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Journal articles on the topic 'Electronic Structure - Ultra-thin Epitaxial Films'

Author: Grafiati

Published: 7 September 2023

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1

He, Jian-Wei, and PrebenJ Møller. "Epitaxial and electronic structures of ultra-thin copper films on MgO crystal surfaces." Surface Science Letters 178, no. 1-3 (December 1986): A681. http://dx.doi.org/10.1016/0167-2584(86)90218-5.

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2

He, Jian-Wei, and Preben J. Møller. "Epitaxial and electronic structures of ultra-thin copper films on MgO crystal surfaces." Surface Science 178, no. 1-3 (December 1986): 934–42. http://dx.doi.org/10.1016/0039-6028(86)90370-5.

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3

Krishnan, P. S. Sankara Rama, Jeffery A. Aguiar, Q. M. Ramasse, D. M. Kepaptsoglou, W. I. Liang, Y. H. Chu, N. D. Browning, P. Munroe, and V. Nagarajan. "Mapping strain modulated electronic structure perturbations in mixed phase bismuth ferrite thin films." Journal of Materials Chemistry C 3, no. 8 (2015): 1835–45. http://dx.doi.org/10.1039/c4tc02064b.

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A combination of atom column-by-column scanning transmission electron microscopy and density functional theory shows how epitaxial strain alters the local electronic structure in mixed phase bismuth ferrite thin films.

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4

Patel, Sahil J., Jason K. Kawasaki, John Logan, Brian D. Schultz, J. Adell, B. Thiagarajan, A. Mikkelsen, and Chris J. Palmstrøm. "Surface and electronic structure of epitaxial PtLuSb (001) thin films." Applied Physics Letters 104, no. 20 (May 19, 2014): 201603. http://dx.doi.org/10.1063/1.4879475.

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5

Nichols, J., J. Terzic, E. G. Bittle, O. B. Korneta, L. E. De Long, J. W. Brill, G. Cao, and S. S. A. Seo. "Tuning electronic structure via epitaxial strain in Sr2IrO4 thin films." Applied Physics Letters 102, no. 14 (April 8, 2013): 141908. http://dx.doi.org/10.1063/1.4801877.

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6

Katayama, Tsukasa, Akira Chikamatsu, Keisuke Yamada, Kei Shigematsu, Tomoya Onozuka, Makoto Minohara, Hiroshi Kumigashira, Eiji Ikenaga, and Tetsuya Hasegawa. "Epitaxial growth and electronic structure of oxyhydride SrVO2H thin films." Journal of Applied Physics 120, no. 8 (August 23, 2016): 085305. http://dx.doi.org/10.1063/1.4961446.

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7

Lee, Sang A., Seokjae Oh, Jae-Yeol Hwang, Minseok Choi, Chulmin Youn, Ji Woong Kim, Seo Hyoung Chang, et al. "Enhanced electrocatalytic activity via phase transitions in strongly correlated SrRuO3thin films." Energy & Environmental Science 10, no. 4 (2017): 924–30. http://dx.doi.org/10.1039/c7ee00628d.

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8

Bendounan, A., H. Cercellier, Y. Fagot-Revurat, B. Kierren, V. Yu Yurov, and D. Malterre. "Interplay between surface and electronic structures in epitaxial Ag ultra thin films on Cu(111)." Applied Surface Science 212-213 (May 2003): 33–37. http://dx.doi.org/10.1016/s0169-4332(03)00014-x.

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9

Chang, C. L., C. L. Chen, C. L. Dong, and G. Chern. "Structure and electronic properties of epitaxial Fe-Co-O thin films." Acta Crystallographica Section A Foundations of Crystallography 58, s1 (August 6, 2002): c263. http://dx.doi.org/10.1107/s010876730209548x.

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10

van Benthem, Klaus, Christina Scheu, Wilfried Sigle, Christian Elsässer, and Manfred Rühle. "Electronic Structure Investigations of Metal / SrtiO3 Interfaces Using EELS." Microscopy and Microanalysis 7, S2 (August 2001): 304–5. http://dx.doi.org/10.1017/s1431927600027598.

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Ni, Pd and Cr thin films were grown on (100)SrTiO3 surfaces by molecular beam epitaxy at substrate temperatures of TNJ, pd=650°C and Tcr =150°C. Electron energy-loss spectroscopy (EELS) and high resolution transmission electron microscopy (HRTEM) were applied to investigate the local electronic structure and the atomic structure of the interfaces, respectively. Analytical microscopy was carried out with a parallel energy-loss spectrometer (PEELS766) attached to a dedicated scanning transmission electron microscope (STEM) operated at 100keV, which has a point resolution of 0.22 nm. HRTEM studies were performed on a Jeol JEM ARM 1250 operated at 1250keV (0.12 nm point resolution). Conventional TEM and HRTEM experiments showed epitaxial orientation relationships between the thin metal films and the substrate for each interface.The electronic structure of the interfaces in terms of the site- and symmetry projected density of states (PDOS) above the Fermi-level can be extracted from the electron energy-loss near-edge structures (ELNES).

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11

Xu, Xiaoshan, Corbyn Mellinger, Zhi Gang Cheng, Xuegang Chen, and Xia Hong. "Epitaxial NiCo₂O₄ film as an emergent spintronic material: Magnetism and transport properties." Journal of Applied Physics 132, no. 2 (July 14, 2022): 020901. http://dx.doi.org/10.1063/5.0095326.

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The ferrimagnetic inverse spinel NiCo2O4 has attracted extensive research interest for its versatile electrochemical properties, robust magnetic order, high conductivity, and fast spin dynamics, as well as its highly tunable nature due to the closely coupled charge, spin, orbital, lattice, and defect effects. Single-crystalline epitaxial thin films of NiCo2O4 present a model system for elucidating the intrinsic physical properties and strong tunability, which are not viable in bulk single crystals. In this Perspective, we discuss the recent advances in epitaxial NiCo2O4 thin films, focusing on understanding its unusual magnetic and transport properties in light of crystal structure and electronic structure. The perpendicular magnetic anisotropy in compressively strained NiCo2O4 films is explained by considering the strong spin–lattice coupling, particularly on Co ions. The prominent effect of growth conditions reveals the complex interplay between the crystal structure, cation stoichiometry, valence state, and site occupancy. NiCo2O4 thin films also exhibit various magnetotransport anomalies, including linear magnetoresistance and sign change in anomalous Hall effect, which illustrate the competing effects of band-intrinsic Berry phase and impurity scattering. The fundamental understanding of these phenomena will facilitate the functional design of NiCo2O4 thin films for nanoscale spintronic applications.

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12

Zhang, Yi, Miguel M. Ugeda, Chenhao Jin, Su-Fei Shi, Aaron J. Bradley, Ana Martín-Recio, Hyejin Ryu, et al. "Electronic Structure, Surface Doping, and Optical Response in Epitaxial WSe2 Thin Films." Nano Letters 16, no. 4 (March 17, 2016): 2485–91. http://dx.doi.org/10.1021/acs.nanolett.6b00059.

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13

Scholz, Markus, Rüdiger Schmidt, Stefan Krause, Achim Schöll, Friedrich Reinert, and Frank Würthner. "Electronic structure of epitaxial thin films of bay-substituted perylene bisimide dyes." Applied Physics A 95, no. 1 (December 31, 2008): 285–90. http://dx.doi.org/10.1007/s00339-008-5013-1.

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14

GABOR, M. S., M. BELMEGUENAI, F. ZIGHEM, S. M. CHERIF, T. PETRISOR, T. PETRISOR, C. TIUSAN, and M. HEHN. "ELECTRONIC, STRUCTURAL AND MAGNETIC PROPERTIES OF Co2FeAl THIN FILMS FOR POTENTIAL SPINTRONIC APPLICATIONS." SPIN 04, no. 04 (December 2014): 1440022. http://dx.doi.org/10.1142/s2010324714400220.

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This paper presents an overview concerning the electronic, structural and magnetic properties of Co 2 FeAl (CFA) thin films. We first used ab initio calculations of the electronic structure in order to discuss the half-metallicity of this compound. Involving a correlated structural-magnetic analysis, we then illustrate, experimentally, the effect of the thickness as well as the annealing temperature on the magnetic and structural properties of CFA films epitaxially grown on MgO (001) single crystal substrates. The X-ray diffraction shows that in our samples having the CFA(001)[110]// MgO (001)[100] epitaxial relation, the chemical order is enhanced as the thickness and the annealing temperature (T a ) are increased. Ferromagnetic resonance measurements reveal further dynamic magnetic properties. The gyromagnetic factor, estimated at 29.2 GHz/T, is both thickness and annealing temperature independent. The in-plane anisotropy results from the superposition between a dominant fourfold symmetry term, as expected for cubic crystal symmetry of the alloy, and a small uniaxial term. The fourfold anisotropy decreases with increasing thickness and annealing temperature. The exchange stiffness constant is thickness independent but increases with T a . In addition, the effective magnetization varies linearly with T a and with the inverse CFA thickness. This is due to the presence of perpendicular uniaxial anisotropy, estimated around -1.8 erg/cm2 at T a = 600°C and 1.05 erg/cm2 at T a = 265°C, respectively. Frequency and angular dependences of the FMR linewidth show two magnon scattering and mosaicity contributions which depend on the CFA thickness and T a . A Gilbert damping coefficient as low as 0.0011 is found for samples annealed at 600°C. Finally, we illustrate that these films can be used as ferromagnetic electrodes in sputtered epitaxial magnetic tunnel junctions (MTJ) based on MgO (001) tunnel barriers. These MTJs show an improvable TMR ratio around 95% at room temperature.

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15

ANGILELLA, G. G. N., G. BALESTRINO, P. CERMELLI, P. PODIO-GUIDUGLI, and A. A. VARLAMOV. "STRAIN-INDUCED ELECTRONIC TOPOLOGICAL TRANSITIONS IN LaSrCuO THIN FILMS." International Journal of Modern Physics B 17, no. 04n06 (March 10, 2003): 542–47. http://dx.doi.org/10.1142/s0217979203016200.

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We review a Ginzburg-Landau phenomenological model for the dependence of the critical temperature on microscopic strain in tetragonal high-T c cuprates. Such a model is in agreement with the experimental results for LSCO under epitaxial strain, as well as with the hydrostatic pressure dependence of T c in most cuprates. In particular, a nonmonotonic dependence of T c on hydrostatic pressure, as well as on in-plane or apical microstrain, is derived. From a microscopic point of view, such results can be understood as due to the proximity to an electronic topological transition (ETT). In the case of LSCO, we argue that such an ETT can be driven by a strain-induced modification of the band structure, at constant hole content, at variance with a doping-induced ETT, as is usually assumed.

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16

Zhang, Yan-ping, Hai-feng Liu, Hai-long Hu, Rui-shi Xie, Guo-hua Ma, Ji-chuan Huo, and Hai-bin Wang. "Orientation-dependent structural and photocatalytic properties of LaCoO 3 epitaxial nano-thin films." Royal Society Open Science 5, no. 2 (February 2018): 171376. http://dx.doi.org/10.1098/rsos.171376.

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LaCoO 3 epitaxial films were grown on (100), (110) and (111) oriented LaAlO 3 substrates by the polymer-assisted deposition method. Crystal structure measurement and cross-section observation indicate that all the LaCoO 3 films are epitaxially grown in accordance with the orientation of LaAlO 3 substrates, with biaxial compressive strain in the ab plane. Owing to the different strain directions of CoO 6 octahedron, the mean Co–O bond length increases by different amounts in (100), (110) and (111) oriented films compared with that of bulk LaCoO 3 , and the (100) oriented LaCoO 3 has the largest increase. Photocatalytic degradation of methyl orange indicates that the order of photocatalytic activity of the three oriented films is (100) > (111) > (110). Combined with analysis of electronic nature and band structure for LaCoO 3 films, it is found that the change of the photocatalytic activity is closely related to the crystal field splitting energy of Co 3+ and Co–O binding energy. The increase in the mean Co–O bond length will decrease the crystal field splitting energy of Co 3+ and Co–O binding energy and further reduce the value of band gap energy, thus improving the photocatalytic activity. This may also provide a clue for expanding the visible-light-induced photocatalytic application of LaCoO 3 .

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17

Arnold, Fabian, Jonas Warmuth, Matteo Michiardi, Jan Fikáček, Marco Bianchi, Jin Hu, Zhiqiang Mao, et al. "Electronic structure of Fe1.08Te bulk crystals and epitaxial FeTe thin films on Bi2Te3." Journal of Physics: Condensed Matter 30, no. 6 (January 12, 2018): 065502. http://dx.doi.org/10.1088/1361-648x/aaa43e.

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18

Towner, D. J., T. J. Lansford, and B. W. Wessels. "Three Dimensional Domain Structure in Epitaxial Barium Titanate Thin Films." Journal of Electroceramics 13, no. 1-3 (July 2004): 89–93. http://dx.doi.org/10.1007/s10832-004-5081-3.

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19

Meneau D'Anterroches, C. "Defects in ErSi2/Si(111) epitaxial films." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 4 (August 1990): 572–73. http://dx.doi.org/10.1017/s0424820100175995.

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Silicides are studied in electronic engineering for their good metallic properties. Among them the group of rare earth silicides shows particular properties. Indeed, some of them, including ErSi2, crystallize in the AIB2 structure although they do not have the exact stoechiometry, their composition being about 1.7. Thus the physical properties and the influence of vacancies on the structure are studied.The film studied in this work was obtained by in-situ annealing, in ultra high vacuum, of a Si-Er film codeposited on a clean Si (111) substrate. Details are given by F. Arnaud d'Avitaya et al. The epitaxial relationship is (111 )Si//(001 )ErSi2 and (112)Si//(100)ErSi2. According to this orientation the lattice mismatch at the interface is - 1.3 %. The films were analysed using high resolution transmission electron microscopy : they are continuous when annealed at 900°C, and show some extra-spots in their diffraction patterns depending on the zone axis. Extra spots were observed along the {111} (3) and {112} zone axes, but not along {110} (4), We will focus in this paper on the {112}Si or {120}ErSi2 zone axis, the corresponding electron diffraction pattern being in Fig. 1.

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20

Nono Tchiomo, Arnaud P., Emanuela Carleschi, Aletta R. E. Prinsloo, Wilfried Sigle, Peter A. van Aken, Jochen Mannhart, Prosper Ngabonziza, and Bryan P. Doyle. "Combined spectroscopy and electrical characterization of La:BaSnO₃ thin films and heterostructures." AIP Advances 12, no. 10 (October 1, 2022): 105019. http://dx.doi.org/10.1063/5.0105116.

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For La-doped BaSnO3 thin films grown by pulsed laser deposition, we combine chemical surface characterization and electronic transport studies to probe the evolution of electronic states in the band structure for different La-doping contents. Systematic analyses of spectroscopic data based on fitting the core electron line shapes help to unravel the composition of the surface as well as the dynamics associated with increasing doping. These dynamics are observed with a more pronounced signature in the Sn 3d core level, which exhibits an increasing asymmetry to the high binding energy side of the peak with increasing electron density. The present results expand the current understanding of the interplay between the doping concentration, electronic band structure, and transport properties of epitaxial La:BaSnO3 films.

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21

Wormeester, H., E. Hüger, and E. Bauer. "Growth and electronic structure of thin epitaxial Pd and Co films on W(100)." Physical Review B 54, no. 23 (December 15, 1996): 17108–17. http://dx.doi.org/10.1103/physrevb.54.17108.

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22

Soni, S., S. Dalela, S. S. Sharma, E. K. Liu, W. H. Wang, G. H. Wu, M. Kumar, and K. B. Garg. "Study of electronic structure and magnetic properties of epitaxial Co2FeAl Heusler Alloy Thin Films." Journal of Alloys and Compounds 674 (July 2016): 295–99. http://dx.doi.org/10.1016/j.jallcom.2016.03.052.

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23

James, A. R., and X. X. Xi. "Structure-Property Relationships in Epitaxial, Low Loss SrTiO 3 Thin Films." Integrated Ferroelectrics 51, no. 1 (January 2003): 91–101. http://dx.doi.org/10.1080/10584580390229941.

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24

Freund, L. B. "Dislocation Mechanisms of Relaxation in Strained Epitaxial Films." MRS Bulletin 17, no. 7 (July 1992): 52–60. http://dx.doi.org/10.1557/s088376940004166x.

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Advances in the methods of deposition and characterization of crystalline films of submicron thickness have been dramatic over the past two decades. A principal motivation for development of this technology has been the potential for use of thin film semiconductor materials in electronic and optoelectronic devices. The main function of these devices is to control transport of electrons in a way which permits high spatial density, and in which the carriers are highly mobile, that is, they show fast response with little power consumption. Spatial control of mobile electrons can be facilitated by combining materials, forming a material heterostructure, with one or more of these materials being a thin film. Carrier confinement is enforced by a difference in energy band structure across the interface acting as a barrier. The exploitation of this physical effect in device design is called bandgap engineering. A great deal of attention has been focused on film/substrate systems involving the III-V compounds (InGaAs/GaAs, for example), as well as on II-VI compounds for optical applications (ZnSe/GaAs, for example). Current efforts are also directed toward SiGe/Si and GaAs/Si systems to exploit well-developed silicon device technology.

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25

Scheu, C., W. Stein, R. Schweinfest, T. Wagner, and M. Röhle. "Atomic Structure and Bonding of Epitaxial CU Films on (1120) A-Al203." Microscopy and Microanalysis 6, S2 (August 2000): 182–83. http://dx.doi.org/10.1017/s1431927600033407.

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Thin Cu films were grown on single crystalline α-Al2O3 by molecular beam epitaxy at a substrate temperature of T = 800°C. The nominally 100 nm thin film consists of islands, which have diameters of 0.5-1 μm. High-resolution transmission electron microscopy (HRTEM) and electron energy-loss spectroscopy (EELS) were applied to obtain information about the atomic and electronic structure of the interface. HRTEM studies were performed on the Jeol JEM ARM 1250 operated at 1250 kV (point resolution of 0.12 nm). Analytical studies were conducted on a dedicated scanning TEM (VG HB 501) operated at 100 kV and equipped with a parallel EELS (Gatan 666).HRTEM of the Cu/ Al2O3-interface shows an atomically abrupt interface and reveals an epitaxial orientation relationship (1120)s[0001]s || (111)Cu <211>Cu (S denotes sapphire) (FIG.l). Close-packed planes and directions in both crystals are parallel to each other resulting in misfits of 2% and 7% in <211>Cu- and <110>Cu-directions, respectively. The interface is not coherent, but in both directions no misfit dislocations are detectable.

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26

Chatterjee, Shouvik. "Heavy fermion thin films: progress and prospects." Electronic Structure 3, no. 4 (October 29, 2021): 043001. http://dx.doi.org/10.1088/2516-1075/ac2d7a.

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Abstract Heavy fermion compounds are a remarkable class of inter-metallic systems, where the presence of several competing interactions leads to the emergence of a plethora of exotic properties. Although these compounds have been extensively studied in the last few decades, their epitaxial synthesis in a thin film form has remained poorly explored. The ability to create these materials in a bottoms-up manner opens up the possibility of both controlling and engineering their properties at the atomic scale, and allows fabrication of artificial heterostructures and superlattices that have no bulk analogues. Furthermore, experimental probes, which are compatible with a thin film geometry but are difficult to make use of with bulk single crystals, can be utilized to gain new insights into their electronic structure. Motivated by the recent advances in thin film technology, this review aims to explore the challenges in thin film growth of heavy fermion systems, presents an overview of the recent progress, and outlines unique opportunities that exist, which are of fundamental scientific importance and could be harnessed for potential technological applications.

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27

Sadovnikov, S. I. "Preparation and Morphology of CdZnS Thin Films." International Journal of Nanoscience 18, no. 03n04 (June 2019): 1940060. http://dx.doi.org/10.1142/s0219581x1940060x.

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Thin films based on limited solid solutions of cadmium and zinc sulfides have been synthesized by a one-stage epitaxial layer-by-layer deposition from an ammonium-containing aqueous solution of cadmium and zinc chlorides and thiocarbamide on a glass substrate. The thickness control of sulfide layers was carried out by selection of reagent concentrations and the deposition conditions. The relationship between the synthesis conditions of CdxZn[Formula: see text]S thin films and the size of sulfide nanoparticles in these films is established. The films contain two phases: hexagonal (space group [Formula: see text]) phase with [Formula: see text] structure of wurtzite type and cubic (space group [Formula: see text]-[Formula: see text]) phase with [Formula: see text] structure of sphalerite type. It is shown that the CdxZn[Formula: see text]S film consists of separate [Formula: see text][Formula: see text]nm agglomerates which are a collection of smaller nanometer-sized particles. The dependence of the band gap of the synthesized films on their thickness is found.

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28

Xiang, Pai, Ji-Shan Liu, Ming-Ying Li, Hai-Feng Yang, Zheng-Tai Liu, Cong-Cong Fan, Da-Wei Shen, Zhen Wang, and Zhi Liu. "In Situ Electronic Structure Study of Epitaxial Niobium Thin Films by Angle-Resolved Photoemission Spectroscopy." Chinese Physics Letters 34, no. 7 (July 2017): 077402. http://dx.doi.org/10.1088/0256-307x/34/7/077402.

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29

Matsushige, Kazumi. "Structural Evaluation and Molecular Control of Vacuum-Evaporated Organic Thin Films." MRS Bulletin 20, no. 6 (June 1995): 26–31. http://dx.doi.org/10.1557/s0883769400036940.

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Recently, organic molecules and their complexes with inorganic or metallic materials have drawn many researchers' interest as candidate materials for nanoscale electronic devices of the next generation, especially since Carter's proposal on molecular electronic devices (MEDs) with the functions of gating, switching, memory, etc. in one molecule. However, in order to build such nanoscopic organic electronic devices to replace conventional silicon-based inorganic devices, one must determine how to produce such nanoscale devices and to recognize the electronic states of a single molecule.The scanning tunneling microscope (STM) developed by G. Binning and H. Rohrer made it possible to visualize atoms and molecules in real space under various atmospheres. In addition, STMs can be used as nanoscopic tools for manipulation of individual atoms and molecules, thus realizing MEDs and nanotechnology.In this article, we present our recent achievements concerning the STM as well as in situ x-ray diffraction studies on the molecular structure of ultrathin films prepared by vacuum evaporation. STM observations with atomic resolution reveal the mechanism of nuclei formation and the crystal-growth process in organic molecules. Computer simulations based on STM images of polar organic molecules with electronic dipoles have elucidated the role of electronic interaction for their aggregation structures.Also, nanometer-sized molecular memory can be created by applying an electronic pulse to the evaporated organic films through the STM tip. Furthermore, we discuss the principle of a newly developed in situ total reflection x-ray diffraction (TRXD) apparatus and its application to the evaluation of crystal structure and molecular orientation in organic thin films during the evaporation process, particularly in regard to the role of the substrate, that is, epitaxial growth on organic molecular crystals.

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30

Kumar, Manish, Sunita Rani, and Hyun Hwi Lee. "Fabrication and Properties of Epitaxial VO2 Thin Film on m-Al2O3 Substrate." Coatings 13, no. 2 (February 15, 2023): 439. http://dx.doi.org/10.3390/coatings13020439.

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A thin film of thermochromic VO2 was prepared on m-Al2O3 substrate using a radio frequency (RF) magnetron sputtering technique. The epitaxial growth of the monoclinic M1 phase of VO2 on the m-Al2O3 substrate was confirmed through synchrotron X-ray diffraction (XRD) measurements. The transformation of this monoclinic M1 phase into a rutile phase at ~68 °C was reflected in the temperature-dependent XRD measurements of the VO2 thin film. The temperature-dependent electrical resistance measurements of this sample also revealed an abrupt metal-to-insulator transition at ~68 °C, which is reversible in nature. Temperature-dependent X-ray absorption (XAS) measurements at V L-edge and O K-edge were performed to study the electronic structure of the epitaxial VO2/m-Al2O3 thin film during the metal-to-insulator (MIT) transition.

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31

Kaji, Toshihiko, Toshihiro Shimada, Hiroaki Inoue, Yoichiro Kuninobu, Yutaka Matsuo, Eiichi Nakamura, and Koichiro Saiki. "Molecular Orientation and Electronic Structure of Epitaxial Bucky Ferrocene (Fe(C60(CH3)5)C5H5) Thin Films." Journal of Physical Chemistry B 108, no. 28 (July 2004): 9914–18. http://dx.doi.org/10.1021/jp037668v.

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32

Kitamura, M., I. Ohkubo, M. Matsunami, K. Horiba, H. Kumigashira, Y. Matsumoto, H. Koinuma, and M. Oshima. "Electronic structure characterization of La2NiMnO6 epitaxial thin films using synchrotron-radiation photoelectron spectroscopy and optical spectroscopy." Applied Physics Letters 94, no. 26 (June 29, 2009): 262503. http://dx.doi.org/10.1063/1.3159826.

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33

De Santis, Maurizio, Aude Bailly, Ian Coates, Stéphane Grenier, Olivier Heckmann, Karol Hricovini, Yves Joly, et al. "Epitaxial growth and structure of cobalt ferrite thin films with large inversion parameter on Ag(001)." Acta Crystallographica Section B Structural Science, Crystal Engineering and Materials 75, no. 1 (January 18, 2019): 8–17. http://dx.doi.org/10.1107/s2052520618016177.

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Cobalt ferrite ultrathin films with the inverse spinel structure are among the best candidates for spin filtering at room temperature. High-quality epitaxial CoFe2O4 films about 4 nm thick have been fabricated on Ag(001) following a three-step method: an ultrathin metallic CoFe2 alloy was first grown in coherent epitaxy on the substrate and then treated twice with O2, first at room temperature and then during annealing. The epitaxial orientation and the surface, interface and film structure were resolved using a combination of low-energy electron diffraction, scanning tunnelling microscopy, Auger electron spectroscopy and in situ grazing-incidence X-ray diffraction. A slight tetragonal distortion was observed, which should drive the easy magnetization axis in-plane due to the large magneto-elastic coupling of such a material. The so-called inversion parameter, i.e. the Co fraction occupying octahedral sites in the ferrite spinel structure, is a key element for its spin-dependent electronic gap. It was obtained through in situ resonant X-ray diffraction measurements collected at both the Co and Fe K edges. The data analysis was performed using FDMNES, an ab initio program already extensively used to simulate X-ray absorption spectroscopy, and shows that the Co ions are predominantly located on octahedral sites with an inversion parameter of 0.88 (5). Ex situ X-ray photoelectron spectroscopy gives an estimation in accordance with the values obtained through diffraction analysis.

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34

Wang, W. T. "Structure and Magnetic Properties of Multiferroic DyMnO₃ Epitaxial Thin Films Grown on Different Substrates." Journal of Magnetics 25, no. 2 (June 30, 2020): 121–25. http://dx.doi.org/10.4283/jmag.2020.25.2.121.

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35

Bai, Zi Long, Xiao Xing Cheng, Dong Fang Chen, David Wei Zhang, Long-Qing Chen, James F. Scott, Cheol Seong Hwang, and An Quan Jiang. "Hierarchical Domain Structure and Extremely Large Wall Current in Epitaxial BiFeO3 Thin Films." Advanced Functional Materials 28, no. 31 (June 6, 2018): 1801725. http://dx.doi.org/10.1002/adfm.201801725.

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36

Li, Yongkuan, Xinxing Liu, Dan Wen, Kai Lv, Gang Zhou, Yue Zhao, Congkang Xu, and Jiangyong Wang. "Growth of c-plane and m-plane aluminium-doped zinc oxide thin films: epitaxy on flexible substrates with cubic-structure seeds." Acta Crystallographica Section B Structural Science, Crystal Engineering and Materials 76, no. 2 (March 19, 2020): 233–40. http://dx.doi.org/10.1107/s2052520620002668.

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Manufacturing high-quality zinc oxide (ZnO) devices demands control of the orientation of ZnO materials due to the spontaneous and piezoelectric polarity perpendicular to the c-plane. However, flexible electronic and optoelectronic devices are mostly built on polymers or glass substrates which lack suitable epitaxy seeds for the orientation control. Applying cubic-structure seeds, it was possible to fabricate polar c-plane and nonpolar m-plane aluminium-doped zinc oxide (AZO) films epitaxially on flexible Hastelloy substrates through minimizing the lattice mismatch. The growth is predicted of c-plane and m-plane AZO on cubic buffers with lattice parameters of 3.94–4.63 Å and 5.20–5.60 Å, respectively. The ∼80 nm-thick m-plane AZO film has a resistivity of ∼11.43 ± 0.01 × 10−4 Ω cm, while the c-plane AZO film shows a resistivity of ∼2.68 ± 0.02 × 10−4 Ω cm comparable to commercial indium tin oxide films. An abnormally higher carrier concentration in the c-plane than in the m-plane AZO film results from the electrical polarity along the c-axis. The resistivity of the c-plane AZO film drops to the order of 10−5 Ω cm at 500 K owing to the semiconducting behaviour. Epitaxial AZO films with low resistivities and controllable orientations on flexible substrates offer optimal transparent electrodes and epitaxy seeds for high-performance flexible ZnO devices.

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Nukaga, Y., M. Ohtake, M. Futamoto, F. Kirino, N. Fujita, and N. Inaba. "Structure and Magnetic Properties of Co Epitaxial Thin Films Grown on MgO Single-Crystal Substrates." IEEE Transactions on Magnetics 45, no. 6 (June 2009): 2519–22. http://dx.doi.org/10.1109/tmag.2009.2018643.

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Cheng, Yuang-Tung, Tsung-Lin Lu, Shang-Husuan Wang, Jyh-Jier Ho, Chung-Cheng Chang, Chau-Chang Chou, and Jiashow Ho. "Performance of High Efficiency Avalanche Poly-SiGe Devices for Photo-Sensing Applications." Sensors 22, no. 3 (February 7, 2022): 1243. http://dx.doi.org/10.3390/s22031243.

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This paper explores poly-silicon-germanium (poly-SiGe) avalanche photo-sensors (APSs) involving a device of heterojunction structures. A low pressure chemical vapor deposition (LPCVD) technique was used to deposit epitaxial poly-SiGe thin films. The thin films were subjected to annealing after the deposition. Our research shows that the most optimal thin films can be obtained at 800 °C for 30 min annealing in the hydrogen atmosphere. Under a 3-μW/cm2 incident light (with a wavelength of 550 nm) and up to 27-V biased voltage, the APS with a n+-n-p-p+ alloy/SiO2/Si-substrate structure using the better annealed poly-SiGe film process showed improved performance by nearly 70%, 96% in responsivity, and 85% in quantum efficiency, when compared to the non-annealed APS. The optimal avalanche multiplication factor curve of the APS developed under the exponent of n = 3 condition can be improved with an increase in uniformity corresponding to the APS-junction voltage. This finding is promising and can be adopted in future photo-sensing and optical communication applications.

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Frisk, Andreas, Hasan Ali, Peter Svedlindh, Klaus Leifer, Gabriella Andersson, and Tomas Nyberg. "Composition, structure and magnetic properties of ultra-thin Fe/Ni multilayers sputter deposited on epitaxial Cu/Si(001)." Thin Solid Films 646 (January 2018): 117–25. http://dx.doi.org/10.1016/j.tsf.2017.11.023.

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YOSHIMOTO, Mamoru, Ryosuke YAMAUCHI, Daishi SHIOJIRI, Geng TAN, Satoru KANEKO, and Akifumi MATSUDA. "Room-temperature synthesis of epitaxial oxide thin films for development of unequilibrium structure and novel electronic functionalization." Journal of the Ceramic Society of Japan 121, no. 1409 (2013): 1–9. http://dx.doi.org/10.2109/jcersj2.121.1.

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41

Wang, Shufang, Liping He, Dogheche Elhadj, Jingchun Chen, Jianglong Wang, Mingjing Chen, Wei Yu, and Guangsheng Fu. "Growth and structure characterization of epitaxial Bi2Sr2Co2Oy thermoelectric thin films on LaAlO3 (001)." Thin Solid Films 518, no. 23 (September 2010): 6829–32. http://dx.doi.org/10.1016/j.tsf.2010.06.060.

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42

Lee, Kyeong-Seok, and Sunggi Baik. "Domain structure of epitaxial PbTio3 thin films: Effects of substrate selection and film thickness." Integrated Ferroelectrics 25, no. 1-4 (September 1999): 61–69. http://dx.doi.org/10.1080/10584589908210160.

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43

Nan, T., T. J. Anderson, J. Gibbons, K. Hwang, N. Campbell, H. Zhou, Y. Q. Dong, et al. "Anisotropic spin-orbit torque generation in epitaxial SrIrO3 by symmetry design." Proceedings of the National Academy of Sciences 116, no. 33 (July 26, 2019): 16186–91. http://dx.doi.org/10.1073/pnas.1812822116.

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Spin-orbit coupling (SOC), the interaction between the electron spin and the orbital angular momentum, can unlock rich phenomena at interfaces, in particular interconverting spin and charge currents. Conventional heavy metals have been extensively explored due to their strong SOC of conduction electrons. However, spin-orbit effects in classes of materials such as epitaxial 5d-electron transition-metal complex oxides, which also host strong SOC, remain largely unreported. In addition to strong SOC, these complex oxides can also provide the additional tuning knob of epitaxy to control the electronic structure and the engineering of spin-to-charge conversion by crystalline symmetry. Here, we demonstrate room-temperature generation of spin-orbit torque on a ferromagnet with extremely high efficiency via the spin-Hall effect in epitaxial metastable perovskite SrIrO3. We first predict a large intrinsic spin-Hall conductivity in orthorhombic bulk SrIrO3 arising from the Berry curvature in the electronic band structure. By manipulating the intricate interplay between SOC and crystalline symmetry, we control the spin-Hall torque ratio by engineering the tilt of the corner-sharing oxygen octahedra in perovskite SrIrO3 through epitaxial strain. This allows the presence of an anisotropic spin-Hall effect due to a characteristic structural anisotropy in SrIrO3 with orthorhombic symmetry. Our experimental findings demonstrate the heteroepitaxial symmetry design approach to engineer spin-orbit effects. We therefore anticipate that these epitaxial 5d transition-metal oxide thin films can be an ideal building block for low-power spintronics.

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TAKAHASHI, N., T. ZHANG, M. SPANGENBERG, D. GREIG, T. H. SHEN, S. CORNELIUS, E. A. SEDDON, and J. A. D. MATTHEW. "SPIN-RESOLVED PHOTOELECTRON SPECTROSCOPY OF ULTRATHIN Fe FILMS ON GaAs(001)." Surface Review and Letters 09, no. 02 (April 2002): 693–98. http://dx.doi.org/10.1142/s0218625x02002816.

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Thin epitaxial Fe films were grown on singular and vicinal GaAs(001) substrates, and their magnetic and electronic structures were investigated by synchrotron-based spin-resolved and spin-integrated photoelectron spectroscopy with different Fe thickness. There were two types of substrates: one was a Si-doped n-type GaAs(001) surface with doping concentration of 2 × 1018 cm -3 (singular substrate), and the other was orientated by 3° toward the (111)A direction (vicinal substrate). Spin polarization of the secondary electron peak at different growth stages of Fe coverage for the singular substrate sample and the vicinal one were measured. In the case of singular substrates, there was a dependence of their initial surface reconstruction, which is associated with complex domain structure, while no such the dependence was observed in the case of vicinal substrates. The result from the vicinal sample suggests the geometrical influence of the initial surface stoichiometry of the substrate.

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Mazzei, Laura, Max Wolff, Daniele Pergolesi, Joseph A. Dura, Lars Börjesson, Philipp Gutfreund, Marco Bettinelli, Thomas Lippert, and Maths Karlsson. "Structure and Conductivity of Epitaxial Thin Films of In-Doped BaZrO3-Based Proton Conductors." Journal of Physical Chemistry C 120, no. 50 (November 16, 2016): 28415–22. http://dx.doi.org/10.1021/acs.jpcc.6b08570.

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46

Wu, K. H., H. J. Chen, C. C. Hsieh, C. W. Luo, T. M. Uen, J. Y. Lin, and J. Y. Juang. "Epitaxial-Strain Effects on Electronic Structure and Magnetic Properties of Hexagonal YMnO3 Thin Films Studied by Femtosecond Spectroscopy." Journal of Superconductivity and Novel Magnetism 26, no. 4 (December 29, 2012): 801–7. http://dx.doi.org/10.1007/s10948-012-2037-8.

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47

Gattinoni, Chiara, Nives Strkalj, Rea Härdi, Manfred Fiebig, Morgan Trassin, and Nicola A. Spaldin. "Interface and surface stabilization of the polarization in ferroelectric thin films." Proceedings of the National Academy of Sciences 117, no. 46 (October 29, 2020): 28589–95. http://dx.doi.org/10.1073/pnas.2007736117.

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Ferroelectric perovskites present a switchable spontaneous polarization and are promising energy-efficient device components for digital information storage. Full control of the ferroelectric polarization in ultrathin films of ferroelectric perovskites needs to be achieved in order to apply this class of materials in modern devices. However, ferroelectricity itself is not well understood in this nanoscale form, where interface and surface effects become particularly relevant and where loss of net polarization is often observed. In this work, we show that the precise control of the structure of the top surface and bottom interface of the thin film is crucial toward this aim. We explore the properties of thin films of the prototypical ferroelectric lead titanate (PbTiO3) on a metallic strontium ruthenate (SrRuO3) buffer using a combination of computational (density functional theory) and experimental (optical second harmonic generation) methods. We find that the polarization direction and strength are influenced by chemical and electronic processes occurring at the epitaxial interface and at the surface. The polarization is particularly sensitive to adsorbates and to surface and interface defects. These results point to the possibility of controlling the polarization direction and magnitude by engineering specific interface and surface chemistries.

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48

Mohammed, Wael M., Igor V. Yanilkin, Amir I. Gumarov, Airat G. Kiiamov, Roman V. Yusupov, and Lenar R. Tagirov. "Epitaxial growth and superconducting properties of thin-film PdFe/VN and VN/PdFe bilayers on MgO(001) substrates." Beilstein Journal of Nanotechnology 11 (May 15, 2020): 807–13. http://dx.doi.org/10.3762/bjnano.11.65.

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Single-layer vanadium nitride (VN) and bilayer Pd0.96Fe0.04/VN and VN/Pd0.92Fe0.08 thin-film heterostructures for possible spintronics applications were synthesized on (001)-oriented single-crystalline magnesium oxide (MgO) substrates utilizing a four-chamber ultrahigh vacuum deposition and analysis system. The VN layers were reactively magnetron sputtered from a metallic vanadium target in Ar/N2 plasma, while the Pd1− x Fe x layers were deposited by co-evaporation of metallic Pd and Fe pellets from calibrated effusion cells in a molecular beam epitaxy chamber. The VN stoichiometry and Pd1− x Fe x composition were controlled by X-ray photoelectron spectroscopy. In situ low-energy electron diffraction and ex situ X-ray diffraction show that the 30 nm thick single-layer VN as well as the double-layer VN(30 nm)/Pd0.92Fe0.08(12 nm) and Pd0.96Fe0.04(20 nm)/VN(30 nm) structures have grown cube-on-cube epitaxially. Electric resistance measurements demonstrate a metallic-type temperature dependence for the VN film with a small residual resistivity of 9 μΩ·cm at 10 K, indicating high purity and structural quality of the film. The transition to the superconducting state was observed at 7.7 K for the VN film, at 7.2 K for the Pd0.96Fe0.04/VN structure and at 6.1 K for the VN/Pd0.92Fe0.08 structure with the critical temperature decreasing due to the proximity effect. Contrary to expectations, all transitions were very sharp with the width ranging from 25 mK for the VN film to 50 mK for the VN/Pd0.92Fe0.08 structure. We propose epitaxial single-crystalline thin films of VN and heteroepitaxial Pd1− x Fe x /VN and VN/Pd1− x Fe x (x ≤ 0.08) structures grown on MgO(001) as the materials of a choice for the improvement of superconducting magnetic random access memory characteristics.

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Ujimoto, K., T. Yoshimura, K. Wakazono, A. Ashida, and N. Fujimura. "Crystal structure and local piezoelectric properties of strain-controlled (001) BiFeO3 epitaxial thin films." Thin Solid Films 550 (January 2014): 738–41. http://dx.doi.org/10.1016/j.tsf.2013.10.178.

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Hahn, Th, H. Metzner, U. Reislöhner, J. Cieslak, J. Eberhardt, M. Müller, and W. Witthuhn. "Morphology and structure of thin epitaxial Cu(In,Ga)S2 films on Si substrates." Thin Solid Films 480-481 (June 2005): 332–35. http://dx.doi.org/10.1016/j.tsf.2004.11.086.

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