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Relevant bibliographies by topics / Enhancement Mode HEMTs

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Academic literature on the topic 'Enhancement Mode HEMTs'

Author: Grafiati

Published: 6 September 2023

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Journal articles on the topic "Enhancement Mode HEMTs"

1

Wang, Chih Hao, Liang Yu Su, Finella Lee, and Jian Jang Huang. "Applications of GaN-Based High Electron Mobility Transistors in Large-Size Devices." Applied Mechanics and Materials 764-765 (May 2015): 486–90. http://dx.doi.org/10.4028/www.scientific.net/amm.764-765.486.

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We demonstrate a novel design of large-size device in AlGaN/GaN high-electron-mobility transistor (HEMT). Depletion mode (D-mode) HEMTs and enhancement mode (E-mode) HEMTs are fabricated in our research. The saturation current of D-mode HEMTs is over 6A. By using Cascode structure, the D-mode HEMT becomes a normally-off device efficiently, and the threshold voltage of it rises from-7V to 2V. By using BCB (Benzocyclobutene) as the passivation, the E-mode HEMT shows an excellent characteristic. Also, when the VGS of the E-mode HEMT is over 9V, it still shows a good performance.

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Sohn, Y. J., B. H. Lee, M. Y. Jeong, and Y. H. Jeong. "Enhancement mode Al0.25Ga0.75As/In0.2Ga0.8As nanowire HEMTs." Electronics Letters 37, no. 5 (2001): 322. http://dx.doi.org/10.1049/el:20010208.

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Chvála, Aleš, Lukáš Nagy, Juraj Marek, Juraj Priesol, Daniel Donoval, Alexander Šatka, Michal Blaho, Dagmar Gregušová, and Ján Kuzmík. "Device and Circuit Models of Monolithic InAlN/GaN NAND and NOR Logic Cells Comprising D- and E-Mode HEMTs." Journal of Circuits, Systems and Computers 28, supp01 (December 1, 2019): 1940009. http://dx.doi.org/10.1142/s0218126619400097.

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This paper presents monolithic integrated InAlN/GaN NAND and NOR logic cells comprising depletion-mode, enhancement-mode and dual-gate enhancement-mode high electron mobility transistors (HEMTs). The designed NAND and NOR logic cells consist of the depletion-mode and enhancement-mode HEMT transistors integrated onto a single die. InAlN/GaN-based NAND and NOR logic cells with good static and dynamic performance are demonstrated for the first time. Calibrated static and dynamic electrophysical models are proposed for 2D device simulations in Sentaurus Device environment. Sentaurus Device mixed-mode setup interconnects the transistors to NAND and NOR logic circuits which allows analysis and characterization of the devices as a complex system. Circuit models of depletion-mode, enhancement-mode and dual-gate HEMTs are designed and calibrated by experimental results and 2D device simulations. The proposed models exhibit highly accurate results.

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Zhong, Min, Ying Xi Niu, Hai Ying Cheng, Chen Xi Yan, Zhi Yuan Liu, and Dong Bo Song. "Advances for Enhanced GaN-Based HEMT Devices with p-GaN Gate." Materials Science Forum 1014 (November 2020): 75–85. http://dx.doi.org/10.4028/www.scientific.net/msf.1014.75.

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With the development of high-voltage switches and high-speed RF circuits, the enhancement mode(E-mode) AlGaN/GaN HEMTs have become a hot topic in those fields. The E-mode GaN-based HEMTs have channel current at the positive gate voltage, greatly expanding the device in low power digital circuit applications. The main methods to realize E-mode AlGaN/GaN HEMT power devices are p-GaN gate technology, recessed gate structure, fluoride ion implantation technology and Cascode structure (Cascode). In this paper, the advantage and main realizable methods of E-mode AlGaN/GaN HEMT are briefly described. The research status and problems of E-mode AlGaN/GaN HEMT devices fabricated by p-GaN gate technology are summarized. The advances of p-GaN gate technology, and focuses on how these research results can improve the power characteristics and reliability of E-mode AlGaN/GaN HEMT by optimizing device structure and improving process technology, are discussed.

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Shuo Jia, Yong Cai, Deliang Wang, Baoshun Zhang, K. M. Lau, and K. J. Chen. "Enhancement-mode AlGaN/GaN HEMTs on silicon substrate." IEEE Transactions on Electron Devices 53, no. 6 (June 2006): 1474–77. http://dx.doi.org/10.1109/ted.2006.873881.

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Jia, Shuo, Yong Cai, Deliang Wang, Baoshun Zhang, Kei May Lau, and Kevin J. Chen. "Enhancement-mode AlGaN/GaN HEMTs on silicon substrate." physica status solidi (c) 3, no. 6 (June 2006): 2368–72. http://dx.doi.org/10.1002/pssc.200565119.

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Eisenbeiser, K., R. Droopad, and Jenn-Hwa Huang. "Metamorphic InAlAs/InGaAs enhancement mode HEMTs on GaAs substrates." IEEE Electron Device Letters 20, no. 10 (October 1999): 507–9. http://dx.doi.org/10.1109/55.791925.

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Lee, Jaesun, Dongmin Liu, Zhaojun Lin, Wu Lu, Jeffrey S. Flynn, and George R. Brandes. "Quasi-enhancement mode AlGaN/GaN HEMTs on sapphire substrate." Solid-State Electronics 47, no. 11 (November 2003): 2081–84. http://dx.doi.org/10.1016/s0038-1101(03)00245-4.

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Kumar, V., A. Kuliev, T. Tanaka, Y. Otoki, and I. Adesida. "High transconductance enhancement-mode AlGaN∕GaN HEMTs on SiC substrate." Electronics Letters 39, no. 24 (2003): 1758. http://dx.doi.org/10.1049/el:20031124.

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Liu, Shenghou, Yong Cai, Guodong Gu, Jinyan Wang, Chunhong Zeng, Wenhua Shi, Zhihong Feng, et al. "Enhancement-Mode Operation of Nanochannel Array (NCA) AlGaN/GaN HEMTs." IEEE Electron Device Letters 33, no. 3 (March 2012): 354–56. http://dx.doi.org/10.1109/led.2011.2179003.

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Dissertations / Theses on the topic "Enhancement Mode HEMTs"

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Wu, Yichao. "RF circuit applications of enhancement-mode AlGaN/GaN HEMTs /." View abstract or full-text, 2007. http://library.ust.hk/cgi/db/thesis.pl?ECED%202007%20WUY.

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Schuette, Michael L. "Advanced processing for scaled depletion and enhancement-mode AlGaN/GaN HEMTs." The Ohio State University, 2010. http://rave.ohiolink.edu/etdc/view?acc_num=osu1275524410.

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Macrelli, Elena. "Performance and Robustness of low-voltage enhancement-mode GaN-based power HEMTs with p-type gate." Master's thesis, Alma Mater Studiorum - Università di Bologna, 2021. http://amslaurea.unibo.it/24039/.

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This thesis is a report of the work of a six-months internship in imec, a R&D hub for nano- and digital technologies based in Leuven, Belgium. During this internship I worked on the characterization of enhancement-mode GaN-based lateral HEMT devices with p-GaN gate, aiming to understand the impact of different process variations, device layout and architecture on the electrical performance and reliability of the devices. After the first essential steps that included the study of the basics about device structure, fabrication and operations and literature review, I started to plan experiments and characterization routines with a focus on gate and OFF-state reliability and I performed the measurements and the data elaboration. The first chapter of this elaborate will present an overview on the field of power electronics: its relation to the theme of climate change and the state of its market nowadays. Then a presentation of p-GaN HEMT devices will follow, explaining the working of the transistor and all its fabrication options and issues. After that, the report will get into the real work done during the internship: two chapters will explain all the experimental details of the measurements and present the obtained results and observations. A final chapter will in the end summarize the results and draw some conclusions.

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Nguyen, Thi Dak Ha. "Réalisation et caractérisation de HEMTs AlGaN/GaN sur silicium pour applications à haute tension." Phd thesis, Université Paris Sud - Paris XI, 2013. http://tel.archives-ouvertes.fr/tel-00934655.

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Cette thèse est une contribution aux développements de HEMTS AlGaN/GaN sur substrat de silicium pour des applications basses fréquences sous fortes tensions (typiquement 600V) comme les commutateurs pour la domotique ou les circuits de puissance des véhicules électriques. Elle a été menée en collaboration étroite avec Picogiga International qui a réalisé toutes les épitaxies. Elle est composée de trois parties : développement d'une technologie de fabrication, étude des courants de fuite, amélioration du pouvoir isolant de la barrière et recherche d'un comportement "normally off". La réalisation de contacts ohmiques peu résistifs est l'étape cruciale de la fabrication des HEMTs AlGaN/GaN de puissance. Une optimisation de l'empilement des métaux utilisés, de la température et du temps de recuit ainsi que la recherche d'un compromis sur la distance métallisation - gaz d'électrons, nous a permis de réaliser des contacts ohmiques proches de l'état de l'art (0,5 Ohm.mm). L'origine des courants de fuite a été systématiquement étudiée sur cinq types d'épitaxies différentes. La distance grille - drain et les courants de fuites ont été identifiés comme étant les deux facteurs limitant la tension de claquage. Selon la structure, les courants de fuite ont lieu soit à travers la grille (~e-8 A/mm à 210V), soit en parallèle au canal (e-5 A/mm). Dans les deux cas, ces courants sont comparables aux courants de fuite au travers du tampon (i.e. courants mesurés entre deux mésas). Ces courants de fuite, ont été attribués aux couches de transition nécessaires à l'adaptation de l'épitaxie des couches de nitrure sur le substrat de silicium. La réalisation de HEMT AlGaN/GaN sur silicium pour les applications à haute tension passera donc par une amélioration de ces couches tampons.Nous avons démontré qu'il est possible d'améliorer l'isolation de la barrière en AlGaN grâce à une hydrogénation du matériau. En effet un traitement de surface des transistors par un plasma hydrogène permet, par diffusion, d'y incorporer de l'hydrogène qui passive les dislocations traversantes. Après traitement, les courants de fuite de grille sont réduits et la tension de claquage est repoussée à 400V avec des courants de fuite de l'ordre de e-6 A/mm. Dans ces conditions, le claquage a alors lieu en surface de l'échantillon, il n'est plus limité que par la distance grille-drain. Ce résultat ouvre la voie à la réalisation de HEMT à forte tension de claquage (V~600V).L'effet du plasma fluoré SF6 sur les caractéristiques électriques des HEMT (AlN/GaN)/GaN (la barrière est en super-réseaux AlN/GaN) a été étudié pour la première fois dans cette thèse. Les ions fluor incorporés dans cette barrière agissent comme des donneurs qui font augmenter la densité du gaz bi-dimensionnel d'électrons et décaler la tension de pincement vers les tensions négatives. Cet effet est à l'opposé de celui observé dans les HEMT à barrière en AlGaN. Ce résultat élimine la possibilité de réaliser les HEMT (AlN/GaN)/GaN "normally off" par un dopage au fluor, une technique simple et efficace qui donne de bons résultats sur les HEMT à barrière AlGaN. D'autre part, il apporte quelques réponses expérimentales aux prévisions théoriques d'utiliser le fluor pour les dopages de type n ou p dans les nitrures d'éléments III.

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Greco, Giuseppe. "AlGaN/GaN heterostructures for enhancement mode transistors." Doctoral thesis, Università di Catania, 2013. http://hdl.handle.net/10761/1347.

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Today the continuous increase of electric power demand is in our society a global concern. Hence, the reduction of the energy consumption has become the main task of modern power electronics. In this context, wide band semiconductors (WBG), such as gallium nitride (GaN) and related alloys, have outstanding physical properties that can enable to overcome the limitations of Silicon, in terms of operating power, frequency and temperature of the devices. An interesting aspects related to GaN materials is the possibility to grow AlGaN/GaN heterostructures, in which a two dimensional electron gas (2DEG) is formed at the heterojunction. Basing on the presence of the 2DEG, AlGaN/GaN heterostructures are particularly interesting for the fabrication of high electron mobility transistors (HEMTs). One of the most challenging aspects on this field is the development of enhancement mode AlGan/GaN HEMT. This devices would offer a simplified circuitry, in combination with favourable operating conditions for device safety. Hence, this thesis is entitled AlGaN/GaN heterostructures for enhancement mode transistors . The aim of this work was to clarify the mechanisms ruling the electronic transport at some relevant interfaces in AlGaN/GaN devices, after surface modification processes used in normally-off technologies. The thesis is divided in 6 chapters. In the first two chapters, the properties of GaN and related AlGaN alloys are described, explaining the formation of the 2DEG and the working principle of HEMT devices. In chapter 3, a nanoscale characterization of modified AlGaN surfaces is presented in order to deplete the 2DEG. Two different approaches have been studied, i.e., the use of a fluorine plasma treatment and the use of a local oxidation process. Even though a depletion of the 2DEG is possible, several reliability concerns need to be investigated before a practical application to devices can be envisaged. Among the possible approaches for enhancement mode transistors using AlGaN/GaN heterostructures, the use of a p-GaN gate contact seems to be the most interesting one. Hence, chapter 4 reports a detailed investigation on the formation of Ohmic contact to p-GaN. The evolution of a Au/Ni bilayer, annealed at different temperatures and in two different atmospheres (Ar or N2/O2) was considered. The electrical measurements of the contacts annealed under different conditions demonstrated a reduction of the specific contact resistance in oxidizing atmosphere. Structural characterizations of the metal layer associated with nanoscale electrical measurements, allowed to give a possible scenario on the Ohmic contact formation mechanisms. Finally, the temperature dependence of the specific contact resistance allowed the extraction of the metal/p-GaN barrier. The fabrication and characterization of AlGaN/GaN transistors with the use of a p-GaN cap layer under the gate contact is presented in chapter 5. The electrical characterization of p-GaN/AlGaN/GaN transistors demonstrated a significant positive shift of the threshold voltage (Vth) with respect to devices without p-GaN gate. A normally-off behaviour of the devices (Vth= +1.4 V) was obtained upon a reduction of the barrier layer thickness and Al concentration. Finally, a preliminary study on the use of nickel oxide (NiO) as a dielectric below the Schottky gate contact in AlGaN/GaN heterostructures is reported in the last chapter. First, a structural and morphological investigation of the NiO layers grown by MOCVD showed continuous epitaxial film. The electrical measurements on devices allowed to extract a value of the dielectric constant for the grown NiO very close to the theoretical one, and a reduction of the leakage current in HEMT structures integrating such a dielectric. The experimental results of this thesis are summarized in the conclusive section, that also briefly describes the remaining open issues and the possible continuation of this research activity.

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Wang, Ruonan. "Enhancement/depletion-mode HEMT technology for III-nitride mixed-signal and RF applications /." View abstract or full-text, 2008. http://library.ust.hk/cgi/db/thesis.pl?ECED%202008%20WANG.

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Yi, Congwen. "Reliability study of enhancement-mode AIGaN/GaN HEMT fabricated with fluorine plasma treatment technology /." View abstract or full-text, 2008. http://library.ust.hk/cgi/db/thesis.pl?ECED%202008%20YI.

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Barranger, Damien. "Développement de transistor AlGaN/GaN E-mode sur substrat silicium 200 mm compatible avec une salle blanche CMOS." Thesis, Lyon, 2017. http://www.theses.fr/2017LYSEI135.

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La thèse porte sur le développement de composants à base d’hétérojonction AlGaN/GaN. Cette hétérojonction permet de bénéficier d’une excellente mobilité (2000 cm²/V.s) grâce à l’apparition d’un gaz d’électron dans le GaN. Cependant, les composants fabriqués sur cette hétérojonction sont normally-on. Pour des raisons de sécurité et d’habitude de conception des composants normally-off sont nécessaires. Il existe de nombreuses façons de fabriquer des transistors normally-off à base d’hétérojonction AlGaN/GaN, dans cette thèse nous avons choisi d’étudier un MOSCHEMT, cette structure est caractérisée par une grille de type MOS et des accès de type HEMT possédant les excellentes propriétés de l’hétérojonction, en fonction des paramètres technologiques : épitaxie, process et structure des composants. L’une des variations technologiques étudiées est une structure cascodée permettant d’améliorer les performances à l’état passant sans détériorer la caractéristique en blocage des composants. L’objectif est de concevoir un composant normally-off sur substrat silicium 200 mm avec une tension de seuil supérieure à 1V, pouvant tenir 600 V en blocage, avec un calibre en courant entre 10 A et 30 A et compatible en salle blanche CMOS. Le manuscrit comporte quatre chapitres. Grâce à une étude bibliographique, le premier chapitre présente les différentes méthodes permettant d’obtenir un transistor normally-off à base de nitrure de gallium. Ce chapitre présente et justifie le choix technologique du CEA-LETI. Le deuxième chapitre présente les modèles ainsi que les méthodes de caractérisations utilisés au cours de la thèse. Le troisième chapitre traite des résultats obtenus en faisant varier les paramètres de fabrication sur les MOSC-HEMT. Enfin, le quatrième chapitre montre une étude sur une technologie innovante de type cascode. Cette structure doit permettre d’augmenter la tension de claquage des transistors sans détériorer l’état passant
This thesis focuses on the development of AlGaN/GaN heterojunction components or HEMT. This heterojunction has an excellent mobility (2000 cm² / V.s) thanks to the appearance of an electron gas in the GaN. However, the components made with this heterojunction are normally-on. For safety reasons particularly, normally-off components are required. There are many ways to make normally-off transistors based on AlGaN/GaN heterojunction. In this thesis we chose to study a MOSCHEMT strucutre. This structure is characterized by a MOS type gate and HEMT type accesses. The study shows the effects of technological parameters (epitaxy, process and component structure) on the electrical behaviour of the components. Another structure studied is the monolithic cascode, which can improve on-state performance of the MOSC-HEMT without damaging the characteristic in reverse of the components. The objective of this thesis is to design a normally-off component on silicon substrate 200 mm with a threshold voltage higher than 1V, able to hold 600 V in reverse, with a current rating between 10 A and 30 A and compatible in CMOS clean room. The manuscript has four chapters. Through a bibliographic review, the first chapter presents the different methods to obtain a normally-off transistor based on gallium nitride. This chapter presents and justifies the technological choice of CEA-LETI. The second chapter presents the models as well as the methods of characterizations used during the thesis. The third chapter deals with the results obtained by varying the manufacturing parameters on the MOSC-HEMTs. Finally, the fourth chapter shows a study on innovative cascode technology. This structure must make it possible to increase the breakdown voltage of the transistors without damaging the on state

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Chao, Kuan-Hua, and 趙冠驊. "High Linearity Enhancement-Mode Double-Channel AlGaN/GaN HEMTs." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/94888739604069885591.

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碩士
國立雲林科技大學
電子工程系
103
The GaN material of III-V compounds has the excellent properties of material such as high breakdown voltage, high thermal conductivity, small permittivity and high cut-off frequency. It always has been operated in high power, high temperature and high frequency circuits because of the excellent characteristics of carrier transmission of AlGaN/GaN high electron mobility transistors (HEMTs). In the applications of communication transmission, linearity of device has effect in the degree of distortion of signal. Therefore, linearity is an important factor of device quality. However, in the condition of zero bias that two-dimensional electron gas (2DEG) always exists because of the own properties of AlGaN/GaN HEMTs. Therefore, we have to exert a negative bias to close the device because of the device is depletion-mode. It is a drawback in the applications of power electronic devices so the circuit design is more complicate. Therefore, for reducing the cost of circuit design and the wasting of resources that how to design the enhancement-mode GaN material transistor is an important issue. In this thesis, Sentaurus TCAD is used to simulate device characteristics of AlGaN/GaN HEMTs. First, we will introduce physical models and simulate the electrical characteristics of AlGaN/GaN HEMTs, in which the physical parameters will be calibrated so that the simulation results matches the measured data from a reference data. This process ensures the accuracy of the subsequent simulation work. Next, we will rebuilt our device in to a double-channel structure which’s basic design consult to a reference that has double AlGaN/GaN heterojunctions. After that we will compare the property of composite structure before we have a device which has a flat and wide transconductance peak after we modulate the variation and location of twin transconductance peaks of double-channel AlGaN/GaN HEMTs. The linearity is improved. Last, we use recessed-gate and changing the thick of material layer with partially p-type doping which’s location is under gate that make the depletion-mode device turning into enhancement-mode. Thus we successfully design an enhancement-mode double-channel AlGaN/GaN HEMT which has high linearity.

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Chen, Jian-You, and 陳建佑. "Enhancement-Mode GaN Power HEMTs for High Frequency Applications." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/e6kb36.

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碩士
國立交通大學
材料科學與工程學系所
107
Enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) have been widely studied in recent years. The gate recess is a common method to realize the E-mode operation because of the suppressions of short-channel effect and current collapse effect. The device performance of E-mode GaN HEMTs has traditionally been limited by low maximum drain current and high on-resistance because of the interface defect at the oxide/AlGaN interface. Therefore, we used the in-situ N2 plasma pre-treatment prior to the gate oxide deposition to improve the interface quality of oxide/AlGaN interface by removing surface native oxide and generating the nitridation inter-layer (NIL). The treated device can obtain a high maximum drain current density and a high transconductance. Besides, a thin-barrier AlGaN/GaN HEMT structure was conducted to provide a good recess uniformity and yield because the thin-barrier structure with a shallow etch depth is suitable for the etch control of the gate recess process. The gate-recessed thin-barrier E-mode AlGaN/GaN HEMT device with the N2 plasma pre-treatment exhibited superior electrical performances, including a maximum drain current density (IDS,max) of 1.068 A/mm, a peak extrinsic transconductance (gm) of 740 mS/mm, a threshold voltage (Vth) of 0.12 V, and a fT/fMAX of 45/110 GHz. At 38 GHz, a maximum output power (Pout) of 0.7 W/mm, a peak power-added efficiency (PAE) of 23.3 %, and a linear gain of 6.05 dB were obtained.

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Book chapters on the topic "Enhancement Mode HEMTs"

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Alam, Shamshad, Mamta Khosla, Ashish Raman, and Ravi Ranjan. "Effects of Variation in Gate Material on Enhancement Mode P-GaN AlGaN/GaN HEMTs." In Nanoelectronics for Next-Generation Integrated Circuits, 137–46. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9781003155751-8.

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Swain, Raghunandan, and Trupti Ranjan Lenka. "Enhancement-Mode MOSHEMT." In HEMT Technology and Applications, 129–37. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-2165-0_10.

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Chakraborty, Apurba, Saptarshi Ghosh, Ankush Bag, Palash Das, and Dhrubes Biswas. "Analytical Expression of Barrier Layer for Enhancement Mode AlGaN/GaN HEMT." In Physics of Semiconductor Devices, 175–77. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_44.

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"Enhancement-Mode GaN HEMTs and Integrated Circuits." In Nitride Wide Bandgap Semiconductor Material and Electronic Devices, 281–306. Taylor & Francis Group, 6000 Broken Sound Parkway NW, Suite 300, Boca Raton, FL 33487-2742: CRC Press, 2016. http://dx.doi.org/10.1201/9781315368856-13.

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Hossain, Md Maruf, Md Maruf Hossain Shuvo, Twisha Titirsha, and Syed Kamrul Islam. "Modeling of Enhancement Mode HEMT with Π-Gate Optimization for High Power Applications." In Selected Topics in Electronics and Systems, 21–34. WORLD SCIENTIFIC, 2023. http://dx.doi.org/10.1142/9789811283765_0003.

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Conference papers on the topic "Enhancement Mode HEMTs"

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Suh, C., A. Chini, Y. Fu, C. Poblenz, J. Speck, and U. Mishra. "p-GaN/AlGaN/GaN Enhancement-Mode HEMTs." In 2006 64th Device Research Conference. IEEE, 2006. http://dx.doi.org/10.1109/drc.2006.305167.

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Zhiqun Cheng, Xiaopeng Zhou, and Kevin J. Chen. "Distributed amplifier using enhancement-mode AlGaN/GaN HEMTs." In 2008 International Conference on Communications, Circuits and Systems (ICCCAS). IEEE, 2008. http://dx.doi.org/10.1109/icccas.2008.4657735.

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Aoki, Hitoshi, Hiroyuki Sakairi, Naotaka Kuroda, Atsushi Yamaguchi, and Ken Nakahara. "Drain Current Characteristics of Enhancement Mode GaN HEMTs." In 2020 IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE, 2020. http://dx.doi.org/10.1109/apec39645.2020.9124203.

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Imada, T., M. Kanamura, and T. Kikkawa. "Enhancement-mode GaN MIS-HEMTs for power supplies." In 2010 International Power Electronics Conference (IPEC - Sapporo). IEEE, 2010. http://dx.doi.org/10.1109/ipec.2010.5542039.

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Kangping, Wang, Yang Xu, Zeng Xiangjun, Yu Xiaoling, Li Hongchang, Guo Yixuan, Gao Bing, and Ma Huan. "Analytical loss model of low voltage enhancement mode GaN HEMTs." In 2014 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE, 2014. http://dx.doi.org/10.1109/ecce.2014.6953381.

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Lin, Y. C., J. C. Lin, Y. Lin, C. H. Wu, Y. X. Huang, S. C. Liu, H. T. Hsu, et al. "Enhancement-mode GaN MIS-HEMTs with HfLaOx gate insulator." In 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)]. IEEE, 2016. http://dx.doi.org/10.1109/iciprm.2016.7528611.

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Zimmermann, T., Yu Cao, Jia Guo, Xiangning Luo, D. Jena, and H. Xing. "Top-down AlN/GaN enhancement- & depletion-mode nanoribbon HEMTs." In 2009 67th Annual Device Research Conference (DRC). IEEE, 2009. http://dx.doi.org/10.1109/drc.2009.5354874.

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Jia Guo, T. Zimmermann, D. Jena, and Huili Xing. "Ultra-scaled AlN/GaN enhancement-& depletion-mode nanoribbon HEMTs." In 2009 International Semiconductor Device Research Symposium (ISDRS 2009). IEEE, 2009. http://dx.doi.org/10.1109/isdrs.2009.5378155.

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Kim, S., I. Adesida, and Hwang. "Enhancement-mode InAlAs/InGaAs/InP HEMTs with Ir-based gate metallization." In Device Research Conference. IEEE, 2005. http://dx.doi.org/10.1109/drc.2005.1553147.

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Tang, K., Z. Li, T. P. Chow, Y. Niiyama, T. Nomura, and S. Yoshida. "Enhancement-mode GaN hybrid MOS-HEMTs with breakdown voltage of 1300V." In IC's (ISPSD). IEEE, 2009. http://dx.doi.org/10.1109/ispsd.2009.5158056.

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Reports on the topic "Enhancement Mode HEMTs"

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Shealy, James R. Enhancement Mode Power Switching AlGaN HEMTs. Fort Belvoir, VA: Defense Technical Information Center, May 2013. http://dx.doi.org/10.21236/ada584741.

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