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Journal articles on the topic 'External gettering'

Author: Grafiati

Published: 25 May 2024

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1

Hofstetter, Jasmin, Jean F. Lelièvre, Carlos del Cañizo, and Antonio Luque. "Study of Internal versus External Gettering of Iron during Slow Cooling Processes for Silicon Solar Cell Fabrication." Solid State Phenomena 156-158 (October 2009): 387–93. http://dx.doi.org/10.4028/www.scientific.net/ssp.156-158.387.

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The eect of slow cooling after dierent high temperature treatments on the in- terstitial iron concentration and on the electron lifetime of p-type mc-Si wafers has been in- vestigated. The respective impacts of internal relaxation gettering and external segregation gettering of metal impurities during an extended phosphorous diusion gettering are studied. It is shown that the enhanced reduction of interstitial Fe during extended P-gettering is due to an enhanced segregation gettering while faster impurities like Cu and Ni are possibly reduced due to an internal gettering eect.

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2

Macdonald, Daniel, An Yao Liu, and Sieu Pheng Phang. "External and Internal Gettering of Interstitial Iron in Silicon for Solar Cells." Solid State Phenomena 205-206 (October 2013): 26–33. http://dx.doi.org/10.4028/www.scientific.net/ssp.205-206.26.

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The removal of dissolved iron from the wafer bulk is important for the performance of p-type multicrystalline silicon solar cells. In this paper we review some recent progress in understanding both external and internal gettering of iron. Internal gettering at grain boundaries and dislocations occurs naturally during ingot cooling, and can also be driven further during cell processing, especially by moderate temperature anneals (usually below 700 °C). Internal gettering at intra-grain defects plays key a role during such precipitation annealing. External gettering to phosphorus diffused regions is crucial in reducing the dissolved iron concentration during cell processing, although its effectiveness depends strongly on the diffusion temperature and profile. Gettering of Fe by boron and aluminum diffusions is also found to be very effective under certain conditions.

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3

Martinuzzi, Santo, and Isabelle Périchaud. "External Gettering for Multicrystalline Silicon Wafers." Solid State Phenomena 47-48 (July 1995): 153–64. http://dx.doi.org/10.4028/www.scientific.net/ssp.47-48.153.

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4

Lysáček, David, Jan Šik, and Petr Bábor. "Polycrystalline Silicon Layers with Enhanced Thermal Stability." Solid State Phenomena 178-179 (August 2011): 385–91. http://dx.doi.org/10.4028/www.scientific.net/ssp.178-179.385.

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We report on a new method of external gettering in silicon substrate for semiconductor applications. The proposed method is based on the deposition of a multilayer system formed by introducing a number of thin buried silicon oxide layers into the thick polycrystalline silicon layer deposited on the wafer backside. Oxide films of a few nanometer thicknesses significantly retard both the grain growth and subsequent loss of the gettering capability of the polycrystalline silicon layer during high temperature annealing. The mechanisms of the grain growth and the influence of the embedded oxide layers on the gettering function in the multilayer system are discussed. We used scanning electron microscopy and transmission electron microscopy for the characterization of the multilayer system, and intentional contamination for demonstration of the gettering properties.

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5

Périchaud, Isabelle, F. Floret, M. Stemmer, and Santo Martinuzzi. "Phosphorus External Gettering Efficiency in Multicrystalline Silicon Wafers." Solid State Phenomena 32-33 (December 1993): 77–82. http://dx.doi.org/10.4028/www.scientific.net/ssp.32-33.77.

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6

Lysáček, David, Petr Kostelník, and Petr Pánek. "Polycrystalline Silicon Gettering Layers with Controlled Residual Stress." Solid State Phenomena 205-206 (October 2013): 284–89. http://dx.doi.org/10.4028/www.scientific.net/ssp.205-206.284.

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We report on a novel method of low pressure chemical vapor deposition of polycrystalline silicon layers used for external gettering in silicon substrate for semiconductor applications. The proposed method allowed us to produce layers of polycrystalline silicon with pre-determined residual stress. The method is based on the deposition of a multilayer system formed by two layers. The first layer is intentionally designed to have tensile stress while the second layer has compressive stress. Opposite sign of the residual stresses of the individual layers enables to pre-determine the residual stress of the gettering stack. We used scanning electron microscopy for structural characterization of the layers and intentional contamination for demonstration of the gettering properties. Residual stress of the layers was calculated from the wafer curvature.

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7

Martinuzzi, Santo, I. Perichad, and M. Stemmer. "External Gettering around Extended Defects in Multicrystalline Silicon Wafers." Solid State Phenomena 37-38 (March 1994): 361–66. http://dx.doi.org/10.4028/www.scientific.net/ssp.37-38.361.

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8

Gay, N., and S. Martinuzzi. "External self-gettering of nickel in float zone silicon wafers." Applied Physics Letters 70, no. 19 (May 12, 1997): 2568–70. http://dx.doi.org/10.1063/1.118921.

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9

Hwan Kim, Yong, Ryosuke O. Suzuki, Hiroshi Numakura, Hirobumi Wada, and Katsutoshi Ono. "Removal of oxygen and nitrogen from niobium by external gettering." Journal of Alloys and Compounds 248, no. 1-2 (February 1997): 251–58. http://dx.doi.org/10.1016/s0925-8388(96)02679-5.

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10

Park, Hyomin, Sung Ju Tark, Chan Seok Kim, Sungeun Park, Young Do Kim, Chang-Sik Son, Jeong Chul Lee, and Donghwan Kim. "Effect of the Phosphorus Gettering on Si Heterojunction Solar Cells." International Journal of Photoenergy 2012 (2012): 1–7. http://dx.doi.org/10.1155/2012/794876.

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To improve the efficiency of crystalline silicon solar cells, should be collected the excess carrier as much as possible. Therefore, minimizing the recombination both at the bulk and surface regions is important. Impurities make recombination sites and they are the major reason for recombination. Phosphorus (P) gettering was introduced to reduce metal impurities in the bulk region of Si wafers and then to improve the efficiency of Si heterojunction solar cells fabricated on the wafers. Resistivity of wafers was measured by a four-point probe method. Fill factor of solar cells was measured by a solar simulator. Saturation current and ideality factor were calculated from a dark current density-voltage graph. External quantum efficiency was analyzed to assess the effect of P gettering on the performance of solar cells. Minority bulk lifetime measured by microwave photoconductance decay increases from 368.3 to 660.8 μs. Open-circuit voltage and short-circuit current density increase from 577 to 598 mV and 27.8 to 29.8 mA/cm2, respectively. The efficiency of solar cells increases from 11.9 to 13.4%. P gettering will be feasible to improve the efficiency of Si heterojunction solar cells fabricated on P-doped Si wafers.

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11

Martinuzzi, Santo, and Isabelle Périchaud. "Influence of Oxygen on External Phosphorus Gettering in Disordered Silicon Wafers." Materials Science Forum 143-147 (October 1993): 1629–34. http://dx.doi.org/10.4028/www.scientific.net/msf.143-147.1629.

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12

Walton, J. T., N. Derhacobian, Y. K. Wong, and E. E. Haller. "Lithium‐ion mobility improvement in floating‐zone silicon by external gettering." Applied Physics Letters 63, no. 3 (July 19, 1993): 343–45. http://dx.doi.org/10.1063/1.110037.

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13

Périchaud, Isabelle, and Santo Martinuzzi. "Interaction of Impurities and Dislocations in Silicon before and after External Gettering." Solid State Phenomena 57-58 (July 1997): 103–8. http://dx.doi.org/10.4028/www.scientific.net/ssp.57-58.103.

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14

Ehret, E., V. Allais, J. P. Vallard, and A. Laugier. "Influence of extended defects and native impurities on external gettering in polycrystalline silicon." Materials Science and Engineering: B 34, no. 2-3 (November 1995): 210–15. http://dx.doi.org/10.1016/0921-5107(95)01275-3.

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15

Kostikov, Yu A., and A. M. Romanenkov. "Mathematical modeling of the gettering process for a cylindrical region." Journal of Physics: Conference Series 2308, no. 1 (July 1, 2022): 012001. http://dx.doi.org/10.1088/1742-6596/2308/1/012001.

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Abstract The paper considers a mathematical model of the technical process of external gettering of silicon rods. The purpose of this process is to remove unwanted impurities from silicon. The model of this process is an initial-boundary value problem for a linear partial differential equation of parabolic type. A feature of this problem is the presence of a nonlocal in time boundary condition, which reflects the law of conservation of mass (matter). For numerical modeling, an algorithm based on difference approximations of differential operators of the 1st and 2nd order is proposed. The classical sweep method is used to find a solution to a discrete problem.

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16

Lee, W. P., E. P. Teh, H. K. Yow, C. L. Choong, and T. Y. Tou. "Enhanced gettering of iron impurities in bulk silicon by using external direct current electric field." Journal of Electronic Materials 34, no. 7 (July 2005): L25—L29. http://dx.doi.org/10.1007/s11664-005-0101-x.

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17

Khedher, N., A. Ben Jaballah, M. Bouaïcha, H. Ezzaouia, and R. Bennnaceur. "Effect of external gettering with porous silicon on the electrical properties of Metal–Oxide–Silicon devices." Physics Procedia 2, no. 3 (November 2009): 983–88. http://dx.doi.org/10.1016/j.phpro.2009.11.053.

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18

Joonwichien, Supawan, Isao Takahashi, Kentaro Kutsukake, and Noritaka Usami. "Effect of grain boundary character of multicrystalline Si on external and internal (phosphorus) gettering of impurities." Progress in Photovoltaics: Research and Applications 24, no. 12 (June 28, 2016): 1615–25. http://dx.doi.org/10.1002/pip.2795.

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19

Gay, N., and Santo Martinuzzi. "Comparison of External Gettering Efficiency of Phosphorus Diffusion, Aluminium-Silicon Alloying and Helium Implantation in Silicon Wafers." Solid State Phenomena 57-58 (July 1997): 115–22. http://dx.doi.org/10.4028/www.scientific.net/ssp.57-58.115.

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20

Martinuzzi, S., I. Perichaud, and J. J. Simon. "External gettering by aluminum–silicon alloying observed from carrier recombination at dislocations in float zone silicon wafers." Applied Physics Letters 70, no. 20 (May 19, 1997): 2744–46. http://dx.doi.org/10.1063/1.119009.

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21

Amri, Chohdi, Rachid Ouertani, Abderrahmane Hamdi, and Hatem Ezzaouia. "Enhancement of electrical parameters in solar grade monocrystalline silicon by external gettering through sacrificial silicon nanowire layer." Materials Research Bulletin 98 (February 2018): 41–46. http://dx.doi.org/10.1016/j.materresbull.2017.10.003.

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22

Koveshnikov, Sergei V., David Beauchaine, Zbigniew J. Radzimski, Li Ling, and K. V. Ravi. "Application of Gate Oxide Integrity to the Evaluation of the Efficiency of Internal and External Gettering Sites in Si Wafers." Solid State Phenomena 82-84 (November 2001): 393–98. http://dx.doi.org/10.4028/www.scientific.net/ssp.82-84.393.

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23

Hieslmair, Henry, Scott McHugo, and Eicke Weber. "External Gettering Comparison and Structural Characterization of Single and Polycrystalline Silicon." MRS Proceedings 378 (1995). http://dx.doi.org/10.1557/proc-378-327.

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AbstractVarious silicon samples, both single and polycrystalline, were intentionally contaminated and externally gettered using phosphorus, aluminum and co- phosphorus/aluminum gettering. Gettering efficiencies were quantified via diffusion length improvements. Structural characterization was used to correlate defects with low gettering efficiencies. External gettering was found to be particularly effective at recovering diffusion length in large grain polycrystalline silicon and solar grade single crystal silicon despite Fe contamination and high defect densities. One of two explanations is possible, 1) the structural defects are initially undecorated and are completely gettered after Fe contamination, or 2) metal decoration on as-grown structural defects are structurally and/or chemically different from intentional Fe decoration.

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24

Gafiteanu, R., U. Gösele, and T. Y. Tan. "Phosphorus and Aluminum Gettering of Gold in Silicon: Simulation and Optimization Considerations." MRS Proceedings 378 (1995). http://dx.doi.org/10.1557/proc-378-297.

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AbstractUsing the diffusion-segregation equation, modeling and simulations of gettering Au (a substi-tutional-interstitial species in Si) away from the Si bulk have been performed. Three external gettering schemes have been considered: wafer frontside P indiffusion gettering, wafer backside Al deposition gettering, and a combination of the two processes. Under the same processing conditions, it has been shown that P indiffusion gettering is faster than Al gettering, but P gettering has a lower gettering capacity and is less stable than Al gettering for longer gettering times. The combined P and Al gettering process is as fast as P gettering in reaching an optimum gettered state, and possesses the capacity and stability of the Al gettering process.

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25

Perichaud, I., and S. Martinuzzi. "External Gettering and Hydrogenation Effects on Electrical Properties of Multicrystalline Silicon Wafers." MRS Proceedings 262 (1992). http://dx.doi.org/10.1557/proc-262-481.

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ABSTRACTTo reduce the density of recombination centers, external gettering by phosphorus diffusion from a POCI3 source and hydrogénation were applied to 200 μm thick samples.Gettering was carried out at 850°C or 900°C, for 120 or 240 mn. Hydrogénations result of the annealing of samples at 400°C for 30 mn in gas flow. Thanks to arrays of mesa diodes, it is found that minority carrier diffusion lengths (Ln) are neatly improved by the gettering. The improvements are higher at 900°C than at 850°C, they increase with gettering time and SIMS analyses indicate that they are due to the removing of Fe, Cu and Ni atoms.Hydrogénation enhances Ln values in samples gettered at 850°C and the higher Ln the longer the gettering time. After hydrogénation, the values of Ln in the samples gettered at 850°C are comparable to those measured in samples gettered at 900°C. It is assumed that hydrogen is able to neutralize the activity of impurities which have not been gettered, like oxygen, and also that of residual metallic impurities.

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26

Gay Henquinet, N., and S. Martinuzzi. "Limiting Factors of Backside External Gettering by Nanocavities and Aluminum-Silicon Alloying in Silicon Wafers." MRS Proceedings 510 (January 1998). http://dx.doi.org/10.1557/proc-510-221.

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AbstractFloat zone silicon single crystalline wafers are submitted to He ion implantations at various energy levels and fluences in the ranges 40 to 120 keV and 1016 to 1017 cm−2, respectively. Cavities are formed after annealing at 900°C for 1 h in argon. Al-Si gettering results from the deposition of a backside 1 µm thick Al wafer and annealing at 900'C for 4 h in argon. The wafers are voluntarily contaminated by 1014 to 1017 cm−3nickel atoms and diffusion length of minority carriers is determined by SPV technique and measured before and after gettering.It is found that gettering by cavities works fairly well provided the fluence is 1017 cm−2. The gettering efficiency decreases in heavily contaminated samples suggesting that the capture of impurities by the cavities is limited by the saturation of their internal surface. Al-Si alloying appears more efficient at higher contamination levels. This is most likely due to the high solubility of metal atoms in the liquid Al-Si alloy formed during the annealing.

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27

Bouhafs, Djoudi, Messaoud Boumaour, Abderrahmane Moussi, Saddik El Hak Abaïdia, Nabil Khelifati, and Baya Palahouane. "Improvement of charge carrier lifetime in heat exchange method multicrystalline silicon wafers by extended phosphorous gettering process." Journal of Renewable Energies 14, no. 4 (October 24, 2023). http://dx.doi.org/10.54966/jreen.v14i4.289.

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External phosphorous diffusion gettering were applied using homogenous and extended schemes on multicrystalline silicon (Mc-Si) wafers obtained from solar grade (SOG) silicon feedstock by the heat exchange method (HEM) growth technique. X-ray fluorescence (XRF) characterization shows the presence of transition metals like Chromium (Cr), manganese (Mn) and iron (Fe) in the analyzed as-cut Mc-Si substrates with a predominance of Mn and Fe elements. Before and after gettering process, we have observed that the Cr atoms concentration drop from 4.1015 at.cm-3 in the as-cut Mc-Si samples to 2.5 1015 at.cm-3 with homogeneous gettering and to 3.1014 at.cm-3 in the wafer undergoes extended gettering. The quasi-steady-state photo conductance (QSSPC) technique is used to characterize the minority charge carrier’s lifetime tn before and after gettering process. It was found that the response of Mc-Si wafers is better (form point of view of lifetime improvement) to the extended process but in some regions it is less effective and the homogenous process give the best amelioration due probably to the spatial distribution of crystalline defects and metallic precipitates densities. With tn initial values before gettering in the range of 2.5-8 usec we have measured lifetime values in the range of 15 to 37 usec with extended process and from 10 to 30 µsec with the homogenous one which ensure cell efficiencies in the range of 15 to 16%.

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28

Lu, Congli, Yuzhen Chen, Yuhang Bai, Fei Wang, Baoqiang Xu, Hang Liu, Bin Yang, and Yikun Luan. "Deoxidation Purification of La-Ce Alloy by External Gettering." SSRN Electronic Journal, 2022. http://dx.doi.org/10.2139/ssrn.4218680.

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29

Ayvazyan, Gagik, Levon Hakhoyan, Karen Ayvazyan, and Arthur Aghabekyan. "External Gettering of Metallic Impurities by Black Silicon Layer." physica status solidi (a), December 22, 2022. http://dx.doi.org/10.1002/pssa.202200793.

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30

Lu, Congli, Yuzhen Chen, Yuhang Bai, Baoqiang Xu, Hang Liu, Bin Yang, Yikun Luan, and Fei Wang. "Deoxidation purification of La–Ce alloy by solid state external gettering." Vacuum, April 2023, 112086. http://dx.doi.org/10.1016/j.vacuum.2023.112086.

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31

Gay, N., and S. Martinuzzi. "Diffusion and Self-Gettering of Nickel in Float Zone Silicon Wafers." MRS Proceedings 469 (1997). http://dx.doi.org/10.1557/proc-469-469.

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ABSTRACTExternal gettering techniques trap removed impurities in regions of a semiconductor which contain defects or in which the solubility is enhanced like in phosphorus diffused layers or in Al-Si alloy. If a fast diffuser like nickel is used in place of Al to obtain an alloy or a compound close to the surface, contamination and decontamination can occur resulting of the indiffusion and removal of nickel atoms. P type FZ samples were partly covered by nickel (nickel òn part 1 and not on part 2) and then annealed at 950°C for 1h.As expected, after nickel indiffusion the diffusion length of minority carriers decreases but the values are always higher in part 1 than in part 2. Scanning infrared microscopy detects precipitates in part 2 and not in part 1. The results are explained assuming that the nickel-silicon compound formed at the surface serves as a diffusion source as well as an external self-gettering region.

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32

Perichaud, I., and S. Martinuzzi. "Impurity Removing at Dislocations in Float Zone Silicon by Aluminium-Silicon Alloying." MRS Proceedings 469 (1997). http://dx.doi.org/10.1557/proc-469-493.

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ABSTRACTAluminium-silicon alloying is applied to dislocation-containing FZ silicon samples in order to verify if this external gettering technique is able to remove impurities trapped by these defects. Samples were scratched (front surface), bent and annealed at 750°C for 6h in order to create dislocation arrays. Standard samples and also nickel contaminated samples were investigated by light beam induced current (LBIC) mapping technique before and after alloying at 900°C for 4h with a 1 μm thick aluminium layer deposited on the backside. The LBIC technique detects the features of the dislocation array in agreement with X ray topographs. In the standard samples, the contrast is relatedto an inadvertent contamination of the samples and disappears after gettering. In the contaminated samples, dislocation contrast is higher, the aluminium treatment attenuates strongly the dislocations electrical activity but not so neatly as for the standard samples. This result is explained by the possible microprecipitation of nickel at dislocations.

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33

Reiche, M., and W. Nitzsche. "The Influence of Stresses on the Surface-Near Defect Structure." MRS Proceedings 262 (1992). http://dx.doi.org/10.1557/proc-262-621.

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ABSTRACTAn external stress field, induced at the film edge of a nitride layer, affects the defect generation in the surface-near region. Nucleation and growth of oxide precipitates and/or the generation of dislocations result in the reduction of the width of the denuded zone. The defect formation is discussed in dependence on the stress, gettering technique (annealing conditions), and on the initial oxygen concentration. The effect on electrical parameters is shown. The investigations prove that an additional oxide film (SiO2/Si3N4 films) does not relax completely the tensile stress induced by the nitride layer.

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34

Perichaud, I., and S. Martinuzzi. "Recombination Strength at Intra and Intergrain Defects in Crystalline Silicon Investigated by Low Temperature Lbic Scan Maps." MRS Proceedings 510 (January 1998). http://dx.doi.org/10.1557/proc-510-633.

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AbstractAnnealing of multicrystalline silicon wafers in argon at temperatures higher than 800°C increases the recombination strength of extended defects irreversibly, while external gettering techniques applied at the same temperatures reduce their recombination strength. It is observed that in the light beam induced current (LBIC) scan maps at 80 K the contrast of some extended defects in raw samples is enhanced and additional defects are detected. The same features of defects are revealed by the LBIC maps of raw samples at 80 K as well as at 300 K after annealing. In other words, the LBIC scan maps at low temperature detect “sleeping” defects, which do not recombine at 300 K, but which are activated by thermal treatments during processing steps. The results can be explained by the Shockley-Read-Hall statistic involving the presence of deep and shallow energy levels in the band gap associated with the impurity-defect interaction.

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35

Hall, Robert B., Allen M. Barnett, Jeff E. Cotter, David H. Ford, Alan E. Ingram, and James A. Rand. "Advanced, Thin, Polycrystalline Silicon-Film™ Solar Cells on Low-Cost Substrates." MRS Proceedings 426 (1996). http://dx.doi.org/10.1557/proc-426-117.

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AbstractThin, polycrystalline silicon solar cells have the potential for the realization of a 15%, lowcost photovoltaic product. As a photovoltaic material, polycrystalline material is abundant, benign, and electrically stable. The thin-film polycrystalline silicon solar cell design achieves high efficiency by incorporating techniques to enhance optical absorption, ensure electrical confinement, and minimize bulk recombination currents. AstroPower's approach to a thin-film polycrystalline silicon solar cell technology is based on the Silicon-Film™ process, a continuous sheet manufacturing process for the growth of thin films of polycrystalline silicon on low-cost substrates. A new barrier layer and substrate have been developed for advanced solar cell designs. External gettering with phosphorus has been employed to effect significant improvements leading to effective minority carrier diffusion lengths greater than 250 micrometers in the active silicon layer. Light trapping has been observed in 60-micrometer thick films of silicon grown on the new barrier-coated substrate. An efficiency of 12.2% in a 0.659 cm2 solar cell has been achieved with the advanced structure.

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36

Zango, Arlinda Basílio, Rik Crutzen, and Nanne de Vries. "Evaluation of a Sexual Transmitted Infection Prevention Program Among University Students in Beira City Central Mozambique: A Study Protocol." Frontiers in Reproductive Health 3 (October 28, 2021). http://dx.doi.org/10.3389/frph.2021.745309.

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Background: Unhealthy sexual behaviors, such as unprotected sexual intercourse and lack of using screening services increase cyclical transmission of sexually transmitted infections including Human Immunodeficiency Virus (HIV), especially among young adults. Hence health promotion programs can contribute to reduce the consequences, by changing (determinants of) these behaviors. Such interventions need to embrace a comprehensive approach and apply theory-and evidence-based methods. This article describes the protocol for a process and effect evaluation study of a sexually transmitted infection prevention program among university students in Beira city, central Mozambique.Methods: The on-going program at Universidade Católica de Moçambique is described following the six steps of Intervention Mapping (IM), with a focus on the evaluation plan (i.e., the final step in IM). The details regarding previous steps in the protocol are briefly described as well, as they lay the foundation for the final step. The overall study will apply a hybrid type 1 approach by assessing the effectiveness of the intervention while gettering implementation. The process evaluation will apply qualitative and quantitative methods to gain insight in the context, reach, dose delivered, dose received and recruitment. Interviews with closed and open-ended questions will be conducted with program implementers and users. A quasi-experimental non-equivalent control group design is used to evaluate the effectiveness. A cohort of university students will be followed for 6 months. Self-administrated questionnaires will be used to collect data every 3 months.Discussion: A combination of process and effect evaluation is proposed. This is a useful and fruitful procedure, since concurrent process evaluation can allow researchers to better interpret findings from the effect evaluation and understand how the intervention might replicate in similar contexts. We decided to follow the IM approach since, it is a theory-and evidence-based, systematic and detailed guide regarding what to do at every steps. A quasi-experimental non-equivalent control group design was chosen to fit the context of the study and generate outcomes with high external validity.Study Registration: 004/CIBS/2020.

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