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Journal articles on the topic 'Ferroelectric-loop'

Author: Grafiati

Published: 6 September 2023

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1

Nishimura, Kiyoshi, Takaaki Fuchikami, and Kazuhiro Hoshiba. "A ferroelectric hysteresis loop model." Electronics and Communications in Japan (Part II: Electronics) 80, no. 10 (October 1997): 1–8. http://dx.doi.org/10.1002/(sici)1520-6432(199710)80:10<1::aid-ecjb1>3.0.co;2-c.

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2

Kim, Bora, Daehee Seol, Shinbuhm Lee, Ho Nyung Lee, and Yunseok Kim. "Ferroelectric-like hysteresis loop originated from non-ferroelectric effects." Applied Physics Letters 109, no. 10 (September 5, 2016): 102901. http://dx.doi.org/10.1063/1.4962387.

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3

Unruan, Muangjai, R. Wongmaneerung, Yongyut Laosiritaworn, Supon Ananta, and Rattikorn Yimnirun. "Changes in Ferroelectric Properties of 0.7PMN–0.3PT Ceramic with Compressive Stress." Advanced Materials Research 55-57 (August 2008): 277–80. http://dx.doi.org/10.4028/www.scientific.net/amr.55-57.277.

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In this work, effects of compressive stress on the ferroelectric properties of 0.7PMN–0.3PT ceramics were investigated. The ceramics with the formula (0.7)Pb(Mg1/3Nb2/3)O3-(0.3)PbTiO were prepared by a conventional mixed-oxide method. The ferroelectric properties under compressive stress were observed at stress up to 80 MPa using a compressometer in conjunction with a modified Sawyer-Tower circuit. The results showed that applied stress had a significant influence on the ferroelectric properties of 0.7PMN–0.3PT ceramics. Ferroelectric characteristics, i.e. the area of the ferroelectric hysteresis (P-E) loop, the saturation polarization (Psat), the remanent polarization (Pr) and loop squareness (Rsq), decreased with increasing compressive stress, while the coercive field (Ec) remained relatively constant. Stress-induced domain wall motion suppression and non-180oC ferroelectric domain switching processes are responsible for the changes observed.

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4

Kumar, Neeraj, and Rabinder Nath. "Ferroelectric and Electrical Properties of Potassium Nitrate Thin Composite Layers." Advanced Materials Research 403-408 (November 2011): 607–17. http://dx.doi.org/10.4028/www.scientific.net/amr.403-408.607.

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The ferroelectric and electrical properties of potassium nitrate (KNO3): polyvinylidene fluoride (PVDF) composite layers prepared by melt press method have been studied. The stability of ferroelectric phase (phase –III) of potassium nitrate (KNO3) in the composite layers at room temperature have been analyzed. The temperature dependence of ferroelectric hysteresis loop (P-E) characteristics have been investigated in the composite layers. The electrical conductivity (σ) and dielectric behaviour of composite layers have been characterized. The conductivity and dielectric variation with temperature during heating and cooling modes has been found to provide the knowledge of phase transition in the composite. The capacitance –-voltage (C-V) and conductance - voltage (G-V) characteristics clearly show the ferroelectric butterfly loop, which is attributed to the features of ferroelectricity in the composite layers at room temperature. The coexistence of ferroelectric phase (phase III) with paraelectric phase (phase II) has also been observed at room temperature in the composite layers during dielectric and conductivity measurements.

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5

Pintilie, L., and M. Alexe. "Ferroelectric-like hysteresis loop in nonferroelectric systems." Applied Physics Letters 87, no. 11 (September 12, 2005): 112903. http://dx.doi.org/10.1063/1.2045543.

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6

Itskovsky, M. A. "Pyroelectric hysteresis loop at ferroelectric phase transition." Journal of Applied Physics 85, no. 8 (April 15, 1999): 4256–58. http://dx.doi.org/10.1063/1.370339.

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7

Cui, Lian, Haiying Cui, and Yuchun Li. "Dynamic hysteresis loop in a ferroelectric heterostructure." Chinese Journal of Physics 56, no. 1 (February 2018): 185–92. http://dx.doi.org/10.1016/j.cjph.2017.12.009.

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8

Nishimura, Kiyoshi. "Ferroelectric hysteresis loop model of imprint properties." Electronics and Communications in Japan (Part II: Electronics) 82, no. 10 (October 1999): 27–34. http://dx.doi.org/10.1002/(sici)1520-6432(199910)82:10<27::aid-ecjb4>3.0.co;2-j.

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9

Kour, P., and S. K. Sinha. "Studies of Sr2+ ion substitution on ferroelectric and piezoelectric properties of PZT nanocrystalline." Cerâmica 59, no. 349 (March 2013): 34–38. http://dx.doi.org/10.1590/s0366-69132013000100004.

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Strontium substituted lead zirconate titanate nanocrystalline material with chemical formula Pb0.95Sr0.05 (Zr0.52Ti0.48) O3 have been synthesized by alkoxide based sol gel method. The product was characterized by differential thermal analysis, thermogravimetric analysis, powder X-ray diffraction and scanning electron microscopy. The ferroelectric hysteresis loop measurement was carried out at room temperature using ferroelectric loop tracer over a field range of 20 kV/cm. The remanent polarization Pr, saturation polarization Pmax and coercive field Ec were 12.97 µC/cm², 30.52 µC/cm² and 6.5 kV/cm respectively. The piezoelectric coefficient d33 was measured with the variation of polling field.

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10

KASHYAP, RAMAN, TANUJ DHAWAN, PRIKSHIT GAUTAM, O. P. THAKUR, N. C. MEHRA, and R. P. TANDON. "EFFECT OF PROCESSING CONDITIONS ON ELECTRICAL PROPERTIES OF CaCu3Ti4O12 CERAMICS." Modern Physics Letters B 24, no. 12 (May 20, 2010): 1267–73. http://dx.doi.org/10.1142/s021798491002327x.

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CaCu 3 Ti 4 O 12 ( CCTO ) ceramics were prepared by the solid-state reaction route. Effect of sintering time was studied on the polarization (P) versus electric field (E) behavior. Unlike conventional ferroelectric hysteresis loop, PE hysteresis behavior in CCTO ceramics was observed to exhibit ferroelectric-like loop where polarization does not saturate but gives a maximum value. Remnant polarization and maximum polarization was observed to increase with sintering time. Current (I)–voltage (V) characteristics shows a nonlinear behavior making them useful for varistor applications. Coefficient of non-linearity (α) is also found to depend on sintering duration.

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11

Kai, Shoichi, Tetsuya Hashimoto, Ko Ose, and Mashahide Imasaki. "Triple Hysteresis Loop of a Ferroelectric Liquid Crystal." Molecular Crystals and Liquid Crystals 130, no. 1-2 (August 1985): 143–62. http://dx.doi.org/10.1080/00268948508079507.

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12

Kundys, Bohdan, Antoine Maignan, Christine Martin, Ninh Nguyen, and Charles Simon. "Magnetic field induced ferroelectric loop in Bi0.75Sr0.25FeO3−δ." Applied Physics Letters 92, no. 11 (March 17, 2008): 112905. http://dx.doi.org/10.1063/1.2890714.

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13

Changshi, Liu. "Calculation ferroelectric hysteresis loop via an explicit function." Ferroelectrics Letters Section 44, no. 1-3 (May 4, 2017): 49–57. http://dx.doi.org/10.1080/07315171.2017.1320493.

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14

Das, S. K., and B. K. Roul. "Double hysteresis loop in BaTi1−xHfxO3 ferroelectric ceramics." Journal of Materials Science: Materials in Electronics 26, no. 8 (May 8, 2015): 5833–38. http://dx.doi.org/10.1007/s10854-015-3143-8.

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15

Van Lich, Le, Takahiro Shimada, Shahmohammadi Sepideh, Jie Wang, and Takayuki Kitamura. "Multilevel hysteresis loop engineered with ferroelectric nano-metamaterials." Acta Materialia 125 (February 2017): 202–9. http://dx.doi.org/10.1016/j.actamat.2016.11.065.

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16

Sun, Xiaofan, Cuiping Xu, Zheng Tang, Shulin Jiao, Zhangran Gao, Yanzhou Lu, Dong Li, Hong-Ling Cai, and X. S. Wu. "A novel way to eliminate the conductivity effect of polycrystalline ferroelectric material." Journal of Applied Physics 132, no. 19 (November 21, 2022): 194103. http://dx.doi.org/10.1063/5.0120805.

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The double-wave method is widely used in ferroelectric measurements to eliminate the effects of conductance and capacitance components while preserving the ferroelectric domain contribution. However, in polycrystalline ferroelectric material, the assumption of the evolution of domains by the double-wave method no longer applies due to the domain back switch of de-field, and the domain contribution calculated by the current subtraction method is also problematic. Therefore, we proposed a new method to calculate the charge contribution of conductance and eliminate the conductance interference in the hysteresis loop. Finally, the feasibility of this new method is verified in many typical polycrystalline ferroelectric materials. This work provides a path for the study of ferroelectric properties of some high conductivity materials.

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17

Meereboer, Niels L., Ivan Terzić, and Katja Loos. "Tuning the dielectric behavior of poly(vinylidene fluoride-co-vinyl alcohol) using a facile urethane-based crosslinking method." Polymer Chemistry 10, no. 11 (2019): 1335–43. http://dx.doi.org/10.1039/c8py01802b.

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18

Prasertpalichat, Sasiporn, Muangjai Unruan, J. Tungsritrakul, and Rattikorn Yimnirun. "Ferroelectric and Dielectric Aging Effects of Fe³⁺/Nb⁵⁺ Hybrid-Doped Barium Titanate Ceramics." Advanced Materials Research 55-57 (August 2008): 233–36. http://dx.doi.org/10.4028/www.scientific.net/amr.55-57.233.

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It is well known that acceptor and donor doping results in opposite ferroelectric aging effects; however, the aging effects in hybrid-doped (acceptor+donor) has remained unclear. Thus, the aging effect of dielectric and ferroelectric properties in Fe3+/Nb5+ hybrid-doped BaTiO3 ceramics was investigated in this research. The concentration of acceptor dopant (Fe3+) was fixed at 1 mol% while that of donor dopant (Nb5+) was varied from 0.5-2.0 mol%. XRD technique was used to study the phase morphology. Before measuring dielectric and ferroelectric aging effect, all samples were deaged at 250 °C for 1 hour. The results showed that the dielectric properties of all deaged samples have decreased exponentially with time. The deaged samples with 0.5 and 1.0 mol% of Nb5+ obviously showed double hysteresis loop while that with higher concentration of Nb5+ (1.5-2.0 mol%) showed the rectangular (normal) hysteresis loop. The explanations based on the effect of defect dipole were discussed.

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19

Фрейдман, А. Л., И. Н. Хороший, and М. И. Колков. "Сегнетоэлектрический гистерезис и магнитоэлектрический эффект в орторомбических монокристаллах Dy-=SUB=-1-x-=/SUB=-Ho-=SUB=-x-=/SUB=-MnO-=SUB=-3-=/SUB=-." Физика твердого тела 64, no. 12 (2022): 1967. http://dx.doi.org/10.21883/ftt.2022.12.53650.454.

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In Dy1-xHoxMnO3 single crystals with the orthorhombic space group Pbnm, ferroelectric hysteresis loops were measured for compositions with x=0 and 0.3. As the content of Ho3+ ions increases, the hysteresis loop narrows and for x=0.3 it no longer manifests itself. An analysis of the signal corresponding to the hysteretic behavior of a ferroelectric showed that even harmonics can be obtained only if the hysteresis loop is not symmetric about the abscissa axis. In view of the latter, the hypothesis that the second harmonic of the magnetoelectric effect is a consequence of the complex dependence of the polarization on time due to its hysteresis becomes doubtful. Measurements of the dependence of the inverse magnetoelectric effect on the amplitude of the applied electric field ΔM(E) showed that the first harmonic remains linear with respect to the electric field even in the electric field strength region where the domain structure of the ferroelectric is rearranged.

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20

Freydman A. L., Horoshiy I. N., and Kolkov M. I. "Ferroelectric hysteresis and magnetoelectric effect in orthorhombic Dy-=SUB=-1-x-=/SUB=-Ho-=SUB=-x-=/SUB=-MnO-=SUB=-3-=/SUB=- single crystals." Physics of the Solid State 64, no. 12 (2022): 1935. http://dx.doi.org/10.21883/pss.2022.12.54389.454.

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In Dy1-xHoxMnO3 single crystals with the orthorhombic space group Pbnm, ferroelectric hysteresis loops were measured for compositions with x=0 and 0.3. As the content of Ho3+ ions increases, the hysteresis loop narrows and for x=0.3 it no longer manifests itself. An analysis of the signal corresponding to the hysteretic behavior of a ferroelectric showed that even harmonics can be obtained only if the hysteresis loop is not symmetric about the abscissa axis. In view of the latter, the hypothesis that the second harmonic of the magnetoelectric effect is a consequence of the complex dependence of the polarization on time due to its hysteresis becomes doubtful. Measurements of the dependence of the inverse magnetoelectric effect on the amplitude of the applied electric field Delta M(E) showed that the first harmonic remains linear with respect to the electric field even in the electric field strength region where the domain structure of the ferroelectric is rearranged. Keywords: multiferroics, ferroelectricity, hysteresis.

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21

Naushin, Nushrat, Sadi Md Shahriar, Oishy Roy, and Ahmed Sharif. "Modification in Structural, Morphological, Magnetic and Ferroelectric Properties of Calcium-Doped Bismuth Ferrite Nanoparticles." Journal of Engineering Science 11, no. 1 (October 5, 2020): 123–31. http://dx.doi.org/10.3329/jes.v11i1.49555.

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The structural, morphological, magnetic and ferroelectric properties of calcium (Ca) doped bismuth ferrite (BFO) synthesized using a sol-gel method were studied. X-ray diffraction (XRD) analysis followed by Rietveld refinement revealed the lattice distortion of BFO after doping with 6% and 8% Ca. This also led to the reduction in particle size by creating oxygen vacancies, which was observed from the surface morphology using Field Emission Scanning Electron Microscopy (FESEM). The Magnetic properties exhibited some enhancements in saturation magnetization when the particle size was near a limiting value. The reduction in the coercive magnetic field with the increase in dopant concentration was also evident from the M-H hysteresis loop measured by Vibrating Sample Magnetometer (VSM). The Ferroelectric P-E hysteresis loop exhibited an increased symmetry in the hysteresis loop and increase in the polarization with the increase in %Ca. The 8% Ca doped BFO exhibited an incomplete saturation in the hysteresis loop and was evident to exhibit leakage current characteristics. Journal of Engineering Science 11(1), 2020, 123-131

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22

Xia, Bin, Xi Yun He, Da Zhi Sun, Wen Xiu Cheng, Ping Sun Qiu, and Xia Zeng. "Evidence of Normal to Anti Ferroelectric Phase Transition of PLZT Transparent Ceramics of Different Zr/Ti Ratio." Key Engineering Materials 697 (July 2016): 223–26. http://dx.doi.org/10.4028/www.scientific.net/kem.697.223.

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The lanthanum-modified lead zirconate titanate transparent ceramics with different Zr/Ti ratio were prepared by the hot pressing sintering method. A single perovskive structure with a dense microsctructure was obtained and the transgranular fracture of PLZT ceramics tended to be more serious As the Zr/Ti ratio increases, the transmittance of PLZT ceramics tended to be higher and the transgranular fracture became more serious. The P-E loops changed froe a square hysteresis loop to a double tending slim hysteresis loop. Besides,the S-E loops changed from a approximate parabolic shape to a butterfly shape. These two loops confirm the transition from normal ferroelectric to anti ferroelectric phase occured with the Zr/Ti ratio increasing.

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23

Bochenek, D., P. Niemiec, R. Zachariasz, A. Chrobak, and G. Ziółkowski. "Ferroelectric–Ferromagnetic Composites Based on PZT Type Powder and Ferrite Powder." Archives of Metallurgy and Materials 58, no. 4 (December 1, 2013): 1013–17. http://dx.doi.org/10.2478/amm-2013-0119.

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Abstract A ferroelectric-ferromagnetic composites based on PZT powder have been obtained in presented work. The main aim of combination of ferroelectric and magnetic powders was to obtain material showing both electric and magnetic properties. Ferroelectric ceramic powder (in amount of 90%) was based on the doped PZT type solid solution while magnetic component of the composite was nickel-zinc ferrite Ni1-x ZnxFe2O4 (in amount of 10%). The synthesis of components of ferroelectric-ferromagnetic composite was performed using the solid phase sintering. Final densification of synthesized powder has been done using free sintering. For obtained of ferroelectric-ferromagnetic composites the XRD, the microstructure, EDS, dielectric, magnetic, internal friction and electrical hysteresis loop investigations were performed. Obtained results shown the correlations between the magnetic subsystem and the electrical subsystem of the ferroelectric-ferromagnetic composites. Such properties of obtained composites give the possibility to use them in memory applications of new type.

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24

Chunarrom, Wannida, and Hathaikarn Manuspiya. "The dielectric and polarization behavior of polyurethane-based polycarbonate diols with different content levels of fluorinated hard segments." Polymer Chemistry 12, no. 8 (2021): 1136–46. http://dx.doi.org/10.1039/d0py01682a.

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25

Su, Y., and G. J. Weng. "A polycrystal hysteresis model for ferroelectric ceramics." Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences 462, no. 2069 (February 14, 2006): 1573–92. http://dx.doi.org/10.1098/rspa.2005.1616.

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Most key elements of ferroelectric properties are defined through the hysteresis loops. For a ferroelectric ceramic, its loop is contributed collectively by its constituent grains, each having its own hysteresis loop when the ceramic polycrystal is under a cyclic electric field. In this paper, we propose a polycrystal hysteresis model so that the hysteresis loop of a ceramic can be calculated from the loops of its constituent grains. In this model a micromechanics-based thermodynamic approach is developed to determine the hysteresis behaviour of the constituent grains, and a self-consistent scheme is introduced to translate these behaviours to the polycrystal level. This theory differs from the classical phenomenological ones in that it is a micromechanics-based thermodynamic approach and it can provide the evolution of new domain concentration among the constituent grains. It also differs from some recent micromechanics studies in its secant form of self-consistent formulation and in its application of irreversible thermodynamics to derive the kinetic equation of domain growth. To put this two-level micromechanics theory in perspective, it is applied to a ceramic PLZT 8/65/35, to calculate its hysteresis loop between the electric displacement and the electric field ( D versus E ), and the butterfly-shaped longitudinal strain versus the electric field relation ( ϵ versus E ). The calculated results are found to be in good quantitative agreement with the test data. The corresponding evolution of new domain concentration c 1 and the individual hysteresis loops of several selected grains—along with those of the overall polycrystal—are also illustrated.

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26

ZHENG, R. Y., J. WANG, and S. RAMAKRISHNA. "RF SPUTTERED BISMUTH FERRITE THIN FILMS: EFFECT OF ANNEALING DURATION." Functional Materials Letters 01, no. 03 (December 2008): 221–24. http://dx.doi.org/10.1142/s1793604708000447.

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Polycrystalline BFO thin films of similar thickness but subjected to different annealing durations (2 hr and 4 hr) were deposited on SRO / Pt / TiO 2/ SiO 2/ Si substrates via RF sputtering. Phase identification by using X-ray diffractions confirms the pure BFO phase of the thin films fabricated. Polarization–Electric Field (P–E) loop study measured at different frequencies shows that a longer annealing duration led to the formation of space charges in the BFO thin films and thus caused a poor ferroelectric property observed in the hysteresis loop. The results of leakage current measurement for the two BFO films are consistent with the ferroelectric measurement, where a higher leakage current is demonstrated by the BFO film annealed for 4 hr.

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27

Ryding, Stephanie, Robert Cernik, Jenny Wooldridge, Tim L. Burnett, Mark Stewart, Carlo Vecchini, Markys G. Cain, et al. "Simultaneous measurement of X-ray powder diffraction and ferroelectric polarisation data as a function of applied electric field at a range of frequencies." Powder Diffraction 28, S2 (September 2013): S220—S227. http://dx.doi.org/10.1017/s0885715613001024.

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A variable frequency ferroelectric polarisation measurement system has been designed and built at the UK's Diamond Light Source. The electric field induced phase transitions in Pb(Zr1−xTix)O3 (PZT) have been used to test the facility via in-situ measurements of electric polarisation and XRD. Stroboscopic and real time data collection methods on polycrystalline samples were employed as a function of frequency to determine the dynamic ferroelectric response. The system has been shown to deliver XRD patterns of good statistical quality measured over 40 points of a ferroelectric PE loop. The system is now available on station I11 as a user facility at the Diamond Light Source.

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28

Wang Long-Hai, Yu Jun, Wang Yun-Bo, Peng Gang, Liu Feng, and Gao Jun-Xiong. "A model of ferroelectric capacitors based on hysteresis loop." Acta Physica Sinica 54, no. 2 (2005): 949. http://dx.doi.org/10.7498/aps.54.949.

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29

Zheng, Lirong, Chenglu Lin, W. ‐Ping Xu, and Masanori Okuyama. "Vertical drift ofP–Ehysteresis loop in asymmetric ferroelectric capacitors." Journal of Applied Physics 79, no. 11 (June 1996): 8634–37. http://dx.doi.org/10.1063/1.362485.

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30

Parravicini, Jacopo, Lucia Fornasari, Eugenio DelRe, Franco Marabelli, Aharon J. Agranat, and Gianbattista Parravicini. "Evidence of double-loop hysteresis in disordered ferroelectric crystal." Journal of Applied Physics 127, no. 18 (May 14, 2020): 184107. http://dx.doi.org/10.1063/1.5143524.

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31

Sucharitakul, Sukrit, Rattikorn Yimnirun, and Yongyut Laosiritaworn. "Acceptor-Doped Ferroelectric Modeling via Monte Carlo Simulation." Key Engineering Materials 421-422 (December 2009): 231–34. http://dx.doi.org/10.4028/www.scientific.net/kem.421-422.231.

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A 2D Monte Carlo simulation was done as an approach to get further insight of acceptor-doped ferroelectric material. By utilizing vector model allowing 14 directions of orientation for ferroelectric systems, Metropolis algorithm was applied on DIFFOUR Hamiltonian to obtain hysteresis profiles. Subjected to different concentration of acceptor dopants, power law scaling of hysteresis properties were obtained as functions of external parameters such as temperature, external field amplitude and frequency. The hysteresis loop shape and properties agreed well with those obtained experimentally.

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32

Guo, Y. Y., Y. Zhao, H. G. Zhang, and N. Zhang. "Aging-induced hysteresis loop evolution of Ba(Ti0.99Mn0.01)O3 ceramics during ferroelectric-ferroelectric transition cycle." Journal of Alloys and Compounds 696 (March 2017): 814–19. http://dx.doi.org/10.1016/j.jallcom.2016.12.055.

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33

Yang, Qianqian, Jingcong Hu, Yue-Wen Fang, Yueyang Jia, Rui Yang, Shiqing Deng, Yue Lu, et al. "Ferroelectricity in layered bismuth oxide down to 1 nanometer." Science 379, no. 6638 (March 24, 2023): 1218–24. http://dx.doi.org/10.1126/science.abm5134.

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Atomic-scale ferroelectrics are of great interest for high-density electronics, particularly field-effect transistors, low-power logic, and nonvolatile memories. We devised a film with a layered structure of bismuth oxide that can stabilize the ferroelectric state down to 1 nanometer through samarium bondage. This film can be grown on a variety of substrates with a cost-effective chemical solution deposition. We observed a standard ferroelectric hysteresis loop down to a thickness of ~1 nanometer. The thin films with thicknesses that range from 1 to 4.56 nanometers possess a relatively large remanent polarization from 17 to 50 microcoulombs per square centimeter. We verified the structure with first-principles calculations, which also pointed to the material being a lone pair–driven ferroelectric material. The structure design of the ultrathin ferroelectric films has great potential for the manufacturing of atomic-scale electronic devices.

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34

Puli, Venkata Sreenivas, Dhiren K. Pradhan, Brian C. Riggs, Shiva Adireddy, Ram S. Katiyar, and Douglas B. Chrisey. "Synthesis and characterization of lead-free ternary component BST–BCT–BZT ceramic capacitors." Journal of Advanced Dielectrics 04, no. 02 (April 2014): 1450014. http://dx.doi.org/10.1142/s2010135x14500143.

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Polycrystalline sample of lead-free 1/3( Ba 0.70 Sr 0.30 TiO 3) + 1/3( Ba 0.70 Ca 0.30 TiO 3) + 1/3( BaZr 0.20 Ti 0.80 O 3)( BST - BCT - BZT ) ceramic was synthesized by solid state reaction method. Phase purity and crystal structure of as-synthesized materials was confirmed by X-ray diffraction (XRD). Temperature-dependent dielectric permittivity studies demonstrated frequency-independent behavior, indicating that the studied sample has typical diffuse phase transition behavior with partial thermal hysteresis. A ferroelectric phase transition between cubic and tetragonal phase was noticed near room temperature (~ 330 K). Bulk P–E hysteresis loop showed a saturation polarization of 20.4 μC/cm2 and a coercive field of ~ 12.78 kV/cm at a maximum electric field of ~ 115 kV/cm. High dielectric constant (ε ~ 5773), low dielectric loss (tan δ ~ 0.03) were recorded at room temperature. Discharge energy density of 0.44 J/cm3 and charge energy density of 1.40 J/cm3 were calculated from nonlinear ferroelectric hysteresis loop at maximum electric field. Dielectric constant at variable temperatures and electric fields, ferroelectric to paraelectric phase transition and energy storage properties were thoroughly discussed.

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35

Bochenek, Dariusz, Przemysław Niemiec, and Artur Chrobak. "Ferroelectric-Ferromagnetic Solid Solutions of PZT-Ferrite Type." Key Engineering Materials 644 (May 2015): 175–78. http://dx.doi.org/10.4028/www.scientific.net/kem.644.175.

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In presented work the ferroelectric-ferromagnetic solid solutions based on multicomponent PZT type ferroelectric powders and ferromagnetic powder (chromium-manganese-zinc ferrite) were designed and obtained. In solid solutions the ferroelectric powders have 90 percent share, while ferrite powders have 10 percent share. The syntheses of mixed components of solid solutions were performed using the solid phase method and final densification was performed by free sintering (compacting method).The XRD, the microstructure, dielectric and magnetic (and electrical hysteresis loop) investigations were performed. Obtained results shown that solid solution PZT-ferrite type shown at low temperatures coexistence the magnetic and the electrical subsystem. Such properties of these materials give the possibility to use them to construct magnetoelectric transducers.

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36

Wang, Chun Mei, Hai Yang Dai, Tao Li, Ren Zhong Xue, Lei Su, and Zhen Ping Chen. "Ferroelectric Properties and Raman Scattering Spectra of Bi_1-xGd_xFeO₃ Ceramics." Advanced Materials Research 239-242 (May 2011): 1501–4. http://dx.doi.org/10.4028/www.scientific.net/amr.239-242.1501.

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Multiferroic ceramic samples of Bi1-xGdxFeO3 (x = 0, 0.05, 0.1 and 0.15) have been prepared by the rapid liquid phase sintering technique. The effect of Gd substitution on ferroelectric properties of Bi1-xGdxFeO3 ceramics has been investigated. The results of x-ray diffraction (XRD) patterns show that the single-phase BiFeO3 sample has a rhombohedral structure and Gd3+ substitution for Bi3+ has not affected the perovskite structure. Experimental results suggest that Gd3+ substitution for Bi3+ has markedly affected the Raman scattering spectra, and the ferroelectric properties of BiFeO3 are improved by Gd3+ doping. When x = 0.15, saturated ferroelectric hysteresis loop is observed at room temperature with the maximal 2Pr = 1.62 μC/cm2.

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37

Puli, Venkata Sreenivas, Shiva Adireddy, Dhiren K. Pradhan, Ram S. Katiyar, and Douglas B. Chrisey. "Nanoscale Ferroelectric Switchable Polarization and Leakage Current Behavior in (Ba0.50Sr0.50)(Ti0.80Sn0.20)O3Thin Films Prepared Using Chemical Solution Deposition." Journal of Nanomaterials 2015 (2015): 1–7. http://dx.doi.org/10.1155/2015/340616.

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Nanoscale switchable ferroelectric (Ba0.50Sr0.50)(Ti0.80Sn0.20)O3-BSTS polycrystalline thin films with a perovskite structure were prepared on Pt/TiOx/SiO2/Si substrate by chemical solution deposition. X-ray diffraction (XRD) spectra indicate that a cubic perovskite crystalline structure and Raman spectra revealed that a tetragonal perovskite crystalline structure is present in the thin films. Sr2+and Sn4+cosubstituted film exhibited the lowest leakage current density. Piezoresponse Force Microscopy (PFM) technique has been employed to acquire out-of-plane (OPP) piezoresponse images and local piezoelectric hysteresis loop in polycrystalline BSTS films. PFM phase and amplitude images reveal nanoscale ferroelectric switching behavior at room temperature. Square patterns with dark and bright contrasts were written by local poling and reversible nature of the piezoresponse behavior was established. Local piezoelectric butterfly amplitude and phase hysteresis loops display ferroelectric nature at nanoscale level. The significance of this paper is to present ferroelectric/piezoelectric nature in present BSTS films at nanoscale level and corroborating ferroelectric behavior by utilizing Raman spectroscopy. Thus, further optimizing physical and electrical properties, BSTS films might be useful for practical applications which include nonvolatile ferroelectric memories, data-storage media, piezoelectric actuators, and electric energy storage capacitors.

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38

Makino, Narimichi, Bong Yeon Lee, Makoto Moriya, Wataru Sakamoto, Takashi Iijima, and Toshinobu Yogo. "Synthesis and Properties of Mn-Doped (Bi_0.5Na_0.5)TiO₃ Thin Films by Chemical Solution Deposition." Key Engineering Materials 582 (September 2013): 59–62. http://dx.doi.org/10.4028/www.scientific.net/kem.582.59.

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Lead-free ferroelectric (Bi0.5Na0.5)TiO3(BNT) thin films were prepared by chemical solution deposition. BNT and Mn-doped BNT precursor thin films crystallized in the perovskite single phase at 700 °C on Pt/TiOx/SiO2/Si substrates. The leakage current density of the perovskite BNT films, especially in the high applied field region, was reduced by doping with a small amount of Mn. Also, Mn doping markedly improved the ferroelectric properties of the films. 0.5 and 1.0 mol% Mn-doped BNT thin films exhibited well-shaped ferroelectric polarization (P) electric field (E) hysteresis loops at room temperature. Furthermore, the 1 mol% Mn-doped BNT films showed a typical field-induced strain loop, and the effectived33values were estimated to be about 60 pm/V.

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39

Gao, Kaige, Chunlin Liu, Wei Zhang, Kangni Wang, and Wenlong Liu. "Pyroelectricity and field-induced spin-flop in (4-(Aminomethyl)pyridinium) 2 MnCl 4 · 2H 2 O." Royal Society Open Science 7, no. 5 (May 2020): 200271. http://dx.doi.org/10.1098/rsos.200271.

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Large single crystals of (4-(Aminomethyl)pyridinium) 2 MnCl 4 · 2H 2 O ( 1 ) were grown by slow evaporation of solution. The crystal structure was solved to be Pī, which belongs to the central symmetric space group. But small pyroelectric current was detected, as well as a ferroelectric hysteresis loop. The pyroelectric and the ferroelectric properties were attributed to the strain caused by defects. Temperature-dependent magnetic curves and the M – H curve show that 1 is antiferromagnetic ordering below 2.5 K. A field-induced spin-flop is observed in the antiferromagnetic ordering state.

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40

Wang, Zhe, Lingyan Wang, Wei Ren, Chao Li, Yi Quan, Kun Zheng, and Jian Zhuang. "The Vertically Heteroepitaxial Structure for Lead-Free Piezoelectric K0.5Na0.5NbO3 Films." Crystals 13, no. 3 (March 19, 2023): 525. http://dx.doi.org/10.3390/cryst13030525.

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The effect of epitaxial strain on the electrical properties of ferroelectric films has been widely investigated. However, this kind of strain is generally attributed to the substrate clamping constraints and is easily relaxed when the thickness of films is over 100 nm. In this work, a vertically epitaxial strain was introduced into lead-free piezoelectric K0.5Na0.5NbO3 films to improve the electrical properties of ferroelectric films. Two-phase, vertically epitaxial composite KNN-ZnO thin films were grown on the (001) STO substrate using a pulsed laser deposition (PLD) method. The highly (001) preferentially oriented KNN phase and (112¯ 0)-oriented ZnO phase were orderly arranged. Two types of morphologies of “square-like” and “stripe-looking” grains were observed in the surface image. An asymmetric “square” out-of-plane phase hysteresis loop and a “butterfly” displacement loop were exhibited in the KNN phase, whereas the ZnO phase showed a closed phase hysteresis loop and a slim displacement-voltage loop. Two different kinds of polarization behaviors for domains were also observed under applied electric fields, in which the domain of the KNN phase is easily switched to the opposite state, whereas the ZnO phase keeps a stable domain state when applying a DC bias of ±50 V. the vertically epitaxial growth of the KNN-ZnO composited films in this work provides a new way to fabricate complex nanoscale materials.

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41

Liu, Jing, and Xi Yao. "A new digital measuring system of ferroelectric hysteresis loop and field induced strain of ferroelectric materials." Ceramics International 30, no. 7 (January 2004): 2033–36. http://dx.doi.org/10.1016/j.ceramint.2003.12.165.

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42

Botea, Mihaela, Cristina Chirila, Georgia Andra Boni, Iuliana Pasuk, Lucian Trupina, Ioana Pintilie, Luminiţa Mirela Hrib, Becherescu Nicu, and Lucian Pintilie. "Lead-Free BiFeO3 Thin Film: Ferroelectric and Pyroelectric Properties." Electronic Materials 3, no. 2 (April 1, 2022): 173–84. http://dx.doi.org/10.3390/electronicmat3020015.

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The ferroelectric and pyroelectric properties of bismuth ferrite (BFO) epitaxial thin film have been investigated. The ferroelectric epitaxial thin layer has been deposited on strontium titanate (STO) (001) substrate by pulsed laser deposition, in a capacitor geometry using as top and bottom electrode a conductive oxide of strontium ruthenate (SRO). The structural characterizations performed by X-ray diffraction and atomic force microscopy demonstrate the epitaxial character of the ferroelectric thin film. The macroscopic ferroelectric characterization of BFO revealed a rectangular shape of a polarization-voltage loop with a remnant polarization of 30 μC/c m2 and a coercive electric field of 633 KV/cm at room temperature. Due to low leakage current, the BFO capacitor structure could be totally pooled despite large coercive fields. A strong variation of polarization is obtained in 80–400 K range which determines a large pyroelectric coefficient of about 10−4 C/m2 K deduced both by an indirect and also by a direct method.

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Zhu, Ruijian, Qianzi Yang, Dandan Zhu, Yaning Shen, Zengmei Wang, and Zhenxiang Cheng. "Electrode free hysteresis loop measurement of small dimensional ferroelectric materials." Materials Today Communications 31 (June 2022): 103842. http://dx.doi.org/10.1016/j.mtcomm.2022.103842.

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Li, Hsiao-Yun, Shiu-Cheng Chen, Hai-Ping Chen, Wei-Cheng Ran, and Jia-Shiang Fu. "A frequency-reconfigurable slot loop antenna using ferroelectric MIM capacitors." IEICE Electronics Express 10, no. 16 (2013): 20130521. http://dx.doi.org/10.1587/elex.10.20130521.

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45

Yu, Gang, Xuefeng Chen, Genshui Wang, and Xianlin Dong. "Scaling Behavior of Ferroelectric Hysteresis Loop in 63PbTiO3–37BiScO3Bulk Ceramic." Ferroelectrics 403, no. 1 (October 29, 2010): 219–24. http://dx.doi.org/10.1080/00150191003760803.

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46

You, Wei-Xiang, and Pin Su. "Depolarization Field in Ferroelectric Nonvolatile Memory Considering Minor Loop Operation." IEEE Electron Device Letters 40, no. 9 (September 2019): 1415–18. http://dx.doi.org/10.1109/led.2019.2929277.

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47

Kim, Do-Hyun, and Jong-Jean Kim. "Dynamic scaling of hysteresis loop areas in ferroelectric KDP crystal." Ferroelectrics 222, no. 1 (February 1999): 285–93. http://dx.doi.org/10.1080/00150199908014828.

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48

Ma, Zhi, Yanan Ma, Zhipeng Chen, Fu Zheng, Hua Gao, Hongfei Liu, and Huanming Chen. "Modeling of hysteresis loop and its applications in ferroelectric materials." Ceramics International 44, no. 4 (March 2018): 4338–43. http://dx.doi.org/10.1016/j.ceramint.2017.12.027.

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49

Hueting, Raymond. "The Balancing Act in Ferroelectric Transistors: How Hard Can It Be?" Micromachines 9, no. 11 (November 7, 2018): 582. http://dx.doi.org/10.3390/mi9110582.

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For some years now, the ever continuing dimensional scaling has no longer been considered to be sufficient for the realization of advanced CMOS devices. Alternative approaches, such as employing new materials and introducing new device architectures, appear to be the way to go forward. A currently hot approach is to employ ferroelectric materials for obtaining a positive feedback in the gate control of a switch. This work elaborates on two device architectures based on this approach: the negative-capacitance and the piezoelectric field-effect transistor, i.e., the NC-FET (negative-capacitance field-effect transistor), respectively π -FET. It briefly describes their operation principle and compares those based on earlier reports. For optimal performance, the adopted ferroelectric material in the NC-FET should have a relatively wide polarization-field loop (i.e., “hard” ferroelectric material). Its optimal remnant polarization depends on the NC-FET architecture, although there is some consensus in having a low value for that (e.g., HZO (Hafnium-Zirconate)). π -FET is the piezoelectric coefficient, hence its polarization-field loop should be as high as possible (e.g., PZT (lead-zirconate-titanate)). In summary, literature reports indicate that the NC-FET shows better performance in terms of subthreshold swing and on-current. However, since its operation principle is based on a relatively large change in polarization the maximum speed, unlike in a π -FET, forms a big issue. Therefore, for future low-power CMOS, a hybrid solution is proposed comprising both device architectures on a chip where hard ferroelectric materials with a high piezocoefficient are used.

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Гусев, Н. С., М. В. Сапожников, О. Г. Удалов, И. Ю. Пашенькин, and П. А. Юнин. "Магнитоэлектрический эффект в гибридных системах сегнетоэлектрик/ферромагнитная пленка с анизотропией типа "легкая плоскость" и "легкая ось"." Журнал технической физики 90, no. 11 (2020): 1917. http://dx.doi.org/10.21883/jtf.2020.11.49984.124-20.

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We studied the striction magnetoelectric effect in hybrid systems consisting of a magnetic film deposited on the ferroelectric surface. Films with planar (galfenol, nickel) and perpendicular (multilayer Co / Pt structures) magnetic anisotropy were used. PMN-PT crystal was used, as a ferroelectric. The hysteresis loops of magnetic films were investigated as a function of the voltage, applied to a ferroelectric crystal. In films with “easy plane” type anisotropy, a rotation of the axis directions in the plane of the sample was detected upon application of electric voltage. In structures with an "easy axis" type anisotropy, a change in the shape of the hysteresis loop is observed, which, according to the simulation, which can be associated with a change in the Dzyaloshinsky – Morii surface interaction at the Co and Pt interface

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