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Relevant bibliographies by topics / Esaki Tunneling

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Academic literature on the topic 'Esaki Tunneling'

Author: Grafiati

Published: 6 September 2023

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Journal articles on the topic "Esaki Tunneling"

1

Wang, Peng-Fei, Thomas Nirschl, Doris Schmitt-Landsiedel, and Walter Hansch. "Simulation of the Esaki-tunneling FET." Solid-State Electronics 47, no. 7 (July 2003): 1187–92. http://dx.doi.org/10.1016/s0038-1101(03)00045-5.

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2

Lee, Jun-Ho, Inchul Choi, Nae Bong Jeong, Minjeong Kim, Jaeho Yu, Sung Ho Jhang, and Hyun-Jong Chung. "Simulation of Figures of Merit for Barristor Based on Graphene/Insulator Junction." Nanomaterials 12, no. 17 (August 31, 2022): 3029. http://dx.doi.org/10.3390/nano12173029.

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We investigated the tunneling of graphene/insulator/metal heterojunctions by revising the Tsu–Esaki model of Fowler–Nordheim tunneling and direct tunneling current. Notably, the revised equations for both tunneling currents are proportional to V3, which originates from the linear dispersion of graphene. We developed a simulation tool by adopting revised tunneling equations using MATLAB. Thereafter, we optimized the device performance of the field-emission barristor by engineering the barrier height and thickness to improve the delay time, cut-off frequency, and power-delay product.

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3

Perraud, S., C. David, and Z. Z. Wang. "Nanomeasure of Esaki Negative Resistance on p-Type GaAs(110) Surfaces." Solid State Phenomena 121-123 (March 2007): 835–38. http://dx.doi.org/10.4028/www.scientific.net/ssp.121-123.835.

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At the (110) cleaved surfaces of p-type GaAs with degenerate doping level, the negative differential resistance (NDR) inside of the band gap was observed in scanning tunneling spectra (STS) measurement. The origin of the NDR was found to be the voltage dependence of the transmission coefficient through the double tunneling barrier, a phenomenon similar to that reported by Esaki and Stiles in planar metal-insulator-semiconductor tunnel junctions.

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4

Hansch, W., C. Fink, J. Schulze, and I. Eisele. "A vertical MOS-gated Esaki tunneling transistor in silicon." Thin Solid Films 369, no. 1-2 (July 2000): 387–89. http://dx.doi.org/10.1016/s0040-6090(00)00896-8.

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5

Bandara, K. M. S. V., and D. D. Coon. "Derivation and correction of the Tsu–Esaki tunneling current formula." Journal of Applied Physics 66, no. 2 (July 15, 1989): 693–96. http://dx.doi.org/10.1063/1.343539.

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6

Tuomisto, Noora, Sebastiaan van Dijken, and Martti Puska. "Tsu-Esaki modeling of tunneling currents in ferroelectric tunnel junctions." Journal of Applied Physics 122, no. 23 (December 21, 2017): 234301. http://dx.doi.org/10.1063/1.5001823.

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7

Bandara, K. M. S. V., and D. D. Coon. "Analytic techniques and corrections to the Tsu-Esaki tunneling current." Superlattices and Microstructures 4, no. 6 (January 1988): 697–700. http://dx.doi.org/10.1016/0749-6036(88)90197-8.

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8

Willatzen, Morten, and Zhong Lin Wang. "Contact Electrification by Quantum-Mechanical Tunneling." Research 2019 (August 4, 2019): 1–11. http://dx.doi.org/10.34133/2019/6528689.

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A simple model of charge transfer by loss-less quantum-mechanical tunneling between two solids is proposed. The model is applicable to electron transport and contact electrification between e.g. a metal and a dielectric solid. Based on a one-dimensional effective-mass Hamiltonian, the tunneling transmission coefficient of electrons through a barrier from one solid to another solid is calculated analytically. The transport rate (current) of electrons is found using the Tsu-Esaki equation and accounting for different Fermi functions of the two solids. We show that the tunneling dynamics is very sensitive to the vacuum potential versus the two solids conduction-band edges and the thickness of the vacuum gap. The relevant time constants for tunneling and contact electrification, relevant for triboelectricity, can vary over several orders of magnitude when the vacuum gap changes by one order of magnitude, say, 1 Å to 10 Å. Coulomb repulsion between electrons on the left and right material surfaces is accounted for in the tunneling dynamics.

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9

R. Celino, Daniel, Adelcio M de Souza, Caio Luiz Machado Pereira Plazas, Regiane Ragi, and Murilo A Romero. "Physics Based RTD Model Accounting for Space Charge and Phonon Scattering Effects." Journal of Integrated Circuits and Systems 17, no. 1 (April 30, 2022): 1–8. http://dx.doi.org/10.29292/jics.v17i1.545.

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This paper presents a fully analytical model for the current-voltage (I–V) characteristics of Resonant Tunneling Diodes. Based on Tsu-Esaki formalism, we consider the full electrical potential distribution in the structure, including the space charge regions at the emitter and collector layers. In addition, we account for the scattering suffered by carriers when tunneling through the double-barrier region, as a function of the applied bias voltage. These considerations improve the accuracy of the proposed model when compared with other approaches while keeping it physics based and fully analytical. Finally, the model is validated with experimental and numericaldata, demonstrating its feasibility for applications in circuit simulation environments.

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10

Bizindavyi, Jasper, Anne S. Verhulst, Quentin Smets, Devin Verreck, Bart Soree, and Guido Groeseneken. "Band-Tails Tunneling Resolving the Theory-Experiment Discrepancy in Esaki Diodes." IEEE Journal of the Electron Devices Society 6 (2018): 633–41. http://dx.doi.org/10.1109/jeds.2018.2834825.

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Book chapters on the topic "Esaki Tunneling"

1

Capasso, Federico, Fabio Beltram, Deborah L. Sivco, Albert L. Hutchinson, Sung-Nee G. Chu, and Alfred Y. Cho. "Transport in Superlattices: Observation of Negative Differential Conductance by Field Induced Localization and Its Equivalence with the Esaki-Tsu Mechanism; Scattering Controlled Resonances in Superlattices." In Resonant Tunneling in Semiconductors, 377–86. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3846-2_35.

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Conference papers on the topic "Esaki Tunneling"

1

Özbay, E., and D. M. Bloom. "Triggering with Subpicosecond Jitter Using Resonant Tunneling Diodes." In Picosecond Electronics and Optoelectronics. Washington, D.C.: Optica Publishing Group, 1991. http://dx.doi.org/10.1364/peo.1991.fb1.

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Resonant tunneling diodes (RTD's) with their superior high frequency characteristics, are attractive for high speed applications. As RTD's have terminal characteristics very similar to the Esaki Tunnel Diode, all current high speed applications of Esaki Tunnel Diode are good candidates for the use of new tunneling device. One such application is in high frequency trigger circuits.

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2

KOGA, Junji, and Akira TORIUMI. "Three-Terminal Silicon Esaki Tunneling Device." In 1996 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1996. http://dx.doi.org/10.7567/ssdm.1996.a-2-4.

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3

Shah, Jagdeep. "Ultrafast Optical Studies of Tunneling and Perpendicular Transport in Semiconductor Microstructures." In Quantum Wells for Optics and Opto-Electronics. Washington, D.C.: Optica Publishing Group, 1989. http://dx.doi.org/10.1364/qwoe.1989.wc1.

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Novel electronic properties of superlattices, double barrier diodes and other semiconductor microstructures have generated considerable current interest from fundamental as well as device points of views. One of the driving forces behind this interest is the possibility of novel high speed devices; e.g. Sollner et al [1] have shown very high frequency response for double barrier diodes. There are also a number of very interesting fundamental issues as proposed in the original work of Esaki and Tsu [2]. Some of this work has been recently reviewed by Esaki [3] and Capasso et al [4].

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4

Oberli, D. Y., J. Shah, T. C. Damen, C. W. Tu, and D. A. B. Miller. "Electron Tunneling Times in Coupled Quantum Wells." In Quantum Wells for Optics and Opto-Electronics. Washington, D.C.: Optica Publishing Group, 1989. http://dx.doi.org/10.1364/qwoe.1989.wd3.

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The work by Esaki and Tsu on tunneling in superlattices1 has generated a considerable interest for the potential application of tunneling to real devices. The rapid progress of epitaxial growth techniques has led to the creation of novel semiconductor structures which exhibit quantum-size effects and tunneling such as the double-barrier resonnant tunneling structures or the superlattice p-i-n diodes2. Transport studies in these structures demonstrated Bloch transport through the superlattice minibands3, negative differential resistance in double barrier diodes4, field induced localization5. More recently, optical measurements have been performed in double barrier structures in order to gain some insight on space-charge buildup6 and escape rates7.

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5

Cahay, Marc M., T. Dichiaro, P. Thanikasalam, and Ramasubraman Venkatasubramanian. "Quantum-mechanical tunneling time and its relation to the Tsu-Esaki formula." In Semiconductors '92, edited by Gottfried H. Doehler and Emil S. Koteles. SPIE, 1992. http://dx.doi.org/10.1117/12.137589.

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6

Bizindavyi, Jasper, Anne S. Verhulst, Quentin Smets, Devin Verreck, Nadine Collaert, Anda Mocuta, Bart Soree, and Guido Groeseneken. "Calibration of the high-doping induced ballistic band-tails tunneling current with In0.53Ga0.47As Esaki diodes." In 2017 Fifth Berkeley Symposium on Energy Efficient Electronic Systems & Steep Transistors Workshop (E3S). IEEE, 2017. http://dx.doi.org/10.1109/e3s.2017.8246161.

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7

Moraru, D., H. N. Tan, L. T. Anh, M. Manoharan, T. Mizuno, R. Nuryadi, H. Mizuta, and M. Tabe. "Enhancement of inter-band tunneling due to low-dimensionality of lateral 2D Silicon Esaki diodes." In 2016 IEEE Silicon Nanoelectronics Workshop (SNW). IEEE, 2016. http://dx.doi.org/10.1109/snw.2016.7577965.

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8

Liu, C. Y., P. Y. Chiu, Y. Chuang, and J. Y. Li. "Indirect-to-Direct Bandgap Transition of GeSn by Phonon-assisted Tunneling Spectra in Esaki Diodes." In 2019 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2019. http://dx.doi.org/10.7567/ssdm.2019.ps-9-11.

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9

Prabhudesai, G., K. Yamaguchi, M. Tabe, and D. Moraru. "Coulomb-Blockade Charge-Transport Mechanism in Band-to-Band Tunneling in Heavily-Doped Low-Dimensional Silicon Esaki Diodes." In 2020 IEEE Silicon Nanoelectronics Workshop (SNW). IEEE, 2020. http://dx.doi.org/10.1109/snw50361.2020.9131628.

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