Academic literature on the topic 'Eoot architecture'

In this paper field effect transistors (FETs) with new materials and new structures are discussed. A thermal robust HfN/HfO 2 gate stack, which can alleviate the confliction between high quality high k material and low EOT, is investigated. EOT of the gate stack can be scaled down to 0.65nm for MOS capacitor and 0.95nm for MOSFET with higher carrier mobility. A new dual metal gate/high k CMOS integration process was demonstrated based on a dummy HfN technique for better high k quality and metal gate integration. Several new double gate FETs are proposed and investigated, including vertical double gate device with an asymmetric graded lightly doped drain (AGLDD) for better short channel behavior, self-aligned electrically separable double gate device for dynamic threshold voltage operation, new 3-D CMOS inverter based on double gate structure and SOI substrate for compact configuration and new full-symmetric DGJFET for 10nm era with greatly relaxed requirement of silicon film thickness and device design simplification.

An innovative treatment for congested urban road networks is the split intersection. Here, a congested two-way–two-way traffic light-controlled intersection is transformed into two lighter intersections. By reducing conflict points and improving travel time, it facilitates smoother flow with less driver delay. We propose a visible light communication system based on Vehicle-to-Vehicle (V2V), Vehicle-to-Infrastructure (V2I) and Infrastructure-to-Vehicle (I2V) communications able to safely manage vehicles crossing through an intersection, leveraging Edge of Things (EoT) facilities. Headlights, street lamps, and traffic signals are used by connected vehicles to communicate with one another and with infrastructure. Through internally installed Driver Agents, an Intersection Manager coordinates traffic flow and interacts with vehicles. For the safe passage of vehicles across intersections, request/response mechanisms and time and space relative pose concepts are used. A virtual scenario is proposed, and a “mesh/cellular” hybrid architecture used. Light signals are emitted by transmitters by encoding, modulating, and converting data. Optical sensors with light-filtering properties are used as receivers and decoders. The VLC request/response concept uplink and downlink communication between the infrastructure and the vehicles is tested. Based on the results, the short-range mesh network provides a secure communication path between street lamp controllers and edge computers through neighbor traffic light controllers that have active cellular connections, as well as peer-to-peer communication, allowing V-VLC ready cars to exchange information.

Hall electron mobility in buried QW InGaAs channels, grown on InP substrates with HfO 2 gate oxide, is analyzed experimentally and theoretically as a function of top barrier thickness and composition, carrier density, and temperature. Temperature slope α in μ ~Tα dependence is changing from α=-1.1 to +1 with the reduction of the top barrier thickness indicating the dominant role of remote Coulomb scattering (RCS) in interface-related contribution to mobility degradation. Insertion of low-k SiO x interface layer formed by oxidation of thin in-situ MBE grown amorphous Si passivation layer has been found to improve the channel mobility, but at the expense of increased EOT. This mobility improvement is also consistent with dominant role of RCS. We were able to a obtain a reasonable match between experiment and simple theory of the RCS assuming the density of charges at the high-k/barrier interface to be in the range of (2-4)×1013 cm-2.

1058 Background: Patients (pts) with HR+ HER2- ABC ultimately develop endocrine resistance. To gain insights into the genetic mechanisms of resistance we performed WES on serial plasma samples from endocrine resistant pts treated on a clinical trial (NCT02448771). Methods: Plasma samples were collected at baseline (n=36), day 1 of cycle 2 (n=33), and at the end of treatment (EOT, n=33). Samples were subjected to ultra-low passage (ULP, 0.19-0.57X) WGS to determine ctDNA tumor fraction (TF) for the selection of samples (TF>0.03) for subsequent WES (193X). Somatic single nucleotide variations, somatic copy number alteration (SCNA), phylogeny, tumor mutational burden, mutational signatures, and germline analyses were performed. Results: All 102 samples underwent successful ULP and 68 WES. Overall, most frequent pathogenic mutations were in ESR1 and PIK3CA. At baseline, 32% of pts had ESR1 mutation and 21% PIK3CA mutation. There was no association between ESR1 mutations and PFS. In contrast, baseline PIK3CA mutations were detected only in pts who did not have a clinical benefit, and were associated with worse PFS compared to pts with wild-type PIK3CA (1.8 vs. 3.9 months, respectively, HR=0.2, 95% CI 0.06-0.6, P=0.0019, log-rank test). Additionally, pts with a baseline truncating mutation, mostly in tumor suppressor genes ( TP53, MEN1, RB1, CDKN1B, NF1, TP53BP1, TP63, SMAD2/4, ARID1A, KMT2C), also had a significantly worse PFS (1.7 vs 3.8 months, HR=0.3, 95% CI 0.1-0.7, P=0.006, log-rank test). At EOT, 20% (4/20) of pts with matched baseline samples had newly acquired mutations that are suggestive of mechanisms of acquired resistance and offer potential therapeutic targets (e.g. ERBB2, PIK3CA). SCNA analysis showed that in all pts there were at least 2 SCNAs in cancer-related driver genes, most common in CCND1 and ELF3. Moreover, in all samples we identified at least 1 SCNA related to a potential mechanism of resistance. To better understand tumor heterogeneity and sub-clonal architecture we performed an evolutionary analysis (sufficient TF≥0.15, available in n=7). Phylogenetic analysis revealed sub-clonal dynamics that could explain the acquisition of resistance in at least three pts (3/7), and identified novel genes which might have role in endocrine resistance (e.g. DCAF13, ZFHX3). Conclusions: Our results demonstrate the feasibility and utility of serial WES in a clinical trial. Serial ctDNA WES and evolutionary studies enabled us to discover novel potential genomic mechanisms of tumor progression, and identified PIK3CA mutations as a candidate biomarker of resistance to the combination of palbociclib and bazedoxifene, which may apply to other next generation endocrine treatments. Clinical trial information: NCT02448771.

At the 90-nm node, the rate of transistor miniaturization slows down due to challenges in overcoming the increased leakage current (Ioff). The invention of high-k/metal gate technology at the 45-nm technology node was an enormous step forward in extending Moore’s Law. The need to satisfy performance requirements and to overcome the limitations of planar bulk transistor to scales below 22 nm led to the development of fully depleted silicon-on-insulator (FDSOI) and fin field-effect transistor (FinFET) technologies. The 28-nm wafer planar process is the most cost-effective, and scaling towards the sub-10 nm technology node involves the complex integration of new materials (Ge, III-V, graphene) and new device architectures. To date, planar transistors still command >50% of the transistor market and applications. This work aims to downscale a planar PMOS to a 14-nm gate length using La2O3 as the high-k dielectric material. The device was virtually fabricated and electrically characterized using SILVACO. Taguchi L9 and L27 were employed to study the process parameters’ variability and interaction effects to optimize the process parameters to achieve the required output. The results obtained from simulation using the SILVACO tool show good agreement with the nominal values of PMOS threshold voltage (Vth) of −0.289 V ± 12.7% and Ioff of less than 10−7 A/µm, as projected by the International Technology Roadmap for Semiconductors (ITRS). Careful control of SiO2 formation at the Si interface and rapid annealing processing are required to achieve La2O3 thermal stability at the target equivalent oxide thickness (EOT). The effects of process variations on Vth, Ion and Ioff were investigated. The improved voltage scaling resulting from the lower Vth value is associated with the increased Ioff due to the improved drain-induced barrier lowering as the gate length decreases. The performance of the 14-nm planar bulk PMOS is comparable to the performance of the FDSOI and FinFET technologies at the same gate length. The comparisons made with ITRS, the International Roadmap for Devices and Systems (IRDS), and the simulated and experimental data show good agreement and thus prove the validity of the developed model for PMOSs. Based on the results demonstrated, planar PMOSs could be a feasible alternative to FDSOI and FinFET in balancing the trade-off between performance and cost in the 14-nm process.

This proposed technique adapts PMIPv6 to the Extended Open-Flow architecture, and this technique is referred to as the Extended Open-Flow Technique of PMIPv6 (EOFT-PMIPv6). This method isolates the versatility capacities from the PMIPv6 segments, for example, the Local Mobility Anchor (LMA) and Mobile Access Gateway (MAG), and recreates the parts to take points of interest of the Open-Flow design. The parts that contain the LMA work set the stream table of the switches situated in the way as the controller of Open-Flow, and as such, the area of the MN is kept up. The entrance switches with the MAG capacities tell the connection of a MN and introduce the portability related motioning of MAG. The fundamental commitments of this proposed strategy are twofold: 1) isolating the control and data planes and 2) reducing handover latency

AbstractHerein, we report a high‐quality gate stack (native HfO2 formed on 2D HfSe2) fabricated via plasma oxidation, realizing an atomically sharp interface with a suppressed interface trap density (Dit ∼ 5×1010 cm−2 eV−1). The chemically converted HfO2 exhibits dielectric constant, κ ∼ 23, resulting in low gate leakage current (∼10−3 A/cm2) at EOT ∼0.5 nm. Density functional calculations indicated that the atomistic mechanism for achieving a high‐quality interface is the possibility of O atoms replacing the Se atoms of the interfacial HfSe2 layer without a substitution energy barrier, allowing layer‐by‐layer oxidation to proceed. The field‐effect‐transistor‐fabricated HfO2/HfSe2 gate stack demonstrated an almost ideal subthreshold slope (SS) of ∼ 61 mV/dec (over four orders of IDS) at room temperature (300 K), along with a high Ion/Ioff ratio of ∼108 and a small hysteresis of ∼ 10 mV. Furthermore, by utilizing a device architecture with separately controlled HfO2/HfSe2 gate stack and channel structures, we fabricated an impact ionization FET that exhibited n‐type steep‐switching characteristics with an SS value of 3.43 mV/dec at room temperature, overcoming the Boltzmann limit. Our results provide a significant step toward the realization of post‐Si semiconducting devices for future energy‐efficient data‐centric computing electronics.This article is protected by copyright. All rights reserved

Introduction: Dystrophic cardiac calcinosis (DCC) is an age-related cardiomyopathy that involves myocardial injury, necrosis, and calcification. The genetic factors contributing to myocardial calcification are complex, and several loci for DCC have been identified. However, only 1 gene, Abcc6, has been cloned and confirmed to regulate DCC. Our current studies were designed to study the genetic architecture of DCC. Methods and Results: Recently, the Diversity Outbred (DO) population was developed from 8 inbred strains of mice. The DO mice are mosaics of 8 progenitor strains: C57BL6/J, A/J, NOD/ShiLtJ, NZO/HiLtJ, WSB/EiJ, CAST/EiJ, PWK/PhJ and 129S1/SvImJ. Our initial studies examined the effects of diet and genetic background on the development of DCC in the 8 progenitor strains. At 24 weeks of age, the hearts of mice from these 8 strains were collected, and a colorimetric assay was used to measure calcium levels in heart tissue. ANOVA tests indicated a significant effect (p < 0.05) of the underlying genetics on DCC. To identify genes and pathways contributing to DCC, we next performed QTL mapping using 300 DO mice. Our QTL mapping analysis was carried out using a genetic model that incorporates reconstructed haplotypes and accounts for population structure. We identify a significant (LOD 7.10) QTL on chromosome 6 (94.7 Mb - 97.3 Mb) associated with DCC. Detailed analysis identified the CAST/EiJ and PWK/PhJ founder alleles as the greatest genetic contributors to the chromosome 6 peak. Myocardial calcification involves a highly regulated process of mineralization similar to osteogenesis, and several of the positional candidates mediate calcification, including: Fam19a4, Fam19a1, Eogt, and Arl6ip5. Conclusions: This data identifies genes that may regulate the mineralization underlying both DCC and osteogenesis. They may yield new therapeutic targets for DCC and serve as indicators of atherosclerosis.

Based on detailed sedimentological analyses of cores, interpretation of well logs and a set of geochemical measurements performed on lacustrine sediments, the palaeoenvironmental evolution and the sedimentary architecture of the Paleogene continental Vistrenque Basin (SE France) have been reconstructed. The analysis of sedimentary archives revealed three main stages of basin infill evolution: 1) a transgressive deep-lake basin (Priabonian-earliest Rupelian) whose sedimentation was dominated by terrigenous gravity-driven deposits during a period of high subsidence rate and fault activity and under a prevailing humid climate; 2) a forced-regressive, evaporative deep lake (early Rupelian) characterized by a drastic reduction in terrigenous supplies and deposition of evaporites in disconnected, compartmentalized sub-basins; 3) an overall long-term normal regressive stage (middle Rupelian to earliest Chattian) of lake infill characterized by an increase in terrigenous supplies and a vertical upward transition from deep-lake gravity-driven deposits to marginal lake and floodplain sedimentation. The onset of lake volume reduction and forced regression during the early Rupelian is recorded by 1) the reworking of marginal lake carbonates into the deep lake areas, 2) the deposition of organic-rich sediments (TOC>10%) coupled with sulphate-reduction processes in the deepest areas of the lake, 3) an important decrease in terrigenous supplies and 4) a long-term increase in δ18O of matrix-supported carbonates. This early Rupelian forced regression of the Vistrenque lacustrine system is interpreted to result from a terrestrial lowering in precipitation in response to global cooling during the Eocene-Oligocene Transition (EOT). The final infill of the Vistrenque lake system (late Rupelian-early Chattian) and the installation of a floodplain occurred in more humid conditions during a stage of decreased activity of the Nîmes Fault, prior to or during an early stage of the Liguro-Provençal rifting.

Une faible disponibilité des macroéléments dans la plupart des sols cultivés limite fortement les rendements des cultures en absence de fertilisation. Une meilleure compréhension de l’adaptation des systèmes racinaires à des sols pauvres en ions nutritifs, et l’exploitation de la diversité génétique existante dans ce domaine, entre espèces et/ou variétés, sont susceptibles de contribuer au développement de nouveaux cultivars et de nouvelles pratiques agronomiques permettant de limiter les intrants de fertilisation chimique coûteux et polluants pour l’environnement. L'architecture du système racinaire et la production des poils absorbants à l'interface racine-sol, sont des déterminants majeurs de la capacité du système racinaire à explorer le sol et prélever les ions nutritifs. A ce jour, aucune méthodologie ne permettait de phénotyper les poils absorbants dans un système racinaire considéré dans sa totalité. Dans le cadre de cette thèse, j’ai développé une méthodologie de phénotypage global, intégratif, des systèmes racinaires, incluant les poils absorbants. Un dispositif original de type rhizobox a été développé, permettant d'acquérir des images à haute résolution, pour lesquelles j'ai mis au point une procédure d'analyse informatisée associant le logiciel libre Ilastik pour la segmentation des images, et les logiciels WinRHIZOTM et ImageJ pour l'analyse de traits globaux caractérisant le développement racinaire. Après validation de la méthodologie, les systèmes racinaires de deux génotypes de blé, un cultivar d’amidonnier (T.t. dicoccum, cv Escandia), ancêtre du blé dur, et une variété de pays de blé dur (T.t. durum, cv Oued Zenati) ont été comparés entre eux et par rapport à leur réponse à une faible disponibilité en phosphate (P), azote (N) ou potassium (K). Chez des plantules âgées de 15 jours (racines de ca. 30 cm de long), les carences en N, P ou K ont affecté différentiellement la croissance des plantes (allocation de la biomasse entre racines et feuilles, et développement préférentiel du système racinaire). Les trois carences se sont révélées entraîner une augmentation de la surface totale du système racinaire, qui s'est elle-même révélée comme résultant principalement d'une augmentation de la surface totale des poils absorbants sur le système racinaire entier (traduisant une augmentation de la densité et/ou longueur des poils sur tout le système). Le taux d'augmentation de la surface totale des poils absorbants était variable entre les deux variétés et selon l’élément limitant, plus fort en condition de carence en N chez l’amidonnier, et de carence en P chez la variété de pays. Toutes les réponses racinaires analysées, incluant ou non les poils absorbants, ont révélé une plus grande plasticité développementale en réponse aux carences nutritives chez la variété ancestrale. Une perspective ouverte par ce travail serait de comparer cette plasticité chez différentes variétés de blé récapitulant la domestication et l'amélioration de cette espèce. En perspective également, je montre que la méthodologie que j'ai développée peut permettre de phénotyper les réponses racinaires à des conditions biotiques (présence de bactéries de type Plant Growth Promoting Rhizobacteria)
Low macroelement availability in most cultivated soils severely limits crop yields in the absence of fertilization. A better understanding of the adaptation of root systems to nutrient-poor soils, and the exploitation of existing genetic diversity in this field, between species and/or varieties, are likely to contribute to the development of new cultivars and new agronomic practices allowing to limit costly and environmentally polluting chemical fertilization inputs. The architecture of the root system and the production of root hairs at the root-soil interface are major determinants of the capacity of the root system to explore the soil and take up nutrient ions. To date, no methodology has been available to phenotype root hairs in a root system considered entirely. In this thesis, I developed a methodology for global, integrative phenotyping of root systems, including root hairs. An original rhizobox-type device was developed, allowing to acquire high resolution images, for which I developed a computerized analysis procedure associating the free software Ilastik for image segmentation, and the softwares WinRHIZOTM and ImageJ for the analysis of global traits characterizing the root development. After validation of the methodology, the root systems of two wheat genotypes, a cultivated emmer wheat cultivar (T.t. dicoccum, cv Escandia), ancestor of durum wheat, and a landrace of durum wheat (T.t. durum, cv Oued Zenati) were compared with each other and with respect to their response to low phosphate (P), nitrogen (N) or potassium (K) availability. In 15-day-old seedlings (roots ca. 30 cm long), N, P or K deficiencies differentially affected plant growth (biomass allocation between roots and leaves, and preferential development of the root system). All three deficiencies were found to result in an increase in the total surface area of the root system, resulting primarily from an increase in the total surface area of root hairs over the entire root system (reflecting an increase in the density and/or length of hairs over the entire system). The rate of increase in total absorptive root hair area was variable between the two varieties and among limiting elements, stronger under N deficiency conditions in the emmer wheat, and P deficiency in the landrace. All the root responses analyzed, including or not the root hairs, revealed a greater developmental plasticity in response to nutrient deficiency in the ancestral variety. A perspective opened by this work would be to compare this plasticity in different wheat varieties recapitulating the domestication and improvement of this species. I also show that the methodology I have developed can be used to phenotype root responses to biotic conditions (presence of Plant Growth Promoting Rhizobacteria)

Microgrids appear as a practical, clean and reliable solution to meet the demand of populations that, for various reasons, do not have access to electricity. The complexity of microgrid systems, requires considerable engineering eort in the design process. To design this type of complex systems, new approaches, methods, concepts and engineering tools are needed. Where, the requirements analysis has a preponderant role to better characterize, understand and specify the application domain and the problem that the microgrids must solve. This work proposes the introduction of a formal analysis of requirements in the life cycle of microgrid systems, using IEC 61850 as a reference architecture. The requirements would be represented in an Object Oriented Requirements Engineering (GORE) approach, using specically visual diagrams based on the KAOS (Keep All Objectives Satised) method, where the operation and control of the network will be formally represented. The requirements analysis is presented using a combined representation that uses the GORE and Petri Nets methodology for dynamic modeling and formal verication. A case study for small communities in the Amazon rainforest is used as a case study for the proposed method.