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Journal articles on the topic 'Epitaxial Deposition'

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Author: Grafiati
Published: 6 September 2023

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1

Wang, Wenliang, Yulin Zheng, Yuan Li, Xiaochan Li, Liegen Huang, Zhuoran Li, Zhenya Lu, and Guoqiang Li. "Control of interfacial reactions for the growth of high-quality AlN epitaxial films on Cu(111) substrates." CrystEngComm 19, no. 48 (2017): 7307–15. http://dx.doi.org/10.1039/c7ce01803g.

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High-quality AlN epitaxial films have been epitaxially grown on Cu(111) substrates by pulsed laser deposition (PLD) through effectively controlling the interfacial reactions between AlN epitaxial films and Cu substrates.
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2

Miller, Dean J., Jeffrey D. Hettinger, Ronald P. Chiarello, and Hyung K. Kim. "Epitaxial growth of Cu2O films on MgO by sputtering." Journal of Materials Research 7, no. 10 (October 1992): 2828–32. http://dx.doi.org/10.1557/jmr.1992.2828.

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The epitaxial growth of Cu2O films is of significant interest for the unique potential they offer in the development of multilayer devices and superlattices. While fundamental studies may be carried out on epitaxial films prepared by any technique, the growth of artificially layered superlattices requires that films grow epitaxially during deposition. The present study examined the growth of Cu2O on MgO substrates directly during deposition by sputtering. Although epitaxial thin films of Cu2O could be produced, a mosaic structure was observed. The structure of the film may be related to the growth mechanism in which islands coalesce to form a continuous film.
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3

Duan, Chun Yan, Bin Ai, Jian Jun Lai, Chao Liu, You Jun Deng, and Hui Shen. "APCVD Deposition of Si Film on SiO2 Patterned Si (111) Substrates for Solar Cells." Advanced Materials Research 295-297 (July 2011): 1211–16. http://dx.doi.org/10.4028/www.scientific.net/amr.295-297.1211.

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We have investigated the deposition of silicon films on SiO2 patterned Si(111) substrates by atmospheric pressure chemical vapor deposition (APCVD) under standard condition. Oxidized silicon wafers with different sizes of circular and striated patterns were used as substrates for deposition of 35 μm silicon films. The influence of surface morphologies of substrates on epitaxial Si films has been discussed. The crystalline structures of the epitaxial Si films rely on the prepatterned substrates. Triangular prism-shaped grains have been obtained after depositing silicon film on substrates with circular patterns. While different size polycrystalline silicon grains appear on surfaces of Si films grown on SiO2 regions of substrates along the axis of striated patterns. Twins defects were observed in epitaxial Si films grown on SiO2 layers of the pretreated substrates.
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4

M C Ávila, Renan, Roney C da Silva, and Rogério J Prado. "Preparation of epitaxial BiFeO3 thin films on Si(001) substrates by pulsed electron deposition." Physics & Astronomy International Journal 7, no. 2 (April 3, 2023): 77–81. http://dx.doi.org/10.15406/paij.202307.00288.

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To achieve the epitaxial thin films deposition, it is necessary to use properly oriented substrates, with or without buffer layers, matching the lattice parameters of the epitaxial thin film we want to grow. In this work, the deposition of epitaxial Bi2SiO5(200) and BiFeO3(001) thin films on Si(001) substrates by pulsed electron deposition (PED) technique is reported without special substrate preparation. The deposition of epitaxial BSO(200) and T-BFO(001) directly onto Si(001) substrates during a single target deposition process is relevant and presents enormous potential to reduce costs and improve practicality, interface quality and BFO integration efficiency with Si(001) substrates.
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5

Wijaranakula, W., P. M. Burke, L. Forbes, and J. H. Matlock. "Effect of pre- and postepitaxial deposition annealing on oxygen precipitation in silicon." Journal of Materials Research 1, no. 5 (October 1986): 698–704. http://dx.doi.org/10.1557/jmr.1986.0698.

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Substrate material used for fabrication of P/P + epitaxial silicon wafers was preannealed at 650 °C in nitrogen ambient prior to the epitaxial deposition process for various times up to 300 min. The substrate material originated from a characterized crystal ingot. The results show that annealing before epitaxial deposition can preserve oxide precipitate nuclei from dissolution during the epitaxial deposition process. Additional postepitaxial annealing at 750 °C further enhances the growth of bulk defects.
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6

Chung, Jun Ki, Won Jeong Kim, Sung Gap Lee, and Cheol Jin Kim. "Growth and Characterization of BaZrO3 Buffer Layer for Textured YBCO Thin Films Growth on MgO (00l) Substrate." Key Engineering Materials 336-338 (April 2007): 715–18. http://dx.doi.org/10.4028/www.scientific.net/kem.336-338.715.

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Superconducting YBa2Cu3O7-δ(YBCO) films were grown on MgO single crystalline substrates using a BaZrO3 (BZO) buffer layer deposited by a pulsed laser deposition (PLD). Deposition condition has been optimized to obtain good epitaxial BZO film followed by deposition of YBCO superconducting films. The crystallinity and microstructure of epitaxial YBCO/ BZO/ MgO (00l) films were investigated by a two-dimensional x-ray diffraction and a field emission scanning electron microscope. The in-plane (φ-scan) measurements for the BZO films (200 ~ 500 nm thick) grown on MgO substrates revealed a narrow full width half maximum (0φ = 2o). The XRD results exhibited that YBCO films with a BZO buffer layer were well oriented in the [00l] direction perpendicular to the substrate surface. The BZO films also showed homogeneous and dense surface morphologies. By the deposition of a subsequent BZO buffer layer, YBCO was grown epitaxially on MgO with results showing a critical current density (Jc) of ~ 3.3 × 106 A/cm2 and a critical temperature (Tc) of 86 K.
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7

Zhang, Jiming, Gregory T. Stauf, Robin Gardiner, Peter Van Buskirk, and John Steinbeck. "Single molecular precursor metal-organic chemical vapor deposition of MgAl2O4 thin films." Journal of Materials Research 9, no. 6 (June 1994): 1333–36. http://dx.doi.org/10.1557/jmr.1994.1333.

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MgAl2O4 films have been grown epitaxially on both Si(100) and MgO(100) by a novel single source metal-organic chemical vapor deposition (MOCVD) process. A single molecular source reagent [magnesium dialuminum isopropoxide, MgAl2(OC3H7)8] having the desired Mg: Al ratio was dissolved in a liquid solution and flash-vaporized into the reactor. Both thermal and plasma-enhanced MOCVD were used to grow epitaxial MgAl2O4 thin films. The Mg: Al ratio in the deposited films was the same as that of the starting compound (Mg: Al = 1:2) over a wide range of deposition conditions. The deposition temperature required for the formation of crystalline spinel was found to be significantly reduced and crystallinity was much improved on Si by using a remote plasma-enhanced MOCVD process. The epitaxial nature of the MgAl2O4 films was established by x-ray pole figure analysis.
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8

Duan, Ying Wen. "Epitaxial Pd-Doped LaFeO3 Films Grown on (100) SrTiO3 by Pulsed Laser Deposition." Advanced Materials Research 936 (June 2014): 282–86. http://dx.doi.org/10.4028/www.scientific.net/amr.936.282.

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Single-crystalline, epitaxial LaFeO3 films with 5 at. % substitution of Pd on the Fe site are grown on (100) SrTiO3 substrate by pulsed-laser deposition technique. The epitaxial orientation relationships are (110)[001]LFPO||(100)[001]STO. X-ray diffraction and transmission electron microscopy reveal that the LFPO films have high structural quality and an atomically sharp LFPO/STO interface. After reduction treatments of as-grown LFPO films, very little Pd escaped the LFPO lattice onto the film surface, the formed Pd (100) particles are oriented epitaxially, and parallel to the LFPO films surface.
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9

Lin, Yunhao, Meijuan Yang, Wenliang Wang, Zhiting Lin, and Guoqiang Li. "Quality-enhanced GaN epitaxial films on Si(111) substrates by in situ deposition of SiN on a three-dimensional GaN template." RSC Advances 6, no. 88 (2016): 84794–800. http://dx.doi.org/10.1039/c6ra16842f.

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10

Li, Chunling, Yanwei Liu, Yueliang Zhou, Zhenghao Chen, Hong Chen, and Yong Zhu. "Heteroepitaxial Growth of c-Axis-Oriented BaTiO3:Ce/YBa2Cu3O7-x Bilayer Structure on SrTiO3(100) by Pulsed Laser Deposition." Modern Physics Letters B 11, no. 02n03 (January 30, 1997): 73–79. http://dx.doi.org/10.1142/s0217984997000116.

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c-axis-oriented BaTiO 3 :Ce/YBa 2 Cu 3 O 7-x bilayers have been epitaxially grown on the SrTiO 3(100) substrates by pulsed laser deposition. The crystal structure and epitaxial orientation of the films have been analyzed by the XRD θ/2θ, ω and ϕ scans, and the results indicate that the bilayer thin films have high degree of c-axis-oriented epitaxial crystalline structure. The surface morphology of the thin films was revealed by scanning electron microscopy (SEM). The ferroelectricity of the BaTiO 3 :Ce thin films was verified by the P-E hysteresis loop.
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11

Chrysler, M., J. C. Jiang, G. Lorkowski, E. I. Meletis, and J. H. Ngai. "Deposition-last lithographically defined epitaxial complex oxide devices on Si(100)." Journal of Vacuum Science & Technology A 40, no. 5 (September 2022): 052701. http://dx.doi.org/10.1116/6.0001939.

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The epitaxial growth of SrTiO3 on Si(100) substrates that have been lithographically patterned to realize deposition-last, lithographically defined oxide devices on Si is explored. In contrast to traditional deposition-last techniques which create a physical hard mask on top of the substrate prior to epitaxial growth, a pseudomask is instead created by texturing the Si substrate surface itself. The Si is textured through a combination of reactive ion etching and wet-etching using a tetramethylammonium hydroxide solution. Desorbing the native SiOx at high temperatures prior to epitaxial growth in ultrahigh vacuum presents no complications as the patterned substrate is comprised entirely of Si. The inverted profile in which the epitaxial oxide device layer is above the textured pseudomask circumvents shadowing during deposition associated with conventional hard masks, thereby opening a pathway for highly scaled devices to be created.
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12

Lee, Sang B., and Taegwen Hwangbo. "Epitaxial growth with impurity dimer deposition." Physica A: Statistical Mechanics and its Applications 337, no. 3-4 (June 2004): 470–80. http://dx.doi.org/10.1016/j.physa.2004.02.003.

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13

Mieno, Fumitake, Atsuhiro Tukune, Hiroshi Miyata, Atsuo Shimizu, and Yuji Furumura. "Spontaneous Polysilicon and Epitaxial Silicon Deposition." Journal of The Electrochemical Society 142, no. 5 (May 1, 1995): 1590–94. http://dx.doi.org/10.1149/1.2048618.

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14

Veneroni, Alessandro, Fabrizio Omarini, Davide Moscatelli, Maurizio Masi, Stefano Leone, Marco Mauceri, Giuseppe Pistone, and Giuseppe Abbondanza. "Modeling of epitaxial silicon carbide deposition." Journal of Crystal Growth 275, no. 1-2 (February 2005): e295-e300. http://dx.doi.org/10.1016/j.jcrysgro.2004.10.104.

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15

Jiménez-Sáez, J. C., A. M. C. Pérez-Martín, and J. J. Jiménez-Rodríguez. "Influence of Energy and Temperature in Cluster Coalescence Induced by Deposition." Advances in Condensed Matter Physics 2012 (2012): 1–7. http://dx.doi.org/10.1155/2012/812463.

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Coalescence induced by deposition of different Cu clusters on an epitaxial Co cluster supported on a Cu(001) substrate is studied by constant-temperature molecular dynamics simulations. The degree of epitaxy of the final system increases with increasing separation between the centres of mass of the projectile and target clusters during the collision. Structure, roughness, and epitaxial order of the supported cluster also influence the degree of epitaxy. The effect of energy and temperature is determinant on the epitaxial condition of the coalesced cluster, especially both factors modify the generation, growth and interaction among grains. A higher temperature favours the epitaxial growth for low impact parameters. A higher energy contributes to the epitaxial coalescence for any initial separation between the projectile and target clusters. The influence of projectile energy is notably greater than the influence of temperature since higher energies allow greater and instantaneous atomic reorganizations, so that the number of arisen grains just after the collision becomes smaller. The appearance of grain boundary dislocations is, therefore, a decisive factor in the epitaxial growth of the coalesced cluster.
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16

Arata, Yuta, Hiroyuki Nishinaka, Kazuki Shimazoe, and Masahiro Yoshimoto. "Epitaxial Growth of Bendable Cubic NiO and In2O3 Thin Films on Synthetic Mica for p- and n-type Wide-Bandgap Semiconductor Oxides." MRS Advances 5, no. 31-32 (2020): 1671–79. http://dx.doi.org/10.1557/adv.2020.85.

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AbstractBendable p-type NiO and n-type In2O3 thin films were epitaxially grown on synthetic mica using mist chemical vapor deposition. It was found that at a growth temperature of 400 °C, epitaxially grown cubic (111) NiO thin films developed twin rotational domains, and the epitaxial relationship between each domain and the substrate was (111) NiO [1-10] or [10-1] || (001) synthetic mica [100]. In the visible light region, the epitaxial NiO thin films showed high transparencies, and their cut-offs appeared in the UV region. Additionally, at a growth temperature of 500 °C, cubic (111) In2O3 thin films with and without Sn doping were epitaxially grown on synthetic mica. As a result of the plasma oscillation of free carriers, Sn-doped In2O3 thin films exhibited reflection characteristics in the infrared region, while maintaining their visible light transmission characteristics. Furthermore, compared with non-doped In2O3, Sn doping decreased the sheet resistance by two digits.
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17

Komatsu, Keiji, Pineda Marulanda David Alonso, Nozomi Kobayashi, Ikumi Toda, Shigeo Ohshio, Hiroyuki Muramatsu, and Hidetoshi Saitoh. "Epitaxial Growth of Magnesia Films on Single Crystalline Magnesia Substrates by Atmospheric-Pressure Chemical Vapor Deposition." Journal of Materials Science Research 5, no. 2 (January 31, 2016): 56. http://dx.doi.org/10.5539/jmsr.v5n2p56.

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<p class="1Body">MgO films were epitaxially grown on single crystal MgO substrates by atmospheric-pressure chemical vapor deposition (CVD). Reciprocal lattice mappings and X-ray reflection pole figures were used to evaluate the crystal quality of the synthesized films and their epitaxial relation to their respective substrates. The X-ray diffraction profiles indicated that the substrates were oriented out-of-plane during MgO crystal growth. Subsequent pole figure measurements showed how all the MgO films retained the substrate in-plane orientations by expressing the same pole arrangements. The reciprocal lattice mappings indicated that the whisker film showed a relatively strong streak while the continuous film showed a weak one. Hence, highly crystalline epitaxial MgO thin films were synthesized on single crystal MgO substrates by atmospheric-pressure CVD.</p>
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18

Ohnishi, T., B. T. Hang, X. Xu, M. Osada, and K. Takada. "Quality control of epitaxial LiCoO2 thin films grown by pulsed laser deposition." Journal of Materials Research 25, no. 10 (October 2010): 1886–89. http://dx.doi.org/10.1557/jmr.2010.0250.

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Thin films of c-axis-oriented LiCoO2 were epitaxially grown by pulsed laser deposition (PLD). The ablation laser conditions greatly affect the crystal quality of the epitaxial LiCoO2 thin films. In addition, high-quality LiCoO2 thin films were found to grow without any impurity phases under relatively low oxygen partial pressure, although high pressure had been often selected to suppress the formation of Co3O4 with a lower valence state as an impurity. This result clearly indicates that the ablation laser conditions are an essential growth parameter, and that composition control is indispensable to grow high-quality complex compound thin films by PLD.
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19

LIANG, M. H., X. XIE, and S. LI. "COMPUTER SIMULATION OF EPITAXIAL GROWTH OF SILICON ON Si (001) SURFACE." International Journal of Modern Physics B 16, no. 01n02 (January 20, 2002): 227–32. http://dx.doi.org/10.1142/s0217979202009688.

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Epitaxial growth of silicon on Si (001) surface has been studied with interatomic potential based molecular dynamics simulation method. Three silicon interatomic potentials developed separately by Stillinger-Weber, Tersoff, and Bazant-Kaxiras were used. Energetic beam of 8 eV, substrate temperature of 500K and deposition rate of 1.15 ps/atom were used as the deposition conditions. Morphologies of the growth were obtained and densities in the growth direction analyzed. Epitaxial growth under the deposition conditions imposed was found possible only using the Stillinger-Weber potential. Disordered growths of differing degree were obtained using the Bazant-Kaxiras and Tersoff potentials. The disordered growth may be attributed to the existence of an epitaxial transition temperature higher than 500K that these potentials might have.
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20

Tamaki, Jun, Gregory K. L. Goh, and Fred F. Lange. "Novel epitaxial growth of barium titanate thin films by electrodeposition." Journal of Materials Research 15, no. 12 (December 2000): 2583–86. http://dx.doi.org/10.1557/jmr.2000.0368.

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Electrodeposition was used to grow epitaxially BaTiO3 thin films on SrTiO3 single-crystal substrates with La0.7Sr0.3MnO3 (LSMO) conducting buffer layers. The epitaxial films appeared to consist of very small (ø10 nm) particles. The film completely covered the substrate when the reaction was performed at temperatures between 60 and 90 °C with LSMO potentials of –0.5 to –1.0 V against a Pt counter-electrode. It appeared that an electrophoretic force, acting on BaTiO3 nuclei within the solution, facilitated the deposition of the film.
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21

Alouach, H., and G. J. Mankey. "Epitaxial growth of copper nanowire arrays grown on H-terminated Si(110) using glancing-angle deposition." Journal of Materials Research 19, no. 12 (December 1, 2004): 3620–25. http://dx.doi.org/10.1557/jmr.2004.0465.

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We report the growth of epitaxial nanowire arrays using the technique of glancing- angle deposition with substrate rotation. Epitaxial copper nanowire arrays were deposited on H-terminated Si(110) using electron beam evaporation. The nanowire arrays were characterized by x-ray diffraction, atomic force microscopy, and scanning electron microscopy. Individual nanowires were confirmed to be single crystalline by examination with transmission electron microscopy. The epitaxial growth involves twin formation with the epitaxial orientation relationships: Cu(111)//Si(110) with Cu[110]//Si[001] and Cu[110//Si[001] for each of the twins. As the angle of incidence is increased, Cu grows as isolated columns with a spacing that increases as the angle of incidence is increased. However, the thickness limit for epitaxial growth is reduced as the angle of incidence is increased, and it is reduced to approximately 300 nm for a deposition angle of 75°. The x-ray rocking curves for samples deposited at increasing polar angles show steadily improving crystal orientation up to a deposition angle of about 35°. Beyond 65° deposition angle, the rocking curves show significantly sharper split diffraction peaks indicating that there are distinct orientations. In addition, the split peaks have a much lower full width at half maximum. The observed behavior is explained based on arguments involving unidirectional diffusion arising from adatom parallel momentum.
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22

Meinander, K., K. Nordlund, and J. Keinonen. "Size dependent epitaxial cluster deposition: The effect of deposition energy." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 242, no. 1-2 (January 2006): 161–63. http://dx.doi.org/10.1016/j.nimb.2005.08.028.

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23

NECHACHE, R., C. HARNAGEA, A. RUEDIGER, F. ROSEI, and A. PIGNOLET. "EFFECT OF EPITAXIAL STRAIN ON THE STRUCTURAL AND FERROELECTRIC PROPERTIES OF Bi2FeCrO6 THIN FILMS." Functional Materials Letters 03, no. 01 (March 2010): 83–88. http://dx.doi.org/10.1142/s1793604710000981.

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Bi 2 FeCrO 6 thin films were epitaxially grown by pulsed laser deposition on (100)-oriented LaAlO 3, ( LaAlO 3)0.3( Sr 2 LaTaO 6)0.7 and SrTiO 3 single crystalline substrates with and without epitaxial CaRuO 3 buffered layer. The in-plane compressive strain induces monoclinic distortion of the Bi 2 FeCrO 6 lattice cell. The strain originates from lattice mismatch between CaRuO 3 and single crystal substrates. The similar crystal structure of the substrate and the layer lead to coherent epitaxial growth of the heterostructures and avoid strain relaxation in particular for BFCO films deposited on LaAlO 3 substrates. The ferroelectric character is demonstrated for all grown BFCO films. The residual in-plane strain weakly affects the effective piezoelectric coefficient of BFCO layers.
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24

Kizuka, T., and N. Tanaka. "Cross-sectional time-resolved high-resolution electron microscopy of epitaxial growth of Au on MgO." Proceedings, annual meeting, Electron Microscopy Society of America 54 (August 11, 1996): 982–83. http://dx.doi.org/10.1017/s0424820100167378.

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Vapor phase epitaxial growth techniques are indispensable for production of thin film electric devices. Various structural analyses have been attempted to evaluate the epitaxial growth. Conventional transmission electron microscopy (CTEM) is a most useful method. In particular, it is known that a plan-view time-resolved CTEM of in-situ vacuum-deposition in a microscope can analyze each process of epitaxial growth. The nucleation in vacuum-deposition was also in-situ observed by a time-resolved high resolution electron microscopy (TRHREM). However many unresolved problems still remain in the studies of the epitaxial growth because it is difficult to observe the epitaxial interfaces less than a few nanometer under appropriate conditions. Much more advanced techniques are required for electron microscopy to obtain detailed information.In the present study, a TRHREM for the cross-sectional observation was developed to elucidate the epitaxial growth process in vacuum-deposition.Gold (Au) was vacuum-deposited on (001) surfaces of the magnesium oxide (MgO) substrates at room temperature in a specimen chamber of a 200-kV high-resolution electron microscope (JEOL, JEM2010).
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25

Tsuchiya, Tetsuo, Kais Daoudi, Tomohiko Nakajima, and Toshiya Kumagai. "Epitaxial Growth of LSMO Film Prepared by Excimer Laser-Assisted Metal Organic Deposition (ELAMOD)." Key Engineering Materials 388 (September 2008): 133–36. http://dx.doi.org/10.4028/www.scientific.net/kem.388.133.

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The La1-xAxMnO3 (A=Sr, Ca, Ba) film was prepared by excimaer laser-assisted metal organic deposition (ELAMOD). To understand the important controlling factor of the epitaxial growth using ELAMOD, the effects of the substrate temperature, substrate type, wavelength, and film thickness on the epitaxial growth were investigated. When the film thickness was 200nm with heating at 250°C, a polycrystalline LSMO film was formed on the LAO substrate. On the other hand, at 80nm, an epitaxial LSMO film was formed on the LAO substrate at 500°C. The epitaxial growth of the LSMO film was found to be dependent on the substrate materials and the laser wavelength. The formation of the epitaxial and polycrystalline LSMO films was discussed
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26

Binh, Nguyen Thanh, Vu Thi Bich, and Y. Segawa. "INVESTIGATION OF ZnO NANO STRUCTURES FABRICATED ON AL2O3 SUBSTRACTES BY MOCVD." ASEAN Journal on Science and Technology for Development 24, no. 1&2 (November 15, 2017): 171–76. http://dx.doi.org/10.29037/ajstd.204.

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High quality ZnO nanostructures were grown directly on sapphire subtracts by metal organic vapor deposition. By changing the growth conditions, the different nano structures (nanorods,nanotubes, nanowalls, nanonetworks) can be selectively. These nanostructures were all epitaxially grown and had the same epitaxial relationship with respect to the substrate. Mechanisms corresponding to different nanostructures were discussed. The nanostructures exhibited stable excitonic states at room temperature, and the emission due to exciton-exciton scattering was observed
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27

Blaauw, C., C. Miner, B. Emmerstorfer, A. J. Springthorpe, and M. Gallant. "Metalorganic chemical-vapour-deposition growth and characterization of GaAs." Canadian Journal of Physics 63, no. 6 (June 1, 1985): 664–69. http://dx.doi.org/10.1139/p85-102.

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GaAs epitaxial layers have been grown on semi-insulating GaAs substrates using the technique of metalorganic chemical-vapour deposition. The organometallic compounds trimethylgallium and trimethylgallium–trimethylarsenic adduct were used as source reagents for gallium, whereas arsine and trimethylarsenic were used as sources for arsenic. Photoluminescence measurements at 8 K indicated that carbon was present in the layers as the dominant background acceptor, in most cases, and to a lesser extent copper (Cu) and manganese (Mn) acceptors were also present. Secondary-ion mass spectroscopy (SIMS) analysis confirmed the presence of these acceptors. Silicon was also identified by SIMS in most layers. The concentration of Cu and Mn was correlated with the starting substrate and with the deposition parameters (growth rate, deposition temperature). It was also found that their concentration in the epitaxial layers could be reduced by a careful heat-treatment and chemical etch prior to epitaxial growth.
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28

Ahn, Kun Ho, Sunggi Baik, and Sang Sub Kim. "Change of growth orientation in Pt films epitaxially grown on MgO(001) substrates by sputtering." Journal of Materials Research 17, no. 9 (September 2002): 2334–38. http://dx.doi.org/10.1557/jmr.2002.0342.

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A drastic change of the growth orientation in epitaxial Pt films grown by sputtering on MgO(001) was observed. At higher substrate temperatures, practically pure (001) epitaxial Pt films grow. On the other hand, epitaxial (111) Pt films grow at lower substrate temperatures. Interestingly, the gradual transition from (111) to (001) orientation occurs at lower temperatures when applied at a lower deposition rate. The degree of supersaturation in growth conditions is proposed as a key driver of the orientation change. When homogeneous nucleation occurs under a higher supersaturation, a large number of nuclei grow at the flat (001) terraces possessing (111) tetrahedral orientation. Under a lower supersaturation, a small number of nuclei aligned in (001) orientation to each other form dominantly at surface defects, resulting in a (001) epitaxial film with no grains. Our results suggest that one can selectively prepare either (001) or (111) epitaxial Pt films by properly adjusting substrate temperature and/or deposition rate.
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29

Le, Ha-Linh Thi, Fatme Jardali, and Holger Vach. "Deposition of hydrogenated silicon clusters for efficient epitaxial growth." Physical Chemistry Chemical Physics 20, no. 23 (2018): 15626–34. http://dx.doi.org/10.1039/c8cp00764k.

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Epitaxial silicon thin films grown from the deposition of plasma-born hydrogenated silicon nanoparticles using plasma-enhanced chemical vapor deposition have widely been investigated due to their potential applications in photovoltaic and nanoelectronic device technologies. Here, molecular dynamics simulations are presented to predict the optimal deposition conditions.
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30

Resel, Roland, Markus Koini, Jiri Novak, Steven Berkebile, Georg Koller, and Michael Ramsey. "Epitaxial Order Driven by Surface Corrugation: Quinquephenyl Crystals on a Cu(110)-(2×1)O Surface." Crystals 9, no. 7 (July 22, 2019): 373. http://dx.doi.org/10.3390/cryst9070373.

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A 30 nm thick quinquephenyl (5P) film was grown by molecular beam deposition on a Cu(110)(2×1)O single crystal surface. The thin film morphology was studied by light microscopy and atomic force microscopy and the crystallographic structure of the thin film was investigated by X-ray diffraction methods. The 5P molecules crystallise epitaxially with (201)5P parallel to the substrate surface (110)Cu and with their long molecular axes parallel to [001]Cu. The observed epitaxial alignment cannot be explained by lattice matching calculations. Although a clear minimum in the lattice misfit exists, it is not adapted by the epitaxial growth of 5P crystals. Instead the formation of epitaxially oriented crystallites is determined by atomic corrugations of the substrate surface, such that the initially adsorbed 5P molecules fill with its rod-like shape the periodic grooves of the substrate. Subsequent crystal growth follows the orientation and alignment of the molecules taken within the initial growth stage.
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31

Hanawa, T., N. Kikuchi, K. Nishio, K. Tonooka, R. Wang, and T. Mamiya. "Epitaxial Growth of (Na,K)NbO3 based materials on SrTiO3 by pulsed laser deposition." MRS Proceedings 1633 (2014): 19–24. http://dx.doi.org/10.1557/opl.2014.84.

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ABSTRACTLead-free, piezoelectric (Na,K)NbO3-BaZrO3-(Bi,Li)TiO3 films were epitaxially grown onto (100) SrTiO3 substrate via pulsed laser deposition. The effects of post-annealing temperature on the crystal phases, mosaic spread, and chemical composition of the deposited (Na,K)NbO3 and (Na,K)NbO3-BaZrO3-(Bi,Li)TiO3 films were analyzed. Results indicate the epitaxial growth of (Na,K)NbO3-BaZrO3-(Bi,Li)TiO3 films deposited at an oxygen pressure (PO2) of ≥40 Pa and substrate temperature (Ts) of 800°C. The alkaline-deficiency could be suppressed in the (Na,K)NbO3-BaZrO3-(Bi,Li)TiO3 films deposited at PO2 ≥ 70 Pa. AFM profile of the (Na,K)NbO3 post-annealed at 1000°C indicates the epitaxial growth of film with atomically flat step-terrace structure, while that of the (Na,K)NbO3-BaZrO3-(Bi,Li)TiO3 film post-annealed at 1200°C shows relatively smooth surface with step-terrace structure and several cubic crystals. It was also found that the preferential evaporation of alkaline components could be suppressed by annealing under covered substrate condition.
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32

Wang, Wenliang, Yulin Zheng, Xiuye Zhang, Yuan Li, Zhenya Lu, and Guoqiang Li. "Design and epitaxial growth of quality-enhanced crack-free GaN films on AlN/Al heterostructures and their nucleation mechanism." CrystEngComm 20, no. 5 (2018): 597–607. http://dx.doi.org/10.1039/c7ce01995e.

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The epitaxial structures of GaN films grown on AlN/Al heterostructures by pulsed laser deposition (PLD) are designed with and without an amorphous AlN layer, and quality-enhanced crack-free GaN epitaxial films are obtained.
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33

Bai, P., G.-R. Yang, L. You, T.-M. Lu, and D. B. Knorr. "Room-temperature epitaxy of Cu on Si(111) using partially ionized beam deposition." Journal of Materials Research 5, no. 5 (May 1990): 989–97. http://dx.doi.org/10.1557/jmr.1990.0989.

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The epitaxial growth of Cu on Si(111) substrate at room temperature was achieved using the Partially Ionized Beam (PIB) deposition technique in a conventional (10−4 Pa) vacuum without prior in situ cleaning of the substrate or post-annealing of the film. The beam contained ≍2% of Cu self-ions, and a bias of 0 to 4.2 kV was applied to the substrate during deposition. X-ray diffraction studies showed the existence of a twin structure in the epitaxial Cu layer deposited at 1 kV. A mechanism of epitaxial growth of Cu(111) on Si(111) substrate via an η″—Cu3Si intermediate phase is proposed. Based on the crystal structure of η″—Cu3Si, it is demonstrated that the geometrical lattice matching concept provides a simple picture of lattice continuity at the interface in this epitaxial system.
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34

Shtepliuk, Ivan, Mikhail Vagin, and Rositsa Yakimova. "Electrochemical Deposition of Copper on Epitaxial Graphene." Applied Sciences 10, no. 4 (February 19, 2020): 1405. http://dx.doi.org/10.3390/app10041405.

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Understanding the mechanism of metal electrodeposition on graphene as the simplest building block of all graphitic materials is important for electrocatalysis and the creation of metal contacts in electronics. The present work investigates copper electrodeposition onto epitaxial graphene on 4H-SiC by experimental and computational techniques. The two subsequent single-electron transfer steps were coherently quantified by electrochemistry and density functional theory (DFT). The kinetic measurements revealed the instantaneous nucleation mechanism of copper (Cu) electrodeposition, controlled by the convergent diffusion of reactant to the limited number of nucleation sites. Cu can freely migrate across the electrode surface. These findings provide fundamental insights into the nature of copper reduction and nucleation mechanisms and can be used as a starting point for performing more sophisticated investigations and developing real applications.
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35

Agostinelli, John A., Gabriel H. Braunstein, and Thomas N. Blanton. "Epitaxial LiTaO3thin films by pulsed laser deposition." Applied Physics Letters 63, no. 2 (July 12, 1993): 123–25. http://dx.doi.org/10.1063/1.110374.

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36

Seo, Jikeun, Hye-Young Kim, and J.-S. Kim. "Effects of deposition dynamics on epitaxial growth." Journal of Physics: Condensed Matter 19, no. 48 (November 5, 2007): 486001. http://dx.doi.org/10.1088/0953-8984/19/48/486001.

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37

Zou, Guifu, Haiyan Wang, Nathan Mara, Hongmei Luo, Nan Li, Zengfeng Di, Eve Bauer, et al. "Chemical Solution Deposition of Epitaxial Carbide Films." Journal of the American Chemical Society 132, no. 8 (March 3, 2010): 2516–17. http://dx.doi.org/10.1021/ja9102315.

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38

Yamada, Isao. "Effects of Ionized Cluster Beam Bombardment on Epitaxial Metal Film Deposition on Silicon Substrates." MRS Proceedings 128 (1988). http://dx.doi.org/10.1557/proc-128-113.

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ABSTRACTThe effects of ion beam bombardment during ionized cluster beam (ICB) deposition of metal films on Si(111) and Si(100) substrates have been discussed. In the case of Al deposition, films have been epitaxially deposited on Si(lll) and Si(100) substrates at near room temperature. On Si(111) substrates, nearly perfect Al single crystal films could be formed. On Si(100) substrates, Al bicrystals have been grown epitaxially. A remarkable fact concerning these results is that the epitaxial films could be formed at nearly room temperature and on a large lattice mismatch (25%) substrate surface. Atomic resolution TEM analysis suggests that the epitaxy of Al occurs not only on Si surfaces but also at Al/Al grain boundaries. These epitaxial films exhibit extremely high thermal stability and long electromigration life time. To understand the deposition features and film characteristics, the effects of ICB bombardment on the film growth at the initial stage of the deposition and the resultant film structure have been studied. The results show that the role of very low energy ion bombardment is especially important in forming epitaxial metal films. Depositions of Au and Cu on Si substrates have also been made to understand whether ICB deposition may improve the characteristics of other metal films. Preliminary results of these film depositions are also obtained.
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39

Kawai, Masanori, Daisuke Kan, Seiichi Isojima, Hiroki Kurata, Seiji Isoda, Shigeru Kimura, Osami Sakata, and Yuichi Shimakawa. "Deposition Rate Effect on Critical Thickness of BaTiO3 Epitaxial Thin Film Grown on SrTiO3 (001)." MRS Proceedings 1034 (2007). http://dx.doi.org/10.1557/proc-1034-k10-04.

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AbstractBaTiO3/SrTiO3(001) epitaxial thin films were prepared at various growth rates by pulsed laser deposition, and their heterostructures were evaluated by synchrotron x-ray diffraction measurements and cross-sectional scanning transmission electron microscopy observations. In a film grown at a low deposition rate (0.01 nm/s), misfit dislocations are found near the interface and a fully relaxed BaTiO3 thin film grows epitaxially on the substrate. On the other hand, a film grown at a high deposition rate (0.04 nm/s) consists of strained and relaxed BaTiO3 lattices. Our results showed that the critical thickness of BaTiO3/SrTiO3(001) epitaxial thin films can be controlled by the deposition rate and that the critical thickness increases with increasing the deposition rate, and by adjusting the deposition rate we were able to prepare epitaxial thin films consisting of fully strained BaTiO3, partially strained BaTiO3 or fully relaxed BaTiO3. We have also achieved the growth controlling of BaTiO3 thin films on SrTiO3(001) substrates with SrRuO3 bottom electrode layer.
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40

Palmstrom, C. J., G. J. Galvin, S. A. Schwarz, B. C. De Cooman, and J. W. Mayer. "SOLID PHASE EPITAXIAL GROWTH OF Ge ON GaAs." MRS Proceedings 56 (1985). http://dx.doi.org/10.1557/proc-56-67.

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AbstractSolid phase epitaxial growth of electron beam evaporated Ge layers on unheated GaAs has been demonstrated. The amorphous Ge layers grow epitaxially on the GaAs surface during anneals at 400°C. A technique for growing these epitaxial layers without the need for in-situ heat treatment of the GaAs prior to Ge deposition is described.
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41

Lu, P., S. He, F. X. Li, and Q. X. Jia. "Epitaxial and Conductive RuO2 Thin Films Grown on MgO and LaAlO3 by MOCVD." MRS Proceedings 541 (1998). http://dx.doi.org/10.1557/proc-541-147.

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AbstractConductive RuO2 thin films have been grown epitaxially on (100) MgO and (100) LaAlO3 substrates by metal-organic chemical vapor deposition(MOCVD) at different temperatures. The microstructural properties of the RuO2 films have been studied using x-ray diffraction and scanning electron microscopy. Different growth and microstructure properties were observed for the films deposited on the two substrates. The films on MgO are epitaxial at deposition temperatures as low as 350°C, and consist of two variants with an orientation relationship given by (110) RuO2 /(100) MgO and [001] RuO2//[011]MgO. The films on LaAlO3, on the other hand, are epitaxial only at deposition temperatures of 600°C and above, and contain four variants with an orientation relationship given by (200)RuO2//(100)LaAlO3 and [011] RuO2//[011] LaAlO3. The observed microstructures of epitaxially grown films can be explained based on geometric considerations for the films and substrates.
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42

Hattori, Y., A. Mizoguchi, Y. Ogaki, and A. Nishimtjra. "Epitaxial Growth of Organic Nonlinear Optical Materials." MRS Proceedings 247 (1992). http://dx.doi.org/10.1557/proc-247-235.

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ABSTRACTAs an orientation control technique for organic materials, epitaxial growth on crystal substrates was studied for DBNA, a derivative of p-nitroani1 ine, and polydiacetylene(PDA)-3BCMU using Vacuum Deposition and Molecular Beam Epitaxy(MBE).The thin film of DBNA was epitaxially grown on a KCl(001) surface by Vacuum Deposition. Molecular orientation to the substrate (parallel or normal) was controlled by MBE. PDA-3BCMTJ thin films were prepared by UV light irradiation of DA-3BCMU(monomer) thin films which were epitaxially grown on a KCl(001) surface, x(3) values of this oriented thin film were larger than those of unoriented spin-casted thin film.
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43

Teplin, Charles W., Matthew Page, Eugene Iwaniczko, Kim M. Jones, Robert M. Ready, Bobby M. To, Helio M. Moutinho, Qi M. Wang, and Howard M. Branz. "Roughness, impurities and strain in low-temperature epitaxial silicon films grown by tantalum filament hot-wire chemical vapor deposition." MRS Proceedings 910 (2006). http://dx.doi.org/10.1557/proc-0910-a15-01.

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AbstractWe grow epitaxial silicon films onto (100) silicon wafers from pure silane by hot-wire chemical vapor deposition (HWCVD). The films grow epitaxially for a thickness hepi before a Si:H cones nucleate and expand. We study the dependence of hepi on growth rate and the differences between Ta and W filaments. The surface morphology of thin but completely epitaxial films are studied in order to correlate the surface roughness during growth with the eventual epitaxial breakdown thickness. Surface roughness, strain and H at the wafer/film interface are not likely to cause the observed breakdown.
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44

Rulder, R. A., G. G. Fountain, S. V. Hattangady, J. B. Posthill, and R. J. Markunas. "Development of Remote Plasma Enhanced Ohemical Vapor Deposition Processes Through the use of in Vacuo Electron Diffraction and Electron Spectroscopy." MRS Proceedings 165 (1989). http://dx.doi.org/10.1557/proc-165-151.

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AbstractRemote plasma enhancecd chemical vapor deposition techniques have been developed for a wide variety of processes. These include SiO2, Si3N4, Si, Ge, GaN, GaAs, and a-Si:H depositions. This development has been enabled through the use of electron diffraction and electron spectroscopy techniques. These techniques have been used to qualify cleaning procedures prior to epitaxial or dielectric depositions. They have beeii used to qualify epitaxial deposition conditions by defining suitable.temperature and rate conditions. And, they have been used to evaluate cross-contamination issues. In situ techniques have been used in conjunction with ex situ characterizations to identify and correct problems in wafer cleaning, epitaxy, and process integration.
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45

Lee, See-Hyung, T. W. Noh, and Jai-Hyung Lee. "Dependence of Electro-Optic Effects on the Orientations of Epitaxial LiNbO3 Films." MRS Proceedings 401 (1995). http://dx.doi.org/10.1557/proc-401-261.

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AbstractEpitaxial LiNbO3 films were grown on a-cut sapphire, i.e., α-A12O3(0112), substrates by pulsed laser deposition. It is found the oxygen pressure is an important deposition parameter to influence the orientations of the LiNbO3 films. At an oxygen pressure of 10−1 torr, LiNbO3(0001) film was grown epitaxially. And, at a low oxygen pressure (i.e., 5x10−4 torr), LiNbO3(1120) film was grown epitaxially. Due to the anisotropic electro-optic (EO) constants, these films with the different orientations display large differences in their EO properties: the epitaxial LiNb3(0001) film shows little EO effects, but the LiNbO3(1120) film shows a large quadratic EO behavior with an effective coefficient of 2.38×10−5 m2/V2. The dependence of EO effects on the orientations of the epitaxial films was analyzed in terms of the linear and quadratic EO tensors of LiNbO3.
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46

Oberbeck, Lars, Thomas A. Wagner, and Ralf B. Bergmann. "Ion-Assisted Deposition of Silicon Epitaxial Films with High Deposition Rate Using Low Energy Silicon Ions." MRS Proceedings 609 (2000). http://dx.doi.org/10.1557/proc-609-a7.1.

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ABSTRACTIon-assisted deposition (IAD) enables low temperature (≥ 435°C), high-rate (≤ 0.5 μm/min) epitaxial growth of silicon films. Therefore, IAD is an interesting deposition technique for microelectronic devices and thin film solar cells. The Hall-mobility of monocrystalline epitaxial layers increases with deposition temperature Tdep and reaches values comparable to those of bulk Si at Tdep ≥ 540°C. Polycrystalline epitaxial layers exhibit inhomogeneous electrical properties, as shown by Light Beam Induced Current measurements. Recombination within the grains dominates over recombination at grain boundaries. Secco etching identifies an inhomogeneous density of extended structural defects in the polycrystalline epitaxial layers and in the substrate. A major part of the extended defects in the epitaxial layers originates from defects in the substrate.
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47

Nashimoto, K., D. K. Fork, F. A. Ponce, and T. H. Geballe. "Epitaxial Growth of Ferroelectric Thin Films on GaAs with MgO Buffer Layers by Pulsed Laser Deposition." MRS Proceedings 243 (1991). http://dx.doi.org/10.1557/proc-243-495.

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AbstractEpitaxial growth of ferroelectric thin films on GaAs (100) by pulsed laser deposition was examined for integrated electro-optic device applications. To promote epitaxy of ferroelectrics and prevent interdiffusion, we have deposited several types of buffer layers. CeO2 reacted strongly with GaAs. Although Y203 9% stabilized-ZrO2 films showed epitaxial growth, YSZ reacted with GaAs at 780°C. MgO grew epitaxially and was stable even at 780°C. HRTEM observation showed a sharp interface between MgO and GaAs. BaTiO3 and SrTiO3 deposited on MgO/GaAs structures showed epitaxial growth. In-plane orientation was BaTiO3 [100 // MgO [100] // GaAs [100]. Epitaxial BaTiO3 films were c-axis oriented tetragonal phase and showed ferroelectric hysteresis.
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48

Martin Smith, Paul, S. Lombardo, M. J. Uttormark, Stephen J. Cook, and Michael O. Thompson. "Laser Assisted E-Beam Epitaxial Growth of Si/Ge Alloys on Si." MRS Proceedings 202 (1990). http://dx.doi.org/10.1557/proc-202-603.

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ABSTRACTA novel laser-assisted technique for e-beam epitaxial growth of GexSi1−x alloys on <100> Si has been investigated. During deposition, a XeCl excimer laser is used to either heat, or to melt and crystallize, the GexSi1−x continuously as the material is evaporated. This process of heating or melting and crystallizing can be continued until the desired film thickness is achieved. At incident laser energy densities which produce melt, the underlying crystalline seed ensures epitaxial growth during the subsequent solidification. Depositions of films up to 3 at.% Ge under this liquid regime, with substrates held nominally at room temperature, exhibited complete epitaxial growth. At energy densities below the melt threshold, enhanced surface mobility for epitaxial alignment is required. Depositions in this regime exhibit only partial epitaxial growth with conversion to fine grained polycrystalline growth after short distances.
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49

McEachernt, R. L., Dirk Laszig, and W. L. Brownt. "The Epitaxial Growth of Al on Hydrogen Terminated Si(100) Substrates with and Without Ion Bombardment." MRS Proceedings 260 (1992). http://dx.doi.org/10.1557/proc-260-953.

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ABSTRACTWe have demonstrated that aluminum can be grown epitaxially on H-terminated Si(100) substrates under modest vacuum conditions using thermal deposition. The effect of 1 keV to 4 keV ion bombardment during deposition was found to be either minimal or detrimental. Preliminary results from sputter-deposited Al films show very different behavior, with the films tending to relax from the epitaxial (110) texture to a (111) texture.
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50

Higuchi, Takamitsu, Koichi Morozumi, Setsuya Iwashita, Masaya Ishida, and Tatsuya Shimoda. "Fabrication of SrRuO3 Epitaxial Thin Films on YBa2Cu3Ox / CeO2 / YSZ - Buffered Si Substrates by Pulsed Laser Deposition." MRS Proceedings 786 (2003). http://dx.doi.org/10.1557/proc-786-e6.5.

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ABSTRACTPseudocubic SrRuO3 (100) epitaxial thin films were fabricated on Si (100) with a YBa2Cu3Ox / CeO2 / YSZ (yttria-stabilized-zirconia) triple buffer layer ∼ 14 nm thick by pulsed laser deposition (PLD). Reflection high-energy electron diffraction (RHEED) and X-ray diffraction (XRD) revealed that the first buffer layer of YSZ (100) was epitaxially grown on naturally oxidized Si (100) substrates with the process condition of PB (base pressure) = 1×10-Torr, PO2 (oxygen partial pressure) = 5×10- Torr, and Ts (substrate temperature) = 700 °C. Higher deposition rate of YSZ in the range of 0 ∼ 0.6 nm/min brought about better crystallinity with a smaller value of a full-width at half maximum (FWHM) in the YSZ (200) rocking curve. Subsequent deposition of CeO2, YBa2Cu3Ox, and SrRuO3 resulted in an SrRuO3 (100) epitaxial thin film exhibiting good crystallinity with FWHM = 1.7° in the SrRuO3 (200) rocking curve.
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