Relevant bibliographies by topics / Exotic Transition Metal Oxides

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Academic literature on the topic 'Exotic Transition Metal Oxides'

Author: Grafiati
Published: 7 September 2023

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Journal articles on the topic "Exotic Transition Metal Oxides"

1

Rodenbücher, Christian, and Kristof Szot. "Electronic Phenomena of Transition Metal Oxides." Crystals 11, no. 3 (2021): 256. http://dx.doi.org/10.3390/cryst11030256.

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Transition metal oxides with ABO3 or BO2 structures have become one of the major research fields in solid state science, as they exhibit an impressive variety of unusual and exotic phenomena with potential for their exploitation in real-world applications [...]
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Kushwaha, Pallavi, Veronika Sunko, Philip J. W. Moll, et al. "Nearly free electrons in a 5ddelafossite oxide metal." Science Advances 1, no. 9 (2015): e1500692. http://dx.doi.org/10.1126/sciadv.1500692.

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Understanding the role of electron correlations in strong spin-orbit transition-metal oxides is key to the realization of numerous exotic phases including spin-orbit–assisted Mott insulators, correlated topological solids, and prospective new high-temperature superconductors. To date, most attention has been focused on the 5diridium-based oxides. We instead consider the Pt-based delafossite oxide PtCoO2. Our transport measurements, performed on single-crystal samples etched to well-defined geometries using focused ion beam techniques, yield a room temperature resistivity of only 2.1 microhm·cm
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3

Hattori, Azusa N., Ai I. Osaka, Ken Hattori, et al. "Investigation of Statistical Metal-Insulator Transition Properties of Electronic Domains in Spatially Confined VO2 Nanostructure." Crystals 10, no. 8 (2020): 631. http://dx.doi.org/10.3390/cryst10080631.

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Functional oxides with strongly correlated electron systems, such as vanadium dioxide, manganite, and so on, show a metal-insulator transition and an insulator-metal transition (MIT and IMT) with a change in conductivity of several orders of magnitude. Since the discovery of phase separation during transition processes, many researchers have been trying to capture a nanoscale electronic domain and investigate its exotic properties. To understand the exotic properties of the nanoscale electronic domain, we studied the MIT and IMT properties for the VO2 electronic domains confined into a 20 nm l
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4

ALONSO, J. A., M. J. MARTÍNEZ-LOPE, C. DE LA CALLE, et al. "HIGH-PRESSURE SYNTHESIS AND CHARACTERIZATION OF NEW METASTABLE OXIDES." Functional Materials Letters 04, no. 04 (2011): 333–36. http://dx.doi.org/10.1142/s1793604711002123.

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Many transition-metal oxides in elevated valence states [e.g. Mn(V), Co(IV), Ni(III), Cu(III) ] present a metastable character and, given the difficulty of their synthesis, have been relatively little studied. However, they are very interesting materials presenting strong electronic correlations that are bound to exotic properties such as superconductivity, metal behavior, metal–insulator transitions or colossal magnetoresistance. The metastability of these compounds requires special synthesis conditions such as the application of high pressure. In the last years, we have prepared and investig
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5

Niu, Xu, Bin-Bin Chen, Ni Zhong, Ping-Hua Xiang, and Chun-Gang Duan. "Topological Hall effect in SrRuO3 thin films and heterostructures." Journal of Physics: Condensed Matter 34, no. 24 (2022): 244001. http://dx.doi.org/10.1088/1361-648x/ac60d0.

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Abstract Transition metal oxides hold a wide spectrum of fascinating properties endowed by the strong electron correlations. In 4d and 5d oxides, exotic phases can be realized with the involvement of strong spin–orbit coupling (SOC), such as unconventional magnetism and topological superconductivity. Recently, topological Hall effects (THEs) and magnetic skyrmions have been uncovered in SrRuO3 thin films and heterostructures, where the presence of SOC and inversion symmetry breaking at the interface are believed to play a key role. Realization of magnetic skyrmions in oxides not only offers a
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6

Jiang, Xingyu, Yiren Liu, Yipeng Zang, et al. "Uniaxial strain induced anisotropic bandgap engineering in freestanding BiFeO3 films." APL Materials 10, no. 9 (2022): 091110. http://dx.doi.org/10.1063/5.0095955.

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Strain engineering has been demonstrated to be an effective knob to tune the bandgap in perovskite oxides, which is highly desired for applications in optics, optoelectronics, and ferroelectric photovoltaics. Multiferroic BiFeO3 exhibits great potential in photovoltaic applications and its bandgap engineering is of great interest. However, the mechanism of strain induced bandgap engineering in BiFeO3 remains elusive to date. Here, we perform in situ ellipsometry measurements to investigate the bandgap evolution as a function of uniaxial strain on freestanding BiFeO3 films. Exotic anisotropic b
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7

Yin, Zongyou, Moshe Tordjman, Youngtack Lee, Alon Vardi, Rafi Kalish, and Jesús A. del Alamo. "Enhanced transport in transistor by tuning transition-metal oxide electronic states interfaced with diamond." Science Advances 4, no. 9 (2018): eaau0480. http://dx.doi.org/10.1126/sciadv.aau0480.

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High electron affinity transition-metal oxides (TMOs) have gained a central role in two-dimensional (2D) electronics by enabling unprecedented surface charge doping efficiency in numerous exotic 2D solid-state semiconductors. Among them, diamond-based 2D electronics are entering a new era by using TMOs as surface acceptors instead of previous molecular-like unstable acceptors. Similarly, surface-doped diamond with TMOs has recently yielded record sheet hole concentrations (2 × 1014 cm−2) and launched the quest for its implementation in microelectronic devices. Regrettably, field-effect transis
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8

Takahashi, K. S., Y. Tokura, and M. Kawasaki. "Metal–insulator transitions in dimensionality controlled LaxSr1−xVO3 films." APL Materials 10, no. 11 (2022): 111114. http://dx.doi.org/10.1063/5.0122864.

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Carrier doping into two dimensional (2D) Mott insulators is one of the prospective strategies for exploring exotic quantum phenomena. Although ultra-thin oxide films are one such target, it is vitally important to fabricate well-defined and clean samples to extract intrinsic properties. In this study, we start from establishing the growth of clean SrVO3 films with a low residual resistivity (∼4 × 10−7 Ω cm) and a high mobility (∼103 cm2/V s). By confining them with SrTiO3 barrier layers, the Mott insulator state appears at the thickness below 3 unit cells (u.c.). By the electron doping in the
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9

Merckling, Clement, Islam Ahmed, Tsang Hsuan Tsang, Moloud Kaviani, Jan Genoe, and Stefan De Gendt. "(Invited) Integrated Perovskites Oxides on Silicon: From Optical to Quantum Applications." ECS Meeting Abstracts MA2022-01, no. 19 (2022): 1060. http://dx.doi.org/10.1149/ma2022-01191060mtgabs.

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With the slowing down of Moore’s law, related to conventional scaling of integrated circuits, alternative technologies will require research effort for pushing the limits of new generations of electronic or photonic devices. Perovskite oxides with the ABO3 chemical formula have a very wide range of interesting intrinsic properties such as metal-insulator transition, ferroelectricity, pyroelectricity, piezoelectricity, ferromagnetic and superconductivity. For the integration of such oxides, it is of great interest to combine their properties with traditional electronic, memory and optical devic
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10

Rao, C. N. R. "Transition Metal Oxides." Annual Review of Physical Chemistry 40, no. 1 (1989): 291–326. http://dx.doi.org/10.1146/annurev.pc.40.100189.001451.

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