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Relevant bibliographies by topics / Electrostatic Discharge Realiability of Electron Devices

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Journal articles
Dissertations / Theses
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Academic literature on the topic 'Electrostatic Discharge Realiability of Electron Devices'

Author: Grafiati

Published: 6 September 2023

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Journal articles on the topic "Electrostatic Discharge Realiability of Electron Devices"

1

Melnikov, Andrey, and Vladimir Obukhov. "Deceleration of ion and plasma flows in Hall-effect electrostatic systems." Physics of Plasmas 30, no. 3 (2023): 033505. http://dx.doi.org/10.1063/5.0127223.

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The paper presents the results of a theoretical and experimental study of the deceleration of ion and plasma flows in ion decelerators operating on the basis of an [Formula: see text] discharge with the Hall effect. For quantitative computational analysis of the deceleration process, an analytical model of the electric deceleration layer (E-layer) is proposed; it is based on a diffusion model of a discharge with closed electron drift, in the approximation of classical electron mobility transverse to the magnetic field, taking into account the electron current escape out of the ion beam region.

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Chen, Shen Li, and Wen Ming Lee. "Power MOSFET Devices and ESD Reliability Evaluations." Applied Mechanics and Materials 268-270 (December 2012): 1361–64. http://dx.doi.org/10.4028/www.scientific.net/amm.268-270.1361.

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The electrostatic discharge (ESD) reliabilities in different power MOSFETs will be investigated in this paper. From the experimental results, ESD zap pulses at the gate terminal will cause electrons or holes trap in the gate oxide and loss the Si-SiO2 interface integrity, especially for the 100V nDEMOS, 200V nDEMOS, and IRF640, in which they do not have any ESD protection strategy. Electrons or holes trapped in the gate SiO2 layer will be caused the transconductance (Gm) or threshold voltage (Vth) of a MOSFET increasing or reduction, and which is resulted from electron mobility degradation. Th

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Regodón, Guillermo Fernando, Juan Manuel Díaz-Cabrera, José Ignacio Fernández Palop, and Jerónimo Ballesteros. "Low Electron Temperature Plasma Diagnosis: Revisiting Langmuir Electrostatic Probes." Coatings 11, no. 10 (2021): 1158. http://dx.doi.org/10.3390/coatings11101158.

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This article describes a method of measurement of the current-to-probe voltage characteristic curve of a Langmuir electrostatic probe immersed in a plasma characterized by a low electron temperature that is only one order of magnitude higher than room temperature. These plasmas are widely used in industrial processes related to surface technology, polymers, cleaning, nanostructures, etc. The measurement method complies with the strict requirements to perform representative plasma diagnosis, particularly in the ion saturation zone when the probe is polarized much more negatively that the potent

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Henriques, Alexandra, Amin Rabiei Baboukani, Borzooye Jafarizadeh, Azmal Huda Chowdhury, and Chunlei Wang. "Nano-Confined Tin Oxide in Carbon Nanotube Electrodes via Electrostatic Spray Deposition for Lithium-Ion Batteries." Materials 15, no. 24 (2022): 9086. http://dx.doi.org/10.3390/ma15249086.

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The development of novel materials is essential for the next generation of electric vehicles and portable devices. Tin oxide (SnO2), with its relatively high theoretical capacity, has been considered as a promising anode material for applications in energy storage devices. However, the SnO2 anode material suffers from poor conductivity and huge volume expansion during charge/discharge cycles. In this study, we evaluated an approach to control the conductivity and volume change of SnO2 through a controllable and effective method by confining different percentages of SnO2 nanoparticles into carb

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Kurilenkov, Yurii, Vladimir Tarakanov, Alexander Oginov, Sergei Gus’kov, and Igor Samoylov. "On the plasma quasineutrality under oscillatory confinement based on a nanosecond vacuum discharge." Applied Physics, no. 6 (December 24, 2021): 14–23. http://dx.doi.org/10.51368/1996-0948-2021-6-14-23.

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One of the main problems for inertial electrostatic confinement devices with electron injection is the space charge neutralization. This work is devoted to the analysis of the problem of plasma quasineutrality in the scheme of plasma oscillatory confinement based on nanosecond vacuum discharge (NVD). Electrodynamics modeling of the processes of aneutronic fusion of proton–boron showed that the plasma in the NVD, and especially on the discharge axis, really corresponds to a quasineutral regime, which is rather different from the well-known scheme of periodically oscillating plasma spheres (POPS

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Yadav, Nitish, Kuldeep Mishra, and SA Hashmi. "Nanofiller-incorporated porous polymer electrolyte for electrochemical energy storage devices." High Performance Polymers 30, no. 8 (2018): 957–70. http://dx.doi.org/10.1177/0954008318774392.

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We report the poly(vinylidene fluoride-co-hexafluoropropylene) (PVdF-HFP)-based microporous polymer membranes, prepared by phase inversion technique, incorporated with different amounts of nanosized zirconium dioxide (ZrO2) filler. Scanning electron microscopy, X-ray diffraction, Fourier transform infrared spectroscopy and thermal studies confirm the role of ZrO2 nanofiller to modify the polymer structure, pore geometry and crystallinity. The nanofillers interact with the PVdF-HFP chains via surface groups and electrostatic interactions, and their incorporation led to an increase in crystallin

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Zirkle, Thomas A., Matthew J. Filmer, Jonathan Chisum, et al. "Radio Frequency Reflectometry of Single-Electron Box Arrays for Nanoscale Voltage Sensing Applications." Applied Sciences 10, no. 24 (2020): 8797. http://dx.doi.org/10.3390/app10248797.

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Single-electron tunneling transistors (SETs) and boxes (SEBs) exploit the phenomenon of Coulomb blockade to achieve unprecedented charge sensitivities. Single-electron boxes, however, despite their simplicity compared to SETs, have rarely been used for practical applications. The main reason for that is that unlike a SET where the gate voltage controls conductance between the source and the drain, an SEB is a two terminal device that requires either an integrated SET amplifier or high-frequency probing of its complex admittance by means of radio frequency reflectometry (RFR). The signal to noi

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Sheha, E., and E. M. Kamar. "Structural characteristic of vanadium(V) oxide/sulfur composite cathode for magnesium battery applications." Materials Science-Poland 37, no. 4 (2019): 570–76. http://dx.doi.org/10.2478/msp-2019-0079.

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AbstractMagnesium batteries are regarded as promising candidates for energy storage devices owing to their high volumetric capacity. The practical application is hindered, however, by strong electrostatic interactions between Mg2+ and the host lattice and due to the formation of a passivation layer between anode and electrolyte. V2O5 is a typical intercalation compound with a layered crystal structure ((0 0 1) interlayer spacing ~ 11.53 Å), which can act as a good host for the reversible insertion and extraction of multivalent cations. Herein, we have presented an investigation of the effects

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Mainka, Julia, Wei Gao, Nanfei He, Jérôme Dillet, and Olivier Lottin. "A General Equivalent Electrical Circuit Model for the Characterization of MXene/Graphene Oxide Hybrid-Fiber Supercapacitors By Electrochemical Impedance Spectroscopy." ECS Meeting Abstracts MA2022-01, no. 1 (2022): 152. http://dx.doi.org/10.1149/ma2022-011152mtgabs.

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Main text : Performance engineering of electrochemical energy-storage devices such as Supercapacitors (SCs) requires updated modelling capable of characterizing their electrical output in unique device geometries. In this work, an Equivalent Electrical Circuit (EEC) is developed to fit the impedance data of MXene/reduced Graphene Oxide (rGO) hybrid fiber-shaped supercapacitors (FSCs) fabricated by wet-spinning [1]. The model is applied for the interpretation of impedance data measured on FSCs using different active materials - rGO and MXene in the case of pseudo-capacitors (Figure - upper righ

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Jin, Jae Sik, and Joon Sik Lee. "Electron-Phonon Interaction Model and Its Application to Thermal Transport Simulation During Electrostatic Discharge Event in NMOS Transistor." Journal of Heat Transfer 131, no. 9 (2009). http://dx.doi.org/10.1115/1.3133882.

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First, the electron-phonon interaction model, which has recently been developed by authors for thermal predictions within the silicon devices in micro/nanoscales, is verified through the comparison with the experimental measurement of average temperature rise in the channel region of a silicon-on-insulator (SOI) transistor. The effect of the silicon layer thickness of the SOI transistor on phonon thermal characteristics is also investigated. It is found that the thickness effect on the peak temperature of the optical phonon mode in the hot spot region is negligible due to its very low group ve

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Dissertations / Theses on the topic "Electrostatic Discharge Realiability of Electron Devices"

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Kranthi, Nagothu Karmel. "ESD Reliability Physics and Reliability Aware Design of Advanced High Voltage CMOS & Beyond CMOS Devices." Thesis, 2021. https://etd.iisc.ac.in/handle/2005/5474.

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Electrostatic Discharge (ESD) reliability is one of the major reliability concerns in integrated circuits (IC), which if not addressed while designing devices and circuits, can lead to a permanent damage to the Integrated Circuits. The same becomes a rather more stringent in case of system level ESD events (System level ESD), which usually occurs in uncontrolled or harsh environments. To address these issues physical insights into the non-equilibrium electron-phonon (electro-thermal) behaviour of these devices, under nano-second time scale high-current conditions, are required to be developed.

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Conference papers on the topic "Electrostatic Discharge Realiability of Electron Devices"

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Kueing-Long Chen, G. Giles, and D. B. Scott. "Electrostatic discharge protection for one micron CMOS devices and circuits." In 1986 International Electron Devices Meeting. IRE, 1986. http://dx.doi.org/10.1109/iedm.1986.191226.

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Li, Cheng, Mengfu Di, Zijin Pan, and Albert Wang. "A Study of Materials Impacts on Graphene Electrostatic Discharge Switches." In 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). IEEE, 2021. http://dx.doi.org/10.1109/edtm50988.2021.9420816.

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Wang, Yuan. "A SPICE-Based Simulation Method for System Efficient Electrostatic Discharge Design." In 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). IEEE, 2022. http://dx.doi.org/10.1109/edtm53872.2022.9798202.

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Liou, Juin J. "Electrostatic discharge (ESD): A spoiler to development of next-generation technologies?" In 2010 IEEE International Conference of Electron Devices and Solid- State Circuits (EDSSC). IEEE, 2010. http://dx.doi.org/10.1109/edssc.2010.5713681.

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Zhiwei Liu, Aihua Dong, Zhuoyu Ji, et al. "Evaluation of electrostatic discharge (ESD) characteristics for bottom contact organic thin film transistor." In 2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC). IEEE, 2013. http://dx.doi.org/10.1109/edssc.2013.6628187.

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Zhou, Yuanzhong, and Jean-Jacques Hajjar. "A circuit model of electrostatic discharge generators for ESD and EMC SPICE simulation." In 2014 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC). IEEE, 2014. http://dx.doi.org/10.1109/edssc.2014.7061083.

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Konstantinov, U. A., E. D. Pozhidaev, and S. R. Tumkovskiy. "Investigation of Electrostatic Discharge Effect on High-power Mosfet-Transistors Considering the Influence of PCB." In 2019 International Seminar on Electron Devices Design and Production (SED). IEEE, 2019. http://dx.doi.org/10.1109/sed.2019.8798468.

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Jizhi, Liu, Liao Changjun, Liu Zhiwei, and Hou Fei. "A diode-triggered silicon-controlled rectifier with small diode width for electrostatic discharge applications." In 2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC). IEEE, 2017. http://dx.doi.org/10.1109/edssc.2017.8126435.

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9

Gazizov, Rustam R. "Evaluation of the Electrostatic Discharge Impact on the Printed Circuit Board: a Case Study." In 2022 IEEE 23rd International Conference of Young Professionals in Electron Devices and Materials (EDM). IEEE, 2022. http://dx.doi.org/10.1109/edm55285.2022.9855087.

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Kirillov, V. Yu, and M. M. Tomilin. "Calculation of strength of electrical and magnetic fields at a distances commesurate with a length chanel of electrostatic discharge." In 2016 International Conference on Actual Problems of Electron Devices Engineering (APEDE). IEEE, 2016. http://dx.doi.org/10.1109/apede.2016.7878903.

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