation et de déplacement obtenus en appliquant un champ électrique sont remarquables. Cependant, les valeurs rémanentes sont peu élevées. L’étude en température a permis de déterminer les transitions de phase et de démontrer le caractère relaxeur du BNT. Le mélange de BT avec le BNT dans une solution solide doit améliorer les performances électriques. Des courants de fuite ont provoqué l’effet inverse c'est-à-dire une dégradation des propriétés de nos couches minces
Industrial interest, political pressure: two major reasons for the synthesis of unleaded piezoelectric thin layers with high performances have become an important research topic. The objective of this work is the synthesis and characterization of a promising material: NBT. The development of NBT thin films by rf-magnetron sputtering was optimized. The study shows that annealing at 675°C under oxygen allows better crystallization of NBT. Electrical characterizations showed good dielectric, ferroelectric and piezoelectric properties. Polarization and displacement values obtained by applying an electric field are remarkable. However, values of remnant polarization are low. The temperature study was used to determine phase transitions and highlighted the relaxor character of NBT. The mixture of BT with the NBT in a solid solution should improve the electrical performances. Leakage currents caused the opposite effect, that is to say, a degradation of the properties of our thin films

A comprehensive study of domain switching process in different ferroelastic and ferroelastic/ferroelectric perovskite structured ceramics has been performed. The effects of thermal fluctuations on domain switching dynamics were investigated in the ferroelastic and in the ferroelectric case under static and dynamic electric and mechanical conditions. In the ferroelastic case, domain switching behaviour was investigated for different compositions, using different types of mechanical tests. Compression tests were carried out to characterize the ferroelastic properties, such as coercive stress, hysteresis loop and irreversible strain. Creep experiments were performed to study the domain switching time dependence at different stress levels. Domain switching kinetics during creep was characterized by implementing a rate model, based on thermal activation rate theory, which allowed the activation volume to be estimated. A Rayleigh-type analysis was performed to study the effects of stress amplitude, loading rate, temperature and composition on ferroelastic switching. Rayleigh-type relationships were proposed to fit the results and the rate model developed was applied to quantify the effect of the loading rate on the Rayleigh loops. Alternative methodologies were developed to assess the effects of rate and temperature on the coercive stress, providing original sets of data. A further application of the rate model provided an estimation of the activation parameters (volume and enthalpy). In PZT 5A at the coercive field the activation volume was calculated to be 2.44 nm3, with a reasonable consistency with the value obtained from creep tests (7.49 nm3). In the ferroelectric case, domain switching was studied by generating P-E and butterfly hysteresis loops and by analysing creep-relaxation curves. In creep experiments, the polarization and the strain were measured simultaneously, during the application of a constant electric field. An insight into the evolution of domain structure and on domain switching mechanisms was gained, highlighting analogies and differences with the ferroelastic case. Experiments at different frequencies, allowed the activation volume to be estimated at the coercive field (77 nm3). The relatively large value indicates small rate dependence and suggests a domain structure with broad and mobile domain walls, being the preferred sites for the nucleation.

Selected area and Kikuchi diraction patterns, traditional bright eld and dark eld imaging techniques in electron microscopy as well as high resolution TEM and STEM techniques, together with electron backscattered electron diraction technique have been used to study the domain structures, local crystallography and atomic structures in PZT-based materials. Reliable EBSD mapping of 90 degrees domains in a tetragonal Pb(Zrx; Ti1-x)O3 with x = 0.5 ferroelectric perovskite has been achieved for the rst time, together with reliable automated orientation determination from TEM-Kikuchi patterns. This has been used to assess the local crystallography of domains by determining misorientation angles at 90 degrees domain boundaries and thus local c/a ratios. In most cases, a good agreement is found between local c/a ratios and global measurements by X-ray diraction, but some clear discrepancies have also been found suggesting that real local variations are present, perhaps as a consequence of compositional inhomogeneities. The details of the domain structure of the incommensurate antiferroelectric struc- ture in La-doped zirconium-rich lead zirconate titanate have been revealed in detail for the rst time. The structure is dominated by 60 degrees domain boundaries close to {101} planes of the primitive perovskite cell; and tilts of the perovskite sublattice of about 0.5 degrees are also noted at such boundaries consistent with a small tetragonal distortion of the primitive cell. Within each domain a streaked nanostructure is revealed under weak diraction conditions perpendicular to the long b-axis of the incommensurate supercell, which appears to be a consequence of planar faulting perpendicular to this b-axis. 90 degrees domain boundaries are also observed but are less frequent than 60 degrees boundaries and in con- trast to previous reports, these often have rather curved and irregular boundary planes. The atomic arrangement of these 90 degrees boundaries was studied by aberration corrected HRSTEM. Dierent stackings and periodicities were identied.

In this project, the ferroelectric materials Pr2Ti2O7, La2Ti2O7, Sr2Nb2O7, La2-xCexTi2O7 (x=0.15, 0.25, 0.35), Nd2-xCexTi2O7 (x=0.05, 0.25, 0.5, 0.75) and Sr2-xBaxNb2O7 (x=0.1, 0.2, 0.3, 0.4, 0.5) were investigated. They have a provskite-like layered structure (PLS), and are well known for their super-high Curie points (>1200 ˚C). Their ceramics were fabricated using Spark Plasma Sintering. For Pr2Ti2O7, single phase, dense and textured ceramics were prepared. The Curie point is greater than 1560 °C which is the highest known Curie Point so far for ferroelectric materials. Pr2Ti2O7 was shown for the first time to be ferroelectric because it showed piezoelectric activity after poling. For the La2-xCexTi2O7 solid solution system, the ferroelectric and dielectric properties of cerium (Ce) substituted La2Ti2O7 (LTO) were investigated. The solubility limit of Ce in La2-xCexTi2O7 was found to be between 0.35 and 0.5 supported by XRD results. The a-, b- and c-axes of the unit cell decrease with increasing Ce substitution. The Curie points (Tc) of La2-xCexTi2O7 (x=0, 0.15, 0.25, 0.35) also decreases. The dielectric constant and loss increase with increasing Ce substitution. Electrical resistivity decreases due to Ce substitution. Cerium can increase the d33 of La2Ti2O7. The highest d33 was 3.9 ± 0.1pC/N for La1.85Ce0.15Ti2O7. In the Nd2-xCexTi2O7 system, the cell volume increases from Nd2Ti2O7 to Nd1.25Ce0.75Ti2O7 and the Curie point (Tc) decreases with Ce increase. For the Sr2-xBaxNb2O7 solid solution system, the effect of Ba substitution on the structure and ferroelectric properties of Sr2-xBaxNb2O7 (x<1.0) was investigated. The a-, b-, c- axes and cell volume increase with Ba addition because Ba2+ is a relatively large ion. A atomic displace move model was developed to explain the spontaneous lattice strain, spontaneous polarization and Curie point change in the orthorhombic phase (Cmc21) with increasing Ba substitution. The critical point of Sr2-xBaxNb2O7 solid solution (x < 0.6) was determined by XRD and was supported by the XPS spectra of Ba 2p and O 1s. Textured ceramics of Sr2-xBaxNb2O7 compounds were prepared using the spark plasma sintering technique and the piezoelectric activity can be improved by Ba substitution, which increases the domain switch mobility. The highest d33 was measured as 3.6±0.1pC/N for Sr1.8Ba0.2Nb2O7. The thermal depoling behaviors of La2Ti2O7, and Sr2Nb2O7 were investigated due to their relatively high d33 piezoelectric constant and high Curie point. Both of them have a high resistance to thermal depoling, especially La2Ti2O7. Ginzburg - Landau theory was used to explain their behavior. The electric resistivity degradation of Sr2Nb2O7 was studied at different temperatures, and it was found to be stable below 800 °C.

This work deals with the structural and dielectric properties of Bariumtitanate (BTO) / Strontiumtitanate (STO) superlattices. The investigations were carried during the research for a doctoral thesis on the IFW Dresden, Institute for Metallic Materials (under supervision of Prof. Schulz). These multilayers have been prepared on single crystalline STO of (100) and (111) orientated substrates. All films where grown in an epitaxial mode. Additional superlattices and Bariumstrontiumtitanate (BSTO) thin films on silicon substrates with platinum bottom electrodes have been prepared. Thereby, (111) fibre-textured polycrystalline superlattices were produced. According to our knowledge this result was achieved for the first time (is unique in the world at the moment). According to high resolution TEM investigations of (001) oriented superlattices multilayers with atomically thin interfaces without noticeable interdiffusion have been prepared. XRD pattern of a multilayer consisting of BTO and STO monolayers that have only a thickness adequate one unit cell of BTO respective STO confirm this assumption. Multilayers on (111) oriented STO substrates show a much higher interface roughness than (001) orientated films. Regarding to the examinations in this thesis it is suggested that the roughness is correlated with the reduction of internal stresses by deformation of the stack and not with interdiffusion between the monolayers. For electrical measurements the film thickness has been varied from 30 nm to 300 nm and the periodicity in the range from 0.8 nm to 20 nm. Additionally, BSTO films of equivalent thickness and integral chemical composition were produced. Dielectical measurements were carried out in the temperature range from 20 K to 600 K and hysteresis measurements were done. It has to be pointed out, that multilayers have always lower dielectrical performances then BSTO films. In all cases the dielectric constant (DC) decreases with decreasing film thickness. Multilayers of a small periodicity show the highest DC?s, decreasing with increasing monolayer thickness in all cases. The maximum of DC shifted with decreasing film thickness to higher temperatures thus correlating with an increase of the out of plane lattice parameter. In this paper the mismatch between the stack respectivly the BSTO layers and the substrate has widely been discussed. In the case of BSTO the dielectric data can be qualitatively explained with the theory of strained films, developed mainly by Pertsev, under the assumption of a strain gradient in the thin film. Strain effects do also play an important role in ferroelectric multilayers as well as size and coupling effects between the monolayers. An adequate theory for the description of the dielectric behaviour of the ferroelectric superlattice produced during this research does yet not exist. Some thesis where pointed out, which effects have to be essentially included in to a consistent theory of ferroelectric multilayer. Some practical tips are also given, how to prepare monolayers and superlattices with very high DC and exellent hysteretic behaviour
Es wurden (001) und (111) orientierte symmetrische BTO/STO-Multilagen auf niobdotierten STO-Einkristallen abgeschieden. Hierbei wurde sowohl die Gesamtschichtdicke, als auch deren Periodizität variiert. Zum Vergleich wurden weiterhin Ba0.5Sr0.5TiO3-Mischschichten unterschiedlicher Dicke präpariert. Aus den HRTEM und XRD Untersuchungen kann geschlossen werden, dass alle erhaltenen Schichten sowohl phasenrein als auch perfekt biaxial texturiert sind. Im Falle der (001) orientierten Multilagen konnten atomar scharfe Grenzflächen zwischen Einzellagen erhalten werden, wobei sich die Einzellagendicke bis auf eine Monolage (0.4 nm) reduzieren lässt. Aus der Schichtdickenabhängigkeit von d(001), dem mittleren out-of-plane Gitterparameter der Schicht, wird geschlossen, dass die Schichten auf den STO-Einkristallen Spannungsgradienten in den Schicht-normalen besitzen und an der Grenzfläche zum Substrat am stärksten verspannt sind. Die (111) orientierten Multilagen auf den STO-Einkristallen zeigen gegenüber den Schichten auf den (100) orientierten STO-Einkristallen eine deutlich erhöhte Interfacerauhigkeit. Vermutet wird, dass dies einerseits durch die andere kristallographische Orientierung der Wachstumsnormalen bedingt ist, weil damit jeweils keine geschlossenen SrO- bzw. BaO- und TiO3-Lagen ausgebildet werden. Andererseits zeigen die TEM-Aufnahmen eine deutliche Zunahme der Welligkeit der Einzellagen mit wachsendem Abstand vom Substrat, die rein mechanischen Effekten zugeschrieben wird. Die Verwölbung der Einzellagen könnte damit der Reduzierung der mechanischen Energie innerhalb des Systems dienen, wobei die Netzebenen dem Verlauf der Einzellagen folgen. Auf platinbeschichteten Siliziumsubstraten konnten erstmals phasenreine (111) fasertexturierte Mischschichten und BTO/STO-Multilagen abgeschieden werden. Grundlage hierfür war die Optimierung des Pt/Ti/SiO2/Si Schichtsystems hinsichtlich seiner thermischen Stabilität bis zu 800°C. Die Textur der Schichten wird von der Platingrundelektrode übernommen und deren Rauhigkeit teilweise verstärkt. Eine mechanische Verwölbung der Einzellagen konnte hier nicht beobachtet werden. Für die elektrischen Messungen wurden auf allen Schichten etwa 50 nm dicke Platinelektroden durch eine Hartmaske mittels Elektronenstrahlverdampfung im Hochvakuum bei etwa 300°C aufgebracht. Anschließend wurden die Schichten an Luft getempert, um das Sauerstoffdefizit, dass sich bei der Elektrodenabscheidung einstellt, auszugleichen. Die elektrischen Messungen zeichnen sich durch den sehr großen untersuchten Temperaturbereich aus. Temperaturabhängige Messungen im Bereich von 30-600 K finden sich für ferroelektrische Dünnschichten sehr selten in der Literatur und stellen für BTO/STO-Multilagen ein Novum dar. Auch die biasabhängige und teilweise auch temperaturabhängige Messung der Kapazität der Multilagen (C-V-Messungen) ist bisher einmalig. Durch die temperaturabhängigen Hysteresemessungen wurden Einblicke in den elektrischen Polungszustand der Schichten erhalten. Dadurch wird eine sinnvolle Interpretation der &amp;#949;(T)-Kurven erst möglich. Der Vorteil der Integration des Polarisationsstromes unter Verwendung einer Dreieckspannung als Messsignal besteht in der direkten physikalischen Aussage der Strom-Spannungskurven über die Schaltspannung der Schichten

The projects described in this thesis set out to investigate structure-property relationships in perovskite-type oxides containing Bi3+ and d0 transition metal cations. The investigation began by characterising the long-range average crystal structures of the perovskite solid-solution K0.5Bi0.5Ti1-xZrxO3, 0 ≤ x ≤ 1. The high-temperature tetragonal-cubic phase transition for x = 0 was tracked using in situ synchrotron X-ray diffraction, which showed relaxor behaviour. X-ray absorption spectroscopy showed that increasing x pushes Zr cations to higher symmetry environments while leaving the symmetry of the Ti cations unaffected. The investigation was extended to the n = 4 Ruddlesden-Popper layered perovskite K2.5Bi2.5Ti4O13, which transforms from a body-centered unit cell to a primitive unit cell upon hydration. Ab initio geometry optimisation calculations and molecular dynamics simulations determined the water molecules to be in a vertical “pillared” orientation between the perovskite-type layers where water rotations increased in radius with increasing temperature. Quasielastic neutron scattering experiments showed two H-motions at 300 K; a relatively slow rotation about the stacking axis, and a faster oscillation parallel to the stacking axis. . The final study is of Sillén-Aurivillius phases, Bi3A2Nb2O11X, A = Pb/Sr and X = Cl/Br. Rietveld refinements against X-ray and neutron powder diffraction data showed a significant contraction parallel to the stacking axis upon replacing Pb with Sr. This was attributed to the decrease in the concentration of stereochemically active 6s2 lone pairs of Bi3+/Pb2+ in the [BiAO2]2+ layer, leading to a less rigid structure. X-ray absorption spectroscopy showed that these substitutions had indirectly increased the symmetry of the Nb cations. From this series of projects, we have shown that cation size effects, intercalation, structural dynamics and lattice matching play an important role in the chemical design of new layered oxides.

Nanoscale characterization of the piezoelectric and polarization related properties of III-Nitrides by piezoresponse force microscopy (PFM), electrostatic force microscopy (EFM) and scanning Kelvin probe microscopy (SKPM) resulted in the measurement of piezoelectric constants, surface charge and surface potential. Photo-electron emission microscopy (PEEM) was used to determine the local electronic band structure of a GaN-based lateral polarity heterostructure (GaN-LPH). Nanoscale characterization of the imprint and switching behavior of ferroelectric thin films by PFM resulted in the observation of domain pinning, while nanoscale characterization of the spatial variations in the imprint and switching behavior of integrated (111)-oriented PZT-based ferroelectric random access memory (FRAM) capacitors by PFM have revealed a significant difference in imprint and switching behavior between the inner and outer parts of capacitors. The inner regions of the capacitors are typically negatively imprinted and consequently tend to switch back after being poled by a positive bias, while regions at the edge of the capacitors tend to exhibit more symmetric hysteresis behavior. Evidence was obtained indicating that mechanical stress conditions in the central regions of the capacitors can lead to incomplete switching. A combination of vertical and lateral piezoresponse force microscopy (VPFM and LPFM, respectively) has been used to map the out-of-plane and in-plane polarization distribution, respectively, of integrated (111)-oriented PZT-based capacitors, which revealed poled capacitors are in a polydomain state.

The characteristic polarization response of a ferroelectric material to an applied electric field enables a binary state device in the form of a thin film ferroelectric capacitor that can be used to store digital information. In a high density memory the capacitor is placed on the top of a poly-silicon plug which is connected to the drain of a transistor. Such a configuration poses constraints on the processing conditions of the ferroelectric capacitor in addition to the already existing reliability issues of a ferroelectric capacitor. The current research is an attempt to integrate the ferroelectric capacitor directly into a high density memory structure. Pb_1.1Zr_0.53Ti_0.47O₃ (PZT) and SrBi₂Ta₂O₉ (SBT) are two most promising materials for ferroelectric memory applications. PZT has excellent ferroelectric properties with wide operating temperature range. However, PZT exhibits a considerable loss of switchable polarization with cumulative switching cycles. This phenomenon is known as fatigue and is one of the critical problems affecting the life time of ferroelectric memories. In this research, Ir based electrodes are shown to improve fatigue characteristics of PZT based capacitors not only by enhancing a homogenous growth of perovskite phase of PZT but also by lowering the entrapment of oxygen vacancies at the interface. These Ir electrodes also acted as diffusion barriers for silicon, oxygen and lead. Additionally, Ir electrodes were found to be chemically stable at the processing temperatures of PZT capacitors. These features of Ir based electrodes could help in realization of a practical PZT based high density non volatile random access memories. SBT is an another promising ferroelectric material for ferroelectric memory applications. While SBT has a fatigue free nature, it has a very high processing temperature (>800 °C). Such a high processing temperature limits the choice of electrodes that could be used to integrate the ferroelectric capacitor into the high density memory structure. In this research, an attempt is made to lower the processing temperature and suitable electrodes are chosen accordingly, to enable the integration of SBT based capacitors into high density memories. Lowering the processing temperature was obtained by growing a-b oriented SBT crystallites rather than c-axis oriented crystallites. Additionally, reliability (degradation) and yield of SBT thin film capacitors was found to be correlated to the amount of segregated bismuth oxide in the films. Elimination of secondary phase bismuth oxide was found to result in dramatic improvement in the reproducibility of SBT thin films with a processing temperature close to 750 °C. PtRh based electrodes were found to be quite suitable for integrating SBT capacitors into high density memory structures. These electrodes could withstand a processing temperature of 750 °C while preventing the interdiffusion of silicon, oxygen and bismuth. A solid solution of SBT and Bi₃TiNbO₉ (BTN) is made which reduced the processing temperature of the capacitor material from 750 °C to 650 °C while retaining the excellent fatigue and retention characteristics of SBT.
Ph. D.

Doutoramento em Ciência e Engenharia de Materiais
Impulsionado pelo interesse em conhecer as propriedades intrínsecas dos compostos SrBi2Ta2O9 (SBT) e SrBi2Nb2O9 (SBN) que se apresentam como os materiais mais promissores para substituir o titanato de zircónio e de chumbo (PZT) nas memórias ferroeléctricas de acesso aleatório, surgiu a necessidade de monocristais destes compostos com dimensões e qualidade adequadas à medição de propriedades. No presente trabalho, fizeram-se crescer cristais simples de SBT e de SBN com qualidade e dimensões elevadas, usando um método de solução a alta temperatura, com um fluxo de Bi2O3 modificado com B2O3 e uma razão molar de 60/40 entre SBT (ou SBN) e fluxo (35 % em peso de Bi2O3 e 5 % em peso de B2O3). Primeiramente optimizaram-se as condições de processamento, testando-se diferentes perfis de temperatura para promover o crescimento e melhorar a qualidade dos cristais de SBT. As condições identificadas como óptimas foram usadas para fazer crescer cristais de SBN. Os cristais obtidos evidenciaram um hábito lamelar com morfologia de plaquetas com dimensões típicas de ∼ 7 × 5 × 0.2 e 5 × 5 × 0.4 mm3 para SBT e SBN, respectivamente. De acordo com as análises de topografia e de difracção de raios-X, ambos os cristais se apresentaram naturalmente orientados com a direcção [001] (eixo c) perpendicular à face de maior área do cristal e lados paralelos à direcção [110] da fase ortorrômbica (inclinação de 45º relativamente a ambos os eixos a e b). As primeiras medidas fiáveis sobre estrutura de domínios de cristais de SBT de boa qualidade foram realizadas no presente trabalho por microscopia de força piezoeléctrica. Ambos os domínios ferroeléctricos de 180º e ferroelásticos de 90º foram observados à temperatura ambiente após tratamento térmico dos cristais a 750 ºC, durante 10 horas. Os domínios apresentaram uma estrutura em “espinha” com paredes de domínios de 90º predominantemente planas. As paredes de domínios de 90º mostraram-se paralelas às arestas laterais do cristal [110], o que se coaduna com a orientação preferencial observada. A largura dos domínios de 90º situa-se entre 0,7 e 1,5 μm ao passo que a dos domínios de 180º varia entre 250 e 500 nm. A formação deste complexo padrão de domínios é atribuída a um processo de transição de fases em duas etapas, ou seja, a ocorrência não simultânea das transições de fase ferroelástica e ferroelétrica em SBT. A qualidade dos cristais de SBT e SBN foi também confirmada por medidas diélectricas, ferroelétricas e piezoeléctricas realizadas paralelamente ao eixo c (direcção [001]) e paralelamente ao plano ab (segundo a direcção [110]) demonstrando-se a elevada anisotropia das propriedades intrínsecas de ambos os cristais, i.e., a razão entre o valor médio de permitividade dieléctrica medida paralelamente ao plano ab e o valor medido paralelamente ao eixo c foi de cerca de 10 à temperatura de Curie, TC, diminuindo para 2 à temperatura ambiente. As baixas perdas dieléctricas acima e abaixo de TC (tanδ < 0.04) indicaram uma baixa concentração de defeitos nos cristais. Observaram-se ciclos de histerese saturados quando se aplicou um campo eléctrico alterno paralelamente ao plano ab do cristal SBT. A polarização espontânea segundo o eixo ferroeléctrico a foi estimada em cerca de ≈ 20 μC/cm2 para o SBT. Porém, no caso dos cristais de SBN, não foi possível obter ciclos de histerese saturados mesmo aplicando um campo eléctrico com o valor máximo de 100 kV/cm. O coeficiente piezoeléctrico d33 medido segundo a direcção [100] (eixo polar) é de ≈ 30 e de 62 pm/V para o SBT e o SBN, respectivamente. Os materiais ferroeléctricos com estrutura em camadas de bismuto (compostos BLSF) apresentam grande interesse para aplicações piezoeléctricas de elevada temperatura embora seja necessário prepará-los na forma texturizada devido à sua elevada anisotropia. O presente trabalho estuda a possibilidade de usar os cristais de SBT como sementes para induzir a texturização de cerâmicos de SBT pela via de template grain growth (TGG). Produziram-se cerâmicos de SBT texturizados com propriedades dieléctricas e ferroeléctricas melhoradas, usando sementes anisométricas e de morfologia lamelar, com tamanho médio de ~ 40 × 40 × 8 μm3. Dispersou-se uma pequena quantidade de sementes anisométricas de SBT numa matrix de partículas finas de SBT contendo um excesso de Bi2O3 para formar fase líquida e alinharam-se essas sementes por prensagem unidireccional. Avaliaram-se os efeitos de vários parâmetros de processamento tais como o excesso de Bi2O3, as sementes de SBT, as condições de prensagem e de sinterização, tentando obter-se cerâmicos densos, com elevada textura e propriedades melhoradas. Correlacionou-se a evolução da microestructura dos cerâmicos com as condições de processamento recorrendo a uma análise estereológica. Demonstrou-se a existência de anisotropia nas propriedades dieléctricas e no ciclo de histerese e a sua dependência do grau de textura. Mediram-se propriedades dieléctricas e ferroeléctricas melhoradas segunda uma direcção perpendicular à da prensagem unidirecional, observando-se valores de permitividade e de polarização acima dos apresentados pelos cerâmicos sem sementes. Mostrou-se que esta melhoria de propriedades resultou da orientação do grão, da anisotropia de propriedades dos monocristais e do grau de textura dos cerâmicos. Apresentou-se um modelo para descrever a polarização espontânea máxima de cerâmicos de SBT com orientação de grão aleatória ou com textura, em função do grau de textura, usando uma análise de textura baseada na distribuição da orientação dos grãos grandes e anisométricos. Seleccionou-se a equação de March-Dollase para descrever os dados experimentais referentes à distribuição de orientação e discutiu-se a distribuição espacial do vector polarização em grãos lamelares de materiais BLSF. A aplicação do referido modelo aos cerâmicos texturizados de SBT permitiu a comparação dos valores de polarização espontânea previstos pelo modelo com os valores experimentais obtidos a partir do ciclo de histerese ferroeléctrica dos mesmos cerâmicos.
The interest in the understanding of the intrinsic properties of SrBi2Ta2O9 (SBT) and SrBi2Nb2O9 (SBN), which are the most promising materials for substituting lead zirconate titanate in non-volatile ferroelectric random access memories, arouse the need of single crystals of these compounds with suitable size and quality for the properties measurement. In this work, high-quality SBT and SBN single crystals were successfully grown by a high-temperature selfflux solution method, using a B2O3 modified Bi2O3 flux and a molar ratio of 60/40 of SBT (or SBN) powder to flux (35 wt% Bi2O3 and 5 wt% B2O3). The processing conditions were optimized by testing different thermal profiles to increase the size and improve the quality of the grown SBT crystals. The optimized conditions were then applied for the growth of SBN crystals. The grown crystals showed a layered habit with a platelet morphology and typical sizes of ∼ 7 × 5 × 0.2 and 5 × 5 × 0.4 mm3 for SBT and SBN, respectively. According to x-ray diffraction and topography analyses, both crystals were naturally oriented with [001] direction (c-axis) perpendicular to the major face and edges parallel to [110] direction (45º to both a- and b-axes) of the orthorhombic phase. The first reliable measurements of the domain structure of high-quality SBT single crystals were performed in this work by piezoelectric force microscopy. Both ferroelectric 180º domains and ferroelastic 90º domains (twins) were revealed at room temperature after annealing the crystals at 750 ºC for 10 h. The coexisting domains form a well-defined “herringbone” structure with mostly flat 90º walls. The ferroelastic 90º walls were parallel to the single crystal edges [110], which agree with the observed preferential orientation. The width of 90º domains (twins) lies in the range of 0.7 - 1.5 μm, while that of 180º domains, which were oriented parallel to the [100] direction (polar axis), exhibited a periodicity of about 250 to 500 nm. Formation of the observed complex domain pattern was attributed to a two-stage process associated with the presence of separate ferroelastic and ferroelectric phase transitions in SBT. The high quality of the grown SBT and SBN single crystals was confirmed by dielectric, ferroelectric and piezoelectric measurements, which were performed in the ab-plane (along the [110] direction) and along the c-axis (the [001] direction), demonstrating the large anisotropy in the intrinsic properties of both crystals, i.e., the ratio between average permittivity along the [110] (ab-plane) and the [001] direction (c-axis) was about 10 at TC and decreased to ~ 2 at room temperature. The low dielectric losses above and below TC (tanδ < 0.04) indicate a low concentration of defects in the crystals. Saturated hysteresis loops were observed for switching in the ab-plane of the SBT single crystal and the spontaneous polarization along the ferroelectric a-axis was estimated to be PS ≈ 20 μC/cm2 for SBT. However, for SBN crystals, saturated hysteresis loops were not obtained for a maximum electric field of 100 kV/cm. The longitudinal piezoelectric coefficient d33 was measured along the [100] direction (polar-axis) in both crystals, and was estimated as ≈ 30 and 62 pm/V for SBT and SBN, respectively. Bi-layer structured ferroelectric (BLSF) materials like SBT present significant interest for high-temperature piezoelectric applications, though they are required to be prepared in a textured form due to their high anisotropy. This work studies the possibility of using the grown SBT crystals as seeds for the fabrication of textured SBT ceramics by templated grain growth (TGG). Seeded SBT ceramics with improved dielectric and ferroelectric properties were produced by using plate-like anisometric SBT templates with average sizes of ~ 40 × 40 × 8 μm3. A small amount of the anisometric SBT templates was distributed in a fine-grained matrix of SBT powder containing Bi2O3 excess as liquid phase, and then aligned by conventional uniaxial pressing. Several processing parameters, e.g., the Bi2O3 excess, the amount of templates, or the processing and sintering conditions including the uniaxial pressure, the sintering temperature and time, were examined in order to produce textured SBT ceramics with enhanced properties. The ceramics microstructure evolution was correlated with the processing parameters via a stereological analysis. Anisotropy in the dielectric and ferroelectric properties of the seeded SBT specimens and its dependence on the degree of texture were demonstrated. Enhanced properties were measured perpendicularly to the uniaxial pressing direction revealing permittivity and polarization values above those of unseeded SBT ceramics. Such improved properties were shown to result from the grain orientation, anisotropy of single crystal properties, and degree of texture of the sintered ceramics. A quantitative model was presented for predicting the maximum spontaneous polarization, PS, of randomly oriented and textured SBT ceramics as a function of the degree of texture, using a texture analysis accomplished via the orientation distribution of large anisometric grains. The March-Dollase equation was selected to fit the measured orientation distribution, and the spatial distribution of polarization vector in platelet grains of BLSF materials was discussed. The results were applied to the case of textured SBT ceramics, and the predicted PS values as a function of the degree of texture were compared with those measured from the hysteresis loops.
FCT - SFRH/BD/6619/2001

Nuclear magnetic resonance (NMR) spectroscopy is one of the most important experimental probes of local atomistic structure, chemical ordering, and dynamics. Recently, NMR has increasingly been used to study complex ferroelectric perovskite alloys, where spectra can be difficult to interpret. First-principles calculations of NMR spectra can greatly assist in this task. In this work, oxygen, titanium, and niobium NMR chemical shielding tensors, s&d4; , were calculated with first-principles methods for ferroelectric transition metal prototypical ABO3 perovskites [SrTiO3, BaTiO 3, PbTiO3 and PbZrO3] and A(B,B')O3 perovskite alloys Pb(Zr1/2Ti1/2)O3 (PZT) and Pb(Mg1/3Nb2/3)O3 (PMN). The principal findings are 1) a large anisotropy between deshielded sigma xx(O) ≃ sigmayy(O) and shielded sigma zz(O) components; 2) a nearly linear dependence on nearest-distance transition-metal/oxygen bond length, rs, was found for both isotropic deltaiso(O) and axial deltaax(O) chemical shifts ( d&d4;=s&d4; reference- s&d4; ), across all the systems studied, with deltaiso(O) varying by ≃ 400 ppm; 3) the demonstration that the anisotropy and linear variation arise from large paramagnetic contributions to sigmaxx(O) and sigmayy(O), due to virtual transitions between O(2p) and unoccupied B(nd) states. Using these results, an argument against Ti clustering in PZT, as conjectured from recent 17O NMR magic-angle-spinning measurements, is made. The linear dependence of the chemical shifts on rs provides a scale for determining transition-metal/oxygen bond lengths from experimental 17O NMR spectra. as such, it can be used to assess the degree of local tetragonality in perovskite solid solutions for piezoelectric applications. Results for transition metal atoms show less structural sensitivity, compared to 17O NMR, in homovalent B-site materials, but could be more useful in heterovalent B-site perovskite alloys. This work shows that both 17O and B-site NMR spectroscopy, coupled with first principles calculations, can be an especially useful probe of local structure in complex perovskite alloys.

Dans ce travail, nous avons étudié la croissance de films d’oxydes Bi2FeCrO6 (BFCO) en utilisant les techniques de sol-gel et dépôt par laser pulsé (PLD). Dans le cas de la voie chimique, des précurseurs en solution ont été préparés, puis déposés par centrifugation sur des substrats de silicium (100) ou de quartz. Les nombreuses analyses structurelles (DRX) et d'imagerie (SEM, TEM) effectuées sur ces films BFCO ont montré que les films sont assez homogènes mais présentent de nombreuses phases parasites qui peuvent être éliminés partiellement par recuit thermique rapide. Des dispositifs tests à base de films BFCO par sol-gel ont été préparés et qui ont montré des propriétés électriques limitées à cause des nombreux défauts. Des films BFCO ont également été produits par la technique PLD sur des substrats STO et NbSTO. Les propriétés structurelles, optiques et électriques sont présentées. La diffusion épitaxiale de haute qualité et les films en phase pure sont démontrés par diffraction des rayons X. Nous avons étudié l'évolution de paramètres tels que la bande interdite en fonction des conditions de croissance, montrant qu'elle peut être ajustée de 1, 9 à 2,6 eV. Ce comportement a été corroboré par des calculs théoriques sur l’arrangement atomique dans la structure BFCO. Les propriétés ferroélectriques sont étudiées par microscopie à force piézoélectrique. La lumière s'est avérée avoir un effet sur la polarisation. Il a également été démontré que la mémoire de la polarisation affecte la réponse photovoltaïque. Enfin, des dispositifs basés sur BFCO sont fabriqués et leurs propriétés photovoltaïques sont analysées. Des valeurs de tension de circuit ouvert de 600mV sont encourageantes pour la nouvelle génération de cellules solaires
In this work, we have produced Bi2FeCrO6 oxides (BFCO) by sol-gel technique and pulsed laser deposition (PLD). By sol-gel, precursors in solution were prepared, which are then deposited by centrifugation on silicon or quartz substrates. The numerous structural (XRD) and optical images (SEM, TEM) analyses carried out on these BFCO films show that the films are fairly homogeneous but exhibit many parasitic phases, which they can be partly eliminated by rapid thermal annealing. Finally, we present the first results obtained on BFCO-SG perovskite devices. On the other hand, BFCO films were deposited on STO and Nb:STO substrates. Their structural, optical and electrical properties are presented. High-quality epitaxial growth and pure-phase films are demonstrated by X-ray diffraction. We show that the band gap of the PLD-BFCO films can be tuned from 1, 9 to 2.6 eV thanks to the variation of growth conditions. Theoretical calculations has confirmed the observed behavior and highlight the importance of the ordering phase. The ferroelectric properties of the PLD films are studied by the piezoresponse force microscopy. Illumination is shown to have a strong effect on polarization. We show that the polarization memory affects the photovoltaic response. Finally, devices based on BFCO are manufactured and their photovoltaic properties are analyzed

In this dissertation, BaTiO3 nanocrystals, Bi4Ti3O12 nanostructured microspheres, and cosubstituted Bi4Ti3O12 nanoparticles and ceramics were prepared using solvothermal, hydrothermal and citrate-gel methods. The ferroelectric properties of the prepared cosubstituted Bi4Ti3O12 ceramics were studied using P–E hysteresis loop, leakage, and polarization fatigue measurements. A two-phase solvothermal synthesis approach for the preparation of hydrophobic BaTiO3 nanocrystals was developed. The two-phase method is based on the growth of nanocrystals at the oil/water interface by the reaction between metal surfactant complexes in the oil phase and a mineralizer in the water phase. Three kind of organic solvents, hexadecene, toluene, and heptane were used as the oil phase and compared to each other with respect to the product quality. The BaTiO3 particles are crystalline with a mean size of 3.7 nm and can be dispersed in a variety of organic solvents forming highly transparent dispersions. A hydrothermal method was developed for the synthesis of Bi4Ti3O12 nanostructured microspheres consisting of granular nanoparticles and nano-platelets. The precursor powder was prepared using a diethylene glycol mediated coprecipitation method. Tailoring of the morphology was achieved by changing the precursor quantity, sodium hydroxide concentration, and reaction time. The formation mechanism of the nanostructured microspheres probably involves aggregation, followed by dissolution and recrystallization. Bi3.25Pr0.75Ti2.97V0.03O12 (BPTV) and Bi3.25La0.75Ti3-xMxO12, (BLTMx, M = Mo, W, Nb, V, x = 0.0–0.12) ferroelectric nanoparticles and ceramics were synthesized using a modified citrate-gel method that has a crystallization temperature as low as 450 °C. The synthesized nanoparticles were spherical ranging from 30 to 100 nm. Except Nb5+, other donor cations were introduced using the corresponding oxides that have advantages in terms of high purity, low cost, and availability. The Bi3.25Pr0.75Ti2.97V0.03O12 ceramic is orthorhombic and its 2Pr and 2Ec values measured at 300 kV/cm were 35 μC/cm2 and 148 kV/cm respectively. The texture, microstructure, and ferroelectric properties of the prepared Bi3.25La0.75Ti3-xMxO12, (BLTMx, M = Mo, W, Nb, V, x = 0.0–0.12) ceramics depend on x. The maximum 2Pr (30–32 μC cm−2) was achieved at an optimum cosubstitution level (x = 0.025 for M6+, x = 0.03 for M5+). The high remanent polarization, low leakage current, and low polarization fatigue render the prepared ceramics promising for practical applications.

Les solutions solides (1-x)Na0,5Bi0,5TiO3 (NBT) – xCaTiO3 (CT) ont été étudiées par diffraction des rayons X, spectroscopie Raman, microscopie électronique à balayage, spectroscopie d’impédance et DSC. Ce sont des matériaux présentant la structure cristalline pérovskite. L’étude révèle la complexité mais aussi la richesse des phénomènes physiques dans cette famille de composés : les séquences des transitions de phases, l’influence du dopant Ca2+ sur les propriétés physico-chimiques du matériau, la relation étroite entre propriétés diélectriques et caractéristiques structurales. Des solutions solides (1-x)NBT – xCT, avec 0 ≤ x ≤ 1,00, ont été synthétisées par voie solide classique puis frittées selon une procédure spécifique dans un milieu confiné pour éviter toute perte de sodium et de bismuth. Les caractéristiques cristallines des solides obtenus imposent clairement de distinguer trois domaines suivant les valeurs de x. En effet, pour les valeurs croissantes de x et à la température ambiante, on observe un premier domaine (Région I, pour x ≤ 0,07) dans lequel le solide obtenu est une solution solide de structure cristalline, de groupe d’espace R3c, identique à celle de NBT pur. Pour les valeurs les plus élevées de x (Région II, pour x ≥ 0,15), le solide obtenu est une solution solide de structure cristalline, de groupe d’espace Pnma, identique à celle de CT pur. Enfin, entre ces deux domaines (Région III, 0,09 ≤ x ≤ 0,13), les solides obtenus sont biphasés, R3c + Pnma, en se limitant aux appellations des groupes d’espacé des phases formées. Dans la région I, lors du chauffage, la séquence des transitions de phases R3c → P4bm → Pm3m est mise en évidence; les températures des transitions se déplacent vers les plus basses températures quand la concentration en Ca2+ augmente. Les solides sont ferroélectriques à l’ambiante puis développent un caractère relaxeur, par coexistence de deux phases, avec l’augmentation de la température. Dans la région II, les solides révèlent un comportement relaxeur dès l’ambiante. Une transition de phase diffuse au sein de la phase orthorhombique Pnma est toutefois mise en évidence ; le solide passe d’un état relaxeur à un état paraélectrique tout en conservant, a priori, la même structure cristalline. Le phénomène de relaxation dans ces composés est expliqué par la formation de micros ou nanorégions polaires. La région III, quant à elle, est caractérisée par l’apparition d’une hystérésis thermique mise en évidence pour la première fois ; elle est expliquée par la relation entre la microstructure cristalline et les propriétés diélectriques. Enfin, l’ensemble de nos résultats a été regroupé dans un diagramme de phase original en composition et en température
The solid solutions (1-x)Na0,5Bi0,5TiO3 (NBT) – xCaTiO3 (CT) were studied by X-ray diffraction, Raman spectroscopy, scanning electron microscopy, impedance spectroscopy and DSC. These materials have a perovskite crystalline structure. This study reveals not only the complexity but also the richness of physical phenomena in these compounds: phases transitions sequences, the Ca2+ effect on the physical-chemistry properties and the relation between dielectric properties and crystalline structure. Thereby, (1-x)NBT – xCT solid solutions (0 ≤ x ≤ 1.00) were synthesized by chemical solid route, then they were sintered by a particular procedure in order to avoid sodium and bismuth volatilization. The solid crystalline characteristics obtained prove clearly the necessity to distinguish three fields as a function of x values. First of all, for increasing x at room temperature, there is a first region so called region I (x ≤ 0.07), wherein the crystalline structure of solid solutions obtained has a space group R3c identical to that of pure NBT. For the highest values of x, (Region II, x ≥ 0.15), the solid obtained has a space group Pnma, identical to that of pure CT. Finally, between these two regions, (0.09 ≤ x ≤ 0.13), the solid solutions obtained are biphasic, R3c + Pnma, limited to appellations of the space groups formed phases. In region I, upon heating, phase transition sequence R3c → R3c + Pnma → Pnma was determined; the corresponding transition temperatures move to low values with increasing Ca2+ concentration. These solids are ferroelectric at room temperature and then develop a relaxor character, by coexistence of two phases, with increasing temperature. In region II, these solids reveal a relaxor behavior at room temperature. However, a diffuse phase transition within the orthorhombic phase Pnma has been identified; the solid changes from relaxor to paraelectric while maintaining the same crystal structure. This phenomenon was explained by the formation of micro or nano-polar regions. Region III, demonstrated for the first time, is characterized by thermal hysteresis, and explained by the relation between crystalline microstructure and dielectric properties. Finally, all our results were assembled in an original phase diagram as a function of concentration of Ca2+ dopant and temperature

Orientador: Eudes Borges de Araújo
Banca: João Carlos Silos Moraes
Banca: Adolfo Franco Júnior
Resumo: O presente trabalho descreve os estudos realizados para a síntese de filmes ferroelétricos ultrafinos de Pb(Mg1/3Nb2/3)O3 (PMN) e o estudo sistemático da cinética de cristalização deste material visando a obtenção de filmes monofásicos. Os filmes foram produzidos a partir da modificação de um método químico baseado em precursores óxidos. A obtenção dos filmes de PMN se deu através de uma técnica de duplo estágio, que possibilita maior controle na supressão de fases pirocloro, e da técnica via Método dos Precursores Óxidos (MPO), através da reação direta dos óxidos. Filmes de PMN foram preparados sobre substratos Si(100) com diferentes números de deposições. Esses filmes foram submetidos a tratamentos térmicos entre 400oC e 800ºC, em forno convencional, sob diferentes condições de preparo. A estrutura dos filmes foi investigada pela técnica de difração de raios-X e refinamentos da estrutura pelo método de Rietveld. Os resultados apresentaram uma coexistência da fase pirocloro Pb1.86Mg0.24Nb1.76O6.5 e da fase perovskita Pb(Mg1/3Nb2/3)O3 (PMN) nos filmes preparados via rota da Columbita e a supressão da fase prirocloro nos filmes preparados pelo método MPO. Um estudo da morfologia por MEV indicou a preparação de filmes com boa homogeinidade e espessura média de 150nm Os resultados obtidos neste projeto indicam que a estabilização da fase perovkita do PMN e a supressão da fase pirocloro está relacionada a uma combinação particular de parâmetros tais como tempo e temperatura de cristalização e a adição de excessos de MgO e PbO a estequiometria.
Abstract: The present work describes the studies for the synthesis of ultrathin ferroelectric films of Pb(Mg1/3Nb2/3)O3 (PMN) and the systematic study of the crystallization kinetics of this material aimed at obtaining singlephase films. The films were produced from the modification of a chemical method based on oxide precursors. The obtention of the PMN films made by a technique of double stage, that allows greater control in the suppression of pyrochlore phases, and by technique via Oxide Precursors Method(OPM), through a direct reaction of the oxides. PMN films were prepared on Si(100) substrates with different numbers of depositions. These films were subjected to thermal treatments between 400ºC and 800°C, in conventional oven, under different preparation conditions. The structure of the films was investigated by the technique of X-ray diffraction and the structures refinements by the Rietveld method. The results showed a coexistence of pyrochlore phase Pb1.86Mg0.24Nb1.76O6.5 and perovskite phase Pb(Mg1/3Nb2/3)O3(PMN) in the films prepared via Columbita route and suppression of pyrochlore phase in films prepared by the OPM method. A study of morphology by SEM indicated the preparation of films with good homogeneity and medium thickness of 150 nm. The results obtained in this project suggest that the stabilization of PMN phase perovkite and the suppression of the pyrochlore phase is related to a particular combination of parameters such as time and temperature of crystallization and the addition of excess of MgO and PbO in the stoichiometry.
Mestre

With the overriding goal of developing functional multiferroic systems with technological potential, this thesis focuses on the role of orbital and charge ordering in coupling magnetism and ferroelectricity in synthetic quadruple perovskites. Using x-ray diffraction as the primary characterisation tool, modulations to crystal ordering have been interpreted in terms of orbital occupation and charge variation. Expanding on previous magnetic structure studies and polarisation measurements, structural analysis of CaMn₇O₁₂ has led to the experimental realisation of a new mechanism for multiferroicity, resulting from a "magneto-orbital helix". Motivated by the idea of tuning multiferroic properties through varying manganese valence, the doped system CaCu_xMn_7-xO₁₂ has been studied. Structural models considering the possibility of domain formation and multiple coexisting modulations have been tested against x-ray diffraction data. Finally, motivated by theoretical predictions of ferroelectric phases and multiferroicity in doped, simple, manganite perovskites, a structural model for the low temperature phase of NaMn₇O₁₂ has been developed, based upon theoretical predictions for orbital ordering and the experimentally determined magnetic structure. This model has been tested against previously measured neutron diffraction data. The importance of understanding crystal formation and domain structures when applying theoretical models has been highlighted, and has prompted the consideration of future work involving viewing and manipulating twin formation.

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
O presente trabalho descreve os estudos realizados para a síntese de filmes ferroelétricos ultrafinos de Pb(Mg1/3Nb2/3)O3 (PMN) e o estudo sistemático da cinética de cristalização deste material visando a obtenção de filmes monofásicos. Os filmes foram produzidos a partir da modificação de um método químico baseado em precursores óxidos. A obtenção dos filmes de PMN se deu através de uma técnica de duplo estágio, que possibilita maior controle na supressão de fases pirocloro, e da técnica via Método dos Precursores Óxidos (MPO), através da reação direta dos óxidos. Filmes de PMN foram preparados sobre substratos Si(100) com diferentes números de deposições. Esses filmes foram submetidos a tratamentos térmicos entre 400oC e 800ºC, em forno convencional, sob diferentes condições de preparo. A estrutura dos filmes foi investigada pela técnica de difração de raios-X e refinamentos da estrutura pelo método de Rietveld. Os resultados apresentaram uma coexistência da fase pirocloro Pb1.86Mg0.24Nb1.76O6.5 e da fase perovskita Pb(Mg1/3Nb2/3)O3 (PMN) nos filmes preparados via rota da Columbita e a supressão da fase prirocloro nos filmes preparados pelo método MPO. Um estudo da morfologia por MEV indicou a preparação de filmes com boa homogeinidade e espessura média de 150nm Os resultados obtidos neste projeto indicam que a estabilização da fase perovkita do PMN e a supressão da fase pirocloro está relacionada a uma combinação particular de parâmetros tais como tempo e temperatura de cristalização e a adição de excessos de MgO e PbO a estequiometria.
The present work describes the studies for the synthesis of ultrathin ferroelectric films of Pb(Mg1/3Nb2/3)O3 (PMN) and the systematic study of the crystallization kinetics of this material aimed at obtaining singlephase films. The films were produced from the modification of a chemical method based on oxide precursors. The obtention of the PMN films made by a technique of double stage, that allows greater control in the suppression of pyrochlore phases, and by technique via Oxide Precursors Method(OPM), through a direct reaction of the oxides. PMN films were prepared on Si(100) substrates with different numbers of depositions. These films were subjected to thermal treatments between 400ºC and 800°C, in conventional oven, under different preparation conditions. The structure of the films was investigated by the technique of X-ray diffraction and the structures refinements by the Rietveld method. The results showed a coexistence of pyrochlore phase Pb1.86Mg0.24Nb1.76O6.5 and perovskite phase Pb(Mg1/3Nb2/3)O3(PMN) in the films prepared via Columbita route and suppression of pyrochlore phase in films prepared by the OPM method. A study of morphology by SEM indicated the preparation of films with good homogeneity and medium thickness of 150 nm. The results obtained in this project suggest that the stabilization of PMN phase perovkite and the suppression of the pyrochlore phase is related to a particular combination of parameters such as time and temperature of crystallization and the addition of excess of MgO and PbO in the stoichiometry.

Cette Thèse traite de la ferroélectricité magnétiquement induite dans deux pérovskites quadruples de manganèse: (LaMn3)Mn4O12 et (YMn3)Mn4O12. Tous deux possèdent une monovalence et une structure antiferromagnétique commensurable des sites B. Ces caractéristiques simples, font de ces composés métastables et stabilisés sous haute pression, des systèmes modèles pour identifier la contribution des interactions d’échange symétrique et antisymétrique à la polarisation. YMO est une nouvelle phase dans laquelle le faible rayon de l’ion Y3+ augmente la pression chimique et donc l’interaction d’échange. L’orientation magnétique des sites B à lieu 30 degrés plus haut que dans LMO, à TN,B=108 K. En revanche, nous mesurons une polarisation, P = 0.54 μC cm-2, identique dans les deux composés. Il s’agit d’une valeur record dans les ferroélectriques magnétiques. De façon inattendue, la nature de la ferroélectricité magnétique est très différente dans chaque composé. Dans LMO, la ferroélectricité apparaît à la transition magnétique des sites B, à TN,B = 78 K, mais nous ne reportons pas de brisure du centre d’inversion par diffraction de rayons X ou par spectroscopie Raman et IR. Nous tentons d’expliquer ce résultat inattendu dans le cadre de la théorie phénoménologique des ferroélectriques impropres. D’un autre côté, dans YMO, nous observons l’apparition de la ferroélectricité à T* = 70 K bien que T* ne corresponde pas à une transition magnétique. En effet, à T* nous reportons seulement une anomalie magnétique suggérant un ordre magnétique latent. La transition structurale, qui a lieu à Ts, pourrait être responsable de l’alignement des domaines ferroélectriques
In the present Thesis, we study the large ferroelectricity induced by magnetism in two quadruple perovskite compounds: (LaMn3)Mn4O12 and (YMn3)Mn4O12, which both display single-valent properties and a commensurate C-type antiferromagnetic structure of the B-sites. These simple features offer a playground to elucidate the contribution of the symmetric and antisymmetric exchange interactions to the polarization. Both compounds are metastable and stabilized under high-pressure. YMO is a new phase, where the small Y3+ ion exerts a large chemical pressure, which is expected to enhance the exchange interaction and, thus, the spontaneous polarization. We find an ordering temperature of the B-sites, 30 K higher than in LMO. On the other hand, we surprisingly find identical values of the spontaneous polarization, P = 0.54 μC cm-2, in both compounds. It is a record value for magnetic ferroelectrics. In spite of the similarities, the nature of magnetic ferroelectricity appears to be very different in the two compounds. In LMO, ferroelectricity is induced by the magnetic ordering of B-sites, although no indication of inversion symmetry breaking is detected. We argue that this puzzling observation is consistent with prediction of domain structure in improper ferroelectrics. On the other hand, in YMO, the occurrence of ferroelectricity at T*=70 K is consistent with a polar structural modulation below Ts=200 K, however T* does not correspond to any long-range magnetic transition. Indeed, T* marks a magnetic anomaly suggesting a latent magnetic phase. We put forward the hypothesis that the above polar distortion of the crystal structure may force the alignment of polar domains

Dans cette thèse, nous présentons des études théoriques de matériaux pérovskites sous con-trainte mécanique uniaxiale en combinant les calculs de premier principe DFT ainsi quela théorie phénoménologique de type Landau. Les pérovskites ABO3 forment une classetrès importante de matériaux fonctionnels, qui peuvent présenter un large éventail de pro-priétés (e.g., supraconductivité, magnétisme, ferroélectricité, multiferroïcité, transitionsmétal-isolant. . . ) grâce aux petites distorsions d’ une même structure prototype cubique.Bien que ces composés aient été largement étudiés expérimentalement et théoriquement, ilreste encore des questions importantes et non résolues concernant les effets de contraintesuniaxiales. Au cours de ces dernières années, l’ ingénierie de contrainte a été décrite commeune approche originale pour ajuster les propriétés ferroélectriques pérovskites ABO3. Alorsque les effets de tension épitaxié-biaxiale et pression la hydrostatique, sont plutôt bien com-pris dans cette classe de matériaux, très peu est connu en ce qui concerne l’ effet des con-traintes mécaniques uniaxiales. Notre étude est motivée par ce manque de compréhensionactuelle de l’ effet de tension et compression uniaxiale, qui a été jusqu’à présent presquetotalement négligé. Deux composés prototypes sont étudiés dans le détail: PbTiO3 etSrTiO3. Après une introduction générale sur les composés ABO3 et les calculs techniques(ab initio et modèle phénoménologique de Landau), nous avons étudié l’ effet de contraintesmécaniques sur ces matériaux dans notre thèse.PbTiO3 est un composé ferroélectrique prototypique et également l’ un des composantsmère de la solution solide Pb(Zr,Ti)O3 (PZT), qui est le piézoélectrique le plus largementutilisé dans des applications. Pour PbTiO3, nous avons montré que indépendammentde la contrainte mécanique uniaxiale appliquée, le système conserve un état fondamentalpurement ferroélectrique avec la polarisation alignée, soit le long de la direction de lacontrainte (en phase FEz) ou bien le long d’ un des axes pseudo-cubique, qui lui estperpendiculaire (phase de FEx). Cela contraste avec les cas de contraintes mécaniquesisotropes ou bi-axial, pour qui de nouvelles phases combinant des modes ferroélectriqueset antiferrodistortives ont déjà été décrites. Sous contrainte uniaxiale, PbTiO3 passe d’unétat fondamental FEx sous compression à un état fondamental FEz en tension au-delà d’une tension critique !czz! +1%. Sous contrainte uniaxiale, PbTiO3 présente soit un étatfondamental FEx sous compression ("zz < 0) ou un état fondamental de FEz sous tension("zz > 0). Cependant, ici, un brusque saut des paramètres structuraux est prévu sousdes contraintes de compression et de traction à des valeurs critiques "zz! +2 GPa et −8GPa. Ce comportement semble similaire à celui pré-prédit sous pression isotrope négativeet pourrait se révéler utile en pratique pour améliorer la réponse piézoélectrique dans lesnano-composants.Le deuxième composé intéressant est SrTiO3. Il a été largement étudié au cours desdernières décennies, en raison de ses propriétés exceptionnelles à basse température. Dansce travail, nous avons élargi nos précédentes études de PbTiO3, en explorant théorique-ment les effets de pression sur la perovskite SrTiO3, combinant les premiers principes decalculs et un modèle phénoménologique de type Landau. Nous avons discuté de l’évolutiondes fréquences des phonons de SrTiO3 des trois cas de contraintes isotrope, uniaxial ettensions biaxiaux en utilisant les calculs de premier principe. Nous confirmons des travauxexpérimentaux précédents sur SrTiO3 que ça soit en contrainte épitaxiée ou sous pressionhydrostatique. Enfin, nous avons calculé de diagramme de phase de SrTiO3 sous contrainteuniaxiale, obtenue à partir de la théorie de Landau que nous avons comparé aux calculsde premier principe
In the present thesis we present theoretical studies of perovskite compounds under uniax-ial mechanical constraints combining first-principles DFT calculations approach and phe-nomenological Landau theory. ABO3 perovskites form a very important class of functionalmaterials that can exhibit a broad range of properties (e.g., superconductivity, magnetism,ferroelectricity, multiferroism, metal-insulator transitions. . . ) within small distortions ofthe same simple prototype cubic structure. Though these compounds have been exten-sively studied both experimentally and computationally, there are still unresolved issuesregarding the effect of pressure. In recent years, strain engineering has reported to bean original approach to tune the ferroelectric properties of perovskite ABO3 compounds.While the effect of epitaxial biaxial strain and hydrostatic strain is rather well understoodin this class of materials, very little is yet known regarding the effect of uniaxial mechanicalconstraints. Our study is motivated by the little existing understanding of the effect ofuniaxial strain and stress, that has been up to now almost totally neglected. Two proto-type compounds are studied in detail: PbTiO3 and SrTiO3. After a general introductionon ABO3 compounds and calculations techniques (ab initio and phenomenological Landaumodel), we studied the effect of mechanical constraints in these compounds in our thesis.PbTiO3 is a prototypical ferroelectric compound and also one of the parent components ofthe Pb(Zr,Ti)O3 solid solution (PZT), which is the most widely used piezoelectrics. ForPbTiO3, we have shown that irrespectively of the uniaxial mechanical constraint applied,the system keeps a purely ferroelectric ground-state, with the polarization aligned eitheralong the constraint direction (FEz phase) or along one of the pseudocubic axis perpen-dicular to it (FEx phase). This contrasts with the case of isotropic or biaxial mechanicalconstraints for which novel phases combining ferroelectric and antiferrodistortive motionshave been previously reported. Under uniaxial strain, PbTiO3 switches from a FEx groundstate under compressive strain to FEz ground-state under tensile strain, beyond a critical strain !czz! +1%. Under uniaxial stress, PbTiO3 exhibits either a FEx ground state undercompression ("zz < 0) or a FEz ground state under tension ("zz > 0). Here, however, anabrupt jump of the structural parameters is also predicted under both compressive andtensile stresses at critical values "zz! +2 GPa and −8 GPa. This behavior appears similarto that predicted under negative isotropic pressure and might reveal practically useful toenhance the piezoelectric response in nanodevices.The second compound of interest is SrTiO3. It has been widely studied in the past decadesdue to its unusual properties at low temperature. In this work, we have extended ourprevious investigations on PbTiO3 by exploring theoretically the pressure effects on per-ovskite SrTiO3 combining the first-principles calculations and a phenomenological Landaumodel. We have discussed the evolution of phonon frequencies of SrTiO3 with the threeisotropic, uniaxial and biaxial strains using first-principles calculations. We also reproducethe previous work done in SrTiO3 with epitaxial strain and hydrostatic strain. Finally,we have calculated the phase diagram of SrTiO3 under uniaxial strain, as obtained fromLandau theory and discussed how it compares with the first-principles calculations