Relevant bibliographies by topics / Extrinsic Semiconductors

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  2. Dissertations / Theses
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Academic literature on the topic 'Extrinsic Semiconductors'

Author: Grafiati
Published: 7 September 2023

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Journal articles on the topic "Extrinsic Semiconductors"

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Yang, Jin-Peng, Hai-Tao Chen, and Gong-Bin Tang. "Modeling of thickness-dependent energy level alignment at organic and inorganic semiconductor interfaces." Journal of Applied Physics 131, no. 24 (June 28, 2022): 245501. http://dx.doi.org/10.1063/5.0096697.

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We identify a universality in the Fermi level change of Van der Waals interacting semiconductor interfaces. We show that the disappearing of quasi-Fermi level pinning at a certain thickness of semiconductor films for both intrinsic (undoped) and extrinsic (doped) semiconductors over a wide range of bulk systems including inorganic, organic, and even organic–inorganic hybridized semiconductors. The Fermi level ( EF) position located in the energy bandgap was dominated by not only the substrate work function (Φsub) but also the thickness of semiconductor films, in which the final EF shall be located at the position reflecting the thermal equilibrium of semiconductors themselves. Such universalities originate from the charge transfer between the substrate and semiconductor films after solving one-dimensional Poisson's equation. Our calculation resolves some of the conflicting results from experimental results determined by using ultraviolet photoelectron spectroscopy (UPS) and unifies the general rule on extracting EF positions in energy bandgaps from (i) inorganic semiconductors to organic semiconductors and (ii) intrinsic (undoped) to extrinsic (doped) semiconductors. Our findings shall provide a simple analytical scaling for obtaining the “quantitative energy diagram” in the real devices, thus paving the way for a fundamental understanding of interface physics and designing functional devices.
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Zeitler, U., and A. G. M. Jansen. "Extrinsic magnetoresistance in semiconductors." Physica B: Condensed Matter 204, no. 1-4 (January 1995): 90–94. http://dx.doi.org/10.1016/0921-4526(94)00247-s.

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Gösele, Ulrich M., and Teh Y. Tan. "Point Defects and Diffusion in Semiconductors." MRS Bulletin 16, no. 11 (November 1991): 42–46. http://dx.doi.org/10.1557/s0883769400055512.

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Semiconductor devices generally contain n- and p-doped regions. Doping is accomplished by incorporating certain impurity atoms that are substitutionally dissolved on lattice sites of the semiconductor crystal. In defect terminology, dopant atoms constitute extrinsic point defects. In this sense, the whole semiconductor industry is based on controlled introduction of specific point defects. This article addresses intrinsic point defects, ones that come from the native crystal. These defects govern the diffusion processes of dopants in semiconductors. Diffusion is the most basic process associated with the introduction of dopants into semiconductors. Since silicon and gallium arsenide are the most widely used semiconductors for microelectronic and optoelectronic device applications, this article will concentrate on these two materials and comment only briefly on other semiconductors.A main technological driving force for dealing with intrinsic point defects stems from the necessity to simulate dopant diffusion processes accurately. Intrinsic point defects also play a role in critical integrated circuit fabrication processes such as ion-implantation or surface oxidation. In these processes, as well as during crystal growth, intrinsic point defects may agglomerate and negatively impact the performance of electronic or photovoltaic devices. If properly controlled, point defects and their agglomerates may also be used to accomplish positive goals such as enhancing device performance or processing yield.
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Liboff, Richard L. "Quasiclassical mobility for extrinsic semiconductors." Journal of Physics and Chemistry of Solids 46, no. 11 (January 1985): 1327–30. http://dx.doi.org/10.1016/0022-3697(85)90134-9.

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Mazzeo, M. P., and L. Restuccia. "Thermodynamics of n-type extrinsic semiconductors." Energy 36, no. 7 (July 2011): 4577–84. http://dx.doi.org/10.1016/j.energy.2011.02.055.

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Katzengruber, B., M. Krupa, and P. Szmolyan. "Bifurcation of traveling waves in extrinsic semiconductors." Physica D: Nonlinear Phenomena 144, no. 1-2 (September 2000): 1–19. http://dx.doi.org/10.1016/s0167-2789(00)00030-0.

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Ridgway, M. C., C. J. Glover, G. de M. Azevedo, S. M. Kluth, K. M. Yu, and G. J. Foran. "Structure in amorphous semiconductors: Extrinsic and intrinsic." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 238, no. 1-4 (August 2005): 294–301. http://dx.doi.org/10.1016/j.nimb.2005.06.066.

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Bordovskiĭ, G. A., R. A. Castro, and E. I. Terukov. "Extrinsic conduction in Ge28.5Pb15S56.5 and Ge27Pb17Se56 glassy semiconductors." Technical Physics Letters 32, no. 11 (November 2006): 913–15. http://dx.doi.org/10.1134/s1063785006110010.

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Kartheuser, E., J. Schmit, and R. Evrard. "Theory of extrinsic oscillatory photoconductivity in polar semiconductors." Journal of Applied Physics 63, no. 3 (February 1988): 784–88. http://dx.doi.org/10.1063/1.340070.

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Wu, Chhi-Chong, and Jensan Tsai. "Hall effect and magnetoresistance in extrinsic piezoelectric semiconductors." Journal of Low Temperature Physics 73, no. 1-2 (October 1988): 53–78. http://dx.doi.org/10.1007/bf00681743.

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Dissertations / Theses on the topic "Extrinsic Semiconductors"

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Spina, Carla. "Zinc oxide semiconducting nanocrystals : scaffolds for intrinsic and extrinsic defects." Thesis, McGill University, 2009. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=115869.

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As a material whose applications are many and growing, zinc oxide still remains a complex system whose photoluminescent (PL), structural, electrical, and photocatalytic properties have not been fundamentally understood. The luminescent properties of zinc oxide (ZnO) nanocrystals (NCs) are very sensitive to crystal structure, and defect states in zinc oxide, which in turn is very sensitive to preparation methods, post-synthesis workup, and thermal treatments. Understanding and managing this rich defect chemistry is critical to controlling ZnO properties. As the surface-to-volume ratio of ZnO increases as materials enter the quantum regime, the surface defects play a stronger role. The exact role of the defect states and their contribution to the physical and chemical properties of ZnO has been studies in great lengths yet still remains controversial.
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Wu, Wen. "Modeling the extrinsic resistance and capacitance of planar and non-planar MOSFETs /." View abstract or full-text, 2007. http://library.ust.hk/cgi/db/thesis.pl?ECED%202007%20WUW.

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Tang, Xinghai. "Intrinsic and extrinsic parameter fluctuation limits on gigascale integration (GSI)." Diss., Georgia Institute of Technology, 1999. http://hdl.handle.net/1853/13305.

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MICHELI, PAOLA R. de. "Analise termografica e espectrofotometrica do clareamento dental extrinseco utilizando laser de diodo e sistema de LED. Estudo in vitro." reponame:Repositório Institucional do IPEN, 2004. http://repositorio.ipen.br:8080/xmlui/handle/123456789/11197.

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Dissertacao (Mestrado Profissionalizante em Lasers em Odontologia)
IPEN/D-MPLO
Instituto de Pesquisas Energeticas e Nucleares, IPEN/CNEN-SP; Faculdade de Odontologia, Universidade de Sao Paulo
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Delacourt, Bruno. "Étude du dopage extrinsèque dans CdHgTe pour la réalisation de photodiodes infrarouges." Thesis, Université Grenoble Alpes (ComUE), 2017. http://www.theses.fr/2017GREAY110.

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La photodiode infrarouge, basée sur des semi-conducteurs à petit gap, permet de collecter des porteurs générés par l’impact de photons mais aussi par agitation thermique. Cette dernière crée un courant parasite dit d’obscurité qui détériore la performance du composant. Afin de minimiser le courant d’obscurité, le paramètre clef à maximiser est la durée de vie des porteurs minoritaires. Dans le contexte HOT, ceci ouvre la possibilité d’augmenter la température de fonctionnement des dispositifs de détection infrarouge quantique. Pour la fenêtre spectrale du MWIR, l’objectif à moyen terme est de fonctionner à 150−180 K au lieu de 80−120 K actuellement. Ceci permettrai un progrès significatif en termes de consommation, de puissance et donc d’autonomie et de fiabilité des systèmes. L'objectif de ces travaux de thèse est de déterminer expérimentalement les limites théoriques de la durée de vie des porteurs minoritaires dans le CdHgTe et dans un matériau III-V. Pour cela un banc de mesure de décroissance de photoluminescence ainsi qu’une méthode d’extraction des données permettant de discriminer les mécanismes de recombinaisons à partir de l’évolution du signal en fonction du niveau d’injection de porteurs dans l’échantillon ont été développés. En parallèle, un ensemble de caractérisations a été effectué pour assister le développement de technologies adressant le contexte HOT
Infrared photodiodes, which are based on narrow gap semiconductors, permit collection of carriers generated by photons impact but also by thermal agitation. This agitation create a parasitic dark current deteriorating device performance. In order to minimize this dark current, the key parameter to maximize is the minority carrier lifetime. In high operating temperature (HOT) context, it open the possibility to increase the operating temperature of photonic infrared detectors. For the mid-wave infrared window, the goal is to work at 150−180 K instead of 80−120 K currently. This would allow significant progress in terms of energy consumption, power and thus autonomy and reliability of the systems. The objective of this thesis is to experimentally determine the theoretical limits of the minority carrier lifetime in HgCdTe and in a III-V semiconductor. For this, a photoluminescence decay measurement bench as well as a data extraction method making possible to discriminate the recombination mechanisms from the evolution of the signal as a function of the level of carrier injection in the sample were developed. In parallel, a set of characterizations was carried out to assist the development of technologies addressing the HOT context
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Davidová, Lenka. "Diagnostika polovodičových materiálů metodou EBIC." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2017. http://www.nusl.cz/ntk/nusl-319289.

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Master´s thesis is focused on diagnostics of semiconductor materials by EBIC method (measuring of currents induced beam), determination of the lifetime of minority carriers, or their diffusion length. The theoretical part is aimed at the principle of scanning electron microscopy, the characteristic properties of the microscope and the signals generated by the interaction of the primary electron beam with the sample. The thesis describes a structure of semiconducting silicon, band models, types of lattice defects and doped of semiconductor structures. After that it is described the theory of calculation of the diffusion length of minority carriers in semiconductors of type N and P. The aim of the experiment part of the thesis is to measure the properties of the semiconductor structure by EBIC and determination of diffusion length and lifetime of minority charge carriers based on the measured data The aim of the experiment part of the thesis is to measure the properties of the semiconductor structure by EBIC and determination of diffusion length and lifetime of minority charge carriers on the basis of the measured data.
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Books on the topic "Extrinsic Semiconductors"

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Solymar, L., D. Walsh, and R. R. A. Syms. Semiconductors. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198829942.003.0008.

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Both intrinsic and extrinsic semiconductors are discussed in terms of their band structure. The acceptor and donor energy levels are introduced. Scattering is discussed, from which the conductivity of semiconductors is derived. Some mathematical relations between electron and hole densities are derived. The mobilities of III–V and II–VI compounds and their dependence on impurity concentrations are discussed. Band structures of real and idealized semiconductors are contrasted. Measurements of semiconductor properties are reviewed. Various possibilities for optical excitation of electrons are discussed. The technology of crystal growth and purification are reviewed, in particular, molecular beam epitaxy and metal-organic chemical vapour deposition.
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Bi, J. F., and K. L. Teo. Nanoscale Ge1−xMnxTe ferromagnetic semiconductors. Edited by A. V. Narlikar and Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533053.013.17.

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This article discusses the structure characterizations, magnetic and transport behaviors of the nanoscale ferromagnetic semiconductors Ge1-xMnxTe grown by molecular beam epitaxy with various manganese compositions x ranging from 0.14 to 0.98. After providing an overview of the growth procedure and characterization, the article analyzes the structures of the Ge1-xMnxTe system using X-ray diffraction and high-resolution transmission electron microscopy. It then considers the optical, magnetic and transport properties of the semiconductors and shows that the crystal quality is degraded and the proportion of amorphous phase increases with increasing Mn composition. Nanoclusters and nanoscale grains can be observed when x > 0.24, which greatly affect their magnetic and electronic properties. The magnetic anisotropy is weakened due to different orientations of the clusters embedded in the GeTe host. An anomalous Hall effect is also observed in the samples, which can be attributed to extrinsic skew scattering.
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Book chapters on the topic "Extrinsic Semiconductors"

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Balkan, Naci, and Ayşe Erol. "Intrinsic and Extrinsic Semiconductors." In Graduate Texts in Physics, 37–78. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-319-44936-4_2.

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Gurylev, Vitaly. "Extrinsic Defects in Nanostructured Semiconductors." In Nanostructured Photocatalyst via Defect Engineering, 319–48. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-81911-8_10.

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Bergmann, Michael J., Stephen W. Teitsworth, and Luis L. Bonilla. "Nucleation of Space-Charge Waves in an Extrinsic Semiconductor with Nonuniform Impurity Profile." In Hot Carriers in Semiconductors, 505–7. Boston, MA: Springer US, 1996. http://dx.doi.org/10.1007/978-1-4613-0401-2_115.

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Teitsworth, S. W., M. J. Bergmann, and L. L. Bonilla. "Space Charge Instabilities and Nonlinear Waves in Extrinsic Semiconductors." In Nonlinear Dynamics and Pattern Formation in Semiconductors and Devices, 46–69. Berlin, Heidelberg: Springer Berlin Heidelberg, 1995. http://dx.doi.org/10.1007/978-3-642-79506-0_3.

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Merle, J. C., F. Meseguer, and M. Cardona. "Light Scattering in CuCl — Intrinsic and Extrinsic Effects." In Proceedings of the 17th International Conference on the Physics of Semiconductors, 1193–96. New York, NY: Springer New York, 1985. http://dx.doi.org/10.1007/978-1-4615-7682-2_270.

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Roth, A. P., R. Masut, D. Morris, and C. Lacelle. "Extrinsic Photoluminescence in Unintentionally and Magnesium Doped GaInAs/GaAs Strained Quantum Wells." In Properties of Impurity States in Superlattice Semiconductors, 271–83. Boston, MA: Springer US, 1988. http://dx.doi.org/10.1007/978-1-4684-5553-3_21.

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Germanova, K., V. Donchev, Ch Hardalov, and M. Saraydarov. "Extrinsic Surface Photovoltage Spectroscopy — An Alternative Approach To Deep Level Characterisation In Semiconductors." In Photovoltaic and Photoactive Materials — Properties, Technology and Applications, 317–20. Dordrecht: Springer Netherlands, 2002. http://dx.doi.org/10.1007/978-94-010-0632-3_30.

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Weik, Martin H. "extrinsic semiconductor." In Computer Science and Communications Dictionary, 561. Boston, MA: Springer US, 2000. http://dx.doi.org/10.1007/1-4020-0613-6_6700.

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Ardouin, B., T. Zimmer, H. Mnif, P. Fouillat, D. Berger, and D. Céli. "Bipolar Transistor’s Intrinsic and Extrinsic Capacitance Determination." In Simulation of Semiconductor Processes and Devices 2001, 304–7. Vienna: Springer Vienna, 2001. http://dx.doi.org/10.1007/978-3-7091-6244-6_68.

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Cristiano, F., B. Colombeau, C. Bonafos, J. Aussoleil, G. Ben Assayag, and A. Claverie. "Atomistic simulations of extrinsic defects evolution and transient enhanced diffusion in silicon." In Simulation of Semiconductor Processes and Devices 2001, 30–33. Vienna: Springer Vienna, 2001. http://dx.doi.org/10.1007/978-3-7091-6244-6_6.

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Conference papers on the topic "Extrinsic Semiconductors"

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van der Pol, Tom, Matthew Dyson, Kunal Datta, Stefan Meskers, and René Janssen. "Photoluminescence of thin film semiconductors affected by extrinsic effects." In Physics, Simulation, and Photonic Engineering of Photovoltaic Devices XI, edited by Alexandre Freundlich, Karin Hinzer, and Stéphane Collin. SPIE, 2022. http://dx.doi.org/10.1117/12.2604832.

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van der Wel, P. J., J. R. de Beer, R. J. M. van Boxtel, Y. Y. Hsieh, and Y. C. Wang. "Reliability Assessment of Extrinsic Defects in Sinx Metal-Insulator-Metal Capacitors." In 2006 Reliability of Compound Semiconductors Digest. IEEE, 2006. http://dx.doi.org/10.1109/rocs.2006.323402.

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Mönch, Winfried. "Adsorbate-induced Surface States and Fermi-level Pinning at Semiconductor Surfaces." In Microphysics of Surfaces, Beams, and Adsorbates. Washington, D.C.: Optica Publishing Group, 1989. http://dx.doi.org/10.1364/msba.1989.tuc1.

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Adatoms on semiconductors are inducing surface states and surface dipoles. For the observation of adatom-induced surface states, cleaved surfaces of III-V compound semiconductors are especially suited since they contain no intrinsic surface states within the bulk band gap. At such surfaces, the bands are thus flat up to the surface and adsorbate-induced surface band-bending is thus easily attributed to extrinsic surface states. Such adatom-induced surface states are responsible for the pinning of the Fermi level at adsorbate-covered semiconductor surfaces. Adatom-induced surface dipoles, on the other hand, are changing the ionization energy of the surface. Variations of the work function, finally, are including both changes of the surface band-bending and of the ionization energy.
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Whitman, Charles S. "Estimating effective dielectric thickness for capacitors with extrinsic defects by a statistical method." In 2007 ROCS Workshop[Reliability of Compound Semiconductors Digest]. IEEE, 2007. http://dx.doi.org/10.1109/rocs.2007.4391067.

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Podoleanu, A. Gh. "Optical Faraday extrinsic current sensor using semimagnetic semiconductors and one down-lead optical fibre." In 13th International Conference on Optical Fiber Sensors. SPIE, 1999. http://dx.doi.org/10.1117/12.2302039.

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Satou, Akira, Gen Tamamushi, Kenta Sugawara, Junki Mitsushio, Victor Ryzhii, and Taiichi Otsuji. "Extraction of intrinsic and extrinsic parameters of graphene field-effect transistor from its asymmetric I–V characteristic." In 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)]. IEEE, 2016. http://dx.doi.org/10.1109/iciprm.2016.7528701.

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Buscemi, F., E. Piccinini, R. Brunetti, and M. Rudan. "Intrinsic and extrinsic stability of Ovonic-switching devices." In 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). IEEE, 2015. http://dx.doi.org/10.1109/sispad.2015.7292352.

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Zaletaev, Nicolas B., and Vasily F. Kocherov. "Extrinsic semiconductor low-background infrared field-effect transistor of a new type." In SPIE's 1995 International Symposium on Optical Science, Engineering, and Instrumentation, edited by Marija Strojnik and Bjorn F. Andresen. SPIE, 1995. http://dx.doi.org/10.1117/12.221389.

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Perera, A. G. U. "IR detection at wavelengths up to 200 microns in extrinsic semiconductor devices." In 16th International Conference on Infrared and Millimeter Waves. SPIE, 1991. http://dx.doi.org/10.1117/12.2297947.

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Djenadi, R., G. Micolau, J. Postel-Pellerin, R. Laffont, J. L. Ogier, F. Lalande, and J. Melkonian. "Fast extraction of extrinsic cells in a NVM array after retention under gate stress." In 2011 International Semiconductor Device Research Symposium (ISDRS). IEEE, 2011. http://dx.doi.org/10.1109/isdrs.2011.6135222.

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