Relevant bibliographies by topics / ESD physics

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  1. Journal articles

Academic literature on the topic 'ESD physics'

Author: Grafiati
Published: 6 September 2023

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Journal articles on the topic "ESD physics"

1

Jauhariyah, M. N. R., B. K. Prahani, K. Syahidi, U. A. Deta, N. A. Lestari, and E. Hariyono. "ESD for physics: how to infuse education for sustainable development (ESD) to the physics curricula?" Journal of Physics: Conference Series 1747, no. 1 (2021): 012032. http://dx.doi.org/10.1088/1742-6596/1747/1/012032.

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2

Krabbenborg, Benno, Reinier Beltman, Philip Wolbert, and Ton Mouthaan. "Physics of electro-thermal effects in ESD protection devices." Journal of Electrostatics 28, no. 3 (1992): 285–99. http://dx.doi.org/10.1016/0304-3886(92)90077-7.

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3

Alvarez, D., M. J. Abou-Khalil, C. Russ, et al. "Analysis of ESD failure mechanism in 65nm bulk CMOS ESD NMOSFETs with ESD implant." Microelectronics Reliability 46, no. 9-11 (2006): 1597–602. http://dx.doi.org/10.1016/j.microrel.2006.07.041.

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4

Paul, Milova, Christian Russ, B. Sampath Kumar, Harald Gossner, and Mayank Shrivastava. "Physics of Current Filamentation in ggNMOS Devices Under ESD Condition Revisited." IEEE Transactions on Electron Devices 65, no. 7 (2018): 2981–89. http://dx.doi.org/10.1109/ted.2018.2835831.

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5

Sinha, Dheeraj Kumar, and Amitabh Chatterjee. "SPICE level implementation of physics of filamentation in ESD protection devices." Microelectronics Reliability 79 (December 2017): 239–47. http://dx.doi.org/10.1016/j.microrel.2017.05.022.

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6

Xu, Ke, Xing Chen, and Zhenzhen Chen. "A Physics-based Transient Simulation and Modeling Method for Wide-frequency Electrical Overstress Including ESD." Applied Computational Electromagnetics Society 36, no. 5 (2021): 505–12. http://dx.doi.org/10.47037/2020.aces.j.360503.

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Circuits design that meets various IEC electrical overstress (EOS) standards is still a challenge, for that different kinds of EOS are at different frequency bands. In this paper, a physics-based transient simulation and modeling method is proposed, which can simulate wide-frequency EOS including electrostatic discharge (ESD) and AC characteristics. In this method, the physical model is used to characterize the nonlinear semiconductor devices in the finite-difference time-domain (FDTD)-SPICE co-simulation. Moreover, the modeling and physical parameters extraction method of the ESD protect devices, the transient voltage suppressor diode, is demonstrated. Taking an EOS protection circuit for example, it is modeled and simulated by the proposed method. Moreover, the circuit is also simulated by the widely-used System-Efficient ESD Design (SEED) method, in which the TVS diode is modeled based on 100 ns Transmission Line Pulse (TLP) measurements. The experiments show that both this method and SEED method can characterize the IEC system-level ESD behaviors well. However, the error of the SEED is about 219.2% at 10 MHz AC characteristics, but the maximum error of the proposed method is only 7.8%. Hence, compared with the widely-used SEED method, this method is more accurate when characterizing the EOS event during AC operation and switching.
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7

Liu, Xiao Yu, Jiang Shao, Xing Hao Wang, and Feng Ming Lu. "Research Progress on Electrostatic Discharge Failure Models in Semiconductor Materials." Advanced Materials Research 548 (July 2012): 527–31. http://dx.doi.org/10.4028/www.scientific.net/amr.548.527.

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Electrostatic discharge (ESD) is a single, fast, high current transfer of electrostatic charge between two objects at different electrostatic potentials, and it is one of the most important failure mechanisms in integrated circuits due to their complex operation condition. The modes, mechanism, and models of the ESD failure were discussed. Firstly failure modes of ESD were classified and the failure mechanisms were described. Then three failure models including Wunsch and Bell model, Speakman model and Tasca model were summarized. The differences of the assumption and application area of these models were discussed in detail later. At last, suggestions for future studying ESD physics of failure model were proposed.
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8

Rushby, Nick. "Editorial: Recent references." Education and Self Development 17, no. 1 (2022): 6–7. http://dx.doi.org/10.26907/esd.17.1.01.

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In addition to editing Education & Self Development I am on the reviewer panel for other journals in the field. I never begrudge the work involved in reviewing: it gives me insights into what other researchers are thinking, long before their work reaches the stage of being published. It also gives me a way of moderating the reviewing activities of E&SD so that we are matching the standards of other journals. This piece was prompted by a discussion between the authors and reviewers of an article submitted to one of these journals. It concerned the recency of the references and I recalled that on several occasions over the past few months, submissions to E&SD had been criticised because many of the references were ‘old’ – that is, published more than ten years ago. It is a simple matter to read through the list of references and count the number that are more than, say, ten years old, but that does not necessarily mean that they do not have value. In contrast to high energy particle physics, our field of education and psychology moves relatively slowly.
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Rushby, Nick. "Editorial: Recent references." Education and Self Development 17, no. 1 (2022): 8–9. http://dx.doi.org/10.26907/esd.17.1.01r.

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Abstract:
In addition to editing Education & Self Development I am on the reviewer panel for other journals in the field. I never begrudge the work involved in reviewing: it gives me insights into what other researchers are thinking, long before their work reaches the stage of being published. It also gives me a way of moderating the reviewing activities of E&SD so that we are matching the standards of other journals. This piece was prompted by a discussion between the authors and reviewers of an article submitted to one of these journals. It concerned the recency of the references and I recalled that on several occasions over the past few months, submissions to E&SD had been criticised because many of the references were ‘old’ – that is, published more than ten years ago. It is a simple matter to read through the list of references and count the number that are more than, say, ten years old, but that does not necessarily mean that they do not have value. In contrast to high energy particle physics, our field of education and psychology moves relatively slowly.
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10

Stadler, Wolfgang, Tilo Brodbeck, Reinhold Gärtner, and Harald Gossner. "Do ESD fails in systems correlate with IC ESD robustness?" Microelectronics Reliability 49, no. 9-11 (2009): 1079–85. http://dx.doi.org/10.1016/j.microrel.2009.07.029.

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