Relevant bibliographies by topics / Electronic semiconductor

Academic literature on the topic 'Electronic semiconductor'

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Published: 6 September 2023

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Journal articles on the topic "Electronic semiconductor"

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Choi, Junhwan, and Hocheon Yoo. "Combination of Polymer Gate Dielectric and Two-Dimensional Semiconductor for Emerging Field-Effect Transistors." Polymers 15, no. 6 (March 10, 2023): 1395. http://dx.doi.org/10.3390/polym15061395.

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Two-dimensional (2D) materials are considered attractive semiconducting layers for emerging field-effect transistors owing to their unique electronic and optoelectronic properties. Polymers have been utilized in combination with 2D semiconductors as gate dielectric layers in field-effect transistors (FETs). Despite their distinctive advantages, the applicability of polymer gate dielectric materials for 2D semiconductor FETs has rarely been discussed in a comprehensive manner. Therefore, this paper reviews recent progress relating to 2D semiconductor FETs based on a wide range of polymeric gate dielectric materials, including (1) solution-based polymer dielectrics, (2) vacuum-deposited polymer dielectrics, (3) ferroelectric polymers, and (4) ion gels. Exploiting appropriate materials and corresponding processes, polymer gate dielectrics have enhanced the performance of 2D semiconductor FETs and enabled the development of versatile device structures in energy-efficient ways. Furthermore, FET-based functional electronic devices, such as flash memory devices, photodetectors, ferroelectric memory devices, and flexible electronics, are highlighted in this review. This paper also outlines challenges and opportunities in order to help develop high-performance FETs based on 2D semiconductors and polymer gate dielectrics and realize their practical applications.
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Alivisatos, A. Paul. "Semiconductor Nanocrystals." MRS Bulletin 20, no. 8 (August 1995): 23–32. http://dx.doi.org/10.1557/s0883769400045073.

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The following is an edited transcript of the presentation given by A. Paul Alivisatos, recipient of the Outstanding Young Investigator Award, at the 1995 MRS Spring Meeting in San Francisco.The work I will describe on semiconductor nanocrystals started with the realization that it is possible to precipitate a semiconductor out of an organic liquid. We can precipitate out a semiconductor as a colloid—a very small-sized semiconductor with reduced dimensionality—that will show large, quantum size effects. A dream at that time was to make an electronic material by such a process in a liquid beaker, by starting with an organic fluid and somehow injecting something into the fluid to make very small particles, which we could use in electronics. The materials we use in electronics today have perfect crystalline order. We are able to put in dopants very specifically, or control precisely their arrangements in space in enormously complicated ways. The level of purity of electronic materials is so high that making an electronic material in a wet chemistry approach seems almost impossible. If, in addition, we specify that the size must be controlled precisely, we recognize the project is a problem for basic research, yet not one ready for applications. Many fundamental problems arise if we try to make semiconductor particles, in a liquid, of such high quality that they can be used as electronic materials.
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Chi, Zeyu, Jacob J. Asher, Michael R. Jennings, Ekaterine Chikoidze, and Amador Pérez-Tomás. "Ga2O3 and Related Ultra-Wide Bandgap Power Semiconductor Oxides: New Energy Electronics Solutions for CO2 Emission Mitigation." Materials 15, no. 3 (February 2, 2022): 1164. http://dx.doi.org/10.3390/ma15031164.

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Currently, a significant portion (~50%) of global warming emissions, such as CO2, are related to energy production and transportation. As most energy usage will be electrical (as well as transportation), the efficient management of electrical power is thus central to achieve the XXI century climatic goals. Ultra-wide bandgap (UWBG) semiconductors are at the very frontier of electronics for energy management or energy electronics. A new generation of UWBG semiconductors will open new territories for higher power rated power electronics and solar-blind deeper ultraviolet optoelectronics. Gallium oxide—Ga2O3 (4.5–4.9 eV), has recently emerged pushing the limits set by more conventional WBG (~3 eV) materials, such as SiC and GaN, as well as for transparent conducting oxides (TCO), such asIn2O3, ZnO and SnO2, to name a few. Indeed, Ga2O3 as the first oxide used as a semiconductor for power electronics, has sparked an interest in oxide semiconductors to be investigated (oxides represent the largest family of UWBG). Among these new power electronic materials, AlxGa1-xO3 may provide high-power heterostructure electronic and photonic devices at bandgaps far beyond all materials available today (~8 eV) or ZnGa2O4 (~5 eV), enabling spinel bipolar energy electronics for the first time ever. Here, we review the state-of-the-art and prospects of some ultra-wide bandgap oxide semiconductor arising technologies as promising innovative material solutions towards a sustainable zero emission society.
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Valentine, Nathan, Diganta Das, Bhanu Sood, and Michael Pecht. "Failure Analyses of Modern Power Semiconductor Switching Devices." International Symposium on Microelectronics 2015, no. 1 (October 1, 2015): 000690–95. http://dx.doi.org/10.4071/isom-2015-tha56.

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Power semiconductor switches such as Power Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) and Insulated Gate Bipolar Transistors (IGBTs) continue to be a leading cause of failure in power electronics systems. With the continued expansion of the power electronics market, reliable switching devices are of utmost importance in maintaining reliable operation of high power electronic systems. An overview of the failure mechanisms of power semiconductor switches identified by two failure analyses at CALCE is presented. The specific applications of power semiconducting switches have a wide range and include semiconductors found in converters for AC/DC power supplies and home appliance motor control board. All observed failures were from devices which experienced a short circuit between the collector and emitter terminals. The causes of the failures are hypothesized to be a combination of manufacturing defects and poor thermal management.
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SAPRA, SAMEER, RANJANI VISWANATHA, and D. D. SARMA. "ELECTRONIC STRUCTURE OF SEMICONDUCTOR NANOCRYSTALS: AN ACCURATE TIGHT-BINDING DESCRIPTION." International Journal of Nanoscience 04, no. 05n06 (October 2005): 893–99. http://dx.doi.org/10.1142/s0219581x05003851.

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We report a quantitatively accurate description of the electronic structure of semiconductor nanocrystals using the sp3d5 orbital basis with the nearest neighbor and the next nearest neighbor interactions. The use of this model for II–VI and III–V semiconductors is reviewed in article. The excellent agreement of the theoretical predictions with the experimental results establishes the feasibility of using this model for semiconductor nanocrystals.
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Nakayama, Yasuo, Ryohei Tsuruta, and Tomoyuki Koganezawa. "‘Molecular Beam Epitaxy’ on Organic Semiconductor Single Crystals: Characterization of Well-Defined Molecular Interfaces by Synchrotron Radiation X-ray Diffraction Techniques." Materials 15, no. 20 (October 13, 2022): 7119. http://dx.doi.org/10.3390/ma15207119.

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Epitaxial growth, often termed “epitaxy”, is one of the most essential techniques underpinning semiconductor electronics, because crystallinities of the materials seriously dominate operation efficiencies of the electronic devices such as power gain/consumption, response speed, heat loss, and so on. In contrast to already well-established epitaxial growth methodologies for inorganic (covalent or ionic) semiconductors, studies on inter-molecular (van der Waals) epitaxy for organic semiconductors is still in the initial stage. In the present review paper, we briefly summarize recent works on the epitaxial inter-molecular junctions built on organic semiconductor single-crystal surfaces, particularly on single crystals of pentacene and rubrene. Experimental methodologies applicable for the determination of crystal structures of such organic single-crystal-based molecular junctions are also illustrated.
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Klimm, Detlef. "Electronic materials with a wide band gap: recent developments." IUCrJ 1, no. 5 (August 29, 2014): 281–90. http://dx.doi.org/10.1107/s2052252514017229.

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The development of semiconductor electronics is reviewed briefly, beginning with the development of germanium devices (band gapEg= 0.66 eV) after World War II. A tendency towards alternative materials with wider band gaps quickly became apparent, starting with silicon (Eg= 1.12 eV). This improved the signal-to-noise ratio for classical electronic applications. Both semiconductors have a tetrahedral coordination, and by isoelectronic alternative replacement of Ge or Si with carbon or various anions and cations, other semiconductors with widerEgwere obtained. These are transparent to visible light and belong to the group of wide band gap semiconductors. Nowadays, some nitrides, especially GaN and AlN, are the most important materials for optical emission in the ultraviolet and blue regions. Oxide crystals, such as ZnO and β-Ga2O3, offer similarly good electronic properties but still suffer from significant difficulties in obtaining stable and technologically adequatep-type conductivity.
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Ngai, J. H., K. Ahmadi-Majlan, J. Moghadam, M. Chrysler, D. P. Kumah, C. H. Ahn, F. J. Walker, et al. "Electrically Coupling Multifunctional Oxides to Semiconductors: A Route to Novel Material Functionalities." MRS Advances 1, no. 4 (2016): 255–63. http://dx.doi.org/10.1557/adv.2016.101.

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ABSTRACTComplex oxides and semiconductors exhibit distinct yet complementary properties owing to their respective ionic and covalent natures. By electrically coupling oxides to semiconductors within epitaxial heterostructures, enhanced or novel functionalities beyond those of the constituent materials can potentially be realized. Key to electrically coupling oxides to semiconductors is controlling the physical and electronic structure of semiconductor – crystalline oxide heterostructures. Here we discuss how composition of the oxide can be manipulated to control physical and electronic structure in Ba1-xSrxTiO3/ Ge and SrZrxTi1-xO3/Ge heterostructures. In the case of the former we discuss how strain can be engineered through composition to enable the re-orientable ferroelectric polarization to be coupled to carriers in the semiconductor. In the case of the latter we discuss how composition can be exploited to control the band offset at the semiconductor - oxide interface. The ability to control the band offset, i.e. band-gap engineering, provides a pathway to electrically couple crystalline oxides to semiconductors to realize a host of functionalities.
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Brillson, Leonard, Jonathan Cox, Hantian Gao, Geoffrey Foster, William Ruane, Alexander Jarjour, Martin Allen, David Look, Holger von Wenckstern, and Marius Grundmann. "Native Point Defect Measurement and Manipulation in ZnO Nanostructures." Materials 12, no. 14 (July 12, 2019): 2242. http://dx.doi.org/10.3390/ma12142242.

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This review presents recent research advances in measuring native point defects in ZnO nanostructures, establishing how these defects affect nanoscale electronic properties, and developing new techniques to manipulate these defects to control nano- and micro- wire electronic properties. From spatially-resolved cathodoluminescence spectroscopy, we now know that electrically-active native point defects are present inside, as well as at the surfaces of, ZnO and other semiconductor nanostructures. These defects within nanowires and at their metal interfaces can dominate electrical contact properties, yet they are sensitive to manipulation by chemical interactions, energy beams, as well as applied electrical fields. Non-uniform defect distributions are common among semiconductors, and their effects are magnified in semiconductor nanostructures so that their electronic effects are significant. The ability to measure native point defects directly on a nanoscale and manipulate their spatial distributions by multiple techniques presents exciting possibilities for future ZnO nanoscale electronics.
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Su, Xiao-Qian, and Xue-Feng Wang. "Electronic and Spintronic Properties of Armchair MoSi2N4 Nanoribbons Doped by 3D Transition Metals." Nanomaterials 13, no. 4 (February 9, 2023): 676. http://dx.doi.org/10.3390/nano13040676.

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Structural and physical properties of armchair MoSi2N4 nanoribbons substitutionally doped by 3d transition metals (TM) at Mo sites are investigated using the density functional theory combined with the non-equilibrium Green’s function method. TM doping can convert the nonmagnetic direct semiconductor into device materials of a broad variety, including indirect semiconductors, half semiconductors, metals, and half metals. Furthermore the 100% spin filtering behavior in spin-up and spin-down half metals, a negative differential resistance with peak-to-valley ratio over 140 and a rectification effect with ratio over 130 are predicted, as well as semiconductor behavior with high spin polarization.
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Dissertations / Theses on the topic "Electronic semiconductor"

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Newson, D. J. "Electronic transport in III-V semiconductors and semiconductor devices." Thesis, University of Cambridge, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.382242.

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Tallarida, Massimo. "Electronic properties of semiconductor surfaces and metal, semiconductor interfaces." [S.l.] : [s.n.], 2005. http://www.diss.fu-berlin.de/2005/196/index.html.

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Wharam, David Andrew. "Electronic transport in semiconductor microstructures." Thesis, University of Cambridge, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.315922.

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Kelly, Leah L. "Electronic Structure and Dynamics at Organic Semiconductor / Inorganic Semiconductor Interfaces." Diss., The University of Arizona, 2015. http://hdl.handle.net/10150/566997.

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In this dissertation, I present the results of my research on a prototypical interface of the metal oxide ZnO and the organic semiconductor C₆₀. I establish that the physics at such oxide / organic interfaces is complex and very different from the extensively investigated case of organic semiconductor / metal interfaces. The studies presented in this dissertation were designed to address and improve the understanding of the fundamental physics at such hybrid organic / inorganic interfaces. Using photoemission spectroscopies, I show that metal oxide defect states play an important role in determining the interfacial electronic properties, such as energy level alignment and charge carrier dynamics. In particular, I show that for hybrid interfaces, electronic phenomena are sensitive to the surface electronic structure of the inorganic semiconductor. I also demonstrate applications of photoemission spectroscopies which are unique in that they allow for a direct comparison of ultrafast charge carrier dynamics at the interface and the electronic structure of defect levels. The research presented here focuses on a achieving a significant understanding of the realistic and device relevant C₆₀ / ZnO hybrid interface. I show how the complex surface structure of ZnO can be modified by simple experimental protocols, with direct and dramatic consequences on the interfacial energy level alignment, carrier dynamics and carrier collection and injection efficiencies. As a result of this careful study of the electronic structure and dynamics at the C₆₀ / ZnO interface, a greater understanding of the role of gap states in interface hybridization and charge carrier localization is obtained. This dissertation constitutes a first step in achieving a fundamental understanding of hybrid interfacial electronic properties.
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Richards, David Robert. "The electronic structure and optical properties of GaAs two-dimensional electron systems." Thesis, University of Cambridge, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.359697.

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Oliveira, Miguel Afonso Magano Hipolito De Jesus. "Electronic properties of layered semiconductor structures." Thesis, Imperial College London, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.406392.

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Charlesworth, Jason. "Electronic structure of metal-semiconductor interfaces." Thesis, University of Cambridge, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.239738.

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Peleckis, Germanas. "Studies on diluted oxide magnetic semiconductors for spin electronic applications." Access electronically, 2006. http://www.library.uow.edu.au/adt-NWU/public/adt-NWU20070821.145447/index.html.

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Brocke, Thomas. "Electronic Raman spectroscopy on semiconductor quantum dots." Göttingen Cuvillier, 2007.

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Marsh, A. C. "The electronic properties of semiconductor heterojunction systems." Thesis, University of Cambridge, 1985. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.372890.

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Books on the topic "Electronic semiconductor"

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Semiconductor and electronic devices. 3rd ed. New York: Prentice-Hall, 1993.

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L, Grung B., ed. Semiconductor-device electronics. Philadelphia: Holt, Rinehart and Winston, 1991.

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L, Grung B., ed. Semiconductor-device electronics. Philadelphia: Holt, Rinehart, and Winston, 1991.

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Semiconductor power electronics. New York: Van Nostrand Reinhold, 1986.

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1946-, Margaritondo Giorgio, ed. Electronic structure of semiconductor heterojunctions. Milano [Italy]: Jaca Book, 1988.

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Margaritondo, Giorgio, ed. Electronic Structure of Semiconductor Heterojunctions. Dordrecht: Springer Netherlands, 1988. http://dx.doi.org/10.1007/978-94-009-3073-5.

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Mönch, Winfried. Electronic Properties of Semiconductor Interfaces. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-06945-5.

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Borris, John P. Semiconductor devices using Electronic Workbench. Englewood Cliffs, N.J: Prentice Hall, 1996.

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Semiconductor devices for electronic tuners. New York: Gordon and Breach, 1991.

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Winfried, Mönch, ed. Electronic structure of metal-semiconductor contacts. Dordrecht: Kluwer Academic, 1990.

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Book chapters on the topic "Electronic semiconductor"

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Tietze, Ulrich, Christoph Schenk, and Eberhard Gamm. "Semiconductor Memories." In Electronic Circuits, 689–721. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-78655-9_10.

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van de Roer, Theo G. "Semiconductor materials." In Microwave Electronic Devices, 61–94. Boston, MA: Springer US, 1994. http://dx.doi.org/10.1007/978-1-4615-2500-4_3.

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Lutz, Josef, Heinrich Schlangenotto, Uwe Scheuermann, and Rik De Doncker. "Power Electronic Systems." In Semiconductor Power Devices, 497–513. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-11125-9_14.

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Gift, Stephan J. G., and Brent Maundy. "Semiconductor Diode." In Electronic Circuit Design and Application, 1–40. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-46989-4_1.

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Gift, Stephan J. G., and Brent Maundy. "Semiconductor Diode." In Electronic Circuit Design and Application, 1–44. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-79375-3_1.

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Siu, Christopher. "Semiconductor Physics." In Electronic Devices, Circuits, and Applications, 35–39. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-80538-8_3.

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Patrick, Dale R., Stephen W. Fardo, Ray E. Richardson, and Vigyan (Vigs) Chandra. "Semiconductor Fundamentals." In Electronic Devices and Circuit Fundamentals, 1–37. New York: River Publishers, 2023. http://dx.doi.org/10.1201/9781003393139-1.

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Taudt, Christopher. "Introduction and Motivation." In Development and Characterization of a Dispersion-Encoded Method for Low-Coherence Interferometry, 1–3. Wiesbaden: Springer Fachmedien Wiesbaden, 2021. http://dx.doi.org/10.1007/978-3-658-35926-3_1.

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AbstractThe electronics industry with all its branches such as semiconductors, organic-electronics and the photovoltaics industry, is continuously growing in terms of its economic as well as its technological influence, [1]. This trend is fostered by the ongoing integration of various electronic functionalities in fields such as energy generation & distribution, transport & mobility as well as in consumer goods. Over three decades, electronic and semiconductor products as well as processes were driven by Moores law, [2].
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Bausière, Robert, Francis Labrique, and Guy Séguier. "Switching Power Semiconductor Devices." In Power Electronic Converters, 17–109. Berlin, Heidelberg: Springer Berlin Heidelberg, 1993. http://dx.doi.org/10.1007/978-3-642-52454-7_2.

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Powell, Richard F. "Semiconductor Diodes." In Testing Active and Passive Electronic Components, 83–101. Boca Raton: Routledge, 2022. http://dx.doi.org/10.1201/9780203737255-7.

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Conference papers on the topic "Electronic semiconductor"

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Dekorsy, T., A. M. T. Kim, H. Kurz, and K. Köhler. "Coupled Bloch-Phonon Oscillations in Superlattices." In International Conference on Ultrafast Phenomena. Washington, D.C.: Optica Publishing Group, 1996. http://dx.doi.org/10.1364/up.1996.wc.1.

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One of the most relevant phenomena determining the electronic and optoelectronic properties of semiconductors and semiconductor heterostructures is the interaction between charged carriers and lattice vibrations. Especially electron-LO-phonon interaction provides the dominant relaxation and scattering mechanism in polar compound semiconductors. A special class of material, the semiconductor superlattices, recently gained great attention due to the verification of the early prediction of Esaki and Tsu [1] to generate continuously tunable THz radiation from Bloch oscillation [2], where the Bloch oscillation frequency is solely determined by eFd/h (F is an applied electric field and d the superlattice period). Here we report on the first observation of Bloch oscillations in GaAs/Al0.3Ga0.7As superlattices with frequencies tuned in resonance with the LO phonon resonance of GaAs at 8.8 THz. These experiments give direct insight into the nature of electron-phonon interaction in semiconductors. In contrast to the assumption that electronic coherence is rapidly destroyed by electron-phonon interaction, we show that the electronic coherence retains and can be transferred to the lattice vibration due to the formation of coupled Bloch-phonon modes.
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Oleg, Martynov, Ogurtsov Alexander, and Sashov Alexander. "Semiconductor electronic parts testing efficiency." In 2013 11th East-West Design and Test Symposium (EWDTS). IEEE, 2013. http://dx.doi.org/10.1109/ewdts.2013.6673118.

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Collins, R. T., L. Vina, W. I. Wang, C. Mailhiot, and D. L. Smith. "Electronic Properties Of Quantum Wells In Perturbing Fields." In Semiconductor Conferences, edited by Gottfried H. Doehler and Joel N. Schulman. SPIE, 1987. http://dx.doi.org/10.1117/12.940814.

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Kalluri, Srinath, Antao Chen, Mehrdad Ziari, William H. Steier, Zhiyong Liang, Larry R. Dalton, Datong Chen, Bahram Jalali, and Harold R. Fetterman. "Vertical Integration of Polymer Electro-Optic Devices on Electronic Circuits." In Organic Thin Films for Photonic Applications. Washington, D.C.: Optica Publishing Group, 1995. http://dx.doi.org/10.1364/otfa.1995.wb.6.

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A major topic of research in the opto-electronics field over the last decade has been the integration of photonic devices with electronic circuits. The major hurdle here is the fabrication incompatibility of the different material systems required for electronics and photonics. Most integrated photonic devices with applications in fiber communications are fabricated from compound semiconductors (lasers, modulators, detectors) or from crystalline dielectrics (modulators). On the other hand Si electronics (or GaAs for high speed) are highly developed and available through semiconductor foundries. To integrate this well developed electronics technology with conventional photonics technology has required techniques like flip chip bonding, epitaxial liftoff, solder bump technology and other forms of hybrid integration.
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Zany, D. V., Y. O. Shi, F. F. So, S. R. Forrest, and W. H. Steier. "Crystalline organic semiconductor thin-film optical waveguides." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1990. http://dx.doi.org/10.1364/oam.1990.fd1.

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Recently, crystalline organic semiconductors have been of interest because of their excellent electronic and optical properties. One crystalline organic semiconductor, 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA), is of particular importance owing to its usefulness in optoelectronic integrated circuits based on PTCDA-inorganic semiconductor heterojunction structures.
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Onet, Raul, Marius Neag, Albert Fazakas, Paul Miresan, Gabriel Petrasuc, Iulian Sularea, Alessandro Battigelli, and Martin Hill. "A Home Electronic Laboratory for Each Student - A Potential Paradigm Shift in Teaching Electronics." In 2022 International Semiconductor Conference (CAS). IEEE, 2022. http://dx.doi.org/10.1109/cas56377.2022.9934592.

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Gaylord, T. K., E. N. Glytsis, and K. F. Brennan. "Guided electron waves in semiconductor quantum wells." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1989. http://dx.doi.org/10.1364/oam.1989.mb5.

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The quantum mechanical wave behavior of ballistic electrons allows them to be guided by a semiconductor quantum well. These structures act as optical slab waveguides for guiding directions normal to the confinement direction. The allowed modes in an asymmetric quantum well slab waveguide are described quantitatively. Electron waveguiding can occur for energies above one or both of the potential barriers. Due to dispersion, each electron waveguide mode has an upper-energy cutoff as well as a lower-energy cutoff. An example waveguide consisting of Ga0.85 Al0.15AS (substrate), GaAs (film), and Ga0.70 Al0.30AS (cover) is presented. For [100] GaAs layer thicknesses of from six through thirty-one monolayers this structure is a single-mode electron waveguide. These waveguides are potentially useful in high speed electronic circuitry and as a central component in future electron guided-wave integrated circuits.
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Bellucci, S. "Electronic transport properties in carbon nanotubes." In 2008 International Semiconductor Conference. IEEE, 2008. http://dx.doi.org/10.1109/smicnd.2008.4703318.

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Shimizu, Akira. "Quantum Non-Demolition Measurement of Photon Number using a Mesoscopic Electron Interferometer." In Quantum Optoelectronics. Washington, D.C.: Optica Publishing Group, 1993. http://dx.doi.org/10.1364/qo.1993.qwc.3.

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Quantum phenomena in low-dimensional electron systems have been attracting much attention of semiconductor physicists and engineers for the last few decades. However, most discussions concern either electron transport or responses to classical electromagnetic fields. On the other hand, non-classical effects of light are a subject of growing interest in quantum optics. In this case, however, electronic systems are usually limited to either atoms or effective media (which are phenomenologically described to induce photon-photon couplings). The purpose of this talk is to give a brief introduction to “fully-quantum optoelectronics,” in which electrons confined in low-dimensional semiconductors are assumed to interact with quantized electromagnetic fields.
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Grahn, H. T., H. J. Maris, J. Tauc, Z. Vardeny, and B. Abeles. "Ultrafast Electronic And Vibrational Effects In Amorphous Multilayers." In 1988 Semiconductor Symposium, edited by Robert R. Alfano. SPIE, 1988. http://dx.doi.org/10.1117/12.947211.

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Reports on the topic "Electronic semiconductor"

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Sarma, Sankar D. Ultrafast Electronic Processes in Semiconductor Nanostructures. Fort Belvoir, VA: Defense Technical Information Center, February 2000. http://dx.doi.org/10.21236/ada384374.

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Kastner, Marc A. Measurement of Single Electronic Charging of Semiconductor Nano-Crystals. Office of Scientific and Technical Information (OSTI), October 2014. http://dx.doi.org/10.2172/1229880.

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Goldman, Rachel S., and H. T. Johnson. Determining the Origins of Electronic States in Semiconductor Nanostructures. Office of Scientific and Technical Information (OSTI), December 2014. http://dx.doi.org/10.2172/1165419.

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Merlin, R. Studies of Phonons and Electronic Excitations in Semiconductor Heterostructures. Fort Belvoir, VA: Defense Technical Information Center, March 1992. http://dx.doi.org/10.21236/ada249406.

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Dongarra, Jack, and Stanimire Tomov. Predicting the Electronic Properties of 3D, Million-atom Semiconductor nanostructure Architectures. Office of Scientific and Technical Information (OSTI), March 2012. http://dx.doi.org/10.2172/1036499.

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Hall, Douglas C., Patrick J. Fay, Thomas H. Kosel, Bruce A. Bunker, and Russell D. Dupuis. Electronic Properties and Device Applications of III-V Compound Semiconductor Native Oxides. Fort Belvoir, VA: Defense Technical Information Center, March 2006. http://dx.doi.org/10.21236/ada449186.

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Rudin, Sergey, Gregory Garrett, and Vladimir Malinovsky. Coherent Optical Control of Electronic Excitations in Wide-Band-Gap Semiconductor Structures. Fort Belvoir, VA: Defense Technical Information Center, May 2015. http://dx.doi.org/10.21236/ada620146.

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Bandyopadhyay, Supriyo, Hadis Morkoc, Alison Baski, and Shiv Khanna. Self Assembled Semiconductor Quantum Dots for Spin Based All Optical and Electronic Quantum Computing. Fort Belvoir, VA: Defense Technical Information Center, April 2008. http://dx.doi.org/10.21236/ada483818.

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Tully, John C. The Role of Electronic Excitations on Chemical Reaction Dynamics at Metal, Semiconductor and Nanoparticle Surfaces. Office of Scientific and Technical Information (OSTI), June 2017. http://dx.doi.org/10.2172/1362289.

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Hamad, Kimberly Sue. X-ray and photoelectron spectroscopy of the structure, reactivity, and electronic structure of semiconductor nanocrystals. Office of Scientific and Technical Information (OSTI), January 2000. http://dx.doi.org/10.2172/776734.

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