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Journal articles on the topic 'ESD physics'

Author: Grafiati

Published: 6 September 2023

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1

Jauhariyah, M. N. R., B. K. Prahani, K. Syahidi, U. A. Deta, N. A. Lestari, and E. Hariyono. "ESD for physics: how to infuse education for sustainable development (ESD) to the physics curricula?" Journal of Physics: Conference Series 1747, no. 1 (2021): 012032. http://dx.doi.org/10.1088/1742-6596/1747/1/012032.

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2

Krabbenborg, Benno, Reinier Beltman, Philip Wolbert, and Ton Mouthaan. "Physics of electro-thermal effects in ESD protection devices." Journal of Electrostatics 28, no. 3 (1992): 285–99. http://dx.doi.org/10.1016/0304-3886(92)90077-7.

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3

Alvarez, D., M. J. Abou-Khalil, C. Russ, et al. "Analysis of ESD failure mechanism in 65nm bulk CMOS ESD NMOSFETs with ESD implant." Microelectronics Reliability 46, no. 9-11 (2006): 1597–602. http://dx.doi.org/10.1016/j.microrel.2006.07.041.

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4

Paul, Milova, Christian Russ, B. Sampath Kumar, Harald Gossner, and Mayank Shrivastava. "Physics of Current Filamentation in ggNMOS Devices Under ESD Condition Revisited." IEEE Transactions on Electron Devices 65, no. 7 (2018): 2981–89. http://dx.doi.org/10.1109/ted.2018.2835831.

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5

Sinha, Dheeraj Kumar, and Amitabh Chatterjee. "SPICE level implementation of physics of filamentation in ESD protection devices." Microelectronics Reliability 79 (December 2017): 239–47. http://dx.doi.org/10.1016/j.microrel.2017.05.022.

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6

Xu, Ke, Xing Chen, and Zhenzhen Chen. "A Physics-based Transient Simulation and Modeling Method for Wide-frequency Electrical Overstress Including ESD." Applied Computational Electromagnetics Society 36, no. 5 (2021): 505–12. http://dx.doi.org/10.47037/2020.aces.j.360503.

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Circuits design that meets various IEC electrical overstress (EOS) standards is still a challenge, for that different kinds of EOS are at different frequency bands. In this paper, a physics-based transient simulation and modeling method is proposed, which can simulate wide-frequency EOS including electrostatic discharge (ESD) and AC characteristics. In this method, the physical model is used to characterize the nonlinear semiconductor devices in the finite-difference time-domain (FDTD)-SPICE co-simulation. Moreover, the modeling and physical parameters extraction method of the ESD protect devi

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7

Liu, Xiao Yu, Jiang Shao, Xing Hao Wang, and Feng Ming Lu. "Research Progress on Electrostatic Discharge Failure Models in Semiconductor Materials." Advanced Materials Research 548 (July 2012): 527–31. http://dx.doi.org/10.4028/www.scientific.net/amr.548.527.

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Electrostatic discharge (ESD) is a single, fast, high current transfer of electrostatic charge between two objects at different electrostatic potentials, and it is one of the most important failure mechanisms in integrated circuits due to their complex operation condition. The modes, mechanism, and models of the ESD failure were discussed. Firstly failure modes of ESD were classified and the failure mechanisms were described. Then three failure models including Wunsch and Bell model, Speakman model and Tasca model were summarized. The differences of the assumption and application area of these

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8

Rushby, Nick. "Editorial: Recent references." Education and Self Development 17, no. 1 (2022): 6–7. http://dx.doi.org/10.26907/esd.17.1.01.

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In addition to editing Education & Self Development I am on the reviewer panel for other journals in the field. I never begrudge the work involved in reviewing: it gives me insights into what other researchers are thinking, long before their work reaches the stage of being published. It also gives me a way of moderating the reviewing activities of E&SD so that we are matching the standards of other journals. This piece was prompted by a discussion between the authors and reviewers of an article submitted to one of these journals. It concerned the recency of the references and I recalle

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9

Rushby, Nick. "Editorial: Recent references." Education and Self Development 17, no. 1 (2022): 8–9. http://dx.doi.org/10.26907/esd.17.1.01r.

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In addition to editing Education & Self Development I am on the reviewer panel for other journals in the field. I never begrudge the work involved in reviewing: it gives me insights into what other researchers are thinking, long before their work reaches the stage of being published. It also gives me a way of moderating the reviewing activities of E&SD so that we are matching the standards of other journals. This piece was prompted by a discussion between the authors and reviewers of an article submitted to one of these journals. It concerned the recency of the references and I recalle

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10

Stadler, Wolfgang, Tilo Brodbeck, Reinhold Gärtner, and Harald Gossner. "Do ESD fails in systems correlate with IC ESD robustness?" Microelectronics Reliability 49, no. 9-11 (2009): 1079–85. http://dx.doi.org/10.1016/j.microrel.2009.07.029.

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11

Yang, Sen, and David J. Pommerenke. "Effect of Different Load Impedances on ESD Generators and ESD Generator SPICE Models." IEEE Transactions on Electromagnetic Compatibility 60, no. 6 (2018): 1726–33. http://dx.doi.org/10.1109/temc.2017.2785739.

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12

Gołek, F. "ESD thresholds for KCl." physica status solidi (b) 239, no. 2 (2003): 336–39. http://dx.doi.org/10.1002/pssb.200301841.

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13

Berikkhanova, Aiman, Zhanar Ibraimova, and Magripa Ibrayeva. "Collaborative Learning Environment in the Professional Training of Future Teachers." Education and Self Development 17, no. 2 (2022): 144–56. http://dx.doi.org/10.26907/esd.17.2.13.

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The importance of this study is linked to the topic of increasing the quality of future teacher professional training by creating a collaborative learning environment. The purpose of this research is to conduct a theoretical analysis of the effectiveness of creating a collaborative learning environment in university and demonstrate its impact on the successful professional activity of future teachers. The paper presents the data of the experimental research in the form of Action Research, conducted among 1st and 2nd year students of pedagogical specialties in the natural sciences (chemistry, b

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14

Vashchenko, V. A., and P. Hopper. "Bipolar SCR ESD devices." Microelectronics Reliability 45, no. 3-4 (2005): 457–71. http://dx.doi.org/10.1016/j.microrel.2004.12.013.

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15

Verhaege, Koen. "Component level ESD testing." Microelectronics Reliability 38, no. 1 (1998): 115–28. http://dx.doi.org/10.1016/s0026-2714(97)00068-1.

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16

Colvin, J. "ESD failure analysis methodology." Microelectronics Reliability 38, no. 11 (1998): 1705–14. http://dx.doi.org/10.1016/s0026-2714(98)00173-5.

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17

Ohsawa, A., and N. Ichikawa. "ESD detection by transient earth voltage." Journal of Physics: Conference Series 418 (March 22, 2013): 012054. http://dx.doi.org/10.1088/1742-6596/418/1/012054.

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18

Smallwood, Jeremy. "ESD in industry - present and future." Journal of Physics: Conference Series 646 (October 26, 2015): 012018. http://dx.doi.org/10.1088/1742-6596/646/1/012018.

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19

Gajewski, A. "Multichannel measurement of ESD." Journal of Electrostatics 67, no. 2-3 (2009): 271–74. http://dx.doi.org/10.1016/j.elstat.2009.02.006.

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20

Rhoades, William T. "System ESD immunity design." Journal of Electrostatics 24, no. 2 (1990): 131–48. http://dx.doi.org/10.1016/0304-3886(90)90004-f.

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21

Kitagawa, Mitsuhiko, Ken-ichi Matsushita, and Akio Nakagawa. "High-Voltage Emitter Short Diode (ESD)." Japanese Journal of Applied Physics 35, Part 1, No. 12A (1996): 5998–6002. http://dx.doi.org/10.1143/jjap.35.5998.

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22

Ker, Ming-Dou, Tung-Yang Chen, and Chung-Yu Wu. "Substrate-triggered ESD clamp devices for use in power-rail ESD clamp circuits." Solid-State Electronics 46, no. 5 (2002): 721–34. http://dx.doi.org/10.1016/s0038-1101(01)00317-3.

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23

WU, E., and XIAO-AN ZHANG. "DYNAMICS OF PAIRWISE ENTANGLEMENT IN THE THREE-QUBIT HEISENBERG XX SPIN CHAIN." International Journal of Quantum Information 07, no. 08 (2009): 1447–58. http://dx.doi.org/10.1142/s0219749909005985.

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For a three-qubit Heisenberg XX spin chain with the uniform magnetic field and magnetic impurity, dynamic evolution of pairwise entanglement are studied. We show that the phenomenon of entanglement sudden death (ESD) occurs in the evolution of entanglement for some initial states. We also find that magnetic impurity cannot only eliminate the phenomenon of ESD but also induce the ESD effects, which is different from the case of uniform magnetic field where the ESD can be depressed but cannot be eliminated by introducing the uniform magnetic field.

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24

Vassilev, Vesselin, and Wolfgang Stadler. "Editorial ESD reliability special section." Microelectronics Reliability 49, no. 12 (2009): 1405–6. http://dx.doi.org/10.1016/j.microrel.2009.10.013.

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25

Gieser, Horst A. "On-chip electrostatic discharge ESD." Microelectronics Reliability 43, no. 7 (2003): 985–86. http://dx.doi.org/10.1016/s0026-2714(03)00122-7.

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26

SUWANNATA, NATTAWOOT, and APIRAT SIRITARATIWAT. "ELECTROSTATIC DISCHARGE EFFECTS ON GMR RECORDING HEADS USING A WAVELET TRANSFORM APPROACH." International Journal of Modern Physics B 23, no. 17 (2009): 3567–72. http://dx.doi.org/10.1142/s0217979209062980.

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Electrostatic Discharge (ESD) effects have been identified as one of the most dangerous causes of giant magnetoresistive (GMR) recording head damage. These phenomena have been studied at all levels of hard-disk drive manufacturing 1. The head gimbal assembly (HGA) is mainly studied because of its exposure to the environment. The standard models are typically based on the human body model (HBM), the machine model (MM) and the charged device model (CDM) where research and practical tests are incompatible. In production, one or more ESD models are normally effective while the other is undergone u

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27

Gorlov, M. I., V. A. Emel?yanov, I. I. Rubtsevich, and D. Yu Smirnov. "Parts screening for ESD susceptibility." Russian Microelectronics 34, no. 1 (2005): 22–29. http://dx.doi.org/10.1007/s11180-005-0003-x.

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28

Liang, Z., H. Zhang, S. Wang, et al. "Comparative research of electrospark deposited Tungsten alloy coating in two kinds of gas." Digest Journal of Nanomaterials and Biostructures 16, no. 3 (2021): 793–800. http://dx.doi.org/10.15251/djnb.2021.163.793.

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A W alloy was used as an electrode to prepare a coating on a CrNi3MoVA steel substrate by means of electrospark deposition (ESD) technique. The mass transfer coefficient (MTC) from the electrode to the substrate was calculated through measuring the mass change by employing an electronic balance in air and in argon, respectively, and the morphologies, composition and phase structure were analyzed by utilizing scanning electron microscopy (SEM), energy dispersive X-ray spectrum (EDS) and X-ray diffraction(XRD). The results showed that the ambient gas has an obvious influence on the surface morph

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29

Saragih, L., Riandi, and R. Solihat. "The implementation of ESD into Biology learning to equip students with ESD competencies of systemic thinking and problem-solving." Journal of Physics: Conference Series 1806, no. 1 (2021): 012158. http://dx.doi.org/10.1088/1742-6596/1806/1/012158.

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30

Zhou, Jianchi, Kaustav Ghosh, Shaojie Xiang, et al. "Characterization of ESD Risk for Wearable Devices." IEEE Transactions on Electromagnetic Compatibility 60, no. 5 (2018): 1313–21. http://dx.doi.org/10.1109/temc.2017.2780056.

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31

Jiang, yibo, Hui Bi, Zhihao Xu, Wei Zhao, Yuanyuan Zhang, and Xiaolei Wang. "Polysilicon devices as a highly compatible ESD protection with modulable voltage and low capacitance." International Journal of Modern Physics B 35, no. 04 (2021): 2150052. http://dx.doi.org/10.1142/s0217979221500521.

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The electronic circuits fabricated in a variety of technologies for different applications are all vulnerable to the electrostatic discharge (ESD) event. In this paper, polysilicon devices are investigated as ESD protection because of the noticeable advantages such as compatibility with several technologies, low parasitical capacitance, and little noise coupling. By forming the p-i-n diode in the polysilicon layer and stacking them together, the single polysilicon diode (SPD) and cascaded polysilicon diode (CasPD) are implemented in the 0.35 [Formula: see text] high voltage diffusion process.

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32

Chen, Shih-Hung, and Ming-Dou Ker. "Active ESD protection circuit design against charged-device-model ESD event in CMOS integrated circuits." Microelectronics Reliability 47, no. 9-11 (2007): 1502–5. http://dx.doi.org/10.1016/j.microrel.2007.07.095.

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33

Ker, Ming-Dou, Bing-Jye Kuo, and Yuan-Wen Hsiao. "Optimization of broadband RF performance and ESD robustness by -model distributed ESD protection scheme." Journal of Electrostatics 64, no. 2 (2006): 80–87. http://dx.doi.org/10.1016/j.elstat.2005.03.086.

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34

Lin, Changgui, Erik Kjellström, Renate Anna Irma Wilcke, and Deliang Chen. "Present and future European heat wave magnitudes: climatologies, trends, and their associated uncertainties in GCM-RCM model chains." Earth System Dynamics 13, no. 3 (2022): 1197–214. http://dx.doi.org/10.5194/esd-13-1197-2022.

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Abstract. This study investigates present and future European heat wave magnitudes, represented by the Heat Wave Magnitude Index-daily (HWMId), for regional climate models (RCMs) and the driving global climate models (GCMs) over Europe. A subset of the large EURO-CORDEX ensemble is employed to study sources of uncertainties related to the choice of GCMs, RCMs, and their combinations. We initially compare the evaluation runs of the RCMs driven by ERA-interim reanalysis to E-OBS (observation-based estimates), finding that the RCMs can capture most of the observed spatial and temporal features of

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35

Jiang, Yibo, Hui Bi, and Hui Li. "Low trigger voltage bulk FinFET silicon controlled rectifier in nanotechnology." Modern Physics Letters B 32, no. 34n36 (2018): 1840072. http://dx.doi.org/10.1142/s0217984918400729.

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The bulk fin field-effect transistor (FinFET) has been the primary semiconductor technology in nanotechnology. To protect low supply voltage circuits based on FinFET, trigger voltage [Formula: see text] of the silicon controlled rectifier (SCR) which acts as electrostatic discharge (ESD) protection device should be lowered further. In this paper, in order to lower the [Formula: see text] an extra implant technique is proposed to form bridging well low trigger voltage FinFET SCR (FinFET BRLVTSCR). The experiments demonstrate that the trigger voltage can be lowered effectively. Moreover, the TCA

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36

Hyvonen, Sami, Sopan Joshi, and Elyse Rosenbaum. "Comprehensive ESD protection for RF inputs." Microelectronics Reliability 45, no. 2 (2005): 245–54. http://dx.doi.org/10.1016/j.microrel.2004.05.012.

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37

Wolf, Heinrich, Horst Gieser, Detlef Bonfert, and Markus Hauser. "ESD Susceptibility of Submicron Air Gaps." Microelectronics Reliability 46, no. 9-11 (2006): 1587–90. http://dx.doi.org/10.1016/j.microrel.2006.07.039.

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38

Notermans, Guido, Olivier Quittard, Anco Heringa, et al. "ESD robust high-voltage active clamps." Microelectronics Reliability 49, no. 12 (2009): 1433–39. http://dx.doi.org/10.1016/j.microrel.2009.06.055.

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39

Vassilev, Vesselin. "Advances in ESD protection for ICs." Microelectronics Reliability 53, no. 2 (2013): 183. http://dx.doi.org/10.1016/j.microrel.2013.01.002.

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40

Jacob, P., and U. Thiemann. "New ESD challenges in RFID manufacturing." Microelectronics Reliability 76-77 (September 2017): 395–99. http://dx.doi.org/10.1016/j.microrel.2017.06.048.

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41

Jiang, Lingli, Hang Fan, Ming Qiao, Bo Zhang, and Zhaoji Li. "ESD characterization of a 190V LIGBT SOI ESD power clamp structure for plasma display panel applications." Microelectronics Reliability 53, no. 5 (2013): 687–93. http://dx.doi.org/10.1016/j.microrel.2013.02.002.

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42

Liu, Wei, Xiao-ming Ren, Rui-zhen Xie, et al. "Fabrication and performance of a nickel-chromium (NiCr) igniter integrated with TVS diode for ESD protection." AIP Advances 13, no. 3 (2023): 035207. http://dx.doi.org/10.1063/5.0137883.

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The NiCr igniter is a key element of MEMS-based electro-explosive device (mEED), while electrostatic discharge (ESD) may excite the igniter accidentally. To protect the NiCr igniter from damage by ESD, a novel NiCr igniter by integrating the igniter onto a TVS diode based substrate was designed and fabricated through semiconductor technology. The microscope photograph, resistivity, breakdown voltage, firing performance, and ESD protection ability were tested. The results show that the surface of the chip is smooth, the edges of key structures are clear, and there are no major scratches, cracks

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43

JUTONG, NUTTACHAI, APIRAT SIRITARATIWAT, DUANGPORN SOMPONGSE, and PORNCHAI RAKPONGSIRI. "ELECTROSTATIC DISCHARGE EFFECT ON TMR RECORDING HEAD: A FLEX ON SUSPENSION CAPACITANCE APPROACH." International Journal of Modern Physics B 23, no. 17 (2009): 3586–90. http://dx.doi.org/10.1142/s0217979209063018.

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Electrostatic discharge (ESD) effects on GMR recording heads have been reported as the major cause of head failure. Since the information density in hard-disk drives has dramatically increased, the GMR head will be no longer in use. The tunneling magnetoresistive (TMR) read heads are initially introduced for a 100 Gbit/in2 density or more. Though the failure mechanism of ESD in GMR recording heads has not been explicitly understood in detail, a study to protect from this effect has to be done. As the TMR head has been commercially started, the ESD effect must be considered. This is the first t

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44

Zhu, Zhihua, Zhaonian Yang, Xiaomei Fan, Yingtao Zhang, Juin Jei Liou, and Wenbing Fan. "Optimization of Tunnel Field-Effect Transistor-Based ESD Protection Network." Crystals 11, no. 2 (2021): 128. http://dx.doi.org/10.3390/cryst11020128.

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The tunnel field-effect transistor (TFET) is a potential candidate for replacing the reverse diode and providing a secondary path in a whole-chip electrostatic discharge (ESD) protection network. In this paper, the ESD characteristics of a traditional point TFET, a line TFET and a Ge-source TFET are investigated using technology computer-aided design (TCAD) simulations, and an improved TFET-based whole-chip ESD protection scheme is proposed. It is found that the Ge-source TFET has a lower trigger voltage and higher failure current compared to the traditional point and line TFETs. However, the

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45

Nikolenko, S. V., S. N. Khimukhin, and P. S. Gordienko. "Alumo Matrix Composite Materials for Electro Spark Deposition on Carbon Steel." Solid State Phenomena 316 (April 2021): 745–51. http://dx.doi.org/10.4028/www.scientific.net/ssp.316.745.

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The article presents the research results on the problem of the influence of the electric spark discharge parameters and electrode alloys, based on metal matrix materials, used for electro spark deposition (ESD) on the physicochemical and operational characteristics of the coating layer. Experimental dependences of the cathode weight gain, erosion resistance of the anode materials, mass transfer coefficient, wear resistance of the coating, and their mathematical expressions with a reliability criterion of at least R2> 0.9044, are obtained. It is established that, after steel 45 sample has b

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46

Kuznetsov, Vadim. "HBM, MM, and CBM ESD Ratings Correlation Hypothesis." IEEE Transactions on Electromagnetic Compatibility 60, no. 1 (2018): 107–14. http://dx.doi.org/10.1109/temc.2017.2700492.

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47

Gao, Y., O. B. Malyshev, R. Valizadeh, et al. "Effect of the film thickness on electron stimulated desorption yield from Ti-Zr-V coating." Journal of Instrumentation 17, no. 08 (2022): P08025. http://dx.doi.org/10.1088/1748-0221/17/08/p08025.

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Abstract With the benefits of evenly distributed pumping, low thermal outgassing rate and low photon-/electron-/ion stimulated desorption yields, non-evaporable getter (NEG) coating has been widely used in particle accelerators for many years. Our earlier work has demonstrated the different thickness of Ti-Zr-V coating in the range of 0.1–1 μm affects its pumping properties. In this study, the electron stimulated desorption (ESD) yields were studied for Ti-Zr-V coating deposited from a twisted target with its thickness less than 0.5 μm, while an uncoated sample was also measured as a reference

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48

Sadiek, Gehad, Wiam Al-Dress, Salwa Shaglel, and Hala Elhag. "Asymptotic Entanglement Sudden Death in Two Atoms with Dipole–Dipole and Ising Interactions Coupled to a Radiation Field at Non-Zero Detuning." Entropy 23, no. 5 (2021): 629. http://dx.doi.org/10.3390/e23050629.

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We investigate the time evolution and asymptotic behavior of a system of two two-level atoms (qubits) interacting off-resonance with a single mode radiation field. The two atoms are coupled to each other through dipole–dipole as well as Ising interactions. An exact analytic solution for the system dynamics that spans the entire phase space is provided. We focus on initial states that cause the system to evolve to entanglement sudden death (ESD) between the two atoms. We find that combining the Ising and dipole–dipole interactions is very powerful in controlling the entanglement dynamics and ES

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49

Ker, Ming-Dou, and Tang-Kui Tseng. "Active Electrostatic Discharge (ESD) Device for On-Chip ESD Protection in Sub-Quarter-Micron Complementary Metal-Oxide Semiconductor (CMOS) Process." Japanese Journal of Applied Physics 43, no. 1A/B (2003): L33—L35. http://dx.doi.org/10.1143/jjap.43.l33.

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50

Voldman, Steven H. "A review of latchup and electrostatic discharge (ESD) in BiCMOS RF silicon germanium technologies: Part I—ESD." Microelectronics Reliability 45, no. 2 (2005): 323–40. http://dx.doi.org/10.1016/j.microrel.2004.10.017.

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