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Journal articles on the topic 'Electronic Spin - Semiconductor Structures'

Author: Grafiati

Published: 7 September 2023

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1

Koc, Husnu, Amirullah M. Mamedov, and Ekmel Ozbay. "Electronic Structure of Conventional Slater Type Antiferromagnetic Insulators: AIrO₃ (A=Sr, Ba) Perovskites." Journal of Physics: Conference Series 2315, no. 1 (July 1, 2022): 012033. http://dx.doi.org/10.1088/1742-6596/2315/1/012033.

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Abstract The structural, mechanical, and electronic properties of Perovskite BaIrO3 and SrIrO3 compounds based on the density functional theory (DFT) have been examined in four different structures (C2/c, R-3m, P6_3/mmc and Pm-3m) and Pnma structure, respectively. The spin polarized generalized gradient approximation has been used for modeling exchange-correlation effects. As a result of spin polarized calculations, it has been observed that BaIrO3 compound showed magnetic properties in C2/c and R-3m structures, but not in Pm-3m and P6_3/mmc structures. SrIrO3 compound also shows magnetic properties in Pnma structure. The elastic constants have been calculated using the strain-stress method and the other related quantities (the bulk modulus, shear modulus, Young’s modulus, Poisson’s ratio, anisotropy factor, sound velocities, and Debye temperature) have also been estimated. In electronic band structure calculations, while Pm-3m and P6_3/mmc structures of NaIrO3 compound are metallic and semiconductor (Eg = 1.190 eV indirect), respectively, while C2/c and R-3m structures showing magnetic properties are metallic in spin down state and semiconductor (Eg=0.992 eV indirect and Eg=0.665 eV direct, respectively) in the spin up state. The Pmna structure in the SrIrO3 compound is a semiconductor in both spin states (Eg=0.701 eV “0.632 eV” indirect in the spin up “spin down”).

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2

Butler, W. H., X. G. Zhang, Xindong Wang, Jan van Ek, and J. M. MacLaren. "Electronic structure of FM|semiconductor|FM spin tunneling structures." Journal of Applied Physics 81, no. 8 (April 15, 1997): 5518–20. http://dx.doi.org/10.1063/1.364587.

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3

Kacman, P. "Spin interactions in diluted magnetic semiconductors and magnetic semiconductor structures." Semiconductor Science and Technology 16, no. 4 (March 2, 2001): R25—R39. http://dx.doi.org/10.1088/0268-1242/16/4/201.

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4

POTEMSKI, MAREK. "SPECTROSCOPIC STUDIES OF SEMICONDUCTOR STRUCTURES IN MAGNETIC FIELDS." International Journal of Modern Physics B 21, no. 08n09 (April 10, 2007): 1358–61. http://dx.doi.org/10.1142/s0217979207042835.

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The aptitude of magneto-spectroscopic methods for studying the electronic and spin properties of semiconductor structures is demonstrated with a few examples of our recent work on two-dimensional electron gases and semiconductor quantum dots, on bulk GaAs and GaN , as well as on thin graphitic layers.

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5

Awschalom, D. D., J. F. Smyth, N. Samarth, H. Luo, and J. K. Furdyna. "Magnetic and electronic spin dynamics in magnetic semiconductor quantum structures." Journal of Luminescence 52, no. 1-4 (June 1992): 165–74. http://dx.doi.org/10.1016/0022-2313(92)90241-z.

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6

Tarucha, S., D. G. Austing, S. Sasaki, Y. Tokura, J. M. Elzerman, W. van der Wiel, S. de Franseschi, and L. P. Kouwenhoven. "Spin effects in semiconductor quantum dot structures." Physica E: Low-dimensional Systems and Nanostructures 10, no. 1-3 (May 2001): 45–51. http://dx.doi.org/10.1016/s1386-9477(01)00051-0.

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7

Yu, Leo, H. C. Huang, and O. Voskoboynikov. "Electron spin filtering in all-semiconductor tunneling structures." Superlattices and Microstructures 34, no. 3-6 (September 2003): 547–52. http://dx.doi.org/10.1016/j.spmi.2004.03.056.

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8

Takeyama, S., H. Mino, S. Adachi, T. Stirner, W. E. Hagston, H. Yokoi, Yu G. Semenov, et al. "Photoexcited spin states in diluted magnetic semiconductor quantum structures." Physica B: Condensed Matter 294-295 (January 2001): 453–58. http://dx.doi.org/10.1016/s0921-4526(00)00698-0.

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9

Li, Biao, Dahai Xu, Jun Zhao, and Hui Zeng. "First Principles Study of Electronic and Magnetic Properties of Co-Doped Armchair Graphene Nanoribbons." Journal of Nanomaterials 2015 (2015): 1–9. http://dx.doi.org/10.1155/2015/538180.

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Using the first principles calculations, we have studied the atomic and electronic structures of single Co atom incorporated with divacancy in armchair graphene nanoribbon (AGNR). Our calculated results show that the Co atom embedded in AGNR gives rise to significant impacts on the band structures and the FM spin configuration is the ground state. The presence of the Co doping could introduce magnetic properties. The calculated results revealed the arising of spin gapless semiconductor characteristics with doping near the edge in both ferromagnetic (FM) and antiferromagnetic (AFM) magnetic configurations, suggesting the robustness for potential application of spintronics. Moreover, the electronic structures of the Co-doped AGNRs are strongly dependent on the doping sites and the edge configurations.

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10

Gorbatyi, I. N. "Spin hall effect in semiconductor structures with spatially inhomogeneous spin relaxation." Semiconductors 43, no. 8 (August 2009): 1002–7. http://dx.doi.org/10.1134/s1063782609080089.

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11

Yang, Xinjian, and Hong Li. "Spin-dependent proximity effects in ferromagnetic semiconductor/superconductor structures." Journal of Magnetism and Magnetic Materials 322, no. 19 (October 2010): 2801–5. http://dx.doi.org/10.1016/j.jmmm.2010.04.033.

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12

Lai, Wenlong, Hui Yan, and Yukai An. "Stability, electronic structures, magnetic and optical properties of Fe and non-metal (NM=B, C, N) co-doped monolayer 2H-WSe2." Modern Physics Letters B 35, no. 07 (January 11, 2021): 2150122. http://dx.doi.org/10.1142/s0217984921501220.

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The effects of Fe–NM (NM=B, C, N) co-doping on the stability, electronic structures, magnetic and optical properties of 2H-WSe2 monolayer are investigated in detail by spin-polarized density functional theory (DFT) calculations. The results show that the Fe-doped WSe2 monolayer exhibits magnetic half-metallicity (HM) with a 100% spin polarization due to the electrons partially occupied Fe [Formula: see text] and [Formula: see text] bonding states at the Femi level [Formula: see text], and eventually induces a magnetic moment of 2 [Formula: see text]. The Fe–B and Fe–N co-doped WSe2 monolayers show obvious spin-polarization and retain semiconductor character with an indirect bandgap of 0.034 eV and 0.220 eV, respectively, which can be attributed to the strong hybridization between the Fe [Formula: see text], [Formula: see text] states and [Formula: see text], [Formula: see text] orbitals at the [Formula: see text]. Interestingly, the Fe–C co-doped WSe2 monolayer exhibits a typical non-magnetic semiconductor due to the effective charge compensation between Fe and C atoms, leading to completely symmetrical spin-up and spin-down channel of [Formula: see text], [Formula: see text], [Formula: see text] and [Formula: see text] states near [Formula: see text]. Moreover, the optical properties of WSe2 monolayer can be effectively tuned by Fe–NM co-doping, which can attribute to the introduction of impurity state. The excellent magnetic HM, tunable magnetic, optical properties of Fe–NM co-doped WSe2 monolayers are of great significance for further application in the fields of spintronics, opto-electronics and magneto-optics devices.

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13

Bahadivand Chegini, Samira, and Mahboobeh Shahri Naseri. "The effects of the electric-magnetic barrier on the spin transmission in the multibarrier semiconductor heterostructures." European Physical Journal Applied Physics 98 (2023): 31. http://dx.doi.org/10.1051/epjap/2023220240.

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In the present paper, we study spin transmission in the multibarrier semiconductor heterostructures based on single particle effective mass approximation. These structures are double-barrier and triple-barrier semiconductor hetero-structures that a metallic ferromagnetic is deposited on them. Using Airy function and magnetic barriers approximated by delta function, we calculate transmission coefficient of tunneling electrons and spin polarization. Our results have shown that the parameters as the height and width of the electrical potential barrier, wave vector parallel to the barrier, applied bias voltage and magnetic field are effective parameters in determination of the transmission coefficient.

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14

Wei, Ming-Sheng, Zhou Cui, Xin Ruan, Qi-Wen Zhou, Xiao-Yi Fu, Zhen-Yan Liu, Qian-Ya Ma, and Yu Feng. "Interface Characterization of Current-Perpendicular-to-Plane Spin Valves Based on Spin Gapless Semiconductor Mn2CoAl." Applied Sciences 8, no. 8 (August 10, 2018): 1348. http://dx.doi.org/10.3390/app8081348.

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Employing the first-principles calculations within density functional theory (DFT) combined with the nonequilibrium Green’s function, we investigated the interfacial electronic, magnetic, and spin transport properties of Mn2CoAl/Ag/Mn2CoAl current-perpendicular-to-plane spin valves (CPP-SV). Due to the interface rehybridization, the magnetic moment of the interface atom gets enhanced. Further analysis on electronic structures reveals that owing to the interface states, the interface spin polarization is decreased. The largest interface spin polarization (ISP) of 78% belongs to the MnCoT-terminated interface, and the ISP of the MnMnT1-terminated interface is also as high as 45%. The transmission curves of Mn2CoAl/Ag/Mn2CoAl reveal that the transmission coefficient at the Fermi level in the majority spin channel is much higher than that in the minority spin channel. Furthermore, the calculated magnetoresistance (MR) ratio of the MnCoT-terminated interface reaches up to 2886%, while that of the MnMnT1-terminated interface is only 330%. Therefore, Mn2CoAl/Ag/Mn2CoAl CPP-SV with an MnCo-terminated interface structure has a better application in a spintronics device.

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15

Vu, Tuan V., Tran P. T. Linh, Huynh V. Phuc, C. A. Duque, A. I. Kartamyshev, and Nguyen N. Hieu. "Structural, electronic, and transport properties of Janus GaInX ₂ (X = S, Se, Te) monolayers: first-principles study." Journal of Physics: Condensed Matter 34, no. 4 (November 4, 2021): 045501. http://dx.doi.org/10.1088/1361-648x/ac316e.

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Abstract Two-dimensional Janus monolayers have outstanding electronic and transport properties due to their asymmetric atomic structures. In the present work, we systematically study the structural, electronic, and transport properties of the Janus GaInX 2 (X = S, Se, Te) monolayers by using the first-principles calculations. The stability of the investigated monolayers is confirmed via the analysis of vibrational spectrum and molecular dynamics simulations. Our calculations demonstrate that while GaInS2 and GaInSe2 monolayers are direct semiconductors, GaInTe2 monolayer exhibits the characteristics of an indirect semiconductor. The band gap of GaInX 2 decreases when the chalcogen element X varies from S to Te. Obtained results reveal that small spin–orbit splitting energy in the valence band is found around the Γ point of the Brillouin zone when the spin–orbit coupling is included. Interestingly, GaInS2 and GaInSe2 have high and directional isotropic electron mobility meanwhile the directional anisotropy of the electron mobility is found in the Janus GaInTe2 monolayer. Our findings not only present superior physical properties of GaInX 2 monolayers but also show promising potential applications of these materials in nanoelectronic devices.

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16

Itoh, Hiroyoshi, Syuta Honda, and Junichiro Inoue. "Electronic Structure and Spin-Injection of Co-Based Heusler Alloy/ Semiconductor Junctions." Key Engineering Materials 470 (February 2011): 54–59. http://dx.doi.org/10.4028/www.scientific.net/kem.470.54.

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The electronic structures of Co-based Heusler alloys with nonstoichiometric atomic compositions as well as those at the interface of semiconductor junctions are investigated using first principles band calculations. It is shown that the electronic structure of a Co-based Heusler alloy is half-metallic, even for nonstoichiometric but Co-rich compositions, whereas the half-metallicity is lost for Co-poor compositions. It is also shown that magnetic moments at the interface of Co2MnSi/ Si junctions are sensitive to the growth direction and interface structure of the junctions. Efficient spin-injection into Si can be achieved by using a (111)-oriented Co-rich Heusler alloy and controlling the layer-by-layer stacking sequence at the interface.

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17

SUBASHIEV, A. V., and J. E. CLENDENIN. "POLARIZED ELECTRON BEAMS WITH P≥90%, WILL IT BE POSSIBLE?" International Journal of Modern Physics A 15, no. 16 (June 30, 2000): 2519–27. http://dx.doi.org/10.1142/s0217751x00002597.

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Recent results of electron spin depolarization studies in electron emission from the photocathode semiconductor structures are reviewed. The main mechanisms of electronic depolarization being well understood, a considerable improvement of polarization is expected to be achieved in new superlattice structures, which can be designed to have less depolarization at excitation and in extraction to the surface. Additional polarization growth is expected to be obtained by lowering the operating temperature of the source.

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18

Husain, Shagufta Bano, and Maruph Hasan. "Epitaxial Lattice Matching and the Growth Techniques of Compound Semiconductors for their Potential Photovoltaic Applications." Journal of Modern Materials 5, no. 1 (June 4, 2018): 34–42. http://dx.doi.org/10.21467/jmm.5.1.34-42.

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This paper presents the recent advances in semiconductor alloys for photovoltaic applications. The two main growth techniques involved in these compounds are metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE), that has also been discussed. With these techniques, hetero-structures can be grown with a high efficiency. A combination of more than one semiconductor like GaAs, InGaAs and CuInGaAs increases the range of their electrical and optical properties. A large range of direct band gap, high optical absorption and emission coefficients make these materials optimally suitable for converting the light to electrical energy. Their electronic structures reveal that they are highly suitable for photovoltaic applications also because they exhibit spin orbit resonance and metal/semiconductor transitions. The dissociation energy has also been discussed in reference to the increased stability of these compounds.

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19

Feng, Yu, Zhou Cui, Ming-sheng Wei, Bo Wu, and Sikander Azam. "Spin Gapless Semiconductor–Nonmagnetic Semiconductor Transitions in Fe-Doped Ti2CoSi: First-Principle Calculations." Applied Sciences 8, no. 11 (November 9, 2018): 2200. http://dx.doi.org/10.3390/app8112200.

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Employing first-principle calculations, we investigated the influence of the impurity, Fe atom, on magnetism and electronic structures of Heusler compound Ti2CoSi, which is a spin gapless semiconductor (SGS). When the impurity, Fe atom, intervened, Ti2CoSi lost its SGS property. As TiA atoms (which locate at (0, 0, 0) site) are completely occupied by Fe, the compound converts to half-metallic ferromagnet (HMF) TiFeCoSi. During this SGS→HMF transition, the total magnetic moment linearly decreases as Fe concentration increases, following the Slate–Pauling rule well. When all Co atoms are substituted by Fe, the compound converts to nonmagnetic semiconductor Fe2TiSi. During this HMF→nonmagnetic semiconductor transition, when Fe concentration y ranges from y = 0.125 to y = 0.625, the magnetic moment of Fe atom is positive and linearly decreases, while those of impurity Fe and TiB (which locate at (0.25, 0.25, 0.25) site) are negative and linearly increase. When the impurity Fe concentration reaches up to y = 1, the magnetic moments of Ti, Fe, and Si return to zero, and the compound is a nonmagnetic semiconductor.

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20

Kim, D. H., Jihoon Hwang, Eunsook Lee, K. J. Lee, S. M. Choo, M. H. Jung, J. Baik, et al. "Valence states and electronic structures of Co and Mn substituted spin gapless semiconductor PbPdO2." Applied Physics Letters 104, no. 2 (January 13, 2014): 022411. http://dx.doi.org/10.1063/1.4861883.

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21

Bamshad, Zahra. "Spin Polarized Transport through Structures Consist of the Ferromagnetic Semiconductor in Presence of a Inhomogeneous Magnetic Field." Advanced Materials Research 194-196 (February 2011): 679–82. http://dx.doi.org/10.4028/www.scientific.net/amr.194-196.679.

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The spin-polarized transport is investigated in a magnetic tunnel junction which consists of two ferromagnetic electrodes separated by a magnetic barrier and a nonmagnetic metallic spacer placed in distance above the two dimensional electron gas (2DEG) in presence of an inhomogeneous external modulated magnetic field and a perpendicular wave vector dependent effective potential. Based on the transfer matrix method and the nearly-free-electron approximation the dependence of the conductance and spin polarization on the Fermi energy of the electrons are studied theoretically the. strong oscillations with large amplitude investigated in spin polarization in terms of the Fermi energy due to the inhomogeneous magnetic field. The conductance in terms of the Fermi energy shows no oscillation in low energy but has a strong pick in middle region. this results may be useful for the development of spin electronic devices based on coherent transport, or may be used as a tunable spin-filter.

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22

Sapega, V. F., D. Kolovos-Vellianitis, A. M. Petrov, A. Trampert, and K. H. Ploog. "Carrier spin polarization in ferromagnet–semiconductor (Ga,Mn)As/GaAs structures." Journal of Magnetism and Magnetic Materials 321, no. 7 (April 2009): 720–22. http://dx.doi.org/10.1016/j.jmmm.2008.11.034.

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23

D'Amico, I., and G. Vignale. "Effect of the Coulomb interaction on spin injection in semiconductor structures." Journal of Magnetism and Magnetic Materials 272-276 (May 2004): 1928–29. http://dx.doi.org/10.1016/j.jmmm.2003.12.1107.

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24

Gaj, J. A., J. Cibert, D. Ferrand, A. Golnik, M. Goryca, G. Karczewski, P. Kossacki, et al. "Optical probing of spin-dependent interactions in II–VI semiconductor structures." physica status solidi (b) 243, no. 4 (March 2006): 906–13. http://dx.doi.org/10.1002/pssb.200564712.

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25

Djefal, A., S. Amari, K. O. Obodo, L. Beldi, H. Bendaoud, R. F. L. Evans, and B. Bouhafs. "Half-Metallic Ferromagnetism in Double Perovskite Ca2CoMoO6 Compound: DFT+U Calculations." SPIN 07, no. 04 (December 2017): 1750009. http://dx.doi.org/10.1142/s2010324717500096.

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A systematic investigation on magnetism and spin-resolved electronic properties in double perovskite Ca2CoMoO6 compound was performed by using the full-potential augmented plane wave plus local orbitals (APW[Formula: see text]) method within the generalized gradient approximation (GGA-PBE) and GGA-PBE[Formula: see text] scheme. The stability of monoclinic phase ([Formula: see text] #14) relative to the tetragonal ([Formula: see text]#87) and cubic ([Formula: see text] #225) phase is evaluated. We investigate the effect of Hubbard parameter [Formula: see text]on the ground-state structural and electronic properties of Ca2CoMoO6 compound. We found that the ferromagnetic ground state is the most stable magnetic configuration. The calculated spin-polarized band structures and densities of states indicate that the Ca2CoMoO6 compound is half-metallic (HM) and half-semiconductor (HSC) ferromagnetic (FM) semiconductor with a total magnetic moment of 6.0 using GGA-PBE and GGA-PBE[Formula: see text], respectively. The Hubbard [Formula: see text] parameter provides better description of the electronic structure. Using the Vampire code, an estimation of exchange couplings and magnetic Curie temperature is calculated. Further, our results regarding the magnetic properties of this compound reveal their ferromagnetic nature. The GGA-PBE[Formula: see text] approach provides better band gap results as compared to GGA-PBE approximation. These results imply that Ca2CoMoO6 could be a promising magnetic semiconductor for application in spintronic devices.

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Yakimenko, Irina I., and Ivan P. Yakimenko. "Electronic properties of semiconductor quantum wires for shallow symmetric and asymmetric confinements." Journal of Physics: Condensed Matter 34, no. 10 (December 20, 2021): 105302. http://dx.doi.org/10.1088/1361-648x/ac3f01.

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Abstract Quantum wires (QWs) and quantum point contacts (QPCs) have been realized in GaAs/AlGaAs heterostructures in which a two-dimensional electron gas resides at the interface between GaAs and AlGaAs layered semiconductors. The electron transport in these structures has previously been studied experimentally and theoretically, and a 0.7 conductance anomaly has been discovered. The present paper is motivated by experiments with a QW in shallow symmetric and asymmetric confinements that have shown additional conductance anomalies at zero magnetic field. The proposed device consists of a QPC that is formed by split gates and a top gate between two large electron reservoirs. This paper is focussed on the theoretical study of electron transport through a wide top-gated QPC in a low-density regime and is based on density functional theory. The electron–electron interaction and shallow confinement make the splitting of the conduction channel into two channels possible. Each of them becomes spin-polarized at certain split and top gates voltages and may contribute to conductance giving rise to additional conductance anomalies. For symmetrically loaded split gates two conduction channels contribute equally to conductance. For the case of asymmetrically applied voltage between split gates conductance anomalies may occur between values of 0.25(2e 2/h) and 0.7(2e 2/h) depending on the increased asymmetry in split gates voltages. This corresponds to different degrees of spin-polarization in the two conduction channels that contribute differently to conductance. In the case of a strong asymmetry in split gates voltages one channel of conduction is pinched off and just the one remaining channel contributes to conductance. We have found that on the perimeter of the anti-dot there are spin-polarized states. These states may also contribute to conductance if the radius of the anti-dot is small enough and tunneling between these states may occur. The spin-polarized states in the QPC with shallow confinement tuned by electric means may be used for the purposes of quantum technology.

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AVERKIEV, NIKITA S., and KONSTANTIN S. ROMANOV. "2D ANOMALOUS MAGNETORESISTANCE IN THE PRESENCE OF SPIN–ORBIT SCATTERING." International Journal of Nanoscience 06, no. 03n04 (June 2007): 187–89. http://dx.doi.org/10.1142/s0219581x07004559.

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The model of weak localization in 2D semiconductor structures in the whole range of classically weak magnetic fields in the presence of the Elliot–Yafet spin relaxation has been developed. It was shown that the spin–orbit interaction influences the value of magnetoresistance in small magnetic fields (within diffusion approximation) and when diffusion approximation is no longer valid.

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Besombes, L., H. Boukari, C. Le Gall, A. Brunetti, C. L. Cao, S. Jamet, and B. Varghese. "Optical control of the spin of a magnetic atom in a semiconductor quantum dot." Nanophotonics 4, no. 1 (April 28, 2015): 75–89. http://dx.doi.org/10.1515/nanoph-2015-0003.

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Abstract:The control of single spins in solids is a key but challenging step for any spin-based solid-state quantumcomputing device. Thanks to their expected long coherence time, localized spins on magnetic atoms in a semiconductor host could be an interesting media to store quantum information in the solid state. Optical probing and control of the spin of individual or pairs of Manganese (Mn) atoms (S = 5/2) have been obtained in II-VI and IIIV semiconductor quantum dots during the last years. In this paper, we review recently developed optical control experiments of the spin of an individual Mn atoms in II-VI semiconductor self-assembled or strain-free quantum dots (QDs).We first show that the fine structure of the Mn atom and especially a strained induced magnetic anisotropy is the main parameter controlling the spin memory of the magnetic atom at zero magnetic field. We then demonstrate that the energy of any spin state of a Mn atom or pairs of Mn atom can be independently tuned by using the optical Stark effect induced by a resonant laser field. The strong coupling with the resonant laser field modifies the Mn fine structure and consequently its dynamics.We then describe the spin dynamics of a Mn atom under this strong resonant optical excitation. In addition to standard optical pumping expected for a resonant excitation, we show that the Mn spin population can be trapped in the state which is resonantly excited. This effect is modeled considering the coherent spin dynamics of the coupled electronic and nuclear spin of the Mn atom optically dressed by a resonant laser field. Finally, we discuss the spin dynamics of a Mn atom in strain-free QDs and show that these structures should permit a fast optical coherent control of an individual Mn spin.

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Chen, Guo Xiang, and Dou Dou Wang. "First-Principles Study on Structural and Electronic Properties of the Armchair GaN Nanoribbons." Advanced Materials Research 703 (June 2013): 67–70. http://dx.doi.org/10.4028/www.scientific.net/amr.703.67.

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Calculations have been performed for the structures and electronic properties of GaN nanoribbons with armchair edge (AGaNNRs), using the first-principles projector-augmented wave (PAW) potential within density functional theory (DFT) framework. The lowest unoccupied conduction band (LUCB) and the highest occupied valence band (HOVB) are always separated, representing a semiconductor character for the AGaNNRs. In addition, the majority and minority spin bands are fully superposition and therefore the AGaNNRs are non-magnetic. As the nanoribbons width increase, band gaps of AGaNNRs decrease monotonically and become close to their asymptotic limit of a single layer of GaN sheet.

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GRUBIN, H. L., and H. L. CUI. "SPIN DEPENDENT TRANSPORT IN QUANTUM AND CLASSICALLY CONFIGURED DEVICES." International Journal of High Speed Electronics and Systems 16, no. 02 (June 2006): 639–58. http://dx.doi.org/10.1142/s0129156406003904.

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This paper presents of development of quantum transport equations for barrier devices with both electron and hole transport in dilute magnetic semiconductor (DMS) structures. The equations are developed from the time dependent equation of motion of the density matrix equation in the coordinate representation, from which both the spin drift and diffusion and transient Wigner equations are obtained, for a system in which high 'g' factor materials result in significant spin-splitting of the valence and conduction bands. Then for a structure in which the DMS layer is confined to the first barrier solutions to the coupled Poisson's and spin dependent Wigner equations yield the IV and carrier distributions. Negative differential conductance as well as the significant unequal spinup and spin down charge distributions are obtained.

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Germanenko, A. V., V. V. Kurzhaev, G. M. Minkov, E. L. Rumyantsev, and O. E. Rut. "Spin-dependent tunnelling in metal-insulator-gapless semiconductor structures in a magnetic field." Semiconductor Science and Technology 8, no. 3 (March 1, 1993): 383–87. http://dx.doi.org/10.1088/0268-1242/8/3/013.

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32

Wang, Ke, Hai Wang, Min Zhang, Yan Liu, and Wei Zhao. "Electronic and magnetic properties of doped black phosphorene with concentration dependence." Beilstein Journal of Nanotechnology 10 (May 2, 2019): 993–1001. http://dx.doi.org/10.3762/bjnano.10.100.

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In this paper, we employed first-principles calculations and chose Si and S atoms as impurities to explore the concentration-dependence of electronic structure and magnetism of doped phosphorene. It is found that the stability of doped phosphorene improves continuously with increasing the supercell size and decreasing impurity concentration due to the reduction of deformation. The stability of pristine phosphorene is invariable. The band structures of Si- and S-doped phosphorene without spin polarization always show metallic states suggesting the bandgap is insensitive to the in-plane size of the supercell and the dopant content. However, the results are fairly different once the spin polarization is taken into account. The band structures of Si- and S-doped phosphorene become those of a semimetal or a semiconductor as the in-plane size of the supercell goes up to 4 × 4 × 1 or 5 × 5 × 1 and the concentration goes down to 1.56% or 1%, respectively. In addition, we also observe that all Si- and S-doped phosphorene are magnetic, except for the Si-doped phosphorene with 2 × 2 × 1 supercell and a dopant content of 6.25%. The magnetic moment induced by 3p orbit–spin splitting increases with the in-plane size of the supercell, and the largest magnetic moment can be found in 4 × 4 × 1 and 5 × 5 × 1 supercells. These findings offer an alternative method to tune the magnetism and electronic structure of black phosphorene, which might be beneficial for its application in future spintronic devices.

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Fu, Huarui, Yunlong Li, Li Ma, Caiyin You, Qing Zhang, and Na Tian. "Structures, magnetism and transport properties of the potential spin-gapless semiconductor CoFeMnSi alloy." Journal of Magnetism and Magnetic Materials 473 (March 2019): 16–20. http://dx.doi.org/10.1016/j.jmmm.2018.10.040.

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Maryam Darvishpour, Maryam Darvishpour, and Mohammad Hossein Fekri Mohammad Hossein Fekri. "Investigation of the Magnetic and Electronic Properties of Copper Nanocluster Cu14 Contaminated with Fe, Ni and Co." Journal of the chemical society of pakistan 42, no. 3 (2020): 399. http://dx.doi.org/10.52568/000647.

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We have presented density functional calculations of the electronic structures and magnetic properties of bimetallics nanoclusters Cu14-nMn (n=1-3) (M=Fe, Ni and Co) in the FCC crystal structure. For the calculations of the physical properties of the compounds, we have used the full potential linearized augmented plane wave method. The magnetic nature, semiconducting, half metallicity and metalloid of transition metals clusters in the FCC crystal structure are investigated. Results show that studied systems have ferromagnetic properties against Cu14Cluster. It is found that band gap of the clusters decreases with doping of atoms compared to pure cluster Cu14, Particularly for Fe. These calculations show that Cu14 and Cu12Co2 are metals, while Cu13Fe, Cu12Fe2, Cu13Co, Cu11Co3 and Cu11Ni3 are half-metals and Cu11Fe3 and Cu12Ni2 are metalloid. Between these clusters, Cu13Ni is semiconductor. The spin polarization and the magnetic moment of the systems are dependent on number and type of the host transition metal atoms. The Cu13Ni has maximum spin polarization and stability. These results provide a new candidate for applications this series of compounds as dilute magnetic clusters and half-metal in spintronic devices.

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35

Maryam Darvishpour, Maryam Darvishpour, and Mohammad Hossein Fekri Mohammad Hossein Fekri. "Investigation of the Magnetic and Electronic Properties of Copper Nanocluster Cu14 Contaminated with Fe, Ni and Co." Journal of the chemical society of pakistan 42, no. 3 (2020): 399. http://dx.doi.org/10.52568/000647/jcsp/42.03.2020.

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We have presented density functional calculations of the electronic structures and magnetic properties of bimetallics nanoclusters Cu14-nMn (n=1-3) (M=Fe, Ni and Co) in the FCC crystal structure. For the calculations of the physical properties of the compounds, we have used the full potential linearized augmented plane wave method. The magnetic nature, semiconducting, half metallicity and metalloid of transition metals clusters in the FCC crystal structure are investigated. Results show that studied systems have ferromagnetic properties against Cu14Cluster. It is found that band gap of the clusters decreases with doping of atoms compared to pure cluster Cu14, Particularly for Fe. These calculations show that Cu14 and Cu12Co2 are metals, while Cu13Fe, Cu12Fe2, Cu13Co, Cu11Co3 and Cu11Ni3 are half-metals and Cu11Fe3 and Cu12Ni2 are metalloid. Between these clusters, Cu13Ni is semiconductor. The spin polarization and the magnetic moment of the systems are dependent on number and type of the host transition metal atoms. The Cu13Ni has maximum spin polarization and stability. These results provide a new candidate for applications this series of compounds as dilute magnetic clusters and half-metal in spintronic devices.

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Li, Teng, Hong Liang Pan, and Shi Liang Yang. "Simulation of Optical Properties of Ni-Doped ZnO Based on Density Functional Theory." Advanced Materials Research 846-847 (November 2013): 1931–34. http://dx.doi.org/10.4028/www.scientific.net/amr.846-847.1931.

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The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60 meV).Based on first-principles spin-density functional calculations, the electronic structures and reflectivity of pure ZnO have been calculated. We find that theory calculated peaks basal consistent with the experiment results. The absorbing properties of Ni doped ZnO have also been calculated and the relationships between electronic structures and absorbing properties are investigated. The results show that the absorbing properties of Co doped ZnO improved significantly compared to pure ZnO system. Absorption frequency peak moves to low frequency and one absorption band appear at 1236.9nm.The theoretical results have offered a direction for the designing and application of ZnO which could lead to lasing action based on exciton recombination even above room temperature.

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GRUBIN, H. L. "SPIN DEPENDENT WIGNER FUNCTION SIMULATIONS OF DILUTED MAGNETIC SEMICONDUCTOR SUPERLATTICES – B FIELD TUNING." International Journal of High Speed Electronics and Systems 17, no. 04 (December 2007): 877–88. http://dx.doi.org/10.1142/s0129156407005053.

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Two terminal devices have traditionally provided band-structure based high frequency operation. Third terminal control often involves hybrid design approaches. The presence of diluted magnetic semiconductor layers in device fabrication should permit the magnetic field to function as a pseudothird terminal. This is discussed for single barrier, double barrier and superlattice structures, where control is demonstrated. The limits of high frequency operation are discussed in general terms with application to barrier devices and superlattices containing DMS layers.

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WAN, F., M. B. A. JALIL, S. G. TAN, and T. FUJITA. "SPIN-POLARIZED TRANSPORT THROUGH GaAs/AlGaAs PARABOLIC QUANTUM WELL UNDER A UNIFORM MAGNETIC FIELD." International Journal of Nanoscience 08, no. 01n02 (February 2009): 71–74. http://dx.doi.org/10.1142/s0219581x09005736.

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We present a GaAs / AlGaAs -based quantum well device capable of achieving an appreciable spin polarization coupled with high electron transmission. Our numerical results indicate that the device is able to achieve a high spin polarization without the need for less commonly used materials with high g-factors required by previously proposed semiconductor-based systems. The electron transmission and spin polarization amplitude of our structure is found to be robust to the length of the parabolic well, which could ease the fabrication of such structures in practical applications.

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YAO, G. Y., G. H. FAN, J. H. MA, S. W. ZHENG, J. CHEN, S. M. ZENG, L. F. HE, and T. ZHANG. "FERROMAGNETIC PROPERTIES IN V-DOPED AlN FROM FIRST PRINCIPLES." Modern Physics Letters B 26, no. 20 (July 5, 2012): 1250132. http://dx.doi.org/10.1142/s0217984912501321.

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Using the first-principles method based on the density functional theory, we have calculated electronic structure of zinc blende AlN doped with 6.25% of V. The V dopants are found spin polarized and the calculated band structures suggest a 100% polarization of the conduction carriers. The ferromagnetic ground state in V-doped AlN can be explained in terms of double-exchange mechanism, and a Curie temperature above room temperature can be expected. These results suggest that the V-doped AlN may present a promising dilute magnetic semiconductor and find applications in the field of spintronics.

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Mii, T., and H. C. Casey. "Properties of spin-on glass as an insulator for InP metal-insulator-semiconductor structures." Journal of Electronic Materials 19, no. 11 (November 1990): 1281–88. http://dx.doi.org/10.1007/bf02673343.

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41

Sultan, Najib M., Thar M. Badri Albarody, Kingsley Onyebuchi Obodo, and Masri B. Baharom. "Effect of Mn+2 Doping and Vacancy on the Ferromagnetic Cubic 3C-SiC Structure Using First Principles Calculations." Crystals 13, no. 2 (February 17, 2023): 348. http://dx.doi.org/10.3390/cryst13020348.

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Wide bandgap semiconductors doped with transition metals are attracting significant attention in the fabrication of dilute magnetic semiconductor devices (DMSs). The working principle of DMSs is based on the manipulation of the electron spin, which is useful for magnetic memory devices and spintronic applications. Using the density functional theory (DFT) calculation with the GGA+U approximation, we investigated the effect of native defects on the magnetic and electronic structure of Mn+2-doped 3C-SiC structure. Three structures were selected with variations in the distance between two impurities of (Mn+2)-doped 3C-SiC, which are 4.364 Å, 5.345Å, and 6.171 Å, respectively. We found ferromagnetic coupling for single and double Mn+2 dopant atoms in the 3C-SiC structure with magnetic moments of 3 μB and 6 μB respectively. This is due to the double exchange because of p-d orbital hybridization. The p-orbitals of C atoms play important roles in the stability of the ferromagnetic configuration. The impact of Si-vacancy (nearby, far) and C-vacancy (near) of (Mn+2)-doped 3C-SiC plays an important role in the stabilization of AFM due to super-exchange coupling, while the C-vacancy (far) model is stable in FM. All electronic structures of Mn+2-doped 3C-SiC reveal a half-metallic behavior, except for the Si-vacancy and C-vacancy of (nearby), which shows a semiconductor with bandgap of 0.317 and 0.828 eV, respectively. The Curie temperature of (Mn+2)-doped 3C-SiC are all above room temperature. The study shows that native vacancies play a role in tuning the structure from (FM) to (AFM), and this finding is consistent with experiments reported in the literature.

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Strandjord, Andrew, Thorsten Teutsch, Axel Scheffler, Bernd Otto, Anna Paat, Oscar Alinabon, and Jing Li. "Wafer Level Packaging of Compound Semiconductors." Journal of Microelectronics and Electronic Packaging 7, no. 3 (July 1, 2010): 152–59. http://dx.doi.org/10.4071/imaps.263.

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The microelectronics industry has implemented a number of different wafer level packaging (WLP) technologies for high volume manufacturing, including: UBM deposition, solder bumping, wafer thinning, and dicing. These technologies were successfully developed and implemented at a number of contract manufacturing companies, and then licensed to many of the semiconductor manufacturers and foundries. The largest production volumes for these technologies are for silicon-based semiconductors. Continuous improvements and modifications to these WLP processes have made them compatible with the changes observed over the years in silicon semiconductor technologies. These industry changes include: the move from aluminum to copper interconnect metallurgy, increases in wafer size, decreases in pad pitch, and the use of Low-K dielectrics. In contrast, the direct transfer of these WLP technologies to compound semiconductor devices, like GaAs, SiC, InP, GaN, and sapphire; has been limited due to a number of technical compatibility issues, several perceived compatibility issues, and some business concerns From a technical standpoint, many compound semiconductor devices contain fragile air bridges, gold bond pads, topographical cavities and trenches, and have a number of unique bulk material properties which are sensitive to the mechanical and chemical processes associated with the standard WLP operations used for silicon wafers. In addition, most of the newer contract manufacturing companies and foundries have implemented mostly 200 and 300 mm wafer capabilities into their facilities. This limits the number of places that one can outsource the processing of 100 and 150 mm compound semiconductor wafers. Companies that are processing large numbers of silicon based semiconductor wafers at their facilities are reluctant to process many of these compound semiconductors because there is a perceived risk of cross contamination between the different wafer materials. Companies are not willing to risk their current business of processing silicon wafers by introducing these new materials into existing process flows. From a business perspective, many companies are reluctant to take the liability risks associated with some of the very high-value compound semiconductors. In addition, the volumes for many of the compound semiconductor devices are very small compared with silicon based devices, thus making it hard to justify interruption in the silicon wafer flows to accommodate these lower volume products. In spite of these issues and perceptions, the markets for compound semiconductors are expanding. Several high profile examples include the increasing number of frequency and power management devices going into cell phones, light emitting diodes, and solar cells The strategy for the work described in this paper is to protect all structures and surfaces with either a spin-on resist or a laminated film during each step in the process flow. These layers will protect the wafer from mechanical and chemical damage, and at the same time protect the fab from contamination by the compound semiconductor.

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Kopasov, Alexander A., Ivan M. Khaymovich, and Alexander S. Mel'nikov. "Inverse proximity effect in semiconductor Majorana nanowires." Beilstein Journal of Nanotechnology 9 (April 16, 2018): 1184–93. http://dx.doi.org/10.3762/bjnano.9.109.

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We study the influence of the inverse proximity effect on the superconductivity nucleation in hybrid structures consisting of semiconducting nanowires placed in contact with a thin superconducting film and discuss the resulting restrictions on the operation of Majorana-based devices. A strong paramagnetic effect for electrons entering the semiconductor together with spin–orbit coupling and van Hove singularities in the electronic density of states in the wire are responsible for the suppression of superconducting correlations in the low-field domain and for the reentrant superconductivity at high magnetic fields in the topologically nontrivial regime. The growth of the critical temperature in the latter case continues up to the upper critical field destroying the pairing inside the superconducting film due to either orbital or paramagnetic mechanism. The suppression of the homogeneous superconducting state near the boundary between the topological and non-topological regimes provides the conditions favorable for the Fulde–Ferrel–Larkin–Ovchinnikov instability.

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44

Morozova, Maria, and Oleg Matveev. "Resonant and nonlinear phenomena during the propagation of magnetostatic waves in multiferroid, semiconductor and metallized structures based on ferromagnetic films and magnonic crystals." Izvestiya VUZ. Applied Nonlinear Dynamics 30, no. 5 (September 30, 2022): 534–53. http://dx.doi.org/10.18500/0869-6632-003003.

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Purpose of this work is to compile an overview of a new and fruitful scientific direction in magnonics, which grew out of the works of Ph.D., Professor Yuri Pavlovich Sharaevsky, and related to the study of resonant and nonlinear phenomena during the propagation of magnetostatic waves in ferromagnetic films, ferromagnetic films with periodic inhomogeneities (magnonic crystals), coupled (layered and lateral) ferromagnetic structures, as well as ferromagnetic structures with layers of a different physical nature (semiconductor, ferroelectric, piezoelectric, normal metal layers). Methods. Experimental and theoretical methods have been used to study spin-wave excitations in a wide class of structures with ferromagnetic layers. In particular, experimental radiophysical methods of microwave measurements and optical methods of Mandelstam-Brillouin spectroscopy. For the construction of theoretical models, the following methods are used: the method of coupled waves, the method of crosslinking magnetic permeability at the boundaries of layers, the method of transmission matrices, long-wave approximation. Results. The presented results are of general scientific importance for understanding the basic laws of the joint influence of coupling, periodicity and interactions of different physical nature (the influence on the magnetostatic wave of deformation in periodic structures with piezoelectric, electromagnetic wave in structures with ferroelectric, electric current in structures with semiconductor, spin current in structures with normal metal). In applied terms, the identified effects open up wide opportunities for creation of new devices of spin-wave electronics with the possibility of dynamic control of characteristics when changing the electric and magnetic fields, as well as the power of the input signal. Conclusions. The review of the most interesting results obtained by the authors together with Yuri Pavlovich and which are an ideological continuation of the foundations laid by him is given.

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Benhalima, C., S. Amari, L. Beldi, and B. Bouhafs. "First-Principles Study of Ferromagnetism in Iron Chromite Spinels: FeCr2O4 and CrFe2O4." SPIN 09, no. 03 (September 2019): 1950014. http://dx.doi.org/10.1142/s2010324719500140.

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The structural, electronic and magnetic properties of FeCr2O4 and CrFe2O4 spinels have been investigated by the first-principles approach based on density functional theory (DFT) and the full-potential linearized augmented plane-wave method, within the generalized gradient approximation (GGA-PBE) and GGA-[Formula: see text] scheme. The stability of these spinels in the normal and inverse phases is evaluated. The spin-polarized electronic band structures and density of states of FeCr2O4 calculated by GGA-PBE and GGA-[Formula: see text] show that the minority spin channel has metallic nature and the majority spin channel has a half-metallic (HM) gap of 0.25[Formula: see text]eV and 1.30 eV, respectively. CrFe2O4 shows that both minority and majority spin channels have metallic nature when using GGA-PBE and half-semiconducting behavior with half-semiconductor gap of 0.71[Formula: see text]eV when using GGA-[Formula: see text], with magnetic moment of 2[Formula: see text][Formula: see text] per formula unit. Analysis of density of states of these compounds indicates that the magnetic moment mainly originates from the strong spin-polarization of 3[Formula: see text] states of Fe and Cr atoms. Presence of HMF in FeCr2O4 and CrFe2O4 spinels makes these compounds promising compounds for spintronic applications.

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46

Germanenko, A. V., V. V. Kruzhaev, G. M. Minkov, E. L. Rumyantsev, and O. E. Rut. "Spin-polarised tunnelling current in metal-insulator-gapless semiconductor structures in a magnetic field." Advanced Materials for Optics and Electronics 3, no. 1-6 (January 1994): 127–30. http://dx.doi.org/10.1002/amo.860030118.

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47

Chen, Shaobo, Ying Chen, Wanjun Yan, Shiyun Zhou, Xinmao Qin, Wen Xiong, and Li Liu. "Electronic and Magnetic Properties of Bulk and Monolayer CrSi2: A First-Principle Study." Applied Sciences 8, no. 10 (October 11, 2018): 1885. http://dx.doi.org/10.3390/app8101885.

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We investigated the electronic and magnetic properties of bulk and monolayer CrSi2 using first-principle methods based on spin-polarized density functional theory. The phonon dispersion, electronic structures, and magnetism of bulk and monolayer CrSi2 were scientifically studied. Calculated phonon dispersion curves indicated that both bulk and monolayer CrSi2 were structurally stable. Our calculations revealed that bulk CrSi2 was an indirect gap nonmagnetic semiconductor, with 0.376 eV band gap. However, monolayer CrSi2 had metallic and ferromagnetic (FM) characters. Both surface and confinement effects played an important role in the metallic behavior of monolayer CrSi2. In addition, we also calculated the magnetic moment of unit cell of 2D multilayer CrSi2 nanosheets with different layers. The results showed that magnetism of CrSi2 nanosheets was attributed to band energy between layers, quantum size, and surface effects.

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48

Fujita, Takashi, Mansoor B. A. Jalil, and Seng Ghee Tan. "Achieving Highly Localized Effective Magnetic Fields With Non-Uniform Rashba Spin-Orbit Coupling for Tunable Spin Current in Metal/Semiconductor/Metal Structures." IEEE Transactions on Magnetics 46, no. 6 (June 2010): 1323–26. http://dx.doi.org/10.1109/tmag.2010.2045478.

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49

Kumar, Ravindra, Ajay Kumar Rakesh, Anil Govindan, and Neeraj K. Jaiswal. "Spin dependent Electronic properties of NO-adsorbed zigzag ZnO nanoribbons: A DFT Study." IOP Conference Series: Materials Science and Engineering 1248, no. 1 (July 1, 2022): 012030. http://dx.doi.org/10.1088/1757-899x/1248/1/012030.

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Abstract Exploring novel nano-materials for designing the robust and efficient sensors is an area of immense potential. In the present work, we study the adsorption of NO molecules at the edges of zigzag ZnO nanoribbons (zZnONR). The adsorption of NO molecules was modelled at the edges of zZnONR in different possibilities. It is well known that pristine (H-passivated) zZnONR is a semi-conducting material. Present calculations reveal that NO-adsorption takes place via N-side and a semiconductor to metallic-transition is also witnessed in all configurations. The obtained adsorption energies are found to vary between -4.10 eV to -7.04 eV ensuring the exothermic nature of the adsorption process and energetic feasibility of the considered configurations. Interestingly, all the considered structures (with NO adsorption) prefer magnetic ground state in contrast to previously reported non-magnetic behaviour of pristine zZnONR. Furthermore, NO adsorption at both the edges makes the structure half-metallic. In contrast, rest of the two-configurations are pure metallic. Present findings indicate that zZnONR could play a vital role towards NO detection as well realizing the spintronic properties for other various other technological applications.

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Krstajić, P. M., M. Pagano, and P. Vasilopoulos. "Transport properties of low-dimensional semiconductor structures in the presence of spin–orbit interaction." Physica E: Low-dimensional Systems and Nanostructures 43, no. 4 (February 2011): 893–900. http://dx.doi.org/10.1016/j.physe.2010.11.008.

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