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Journal articles on the topic 'Extended defect'

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Author: Grafiati

Published: 9 March 2023

Last updated: 10 March 2023

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1

Antonelli, A., J. F. Justo, and A. Fazzio. "Point defect interactions with extended defects in semiconductors." Physical Review B 60, no. 7 (August 15, 1999): 4711–14. http://dx.doi.org/10.1103/physrevb.60.4711.

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2

Townsend, P. D., and A. P. Rowlands. "Extended Defect Models for Thermoluminescence." Radiation Protection Dosimetry 84, no. 1 (August 1, 1999): 7–12. http://dx.doi.org/10.1093/oxfordjournals.rpd.a032800.

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3

van Brunt, Edward, Albert Burk, Daniel J. Lichtenwalner, Robert Leonard, Shadi Sabri, Donald A. Gajewski, Andrew Mackenzie, Brett Hull, Scott Allen, and John W. Palmour. "Performance and Reliability Impacts of Extended Epitaxial Defects on 4H-SiC Power Devices." Materials Science Forum 924 (June 2018): 137–42. http://dx.doi.org/10.4028/www.scientific.net/msf.924.137.

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This work explores the effects of extended epitaxial defects on 4H-SiC power devices. Advanced defect mapping techniques were used on large quantities of power device wafers, and data was aggregated to correlate device electrical characteristics to defect content. 1200 V class Junction Barrier Schottky (JBS) diodes and MOSFETs were examined in this manner; higher voltage 3.3 kV class devices were examined as well. 3C inclusions and triangular defects, as well as heavily decorated substrate scratches, were found to be device killing defects. Other defects were found to have negligible impacts on device yield, even in the case of extremely high threading dislocation content. Defect impacts on device reliability was explored on MOS-gate structures, as well as long-term device blocking tests on both MOSFETs and JBS diodes. Devices that passed on-wafer electrical parametric tests were found to operate reliably in these tests, regardless of defect content.

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4

Kulkarni, SS, AK Bewoor, and RB Ingle. "Vibration signature analysis of distributed defects in ball bearing using wavelet decomposition technique." Noise & Vibration Worldwide 48, no. 1-2 (January 2017): 7–18. http://dx.doi.org/10.1177/0957456517698318.

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The analysis of vibration signals acquired from a ball bearing with an extended type of distributed defects is carried out using wavelet decomposition technique. The influence of artificially generated defect and its location on outer and inner race of the ball bearing is observed using vibration data acquired from bearing housing. The comparison of diagnostic information from fast Fourier transform and time frequency decomposition method is made for inner and outer race of ball bearing with single as well as multiple extended defects. To decompose vibration signal acquired from bearing, db04 wavelet technique was implemented. It is observed that impulses appear with a time period corresponding to characteristic defect frequencies. The results observed from wavelet decomposition technique and fast Fourier transform reveal that the characteristic defect frequency is quite consistent even with change in location of defect. The extended type of distributed defects in the ball bearings can also be effectively diagnosed with the help of wavelet decomposition technique and fast Fourier transform.

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5

Shiryaev, Andrei A., Fabio Masiello, Jurgen Hartwig, Igor N. Kupriyanov, Tamzin A. Lafford, Sergey V. Titkov, and Yuri N. Palyanov. "X-ray topography of diamond using forbidden reflections: which defects do we really see?" Journal of Applied Crystallography 44, no. 1 (December 24, 2010): 65–72. http://dx.doi.org/10.1107/s0021889810049599.

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Natural and synthetic diamonds with various concentrations and types of point and extended defect were investigated using X-ray topography employing allowed (111, 004) and forbidden (222) reflections. On the topographs of the forbidden reflections, weak stress fields from lattice imperfections and extended defects are readily observed. Comparison of the topographs with IR maps of the distribution of point defects suggests that certain types of point defect may increase the structure factors of the forbidden reflections.

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6

Leonard, Robert, Matthew Conrad, Edward Van Brunt, Jeffrey Giles, Ed Hutchins, and Elif Balkas. "From Wafers to Bits and Back again: Using Deep Learning to Accelerate the Development and Characterization of SiC." Materials Science Forum 1004 (July 2020): 321–27. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.321.

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A non-destructive, fast and accurate extended defect counting method on large diameter SiC wafers is presented. Photoluminescence (PL) signals from extended defects on 4H-SiC substrates were correlated to the specific etch features of Basal Plane Dislocations (BPDs), Threading Screw Dislocations (TSDs), and Threading Edge Dislocations (TED). For our non-destructive technique (NDT), automated defect detection was developed using modern deep convolutional neural networks (DCNN). To train a robust network, we used our large volume data set from our selective etch method of 4H-SiC substrates, already established based on definitive correlations to Synchrotron X-Ray Topography (SXRT) [1]. The defect locations, classifications and counts determined by our DCNN correlate with the subsequently etch-delineated features and counts. Once our network is sufficiently trained we will no longer need destructive methods to characterize extended defects in 4H-SiC substrates.

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7

El Hageali, Sami A., Harvey Guthrey, Steven Johnston, Jake Soto, Bruce Odekirk, Brian P. Gorman, and Mowafak Al-Jassim. "Nondestructive microstructural investigation of defects in 4H-SiC epilayers using a multiscale luminescence analysis approach." Journal of Applied Physics 131, no. 18 (May 14, 2022): 185705. http://dx.doi.org/10.1063/5.0088313.

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The development of metal oxide semiconductor field effect transistors (MOSFETs) utilizing epitaxially grown 4H-SiC has accelerated in recent years due to their favorable properties, including a high breakdown field, high saturated electron drift velocity, and good thermal conductivity. However, extended defects in epitaxial 4H-SiC can affect both device yields and operational lifetime. In this work, we demonstrate the importance of a multiscale luminescence characterization approach to studying nondestructively extended defects in epitaxial 4H-SiC semiconducting materials. Multiscale luminescence analysis reveals different aspects of excess charge carrier recombination behavior based on the scale of a particular measurement. Combining measurements of the same extended defect area at different scales tells us more about the essential nature of that defect and its microstructure. Here, we use photoluminescence imaging and cathodoluminescence spectrum imaging to investigate the recombination behavior of several different types of extended defects, including stacking faults, inclusions, and basal plane dislocations. A detailed understanding of the optoelectronic properties of extended defects in epitaxial SiC helps elucidate the microstructure of extended defects and can provide pathways to mitigate detrimental changes during device operation related to their evolution, such as the recombination enhanced dislocation glide effect that affects SiC-based MOSFETs.

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8

Jäger, Wolfgang. "Diffusion and Defect Phenomena in III-V Semiconductors and their Investigation by Transmission Electron Microscopy." Diffusion Foundations 17 (July 2018): 29–68. http://dx.doi.org/10.4028/www.scientific.net/df.17.29.

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This article reviews the studies of diffusion and defect phenomena induced by high-concentration zinc diffusion in the single-crystal III-V compound semiconductors GaAs, GaP, GaSb and InP by methods of transmission electron microscopy and their consequences for numerical modelling of Zn (and Cd) diffusion concentration profiles. Zinc diffusion from the vapour phase into single-crystal wafers has been chosen as a model case for interstitial-substitutional dopant diffusion in these studies. The characteristics of the formation of diffusion-induced extended defects and of the temporal evolution of the defect microstructure correlate with the experimentally determined Zn profiles whose shapes depend on the chosen diffusion conditions. General phenomena observed for all semiconductors are the formation of dislocation loops, precipitates, voids, and dislocations and of Zn-rich precipitates in the diffusion regions. The formation of extended defects near the diffusion front can be explained as result of point defect supersaturations generated by interstitial-substitutional zinc exchange via the kick-out mechanism. The defects may act as sinks for dopants and as sources and sinks for point defects during the continuing diffusion process, thereby providing a path to establishing defect-mediated local point defect equilibria. The investigations established a consistent picture of the formation and temporal evolution of defects and the mechanisms of zinc diffusion in these semiconductors for diffusion conditions leading to high-concentration Zn concentrations. Based on these results, numerical modelling of anomalously shaped dopant concentration profiles leads to satisfactory quantitative results and yields information on type and charge states of the point defect species involved, also for near-surface Zn concentration profiles and the absence of extended defects.

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9

Odgaard, P. F., J. Stoustrup, and P. Andersen. "Detection of Surface Defects on Compact Discs." Journal of Control Science and Engineering 2007 (2007): 1–10. http://dx.doi.org/10.1155/2007/36319.

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Online detection of surface defects on optical discs is of high importance for the accommodation schemes handling these defects. These surface defects introduce defect components to the position measurements of focus and radial tracking positions. The respective controllers will accordingly try to suppress these defect components resulting in a wrong positioning of the optical disc drive. In this paper, two novel schemes for detecting these surface defects are introduced and compared. Both methods, which are an extended threshold scheme and a wavelet packet-based scheme, improve the detection compared with a standard threshold scheme. The extended threshold scheme detects the four tested defects with a maximal detection delay of 3 samples while the wavelet packet-based scheme has a maximal detection delay of 6 samples. Simulations of focus and radial positions in the presence of a surface defect are performed in order to inspect the importance and consequences of the size of the detection delay, from which it can be seen that focus and radial position errors increase significantly due to the defect as the detection delay increases.

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10

Al-Sabbag, Zaid Abbas, Chul Min Yeum, and Sriram Narasimhan. "Interactive defect quantification through extended reality." Advanced Engineering Informatics 51 (January 2022): 101473. http://dx.doi.org/10.1016/j.aei.2021.101473.

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11

Mobley, Steven. "Reconstructing the Extended Nasal Tip Defect." Facial Plastic Surgery 29, no. 05 (September 13, 2013): 429–43. http://dx.doi.org/10.1055/s-0033-1353385.

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12

Kireev, V. A., I. I. Razgonov, and E. B. Yakimov. "Modulated cathodoluminescence for extended defect characterization." Materials Science and Engineering: B 24, no. 1-3 (May 1994): 121–23. http://dx.doi.org/10.1016/0921-5107(94)90311-5.

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13

Kumar, Arun M., and John P. Hirth. "Analysis of extended dislocation faults." Journal of Materials Research 7, no. 7 (July 1992): 1718–21. http://dx.doi.org/10.1557/jmr.1992.1718.

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The relative stability of standard extended dislocation dipoles and some new stable defects with lozenge-shaped cross sections have been numerically estimated. An earlier study of these defects in an isotropic fee structure has been extended to the anisotropic case to assess the effect of anisotropy on the calculations. The study is further extended to the case of the L12 crystal structure of the ordered alloy Ni3Al, where the Burgers vectors are large. Results indicate that the introduction of anisotropy has a small effect in determining the relative stability of extended dislocation faults. The results also show that the large values of the Burgers vectors stabilize the arrays in Ni3Al and that the most stable defect favored is the screw lozenge array LD.

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14

Camarda, Massimo, Antonino La Magna, and Francesco La Via. "Evolution of Extended Defects during Epitaxial Growths: A Monte Carlo Study." Materials Science Forum 679-680 (March 2011): 48–54. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.48.

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Three dimensional kinetic Monte Carlo simulations on super-lattices are applied to study the evolution of stacking faults during epitaxial growths. We show that, in the case of misoriented close packed substrates, these defects can either extend throughout the entire epilayer (i.e. extended from the substrate up to the surface) or close in dislocation loops, in dependence of the deposition conditions. We explain this behavior in terms of a surface kinetic competition between these defects and the surrounding crystal: if the local growth rate of the defect is larger compared with that of the perfect crystal the defect will expands, otherwise it will closes. This mechanisms allows to explain several experimental results on homo and hetero epitaxies.

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15

Shiryaev, Andrey A., Denis A. Zolotov, Olena M. Suprun, Sergei A. Ivakhnenko, Alexey A. Averin, Alexey V. Buzmakov, Valentin V. Lysakovskyi, Irina G. Dyachkova, and Victor E. Asadchikov. "Unusual types of extended defects in synthetic high pressure–high temperature diamonds." CrystEngComm 20, no. 47 (2018): 7700–7705. http://dx.doi.org/10.1039/c8ce01499j.

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16

Elsner, J., Th Frauenheim, M. Haugk, R. Gutierrez, R. Jones, and M. I. Heggie. "Extended Defects in GaN: a Theoretical Study." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 250–56. http://dx.doi.org/10.1557/s1092578300002544.

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We present density–functional theory studies for a variety of surfaces and extended defects in GaN. According to previous theoretical studies1{100} type surfaces are electrically inactive. They play an important role in GaN since similar configurations occur at open–core screw dislocations and nanopipes as well as at the core of threading edge dislocations. Domain boundaries are found to consist of four–fold coordinated atoms and are also found to be electrically inactive. Thus, except for full–core screw dislocations which possess heavily strained bonds all investigated extended defects do not induce deep states into the band–gap. However, electrically active impurities in particular gallium vacancies and oxygen related defect complexes are found to be trapped at the stress field of the extended defects.

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17

Wang, Zhen, Hangwen Guo, Shuai Shao, Mohammad Saghayezhian, Jun Li, Rosalba Fittipaldi, Antonio Vecchione, et al. "Designing antiphase boundaries by atomic control of heterointerfaces." Proceedings of the National Academy of Sciences 115, no. 38 (August 13, 2018): 9485–90. http://dx.doi.org/10.1073/pnas.1808812115.

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Extended defects are known to have critical influences in achieving desired material performance. However, the nature of extended defect generation is highly elusive due to the presence of multiple nucleation mechanisms with close energetics. A strategy to design extended defects in a simple and clean way is thus highly desirable to advance the understanding of their role, improve material quality, and serve as a unique playground to discover new phenomena. In this work, we report an approach to create planar extended defects—antiphase boundaries (APB) —with well-defined origins via the combination of advanced growth, atomic-resolved electron microscopy, first-principals calculations, and defect theory. In La2/3Sr1/3MnO3 thin film grown on Sr2RuO4 substrate, APBs in the film naturally nucleate at the step on the substrate/film interface. For a single step, the generated APBs tend to be nearly perpendicular to the interface and propragate toward the film surface. Interestingly, when two steps are close to each other, two corresponding APBs communicate and merge together, forming a unique triangle-shaped defect domain boundary. Such behavior has been ascribed, in general, to the minimization of the surface energy of the APB. Atomic-resolved electron microscopy shows that these APBs have an intriguing antipolar structure phase, thus having the potential as a general recipe to achieve ferroelectric-like domain walls for high-density nonvolatile memory.

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18

Camarda, Massimo, Antonino La Magna, Andrea Canino, and Francesco La Via. "Study of the Evolution of Basal Plane Dislocations during Epitaxial Growth: Role of the Surface Kinetics." Materials Science Forum 645-648 (April 2010): 539–42. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.539.

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In this article, using Kinetic Monte simulations on super-lattices, we study the evolution of extended defects during epitaxial growth. Specifically we show that, in the case of misoriented, close-packed substrates, a single-layer stacking fault can either extend throughout the entire epilayer (i.e. extended from the substrate up to the surface) or close in a dislocation loop depending on the deposition conditions and the crystallographic structure of the exposed surface containing the defect. We explain this behaviour in terms of a surface kinetic competition between the defect and the surrounding, perfect crystal: if the growth rate of the defect is higher compared to the growth rate of the surrounding crystal the defect will expand, otherwise it will close. This physical mechanism allows us to explain several experimental results of homo- and heteroepitaxy.

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19

Luo, Min, Bo-Lin Li, and Dengfeng Li. "Effects of Divacancy and Extended Line Defects on the Thermal Transport Properties of Graphene Nanoribbons." Nanomaterials 9, no. 11 (November 13, 2019): 1609. http://dx.doi.org/10.3390/nano9111609.

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The effects of divacancy, including isolated defects and extended line defects (ELD), on the thermal transport properties of graphene nanoribbons (GNRs) are investigated using the Nonequilibrium Green’s function method. Different divacancy defects can effectively tune the thermal transport of GNRs and the thermal conductance is significantly reduced. The phonon scattering of a single divacancy is mostly at high frequencies while the phonon scattering at low frequencies is also strong for randomly distributed multiple divacancies. The collective effect of impurity scattering and boundary scattering is discussed, which makes the defect scattering vary with the boundary condition. The effect on thermal transport properties of a divacancy is also shown to be closely related to the cross section of the defect, the internal structure and the bonding strength inside the defect. Both low frequency and high frequency phonons are scattered by 48, d5d7 and t5t7 ELD. However, the 585 ELD has almost no influence on phonon scattering at low frequency region, resulting in the thermal conductance of GNRs with 585 ELD being 50% higher than that of randomly distributed 585 defects. All these results are valuable for the design and manufacture of graphene nanodevices.

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20

Martin, David C., Patricia M. Wilson, Jun Liao, and Marie-Christine G. Jones. "Chain-End Defects in Extended-Chain Polymer Solids." MRS Bulletin 20, no. 9 (September 1995): 47–51. http://dx.doi.org/10.1557/s088376940003493x.

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Understanding the influence of local variations in symmetry (“defects”) on the macroscopic properties of polymers in the condensed state is an ongoing experimental and theoretical challenge. Studies of defects in solids require the most information-intensive description of microstructure since it is not possible to describe a “defect” without understanding the morphology of the majority phase as well.The nature of defects in polymers has been discussed elsewhere, including other articles in this issue of the MRS Bulletin. The structure, properties, and mobility of defects in polymers are all profoundly influenced by the covalently bonded chain backbone. In polymers, there are unique defects such as chain folds and twists that have no obvious analogue in materials of small molar mass. Here, we examine a particular type of defect that is present in all polymer systems with finite molecular weight: chain ends. Our interest will focus on chain ends in polymers that are essentially fully extended parallel to a certain preferred orientation axis.The extended-chain microstructure was originally envisioned by Staudinger as a “continuous crystal” in which high-molecular-weight polymers would be perfectly oriented and close-packed together laterally. Extended-chain polymer fibers such as poly(paraphenylene terephthalamide) (PPTA or Kevlar®), gelspun polyethylene (Spectra®), and the rigid-rod polymers poly(paraphenylene benzobisthiazole) (PBZT) and poly(paraphenylene benzobisoxazole (PBZO or PBO) (Structure 1) closely approach this conceptual limit. The outstanding tensile moduli (100–400 GPa) and tensile strengths (2–4 GPa or higher) of these fibers have generated considerable interest for lightweight structural applications. Extendedchain polymers can also be prepared by solid-state polymerizations of appropriate monomer precursors. Perhaps the most familiar of this latter class of materials are the polydi-acetylenes, first developed by Wegner.

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21

Orlowski, B. A., K. Gwozdz, K. Goscinski, S. Chusnutdinow, M. Galicka, E. Guziewicz, and B. J. Kowalski. "Extended Defect States in CdTe/ZnTe Photojunction." Acta Physica Polonica A 141, no. 5 (May 2022): 548–53. http://dx.doi.org/10.12693/aphyspola.141.548.

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22

Vanhellemont, Jan, Olivier De Gryse, and Paul Clauws. "Precipitation and extended defect formation in silicon." physica status solidi (c) 2, no. 6 (April 2005): 1958–62. http://dx.doi.org/10.1002/pssc.200460536.

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23

Kahaly, Mousumi Upadhyay, Satinder P. Singh, and Umesh V. Waghmare. "Carbon Nanotubes with an Extended Line Defect." Small 4, no. 12 (December 2008): 2209–13. http://dx.doi.org/10.1002/smll.200701039.

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24

CHRISTOFFERSEN, R., and P. DAVIES. "Extended defect intergrowths in Zr1-xTi1+xO4☆." Solid State Ionics 57, no. 1-2 (September 1992): 59–69. http://dx.doi.org/10.1016/0167-2738(92)90064-v.

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25

Paprottka, Felix J., Nicco Krezdorn, Ramin Ipaktchi, Christine Radtke, and Peter M. Vogt. "Plastic reconstructive surgery techniques for defect coverage of extended skull base defects." Journal of Plastic, Reconstructive & Aesthetic Surgery 69, no. 9 (September 2016): 1266–74. http://dx.doi.org/10.1016/j.bjps.2016.06.008.

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26

Kamei, Koji, Ling Guo, Kenji Momose, and Hitoshi Osawa. "Structure of Straight-Line Defect and its Effect on the Electrical Properties of Schottky Barrier Diodes." Materials Science Forum 858 (May 2016): 213–16. http://dx.doi.org/10.4028/www.scientific.net/msf.858.213.

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We have investigated the “straight-line defect,” which has not been classified separately and is quite similar to the carrot defect. We found that the straight-line defect differed structurally from the carrot defect. The presence of a particle on the substrate-epi layer interface seemed to be the cause of the defect; a layer of poly-type (3C-SiC) extended from the particle to the epi-layer surface. The straight-line defect likely resulted from shape change from the 3C-SiC triangular defect. This change in shape from triangular to straight-line defects depended on the C/Si ratio. To investigate the electrical characteristics, we fabricated a Schottky barrier diode (SBD) structure on a silicon carbide (SiC) epi wafer. With application of a high voltage, destruction occurred on both the upstream and the downstream side of the step flow of straight-line defects in the reverse voltage test. This reverse direction characteristic differed from that observed with triangular defects.

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27

Elsherif, Osama S., Karen D. Vernon-Parry, Jan H. Evans-Freeman, and Paul W. May. "Electrical Characterisation of Defects in Polycrystalline B-Doped Diamond Films." Materials Science Forum 717-720 (May 2012): 1315–18. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1315.

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Admittance spectroscopy (AS) and deep level transient spectroscopy (DLTS) have been applied to B-doped thin polycrystalline diamond films deposited on p+-silicon by hot filament chemical vapour deposition. Films with two boron concentrations (1.5×10^19 cm-3 and 4×10^19 cm-3) were selected to study the effect of B concentration on the electronic states in CVD-diamond. We have investigated whether these deep states arise from point or extended defects. DLTS and AS find two hole traps, E1 (0.29±0.03 eV) and E2 (0.53±0.07 eV), in both films. A third level, E3 (0.36±0.02 eV) was also detected in the more highly doped film. The defect levels E1 and E2 exhibited behaviour typical of extended defects, which we suggest may be due to B segregated to the grain boundaries. In contrast, the defect level E3 exhibited behaviour characteristic of an isolated point defect, which we attribute to B-related centres in bulk diamond.

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28

Van Tendeloo, G., M.-O. Ruault, H. Bernas, and M. Gasgnier. "High resolution electron microscopy of ion-irradiated GdBa2Cu3O7." Journal of Materials Research 6, no. 4 (April 1991): 677–81. http://dx.doi.org/10.1557/jmr.1991.0677.

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GdBa2Cu3O7 crystals were irradiated at room temperature with 200 keV Ne ions and 300 keV Xe ions. In situ standard TEM and further HREM studies show two types of extended defects: (i) mobile extended defects, which account for the preferential defect pinning to twin boundaries reported earlier. These defects are rapidly recovered and difficult to observe by HREM investigations; (ii) stable amorphous areas which are clearly identified by HREM observations. Their overlapping and aggregation conceivably lead to amorphization of the sample.

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29

Patil, Bhushan R., Chandrashekhar Wahegaonkar, Nikhil Agarkhedkar, and Bharat Bhushan Dogra. "Extended reverse sural artery pedicle flap: a versatile and reproducible option for coverage of ankle and foot defects." International Journal of Research in Medical Sciences 7, no. 3 (February 27, 2019): 866. http://dx.doi.org/10.18203/2320-6012.ijrms20190938.

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Background: Coverage of soft tissue defects around distal third of the leg, particularly ankle and foot is a common situation faced by a plastic and reconstructive surgeon. Options available for such defects are limited due to scarcity of additional soft tissue that can be used without exposing tendons or bone. Associated conditions such as major vascular compromise, comorbidities and lack of facilities or expertise make free tissue transfer less preferred. Distally based sural artery flap has been a frequently used flap in such conditions, easy to perform and has reproducible results. We extended the reach of the flap and reproduced the results.Methods: We performed extended reverse sural artery pedicled flaps in 19 patients who presented to us between 2015 to 2017 with soft tissue defects around ankle and foot. Patients included 15 post RTA, 2 diabetic foot, 1 post resection defect and 1 post burn contracture release defect. Size of the defect ranged between 8x6cm to 14x10cm. Average follow up period was ranging from 8 months to 2.5 years.Results: All the flaps healed well without any obvious complications except one patient in whom marginal necrosis (2 cm margin of distal most flap) was observed and was secondarily treated with skin grafting.Conclusions: We observed that extended reverse sural pedicle flap is a rapid, reliable option for coverage of soft tissue defects around ankle and heel, sparing major vessel compromise and lengthy surgical procedure during free tissue transfer. This flap should be the first option for the patients with trauma and defects over weight bearing foot in whom peroneal axis vessels are preserved.

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30

Tao, Xian, Dapeng Zhang, Wenzhi Ma, Xilong Liu, and De Xu. "Automatic Metallic Surface Defect Detection and Recognition with Convolutional Neural Networks." Applied Sciences 8, no. 9 (September 6, 2018): 1575. http://dx.doi.org/10.3390/app8091575.

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Automatic metallic surface defect inspection has received increased attention in relation to the quality control of industrial products. Metallic defect detection is usually performed against complex industrial scenarios, presenting an interesting but challenging problem. Traditional methods are based on image processing or shallow machine learning techniques, but these can only detect defects under specific detection conditions, such as obvious defect contours with strong contrast and low noise, at certain scales, or under specific illumination conditions. This paper discusses the automatic detection of metallic defects with a twofold procedure that accurately localizes and classifies defects appearing in input images captured from real industrial environments. A novel cascaded autoencoder (CASAE) architecture is designed for segmenting and localizing defects. The cascading network transforms the input defect image into a pixel-wise prediction mask based on semantic segmentation. The defect regions of segmented results are classified into their specific classes via a compact convolutional neural network (CNN). Metallic defects under various conditions can be successfully detected using an industrial dataset. The experimental results demonstrate that this method meets the robustness and accuracy requirements for metallic defect detection. Meanwhile, it can also be extended to other detection applications.

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31

CAUDRELIER, V. "ON A SYSTEMATIC APPROACH TO DEFECTS IN CLASSICAL INTEGRABLE FIELD THEORIES." International Journal of Geometric Methods in Modern Physics 05, no. 07 (November 2008): 1085–108. http://dx.doi.org/10.1142/s0219887808003223.

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We present an inverse scattering approach to defects in classical integrable field theories. Integrability is proved systematically by constructing the generating function of the infinite set of modified integrals of motion. The contribution of the defect to all orders is explicitely identified in terms of a defect matrix. The underlying geometric picture is that those defects correspond to Bäcklund transformations localized at a given point. A classification of defect matrices as well as the corresponding defect conditions is performed. The method is applied to a collection of well-known integrable models and previous results are recovered (and extended) directly as special cases. Finally, a brief discussion of the classical r-matrix approach in this context shows the relation to inhomogeneous lattice models and the need to resort to lattice regularizations of integrable field theories with defects.

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32

Weber, Jonas, Heiko B. Weber, and Michael Krieger. "On Deep Level Transient Spectroscopy of Extended Defects in n-Type 4H-SiC." Materials Science Forum 897 (May 2017): 201–4. http://dx.doi.org/10.4028/www.scientific.net/msf.897.201.

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We have performed capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) measurements on Schottky contacts fabricated on triangular defects in 4H-SiC epitaxial layers. These measurements are a case study on the effect of a specific extended defect on the DLTS spectrum in order to contribute to the physical understanding of curious features occasionally observed in DLTS spectra. Our measurements reveal an inversion of the DLTS signal depending on applied voltages and filling pulse lengths, and a step in the C-V characteristic of the Schottky diode. We present a model that qualitatively describes the experimentally obtained data. In this model, we assume that stacking faults within a triangular defect form quantum wells, which can capture electrons from other defects during the DLTS measurement leading to the inversion of the DLTS spectrum. Moreover, by calculating the differential capacitance using a self-consistent Schrödinger-Poisson-Solver, the step in the C-V measurements is reproduced by our model.

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33

Chirva, Yu V., M. I. Babich, and Murad Al-Hanih. "Bone plasty of extended fiber defect in orthopedic reconstructive-reconstructive surgery using original tissueengineering graft (clinical case)." Genes & Cells 15, no. 3 (September 15, 2020): 120–24. http://dx.doi.org/10.23868/202011018.

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A case of successful replacement of defects in the calcaneus and fibula in a patient with calcaneal osteoblastoclastoma using a tissue-engineered scaffold is described. The treatment used a scaffold from a collagen biomimetic and autobone. The operation was performed in two stages. At the first stage, the tumor was removed, the defect was made of the fibula. After that, the defect of the fibula was 12 cm. He was filled up with a scaffold. In the second stage, the calcaneal cavity was minimally invasively filled with the same scaffold. The result was studied after 3, 6 and 12 months. After a year, good anatomical results were obtained, the bone defect was filled.

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34

Park, Hyoungki, and John W. Wilkins. "A topological point defect regulates the evolution of extended defects in irradiated silicon." Applied Physics Letters 98, no. 17 (April 25, 2011): 171915. http://dx.doi.org/10.1063/1.3585656.

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Gilliard, Kandis Leslie, and Edmund G. Seebauer. "Manipulation of native point defect behavior in rutile TiO2via surfaces and extended defects." Journal of Physics: Condensed Matter 29, no. 44 (October 13, 2017): 445002. http://dx.doi.org/10.1088/1361-648x/aa89ba.

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Berwian, Patrick, Daniel Kaminzky, Katharina Roßhirt, Birgit Kallinger, Jochen Friedrich, Steffen Oppel, Adrian Schneider, and Michael Schütz. "Imaging Defect Luminescence of 4H-SiC by Ultraviolet-Photoluminescence." Solid State Phenomena 242 (October 2015): 484–89. http://dx.doi.org/10.4028/www.scientific.net/ssp.242.484.

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A new tool for characterizing extended defects in Silicon Carbide (SiC) based on photoluminescence imaging is presented. In contrast to other techniques like Defect Selective Etching (DSE) or X-ray topography this technique is both fast and non-destructive. It is shown that several defect types, especially those relevant for the performance of electronic devices on SiC (i.e. Stacking Faults and Basal Plane Dislocations) can be investigated. The tool is therefore usable in research and development for a quick feedback on process related defect generation as well as in a production environment for quality control.

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Das, Hrishikesh, Swapna Sunkari, Joshua Justice, and Danielle Hamann. "A Deeper Look into the Effects of Extended Defects in SiC Epitaxial Layers on Device Performance and Reliability." Materials Science Forum 1062 (May 31, 2022): 406–10. http://dx.doi.org/10.4028/p-sctxav.

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The detection and classification of SiC Epitaxial extended defects was refined to separate out defective areas that influence device characteristics. Die level defect localization along with defect area calculations were performed on millions of die across product groups. A clear impact of non-killer defects was observed, especially with increasing density and defective area in the die. Specifically, all types of stacking faults caused higher leakage, lower blocking voltage, and increases in ON resistance and threshold leakage. Furthermore, MOSFET devices were affected to a much larger extent than diode devices. Testing die with higher numbers of defects provides insight on device reliability. Analyzing devices with specific counts of BPDs let us quantify the amount of bipolar degradation caused drift by product/voltage classes.

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Gruber, Gernot, Markus Koch, Gregor Pobegen, Michael Nelhiebel, and Peter Hadley. "An Extended EDMR Setup for SiC Defect Characterization." Materials Science Forum 740-742 (January 2013): 365–68. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.365.

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Only a few methods exist to observe, identify, and localize defects in SiC devices. These defects are a major limit for device performance and reliability. Presented is an improved experimental setup to investigate deep level defects using electrically detected magnetic resonance (EDMR). The method applied in this study exploits the simultaneous in-situ electron spin resonance (ESR) measurement of a standard sample (DPPH) to calibrate the magnetic field. The functionality is shown by comparing the data of an ion implanted SiC diode to results from a recent study . The in-situ B-field calibration is found to increase the accuracy of EDMR measurements by a factor of 2.5.

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Liu, Mingzhe, Ruili Wang, Mao-Bin Hu, Rui Jiang, and Yang Gao. "Synchronous asymmetric exclusion processes with an extended defect." Physics Letters A 374, no. 13-14 (March 2010): 1407–13. http://dx.doi.org/10.1016/j.physleta.2010.01.001.

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Orlov, V. I., and E. B. Yakimov. "Extended defect study in Si: EBIC versus LBIC." Superlattices and Microstructures 99 (November 2016): 202–7. http://dx.doi.org/10.1016/j.spmi.2016.02.040.

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41

Rousselet, S., A. Declémy, M. F. Beaufort, M. L. David, and J. F. Barbot. "About extended defect formation in helium-implanted germanium." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 272 (February 2012): 309–12. http://dx.doi.org/10.1016/j.nimb.2011.01.089.

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42

Hinrichsen, Haye. "The Ising quantum chain with an extended defect." Nuclear Physics B 336, no. 3 (June 1990): 377–95. http://dx.doi.org/10.1016/0550-3213(90)90434-f.

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Polák, Jaroslav, and Jiří Man. "Cyclic Slip Localization and Crack Initiation in Crystalline Materials." Advanced Materials Research 891-892 (March 2014): 452–57. http://dx.doi.org/10.4028/www.scientific.net/amr.891-892.452.

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Cyclic plastic straining in crystalline materials is localized to persistent slip bands (PSBs) and results in formation of persistent slip markings (PSMs) consisting of extrusions and intrusions. Intensive plastic strain in PSBs results in dislocation interactions and formation of point defects. The extended model based on point defect formation, migration and annihilation is presented describing surface relief formation in the form of extrusion-intrusion pairs. Point defect migration and resulting mass transfer is the principle source of cyclic slip irreversibility leading to crack-like defects - intrusions. Fatigue cracks start in the tip of sharp intrusions.

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44

Chung, Gil Yong, Mark J. Loboda, Mike F. MacMillan, Jian Wei Wan, and Darren M. Hansen. "Carrier Lifetime Analysis by Microwave Photoconductive Decay (μ-PCD) for 4H SiC Epitaxial Wafers." Materials Science Forum 556-557 (September 2007): 323–26. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.323.

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Excess carrier lifetimes in 4H SiC epitaxial wafers were characterized by microwave photoconductive decay (o/PCD). The measured decay compromised of surface and bulk recombination curves have fast and slow components. Measured lifetimes are not changed with various surface passivation techniques. High resolution lifetime maps show good correlation with stress birefringence images and lower lifetime around extended material defects like grainboundaries, defect clusters, edge defects and polytype switching bands. Chlorosilane based CVD epiwafers show higher bulk lifetime values than standard silane based CVD materials due to less bulk lifetime defect density.

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45

Sklad, P. S., and J. Bentley. "Analysis of a new type of extended defect in αAl2O3." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 4 (August 1990): 464–65. http://dx.doi.org/10.1017/s0424820100175454.

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The recrystallization behavior of amorphous surface layers produced on single crystal [0001] αAl2O3 by implantation at -185°C with 4 x 1016 Al/cm2 at 90 keV and 6 x 1016 O/cm2 at 55 keV is being investigated by transmission electron microscopy (TEM). The microstructural development which occurs during annealing of bulk specimens in the temperature range from 800 to 1200°C has been characterized by conventional imaging and diffraction techniques. These studies demonstrate that the amorphous A12O3 first transforms to γ-Al2O3, a cubic transitional form, which in turn transforms to α-Al2O3 which is epitactical with the substrate. The as-implanted microstructure is characterized by a featureless amorphous region extending from the surface to a depth of 170 nm, Fig. la. The interface between the amorphous region and the crystalline substrate corresponds to the end of the projected range of the implanted ions and is characterized by a high density of small defects. These defects are similar to those seen in Al2O3 after neutron or ion irradiation and are probably small dislocation loops or defect clusters. The dominant microstructural features in specimens annealed to produce α-Al2O3 are a band of dislocation loops near the original crystalline-amorphous interface and a population of faceted cavities distributed throughout the implanted layer, Fig. 1b.

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46

Gayko, G. V., T. I. Osadchuk, A. V. Kalashnikov, I. A. Lazariev, and O. V. Kalashnikov. "RESULTS OF MATHEMATICAL MODELING OF TENSION-DEFORMED CONDITION OF COMPONENTS OF KNEE JOINT ENDOPROSTHESIS IN CONDITIONS OF PRESENCE OF DEFECT EFFECTS." Problems of traumatology and osteosynthesis, no. 1(19) (December 10, 2020): 3–19. http://dx.doi.org/10.51309/2411-6858-2020-19-1-3-19.

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Summary. Gonarthrosis is reported in 50.6–54.5% of cases among patients with the lower extremities large joints’ dystrophic diseases. In 86% of cases, it affects people of working age, and in 6.5–14.6% - leads to disability. That is why, gonarthrosis is an acute medical and social problem. However, despite the large number of surgeries, the matter of choosing a method (bone plastic, metal insertion) to cover a bone bed’s defects for total knee arthroplasty (KJ) is still ambiguous. Objective: to conduct a computer simulation of strains occurring upon a regular and extended tibial stem of a knee prosthesis, depending on different tibial condylar defects. Materials and methods: the laboratory of biomechanics of the SI “ITO NAMS of Ukraine” created a computer model to study stress-deformed conditions of a KJ endoprosthesis upon a varus deformity of an extremity and knee arthroplasty with a regular and an extended tibial stem, if a bone defect has been replaced with a bone autograft of 5 and 10 mm. Results. It was determined that if a knee arthroplasty occurs upon conditions of a varus deformity, with an internal tibial condyle’s defect, the defect can be filled with an autograft insert up to 5 mm high, and a regular (short) prosthetic stem is suitable. If such a lesion is from 5 mm to 13.5 mm, an extended prosthetic stem is biomechanically justified. If a height of the defect exceeds 13.5 mm, it must be replaced with a massive metal insert. Practical essence: the study will be helpful to elaborate a differentiated approach to various tibial condyles’ defects treatment in the course of the total knee arthroplasty. Conclusions. The implementation of recommendations resulting from this study will increase the efficiency of treatment to this severe category of patients.

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Couceiro, José, Mariangeles De la Red-Gallego, Luis Yeste, Higinio Ayala, Manuel Sanchez-Crespo, Olga Velez, Rebeca Barcenilla, and Fernando Del Canto. "The Bilobed Racquet Flap or Extended Seagull Flap for Thumb Reconstruction: A Case Report." Journal of Hand Surgery (Asian-Pacific Volume) 23, no. 01 (February 6, 2018): 128–31. http://dx.doi.org/10.1142/s2424835518720050.

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The treatment of extensive soft tissue defects in the thumb with dorsal metacarpal artery flaps has been previously reported in the literature. Island flaps from the dorsum of the index and long fingers have been the subject of many reports and studies. However, when the defect involves the whole thumb, a 360° circumferential defect, standard first or second dorsal metacarpal artery flaps are usually insufficient. There are fewer reports on the use of bilobed flaps for this application and we have found no reports on the use of bilobed racquet flaps or extended seagull flaps as treatment for this condition. We report the salvage of a thumb degloving injury with use of a bilobed racquet flap.

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Tatar, Burak Erguün, Fahri Sabancıoğullarından, Caner Gelbal, and Mehmet Bozkurt. "Use of Heparin Cream for Venous Congestion in the Extended Reverse Metacarpal Artery Flap: A Case Report." Archives of Plastic Surgery 49, no. 05 (September 2022): 663–67. http://dx.doi.org/10.1055/s-0042-1756344.

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AbstractFinger dorsum defects are a challenging situation. Many reconstruction methods are used in these defects. Extended reverse dorsal metacarpal artery (RDMA) flap is used in dorsal finger reconstruction. Venous congestion in this flap is most important cause of flap failure. In this case, we presented a case in which we used heparin cream due to development of venous congestion in our patient who underwent an extended RDMA flap. A 24-year-old female patient presented to the emergency department with a defect of dorsal of left-hand fourth finger. Defect was covered with an extended RDMA flap. On postoperative first day, venous congestion was observed, and heparin cream was applied three times a day on flap. The signs of venous congestion were regressed. Tissue healed as a result of superficial epidermolysis and skin grafting. No functional limitation was observed in sixth-month postoperative control. Venous congestion is the most important cause of flap failure of extended RDMA flaps. Generally, subcutaneous heparin administration and leech therapy are used. In our case, heparin was applied as a cream instead of subcutaneously, and flap healing was observed as a result of superficial epidermolysis. Heparin cream application can also be used as a treatment option in flaps with venous congestion.

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Wu, Yifeng, Kelsey J. Mirrielees, and Douglas L. Irving. "On native point defects in ZnSe." Applied Physics Letters 120, no. 23 (June 6, 2022): 232102. http://dx.doi.org/10.1063/5.0092736.

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Aiming at a fundamental understanding of the defect chemistry of pure ZnSe for optical and quantum applications, systematic density functional theory calculations with hybrid exchange-correlation functionals were performed to build an accurate database of native defects in ZnSe, including isolated defects and first nearest-neighbor defect–defect complexes. From the defect formation energies, zinc vacancy is found to be the most prevalent defect as the Fermi level approaches the conduction band edge, while zinc interstitial in the selenium tetrahedron and selenium vacancy become the most prevalent defects as the Fermi level approaches the valence band maximum. The divacancy complex, consisting of first nearest-neighboring zinc and selenium vacancies, is also found to have a favorable binding energy across the entire bandgap. Its formation energy is, however, always higher than either the isolated zinc or selenium vacancy, meaning it will never be the predominant defect in equilibrium. Finally, a point defect with extended spin coherence in Fluorine-implanted ZnSe was recently discovered, and it was found to exhibit a broad emission peak centered at 2.28 eV. The identity of this defect was determined to be either zinc vacancy or its associated complex according to the electron paramagnetic resonance measurements. Explicit simulations of the optical signatures of all zinc vacancy-related native defects were conducted here, showing that both zinc vacancy and divacancy are the most likely native defect contributors to that peak.

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50

Harris, J. H., R. A. Youngman, and R. G. Teller. "On the nature of the oxygen-related defect in aluminum nitride." Journal of Materials Research 5, no. 8 (August 1990): 1763–73. http://dx.doi.org/10.1557/jmr.1990.1763.

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The oxygen-related defect in an aluminum nitride (AIN) single crystal and in polycrystalline ceramics is investigated utilizing photoluminescence spectroscopy, thermal conductivity measurements, x-ray diffraction lattice parameter measurements, and transmission electron microscopy. The results of these measurements indicate that at oxygen concentrations near 0.75 at.%, a transition in the oxygen accommodating defect occurs. On both sides of this transition, simple structural models for the oxygen defect are proposed and shown to be in good agreement with the thermal conductivity and lattice parameter measurements, and to be consistent with the formation of various extended defects (e.g., inversion domain boundaries) at higher oxygen concentrations.

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