Academic literature on the topic 'Facteur g des excitons'
Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles
Consult the lists of relevant articles, books, theses, conference reports, and other scholarly sources on the topic 'Facteur g des excitons.'
Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.
You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.
Journal articles on the topic "Facteur g des excitons"
Ju, Long, Lei Wang, Ting Cao, Takashi Taniguchi, Kenji Watanabe, Steven G. Louie, Farhan Rana, et al. "Tunable excitons in bilayer graphene." Science 358, no. 6365 (November 16, 2017): 907–10. http://dx.doi.org/10.1126/science.aam9175.
Full textN. R. Senthil Kumar, N. R. Senthil Kumar, A. John Peter A. John Peter, and Chang Woo Lee Chang Woo Lee. "Optical properties of excitons in strained Gax In1-xAs/GaAs quantum dot: ef fect of geometrical conf inement on exciton g-factor." Chinese Optics Letters 11, no. 8 (2013): 082501–82507. http://dx.doi.org/10.3788/col201311.082501.
Full textFaria Junior, Paulo E., Klaus Zollner, Tomasz Woźniak, Marcin Kurpas, Martin Gmitra, and Jaroslav Fabian. "First-principles insights into the spin-valley physics of strained transition metal dichalcogenides monolayers." New Journal of Physics 24, no. 8 (August 1, 2022): 083004. http://dx.doi.org/10.1088/1367-2630/ac7e21.
Full textLalitha, D., A. John Peter, and Chang Woo Lee. "Magneto-trions in a GaMnAs/Ga0.6Al0.4As Quantum Dot." International Journal of Nanoscience 14, no. 05n06 (October 2015): 1550023. http://dx.doi.org/10.1142/s0219581x15500234.
Full textCorfdir, P., Y. Fontana, B. Van Hattem, E. Russo-Averchi, M. Heiss, A. Fontcuberta i Morral, and R. T. Phillips. "Tuning the g-factor of neutral and charged excitons confined to self-assembled (Al,Ga)As shell quantum dots." Applied Physics Letters 105, no. 22 (December 2014): 223111. http://dx.doi.org/10.1063/1.4903515.
Full textSong, Fei-Long, Yu-Nuan Wang, Feng Zhang, Shi-Yao Wu, Xin Xie, Jing-Nan Yang, Si-Bai Sun, et al. "The g-factor anisotropy of trapped excitons in CH3NH3PbBr3 perovskite." Acta Physica Sinica 69, no. 16 (2020): 167102. http://dx.doi.org/10.7498/aps.69.20200646.
Full textLacroix, Y., C. A. Tran, S. P. Watkins, and M. L. W. Thewalt. "Optical identification of the exciton–polariton in epitaxial InAs." Canadian Journal of Physics 74, S1 (December 1, 1996): 212–15. http://dx.doi.org/10.1139/p96-861.
Full textKono, Junichiro. "(Invited, Digital Presentation) Macroscopically Aligned Carbon Nanotubes for Photonics, Electronics, and Thermoelectrics." ECS Meeting Abstracts MA2022-01, no. 10 (July 7, 2022): 775. http://dx.doi.org/10.1149/ma2022-0110775mtgabs.
Full textSCHMIDT, T., L. WORSCHECH, M. SCHEIBNER, T. SLOBODSKYY, L. W. MOLENKAMP, and A. FORCHEL. "SPIN POLARIZATION IN SEMIMAGNETIC CdMnSe/ZnSe QUANTUM DOTS WITH ZERO EXCITON g FACTOR." International Journal of Modern Physics B 21, no. 08n09 (April 10, 2007): 1626–31. http://dx.doi.org/10.1142/s0217979207043324.
Full textDenis, Pascale L., Alina N. Stamate, and Michel Cossette. "L’effet de retest du facteur g en sélection du personnel." Humain et Organisation 7, no. 1 (June 22, 2022): 1–16. http://dx.doi.org/10.7202/1089953ar.
Full textDissertations / Theses on the topic "Facteur g des excitons"
Wang, Shuli. "Étude des propriétés électroniques des perovskites bidimensionnelles à halogénure métallique par spectroscopie magnéto-optique." Electronic Thesis or Diss., Toulouse, INSA, 2023. http://www.theses.fr/2023ISAT0004.
Full textAbstract: In recent years, two-dimensional (2D) perovskite materials have attracted considerable attention duo to their unique and excellent electronic and optical properties, which make them an extremely promising semiconductor for light-emitting and display applications. Furthermore, the nonmagnetic perovskite can be semi magnetic semiconductor by incorporating magnetic impurities into lattices of the host perovskite to introduce magnetic properties. The coexistence of both excellent optoelectronic and magnetic properties, makes semi magnetic 2D perovskite to be a considerably promising material for opto-spintronic semiconductor devices for information processing and communications.In this thesis, we explore the electronic and optical properties of 2D perovskites via magneto-optical spectroscopy. We start from performing magneto-photoluminescence (PL) and magneto-transmission measurements on CsPbBr3-based nanoplatelets with a different thickness of the lead-halide slab, ranging from 2 to 4 layers of lead-halide octahedral plane. By applying in-plane magnetic fields up to 65 T, the optically inactive dark excitonic state is brightened. This approach allows us to directly observe an improvement of the PL emission on the low-energy side of the PL spectrum, which indicates that the optically inactive dark excitonic state is the lowest-lying state in these nanoplatelets. Additionally, combining our magneto-PL and magneto-transmission results with theoretical predictions of the exciton fine structure splitting, we accurately determine the energy splitting between the dark and bright excitons. We demonstrate that indeed the dark-bright exciton splitting increases with decreasing layers of lead-halide octahedral plane. We also demonstrate that the efficient emission from these nanoplateltes is due to a phonon bottleneck effect, which significantly reduces the relaxation of the photo excited excitons to the optically inactive dark state.Finally, we investigate the electronic properties of Mn-doped 2D (PEA)2PbI4 perovskite via magneto-transmission spectroscopy for various Mn molar fractions. We find that the exciton Lande g-factor can be controlled by the incorporated Mn concentration. With increasing Mn concentration x from 0 to 2%, the g-factor increases, which we attribute to the sp-d exchange interaction between band-edge excitons and spins hosted in Mn ions. If the Mn concentration is increased further, up to 5%, the exciton g-factor decreases. This anomalous counter-trend is attributed to the Mn-Mn interactions, which result in an effective anti-ferromagnetic coupling
Godoy, Marcio Peron Franco de. "Propriedades de pontos quânticos de InP/GaAs." [s.n.], 2006. http://repositorio.unicamp.br/jspui/handle/REPOSIP/277715.
Full textTese (doutorado) - Universidade Estadual de Campinas, Instituto de Física Gleb Wataghin
Made available in DSpace on 2018-08-06T18:02:06Z (GMT). No. of bitstreams: 1 Godoy_MarcioPeronFrancode_D.pdf: 4057709 bytes, checksum: 0df1e56082150d4109dcf891f05d4da6 (MD5) Previous issue date: 2006
Resumo: Neste trabalho estudamos as propriedade estruturais e ópticas de pontos quânticos auto-organizados de InP crescidos sobre o substrato de GaAs. Esta estrutura apresenta o alinhamento de bandas tipo-II na interface, confinando o elétron no ponto quântico, enquanto o buraco mantém-se na barreira, próximo à interface devido à interação coulombiana atrativa. As amostras foram crescidas por epitaxia de feixe químico (CBE) no modo Stranskii-Krastanov. Os pontos quânticos apresentam raio médio de 25 nm e grande dispersão de altura (1-5 nm) e ocorre a relaxação parcial do parâmetro de rede, chegando a 2 %, em pontos quânticos superficiais. Do ponto de vista de propriedades ópticas, a fotoluminescência de pontos quânticos superficiais exibe uma eficiente emissão óptica, devido a baixa velocidade de recombinação dos estados superficiais do InP, e reflete a densidade e distribuição bimodal de tamanhos. Além disso, sua emissão óptica em função da intensidade de excitação exibe comportamento diverso em comparação com pontos quânticos cobertos com uma camada de GaAs. Em pontos quânticos cobertos, determinamos a energia de ativação térmica, que varia de 6 a 8 meV, e é associada à energia de ligação do éxciton ou energia de ionização do buraco. O decaimento temporal da luminescência de pontos quânticos é de 1,2 ns, um tempo relativamente curto para um ponto quântico tipo-II. A análise das propriedades magneto-ópticas em pontos quânticos individuais, inédita em QDs tipo-II, permitiu verificar que o fator-g do éxciton é praticamente constante, independentemente do tamanho dos QDs, devido ao fato dos buracos estarem levemente ligados. Por fim, mostramos a versatilidade do sistema acoplando-o a um poço quântico de InGaAs. Este acoplamento introduz mudanças na superposição das funções de onda do par elétron-buraco que permitem a manipulação do tempo de decaimento da luminescência e da energia de ligação excitônica
Abstract: We have investigated structural and optical properties of InP self-assembled quantum dots grown on GaAs substrate. This system presents a type-II band lineup where only electrons are confined in the InP quantum dots. The InP/GaAs quantum dots were grown by chemical beam epitaxy in the Stranskii-Krastanov mode. Our quantum dots present a mean radius of 25 nm and large height dispersion, 1-5 nm, and a partial relieve of the strain up to 2 % is observed. The photoluminescence spectra of surface quantum dots show an efficient optical emission, which is attributed to the low surface recombination velocity in InP. We observed a bimodal dispersion of the dots size distribution, giving rise to two distinct emission bands. A remarkable result is the relatively large blue shift of the emission band from uncapped samples as compared to those for capped dots. In capped quantum dots, we obtained the thermal activation energy, from 6 to 8 meV, which is associated to the exciton binding energy or hole ionization energy. The observed luminescence decay time is about 1.2 ns, relatively short decay time for type II system. We investigated magneto-optical properties using single-dot spectroscopy. The values of the exciton g factor obtained for a large number of single InP/GaAs dots are mainly constant independent of the emission energy and, therefore, of the quantum dot size. The result is attributed to the weak confinement of the holes in InP/GaAs QDs. We have also investigated structures where InP quantum dots are coupled to a InGaAs quantum well. This system permits the manipulation of the wave function overlap between electron-hole in order to control the optical emission decay time and exciton binding energy
Doutorado
Física
Doutor em Ciências
Raskin, Maxim. "Ultraschnelle Ladungsträger- und Spindynamik in II-VI und III-V Halbleitern mit weiter Bandlücke." Doctoral thesis, Universitätsbibliothek Chemnitz, 2013. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-125227.
Full textBouvet, Samuel. "Lipides et trafic : rôles de GBF1, facteur d’échange de la petite protéine G Arf1." Thesis, Paris 11, 2013. http://www.theses.fr/2013PA112172/document.
Full textThe eukaryotic cell physically separates its functions within several membrane-bound organelles, which communicate using vesicles. Vesicular trafficking is under the control of small GTPases that exist as an inactive GDP-bound form and an active GTP-bound form. The switch between GDP and GTP is catalyzed by a guanine nucleotide exchange factor (GEF). On cis-Golgi membranes, Arf1, activated by the large GEF GBF1, recruits the COPI coat. COPI coated vesicles ensure the retrograde transport from the Golgi to the ER. Recently, GBF1 has been implicated in other pathways, such as the life cycle of various viruses and lipid droplet metabolism.Lipid droplets (LD), the major lipid storage organelle, play a major role in lipid homeostasis within the cell. LDs are connected to membrane trafficking and are therefore under the control of GTPases. In previous studies, our team showed that GBF1 localizes around LDs and that it is required for protein loading onto the LD surface. Here, data support the idea that GBF1 localizes to the LD surface. Using cell biology tools and microscopy, we identified, within GBF1, a lipid binding domain. In this domain, a single amphipathic helix is necessary and sufficient for LD targeting in cells. The regulation of GBF1 localization relies on interaction with Rab1 (data support a Rab1-Arf1 cascade between the ER and the Golgi) and on intramolecular interactions between GBF1 domains
Paleotti, Olivia. "Rôle de la petite protéine G Arf6 et de son facteur d'échange Efa6 dans l'endocytose dépendante de la clathrine." Nice, 2006. http://www.theses.fr/2006NICE4027.
Full textArfs small G proteins are implicate in vesicular transport and actin reorganisation. They exist in two forms: an inactive form, bound to the GDP and an active form, bound to the GTP. Exchange factors activate Arfs and GAPs (GTPase Activating Protein) inactivate them. We worked on Arf6 and on its exchange factor Efa6 in cellular functions. During my PhD, I studied Arf6 in clathrin-dependant endocytosis. G protein-coupled receptors (GPCRs) are desensibilized by β-arrestins that link GPCRs to the endocytic machinery. We showed that Arf6 and Efa6 could both interact with β-arrestins. Moreover, Arf1 recruits the adaptator proteins (AP-1, 3 and 4) at the golgi membrane to form endocytic vesicles. We showed that Arf6 could recruit AP-2 complex at the plasma membrane in a GTP-dependent manner
BERAUD, DUFOUR SOPHIE. "Mecanisme d'activation de la protein g, arf1 : role coordonne des membranes lipidiques et du facteur d'echange, arno." Nice, 1999. http://www.theses.fr/1999NICE5305.
Full textJguirim, Naira. "Micro-fabrication additive des filtres à fort facteur de qualité pour des applications en bande W/G." Thesis, Limoges, 2021. http://www.theses.fr/2021LIMO0031.
Full textAs part of this work, millimeter band-pass filters were developed to meet the given specifications in W and G bands. We used additive micro-fabrication technology which allowed us to fabricate filters based on metallic cavities with an air-filled 3D architecture and a strong quality factor
Karlin, Lionel Azoulay Elie. "Détérioration respiratoire en sortie d'aplasie sous facteur de croissance hématopoïétique (G-CSF) à propos de 20 cas /." Créteil : Université Paris-Val-de-Marne, 2004. http://doxa.scd.univ-paris12.fr:80/theses//th0222006.pdf.
Full textYatime, Laure. "Rôle du facteur d'initiation e/aIF2 dans le démarrage de la traduction chez les Eucaryotes et chez les archées." Phd thesis, Ecole Polytechnique X, 2005. http://pastel.archives-ouvertes.fr/pastel-00001539.
Full textGonzalez, Hernandez Felix Guillermo. "Tempos de relaxação e decoerência em ensembles de pontos quânticos." [s.n.], 2007. http://repositorio.unicamp.br/jspui/handle/REPOSIP/277852.
Full textTese (doutorado) - Universidade Estadual de Campinas, Instituto de Fisica Gleb Wataghin
Made available in DSpace on 2018-08-09T10:48:50Z (GMT). No. of bitstreams: 1 GonzalezHernandez_FelixGuillermo_D.pdf: 12837677 bytes, checksum: 70e82c96ea88ab1de4fa785d908c9af6 (MD5) Previous issue date: 2007
Resumo: Medidas experimentais foram realizadas para determinar as escalas de tempo de relaxação e decoerência do spin eletrônico como bit quântico. A estrutura dos estados de exciton foi investigada com o objetivo de servir como estados intermediários na manipulação do spin. O sistema utilizado para o estudo de decoerência é um ensemble de pontos quânticos auto-formados semicondutores. Dois temas servem como eixos centrais dos três experimentos desenvolvidos nesta tese: a polarização de spin e o fator g de Landé. No primeiro experimento, ao incluir o efeito do reservatório térmico, foi obtido o grau de polarização do spin (populações dos níveis up e down) para as camadas s e p. O desdobramento dos níveis orbitais em subníveis de spin permitiu obter a magnitude do fator g para estes estados. Mudando a orientação do campo magnético, foram observadas as anisotropias do tensor g e a sua relação com os detalhes do potencial de confinamento. Estas características permitiram inferir o tempo de relaxação T1. A medida da polarização resolvida no tempo foi realizada através de es-pectroscopia óptica de bombeio-prova. Os pulsos de luz e o campo magnético transverso permitem que uma polarização líquida seja inicializada. A rotação de Kerr permitiu observar oscilações desta polarização em torno do campo magnético com freqüência determinada pelo fator g. A perda da coerência de fase do spin resulta no decaimento destas oscilações numa escala de tempo T2. Medidas realizadas num ensemble de spins implicam em que o tempo de decoerência encontra-se limitado pela escala de defasagem T¤2< T2. Uma técnica semelhante à refocalização por spin-eco em experimentos de ressonância magnética nuclear, foi aplicada utilizando pulsos de laser para reverter a defasagem do ensemble. Tanto a possibilidade de medir o sinal de eco como o tempo de decoerência foram medidos como função da temperatura. A estrutura de níveis de exciton e a sua distribuição no ensemble foi estudada também com espectroscopia de bombeio-prova. Foram observados batimentos quânticos entre os níveis de estrutura fina do exciton para sis-temas 0D e 2D limitados pelo tempo de recombinação
Abstract: Experimental measurements were carried out to determine the scales of the relaxation and decoherence time for the electronic spin as quantum bit. The structure of the exciton states was investigated with the objective to serve as intermediate states in the spin manipulation. The system studied for the implementation of the quantum computation is an ensemble of self-assembled semiconductor quantum dots. Two subjects serve as central axes of the three experiments developed in this thesis: the spin polarization and the Landé g-factor. In the first experiment, when including the effect of the thermal reservoir, the degree of spin polarization (populations for the up and down levels) was measured for layers s and p. The splitting of the orbital levels in spin sublevels allowed to get the magnitude of factor g for these states. Changing the orientation of the magnetic field, the g-tensor anisotropies and its relation with the details of the confinement potential had been observed. These characteristics had allowed to infer the relaxation time T1. The time resolved polarization measurement was carried out by optical pump-probe spectroscopy. The pulses of light and the transverse magnetic field allow the initialization of a net polarization. The Kerr rotation allowed to observe oscillations of this polarization around the magnetic field with frequency determined for factor g. The loss of the spin phase coherence results in the decay of these oscillations in a time scale T2. Measurements carried out in an ensemble of spins imply that the decoherence time is limited by the ensemble dephasing time T¤2 < T2. A technique similar to the spin-echo refocalization in nuclear magnetic resonance experiments using laser pulses was applied to reverse the ensemble dephasing. The possibility to measure the echo signal and the decoherence time was measured as a function of the temperature. The structure of exciton levels and its distribution in ensemble were also studied with pump-probe spectroscopy. Quantum beats were observed be-tween the fine structure exciton levels for 0D and 2D systems, yet limited by the recombination time
Doutorado
Física da Matéria Condensada
Doutor em Ciências
Books on the topic "Facteur g des excitons"
J, Sternberg Robert, and Grigorenko Elena, eds. The general factor of intelligence: How general is it? Mahwah, N.J: L. Erlbaum Associates, 2002.
Find full textGrigorenko, Elena, and Robert J. Sternberg. General Factor of Intelligence: How General Is It? Taylor & Francis Group, 2002.
Find full textBook chapters on the topic "Facteur g des excitons"
"Appendice P. Évaluation du facteur de Landé g." In Physique des solides, 957–58. EDP Sciences, 2002. http://dx.doi.org/10.1051/978-2-7598-0178-7.c054.
Full textConference papers on the topic "Facteur g des excitons"
Senthilkumar, N. R., and A. John Peter. "Effects of gallium alloy content and the geometrical confinement on effective exciton g-factor in a III-V semiconductor quantum dot." In SOLID STATE PHYSICS: PROCEEDINGS OF THE 57TH DAE SOLID STATE PHYSICS SYMPOSIUM 2012. AIP, 2013. http://dx.doi.org/10.1063/1.4791389.
Full textIshii, A., T. Uda, and Y. K. Kato. "Room-temperature single photon emission from micron-long air-suspended carbon nanotubes." In JSAP-OSA Joint Symposia. Washington, D.C.: Optica Publishing Group, 2017. http://dx.doi.org/10.1364/jsap.2017.7p_a404_3.
Full textWittmann, M., M. T. Wick, G. Korn, J. Ringling, and E. Matthias. "Subpicosecond Carrier Relaxation Dynamics and Defect Formation in Wide-Band-Gap Materials." In The European Conference on Lasers and Electro-Optics. Washington, D.C.: Optica Publishing Group, 1998. http://dx.doi.org/10.1364/cleo_europe.1998.cwf57.
Full textAydın, Kemal Bartu, Levent Aydin, and Fethullah Güneş. "Stochastic Optimization of TiO2-Graphene Nanocomposite by Using Neuro-Regression Approach for Maximum Photocatalytic Degradation Rate." In International Students Science Congress. Izmir International Guest Student Association, 2021. http://dx.doi.org/10.52460/issc.2021.044.
Full textHess, Harald F. "Near-field optical characterization of quantum wells and nanostructures." In Quantum Optoelectronics. Washington, D.C.: Optica Publishing Group, 1995. http://dx.doi.org/10.1364/qo.1995.qwa2.
Full text