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Journal articles on the topic 'Electronic semiconductor'

Author: Grafiati
Published: 6 September 2023

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1

Choi, Junhwan, and Hocheon Yoo. "Combination of Polymer Gate Dielectric and Two-Dimensional Semiconductor for Emerging Field-Effect Transistors." Polymers 15, no. 6 (March 10, 2023): 1395. http://dx.doi.org/10.3390/polym15061395.

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Two-dimensional (2D) materials are considered attractive semiconducting layers for emerging field-effect transistors owing to their unique electronic and optoelectronic properties. Polymers have been utilized in combination with 2D semiconductors as gate dielectric layers in field-effect transistors (FETs). Despite their distinctive advantages, the applicability of polymer gate dielectric materials for 2D semiconductor FETs has rarely been discussed in a comprehensive manner. Therefore, this paper reviews recent progress relating to 2D semiconductor FETs based on a wide range of polymeric gate dielectric materials, including (1) solution-based polymer dielectrics, (2) vacuum-deposited polymer dielectrics, (3) ferroelectric polymers, and (4) ion gels. Exploiting appropriate materials and corresponding processes, polymer gate dielectrics have enhanced the performance of 2D semiconductor FETs and enabled the development of versatile device structures in energy-efficient ways. Furthermore, FET-based functional electronic devices, such as flash memory devices, photodetectors, ferroelectric memory devices, and flexible electronics, are highlighted in this review. This paper also outlines challenges and opportunities in order to help develop high-performance FETs based on 2D semiconductors and polymer gate dielectrics and realize their practical applications.
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Alivisatos, A. Paul. "Semiconductor Nanocrystals." MRS Bulletin 20, no. 8 (August 1995): 23–32. http://dx.doi.org/10.1557/s0883769400045073.

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The following is an edited transcript of the presentation given by A. Paul Alivisatos, recipient of the Outstanding Young Investigator Award, at the 1995 MRS Spring Meeting in San Francisco.The work I will describe on semiconductor nanocrystals started with the realization that it is possible to precipitate a semiconductor out of an organic liquid. We can precipitate out a semiconductor as a colloid—a very small-sized semiconductor with reduced dimensionality—that will show large, quantum size effects. A dream at that time was to make an electronic material by such a process in a liquid beaker, by starting with an organic fluid and somehow injecting something into the fluid to make very small particles, which we could use in electronics. The materials we use in electronics today have perfect crystalline order. We are able to put in dopants very specifically, or control precisely their arrangements in space in enormously complicated ways. The level of purity of electronic materials is so high that making an electronic material in a wet chemistry approach seems almost impossible. If, in addition, we specify that the size must be controlled precisely, we recognize the project is a problem for basic research, yet not one ready for applications. Many fundamental problems arise if we try to make semiconductor particles, in a liquid, of such high quality that they can be used as electronic materials.
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Chi, Zeyu, Jacob J. Asher, Michael R. Jennings, Ekaterine Chikoidze, and Amador Pérez-Tomás. "Ga2O3 and Related Ultra-Wide Bandgap Power Semiconductor Oxides: New Energy Electronics Solutions for CO2 Emission Mitigation." Materials 15, no. 3 (February 2, 2022): 1164. http://dx.doi.org/10.3390/ma15031164.

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Currently, a significant portion (~50%) of global warming emissions, such as CO2, are related to energy production and transportation. As most energy usage will be electrical (as well as transportation), the efficient management of electrical power is thus central to achieve the XXI century climatic goals. Ultra-wide bandgap (UWBG) semiconductors are at the very frontier of electronics for energy management or energy electronics. A new generation of UWBG semiconductors will open new territories for higher power rated power electronics and solar-blind deeper ultraviolet optoelectronics. Gallium oxide—Ga2O3 (4.5–4.9 eV), has recently emerged pushing the limits set by more conventional WBG (~3 eV) materials, such as SiC and GaN, as well as for transparent conducting oxides (TCO), such asIn2O3, ZnO and SnO2, to name a few. Indeed, Ga2O3 as the first oxide used as a semiconductor for power electronics, has sparked an interest in oxide semiconductors to be investigated (oxides represent the largest family of UWBG). Among these new power electronic materials, AlxGa1-xO3 may provide high-power heterostructure electronic and photonic devices at bandgaps far beyond all materials available today (~8 eV) or ZnGa2O4 (~5 eV), enabling spinel bipolar energy electronics for the first time ever. Here, we review the state-of-the-art and prospects of some ultra-wide bandgap oxide semiconductor arising technologies as promising innovative material solutions towards a sustainable zero emission society.
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Valentine, Nathan, Diganta Das, Bhanu Sood, and Michael Pecht. "Failure Analyses of Modern Power Semiconductor Switching Devices." International Symposium on Microelectronics 2015, no. 1 (October 1, 2015): 000690–95. http://dx.doi.org/10.4071/isom-2015-tha56.

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Power semiconductor switches such as Power Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) and Insulated Gate Bipolar Transistors (IGBTs) continue to be a leading cause of failure in power electronics systems. With the continued expansion of the power electronics market, reliable switching devices are of utmost importance in maintaining reliable operation of high power electronic systems. An overview of the failure mechanisms of power semiconductor switches identified by two failure analyses at CALCE is presented. The specific applications of power semiconducting switches have a wide range and include semiconductors found in converters for AC/DC power supplies and home appliance motor control board. All observed failures were from devices which experienced a short circuit between the collector and emitter terminals. The causes of the failures are hypothesized to be a combination of manufacturing defects and poor thermal management.
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5

SAPRA, SAMEER, RANJANI VISWANATHA, and D. D. SARMA. "ELECTRONIC STRUCTURE OF SEMICONDUCTOR NANOCRYSTALS: AN ACCURATE TIGHT-BINDING DESCRIPTION." International Journal of Nanoscience 04, no. 05n06 (October 2005): 893–99. http://dx.doi.org/10.1142/s0219581x05003851.

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We report a quantitatively accurate description of the electronic structure of semiconductor nanocrystals using the sp3d5 orbital basis with the nearest neighbor and the next nearest neighbor interactions. The use of this model for II–VI and III–V semiconductors is reviewed in article. The excellent agreement of the theoretical predictions with the experimental results establishes the feasibility of using this model for semiconductor nanocrystals.
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Nakayama, Yasuo, Ryohei Tsuruta, and Tomoyuki Koganezawa. "‘Molecular Beam Epitaxy’ on Organic Semiconductor Single Crystals: Characterization of Well-Defined Molecular Interfaces by Synchrotron Radiation X-ray Diffraction Techniques." Materials 15, no. 20 (October 13, 2022): 7119. http://dx.doi.org/10.3390/ma15207119.

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Epitaxial growth, often termed “epitaxy”, is one of the most essential techniques underpinning semiconductor electronics, because crystallinities of the materials seriously dominate operation efficiencies of the electronic devices such as power gain/consumption, response speed, heat loss, and so on. In contrast to already well-established epitaxial growth methodologies for inorganic (covalent or ionic) semiconductors, studies on inter-molecular (van der Waals) epitaxy for organic semiconductors is still in the initial stage. In the present review paper, we briefly summarize recent works on the epitaxial inter-molecular junctions built on organic semiconductor single-crystal surfaces, particularly on single crystals of pentacene and rubrene. Experimental methodologies applicable for the determination of crystal structures of such organic single-crystal-based molecular junctions are also illustrated.
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7

Klimm, Detlef. "Electronic materials with a wide band gap: recent developments." IUCrJ 1, no. 5 (August 29, 2014): 281–90. http://dx.doi.org/10.1107/s2052252514017229.

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The development of semiconductor electronics is reviewed briefly, beginning with the development of germanium devices (band gapEg= 0.66 eV) after World War II. A tendency towards alternative materials with wider band gaps quickly became apparent, starting with silicon (Eg= 1.12 eV). This improved the signal-to-noise ratio for classical electronic applications. Both semiconductors have a tetrahedral coordination, and by isoelectronic alternative replacement of Ge or Si with carbon or various anions and cations, other semiconductors with widerEgwere obtained. These are transparent to visible light and belong to the group of wide band gap semiconductors. Nowadays, some nitrides, especially GaN and AlN, are the most important materials for optical emission in the ultraviolet and blue regions. Oxide crystals, such as ZnO and β-Ga2O3, offer similarly good electronic properties but still suffer from significant difficulties in obtaining stable and technologically adequatep-type conductivity.
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8

Ngai, J. H., K. Ahmadi-Majlan, J. Moghadam, M. Chrysler, D. P. Kumah, C. H. Ahn, F. J. Walker, et al. "Electrically Coupling Multifunctional Oxides to Semiconductors: A Route to Novel Material Functionalities." MRS Advances 1, no. 4 (2016): 255–63. http://dx.doi.org/10.1557/adv.2016.101.

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ABSTRACTComplex oxides and semiconductors exhibit distinct yet complementary properties owing to their respective ionic and covalent natures. By electrically coupling oxides to semiconductors within epitaxial heterostructures, enhanced or novel functionalities beyond those of the constituent materials can potentially be realized. Key to electrically coupling oxides to semiconductors is controlling the physical and electronic structure of semiconductor – crystalline oxide heterostructures. Here we discuss how composition of the oxide can be manipulated to control physical and electronic structure in Ba1-xSrxTiO3/ Ge and SrZrxTi1-xO3/Ge heterostructures. In the case of the former we discuss how strain can be engineered through composition to enable the re-orientable ferroelectric polarization to be coupled to carriers in the semiconductor. In the case of the latter we discuss how composition can be exploited to control the band offset at the semiconductor - oxide interface. The ability to control the band offset, i.e. band-gap engineering, provides a pathway to electrically couple crystalline oxides to semiconductors to realize a host of functionalities.
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9

Brillson, Leonard, Jonathan Cox, Hantian Gao, Geoffrey Foster, William Ruane, Alexander Jarjour, Martin Allen, David Look, Holger von Wenckstern, and Marius Grundmann. "Native Point Defect Measurement and Manipulation in ZnO Nanostructures." Materials 12, no. 14 (July 12, 2019): 2242. http://dx.doi.org/10.3390/ma12142242.

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This review presents recent research advances in measuring native point defects in ZnO nanostructures, establishing how these defects affect nanoscale electronic properties, and developing new techniques to manipulate these defects to control nano- and micro- wire electronic properties. From spatially-resolved cathodoluminescence spectroscopy, we now know that electrically-active native point defects are present inside, as well as at the surfaces of, ZnO and other semiconductor nanostructures. These defects within nanowires and at their metal interfaces can dominate electrical contact properties, yet they are sensitive to manipulation by chemical interactions, energy beams, as well as applied electrical fields. Non-uniform defect distributions are common among semiconductors, and their effects are magnified in semiconductor nanostructures so that their electronic effects are significant. The ability to measure native point defects directly on a nanoscale and manipulate their spatial distributions by multiple techniques presents exciting possibilities for future ZnO nanoscale electronics.
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10

Su, Xiao-Qian, and Xue-Feng Wang. "Electronic and Spintronic Properties of Armchair MoSi2N4 Nanoribbons Doped by 3D Transition Metals." Nanomaterials 13, no. 4 (February 9, 2023): 676. http://dx.doi.org/10.3390/nano13040676.

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Structural and physical properties of armchair MoSi2N4 nanoribbons substitutionally doped by 3d transition metals (TM) at Mo sites are investigated using the density functional theory combined with the non-equilibrium Green’s function method. TM doping can convert the nonmagnetic direct semiconductor into device materials of a broad variety, including indirect semiconductors, half semiconductors, metals, and half metals. Furthermore the 100% spin filtering behavior in spin-up and spin-down half metals, a negative differential resistance with peak-to-valley ratio over 140 and a rectification effect with ratio over 130 are predicted, as well as semiconductor behavior with high spin polarization.
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11

MAJIDI, ROYA. "EFFECT OF DOPING ON THE ELECTRONIC PROPERTIES OF GRAPHYNE." Nano 08, no. 06 (November 18, 2013): 1350060. http://dx.doi.org/10.1142/s1793292013500604.

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We have used density functional theory to study the effect of doping on the electronic properties of graphyne. The graphyne with alpha type has been considered since it is analogous to graphene. The electronic properties of graphynes containing B , N or O impurity have been compared with those of pure graphyne. It is found that the electronic properties of alpha graphyne change from semimetal to semiconductor by doping. The B -doped graphyne becomes a p-type semiconductor, while N -doped and O -doped graphynes are n-type semiconductors. Our results provide possibility of opening an energy gap in graphyne as required for fabricating high-performance nanoelectronic devices based on graphyne.
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12

Al-Mumen, Haider Sahib. "Flexible Field effect transistor construction techniques, a brief review." Al-Qadisiyah Journal for Engineering Sciences 14, no. 2 (July 19, 2021): 117–22. http://dx.doi.org/10.30772/qjes.v14i2.753.

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Since Flexible field effect transistor (F-FET) is the building block of any sophisticated electronic circuit, particularly in the area of wearable electronics and biomedical sensors, it has drawn a lot of attention recently. It is usually fabricated using stretchable semiconductors over polymeric substrates. This paper displays a brief overview of the current fabrication techniques of the F-FET, specifically in terms of type of substrates and nano semiconductor technologies.
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13

Dang, Chaoqun, Anliang Lu, Heyi Wang, Hongti Zhang, and Yang Lu. "Diamond semiconductor and elastic strain engineering." Journal of Semiconductors 43, no. 2 (February 1, 2022): 021801. http://dx.doi.org/10.1088/1674-4926/43/2/021801.

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Abstract Diamond, as an ultra-wide bandgap semiconductor, has become a promising candidate for next-generation microelectronics and optoelectronics due to its numerous advantages over conventional semiconductors, including ultrahigh carrier mobility and thermal conductivity, low thermal expansion coefficient, and ultra-high breakdown voltage, etc. Despite these extraordinary properties, diamond also faces various challenges before being practically used in the semiconductor industry. This review begins with a brief summary of previous efforts to model and construct diamond-based high-voltage switching diodes, high-power/high-frequency field-effect transistors, MEMS/NEMS, and devices operating at high temperatures. Following that, we will discuss recent developments to address scalable diamond device applications, emphasizing the synthesis of large-area, high-quality CVD diamond films and difficulties in diamond doping. Lastly, we show potential solutions to modulate diamond’s electronic properties by the “elastic strain engineering” strategy, which sheds light on the future development of diamond-based electronics, photonics and quantum systems.
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14

Masri, Pierre. "Electronic structure of semiconductor-metal-semiconductor heterostructures." Applied Surface Science 56-58 (January 1992): 363–69. http://dx.doi.org/10.1016/0169-4332(92)90257-x.

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15

BRATANOVSKII, Sergei, Yerdos AMANKULOV, and Ilya MEDVEDEV. "MULTI-POINTED FIELD-EMISSION CATHODE AS A GENERATOR OF HIGHFREQUENCY OSCILLATIONS." Periódico Tchê Química 17, no. 36 (December 20, 2020): 542–53. http://dx.doi.org/10.52571/ptq.v17.n36.2020.557_periodico36_pgs_542_553.pdf.

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Semiconductor field-emission cathodes have gained considerable popularity in modern radio electronics and electronic optics due to the high-power generation of the electron beam in the external electric field at temperatures close to the room ones. However, their wide application is restricted by the high dependence of the electron emission current on the value of the applied field and geometrical parameters of the cathode. This study aimed to examine the effect of resonance processes on amplifying the field emission of the multi-pointed semiconductor cathode. Modeling the behavior of resonant tunneling of electrons from semiconductors to vacuum was simulated by solving the one-dimensional Schrodinger’s equation, and the amplification due to resonant processes was estimated. The modeling results showed that as the electric field increases, the resonance conditions shift towards low energy levels. With the increase in the width of the barrier for the electron inside the solid body, the resonance conditions shift towards higher energies. It has been established that in onedimensional semiconductors with electrons of low conductivity width, the resonant energy coincides with the Fermi level. These cathode properties are optimal for amplifying the emission current and reducing failures of vacuum electronic devices based on semiconductive field cathodes. The proposed technique can be used to study the regularities of emission amplification due to resonant processes in multipoint semiconductor cathodes with multilayered structure and with metal tips.
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16

Capasso, Federico. "Bandgap and Interface Engineering for Advanced Electronic and Photonic Devices." MRS Bulletin 16, no. 6 (June 1991): 23–29. http://dx.doi.org/10.1557/s0883769400056700.

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During the last decade a powerful new approach for designing semiconductor structures with tailored electronic and optical properties, bandgap engineering, has spawned a new generation of electronic and photonic devices. Central to bandgap engineering is the notion that by spatially varying the composition and the doping of a semiconductor over distances ranging from a few microns down to ~2.5 Å (~1 monolayer), one can tailor the band structure of a material in a nearly arbitrary and continuous way. Thus semiconductor structures with new electronic and optical properties can be custom-designed for specific applications.The enabling technology which has made bandgap engineering an exciting reality with far reaching implications for science and technology is molecular beam epitaxy (MBE), pioneered by Cho and Arthur in the late 1960s.In the subsequent decade MBE demonstrated jts ability to create ultra-thin (10–100 Å) layers and atomically abrupt interfaces between two different semiconductors (heterojunctions).
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17

Gesevičius, Donatas, Antonia Neels, Léo Duchêne, Erwin Hack, Jakob Heier, and Frank Nüesch. "Physical vapour deposition of cyanine salts and their first application in organic electronic devices." Journal of Materials Chemistry C 7, no. 2 (2019): 414–23. http://dx.doi.org/10.1039/c8tc05286g.

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18

Fortunato, Elvira, Alexandra Gonçalves, António Marques, Ana Pimentel, Pedro Barquinha, Hugo Águas, Luís Pereira, et al. "Multifunctional Thin Film Zinc Oxide Semiconductors: Application to Electronic Devices." Materials Science Forum 514-516 (May 2006): 3–7. http://dx.doi.org/10.4028/www.scientific.net/msf.514-516.3.

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In this paper we report some of the recent advances in transparent thin film oxide semiconductors, specifically zinc oxide (ZnO), produced by rf magnetron sputtering at room temperature with multifunctional properties. By controlling the deposition parameters it is possible to produce undoped material with electronic semiconductor properties or by doping it to get either n-type or p-type semiconductor behavior. In this work we refer our experience in producing n-type doping ZnO as transparent electrode to be used in optoelectronic applications such as solar cells and position sensitive detectors while the undoped ZnO can be used as UV photodetector or ozone gas sensor or even as active layer of fully transparent thin film transistors.
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19

Tonkoshkur, A. S., A. B. Glot, and A. V. Ivanchenko. "Basic models in dielectric spectroscopy of heterogeneous materials with semiconductor inclusions." Multidiscipline Modeling in Materials and Structures 13, no. 1 (June 12, 2017): 36–57. http://dx.doi.org/10.1108/mmms-08-2016-0037.

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Purpose The purpose of this paper is to develop the models of the dielectric permittivity dispersion of heterogeneous systems based on semiconductors to a level that would allow to apply effectively the method of broadband dielectric spectroscopy for the study of electronic processes in ceramic and composite materials. Design/methodology/approach The new approach for determining the complex dielectric permittivity of heterogeneous systems with semiconductor particles is used. It includes finding the analytical expression of the effective dielectric permittivity of the separate semiconductor particle of spherical shape. This approach takes into account the polarization of the free charge carriers in this particle, including capturing to localized electron states. This enabled the authors to use the known equations for complex dielectric permittivity of two-component matrix systems and statistical mixtures. Findings The presented dispersion equations establish the relationship between the parameters of the dielectric spectrum and electronic processes in the structures like semiconductor particles in a dielectric matrix in a wide frequency range. Conditions of manifestation and location of the different dispersion regions of the complex dielectric heterogeneous systems based on semiconductors in the frequency axis and their features are established. The most high-frequency dispersion region corresponds to the separation of free charge carriers at polarization. After this region in the direction of reducing of the frequency, the dispersion regions caused by recharge bulk and/or surface localized states follow. The most low-frequency dispersion region is caused by recharging electron traps in the boundary layer of the dielectric matrix. Originality/value Dielectric dispersion models are developed that are associated with: electronic processes of separation of free charge carriers in the semiconductor component, recapture of free charge carriers in the localized electronic states in bulk and on the surface of the semiconductor and also boundary layers of the dielectric at the polarization. The authors have analyzed to situations that correspond applicable and promising materials: varistor ceramics and composite structure with conductive and semiconductor fillers. The modelling results correspond to the existing level of understanding of the electron phenomena in matrix systems and statistical mixtures based on semiconductors. It allows to raise efficiency of research and control properties of heterogeneous materials by dielectric spectroscopy.
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20

Wang, Xue Yan, Jian Bang Zheng, Xiao Jiang Li, and Chong De Cao. "Intrinsic Electronic Structures and Optical Anisotropy of α- and β-Phase Copper Phthalocyanine Molecular Crystals." Applied Mechanics and Materials 864 (April 2017): 133–41. http://dx.doi.org/10.4028/www.scientific.net/amm.864.133.

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Electronic structures and optical anisotropy of α- and β-phase copper phthalocyanine (CuPc) molecular crystals have been systemically investigated by first-principles calculations based on Density Functional Theory (DFT). Both crystals were shown to be small gap organic semiconductors with relatively flat and dispersionless bands. The α-CuPc was a direct band gap semiconductor, whereas the β-CuPc was an indirect band gap semiconductor. The analysis of Partial Density of States (PDOS) showed that the top of valance band was mainly contributed by N 2p and C 2p states; the bottom of the conduction band was mainly contributed by N 2p, C 2p and Cu 3d states. The interband optical properties, such as the complex dielectric function, absorption coefficient and complex refractive index, showed a high degree of anisotropy that can be traced to the unique structures of these molecular crystals. The calculated dielectric function for α-CuPc in the low energy region was consistent with the experiment results proposed in the literature. These calculations provided particular interpretations on electronic structure and optical properties of α- and β-CuPc organic semiconductors that were critical to optoelectronics, which would promote the applications of these materials in semiconductor optoelectronic devices.
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21

Chen, Cheng, Meixiao Wang, Jinxiong Wu, Huixia Fu, Haifeng Yang, Zhen Tian, Teng Tu, et al. "Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi2O2Se." Science Advances 4, no. 9 (September 2018): eaat8355. http://dx.doi.org/10.1126/sciadv.aat8355.

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Semiconductors are essential materials that affect our everyday life in the modern world. Two-dimensional semiconductors with high mobility and moderate bandgap are particularly attractive today because of their potential application in fast, low-power, and ultrasmall/thin electronic devices. We investigate the electronic structures of a new layered air-stable oxide semiconductor, Bi2O2Se, with ultrahigh mobility (~2.8 × 105cm2/V⋅s at 2.0 K) and moderate bandgap (~0.8 eV). Combining angle-resolved photoemission spectroscopy and scanning tunneling microscopy, we mapped out the complete band structures of Bi2O2Se with key parameters (for example, effective mass, Fermi velocity, and bandgap). The unusual spatial uniformity of the bandgap without undesired in-gap states on the sample surface with up to ~50% defects makes Bi2O2Se an ideal semiconductor for future electronic applications. In addition, the structural compatibility between Bi2O2Se and interesting perovskite oxides (for example, cuprate high–transition temperature superconductors and commonly used substrate material SrTiO3) further makes heterostructures between Bi2O2Se and these oxides possible platforms for realizing novel physical phenomena, such as topological superconductivity, Josephson junction field-effect transistor, new superconducting optoelectronics, and novel lasers.
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Liu, Yi-Fan, and Zhi-Yong Zhang. "Carbon based electronic technology in post-Moore era: progress, applications and challenges." Acta Physica Sinica 71, no. 6 (2022): 068503. http://dx.doi.org/10.7498/aps.71.20212076.

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In the past 60 years, silicon-based semiconductor technology has triggered off the profound change of our information society, but it is also gradually approaching to the physical limit and engineering limit as well. Thus, the global semiconductor industry has entered into the post-Moore era. Carbon nanotube has many excellent electronic properties such as high mobility and ultra-thin body, so it has become a hopeful candidate for the new semiconductor material in the post-Moore era. After more than 20 years of development, carbon based electronic technology has made fundamental breakthroughs in many basic problems such as material preparation, Ohmic metal-semiconductor contact and gate engineering. In principle, there is no insurmountable obstacle in its industrialization process now. Therefore, in this paper the intrinsic advantages of carbon based electronic technology in the post-Moore era is introduced, the basic problems, progress and optimization direction of carbon based electronic technology are summarized, the application prospects in the fields of digital circuits, radio frequency electronics, sensing and detection, three-dimensional integration and chips for special applications are presented. Finally, the comprehensive challenges to the industrialization of carbon based electronic technology are analyzed, and its future development is also prospected.
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Gao, Xiangxiang, Hai-Yang Liu, Jincheng Zhang, Jian Zhu, Jingjing Chang, and Yue Hao. "Thin-Film Transistors from Electrochemically Exfoliated In2Se3 Nanosheets." Micromachines 13, no. 6 (June 16, 2022): 956. http://dx.doi.org/10.3390/mi13060956.

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The wafer-scale fabrication of two-dimensional (2D) semiconductor thin films is the key to the preparation of large-area electronic devices. Although chemical vapor deposition (CVD) solves this problem to a certain extent, complex processes are required to realize the transfer of thin films from the growth substrate to the device substrate, not to mention its harsh reaction conditions. The solution-based synthesis and assembly of 2D semiconductors could realize the large-scale preparation of 2D semiconductor thin films economically. In this work, indium selenide (In2Se3) nanosheets with uniform sizes and thicknesses were prepared by the electrochemical intercalation of quaternary ammonium ions into bulk crystals. Layer-by-layer (LbL) assembly was used to fabricate scalable and uniform In2Se3 thin films by coordinating In2Se3 with poly(diallyldimethylammonium chloride) (PDDA). Field-effect transistors (FETs) made from a single In2Se3 flake and In2Se3 thin films showed mobilities of 12.8 cm2·V−1·s−1 and 0.4 cm2·V−1·s−1, respectively, and on/off ratios of >103. The solution self-assembled In2Se3 thin films enriches the research on wafer-scale 2D semiconductor thin films for electronics and optoelectronics and has broad prospects in high-performance and large-area flexible electronics.
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Batstone, J. L. "Structural and electronic properties of defects in semiconductors." Proceedings, annual meeting, Electron Microscopy Society of America 53 (August 13, 1995): 4–5. http://dx.doi.org/10.1017/s0424820100136398.

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The development of growth techniques such as metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy during the last fifteen years has resulted in the growth of high quality epitaxial semiconductor thin films for the semiconductor device industry. The III-V and II-VI semiconductors exhibit a wide range of fundamental band gap energies, enabling the fabrication of sophisticated optoelectronic devices such as lasers and electroluminescent displays. However, the radiative efficiency of such devices is strongly affected by the presence of optically and electrically active defects within the epitaxial layer; thus an understanding of factors influencing the defect densities is required.Extended defects such as dislocations, twins, stacking faults and grain boundaries can occur during epitaxial growth to relieve the misfit strain that builds up. Such defects can nucleate either at surfaces or thin film/substrate interfaces and the growth and nucleation events can be determined by in situ transmission electron microscopy (TEM).
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Hersam, M. C., and R. G. Reifenberger. "Charge Transport through Molecular Junctions." MRS Bulletin 29, no. 6 (June 2004): 385–90. http://dx.doi.org/10.1557/mrs2004.120.

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AbstractIn conventional solid-state electronic devices, junctions and interfaces play a significant if not dominant role in controlling charge transport. Although the emerging field of molecular electronics often focuses on the properties of the molecule in the design and understanding of device behavior, the effects of interfaces and junctions are often of comparable importance. This article explores recent work in the study of metal–molecule–metal and semiconductor–molecule–metal junctions. Specific issues include the mixing of discrete molecular levels with the metal continuum, charge transfer between molecules and semiconductors, electron-stimulated desorption, and resonant tunneling. By acknowledging the consequences of junction/interface effects, realistic prospects and limitations can be identified for molecular electronic devices.
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Kim, Kyunghun, Hocheon Yoo, and Eun Kwang Lee. "New Opportunities for Organic Semiconducting Polymers in Biomedical Applications." Polymers 14, no. 14 (July 21, 2022): 2960. http://dx.doi.org/10.3390/polym14142960.

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The life expectancy of humans has been significantly elevated due to advancements in medical knowledge and skills over the past few decades. Although a lot of knowledge and skills are disseminated to the general public, electronic devices that quantitatively diagnose one’s own body condition still require specialized semiconductor devices which are huge and not portable. In this regard, semiconductor materials that are lightweight and have low power consumption and high performance should be developed with low cost for mass production. Organic semiconductors are one of the promising materials in biomedical applications due to their functionalities, solution-processability and excellent mechanical properties in terms of flexibility. In this review, we discuss organic semiconductor materials that are widely utilized in biomedical devices. Some advantageous and unique properties of organic semiconductors compared to inorganic semiconductors are reviewed. By critically assessing the fabrication process and device structures in organic-based biomedical devices, the potential merits and future aspects of the organic biomedical devices are pinpointed compared to inorganic devices.
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Park, Do-Joon, and Shuzhi Liu. "A Study on the Economic Effects of U.S. Export Controls on Semiconductors to China." Korea International Trade Research Institute 19, no. 1 (February 28, 2023): 129–42. http://dx.doi.org/10.16980/jitc.19.1.202302.129.

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Purpose – This study addresses the development of China’s semiconductor industry in the context of the U.S.-China trade conflict, and analyzes the impact on other industries. Design/Methodology/Approach – Based on the multi-regional input-output table industry splitting method, the electrical and electronic equipment manufacturing industry in the Asian Development Bank’s multi-regional input-output table (ADB-MRIO, 2019) is split into semiconductor and non-semiconductor industries, and the impact of U.S. export controls on China’s semiconductor exports on domestic and foreign economies is simulated and analyzed using the hypothesis extraction and hypothesis expansion methods. Findings – The United States has suffered more than China from US export controls on semiconductors to China, and the impact of U.S. export controls on U.S. GDP decreasing by at most 0.0124‰, and China’s GDP decreasing by at most 0.00089‰. Since Japan, Korea, and European countries have become China’s semiconductor import substitutes, they all benefit from U.S. export controls on China. Second, the most affected industries in China are the chemical products, metal products, wholesale, financial, and non-semiconductor industries in the electrical and electronic equipment manufacturing industry. Research Implications – China should adopt coping strategies such as deepening international exchanges, enhancing communication between China and the U.S., and strengthening its scientific and technological strength.
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28

Zhang, Xinan, Binghao Wang, Lizhen Huang, Wei Huang, Zhi Wang, Weigang Zhu, Yao Chen, YanLi Mao, Antonio Facchetti, and Tobin J. Marks. "Breath figure–derived porous semiconducting films for organic electronics." Science Advances 6, no. 13 (March 2020): eaaz1042. http://dx.doi.org/10.1126/sciadv.aaz1042.

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Porous semiconductor film morphologies facilitate fluid diffusion and mass transport into the charge-carrying layers of diverse electronic devices. Here, we report the nature-inspired fabrication of several porous organic semiconductor-insulator blend films [semiconductor: P3HT (p-type polymer), C8BTBT (p-type small-molecule), and N2200 (n-type polymer); insulator: PS] by a breath figure patterning method and their broad and general applicability in organic thin-film transistors (OTFTs), gas sensors, organic electrochemical transistors (OECTs), and chemically doped conducting films. Detailed morphological analysis of these films demonstrates formation of textured layers with uniform nanopores reaching the bottom substrate with an unchanged solid-state packing structure. Device data gathered with both porous and dense control semiconductor films demonstrate that the former films are efficient TFT semiconductors but with added advantage of enhanced sensitivity to gases (e.g., 48.2%/ppm for NO2 using P3HT/PS), faster switching speeds (4.7 s for P3HT/PS OECTs), and more efficient molecular doping (conductivity, 0.13 S/m for N2200/PS).
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29

Huberman, M. L., and J. Maserjian. "Electronic states of semiconductor-metal-semiconductor quantum-well structures." Physical Review B 37, no. 15 (May 15, 1988): 9065–68. http://dx.doi.org/10.1103/physrevb.37.9065.

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30

Huberman, M. L., and J. Maserjian. "Electronic states of semiconductor/metal/semiconductor quantum well structures." Superlattices and Microstructures 4, no. 4-5 (January 1988): 555–58. http://dx.doi.org/10.1016/0749-6036(88)90237-6.

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31

Kraus, Tobias. "Electronic Multiscale Hybrid Materials: Sinter-Free Inks, Printed Transparent Grids, and Soft Devices." Proceedings 56, no. 1 (December 18, 2020): 24. http://dx.doi.org/10.3390/proceedings2020056024.

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Hybrid electronic materials combine the excellent electronic properties of metals and semiconductors with the mechanical flexibility, ease of processing, and optical transparency of polymers. This talk will discuss hybrids that combine organic and inorganic components at different scales. Metallic and semiconductor nanoparticle cores are coated with conductive polymer shells to create “hybrid inks” that can be inkjet-printed and form conductive leads without any sintering step. Transparent electrodes are printed using ultrathin metal nanowires with core diameters below 2 nm. The chemically synthesized wires spontaneously form percolating structures when patterned with a soft stamp; this rapidly yields optically transparent grid electrodes, even on demanding soft substrates. These new hybrid electronic materials enable the fabrication of soft electronics, including flexible sensors on polymer foils, radio-frequency identification (RFID) antennae on cardboard, and soft human–machine interfaces. Selected devices will be covered at the end of the talk.
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32

Bastard, G., and J. Brum. "Electronic states in semiconductor heterostructures." IEEE Journal of Quantum Electronics 22, no. 9 (September 1986): 1625–44. http://dx.doi.org/10.1109/jqe.1986.1073186.

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33

Mendez, E. "Electronic mobility in semiconductor heterostructures." IEEE Journal of Quantum Electronics 22, no. 9 (September 1986): 1720–27. http://dx.doi.org/10.1109/jqe.1986.1073191.

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34

Voon, L. C. Lew Yan, Yong Zhang, B. Lassen, M. Willatzen, Qihua Xiong, and P. C. Eklund. "Electronic Properties of Semiconductor Nanowires." Journal of Nanoscience and Nanotechnology 8, no. 1 (January 1, 2008): 1–26. http://dx.doi.org/10.1166/jnn.2008.n03.

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This paper provides a review of the state-of-the-art electronic-structure calculations of semiconductor nanowires. Results obtained using empirical k · p, empirical tight-binding, semi-empirical pseudopotential, and with ab initio methods are compared. For conciseness, we will restrict our detailed discussions to free-standing plain and modulated nanowires. Connections to relevant experimental data, particularly band gaps and polarization anisotropy, will be made since these results depend crucially on the electronic properties. For completeness, a brief review on the synthesis of nanowires is included.
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35

Gould, Paula. "Semiconductor friction undergoes electronic control." Materials Today 9, no. 9 (September 2006): 15. http://dx.doi.org/10.1016/s1369-7021(06)71614-5.

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36

Woodall, Jerry. "Electronic properties of semiconductor interfaces." Proceedings, annual meeting, Electron Microscopy Society of America 45 (August 1987): 334–37. http://dx.doi.org/10.1017/s0424820100126470.

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Over the past decade III-V materials have been successfully commercialized for optoelectronic applications requiring LED's lasers and photodetectors. The success of these materials for these applications is based primarily on the use of heterojunction structures formed by epitaxial techniques in a manufacturing environment. More recently, III-V materials, notably GaAs, have been studied in the R&D environment as possible materials for use in high speed devices and circuits including VLSI. Even though the use of epitaxially grown structures has played a significant role in the success of laboratory scale devices and circuits, there are still several technology problems which will need to be solved before affordable manufacturing can be done. Two important challenges facing the commercialization of these materials for this application are metal contacts, and dielectrics for control and passivation. Both of these challenges are rooted in a common problem. Stated simply, the problem is that at nearly all GaAs/metal or dielectric interfaces the Fermi level is pinned near mid-gap.
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37

Mönch, Winfried. "Metal-semiconductor contacts: electronic properties." Surface Science 299-300 (January 1994): 928–44. http://dx.doi.org/10.1016/0039-6028(94)90707-2.

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38

Kasera, Renu, and M. Z. Khan. "Semiconductor Devices and Electronic World." Journal of Pure Applied and Industrial Physics 9, no. 5 (May 30, 2019): 29–39. http://dx.doi.org/10.29055/jpaip/342.

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39

Chaabane, H., M. Zazoui, J. C. Bourgoin, and V. Donchev. "Electronic transport through semiconductor barriers." Semiconductor Science and Technology 8, no. 12 (December 1, 1993): 2077–84. http://dx.doi.org/10.1088/0268-1242/8/12/008.

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40

Himpsel, F. J. "Electronic structure of semiconductor surfaces." Applied Physics A Solids and Surfaces 38, no. 3 (November 1985): 205–12. http://dx.doi.org/10.1007/bf00616498.

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41

Herman, Frank. "Electronic structure of semiconductor interfaces." International Journal of Quantum Chemistry 28, S19 (June 19, 2009): 547–57. http://dx.doi.org/10.1002/qua.560280849.

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42

Hu, Xiaolong, Peter Krull, Bassel de Graff, Kevin Dowling, John A. Rogers, and William J. Arora. "Stretchable Inorganic-Semiconductor Electronic Systems." Advanced Materials 23, no. 26 (April 29, 2011): 2933–36. http://dx.doi.org/10.1002/adma.201100144.

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43

Sulaiman, Khaulah, Zubair Ahmad, Muhamad Saipul Fakir, Fadilah Abd Wahab, Shahino Mah Abdullah, and Zurianti Abdul Rahman. "Organic Semiconductors: Applications in Solar Photovoltaic and Sensor Devices." Materials Science Forum 737 (January 2013): 126–32. http://dx.doi.org/10.4028/www.scientific.net/msf.737.126.

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Organic semiconductor-based solar photovoltaic cells and sensors are scalable, printable, solution processable, bendable and light-weight. Furthermore, organic semiconductors require low energy fabrication process, hence can be fabricated at low cost as light-weight solar cells and sensors, coupled with the ease of processing, as well as compatibility, with flexible substrates. Organic semiconductors have been identified as a fascinating class of novel semiconductors that have the electrical and optical properties of metals and semiconductors. The continuous demand to improve the properties of organic semiconductors raises the quest for a deep understanding of fundamental issues and relevant electronic processes. Organic semiconductor thin film is sandwiched between two metal electrodes of indium tin oxide (ITO) and aluminum to form organic photovoltaic solar cell. Several types of organic semiconductors have been utilized as the photoactive layer in the solution processable organic solar cells. The performance of the fabricated solar cells can be improved by dissolving the material in the right choice of solvent, annealing of organic thin film, slowly forming the thin film and introducing an infra-red absorbance layer. Besides, organic semiconductor-based sensors can be fabricated utilizing either in a sandwidch type or planar type device. Some of these techniques and the experimental results are presented.
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44

TREW, R. J., and M. W. SHIN. "HIGH FREQUENCY, HIGH TEMPERATURE FIELD-EFFECT TRANSISTORS FABRICATED FROM WIDE BAND GAP SEMICONDUCTORS." International Journal of High Speed Electronics and Systems 06, no. 01 (March 1995): 211–36. http://dx.doi.org/10.1142/s0129156495000067.

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Electronic and optical devices fabricated from wide band gap semiconductors have many properties ideal for high temperature, high frequency, high power, and radiation hard applications. Progress in wide band gap semiconductor materials growth has been impressive and high quality epitaxial layers are becoming available. Useful devices, particularly those fabricated from SiC, are rapidly approaching the commercialization stage. In particular, MESFETs (MEtal Semiconductor Field-Effect Transistors) fabricated from wide band gap semiconductors have the potential to be useful in microwave power amplifier and oscillator applications. In this work the microwave performance of MESFETs fabricated from SiC, GaN and semiconducting diamond is investigated with a theoretical simulator and the results compared to experimental measurements. Excellent agreement between the simulated and measured data is obtained. It is demonstrated that microwave power amplifiers fabricated from these semiconductors offer superior performance, particularly at elevated temperatures compared to similar components fabricated from the commonly employed GaAs MESFETs.
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45

Masri, Pierre. "Quasicontinuum of metal electronic states and the electronic properties of semiconductor-metal-semiconductor heterostructures." Physical Review B 41, no. 14 (May 15, 1990): 10276–79. http://dx.doi.org/10.1103/physrevb.41.10276.

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46

Gunshor, Robert L., and Arto V. Nurmikko. "II-VI Blue-Green Laser Diodes: A Frontier of Materials Research." MRS Bulletin 20, no. 7 (July 1995): 15–19. http://dx.doi.org/10.1557/s088376940003712x.

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The current interest in the wide bandgap II-VI semiconductor compounds can be traced back to the initial developments in semiconductor optoelectronic device physics that occurred in the early 1960s. The II-VI semiconductors were the object of intense research in both industrial and university laboratories for many years. The motivation for their exploration was the expectation that, possessing direct bandgaps from infrared to ultraviolet, the wide bandgap II-VI compound semiconductors could be the basis for a variety of efficient light-emitting devices spanning the entire range of the visible spectrum.During the past thirty years or so, development of the narrower gap III-V compound semiconductors, such as gallium arsenide and related III-V alloys, has progressed quite rapidly. A striking example of the current maturity reached by the III-V semiconductor materials is the infrared semiconductor laser that provides the optical source for fiber communication links and compact-disk players. Despite the fact that the direct bandgap II-VI semiconductors offered the most promise for realizing diode lasers and efficient light-emitting-diode (LED) displays over the green and blue portions of the visible spectrum, major obstacles soon emerged with these materials, broadly defined in terms of the structural and electronic quality of the material. As a result of these persistent problems, by the late 1970s the II-VI semiconductors were largely relegated to academic research among a small community of workers, primarily in university research laboratories.
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47

Abdubannopov, M. I., and Х. T. Yuldashev. "OPTICAL AND ELECTRICAL PROPERTIES OF SEMICONDUCTOR CRYSTALS." International Journal of Advance Scientific Research 03, no. 04 (April 1, 2023): 83–89. http://dx.doi.org/10.37547/ijasr-03-04-12.

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Electronic elements are mainly made on the basis of semiconductor materials. Therefore, knowing the optical and photoelectric properties of electronic elements requires studying the structure of semiconductor materials, their differences from metals and dielectric materials, and the properties that are directly fundamental to semiconductor materials.
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48

Hasan, Md Nazmul, Edward Swinnich, and Jung-Hun Seo. "Recent Progress in Gallium Oxide and Diamond Based High Power and High-Frequency Electronics." International Journal of High Speed Electronics and Systems 28, no. 01n02 (March 2019): 1940004. http://dx.doi.org/10.1142/s0129156419400044.

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In recent years, the emergence of the ultrawide‐bandgap (UWBG) semiconductor materials that have an extremely large bandgap, exceeding 5eV including AlGaN/AlN, diamond, β-Ga2O3, and cubic BN, provides a new opportunity in myriad applications in electronic, optoelectronic and photonics with superior performance matrix than conventional WBG materials. In this review paper, we will focus on high power and high frequency devices based on two most promising UWBG semiconductors, β-Ga2O3 and diamond among various UWBG semiconductor devices. These two UWBG semiconductors have gained substantial attention in recent years due to breakthroughs in their growth technique as well as various device engineering efforts. Therefore, we will review recent advances in high power and high frequency devices based on β-Ga2O3 and diamond in terms of device performance metrics such as breakdown voltage, power gain, cut off frequency and maximum operating frequency.
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49

Cao, Zhen, Moussab Harb, Sergey M. Kozlov, and Luigi Cavallo. "Structural and Electronic Effects at the Interface between Transition Metal Dichalcogenide Monolayers (MoS2, WSe2, and Their Lateral Heterojunctions) and Liquid Water." International Journal of Molecular Sciences 23, no. 19 (October 7, 2022): 11926. http://dx.doi.org/10.3390/ijms231911926.

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Transition metal dichalcogenides (TMDCs) can be used as optical energy conversion materials to catalyze the water splitting reaction. A good catalytical performance requires: (i) well-matched semiconductor bandgaps and water redox potential for fluent energy transfer; and (ii) optimal orientation of the water molecules at the interface for kinetically fast chemical reactions. Interactions at the solid–liquid interface can have an important impact on these two factors; most theoretical studies have employed semiconductor-in-vacuum models. In this work, we explored the interface formed by liquid water and different types of TMDCs monolayers (MoS2, WSe2, and their lateral heterojunctions), using a combined molecular dynamics (MD) and density functional theory (DFT) approach. The strong interactions between water and these semiconductors confined the adsorbed water layer presenting structural patterns, with the water molecules well connected to the bulk water through the hydrogen bonding network. Structural fluctuations in the metal chalcogenide bonds during the MD simulations resulted in a 0.2 eV reduction of the band gap of the TMDCs. The results suggest that when designing new TMDC semiconductors, both the surface hydrophobicity and the variation of the bandgaps originating from the water-semiconductor interface, need to be considered.
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50

Fetahović, Irfan, Milić Pejović, and Miloš Vujisić. "Radiation Damage in Electronic Memory Devices." International Journal of Photoenergy 2013 (2013): 1–5. http://dx.doi.org/10.1155/2013/170269.

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This paper investigates the behavior of semiconductor memories exposed to radiation in order to establish their applicability in a radiation environment. The experimental procedure has been used to test radiation hardness of commercial semiconductor memories. Different types of memory chips have been exposed to indirect ionizing radiation by changing radiation dose intensity. The effect of direct ionizing radiation on semiconductor memory behavior has been analyzed by using Monte Carlo simulation method. Obtained results show that gamma radiation causes decrease in threshold voltage, being proportional to the absorbed dose of radiation. Monte Carlo simulations of radiation interaction with material proved to be significant and can be a good estimation tool in probing semiconductor memory behavior in radiation environment.
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