Dissertations / Theses on the topic 'Erbium'
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Goldner, Philippe. "Processus de paires dans une perovskite hexagonale : luminescence anti-stokes dans les systemes erbium-erbium et erbium-ytterbium." Paris 6, 1993. http://www.theses.fr/1993PA066376.
Full textGloag, Andrew John. "Tunable erbium doped fibre lasers." Thesis, University of Strathclyde, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.249838.
Full textGraydon, Oliver. "Advanced erbium-doped fibre devices." Thesis, University of Southampton, 1996. https://eprints.soton.ac.uk/396447/.
Full textChiossi, Federico. "Superfluorescence from Erbium-doped crystals." Doctoral thesis, Università degli studi di Padova, 2019. http://hdl.handle.net/11577/3425779.
Full textRuhge, Forrest. "EFFECT OF GERMANIUM DOPING ON ERBIUM SENSITIZATION IN THE ERBIUM DOPED SILICON RICH SILICA MATERIAL SYSTEM." Master's thesis, University of Central Florida, 2006. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/2933.
Full textM.S.
Other
Optics and Photonics
Optics
Siddiqui, Saiful Anam. "Erbium doped silicon light emitting diodes." Thesis, University of Surrey, 2003. http://epubs.surrey.ac.uk/843408/.
Full textCampbell, Maya. "Energy transfer processes in erbium elpasolites." Thesis, Birkbeck (University of London), 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.265854.
Full textPurnawirman. "Integrated erbium lasers in silicon photonics." Thesis, Massachusetts Institute of Technology, 2017. http://hdl.handle.net/1721.1/108994.
Full textCataloged from PDF version of thesis.
Includes bibliographical references (pages 109-114).
We present results on the development of integrated erbium-doped aluminum oxide lasers on a silicon photonics platform. A key achievement in this work is a scalable laser design for high output power and ultra-narrow linewidth performance. Using a novel wavelength-insensitive design, a CMOS compatible waveguide structure is proposed to achieve high confinement factor and intensity overlap for both the pump (980 nm) and signal (1550 nm) wavelengths. Laser operation in the C- and L- bands of the erbium gain spectrum is obtained with both a distributed Bragg reflector and a distributed feedback structure. We demonstrate power scaling with output power greater than 75 mW and obtain an ultra-narrow linewidth of 5.3 t 0.3 kHz. We investigate the influence of gain film thickness uniformity in distributed feedback laser performance and show a compensation scheme based on a curved cavity design. We then consider the application in optical communications by demonstrating a multiwavelength cascaded laser to generate wavelength division multiplexing (WDM) light sources. Finally, we propose an integration scheme of laser in full silicon photonics platform by using an erbium trench. The approach is alignment free and allows the erbium-doped film deposition to be the last backend process, providing a pathway to a scalable CMOS compatible laser device.
by Purnawirman.
Ph. D.
Cowle, Gregory John. "Narrow-linewidth erbium-doped fibre lasers." Thesis, University of Southampton, 1991. https://eprints.soton.ac.uk/399361/.
Full textGengelbach, Aila. "Collectivity in Neutron-Rich Erbium Isotopes." Licentiate thesis, Uppsala universitet, Kärnfysik, 2021. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-442208.
Full textMONTEVILLE, ACHILLE. "Materiaux vitroceramiques fluores transparents dopes erbium." Rennes 1, 2000. http://www.theses.fr/2000REN10007.
Full textHwang, Bor-Chyuan. "Short erbium doped phosphate fiber amplifiers." Diss., The University of Arizona, 2000. http://hdl.handle.net/10150/289174.
Full textBANERJEE, SIDDHARTHA. "OPTICAL PROPERTIES AND POPULATION STATISTICS OF ERBIUM IN OPTICALLY-PUMPED ERBIUM-DOPED ZINC SILICATE GERMANATE WAVEGUIDE AMPLIFIERS." University of Cincinnati / OhioLINK, 2004. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1100892919.
Full textBanerjee, Siddhartha. "Optical properties and population statistics of erbium in optically pumped erbium doped zinc silicate germanate (ZSG) waveguide amplifiers." Cincinnati, Ohio : University of Cincinnati, 2004. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=ucin1100892919.
Full textJones, Mark Alexander Goddard. "Luminescent erbium metallofullerenes for quantum information processing." Thesis, University of Oxford, 2006. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.437365.
Full textMcMillan, Duncan. "Spectrum engineering in erbium doped fibre devices." Thesis, University of Strathclyde, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.273815.
Full textMorkel, Paul Roos. "Active neodymium and erbium doped fibre devices." Thesis, University of Southampton, 1990. https://eprints.soton.ac.uk/399485/.
Full textGARTER, MICHAEL JAMES. "ELECTROLUMINESCENT DEVICES FABRICATED ON ERBIUM DOPED GaN." University of Cincinnati / OhioLINK, 2001. http://rave.ohiolink.edu/etdc/view?acc_num=ucin990545888.
Full textStoita, Ana Doina. "Piégeage radiatif dans des matériaux dopés erbium." Lyon 1, 2006. http://www.theses.fr/2006LYO10076.
Full textBreguet, Jacques. "Q-switching of 3 *m Erbium lasers /." [S.l.] : [s.n.], 1991. http://www.ub.unibe.ch/content/bibliotheken_sammlungen/sondersammlungen/dissen_bestellformular/index_ger.html.
Full textDegliame, Gary. "Thermométrie par photoluminescence, application en micro/nanothermique." Thesis, Reims, 2017. http://www.theses.fr/2017REIMS021/document.
Full textThis PhD work focuses on the study of microcrystals photoluminescence in order to design a hybrid probe allowing micro/nano-scales measurements of a sample’s temperature and the thermal conductivity. Thus, a Wollaston thermoresistive probe used in thermal microscopy (SThM), was coupled to an Erbium doped microcrystal of Cd0.7Sr0.3F2 (4% Er3+), whose emission spectrum is sensitive to the temperature.At first, for its applications in thermometry, the optical properties of the bulk crystal have been studied. We worked on the interpretation of its luminescence spectrum obtained by up-conversion using a laser diode centered at 655 nm and 4mW. Then, we proposed three methods to determine the fluorescence intensities to access this temperature via the RIF (Fluorescence Intensity Ratio) technique. We have shown that it is possible to determine its temperature using the Stark sub-levels of the thermalized levels emissions intensities.Furthermore, we studied the temperature behavior of the microcrystals individually fixed at the end of thermoresistive probes. The experimental results made it possible to deduce the optimal size of the microcrystal and the most adapted intensity determination method for nano/microthermometry.After validating our microcrystal temperature approach, we focused on the principle of temperature imaging from photoluminescence spectra. We present an application on a microsystem composed of wires with a diameter of 350nm covered by a SiO2 thin film
Meshkinfam, Peyman. "Erbium-ytterbium co-dopped ion-exchanged waveguide amplifiers." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk2/tape17/PQDD_0029/MQ38696.pdf.
Full textThảo. "Photoluminescence spectroscopy on erbium-doped and porous silicon." Amsterdam : Amsterdam : [s.n.] ; Universiteit van Amsterdam [Host], 2000. http://dare.uva.nl/document/83659.
Full textVanWiggeren, Gregory D. "Chaotic communication with erbium-doped fiber ring lasers." Diss., Georgia Institute of Technology, 2000. http://hdl.handle.net/1853/30299.
Full textRen, Yong-Gang Frank. "Erbium doped silicon as an optoelectronic semiconductor material." Thesis, Massachusetts Institute of Technology, 1994. http://hdl.handle.net/1721.1/36468.
Full textTamura, Kohichi Robert. "Additive pulse mode-locked erbium-doped fiber lasers." Thesis, Massachusetts Institute of Technology, 1994. http://hdl.handle.net/1721.1/11851.
Full textIncludes bibliographical references (leaves 155-168).
by Kohichi Robert Tamura.
Ph.D.
Ye, Chen Chun. "Spectroscopy of erbium-doped fibre amplifiers and lasers." Thesis, University of Southampton, 1995. https://eprints.soton.ac.uk/399077/.
Full textPeng, Xiang. "Erbium-doped tellurite glass microsphere amplifiers and lasers." Diss., The University of Arizona, 2004. http://hdl.handle.net/10150/280529.
Full textPrtljaga, Nikola. "Silicon nanocrystals: from bio-imager to erbium sensitizer." Doctoral thesis, Università degli studi di Trento, 2012. https://hdl.handle.net/11572/368704.
Full textPrtljaga, Nikola. "Silicon nanocrystals: from bio-imager to erbium sensitizer." Doctoral thesis, University of Trento, 2012. http://eprints-phd.biblio.unitn.it/715/1/Silicon_nanocrystals_from_bio-imager_to_Er3%2B_sensitizer.pdf.
Full textSilva, Reginaldo da. "Avaliação experimental das caracteristicas de ampliação de fibras de vidro telurito dopado com erbio." [s.n.], 2008. http://repositorio.unicamp.br/jspui/handle/REPOSIP/261917.
Full textDissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica e de Computação
Made available in DSpace on 2018-08-12T12:54:47Z (GMT). No. of bitstreams: 1 Silva_Reginaldoda_M.pdf: 5147387 bytes, checksum: 92c87077ec69edec6939f972e198910e (MD5) Previous issue date: 2008
Resumo: Com o atual e constante crescimento das taxas de transmissões em comunicações ópticas, a busca por novos materiais com aplicações em amplificadores ópticos tem servido de fonte de constantes pesquisas. Motivado por essa necessidade, este trabalho apresenta os resultados alcançados para uma análise experimental das características de amplificação de fibras ópticas feitas com vidro telurito dopado com érbio e sem a utilização do túlio (Tm) como co-dopante, produzidas no IFGW/ UNICAMP. Os procedimentos adotados para as medições de dois tipos de fibra (perfil de índice degrau e microestruturada) são descritos para diferentes configurações de aplicação de bombeio. Quando comparadas às fibras de sílica dopadas com érbio, estas fibras apresentaram banda disponível para amplificação, aproximadamente, duas vezes mais ampla (~90 nm). Medindo-se as variações no nível de potência óptica de um sinal antes e depois da aplicação de bombeio, pode-se alcançar um aumento de potência de saída de até 15 dB, sugerindo propriedades de amplificação óptica, no entanto não se obteve ganho real no sistema. Este valor máximo foi obtido para amostras de 10 cm e 5 cm de fibra de perfil de índice degrau e microestruturada, respectivamente. A fragilidade da fibra dificultou o seu manuseio e impossibilitou sua conectorização, de maneira que os resultados alcançados podem, potencialmente, ser melhorados se as grandes perdas no processo de acoplamento da luz entre os diferentes materiais vítreos forem minimizadas.
Abstract: The continuous growth of the optical communication transmission rate has stimulated the search for new materials that can be applied to the manufacturing of optical amplifiers. Motivated by this, the results for an experimental analysis of the amplification characteristics of erbium doped tellurite fibers (EDTFs) without thulium co-doping are presented. The measurement procedures for two distinct fiber structures (step index and microstructured) fabricated at the IFGW/UNICAMP labs were described for different pump coupling configurations. In comparison with erbium-doped silica fibers, the EDTF shows an available optical amplification bandwidth twice as broader (~90 nm). By measuring the optical power variations of a signal before and after pumping application, an optical output power increase as high as 15dB was possible, suggesting optical amplification properties. This maximum value was achieved for 10-cm long step index fiber and 5-cm long microstructured fiber samples. The fiber sample mechanical fragility has made difficult its manipulation and prevented its connectorization in such a way that improvement in the measured results could be attained if the high losses during light coupling among different glass materials were minimized.
Mestrado
Telecomunicações e Telemática
Mestre em Engenharia Elétrica
Strümpel, Claudia. "Application of erbium-doped up-converters to silicon solar cells." Konstanz Hartung-Gorre, 2007. http://d-nb.info/988193930/04.
Full textPENNA, STEFANO. "Design processing and characterization of organic devices for optical communications." Doctoral thesis, Università degli Studi di Roma "Tor Vergata", 2009. http://hdl.handle.net/2108/991.
Full textThe recent explosion of broadband services and the limits imposed by the Moore’s law have stimulated strong research activities towards the integrated optical chips, that are composed of a platform on which many different optical functions, typically in the C-band, are implemented. Such devices are particularly challenging because integration and compactness play fundamental roles. Among the different materials used to process the optical integrated devices, three main classes can be identified: semiconductors, glasses and organic materials. The last ones are particularly attractive because of the low cost of processing and the high integration related to the amorphous structure, resulting in not required lattice matching conditions. A common design approach in integrated optics is to optimize a particular optical function with a specific material, then to integrate it on the platform. Among the functions to be implemented, amplification and light generation are still limited with respect to the other functions such as modulation or coupling/splitting. This is due to the limits imposed by erbium for the C-band operation. Indeed, erbium is difficult to be optically excited because of the small absorption cross section, so host sensitizers such as glasses are needed to efficiently collect the outer excitation and transfer it to the erbium ions. The most famous example of erbium sensitizer scheme is provided by the Erbium Doped Fiber Amplifiers (EDFAs), wherein erbium ions are incorporated in glass matrices. However, EDFAs are not suitable for integrated chips since a long interaction length is required to achieve a sufficient gain level. Erbium-doped organic compounds are promising erbium sensitizers for the application to integrated chips as they exhibit attractive features such as high absorption and emission cross section, semiconducting behavior and low cost processing. The aim of this work is to provide a demonstration of the potential of Er-doped compounds for the processing of an electrically driven integrated laser amplifier for the C-band of the optical communications. The different issues involved in such a challenging device have been studied separately, emphasizing the use of low cost techniques such as solution processing for organic deposition and LED pumping for the excitation of the active compounds. The opportunity for electrical pumping has been demonstrated with the processing of a spin-coated Er-doped organic LED. The optically pumped DFB cavities have been fabricated by nano-imprinting lithography and laser interference lithography and coated by Er-doped organic compound as active layer, resulting in a narrow emission line centered at 1530 nm. Finally, the waveguide issue has been addressed by designing a channel waveguide. Planar index discontinuity has been achieved by mean of a UV photo-patterning technique, purposed for the erbium-doped compound used in this work.
Reza, Selim. "Acoustooptically tunable waveguide lasers in erbium doped lithium niobate." [S.l.] : [s.n.], 2006. http://ubdata.uni-paderborn.de/ediss/06/2006/reza.
Full textAl, Choueiry Antoine. "NANOPARTICULES DE SILICIUM ET IONS ERBIUM POUR L'AMPLIFICATION OPTIQUE." Phd thesis, Université Claude Bernard - Lyon I, 2007. http://tel.archives-ouvertes.fr/tel-00333585.
Full textPlusieurs études ont été effectuées sur des couches minces de silice codopée par des Np-Si et des ions Er3+, mais plusieurs questions restent sans réponses. Par exemple, les mécanismes d'excitation et de désexcitation des ions Er3+, le faible pourcentage des ions Er3+ excités et l'environnement local des ions Er3+.
Nous avons utilisé une technique d'affinement de raie de fluorescence pour étudier l'environnement local des ions Er3+. Nous avons quantifié la largeur inhomogène de la transition 4I13/2--> 4I15/2 des ions Er3+ dans des couches minces de silice dopées par des Np-Si. Nous avons mis en évidence la présence d'un seul type de site. Une étude de la dynamique du niveau 4I13/2 nous a permis de proposer l'existence du phénomène de migration d'énergie entre les ions Er3+. Nous n'avons pas observé l'existence d'un transfert retour entre les ions Er3+ et les Np-Si. De plus, nous avons remarqué la présence d'une émission rapide (nanoseconde) dans le domaine de l'infrarouge. Nous avons attribué cette émission aux défauts liés aux Np-Si.
Curry, Richard James. "Luminescence characterisation of aluminium and erbium tris (8-hydroxyquinoline)." Thesis, Queen Mary, University of London, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.312173.
Full textO, Cochlain Ciaran R. "Tunable erbium doped fibre lasers for lightwave communication systems." Thesis, University of Cambridge, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.283935.
Full textGupta, Rita 1970. "Defect characterization of erbium doped silicon light emitting diodes." Thesis, Massachusetts Institute of Technology, 1994. http://hdl.handle.net/1721.1/11695.
Full textAli, Muhammad Irshad. "Sol-gel routes to erbium doped waveguide amplifiers (EDWAs)." Thesis, University of Edinburgh, 2009. http://hdl.handle.net/1842/11098.
Full textLim, Ee Leong. "Pump conditioning and optimisation for erbium doped fibre applications." Thesis, University of Southampton, 2012. https://eprints.soton.ac.uk/350230/.
Full textLynch, Jonathan William. "Laser (Cooling) Refrigeration in Erbium Based Solid State Materials." Diss., Temple University Libraries, 2015. http://cdm16002.contentdm.oclc.org/cdm/ref/collection/p245801coll10/id/358684.
Full textPh.D.
The objective of this study was to investigate the potential of erbium based solid state materials for laser refrigeration in bulk material. A great deal of work in the field has been focused on the use of ytterbium based ZBLAN glass. Some experiments have also reported cooling in thulium based solid state materials but with considerably less success. We proposed that erbium had many attractive features compared to ytterbium and therefore should be tried for cooling. The low lying energy level structure of erbium provides energy levels that could bring obtainable temperatures two orders of magnitude lower. Erbium transitions of interest for cooling fall in the near IR region (0.87 microns and 1.5 microns). Lasers for one of these transitions, in the 1.5 micron region, are well developed for communication and are in the eye-safe and water and atmosphere transparent region. Theoretical calculations are also presented so as to identify energy levels of the eleven 4f electrons in Er3+ in Cs2NaYCl6:Er3+ and the transitions between them. The strengths of the optical transitions between them have been calculated. Knowledge of such energy levels and the strength of the laser induced transitions between them is crucial for understanding the refrigeration mechanisms and different energy transfer pathways following the laser irradiation. The crystal host for erbium was a hexa-chloro-elpasolite crystal, Cs2NaYCl6:Er3+ with an 80% (stoichiometric) concentration of erbium. The best cooling results were obtained using the 0.87 micron transition. We have demonstrated bulk cooling in this crystal with a temperature difference of ~6.2 K below the surrounding temperature. The temperatures of the crystal and its immediate surrounding environment were measured using differential thermometry. Refrigeration experiments using the 1.5 micron transition were performed and the results are presented. The demonstrated temperature difference was orders of magnitude smaller. Only a temperature of ~0.015 K below the temperature of the surrounding environment was observed in this case. These results are in agreement with another group’s that has observed cooling, though a slightly poorer temperature difference, using this transition of erbium (Condon et. al., 2009). Cooling was also attempted in the 0.87 micron transition of another crystal host, KPb2Cl5:Er, which has a concentration of about one percent of erbium. We did not observe any cooling in this crystal. However, the first cooling reports in erbium based systems were with this crystal where another group observed cooling by 0.7 K using the same transition (Fernández, García-Adeva, & Balda, 2006).
Temple University--Theses
Cheney, Glenn P. (Glenn Peter) Carleton University Dissertation Engineering Electrical. "All-optical gain switching of erbium-doped fibre amplifiers." Ottawa, 1992.
Find full textHu, Yongdan. "High-concentration erbium-doped glasses, fiber amplifiers and lasers." Diss., The University of Arizona, 2001. http://hdl.handle.net/10150/279804.
Full textShah, M. "Excitation mechanisms in erbium-doped silicon-rich silicon oxide." Thesis, University College London (University of London), 2014. http://discovery.ucl.ac.uk/1420212/.
Full textWilkins, James. "THE SYNTHESIS, CHARACTERIZATION, AND UPCONVERTING PROPERTIES OF ERBIUM DOPED; YTTERBIUM, ERBIUM CO-DOPED YTTRIUM OXYSULFIDE PHOSPHORS UNDER 808, 980, AND 1560 nm EXCITATION." VCU Scholars Compass, 2011. http://scholarscompass.vcu.edu/etd/221.
Full textYe, Huanqing. "Organo-sensitised erbium system for optical amplification at telecommunication wavelength." Thesis, Queen Mary, University of London, 2014. http://qmro.qmul.ac.uk/xmlui/handle/123456789/9079.
Full textErnst, Holger. "Optimierung und Anwendung eines diodengepumpten, hochrepetierenden 3mm-Er:YAG-Lasers [3-my-m-Er:YAG-Lasers]." [S.l. : s.n.], 2004. http://deposit.ddb.de/cgi-bin/dokserv?idn=972358870.
Full textHoffman, Mark Brandon. "Sub-picosecond pulse propagation in an erbium-doped fiber amplifier with ion-induced dispersion." Diss., Georgia Institute of Technology, 1997. http://hdl.handle.net/1853/14961.
Full textSaintenoy, Stéphanie. "Structures atomiques et électroniques de volume et de surface de couches très minces de siliciures d'erbium épitaxiées sur Si(111)." Mulhouse, 1995. http://www.theses.fr/1995MULH0414.
Full textGueorguiev, Evguenii. "Conception et réalisation d'amplificateurs de forte puissance à base de fibre dopée Erbium et Erbium-Ytterbium double gaine fonctionnant en régimes continu et impulsionnel." Paris, ENST, 2009. http://www.theses.fr/2009ENST0068.
Full textThe average power of fiber amplifiers for applications in the transmission lines on optical networks is increasing in recent years. On the other hand, the sources based on doped optical fiber operating in pulse mode have recently experienced a dramatic development. Major research efforts have been made in this area in order to use these sources for military, aerospace and medical applications. The introduction of double clad fiber in the optical amplifier design has allowed obtaining very high power, impossible to imagine a few years ago. The purpose of my work was the development and implementation of WDM amplifiers in the C-band operating under continuous emission and optical sources operating in pulsed mode of a few nanoseconds at 1,55 µm based on double clad fibers. During my PhD, I was working fairly widely on optical amplification using doped fbers in various operating modes. I have showed that obtaining significant power may be limited by the occurence of side effects. My study has been so strongly guided by the goal of resolution or minimization of the consequences induced by the appearance of these effects and increases their threshold level. My work has allowed the development and commercialization of a family of WDM amplifiers and a family of sources with high brightness and high energy at 1,55 µm. I have thus optimized and built these devices from commercially available components