Journal articles: 'Epitaxial Devices'

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Metzner, H., Th Hahn, Chr Schmiga, J. H. Bremer, D. Borchert, W. R. Fahrner, and M. Seibt. "Epitaxial heterojunction devices." Solar Energy Materials and Solar Cells 49, no. 1-4 (December 1997): 337–42. http://dx.doi.org/10.1016/s0927-0248(97)00074-3.

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Baierhofer, Daniel, Bernd Thomas, F. Staiger, B. Marchetti, C. Förster, and Tobias Erlbacher. "Correlation of Extended Defects with Electrical Yield of SiC MOSFET Devices." Defect and Diffusion Forum 426 (June 6, 2023): 11–16. http://dx.doi.org/10.4028/p-i82158.

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The quality of the silicon carbide (SiC) epitaxial layer, i.e., layer homogeneities and extended defect densities, is of highest importance for high power 4H-SiC trench metal-oxide-semiconductor field effect transistors (Trench-MOSFET) devices. Especially, yield for devices with a large chip area is severely impacted by extended defects. Previously, devices had to be fully manufactured to effectively gauge the impact of a reduction in extended defect densities in the epitaxial layers on device yield. The production of devices such as Trench-MOSFETs is an extensive procedure. Therefore, a correlation between extended defects in the epitaxial layer and electrical device failure would allow to reliably estimate the impact of process changes during epitaxial layer deposition on electrical device yield.For this reason, n-type epitaxial layers were grown on around 1,000 commercially available 150 mm 4H-SiC Si-face substrates, which received a chemical wet cleaning prior to the epitaxy deposition. Substrates with lowest micro-pipe density from two different suppliers were used. The wafers were characterized with the corresponding device layout for defects utilizing surface microscopy as well as ultraviolet photoluminescence techniques. Subsequently, these wafers were used to produce more than 500,000 Trench-MOSFET devices. All devices have been tested on wafer level for their initial electrical integrity.With these methods a precise correlation between extended defects in the epitaxial layer and electrical failures on wafer level could be found. The influence of different substrates on the defect-based yield prediction regarding the electrical yield on wafer level is discussed. Additionally, a calculated kill-ratio is presented and the severity of defect classes on initial device failure, e.g., stacking faults, and their key failures modes are discussed.

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Sambri, A., D. Isarakorn, A. Torres-Pardo, S. Gariglio, Pattanaphong Janphuang, D. Briand, O. Stéphan, et al. "Epitaxial Piezoelectric Pb(Zr0.2Ti0.8)O3 Thin Films on Silicon for Energy Harvesting Devices." Smart Materials Research 2012 (April 22, 2012): 1–7. http://dx.doi.org/10.1155/2012/426048.

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We report on the properties of ferroelectric Pb(Zr0.2Ti0.8)O3 (PZT) thin films grown epitaxially on (001) silicon and on the performance of such heterostructures for microfabricated piezoelectric energy harvesters. In the first part of the paper, we investigate the epitaxial stacks through transmission electron microscopy and piezoelectric force microscopy studies to characterize in detail their crystalline structure. In the second part of the paper, we present the electrical characteristics of piezoelectric cantilevers based on these epitaxial PZT films. The performance of such cantilevers as vibration energy transducers is compared with other piezoelectric harvesters and indicates the potential of the epitaxial approach in the field of energy harvesting devices.

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Feng, Qi, Wenqi Wei, Bin Zhang, Hailing Wang, Jianhuan Wang, Hui Cong, Ting Wang, and Jianjun Zhang. "O-Band and C/L-Band III-V Quantum Dot Lasers Monolithically Grown on Ge and Si Substrate." Applied Sciences 9, no. 3 (January 23, 2019): 385. http://dx.doi.org/10.3390/app9030385.

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Direct epitaxial growth of III-V heterostructure on CMOS-compatible silicon wafer offers substantial manufacturing cost and scalability advantages. Quantum dot (QD) devices are less sensitive to defect and temperature, which makes epitaxially grown III-V QD lasers on Si one of the most promising technologies for achieving low-cost, scalable integration with silicon photonics. The major challenges are that heteroepitaxial growth of III-V materials on Si normally encounters high densities of mismatch dislocations, antiphase boundaries and thermal cracks, which limit the device performance and lifetime. This paper reviews some of the recent developments on hybrid InAs/GaAs QD growth on Ge substrates and highly uniform (111)-faceted hollow Si (001) substrates by molecular beam epitaxy (MBE). By implementing step-graded epitaxial growth techniques, the emission wavelength can be tuned into either an O band or C/L band. Furthermore, microcavity QD laser devices are fabricated and characterized. The epitaxially grown III-V/IV hybrid platform paves the way to provide a promising approach for future on-chip silicon photonic integration.

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Radhakrishnan, Rahul, Tony Witt, Seungchul Lee, and Richard Woodin. "Design of Silicon Carbide Devices to Minimize the Impact of Variation of Epitaxial Parameters." Materials Science Forum 858 (May 2016): 177–80. http://dx.doi.org/10.4028/www.scientific.net/msf.858.177.

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Optimized design of Silicon Carbide (SiC) power devices depends, besides power device physics, also on consideration of basic properties and technological readiness of the material. This paper presents a novel analysis of the dependence of variation of epitaxial doping and thickness on the determination of the optimum design point of SiC devices. We introduce electric field at epitaxy-substrate interface as a useful parameter in controlling the dependence of device parameters on epitaxy. Using this method as criterion for design can improve the robustness of SiC devices to epitaxial variation and hence the process yield.

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Vaz, C. A. F., Y. J. Shin, M. Bibes, K. M. Rabe, F. J. Walker, and C. H. Ahn. "Epitaxial ferroelectric interfacial devices." Applied Physics Reviews 8, no. 4 (December 2021): 041308. http://dx.doi.org/10.1063/5.0060218.

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Waldmann, Daniel, Johannes Jobst, Florian Speck, Thomas Seyller, Michael Krieger, and Heiko B. Weber. "Gated Epitaxial Graphene Devices." Materials Science Forum 717-720 (May 2012): 675–78. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.675.

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A bottom gate scheme is presented to tune the charge density of epitaxial graphene via a gate voltage while leaving the surface open for further manipulation or investigation. Depending on the doping concentration of the buried gate layer, the temperature and illumination, the bottom gate structure can be operated in two regimes with distinct capacitances. A model is proposed, which quantitatively describes the gate operation. The model is verified by a control experiment with an illuminated gate structure using UV light. Using UV illumination the Schottky capacitor (SC) regime, which provides improved gate efficiency, can be used even at low temperatures.

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Jokerst, N. M. "Integrated Optoelectronics Using Thin Film Epitaxial Liftoff Materials and Devices." Journal of Nonlinear Optical Physics & Materials 06, no. 01 (March 1997): 19–48. http://dx.doi.org/10.1142/s0218863597000034.

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The separation of single crystal thin film epitaxial compound semiconductor layers from a lattice matched growth substrate through selective etching, with subsequent bonding of the epitaxial thin film devices onto host substrates, is an emerging tool for multi-material, hybrid integration. Progress to date in this area, presented herein, includes advanced thin film devices, thin film material separation and device integration processing techniques, and thin film material and device integration with host substrates which include silicon circuitry, polymers, glass, and lithium niobate.

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First, Phillip N., Walt A. de Heer, Thomas Seyller, Claire Berger, Joseph A. Stroscio, and Jeong-Sun Moon. "Epitaxial Graphenes on Silicon Carbide." MRS Bulletin 35, no. 4 (April 2010): 296–305. http://dx.doi.org/10.1557/mrs2010.552.

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AbstractThis article reviews the materials science of graphene grown epitaxially on the hexagonal basal planes of SiC crystals and progress toward the deterministic manufacture of graphene devices. We show that the growth of epitaxial graphene on Si-terminated SiC(0001) differs from growth on the C-terminated SiC(0001) surface, resulting in, respectively, strong and weak coupling to the substrate and to successive graphene layers. Monolayer epitaxial graphene on either surface displays the expected electronic structure and transport characteristics of graphene, but the non-graphitic stacking of multilayer graphene on SiC(0001) determines an electronic structure much different from that of graphitic multilayers on SiC(0001). This materials system is rich in subtleties, and graphene grown on the two polar faces of SiC differs in important ways, but all of the salient features of ideal graphene are found in these epitaxial graphenes, and wafer-scale fabrication of multi-GHz devices already has been achieved.

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GIBB, SHAWN R., JAMES R. GRANDUSKY, MARK MENDRICK, and LEO J. SCHOWALTER. "PERFORMANCE OF PSEUDOMORPHIC ULTRAVIOLET LEDs GROWN ON BULK ALUMINUM NITRIDE SUBSTRATES." International Journal of High Speed Electronics and Systems 20, no. 03 (September 2011): 497–504. http://dx.doi.org/10.1142/s0129156411006787.

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Low dislocation density pseudomorphic epitaxial layers of Al x Ga 1- x N have been grown on c -face AlN substrates prepared from high quality bulk crystals. As reported previously, pseudomorphic growth yields very low dislocation density layers with atomically smooth surfaces throughout the active region of a full LED device structure. An advantage of the low dislocation density is the ability to n -type dope the high aluminum content Al x Ga 1- x N (x ~ 70%) epitaxial layers required for UVLED devices to obtain sheet resistances less than 350 Ohm/square for 0.5 μm thick layers. Here, we report on the characterization of our pseudomorphic epitaxial AlGaN layers via cathodoluminescence (CL) and on-wafer and initial packaged level characterization of fully fabricated pseudomorphic ultraviolet LEDs (PUVLEDs) with an emission wavelength between 250 - 265 nm. An additional benefit of PUVLED devices is the ability to run these devices at high input powers and current densities. Further, the aforementioned low dislocation density of the epitaxial structure results in improved device performance over previously published data. Mean output powers of greater than 4 mW were obtained on-wafer prior to thinning and roughening while output powers as high as 45 mW were achieved for packaged devices.

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Kallinger, Birgit, Bernd Thomas, and Jochen Friedrich. "Influence of Substrate Preparation and Epitaxial Growth Parameters on the Dislocation Densities in 4H-SiC Epitaxial Layers." Materials Science Forum 600-603 (September 2008): 143–46. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.143.

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Basal Plane Dislocations (BPD) in SiC are thought to cause degradation of bipolar devices as they can trigger the formation and expansion of stacking faults during device operation. Therefore, epilayers without any BPD are strongly recommended for the achievement of long-term reliable bipolar devices. Such epilayers can be achieved by supporting the conversion of BPD into Threading Dislocations (TD), which depends on the epitaxial growth mode (as described in literature). In this work, the influence of several pre-treatments of the SiC substrate prior to epitaxial growth and different epitaxial growth parameters on the reduction of the BPDs in the SiC epilayers was investigated on 4° off-axis substrates. The dislocation content in substrates and epilayers was determined by Defect Selective Etching (DSE) in molten KOH. The averaged BPD density in epitaxial layers can be reduced to < 100 cm-2 for substrate preparation techniques and to < 30 cm-2 for well-suited epitaxial growth parameters. A certain combination of epitaxial growth parameters leads to < 3 BPD/cm2 in the epitaxial layer.

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12

Miller, Dean J., Jeffrey D. Hettinger, Ronald P. Chiarello, and Hyung K. Kim. "Epitaxial growth of Cu2O films on MgO by sputtering." Journal of Materials Research 7, no. 10 (October 1992): 2828–32. http://dx.doi.org/10.1557/jmr.1992.2828.

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The epitaxial growth of Cu2O films is of significant interest for the unique potential they offer in the development of multilayer devices and superlattices. While fundamental studies may be carried out on epitaxial films prepared by any technique, the growth of artificially layered superlattices requires that films grow epitaxially during deposition. The present study examined the growth of Cu2O on MgO substrates directly during deposition by sputtering. Although epitaxial thin films of Cu2O could be produced, a mosaic structure was observed. The structure of the film may be related to the growth mechanism in which islands coalesce to form a continuous film.

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Chrysler, M., J. C. Jiang, G. Lorkowski, E. I. Meletis, and J. H. Ngai. "Deposition-last lithographically defined epitaxial complex oxide devices on Si(100)." Journal of Vacuum Science & Technology A 40, no. 5 (September 2022): 052701. http://dx.doi.org/10.1116/6.0001939.

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The epitaxial growth of SrTiO3 on Si(100) substrates that have been lithographically patterned to realize deposition-last, lithographically defined oxide devices on Si is explored. In contrast to traditional deposition-last techniques which create a physical hard mask on top of the substrate prior to epitaxial growth, a pseudomask is instead created by texturing the Si substrate surface itself. The Si is textured through a combination of reactive ion etching and wet-etching using a tetramethylammonium hydroxide solution. Desorbing the native SiOx at high temperatures prior to epitaxial growth in ultrahigh vacuum presents no complications as the patterned substrate is comprised entirely of Si. The inverted profile in which the epitaxial oxide device layer is above the textured pseudomask circumvents shadowing during deposition associated with conventional hard masks, thereby opening a pathway for highly scaled devices to be created.

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Kodolitsch, E., V. Sodan, M. Krieger, and N. Tsavdaris. "Impact of Epitaxial Defects on Device Behavior and their Correlation to the Reverse Characteristics of SiC Devices." Materials Science Forum 1062 (May 31, 2022): 49–53. http://dx.doi.org/10.4028/p-f26rb5.

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In this work we report on the impact of various crystalline defects present in 4H-SiC epitaxial layers on the electrical blocking characteristics of SiC power devices. Dedicated test structures were fabricated and electrically characterized in reverse bias mode. SiC substrate and epitaxial crystal defects, as well defects due to front-end processing were detected and classified using commercial inspection tools. Devices with a single defect-type were studied which leads to a direct correlation of the leakage current spot position within the device and the obtained blocking characteristics. This gives a better understanding of each crystal defect impact on device ́s performance which leads to an improvement in the reliability and cost reduction of SiC power devices.

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BAKIN, ANDREY S. "SiC HOMOEPITAXY AND HETEROEPITAXY." International Journal of High Speed Electronics and Systems 15, no. 04 (December 2005): 747–80. http://dx.doi.org/10.1142/s0129156405003417.

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SiC bulk material quality and surface preparation do not satisfy all the requirements for direct device production. It is necessary to have high quality thick epitaxial layers with low background doping concentration for the fabrication of SiC high power, high voltage, high frequency devices. Different aspects of SiC homo- and heteroepitaxial growth are discussed in this chapter. The wafer surface has a large impact on epitaxial layers, heterostructures and finally on device properties. Thus wafer processing before epitaxial growth is discussed in detail.

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Schowalter, Leo J. "Substrate Engineering With Plastic Buffer Layers." MRS Bulletin 21, no. 4 (April 1996): 45–49. http://dx.doi.org/10.1557/s0883769400035338.

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The advantage that epitaxy offers the electronics and optoelectronics industries is that it allows the possibility of producing precisely controlled layers of very high crystal quality. Heteroepitaxy of different materials offers the promise of tailoring device layers in clever ways that nature did not intend. However unlike fruit juices, nature has made it difficult to epitaxially combine different materials. As the preceding articles have clearly pointed out, it is very difficult to obtain smooth epitaxial layers that are free both of defects and strain when there is a lattice mismatch between the layers and their substrates.As already discussed in this issue, a uniform network of dislocations at the interface between a flat, uniform epitaxial layer and its substrate can completely relieve strain in the majority of the epitaxial layer. This would be a satisfactory situation for many devices so long as the active region of the device could be kept away from the interface. The problem is how to introduce the dislocations in an appropriate way. When an epitaxial layer has a larger lattice parameter than the underlying substrate, a misfit dislocation running along the interface represents a plane of atoms that has been removed from the epitaxial layer. (One would insert a plane of atoms if the epitaxial lattice parameter was smaller. For simplicity however we will continue to assume that the epitaxial layer has a larger lattice parameter.) It is not possible for a whole half plane of atoms, bounded by the dislocation at the interface and the substrate edges along the two sides, to be removed at once. The boundary between where the extra plane of atoms has been removed and where the epitaxial layer has not relaxed yet will represent a threading dislocation. This threading dislocation would continue to move as the size of the misfit dislocation along the interface grows. Ideally it moves all the way out to the substrate edge and vanishes there while the misfit dislocation along the interface would end up extending from one side of the substrate to the other. However other dislocations and other kinds of defects can effectively pin the threading dislocation resulting in an epitaxial layer with many threading dislocations. Unfortunately these threading dislocations are generally detrimental to most kinds of devices. It is precisely this high density of threading dislocations that limits applications of many heteroepitaxial layers.

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Skipper, Alec M., Priyanka Petluru, Daniel J. Ironside, Ashlee M. García, Aaron J. Muhowski, Daniel Wasserman, and Seth R. Bank. "All-epitaxial, laterally structured plasmonic materials." Applied Physics Letters 120, no. 16 (April 18, 2022): 161103. http://dx.doi.org/10.1063/5.0094677.

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Optoelectronic devices in the mid-infrared have attracted significant interest due to numerous potential applications in communications and sensing. Molecular beam epitaxial (MBE) growth of highly doped InAs has emerged as a promising “designer metal” platform for the plasmonic enhancement of mid-infrared devices. However, while typical plasmonic materials can be patterned to engineer strong localized resonances, the lack of lateral control in conventional MBE growth makes it challenging to create similar structures compatible with monolithically grown plasmonic InAs. To this end, we report the growth of highly doped InAs plasmonic ridges for the localized resonant enhancement of mid-IR emitters and absorbers. Furthermore, we demonstrate a method for regaining a planar surface above plasmonic corrugations, creating a pathway to epitaxially integrate these structures into active devices that leverage conventional growth and fabrication techniques.

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Gao, Junning, Zhibiao Hao, Lang Niu, Lai Wang, Changzheng Sun, Bin Xiong, Yanjun Han, et al. "Surface acoustic wave devices fabricated on epitaxial AlN film." Functional Materials Letters 09, no. 02 (April 2016): 1650034. http://dx.doi.org/10.1142/s179360471650034x.

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This paper reports surface acoustic wave (SAW) devices fabricated on AlN epitaxial film grown on sapphire, aiming to avoid the detrimental polarization axis inconsistency and refrained crystalline quality of the normally used polycrystalline AlN films. Devices with center frequency of 357 MHz and 714 MHz have been fabricated. The stop band rejection ratio of the as-obtained device reaches 24.5 dB and the pass band ripple is profoundly smaller compared to most of the reported AlN SAW devices with the similar configuration. Judging from the rather high edge dislocation level of the film used in this study, the properties of the SAW devices have great potential to be improved by further improving the crystalline quality of the film. It is then concluded that the AlN epitaxial film is favorable for high quality SAW devices to meet the high frequency and low power consumption challenges facing the signal processing components.

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Larkin, D. J. "An Overview of SiC Epitaxial Growth." MRS Bulletin 22, no. 3 (March 1997): 36–41. http://dx.doi.org/10.1557/s0883769400032747.

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SiC electronics research has been driven by the continued successful development of SiC technology for high-power and high-frequency semiconductor devices, and for service in high-temperature, corrosive, and high-radiation environments. The development of this technology has been accelerated by the introduction of commercially available SiC wafers, which have decreased in cost with time. The most recently demonstrated commercial SiC-based products include ultraviolet (uv)-flame sensors for terrestrial turbine engines and high-definition-television transmitter systems utilizing SiC-based transistors. Prototype microelectronic SiC devices include high-voltage Schottky rectifiers and power metal-oxide-semiconductor field-effect transistors, microwave and millimeter-wave devices, and high-temperature, radiation-resistant junction FETs (JFETs). These advancements in SiC-based device technology are attributable to both the successful development of commercially available, bulk SiC substrates and the recent advancements in SiC epitaxial layer growth technologies.

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Ghonge, S. G., E. Goo, R. Ramesh, R. Haakenaasen, and D. K. Fork. "Epitaxial ferroelectric thin films." Proceedings, annual meeting, Electron Microscopy Society of America 52 (1994): 572–73. http://dx.doi.org/10.1017/s0424820100170591.

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Microstructure of epitaxial ferroelectric/conductive oxide heterostructures on LaAIO3(LAO) and Si substrates have been studied by conventional and high resolution transmission electron microscopy. The epitaxial films have a wide range of potential applications in areas such as non-volatile memory devices, electro-optic devices and pyroelectric detectors. For applications such as electro-optic devices the films must be single crystal and for applications such as nonvolatile memory devices and pyroelectric devices single crystal films will enhance the performance of the devices. The ferroelectric films studied are Pb(Zr0.2Ti0.8)O3(PLZT), PbTiO3(PT), BiTiO3(BT) and Pb0.9La0.1(Zr0.2Ti0.8)0.975O3(PLZT).Electrical contact to ferroelectric films is commonly made with metals such as Pt. Metals generally have a large difference in work function compared to the work function of the ferroelectric oxides. This results in a Schottky barrier at the interface and the interfacial space charge is believed to responsible for domain pinning and degradation in the ferroelectric properties resulting in phenomenon such as fatigue.

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Zhang, Chao, Jianjun Song, Jie Zhang, and Shulin Liu. "Thermophysics Simulation of Laser Recrystallization of High-Ge-Content SiGe on Si Substrate." Advances in Condensed Matter Physics 2018 (August 7, 2018): 1–8. http://dx.doi.org/10.1155/2018/5863632.

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The high-Ge-content SiGe material on the Si substrate can be applied not only to electronic devices but also to optical devices and is one of the focuses of research and development in the field. However, due to the 4.2% lattice mismatch between Si and Ge, the epitaxial growth of the high-Ge-content SiGe epitaxial layer directly on the Si substrate has a high defect density, which will seriously affect the subsequent device performance. Laser recrystallization technique is a fast and low-cost method to effectively reduce threading dislocation density (TDD) in epitaxial high-Ge-content SiGe films on Si. In this paper, by means of finite element numerical simulation, a 808 nm laser recrystallization thermal physics model of a high-Ge-content SiGe film (for example, Si0.2Ge0.8) on a Si substrate was established (temperature distribution physical model of Si0.2Ge0.8 epitaxial layer under different laser power, Si0.2Ge0.8 epitaxial layer thickness, and initial temperature). The results of this paper can provide important technical support for the preparation of high-quality high-Ge-content SiGe epilayers on Si substrates by laser recrystallization.

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Han, Lili, Xiansheng Tang, Zhaowei Wang, Weihua Gong, Ruizhan Zhai, Zhongqing Jia, and Wei Zhang. "Research Progress and Development Prospects of Enhanced GaN HEMTs." Crystals 13, no. 6 (June 4, 2023): 911. http://dx.doi.org/10.3390/cryst13060911.

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With the development of energy efficiency technologies such as 5G communication and electric vehicles, Si-based GaN microelectronics has entered a stage of rapid industrialization. As a new generation of microwave and millimeter wave devices, High Electron Mobility Transistors (HEMTs) show great advantages in frequency, gain, and noise performance. With the continuous advancement of material growth technology, the epitaxial growth of semiconductor heterojunction can accurately control doping level, material thickness, and alloy composition. Consequently, HEMTs have been greatly improved from material structure to device structure. Device performance has also been significantly improved. In this paper, we briefly describe MOCVD growth technology and research progress of GaN HEMT epitaxial films, examine and compare the “state of the art” of enhanced HEMT devices, analyze the reliability and CMOS compatibility of GaN devices, and look to the future directions of possible development.

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Capano, Michael A., and Robert J. Trew. "Silicon Carbide Electronic Materials and Devices." MRS Bulletin 22, no. 3 (March 1997): 19–23. http://dx.doi.org/10.1557/s0883769400032711.

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The development of SiC for electronic applications has been a subject of intense research for nearly 40 years. Much of this research is motivated by the extraordinary combination of physical properties possessed by SiC, especially in the development of SiC-based devices for specific high-temperature, high-power, or high-frequency applications that are not suitable for Si- or GaAs-based devices. During the early years of SiC research and development, a significant amount of good, fundamental research was performed, but the development of commercially available SiC-based devices was retarded by low-quality bulk materials and inadequate epitaxial processes. In the late 1980s, research at academic institutions, such as North Carolina State University, and industrial laboratories, such as Westinghouse (now Northrup-Grumman), Advanced Technology Materials, Inc. (ATMI), and Cree Research, Inc., coupled with the commercial offering of highquality SiC wafers from Cree, created an opportunity for further advancement. Improvements in epitaxial processes and device processing strategies were also realized during this time. Together these factors have enabled the fabrication of high-quality device structures and have generated increased research and funding activities in SiC electronic devices.

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Lear, Kevin L., and Eric D. Jones. "Vertical-Cavity Surface-Emitting Lasers." MRS Bulletin 27, no. 7 (July 2002): 497–501. http://dx.doi.org/10.1557/mrs2002.166.

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AbstractThis issue of MRS Bulletin presents a review of the progress that vertical-cavity surface-emitting lasers (VCSELs) have made throughout the wavelength spectrum. A VCSEL is a semiconductor laser diode in which light propagates normal to the epitaxial layers. In its older cousin, the Fabry—Pérot laser, light propagates in the plane of the epitaxial layers and reflects from mirrors formed by cleaving a crystal facet across the active layers. No cleaving is required for VCSEL mirrors, which are formed from multiple layers of epitaxially grown or otherwise-deposited thin films. The simple twist in the direction of the laser beam with respect to the epitaxial layers is responsible for most of the unique attributes of VCSELs, which arise from their short cavity length, their completely lithographically defined cross section, and their reliance on only wafer-scale processes for device fabrication. The articles in this issue cover a range of topics, including blue devices, short-wavelength communications lasers, recent advances in 1.3-μm VCSELs, fundamental materials issues related to distributed Bragg reflectors, theoretical quantum-well gain calculations, and work on quantum-dot VCSELs.

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Bruzzi, M., M. Bucciolini, M. Casati, D. Menichelli, C. Talamonti, C. Piemonte, and B. G. Svensson. "Epitaxial silicon devices for dosimetry applications." Applied Physics Letters 90, no. 17 (April 23, 2007): 172109. http://dx.doi.org/10.1063/1.2723075.

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Hamann, Danielle Marie, Swapna Sunkari, Joshua Justice, and Hrishikesh Das. "Investigation into the Influence of Substrate Dislocations in 4H-SiC on the Subsequent Epitaxy and Resultant Device Performance." ECS Meeting Abstracts MA2022-02, no. 37 (October 9, 2022): 1352. http://dx.doi.org/10.1149/ma2022-02371352mtgabs.

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As the demand for SiC based devices continues to grow, there is an aggressive push to drive down sources of yield loss and device failures. One route to mitigate this issue is via connection of device yield loss to defects in the bare substrate material. Here, high throughput X-ray topography in conjunction with KOH etching and photoluminescence imaging were utilized to detect and classify various substrate dislocations. Subsequent epitaxial layers, grown on the substrates from various vendors, were analyzed using a confocal microscope to determine which substrate defects propagated into the epi. Data indicates that there is a good correlation between substrate BPDs nucleating into epitaxial stacking faults. This is supported by data from hundreds of different boules demonstrating that there is a relationship between the number of BPDs in the substrate and the number of partials and stacking faults detected in the resultant epitaxial layer. BPDs are not the only substrate dislocation nucleation source as the data also suggests other parallel sources are involved. Thousands of MOSFET and Diode devices were analyzed to understand the influence that substrate defects, propagated to the epitaxial layers, have on device leakage and yield loss. It was determined that MOSFET devices are more sensitive to the stacking faults that nucleate from the substrate dislocations compared to Diodes. While most of the stacking faults and other dislocations that occur in the epi layers do not independently result in device failures or leakage, an increase in the density of these defects within a die, can lead to increased leakage and decreased device performance. The inherent variability of these relationships requires the analysis of very large numbers of wafers to see the clear trends. This work uses a combination of X-ray and photoluminescence detection techniques to trace dislocations in substrates that nucleate into epitaxy layers and result in device leakage and failure over hundreds of wafers and thousands of devices. This correlation between device characteristics and crystal dislocations provides necessary information in determining which defects are most necessary to reduce or eliminate to improve device yield and performance.

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Sumakeris, Joseph J., Mrinal K. Das, Seo Young Ha, Edward Hurt, Kenneth G. Irvine, Michael J. Paisley, Michael J. O'Loughlin, et al. "Development of Epitaxial SiC Processes Suitable for Bipolar Power Devices." Materials Science Forum 483-485 (May 2005): 155–58. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.155.

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We present a survey of the most important factors relating to an epitaxial SiC growth process that is suitable for bipolar power devices. During the last several years, we have advanced our hot-wall SiC epitaxial growth technology to the point that we can support the transition of bipolar power devices from demonstrations to applications. Two major concerns in developing a suitable epitaxial technology are epilayer uniformity and extended defect density. Our state-of-theart capability permits the realization of 1-cm2 area devices with exceptional yields. Another major concern is the stability of bipolar devices during forward conduction. We have developed proprietary substrate and epilayer preparation technologies that have essentially eliminated Vf drift as a significant barrier to the exploitation of SiC based bipolar devices.

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Tominaga, Takaaki, Naoyuki Kawabata, Akihiro Koyama, Takanori Tanaka, Hiroshi Watanabe, Nobuyuki Tomita, Naruhisa Miura, Takeharu Kuroiwa, and Satoshi Yamakawa. "Low Resistivity SiC Devices with a Drift Layer Optimized by Variational Approach." Materials Science Forum 858 (May 2016): 765–68. http://dx.doi.org/10.4028/www.scientific.net/msf.858.765.

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A reduction of drift resistivity by an optimized epitaxial layer has been theoretically calculated using variational approach. An epitaxial growth was carried out based on the calculated design of the drift layer for a 1.7 kV SBD, with a conventional epitaxial growth for comparison, to experimentally prove a reduction of drift resistivity. An improvement of trade-off relationships for the SBD with an optimized epitaxial layer has been revealed through the investigation of their electrical characteristics.

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Wang, Jian-Huan, Ting Wang, and Jian-Jun Zhang. "Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)." Nanomaterials 11, no. 3 (March 19, 2021): 788. http://dx.doi.org/10.3390/nano11030788.

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Controllable growth of wafer-scale in-plane nanowires (NWs) is a prerequisite for achieving addressable and scalable NW-based quantum devices. Here, by introducing molecular beam epitaxy on patterned Si structures, we demonstrate the wafer-scale epitaxial growth of site-controlled in-plane Si, SiGe, and Ge/Si core/shell NW arrays on Si (001) substrate. The epitaxially grown Si, SiGe, and Ge/Si core/shell NW are highly homogeneous with well-defined facets. Suspended Si NWs with four {111} facets and a side width of about 25 nm are observed. Characterizations including high resolution transmission electron microscopy (HRTEM) confirm the high quality of these epitaxial NWs.

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Kosugi, Ryoji, Yuuki Sakuma, Kazutoshi Kojima, Sachiko Itoh, Akiyo Nagata, Tsutomu Yatsuo, Yasunori Tanaka, and Hajime Okumura. "Development of SiC Super-Junction (SJ) Devices by Multi-Epitaxial Growth." Materials Science Forum 778-780 (February 2014): 845–50. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.845.

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Super-junction (SJ) devices have been developed to improve the trade-off relationship between the blocking voltage (VBD) and specific on-resistance in unipolar power devices. This SJ structure effect is expected in SiC unipolar devices. Multi-epitaxial growth is a known fabrication method for SJ structures where epitaxial growth and ion implantation are repeated alternately until a certain drift-layer thickness is achieved. In this study, we fabricated two types of test elemental groups with an SJ structure to evaluate the breakdown voltage (VBD) and specific resistivity of the drift layer (Rdrift). Experimental results show that VBDexceeded the theoretical limit of the 4H-SiC by 300V, and Rdriftagreed well with the estimated value from the device simulation. The beneficial effects of the SJ structure in the SiC material on VBDand Rdriftwere confirmed for the first time.

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Matzen, S., S. Gable, N. Lequet, S. Yousfi, K. Rani, T. Maroutian, G. Agnus, H. Bouyanfif, and P. Lecoeur. "High piezoelectricity in epitaxial BiFeO₃ microcantilevers." Applied Physics Letters 121, no. 14 (October 3, 2022): 142901. http://dx.doi.org/10.1063/5.0105404.

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The large switchable ferroelectric polarization and lead-free composition of BiFeO3 make it a promising candidate as an active material in numerous applications, in particular, in micro-electro-mechanical systems (MEMS) when BiFeO3 is integrated in a thin film form on a silicon substrate. Here, 200-nm-thick Mn-doped BiFeO3 thin films have been epitaxially grown on a SrRuO3/SrTiO3/Si substrate and patterned into microcantilevers as prototype device structures for piezoelectric actuation. The devices demonstrate excellent ferroelectric response with a remanent polarization of 55 μC/cm2. The epitaxial BiFeO3 MEMS exhibit very high piezoelectric response with transverse piezoelectric coefficient d31 reaching 83 pm/V. The BiFeO3 cantilevers show larger electromechanical performance (the ratio of curvature/electric field) than that of state-of-art piezoelectric cantilevers, including well-known PZT (Pb(Zr,Ti)O3) and the hyper-active PMN–PT (Pb(Mg1/3Nb2/3)O3-PbTiO3). In addition, the piezoelectricity in BiFeO3 MEMS is found to depend on the ferroelectric polarization direction, which could originate from the flexoelectric effect and be exploited to further enhance the electromechanical performance of the devices. These results could potentially lead to a replacement of lead-based piezoelectrics by BiFeO3 in many microdevices.

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Fu, Wai Yuen, and Hoi Wai Choi. "Progress and prospects of III-nitride optoelectronic devices adopting lift-off processes." Journal of Applied Physics 132, no. 6 (August 14, 2022): 060903. http://dx.doi.org/10.1063/5.0089750.

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Lift-off processes have been developed as the enabling technology to free the epitaxial III-nitride thin film from a conventional growth substrate such as sapphire and silicon in order to realize a variety of novel device designs and structures not otherwise possible. An epitaxial lift-off (ELO) process can be adopted to transfer the entire film to an arbitrary foreign substrate to achieve various functions, including enhancement of device performance, improvement of thermal management, and to enable flexibility among others. On the other hand, partial ELO techniques, whereby only a portion of the thin-film is detached from the substrate, can be employed to realize unconventional device structures or geometries, such as apertured, pivoted, and flexible devices, which may be exploited for various photonic structures or optical cavities. This paper reviews the development of different lift-off strategies and processes for III-nitride materials and devices, followed by a perspective on the future directions of this technology.

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Zhilenkov, A. "GaN Materials Nanostructures Growth Control in the Epitaxial Units." Solid State Phenomena 265 (September 2017): 627–30. http://dx.doi.org/10.4028/www.scientific.net/ssp.265.627.

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The article overviews the results of the research into the peculiarities of GaN and AlGaN epitaxy from metal organic compounds, the influence of its peculiarities on the formation of GaN epitaxial layers and gives recommendations on the development of new methods for GaN epitaxial growth as well as on the research how they impact the characteristics of grown layers. The use of such semi-conductors allows obtaining full-color RGB light sources, increasing record density of a digital data storage device, getting high-capacity and efficient sources of white light. The electronic properties of such semi-conductors allow using them as a basis for high-power and high-frequency transistors and other electronic devices the specifications of which are competitive with those of SiC-based devices.

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Batstone, J. L. "Structural and electronic properties of defects in semiconductors." Proceedings, annual meeting, Electron Microscopy Society of America 53 (August 13, 1995): 4–5. http://dx.doi.org/10.1017/s0424820100136398.

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The development of growth techniques such as metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy during the last fifteen years has resulted in the growth of high quality epitaxial semiconductor thin films for the semiconductor device industry. The III-V and II-VI semiconductors exhibit a wide range of fundamental band gap energies, enabling the fabrication of sophisticated optoelectronic devices such as lasers and electroluminescent displays. However, the radiative efficiency of such devices is strongly affected by the presence of optically and electrically active defects within the epitaxial layer; thus an understanding of factors influencing the defect densities is required.Extended defects such as dislocations, twins, stacking faults and grain boundaries can occur during epitaxial growth to relieve the misfit strain that builds up. Such defects can nucleate either at surfaces or thin film/substrate interfaces and the growth and nucleation events can be determined by in situ transmission electron microscopy (TEM).

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Baker, Jack, Craig P. Allford, Sara-Jayne Gillgrass, Richard Forrest, David G. Hayes, Josie Nabialek, Curtis Hentschel, J. Iwan Davies, Samuel Shutts, and Peter M. Smowton. "Quick Fabrication VCSELs for Characterisation of Epitaxial Material." Applied Sciences 11, no. 20 (October 9, 2021): 9369. http://dx.doi.org/10.3390/app11209369.

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A systematic analysis of the performance of VCSELs, fabricated with a decreasing number of structural elements, is used to assess the complexity of fabrication (and therefore time) required to obtain sufficient information on epitaxial wafer suitability. Initially, sub-mA threshold current VCSEL devices are produced on AlGaAs-based material, designed for 940 nm emission, using processing methods widely employed in industry. From there, stripped-back Quick Fabrication (QF) devices, based on a bridge-mesa design, are fabricated and this negates the need for benzocyclcobutane (BCB) planarisation. Devices are produced with three variations on the QF design, to characterise the impact on laser performance from removing time-consuming process steps, including wet thermal oxidation and mechanical lapping used to reduce substrate thickness. An increase in threshold current of 1.5 mA for oxidised QF devices, relative to the standard VCSELs, and a further increase of 1.9 mA for unoxidised QF devices are observed, which is a result of leakage current. The tuning of the emission wavelength with current increases by ~0.1 nm/mA for a VCSEL with a 16 μm diameter mesa when the substrate is unlapped, which is ascribed to the increased thermal resistance. Generally, relative to the standard VCSELs, the QF methods employed do not significantly impact the threshold lasing wavelength and the differences in mean wavelengths of the device types that are observed are attributed to variation in cavity resonance with spatial position across the wafer, as determined by photovoltage spectroscopy measurements.

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Nishio, Johji, Hirokuni Asamizu, Mitsuhiro Kushibe, Hidenori Kitai, and Kazutoshi Kojima. "Reduction in Background Carrier Concentration for 4H-SiC C-face Epitaxial Growth." MRS Advances 1, no. 54 (2016): 3631–36. http://dx.doi.org/10.1557/adv.2016.326.

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ABSTRACT Reduction in background carrier concentration has been investigated for 4H-SiC C-face epitaxial growth in order to be applied for ultra-high voltage power devices. Optimizing epitaxial growth parameters made it possible to achieve 7.6x1013 cm-3 as the background carrier concentration within a whole area of specular 3-inch wafers. In addition to the background carrier concentration reduction, epitaxial film thickness variation, surface defect density and the carrier lifetime have been confirmed to fulfill the requirements for the devices.

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Chen, Gang, Song Bai, Ao Liu, Run Hua Huang, Yong Hong Tao, Lin Wang, Yun Li, and Zhi Fei Zhao. "Fabrication and Characterisation of 1200V 4H-SiC VJFET." Applied Mechanics and Materials 716-717 (December 2014): 1434–37. http://dx.doi.org/10.4028/www.scientific.net/amm.716-717.1434.

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Results are presented for the silicon carbide (SiC) vertical channel junction field effect transistor (VJFET) fabricated based on in-house SiC epitaxial wafer suitable for power devices. We have demonstrated continuous improvement in blocking voltage, forward drain current under high temperature. The SiC VJFET device’s current density is 360 A/cm2 and current is 11 A at VG= 3 V and VD = 2 V, with related specific on-resistance 5.5 mΩ·cm2. The device exceeds 1200 V at gate bias VG = -10V. The current of the SiC VJFET device is 4 A and the reverse voltage is 1200V at the 200 °C high temperature.

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Burk, Albert A., Michael J. O'Loughlin, Joseph J. Sumakeris, C. Hallin, Elif Berkman, Vijay Balakrishna, Jonathan Young, et al. "SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices." Materials Science Forum 600-603 (September 2008): 77–82. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.77.

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The development of SiC bulk and epitaxial materials is reviewed with an emphasis on epitaxial growth using high-throughput, multi-wafer, vapor phase epitaxial (VPE) warm-wall planetary reactors. It will be shown how the recent emergence of low-cost high-quality 100-mm diameter epitaxial SiC wafers is enabling the economical production of advanced wide-bandgap Power–Switching devices.

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van Brunt, Edward, Albert Burk, Daniel J. Lichtenwalner, Robert Leonard, Shadi Sabri, Donald A. Gajewski, Andrew Mackenzie, Brett Hull, Scott Allen, and John W. Palmour. "Performance and Reliability Impacts of Extended Epitaxial Defects on 4H-SiC Power Devices." Materials Science Forum 924 (June 2018): 137–42. http://dx.doi.org/10.4028/www.scientific.net/msf.924.137.

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This work explores the effects of extended epitaxial defects on 4H-SiC power devices. Advanced defect mapping techniques were used on large quantities of power device wafers, and data was aggregated to correlate device electrical characteristics to defect content. 1200 V class Junction Barrier Schottky (JBS) diodes and MOSFETs were examined in this manner; higher voltage 3.3 kV class devices were examined as well. 3C inclusions and triangular defects, as well as heavily decorated substrate scratches, were found to be device killing defects. Other defects were found to have negligible impacts on device yield, even in the case of extremely high threading dislocation content. Defect impacts on device reliability was explored on MOS-gate structures, as well as long-term device blocking tests on both MOSFETs and JBS diodes. Devices that passed on-wafer electrical parametric tests were found to operate reliably in these tests, regardless of defect content.

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Zhao, Ai Ping, Hong Deng, Feng Liu, and Xue Ran Deng. "The Research about the III-Nitride Compounds Epitaxially Grown on Si Substrate." Advanced Materials Research 399-401 (November 2011): 935–44. http://dx.doi.org/10.4028/www.scientific.net/amr.399-401.935.

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The III-nitride compounds epitaxially grown on Si substrate have attracted more and more attentions and some progress have been achieved. Many methods have been tried to tackle the issue which caused by the large lattice mismatch and thermal expansion coefficient mismatches between silicon substrate and the III-nitride compounds. This paper presents buffer layer technology, selective area and lateral epitaxial over growth technology, and presents the researches about the III-nitride devices. Semi polar and non-polar GaN films grown on Si (such as Si(110), Si(112), Si(001) et al.) also have been instructed. At the end of this paper, the development trend of epitaxial technology has been discussed.

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Tan, Ming, Wei-Di Liu, Xiao-Lei Shi, Qiang Sun, and Zhi-Gang Chen. "Minimization of the electrical contact resistance in thin-film thermoelectric device." Applied Physics Reviews 10, no. 2 (June 2023): 021404. http://dx.doi.org/10.1063/5.0141075.

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High electrical contact resistance refrains the performance of thin-film thermoelectric devices at the demonstrative level. Here, an additional Ti contact layer is developed to minimize the electrical contact resistance to ∼4.8 Ω in an as-assembled thin-film device with 50 pairs of p–n junctions. A detailed interface characterization demonstrates that the low electrical contact resistance should be mainly attributed to the partial epitaxial growth of Bi2Te3-based thin-film materials. Correspondingly, the superlow electrical contact resistance facilitates the applicability of the out-of-plane thin-film device and results in an ultrahigh surface output power density of ∼81 μW cm−2 at a low temperature difference of 5 K. This study illustrates the Ti contact layer that strengthens the contact between Cu electrodes and Bi2Te3-based thermoelectric thin films mainly through partial epitaxial growth and contributes to high-performance thin-film thermoelectric devices.

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Nathan, Arokia, Walter Allegretto, Henry P. Baltes, and Tom Smy. "Carrier transport in GaAs Hall-cross devices." Canadian Journal of Physics 65, no. 8 (August 1, 1987): 956–60. http://dx.doi.org/10.1139/p87-150.

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We present two-dimensional modeling of carrier transport in cross-shaped N-type Hall devices fabricated of a GaAs epitaxial layer on a semi-insulating GaAs substrate. Using a finite-element scheme, we obtain the electrostatic potential and current density in such devices, when operated in the ohmic region and exposed to a magnetic field. In particular, we consider the carrier transport in the device when it is subject to various configurations of discontinuous magnetic induction. In addition, the magnetic response of these cross-shaped Hall devices is analyzed with respect to moving bubble domains.

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Zivasatienraj, Bill, M. Brooks Tellekamp, and W. Alan Doolittle. "Epitaxy of LiNbO3: Historical Challenges and Recent Success." Crystals 11, no. 4 (April 9, 2021): 397. http://dx.doi.org/10.3390/cryst11040397.

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High-quality epitaxial growth of thin film lithium niobate (LiNbO3) is highly desirable for optical and acoustic device applications. Despite decades of research, current state-of-the-art epitaxial techniques are limited by either the material quality or growth rates needed for practical devices. In this paper, we provide a short summary of the primary challenges of lithium niobate epitaxy followed by a brief historical review of lithium niobate epitaxy for prevalent epitaxial techniques. Available figures of merit for crystalline quality and optical transmission losses are given for each growth method. The highest crystalline quality lithium niobate thin film was recently grown by halide-based molecular beam epitaxy and is comparable to bulk lithium niobate crystals. However, these high-quality crystals are grown at slow rates that limit many practical applications. Given the many challenges that lithium niobate epitaxy imposes and the wide variety of methods that have unsuccessfully attempted to surmount these barriers, new approaches to lithium niobate epitaxy are required to meet the need for simultaneously high crystalline quality and sufficient thickness for devices not currently practical by existing techniques.

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Lo Nigro, Raffaella, Giuseppe Greco, L. Swanson, G. Fisichella, Patrick Fiorenza, Filippo Giannazzo, S. Di Franco, et al. "Potentialities of Nickel Oxide as Dielectric for GaN and SiC Devices." Materials Science Forum 740-742 (January 2013): 777–80. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.777.

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This paper reports on a structural and electrical analysis of nickel oxide (NiO) films grown both on AlGaN/GaN heterostructures and on 4H-SiC epilayers. The films were grown by metal organic chemical vapor deposition (MOCVD). The structural analysis showed epitaxially oriented films over the hexagonal substrates. The electrical characterization of simple devices onto AlGaN/GaN heterostructures enabled to demonstrate a dielectric constant of 11.7 and a reduction of the leakage current in insulated gate structures. On the other hand, epitaxial NiO films grown onto 4H-SiC epilayers exhibited the presence of an interfacial SiO2layer and twinned NiO grains, and a lower dielectric constant.

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Chien, Feng-Tso, Zhi-Zhe Wang, Cheng-Li Lin, Tsung-Kuei Kang, Chii-Wen Chen, and Hsien-Chin Chiu. "150–200 V Split-Gate Trench Power MOSFETs with Multiple Epitaxial Layers." Micromachines 11, no. 5 (May 15, 2020): 504. http://dx.doi.org/10.3390/mi11050504.

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A rating voltage of 150 and 200 V split-gate trench (SGT) power metal-oxide- semiconductor field-effect transistor (Power MOSFET) with different epitaxial layers was proposed and studied. In order to reduce the specific on-resistance (Ron,sp) of a 150 and 200 V SGT power MOSFET, we used a multiple epitaxies (EPIs) structure to design it and compared other single-EPI and double-EPIs devices based on the same fabrication process. We found that the bottom epitaxial (EPI) layer of a double-EPIs structure can be designed to support the breakdown voltage, and the top one can be adjusted to reduce the Ron,sp. Therefore, the double-EPIs device has more flexibility to achieve a lower Ron,sp than the single-EPI one. When the required voltage is over 100 V, the on-state resistance (Ron) of double-EPIs device is no longer satisfying our expectations. A triple-EPIs structure was designed and studied, to reduce its Ron, without sacrificing the breakdown voltage. We used an Integrated System Engineering-Technology Computer-Aided Design (ISE-TCAD) simulator to investigate and study the 150 V SGT power MOSFETs with different EPI structures, by modulating the thickness and resistivity of each EPI layer. The simulated Ron,sp of a 150 V triple-EPIs device is only 62% and 18.3% of that for the double-EPIs and single-EPI structure, respectively.

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Moatti, A., R. Bayati, S. Singamaneni, and J. Narayan. "Epitaxial integration of TiO2 with Si(100) through a novel approach of oxidation of TiN/Si(100) epitaxial heterostructure." MRS Advances 1, no. 37 (2016): 2629–34. http://dx.doi.org/10.1557/adv.2016.463.

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ABSTRACTIn this study, we provide a novel approach to the epitaxial integration of TiO2 with Si(100) and investigate the defect mediated ferromagnetism in TiO2 structure. Epitaxial TiO2 thin films were grown on a TiN/Si(100) epitaxial heterostructure through oxidation of TiN where a single crystalline rutile-TiO2 (r-TiO2) with a [110] out-of-plane orientation was obtained. The epitaxial relationship is determined to be TiO2(1$\bar 1$0)||TiN(100) and TiO2(110)||TiN(110). We rationalized this epitaxy using the domain matching epitaxy paradigm. First TiN is grown epitaxially on Si(100). Subsequently, TiN/Si(100) samples are oxidized to create r-TiO2/TiN/Si(100) epitaxial heterostructures. The details of the mechanism behind the oxidation of single crystalline TiN to TiO2 was investigated using atomic scale high resolution electron microscopy techniques. Defects introduced to the heterostructure during oxidation caused ferromagnetism in TiO2 thin film which is reversible and can be tuned by controlling oxygen partial pressure. The source of magnetization is correlated with the presence of oxygen vacancy leading to introduction of two localized states; hybrid and polaron among neighboring Ti atoms, and titanium vacancy providing four holes to form molecular oxygen. We present structure property correlations and its impact on the next generation solid state devices.

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Amamou, Walid, Patrick M. Odenthal, Elizabeth J. Bushong, Dante J. O’Hara, Yunqiu Kelly Luo, Jeremiah van Baren, Igor Pinchuk, et al. "Large area epitaxial germanane for electronic devices." 2D Materials 2, no. 3 (August 6, 2015): 035012. http://dx.doi.org/10.1088/2053-1583/2/3/035012.

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Wang, C. A., G. W. Charache, and H. K. Choi. "Epitaxial growth of GaInAsSb for thermophotovoltaic devices." IEE Proceedings - Optoelectronics 147, no. 3 (June 1, 2000): 193–98. http://dx.doi.org/10.1049/ip-opt:20000480.

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Panchal, V., K. Cedergren, R. Yakimova, A. Tzalenchuk, S. Kubatkin, and O. Kazakova. "Small epitaxial graphene devices for magnetosensing applications." Journal of Applied Physics 111, no. 7 (April 2012): 07E509. http://dx.doi.org/10.1063/1.3677769.

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Lam, S. K. H., and B. Sankrithyan. "HTSC devices fabricated by selective epitaxial growth." Superconductor Science and Technology 12, no. 4 (January 1, 1999): 215–18. http://dx.doi.org/10.1088/0953-2048/12/4/007.

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Journal articles on the topic 'Epitaxial Devices'

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